US20140127848A1 - Nitride semiconductor light-emittting device and process for producing the same - Google Patents

Nitride semiconductor light-emittting device and process for producing the same Download PDF

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US20140127848A1
US20140127848A1 US14/152,980 US201414152980A US2014127848A1 US 20140127848 A1 US20140127848 A1 US 20140127848A1 US 201414152980 A US201414152980 A US 201414152980A US 2014127848 A1 US2014127848 A1 US 2014127848A1
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nitride semiconductor
semiconductor layer
process
set forth
substrate
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Dong Hyun Cho
Masayoshi Koike
Yuji Imai
Min Ho Kim
Bang Won Oh
Hun Joo Hahm
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority to KR20040021906A priority patent/KR100568300B1/en
Priority to US10/898,204 priority patent/US8664687B2/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to US14/152,980 priority patent/US20140127848A1/en
Publication of US20140127848A1 publication Critical patent/US20140127848A1/en
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/0008Reflectors for light sources providing for indirect lighting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00Lighting devices intended for fixed installation
    • F21S8/08Lighting devices intended for fixed installation with a standard
    • F21S8/085Lighting devices intended for fixed installation with a standard of high-built type, e.g. street light
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/60Cooling arrangements characterised by the use of a forced flow of gas, e.g. air
    • F21V29/67Cooling arrangements characterised by the use of a forced flow of gas, e.g. air characterised by the arrangement of fans
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02389Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647Lateral overgrowth
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21WINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/10Outdoor lighting
    • F21W2131/103Outdoor lighting of streets or roads

Abstract

Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a nitride semiconductor light-emitting device, and more particularly to a nitride semiconductor light-emitting device having an AlN polycrystalline or amorphous substrate and a process for producing the same.
  • 2. Description of the Related Art
  • Generally, a great deal of attention has been directed to nitride semiconductor crystals as a material for use in preparing visible and ultraviolet light LEDs and blue-green color optical devices such as light-emitting diodes or laser diodes, because they produce light with a broad spectrum including the entire visible light region and also the ultraviolet light region.
  • In order to prepare a high efficiency optical device with such nitride semiconductor crystals, there is essentially required a technique which enables a nitride semiconductor to grow into a high quality single crystal thin film. However, the III-A group nitride semiconductors are not suitable for general substrates due to their lattice constant and thermal expansion coefficient and thus have a difficulty in growing a single crystal thin film.
  • To grow nitride semiconductor crystals, a sapphire (Al2O3) or SiC substrate is limitedly employed only. For example, nitride semiconductor crystals may be grown on the sapphire substrate by heteroepitaxy methods using Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and the like.
  • But, despite use of such a nitride semiconductor single crystal substrate, it is difficult to directly grow a high quality nitride semiconductor single crystal on the substrate due to inconsistency of a lattice constant and a thermal expansion coefficient therebetween, and thus a low temperature nucleus-growth layer and a buffer layer are additionally used. FIG. 1 is a cross-sectional side view of a conventional nitride semiconductor light-emitting device.
  • As shown in FIG. 1, a conventional nitride semiconductor light-emitting device; which is designated by reference number 10, includes an n-type nitride semiconductor layer 15 formed on a sapphire substrate 11, an active layer 16 having a multi-well structure 16 and a p-type nitride semiconductor layer 17. An n-electrode 19 a was formed on a region of the exposed portion of the n-type nitride semiconductor layer 15 by removing and exposing some portions of the p-type nitride semiconductor layer 17 and the active layer 10. A transparent electrode 18 containing Ni and Au, and a p-electrode 19 b were formed on the p-type GaN semiconductor layer 17.
  • Further, a buffer layer was formed on the sapphire substrate in order to grow high quality nitride semiconductor crystals. As the buffer layer, a low temperature nucleus-growth layer such as AlxGa1-xN wherein x is between 0 and 1, is usually used.
  • However, even when a nitride semiconductor single crystal was grown on the sapphire substrate after forming the low temperature nucleus-growth layer, the nitride semiconductor single crystal had crystal defects of about 109 to about 1010 cm−2. In particular, these crystal defects propagate in the vertical direction and thus exhibit adverse effects responsible for leakage of electrical current.
  • On the other hand, the conventional sapphire or SiC substrate may have disadvantages of high cost, lower thermal conductivity, and lower mechanical properties, resulting in increased production costs and deterioration of device characteristics, as compared to an AlN polycrystalline or amorphous substrate. But, the AlN polycrystalline or amorphous substrate is not suitable for growth of the nitride single crystal layer and thus is not usually used as a substrate for the nitride semiconductor light-emitting device.
  • SUMMARY OF THE INVENTION
  • Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a nitride semiconductor light-emitting device comprising a high quality nitride semiconductor layer grown on an AlN polycrystalline or amorphous substrate by Lateral Epitaxial Overgrowth (LEO).
  • It is another object of the present invention to provide a process for producing a nitride semiconductor light-emitting device comprising the step of forming a high quality nitride semiconductor layer on an AlN polycrystalline or amorphous substrate by using LEO.
  • In accordance with the present invention, the above and other objects can be accomplished by the provision of a nitride semiconductor light-emitting device comprising:
  • a polycrystalline or amorphous substrate made of AlN;
  • a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure;
  • a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth (LEO);
  • a first conductive nitride semiconductor layer formed on the nitride semiconductor layer;
  • an active layer formed on the first conductive nitride semiconductor layer; and
  • a second conductive nitride semiconductor layer formed on the active layer.
  • Preferably, the AlN substrate has an upper surface having irregularities formed to face in a predetermined direction.
  • The nitride semiconductor light-emitting device may further include a buffer layer formed on the AlN substrate. Preferably, the buffer layer may be a low temperature nucleus-growth layer made of a material having the formula of AlxGa1-xN wherein x is between 0 and 1.
  • Preferably, the buffer layer has an upper surface having irregularities formed in a predetermined face direction.
  • Dielectric patterns used in the present invention may be made of SiO2 or SiN. The lateral epitaxially overgrown-nitride semiconductor layer may be formed of the nitride semiconductor layer containing first conductive impurities and then may be provided as a clad layer having the same conductivity-type as that of the first conductive nitride semiconductor layer.
  • The first conductive nitride semiconductor layer may be a p-type nitride semiconductor layer. The second conductive nitride semiconductor layer may be an n-type nitride semiconductor layer. In this case, an n-type nitride semiconductor layer with a relatively low electrical resistance is used as a capping layer and thus a transparent electrode layer for ohmic contact may be eliminated.
  • Further, the present invention provides a process for producing a novel nitride semiconductor light-emitting device.
  • The above-mentioned process comprises the steps of:
  • providing a polycrystalline or amorphous substrate made of AlN;
  • forming a plurality of dielectric patterns having a stripe or lattice structure on the AlN substrate;
  • forming a lateral epitaxially overgrown-nitride semiconductor layer on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth (LEO);
  • forming a first conductive nitride semiconductor layer on the nitride semiconductor layer;
  • forming an active layer on the first conductive nitride semiconductor layer; and
  • forming a second conductive nitride semiconductor layer on the active layer.
  • Preferably, the process may further comprise the step of etching the upper surface of the AlN substrate such that irregularities are formed on the AlN substrate in a predetermined face direction. The etching step may include a step of applying wet etching to the AlN substrate using an etching solution containing NaOH.
  • The process may further comprise the step of forming a buffer layer on the AlN substrate, prior to forming the dielectric patterns. Preferably, the buffer layer may be a low temperature nucleus-growth layer made of a material having the formula of AlxGa1-xN wherein x is between 0 and 1. In accordance with the present invention, the process may further comprise the step of etching the upper surface of the buffer layer such that irregularities are formed on the buffer layer in a predetermined face direction.
  • Further, the dielectric patterns may be made of SiO2 or SiN. The lateral epitaxially overgrown-nitride semiconductor layer may be a nitride semiconductor layer containing first conductive impurities. The first conductive nitride semiconductor layer may be a p-type nitride semiconductor layer. The second conductive nitride semiconductor layer may be an n-type nitride semiconductor layer.
  • Where the lateral epitaxially overgrown-nitride semiconductor layer is a nitride semiconductor layer containing Al, the step of forming the lateral epitaxially overgrown-nitride semiconductor layer may comprise the step of forming the lateral epitaxially overgrown-nitride semiconductor layer by LEO while injecting Cl- or Br-based gas. As the Br- or Cl-based gas, a gas containing at least one selected from the group consisting of Br2, Cl2, CBr4, CCl4, HBr and HCl may be used.
  • The present invention provides a new type of nitride semiconductor device by forming a nitride semiconductor layer on AlN polycrystalline or amorphous substrate in place of a conventional sapphire or SiC substrate. That is, a high quality nitride semiconductor layer may be grown by Lateral Epitaxial Overgrowth using dielectric patterns having a stripe or lattice structure. More preferably, a higher quality nitride semiconductor layer may be grown by applying a given etching solution such as NaOH to the AlN polycrystalline or amorphous substrate to form irregularities facing a desired direction.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 is a cross-sectional side view of a conventional nitride semiconductor light-emitting device;
  • FIG. 2 is a cross-sectional side view of a nitride semiconductor light-emitting device according to one embodiment of the present invention; and
  • FIGS. 3 a-3 f are a flow chart illustrating a process for producing a nitride semiconductor light-emitting device according to another embodiment of the present invention.
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Now, the present invention will be described in detail with reference to the attached drawings. FIG. 2 is a cross-sectional side view of a nitride semiconductor light-emitting device according to one embodiment of the present invention.
  • A nitride semiconductor light-emitting device 20 includes an AlN polycrystalline substrate 21. The AlN substrate 21 may comprise Ga and/or In, resulting in (GaIn)AlN. The AlN polycrystalline substrate 21 was provided with a plurality of dielectric patterns 23 having a stripe or lattice structure which were arranged side by side. The AlN polycrystalline substrate 21 having the dielectric patterns formed thereon was provided with a lateral epitaxially overgrown-nitride semiconductor layer 24 grown by Lateral Epitaxial Overgrowth (LEO). On the nitride semiconductor layer 24 were sequentially formed an n-type nitride semiconductor layer 25, an active layer 26 having a multiple-well structure and a p-type nitride semiconductor layer 27.
  • Further, a transparent electrode layer 28 such as Ni/Au was formed on the p-type nitride semiconductor layer 27 in order to decrease contact resistance. Each of p- and n-electrodes 29 b and 29 a was provided on the transparent electrode layer 28 and the n-type nitride semiconductor layer 25.
  • The lateral epitaxially overgrown-nitride semiconductor layer 24 formed on the AlN polycrystalline substrate 21 was formed by LEO using dielectric patterns 23 having a stripe or lattice structure. Therefore, since crystals grow onto the dielectric patterns 23 in the lateral direction, defects progressing in the vertical direction, i.e. the potentials occurring between the interface of heterologous materials may be greatly reduced, unlike a conventional growth method. Therefore, by decreasing potentials which propagate to an active layer, leakage of electric current due to the crystal defects may be significantly reduced. These dielectric patterns may be made of SiO2 or SiN.
  • The lateral epitaxially overgrown-nitride semiconductor layer 24 used in the present invention may be formed of an undoped nitride semiconductor layer. Alternatively, the layer 24 may also be formed of a nitride semiconductor layer having the same conductivity-type as that of the nitride semiconductor layer 25 formed on the upper part thereof.
  • For example, in this embodiment, the n-type lateral epitaxially overgrown-nitride semiconductor layer 24 may be formed by injecting n-type impurities to cause lateral epitaxial overgrowth, and may constitute an n-clad layer in integrated form with the n-type nitride semiconductor layer 25 formed on the upper part thereof.
  • Further, unlike this embodiment, a structure having a p-type nitride semiconductor layer disposed between an AlN polycrystalline substrate and an active layer, and the n-type nitride semiconductor layer disposed on the upper part of the active layer may be also provided. In this case, the n-type nitride semiconductor layer has a relatively low electrical resistance compared to the p-type nitride semiconductor layer.
  • Thus, a transparent electrode structure 28 formed on the upper part of the p-type nitride semiconductor layer 27 as shown in FIG. 2 may be eliminated.
  • FIGS. 3 a-3 f are a flow chart illustrating a process for producing a nitride semiconductor light-emitting device according to another embodiment of the present invention.
  • First, as shown in FIG. 3 a, an AlN polycrystalline substrate 31 was prepared. That is, the present invention does not use a sapphire substrate but instead uses an AlN polycrystalline substrate 31 having a relatively high thermal conductivity and excellent mechanical properties.
  • As can be seen from FIG. 3 a, it is preferable to additionally etch the upper surface of the AlN polycrystalline substrate 31 so as to form irregularities 31 a having a desired crystal face. Generally, etching rate varies depending on a direction of the crystal face, and then each irregularity 31 a may have a main face direction in a certain face direction by applying wet etching using an etching solution such as NaOH, or the like. The main face direction of the irregularities 31 a may provide more advantageous growth face conditions for forming a nitride single crystal layer in a subsequent process. For instance, suitably shaped irregularities may be obtained by applying a NaOH etching solution to the AlN polycrystalline substrate 31 at a temperature of about 60° C. for 10 minutes.
  • Then, as shown in FIG. 3 b, a buffer layer 32 may be provided on the AlN polycrystalline substrate 31. In accordance with the present invention, the buffer layer 32 may be optionally provided to obtain superior nitride crystals. As the buffer layer 32, a material satisfying a composition formula of AlxGa1-xN wherein x is between 0 and 1, may be provided. For instance, a low temperature nucleus-growth layer made of AlN, GaN, AlGaN, or the like may be used. In this step, an etching process may be additionally carried out so as to form irregularities having a desired crystal face on the buffer layer 32. As described in the etching process for the AlN polycrystalline substrate, this is designed to provide advantageous growth conditions for the nitride single crystal layer in a subsequent process by forming irregularities having a certain crystal face direction in the main face direction. The etching process for forming irregularities need not be carried out on the AlN polycrystalline substrate 31, but may instead be carried out only in this step or may be carried out in both of them.
  • Next, as shown in FIG. 3 c, a plurality of dielectric patterns 33 having a stripe or lattice structure were formed on the buffer layer 32. The dielectric patterns 33 may be obtained by vapor-depositing dielectric materials such as SiO2 and Si3N4 on the entire upper surface of the buffer layer 32, and then selectively removing the deposited portion thereof so as to form stripe patterns (or lattice patterns) by using a photolithography process. Alternatively, where the buffer layer 32 is not present, the dielectric patterns 33 may be provided directly on the upper surface of the AlN polycrystalline substrate 31.
  • Thereafter, as shown in FIG. 3 d, the nitride semiconductor crystals 34 were grown by LEO using dielectric patterns 33 having a stripe or lattice structure. This growth process may use conventional processes such as MOCVD, MBE, and the like. In the lateral epitaxial overgrowing process of this step, a lateral epitaxially overgrown-nitride layer 34 may be obtained in which nitride single crystals firstly grow on a region of the buffer layer 32 exposed between the dielectric patterns 33, a growth thickness thereof reaches the height of the dielectric patterns 33, lateral epitaxial overgrowth progresses over the dielectric patterns 33, and finally covers the dielectric patterns 33. Where the lateral epitaxially grown-nitride semiconductor layer 34 is a nitride single crystal containing Al such as AlGaN, it is difficult to grow high quality nitride crystals because Al has high reactivity with the dielectric patterns 33 such as SiO2 or Si3N4 and adatoms have low surface mobility, thereby growing even on dielectric materials. Thus, in this case, it is preferable to form the lateral epitaxially overgrown-nitride semiconductor layer 34 while injecting Cl- or Br-based gas. As the Br- or Cl-based gas, it is preferable to use gas containing at least one selected from the group consisting of Br2, Cl2, CBr4, CCl4, HBr and HCl.
  • Then, as shown in FIG. 3 e, a p-type nitride semiconductor layer 35, an active layer 36 and an n-type nitride semiconductor layer 37 were grown on the lateral epitaxially overgrown-nitride semiconductor layer 34. This growth process may be continuously carried out together with the lateral epitaxially overgrown-nitride semiconductor layer 34. For instance, the nitride semiconductor layers 35, 36 and 37 may be continuously grown in combination with the lateral epitaxially overgrown-nitride semiconductor layer 34 as described in FIG. 3 d, under the condition in which they are placed in an MOCVD chamber. In this case, the lateral epitaxially overgrown-nitride semiconductor layer 34 described in FIG. 3 d may be formed of an undoped region. Alternatively, it may be formed of a layer containing p-type impurities, as in the case of the p-type nitride semiconductor layer 35 and may be provided as a clad layer integrated with the p-type nitride semiconductor layer 35 on one side.
  • Finally, the n-type nitride semiconductor layer 37 and the active layer 36 were mesa etched to expose a portion thereof, a first electrode 39 a was formed on a region of the exposed p-type nitride semiconductor layer 35, and then an n- type electrode 39 b such as Ni/Au was formed on the upper surface of the n-type nitride semiconductor layer 37.
  • Alternatively, still another embodiment may be implemented by first forming a p-type nitride semiconductor layer on an AlN polycrystalline substrate, forming an active layer on the p-type nitride semiconductor layer, and then forming an n-type nitride semiconductor layer on the active layer.
  • As apparent from the above description, the present invention provides an inexpensive nitride semiconductor light-emitting device having superior characteristics, by forming a high quality nitride semiconductor layer on the substrate by LEO using an AlN polycrystalline or amorphous substrate having superior thermal conductivity and mechanical properties.
  • Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims (14)

1-9. (canceled)
10. A process for producing a nitride semiconductor light-emitting device, comprising the steps of:
providing a polycrystalline or amorphous substrate made of AlN;
forming a plurality of dielectric patterns having a stripe or lattice structure on the AlN substrate;
forming a lateral epitaxially overgrown-nitride semiconductor layer on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth;
forming a first conductive nitride semiconductor layer on the nitride semiconductor layer;
forming an active layer on the first conductive nitride semiconductor layer; and
forming a second conductive nitride semiconductor layer on the active layer.
11. The process as set forth in claim 10, wherein the substrate comprises (GaIn)AlN substrate.
12. The process as set forth in claim 10, wherein the AlN substrate is a polycrystalline substrate, and the process further comprises the step of etching the upper surface of the AlN substrate such that irregularities having a predetermined face direction are formed on the AlN polycrystalline substrate.
13. The process as set forth in claim 10, wherein the etching step is a step of applying wet etching to the AlN substrate using an etching solution containing NaOH.
14. The process as set forth in claim 10, further comprising:
forming a buffer layer on the AlN substrate, prior to forming the dielectric patterns.
15. The process as set forth in claim 14, wherein the buffer layer is a low temperature nucleus-growth layer made of a material having a formula of AlxGa1-xN wherein x is between 0 and 1.
16. The process as set forth in claim 12, wherein the process further comprises the step of etching the upper surface of the buffer layer such that irregularities having a predetermined face direction are formed thereon.
17. The process as set forth in claim 16, wherein the etching step is a step of applying wet etching to the buffer layer using an etching solution containing NaOH.
18. The process as set forth in claim 10, wherein the dielectric patterns are made of SiO2 or SiN.
19. The process as set forth in claim 10, wherein the lateral epitaxially overgrown-nitride semiconductor layer is a nitride semiconductor layer containing first conductive impurities.
20. The process as set forth in claim 10, wherein the first conductive nitride semiconductor layer is an n-type nitride semiconductor layer, and the second conductive nitride semiconductor layer is a p-type nitride semiconductor layer.
21. The process as set forth in claim 10, wherein the lateral epitaxially overgrown-nitride semiconductor layer is a nitride semiconductor layer containing Al, and the step of forming the lateral epitaxially overgrown-nitride semiconductor layer is a step of forming the lateral epitaxially overgrown-nitride semiconductor layer using Lateral Epitaxial Overgrowth while injecting Cl- or Br-based gas.
22. The process as set forth in claim 20, wherein the Br- or Cl-based gas is gas containing at least one selected from the group consisting of Br2, Cl2, CBr4, CCl4, HBr and HCl.
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KR100664988B1 (en) 2004-11-04 2007-01-09 삼성전기주식회사 Light extraction efficiency-improved semiconductor light emitting device
KR100624449B1 (en) 2004-12-08 2006-09-18 삼성전기주식회사 Semiconductor emitting device with approved and manufacturing method for the same
US20070145386A1 (en) 2004-12-08 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
JP5192239B2 (en) * 2005-02-04 2013-05-08 ソウル オプト デバイス カンパニー リミテッド Light emitting device having a plurality of light emitting cells and method for manufacturing the same
KR100669142B1 (en) * 2005-04-20 2007-01-15 (주)더리즈 Light emitting element and method for manufacturing thereof
KR100715011B1 (en) * 2005-12-15 2007-05-09 서울옵토디바이스주식회사 Luminous element with buffer layer formed and method for manufacturing the same
KR100659373B1 (en) 2006-02-09 2006-12-19 서울옵토디바이스주식회사 Patterned substrate for light emitting diode and light emitting diode employing the same
KR20070081184A (en) 2006-02-10 2007-08-16 삼성전기주식회사 Nitride-based semiconductor light emitting device and method of manufacturing the same
KR100887067B1 (en) * 2006-02-14 2009-03-04 삼성전기주식회사 Manufacturing Method for Semiconductor Emitting Device with nano pattern structure
KR100820836B1 (en) * 2006-09-12 2008-04-11 엘지이노텍 주식회사 Method for manufacturing light emitting diode
DE102006043400A1 (en) * 2006-09-15 2008-03-27 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
KR100836455B1 (en) * 2007-01-11 2008-06-09 엘지이노텍 주식회사 Semiconductor light emitting device and manufacturing method of semiconductor light emitting device
KR100893188B1 (en) * 2007-03-13 2009-04-16 삼성전기주식회사 Nitride semiconductor light emitting device and fabrication method thereof
KR100892664B1 (en) * 2007-06-29 2009-04-15 서울옵토디바이스주식회사 Vertical light emitting diode, method for manufacturing the same and light emitting diode having the same
KR100974048B1 (en) * 2008-02-19 2010-08-04 우리엘에스티 주식회사 Compound semiconductor light emitting device with hybrid buffer layer and method for fabricating the same
KR100988146B1 (en) 2008-07-16 2010-10-18 주식회사 실트론 Compound semiconductor substrate, method for manufacturing the same, and compound semiconductor device using the same
KR20100030472A (en) 2008-09-10 2010-03-18 삼성전자주식회사 Fabricating method of light emitting element and device, fabricated light emitting element and device using the same
JPWO2010100942A1 (en) * 2009-03-05 2012-09-06 株式会社小糸製作所 Light emitting module, method for manufacturing light emitting module, and lamp unit
KR101125397B1 (en) * 2009-10-20 2012-04-02 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR101007087B1 (en) 2009-10-26 2011-01-10 엘지이노텍 주식회사 Light emitting device and fabrication method thereof
JP5585830B2 (en) * 2010-08-24 2014-09-10 スタンレー電気株式会社 Vehicle lighting
CN103003920B (en) * 2010-09-27 2016-09-14 株式会社东芝 GaN base semiconductor junction polycrystalline growing polycrystalline aluminum nitride base material and use the GaN base method for making semiconductor of this base material
TWI480926B (en) * 2010-09-28 2015-04-11 Nat Univ Chung Hsing Preparation method of epitaxial element
US8766274B2 (en) 2010-12-14 2014-07-01 Hexatech, Inc. Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies
CN102610717B (en) * 2011-01-20 2015-02-25 赛恩倍吉科技顾问(深圳)有限公司 Semiconductor lighting chip and manufacturing method thereof
KR101855063B1 (en) * 2011-06-24 2018-05-04 엘지이노텍 주식회사 Light emitting device
KR101407698B1 (en) * 2012-12-28 2014-06-16 한국광기술원 Nitride semiconductor device and method for manufacturing thereof
CN103545412A (en) * 2013-10-30 2014-01-29 华南理工大学 LED pattern optimized substrate with mixed patterns and LED chip
KR20160139919A (en) 2015-05-29 2016-12-07 엘지이노텍 주식회사 Light emitting device, light emitting device manufacturing method and lighting system having the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020066403A1 (en) * 1997-03-13 2002-06-06 Nec Corporation Method for manufacturing group III-V compound semiconductors

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3142312B2 (en) * 1991-07-30 2001-03-07 株式会社東芝 Crystal growth method for hexagonal semiconductor
JP3761935B2 (en) 1994-09-19 2006-03-29 株式会社東芝 Compound semiconductor device
JP3410863B2 (en) 1995-07-12 2003-05-26 株式会社東芝 Compound semiconductor device and compound semiconductor light emitting device
JPH0936427A (en) 1995-07-18 1997-02-07 Showa Denko Kk Semiconductor device and fabrication thereof
JP3898798B2 (en) * 1997-05-27 2007-03-28 シャープ株式会社 Method for manufacturing gallium nitride compound semiconductor light emitting device
US6091083A (en) * 1997-06-02 2000-07-18 Sharp Kabushiki Kaisha Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface
JP4032538B2 (en) * 1998-11-26 2008-01-16 ソニー株式会社 Semiconductor thin film and semiconductor device manufacturing method
JP3889910B2 (en) 2000-03-10 2007-03-07 三菱化学株式会社 Semiconductor light emitting device and manufacturing method thereof
JP3889911B2 (en) 2000-03-10 2007-03-07 三菱化学株式会社 Semiconductor light emitting device and manufacturing method thereof
JP3384782B2 (en) * 2000-03-16 2003-03-10 三洋電機株式会社 Nitride-based semiconductor device and method of manufacturing the same
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
JP3556916B2 (en) * 2000-09-18 2004-08-25 三菱電線工業株式会社 Manufacturing method of semiconductor substrate
JP3679720B2 (en) * 2001-02-27 2005-08-03 三洋電機株式会社 Nitride semiconductor device and method for forming nitride semiconductor
JP2002261392A (en) * 2001-02-27 2002-09-13 Sanyo Electric Co Ltd Nitride-based semiconductor device and its formation method
US6664560B2 (en) * 2001-06-15 2003-12-16 Cree, Inc. Ultraviolet light emitting diode
JP3786054B2 (en) 2001-09-07 2006-06-14 日本電気株式会社 Semiconductor optical device and semiconductor laser
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
US6724013B2 (en) 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
JP3971192B2 (en) 2002-01-11 2007-09-05 株式会社アルバック CVD equipment
US7078735B2 (en) * 2003-03-27 2006-07-18 Sanyo Electric Co., Ltd. Light-emitting device and illuminator
KR20050023540A (en) * 2003-08-28 2005-03-10 서울옵토디바이스주식회사 Light Emitting Devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020066403A1 (en) * 1997-03-13 2002-06-06 Nec Corporation Method for manufacturing group III-V compound semiconductors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140319559A1 (en) * 2013-04-25 2014-10-30 Epistar Corporation Light-emitting device and the manufacturing method thereof
US9112101B2 (en) * 2013-04-25 2015-08-18 Epistar Corporation Light-emitting device manufacturing method

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