JPH10284377A - 露光方法及び該方法を用いたデバイスの製造方法 - Google Patents

露光方法及び該方法を用いたデバイスの製造方法

Info

Publication number
JPH10284377A
JPH10284377A JP9087873A JP8787397A JPH10284377A JP H10284377 A JPH10284377 A JP H10284377A JP 9087873 A JP9087873 A JP 9087873A JP 8787397 A JP8787397 A JP 8787397A JP H10284377 A JPH10284377 A JP H10284377A
Authority
JP
Japan
Prior art keywords
pattern
exposure
reticle
image
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9087873A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10284377A5 (enExample
Inventor
Shigeru Hirukawa
茂 蛭川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP9087873A priority Critical patent/JPH10284377A/ja
Priority to US09/055,949 priority patent/US6265137B1/en
Priority to TW087105202A priority patent/TW368684B/zh
Publication of JPH10284377A publication Critical patent/JPH10284377A/ja
Publication of JPH10284377A5 publication Critical patent/JPH10284377A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP9087873A 1997-04-07 1997-04-07 露光方法及び該方法を用いたデバイスの製造方法 Pending JPH10284377A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9087873A JPH10284377A (ja) 1997-04-07 1997-04-07 露光方法及び該方法を用いたデバイスの製造方法
US09/055,949 US6265137B1 (en) 1997-04-07 1998-04-07 Exposure method and device producing method using the same
TW087105202A TW368684B (en) 1997-04-07 1998-04-07 Exposure method and manufacturing method of components using the exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9087873A JPH10284377A (ja) 1997-04-07 1997-04-07 露光方法及び該方法を用いたデバイスの製造方法

Publications (2)

Publication Number Publication Date
JPH10284377A true JPH10284377A (ja) 1998-10-23
JPH10284377A5 JPH10284377A5 (enExample) 2005-03-10

Family

ID=13926997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9087873A Pending JPH10284377A (ja) 1997-04-07 1997-04-07 露光方法及び該方法を用いたデバイスの製造方法

Country Status (3)

Country Link
US (1) US6265137B1 (enExample)
JP (1) JPH10284377A (enExample)
TW (1) TW368684B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084235A3 (en) * 2000-04-28 2002-10-31 Infineon Technologies Corp Multiple exposure process for formation of dense rectangular arrays
JP2008299332A (ja) * 2007-05-30 2008-12-11 Nikon Corp 露光方法、フラットパネルディスプレイ用基板の製造方法、及び露光装置
JP2011258842A (ja) * 2010-06-10 2011-12-22 Nikon Corp 荷電粒子線露光装置及びデバイス製造方法
JP2012178437A (ja) * 2011-02-25 2012-09-13 Canon Inc 描画装置、描画方法、および、物品の製造方法
KR20130088772A (ko) * 2012-01-31 2013-08-08 캐논 가부시끼가이샤 묘화 방법 및 물품의 제조 방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030087205A1 (en) * 2001-11-06 2003-05-08 Dennis Warner System and method for forming features on a semiconductor substrate
WO2004077163A2 (en) * 2003-02-26 2004-09-10 Koninklijke Philips Electronics N.V. Method for creating a pattern on a wafer using a single photomask
DE10344645B4 (de) * 2003-09-25 2008-08-07 Qimonda Ag Verfahren zur Durchführung einer Doppel- oder Mehrfachbelichtung
US20070218627A1 (en) * 2006-03-15 2007-09-20 Ludovic Lattard Device and a method and mask for forming a device
DE102006024741A1 (de) * 2006-05-26 2007-12-06 Qimonda Ag Verfahren zur Herstellung einer Vorrichtung, Masken zur Herstellung einer Vorrichtung und Vorrichtung
JP5264116B2 (ja) * 2007-07-26 2013-08-14 キヤノン株式会社 結像特性変動予測方法、露光装置、並びにデバイス製造方法
JP5326806B2 (ja) * 2009-05-21 2013-10-30 住友電気工業株式会社 半導体光素子を作製する方法
JP5684168B2 (ja) * 2012-02-15 2015-03-11 株式会社東芝 フレア計測方法、反射型マスクおよび露光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3094439B2 (ja) 1990-11-21 2000-10-03 株式会社ニコン 露光方法
JP3084760B2 (ja) 1991-02-28 2000-09-04 株式会社ニコン 露光方法及び露光装置
JP3084761B2 (ja) 1991-02-28 2000-09-04 株式会社ニコン 露光方法及びマスク
US5811222A (en) * 1996-06-24 1998-09-22 Advanced Micro Devices, Inc. Method of selectively exposing a material using a photosensitive layer and multiple image patterns

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084235A3 (en) * 2000-04-28 2002-10-31 Infineon Technologies Corp Multiple exposure process for formation of dense rectangular arrays
JP2008299332A (ja) * 2007-05-30 2008-12-11 Nikon Corp 露光方法、フラットパネルディスプレイ用基板の製造方法、及び露光装置
JP2013057963A (ja) * 2007-05-30 2013-03-28 Nikon Corp 露光方法及びフラットパネルディスプレイ用基板の製造方法
JP2011258842A (ja) * 2010-06-10 2011-12-22 Nikon Corp 荷電粒子線露光装置及びデバイス製造方法
JP2012178437A (ja) * 2011-02-25 2012-09-13 Canon Inc 描画装置、描画方法、および、物品の製造方法
KR20130088772A (ko) * 2012-01-31 2013-08-08 캐논 가부시끼가이샤 묘화 방법 및 물품의 제조 방법

Also Published As

Publication number Publication date
US6265137B1 (en) 2001-07-24
TW368684B (en) 1999-09-01

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