TW368684B - Exposure method and manufacturing method of components using the exposure method - Google Patents

Exposure method and manufacturing method of components using the exposure method

Info

Publication number
TW368684B
TW368684B TW087105202A TW87105202A TW368684B TW 368684 B TW368684 B TW 368684B TW 087105202 A TW087105202 A TW 087105202A TW 87105202 A TW87105202 A TW 87105202A TW 368684 B TW368684 B TW 368684B
Authority
TW
Taiwan
Prior art keywords
pattern
length
exposure
exposure method
manufacturing
Prior art date
Application number
TW087105202A
Other languages
English (en)
Chinese (zh)
Inventor
Shigeru Hirukawa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of TW368684B publication Critical patent/TW368684B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW087105202A 1997-04-07 1998-04-07 Exposure method and manufacturing method of components using the exposure method TW368684B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9087873A JPH10284377A (ja) 1997-04-07 1997-04-07 露光方法及び該方法を用いたデバイスの製造方法

Publications (1)

Publication Number Publication Date
TW368684B true TW368684B (en) 1999-09-01

Family

ID=13926997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105202A TW368684B (en) 1997-04-07 1998-04-07 Exposure method and manufacturing method of components using the exposure method

Country Status (3)

Country Link
US (1) US6265137B1 (enExample)
JP (1) JPH10284377A (enExample)
TW (1) TW368684B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511791B1 (en) * 2000-04-28 2003-01-28 International Business Machines Corporation Multiple exposure process for formation of dense rectangular arrays
US20030087205A1 (en) * 2001-11-06 2003-05-08 Dennis Warner System and method for forming features on a semiconductor substrate
WO2004077163A2 (en) * 2003-02-26 2004-09-10 Koninklijke Philips Electronics N.V. Method for creating a pattern on a wafer using a single photomask
DE10344645B4 (de) * 2003-09-25 2008-08-07 Qimonda Ag Verfahren zur Durchführung einer Doppel- oder Mehrfachbelichtung
US20070218627A1 (en) * 2006-03-15 2007-09-20 Ludovic Lattard Device and a method and mask for forming a device
DE102006024741A1 (de) * 2006-05-26 2007-12-06 Qimonda Ag Verfahren zur Herstellung einer Vorrichtung, Masken zur Herstellung einer Vorrichtung und Vorrichtung
US20080299499A1 (en) * 2007-05-30 2008-12-04 Naomasa Shiraishi Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus
JP5264116B2 (ja) * 2007-07-26 2013-08-14 キヤノン株式会社 結像特性変動予測方法、露光装置、並びにデバイス製造方法
JP5326806B2 (ja) * 2009-05-21 2013-10-30 住友電気工業株式会社 半導体光素子を作製する方法
JP5988537B2 (ja) * 2010-06-10 2016-09-07 株式会社ニコン 荷電粒子線露光装置及びデバイス製造方法
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP6087506B2 (ja) * 2012-01-31 2017-03-01 キヤノン株式会社 描画方法及び物品の製造方法
JP5684168B2 (ja) * 2012-02-15 2015-03-11 株式会社東芝 フレア計測方法、反射型マスクおよび露光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3094439B2 (ja) 1990-11-21 2000-10-03 株式会社ニコン 露光方法
JP3084760B2 (ja) 1991-02-28 2000-09-04 株式会社ニコン 露光方法及び露光装置
JP3084761B2 (ja) 1991-02-28 2000-09-04 株式会社ニコン 露光方法及びマスク
US5811222A (en) * 1996-06-24 1998-09-22 Advanced Micro Devices, Inc. Method of selectively exposing a material using a photosensitive layer and multiple image patterns

Also Published As

Publication number Publication date
US6265137B1 (en) 2001-07-24
JPH10284377A (ja) 1998-10-23

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