JPH10214998A5 - - Google Patents

Info

Publication number
JPH10214998A5
JPH10214998A5 JP1997018007A JP1800797A JPH10214998A5 JP H10214998 A5 JPH10214998 A5 JP H10214998A5 JP 1997018007 A JP1997018007 A JP 1997018007A JP 1800797 A JP1800797 A JP 1800797A JP H10214998 A5 JPH10214998 A5 JP H10214998A5
Authority
JP
Japan
Prior art keywords
nitride
compound semiconductor
based compound
contact layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997018007A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10214998A (ja
JP3824726B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP1800797A priority Critical patent/JP3824726B2/ja
Priority claimed from JP1800797A external-priority patent/JP3824726B2/ja
Publication of JPH10214998A publication Critical patent/JPH10214998A/ja
Publication of JPH10214998A5 publication Critical patent/JPH10214998A5/ja
Application granted granted Critical
Publication of JP3824726B2 publication Critical patent/JP3824726B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP1800797A 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法 Expired - Fee Related JP3824726B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1800797A JP3824726B2 (ja) 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1800797A JP3824726B2 (ja) 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法

Publications (3)

Publication Number Publication Date
JPH10214998A JPH10214998A (ja) 1998-08-11
JPH10214998A5 true JPH10214998A5 (enExample) 2004-11-18
JP3824726B2 JP3824726B2 (ja) 2006-09-20

Family

ID=11959633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1800797A Expired - Fee Related JP3824726B2 (ja) 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JP3824726B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105161583A (zh) * 2015-06-24 2015-12-16 广西盛和电子科技股份有限公司 氮化嫁基紫外半导体发光二极管及其制作方法

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