JPH10223532A5 - - Google Patents

Info

Publication number
JPH10223532A5
JPH10223532A5 JP1997041540A JP4154097A JPH10223532A5 JP H10223532 A5 JPH10223532 A5 JP H10223532A5 JP 1997041540 A JP1997041540 A JP 1997041540A JP 4154097 A JP4154097 A JP 4154097A JP H10223532 A5 JPH10223532 A5 JP H10223532A5
Authority
JP
Japan
Prior art keywords
temperature gradient
producing
metal element
crystalline semiconductor
amorphous film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1997041540A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10223532A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9041540A priority Critical patent/JPH10223532A/ja
Priority claimed from JP9041540A external-priority patent/JPH10223532A/ja
Priority to US09/021,639 priority patent/US6083801A/en
Publication of JPH10223532A publication Critical patent/JPH10223532A/ja
Priority to US09/596,755 priority patent/US6830616B1/en
Priority to US10/952,164 priority patent/US7300826B2/en
Publication of JPH10223532A5 publication Critical patent/JPH10223532A5/ja
Withdrawn legal-status Critical Current

Links

JP9041540A 1997-02-10 1997-02-10 半導体の作製方法及び半導体装置の作製方法 Withdrawn JPH10223532A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9041540A JPH10223532A (ja) 1997-02-10 1997-02-10 半導体の作製方法及び半導体装置の作製方法
US09/021,639 US6083801A (en) 1997-02-10 1998-02-10 Manufacturing method of semiconductor and manufacturing method of semiconductor device
US09/596,755 US6830616B1 (en) 1997-02-10 2000-06-15 Manufacturing method of semiconductor and manufacturing method of semiconductor device
US10/952,164 US7300826B2 (en) 1997-02-10 2004-09-29 Manufacturing method of semiconductor and manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9041540A JPH10223532A (ja) 1997-02-10 1997-02-10 半導体の作製方法及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH10223532A JPH10223532A (ja) 1998-08-21
JPH10223532A5 true JPH10223532A5 (cg-RX-API-DMAC7.html) 2005-01-06

Family

ID=12611261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9041540A Withdrawn JPH10223532A (ja) 1997-02-10 1997-02-10 半導体の作製方法及び半導体装置の作製方法

Country Status (2)

Country Link
US (1) US6083801A (cg-RX-API-DMAC7.html)
JP (1) JPH10223532A (cg-RX-API-DMAC7.html)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
US6291837B1 (en) * 1997-03-18 2001-09-18 Semiconductor Energy Laboratory Co., Ltd. Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US8138413B2 (en) 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7507903B2 (en) 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US6828950B2 (en) * 2000-08-10 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of driving the same
US7276724B2 (en) * 2005-01-20 2007-10-02 Nanosolar, Inc. Series interconnected optoelectronic device module assembly
US7838868B2 (en) * 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8247243B2 (en) * 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
JP2011124441A (ja) * 2009-12-11 2011-06-23 Utec:Kk 結晶化膜の製造方法及び結晶化装置
JP2014027252A (ja) * 2012-06-19 2014-02-06 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001047A (en) * 1975-05-19 1977-01-04 General Electric Company Temperature gradient zone melting utilizing infrared radiation
US5639698A (en) * 1993-02-15 1997-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JPH06349735A (ja) * 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US5663077A (en) * 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
JP2814049B2 (ja) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW264575B (cg-RX-API-DMAC7.html) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
TW273639B (en) * 1994-07-01 1996-04-01 Handotai Energy Kenkyusho Kk Method for producing semiconductor device
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3573811B2 (ja) * 1994-12-19 2004-10-06 株式会社半導体エネルギー研究所 線状レーザー光の照射方法

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