JP3824726B2 - 窒化物系化合物半導体装置とその製造方法 - Google Patents

窒化物系化合物半導体装置とその製造方法 Download PDF

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Publication number
JP3824726B2
JP3824726B2 JP1800797A JP1800797A JP3824726B2 JP 3824726 B2 JP3824726 B2 JP 3824726B2 JP 1800797 A JP1800797 A JP 1800797A JP 1800797 A JP1800797 A JP 1800797A JP 3824726 B2 JP3824726 B2 JP 3824726B2
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contact layer
compound semiconductor
nitride
semiconductor device
metal electrode
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Japanese (ja)
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JPH10214998A (ja
JPH10214998A5 (enExample
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信明 寺口
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Sharp Corp
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Sharp Corp
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JP1800797A 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法 Expired - Fee Related JP3824726B2 (ja)

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JP1800797A JP3824726B2 (ja) 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法

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JP1800797A JP3824726B2 (ja) 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法

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JPH10214998A JPH10214998A (ja) 1998-08-11
JPH10214998A5 JPH10214998A5 (enExample) 2004-11-18
JP3824726B2 true JP3824726B2 (ja) 2006-09-20

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JP1800797A Expired - Fee Related JP3824726B2 (ja) 1997-01-31 1997-01-31 窒化物系化合物半導体装置とその製造方法

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CN105161583A (zh) * 2015-06-24 2015-12-16 广西盛和电子科技股份有限公司 氮化嫁基紫外半导体发光二极管及其制作方法

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JPH10214998A (ja) 1998-08-11

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