JPH10294290A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH10294290A JPH10294290A JP10119097A JP10119097A JPH10294290A JP H10294290 A JPH10294290 A JP H10294290A JP 10119097 A JP10119097 A JP 10119097A JP 10119097 A JP10119097 A JP 10119097A JP H10294290 A JPH10294290 A JP H10294290A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- insulating film
- etching
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10119097A JPH10294290A (ja) | 1997-04-18 | 1997-04-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10119097A JPH10294290A (ja) | 1997-04-18 | 1997-04-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10294290A true JPH10294290A (ja) | 1998-11-04 |
| JPH10294290A5 JPH10294290A5 (enExample) | 2004-10-07 |
Family
ID=14294049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10119097A Pending JPH10294290A (ja) | 1997-04-18 | 1997-04-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10294290A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447256B1 (ko) * | 2002-06-29 | 2004-09-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| KR100646984B1 (ko) * | 2000-06-30 | 2006-11-17 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 전극 형성 방법 |
| US7732272B2 (en) | 2002-11-19 | 2010-06-08 | Oki Semiconductor Co., Ltd. | Method of manufacturing semiconductor element |
-
1997
- 1997-04-18 JP JP10119097A patent/JPH10294290A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100646984B1 (ko) * | 2000-06-30 | 2006-11-17 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 전극 형성 방법 |
| KR100447256B1 (ko) * | 2002-06-29 | 2004-09-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US7732272B2 (en) | 2002-11-19 | 2010-06-08 | Oki Semiconductor Co., Ltd. | Method of manufacturing semiconductor element |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050415 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20070612 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A02 | Decision of refusal |
Effective date: 20071016 Free format text: JAPANESE INTERMEDIATE CODE: A02 |