JPH10209689A - Manufacture of circuit module - Google Patents

Manufacture of circuit module

Info

Publication number
JPH10209689A
JPH10209689A JP9007771A JP777197A JPH10209689A JP H10209689 A JPH10209689 A JP H10209689A JP 9007771 A JP9007771 A JP 9007771A JP 777197 A JP777197 A JP 777197A JP H10209689 A JPH10209689 A JP H10209689A
Authority
JP
Japan
Prior art keywords
light
substrate
harmonic
irradiation
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9007771A
Other languages
Japanese (ja)
Inventor
Kazutaka Suzuki
一高 鈴木
Koichiro Tsujiku
浩一郎 都竹
Chikashi Nakazawa
睦士 中澤
Noriyoshi Fujii
知徳 藤井
Mitsuo Ueno
光生 上野
Iwao Fujikawa
巌 藤川
Kazuyuki Shibuya
和行 渋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP9007771A priority Critical patent/JPH10209689A/en
Publication of JPH10209689A publication Critical patent/JPH10209689A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To efficiently connect components to a board with irradiation of a laser beam on connecting parts by using a harmonic laser beam for irradiating them. SOLUTION: A second harmonic laser beam LB having a lower reflectivity to a metal of board electrodes 3a than that of the fundamental beam is applied to heat the board electrodes 3a by its irradiation energy, the heat of the electrodes 3a conducts to bumps 2 to melt them, the molten bumps 2 are hardened to electrically connect the electrodes 1a of the components 1 to the electrodes 3 of the board 3. This reduces the reflection loss, raises the absorption ratio to give required energy for connecting the components in a short irradiation time to the bumps 2, thus efficiently connecting the components by the laser beam irradiation in a short time.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、レーザー光の照射
エネルギーを利用して電子部品と基板との接続を行う回
路モジュールの製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a circuit module for connecting an electronic component to a substrate by using irradiation energy of a laser beam.

【0002】[0002]

【従来の技術】図3はこの種従来の部品接続方法を示す
もので、図中の1はIC,LSI等の電子部品、1aは
電子部品1の下面に設けられた電極、2は部品電極1a
に設けられたバンプ(突起電極)、3はレーザー光透過
性の基板、3aは基板3の上面に設けられた電極(ラン
ド)、4はレンズ、Lはレーザー光である。
2. Description of the Related Art FIG. 3 shows a conventional method for connecting components of this type, wherein 1 is an electronic component such as an IC or LSI, 1a is an electrode provided on the lower surface of the electronic component 1, and 2 is a component electrode. 1a
(Projection electrodes), 3 is a laser light transmitting substrate, 3a is an electrode (land) provided on the upper surface of the substrate 3, 4 is a lens, and L is a laser beam.

【0003】バンプ2は各電極1a,3aよりも融点の
低い金属材料、例えばSn−Pb系合金(半田)等から
成り、それ自体が接合材としての役目を果たす。
The bump 2 is made of a metal material having a lower melting point than each of the electrodes 1a and 3a, for example, an Sn-Pb alloy (solder), and itself serves as a bonding material.

【0004】基板3に対して電子部品1を電気的に接続
するには、まず、図示省略の部品吸着具を用いて、電子
部品1をその部品電極1aが基板電極3aに一致するよ
うに位置合わせしてから基板3上に載置する。
In order to electrically connect the electronic component 1 to the substrate 3, first, the electronic component 1 is positioned using an unillustrated component suction tool such that the component electrode 1 a of the electronic component 1 matches the substrate electrode 3 a. After being aligned, it is placed on the substrate 3.

【0005】そして、この部品載置状態で、基板3の下
面側から該基板3を介してレーザー光Lを基板電極3a
に照射する。これにより、レーザー光Lの照射エネルギ
ーによって基板電極3aが加熱され、該基板電極3aか
らの熱伝導によってバンプ2が加熱されて溶融し、該溶
融分の固化によって電子部品1の電極1aと基板3の電
極3aとが電気的に接続される。
[0005] In this component mounting state, a laser beam L is applied from the lower surface side of the substrate 3 through the substrate 3 to the substrate electrode 3a.
Irradiation. As a result, the substrate electrode 3a is heated by the irradiation energy of the laser beam L, the bump 2 is heated and melted by heat conduction from the substrate electrode 3a, and the electrode 1a of the electronic component 1 and the substrate 3 Electrode 3a is electrically connected.

【0006】[0006]

【発明が解決しようとする課題】上記のレーザー光Lに
は、Nd:YAG単結晶を用いたCW発振のQスイッチ
YAGレーザーを発振源とした、波長1064nmで連
続パルス列の赤外光(基本波光)が一般に用いられてい
る。しかし、YAGレーザーの基本波光は金属物質に対
する反射率が高いため、レーザー光照射によってバンプ
等の被接続部に所定のエネルギーを与えるには、反射損
失を補う意味からも必然的にレーザー光照射時間が長く
なり、これによって部品接続に要する時間が嵩む不具合
がある。
The laser light L is an infrared light (basic wave light) of a continuous pulse train at a wavelength of 1064 nm using a CW oscillation Q-switched YAG laser using an Nd: YAG single crystal as an oscillation source. ) Is commonly used. However, since the fundamental wave light of the YAG laser has a high reflectance with respect to a metal substance, it is inevitable to apply a predetermined energy to a connected part such as a bump by irradiating the laser light in order to compensate for the reflection loss. And the time required for component connection increases.

【0007】本発明は上記事情に鑑みてなされたもの
で、その目的とするところは、レーザー光照射による部
品接続を効率よく行える回路モジュールの製造方法を提
供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a circuit module capable of efficiently connecting components by irradiating a laser beam.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するた
め、本発明は、被接続部にレーザー光を照射して電子部
品と基板との接続を行う回路モジュールの製造方法にお
いて、照射レーザー光として高調波光を用いる、ことを
その主たる特徴としている。
In order to achieve the above object, the present invention relates to a method for manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam to a portion to be connected. The use of harmonic light is its main feature.

【0009】本発明によれば、反射損失が少なく吸収率
の高い高調波光を照射レーザー光として用いることによ
り、基本波光を被接続部に照射する場合に比べて短い照
射時間で被加熱部に所望のエネルギーを与えることがで
きる。
According to the present invention, by using a harmonic light having a low reflection loss and a high absorptance as the irradiation laser light, a desired light can be applied to the heated portion in a shorter irradiation time than in the case where the fundamental light is irradiated to the connected portion. Energy can be given.

【0010】[0010]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

[第1実施形態]図1は本発明の第1実施形態に係るも
ので、図中の1はIC,LSI等の電子部品、1aは電
子部品1の下面に設けられた電極、2は部品電極1aに
設けられたバンプ(突起電極)、3は基板、3aは基板
3の上面に設けられた電極(ランド)、4はレンズ、5
はレーザー発振器、6は高調波発生器、7は光分岐器、
8は光ファイバ、LBは第2高調波光である。
[First Embodiment] FIG. 1 relates to a first embodiment of the present invention, in which 1 denotes an electronic component such as an IC or LSI, 1a denotes an electrode provided on the lower surface of the electronic component 1, and 2 denotes a component. Bumps (protrusion electrodes) provided on the electrodes 1a, 3 is a substrate, 3a is an electrode (land) provided on the upper surface of the substrate 3, 4 is a lens, 5
Is a laser oscillator, 6 is a harmonic generator, 7 is an optical splitter,
Reference numeral 8 denotes an optical fiber, and LB denotes second harmonic light.

【0011】基板3はサファイヤ,ジルコニア,フッ化
カルシウム,チッ化アルミ,アルミナ,石英等のセラミ
クスやガラス、またはポリミド,アクリル,PET,シ
リコン,エポキシ,ガラスエポキシ等の樹脂から成り、
レーザー光LBに対し透過性を有している。
The substrate 3 is made of ceramics or glass such as sapphire, zirconia, calcium fluoride, aluminum nitride, alumina, and quartz, or resin such as polyimide, acrylic, PET, silicon, epoxy, and glass epoxy.
It has transparency to the laser beam LB.

【0012】部品電極1aと基板電極3aは金,銀,ア
ルミニウム,銅,ニッケル,白金,パラジウムまたはそ
の合金等から成る。バンプ2は各電極1a,3aよりも
融点の低い金属材料、例えばSn−Pb系合金(半田)
等から成り、それ自体が接合材としての役目を果たす。
The component electrode 1a and the substrate electrode 3a are made of gold, silver, aluminum, copper, nickel, platinum, palladium or an alloy thereof. The bump 2 is made of a metal material having a lower melting point than the electrodes 1a and 3a, for example, an Sn-Pb alloy (solder).
Etc., which themselves serve as a bonding material.

【0013】レーザー発振器5はNd:YAG単結晶を
用いたCW発振のQスイッチYAGレーザーから成り、
波長1064nmで連続パルス列の赤外光(基本波光)
を出射する。
The laser oscillator 5 comprises a CW oscillation Q-switched YAG laser using a Nd: YAG single crystal,
Infrared light (fundamental wave light) of a continuous pulse train at a wavelength of 1064 nm
Is emitted.

【0014】高調波発生器6はKDP,ADP等の非線
形光学結晶素子と高調波分離用のフィルタまたはプリズ
ム等を備え、レーザー発振器5から出射された基本波光
(波長1064nm,赤外光)を、波長532nmのグ
リーン光(第2高調波光)に変換する。
The harmonic generator 6 includes a nonlinear optical crystal element such as KDP and ADP, a filter or a prism for separating harmonics, etc., and outputs the fundamental wave light (wavelength 1064 nm, infrared light) emitted from the laser oscillator 5. The light is converted into green light (second harmonic light) having a wavelength of 532 nm.

【0015】光分岐器7は、高調波発生器6で変換され
た第2高調波光を所定数、ここでは電子部品1の電極数
に応じた数に分岐する。
The optical splitter 7 splits the second harmonic light converted by the harmonic generator 6 into a predetermined number, here a number corresponding to the number of electrodes of the electronic component 1.

【0016】光ファイバ8は石英系のもので、光分岐器
7で分岐された第2高調波光LBを各レンズ4それぞれ
に導く。
The optical fiber 8 is of a silica type, and guides the second harmonic light LB split by the optical splitter 7 to each lens 4.

【0017】レンズ4は、基板3上に載置される電子部
品1の電極位置に対応するように基板3の下側に配置さ
れており、光ファイバ8を介して導かれた第2高調波光
LBを基板3を介して基板電極3aに集光させる。
The lens 4 is disposed on the lower side of the substrate 3 so as to correspond to the electrode position of the electronic component 1 mounted on the substrate 3, and the second harmonic light guided through the optical fiber 8. The LB is condensed on the substrate electrode 3a via the substrate 3.

【0018】つまり、図示例のものでは、電子部品1の
電極数に応じた複数の第2高調波光LBを、基板3の下
側から部品対応の基板電極3aに向けて同時に照射でき
るような光学系が組まれている。
That is, in the example shown in the drawing, an optical system that can simultaneously irradiate a plurality of second harmonic lights LB corresponding to the number of electrodes of the electronic component 1 from the lower side of the substrate 3 toward the substrate electrode 3a corresponding to the component. The system is set up.

【0019】電子部品1と基板3とを電気的に接続する
には、まず、図示省略の部品吸着具を用いて、電子部品
1を部品電極1aと基板電極3aとが一致するように位
置合わせてしてから基板3上に載置する。
In order to electrically connect the electronic component 1 and the substrate 3, first, the electronic component 1 is aligned using a component suction tool (not shown) so that the component electrode 1a and the substrate electrode 3a coincide. And then placed on the substrate 3.

【0020】そして、この部品載置状態で、基板3の下
面側から該基板3を介して第2高調波光LBを基板電極
3aに照射する。これにより、第2高調波光LBの照射
エネルギーによって基板電極3aが加熱され、該基板電
極3aからの熱伝導によってバンプ2が加熱されて溶融
し、該溶融分の固化によって電子部品1の電極1aと基
板3の電極3aとが電気的に接続される。ちなみに、各
基板電極3aに照射される第2高調波光LBのパワーと
照射時間は、事前の接続実験によって決定される。
Then, in this component mounted state, the substrate electrode 3a is irradiated with the second harmonic light LB from the lower surface side of the substrate 3 via the substrate 3. As a result, the substrate electrode 3a is heated by the irradiation energy of the second harmonic light LB, and the bump 2 is heated and melted by heat conduction from the substrate electrode 3a. The electrode 3a of the substrate 3 is electrically connected. Incidentally, the power and irradiation time of the second harmonic light LB applied to each substrate electrode 3a are determined by a preliminary connection experiment.

【0021】本実施形態によれば、基板電極3a等の金
属物質に対する反射率が基本波光よりも低い第2高調波
光LBを照射レーザー光として用いているので、基本波
光を基板電極3aに照射する場合に比べて反射損失を減
少し吸収率を高めて、短い照射時間で部品接続に必要な
エネルギーをバンプ2に付与し、レーザー光照射による
部品接続を短時間で効率よく行うことができる。
According to the present embodiment, since the second harmonic light LB having a lower reflectivity to the metal material such as the substrate electrode 3a than the fundamental light is used as the irradiation laser light, the substrate light is applied to the substrate electrode 3a. As compared with the case, the reflection loss is reduced and the absorptance is increased, the energy required for component connection is applied to the bump 2 in a short irradiation time, and the component connection by laser beam irradiation can be efficiently performed in a short time.

【0022】尚、上記実施形態では、バンプ自体を接合
材として用いたものを示したが、バンプ表面にバンプよ
りも融点の低い接合材層、例えば半田層を設けて、該接
合材層のみを加熱溶融して同様の部品接続を行うように
してもよい。また、バンプを排除しその代わりに部品電
極と基板電極の何れか一方に半田等の接合材を設け、該
接合材を用いて部品電極と基板電極とを接続する場合で
も同様の作用,効果を期待できる。
In the above embodiment, the bump is used as a bonding material. However, a bonding material layer having a lower melting point than the bump, for example, a solder layer is provided on the bump surface, and only the bonding material layer is used. The same components may be connected by heating and melting. The same action and effect can be obtained even when the bumps are eliminated and a bonding material such as solder is provided on one of the component electrode and the substrate electrode, and the component electrode and the substrate electrode are connected using the bonding material. Can be expected.

【0023】また、上記実施形態では、電子部品として
IC,LSI等を例示したが、該実施形態で説明した接
続方法は、チップコンデンサ,チップインダクタ,チッ
プ抵抗器等のチップ状電子部品やこれ以外の電子部品に
も幅広く適用できる。
In the above-described embodiment, an IC, an LSI, or the like is exemplified as the electronic component. However, the connection method described in this embodiment may be applied to a chip-like electronic component such as a chip capacitor, a chip inductor, a chip resistor, or the like. Widely applicable to electronic components.

【0024】さらに、YAGレーザーの基本波光を第2
高調波光に変換しこれを照射するものを例示したが、基
本波光を第3高調波光(波長355nm,ブルー光)や
第4高調波光(波長266nm,紫外光)に変換してか
らこれを照射するようにしても同様の部品接続を行うこ
とができる。
Further, the fundamental wave light of the YAG laser is
In the above-described example, the light is converted into higher harmonic light and radiated, but the fundamental light is converted into third harmonic light (wavelength 355 nm, blue light) or fourth harmonic light (wavelength 266 nm, ultraviolet light) and then irradiated. Even in this case, similar component connection can be performed.

【0025】さらにまた、YAGレーザー光の高調波光
を照射するものを例示したが、CW発振のCO2レーザ
ー を発振源として用い、その基本波光(波長10.6
μm,遠赤外光)を変換して得た高調波光を照射するよ
うにしても同様の作用,効果を得ることができる。
In addition, an example of irradiating harmonic light of YAG laser light has been described, but a CW oscillating CO 2 laser is used as an oscillation source, and its fundamental wave light (wavelength 10.6) is used.
The same operation and effect can be obtained by irradiating harmonic light obtained by converting (μm, far-infrared light).

【0026】さらにまた、基板電極やバンプ等の被接続
部に基板を介して高調波光を照射するものを例示した
が、被接続部に対して直接高調波光を照射してエネルギ
ーを与えるようにしてもよい。
Furthermore, the above-described embodiment irradiates a connected portion such as a substrate electrode or a bump with harmonic light through the substrate. However, the connected portion is directly irradiated with the harmonic light to give energy. Is also good.

【0027】さらにまた、バンプまたは接合材を加熱溶
融して部品接続を行うものを例示したが、上記実施形態
で説明した接続方法は、接合材を用いずに熱圧着によっ
て部品接続を行う場合にも有効であり、詳しくは、基板
上に載置された電子部品に所定の圧力を加えた状態でバ
ンプまたは電極を照射エネルギーによって融点よりも低
い温度に加熱するようすれば、同様の手順にて熱圧着に
より部品接続を行うことができる。
Furthermore, the method of connecting parts by heating and melting the bumps or the bonding material has been exemplified. However, the connection method described in the above embodiment is applicable to the case where the parts are connected by thermocompression bonding without using a bonding material. Is also effective.Specifically, if the bumps or the electrodes are heated to a temperature lower than the melting point by irradiation energy while applying a predetermined pressure to the electronic component mounted on the substrate, the same procedure is used. The components can be connected by thermocompression bonding.

【0028】[第2実施形態]図2は本発明の第2実施
形態に係るもので、図中の11は電子部品1よりも耐熱
性が低い電子部品、11aは電子部品11の下面に設け
られた電極、12は部品電極11aに設けられたバンプ
(突起電極)、LB1は基本波光、LB2は第2高調波
光である。他の構成は第1実施形態と同じであるため同
一符号を用いてその説明を省略する。
[Second Embodiment] FIG. 2 relates to a second embodiment of the present invention, in which 11 is an electronic component having lower heat resistance than the electronic component 1, and 11a is provided on the lower surface of the electronic component 11. Reference numeral 12 denotes a bump (projection electrode) provided on the component electrode 11a, LB1 denotes a fundamental light, and LB2 denotes a second harmonic light. The other configuration is the same as that of the first embodiment, and the description thereof will be omitted using the same reference numerals.

【0029】本実施形態が第1実施形態と異なるところ
は、基板3上に接続される電子部品の種類に応じて基本
波光と第2高調波光を選択的に用いた点にある。例え
ば、耐熱性に差のある2種類の電子部品1,11を基板
3に接続する場合に、低耐熱性の電子部品11には急激
な温度上昇を避けるためにYAGレーザー光の基本波光
LB1を使用し、一方、高耐熱性の電子部品1には第1
実施形態と同様にYAGレーザー光の第2基本波光LB
2を使用してその接続を行うようにしている。
The present embodiment differs from the first embodiment in that fundamental light and second harmonic light are selectively used in accordance with the type of electronic component connected on the substrate 3. For example, when two kinds of electronic components 1 and 11 having different heat resistances are connected to the substrate 3, the fundamental wave light LB <b> 1 of the YAG laser light is applied to the low heat resistance electronic components 11 in order to avoid a rapid temperature rise. Used, while the first heat-resistant electronic component 1
As in the embodiment, the second fundamental wave light LB of the YAG laser light
2 is used to make the connection.

【0030】ちなみに、図示例では、各電子部品1,1
1の電極1a,11aに対して、基本波光LB1と第2
高調波光LB2を基板3の下側から同時に照射できるよ
うにしたものを示してあるが、基本波光と第2高調波光
を選択的に照射できる光学系を用いて、各電子部品1,
11毎に基本波光と第2高調波光を適宜切り替えて照射
するようにしてもよい。
In the example shown, each of the electronic components 1, 1
The fundamental wave light LB1 and the second
Although it is shown that the harmonic light LB2 can be simultaneously irradiated from the lower side of the substrate 3, the electronic components 1 and 2 can be selectively irradiated with the fundamental light and the second harmonic light by using an optical system.
The irradiation may be performed by appropriately switching the fundamental wave light and the second harmonic light every 11.

【0031】本実施形態によれば、基板3上に接続され
る電子部品の種類に応じて基本波光LB1と第2高調波
光LB2を使い分けることにより、部品接続時に電子部
品が受ける熱的ダメージを軽減して、該ダメージによる
品質低下を防止することができる。第2高調波光LB2
を用いることによる作用,効果は第1実施形態と同様で
ある。
According to the present embodiment, by using the fundamental light LB1 and the second harmonic light LB2 selectively according to the type of electronic component connected on the substrate 3, thermal damage to the electronic component at the time of component connection is reduced. As a result, it is possible to prevent quality deterioration due to the damage. Second harmonic light LB2
The operation and effect of using are the same as in the first embodiment.

【0032】尚、上記実施形態では、YAGレーザーの
基本波光と第2高調波光を選択的に用いるものを例示し
たが、第2高調波光以外の高調波光と基本波光を選択的
に用いてもよく、或いは、基本波光を用いずに第2乃至
第4高調波光を選択的に用いるようにしてもよい。
In the above embodiment, an example in which the fundamental wave light and the second harmonic light of the YAG laser are selectively used has been described. However, the harmonic light other than the second harmonic light and the fundamental light may be selectively used. Alternatively, the second to fourth harmonic light may be selectively used without using the fundamental light.

【0033】また、YAGレーザー光の基本波光と高調
波光を選択的に用いるものを例示したが、CW発振のC
2レーザー を発振源として用い、その基本波光と高調
波光を選択的に用いるようにしても同様の作用,効果を
得ることができる。
Also, an example in which the fundamental wave light and the harmonic wave light of the YAG laser light are selectively used has been described.
Similar functions and effects can be obtained by using an O 2 laser as an oscillation source and selectively using its fundamental light and harmonic light.

【0034】[0034]

【発明の効果】以上詳述したように、本発明によれば、
高調波光を照射レーザー光として用いることにより、基
本波光を被接続部に照射する場合に比べて反射損失を減
少し吸収率を高めて、短い照射時間で部品接続に必要な
エネルギーを被接続部に付与し、レーザー光照射による
部品接続を短時間で効率よく行うことができる。
As described in detail above, according to the present invention,
By using the harmonic light as the irradiation laser light, the reflection loss is reduced and the absorptance is increased compared to the case where the fundamental wave light is irradiated to the connected part, and the energy required for component connection to the connected part in a short irradiation time It is possible to efficiently connect components by laser beam irradiation in a short time.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施形態に係る部品接続方法を示
す図
FIG. 1 is a diagram showing a component connection method according to a first embodiment of the present invention.

【図2】本発明の第2実施形態に係る部品接続方法を示
す図
FIG. 2 is a diagram showing a component connection method according to a second embodiment of the present invention.

【図3】従来の部品接続方法を示す図FIG. 3 is a diagram showing a conventional component connection method.

【符号の説明】[Explanation of symbols]

1…電子部品、1a…部品電極、2…バンプ、3…基
板、3a…基板電極、4…レンズ、5…レーザー発振
器、6…高調波発生器、7…光分岐器、8…光ファイ
バ、LB…第2高調波光、11…電子部品、11a…部
品電極、12…バンプ、LB1…基本波光、LB2…第
2高調波光。
DESCRIPTION OF SYMBOLS 1 ... Electronic component, 1a ... Component electrode, 2 ... Bump, 3 ... Substrate, 3a ... Substrate electrode, 4 ... Lens, 5 ... Laser oscillator, 6 ... Harmonic generator, 7 ... Optical splitter, 8 ... Optical fiber, LB: second harmonic light, 11: electronic component, 11a: component electrode, 12: bump, LB1: fundamental wave light, LB2: second harmonic light.

フロントページの続き (72)発明者 藤井 知徳 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 上野 光生 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 藤川 巌 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 渋谷 和行 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内Continued on the front page (72) Inventor Tomonori Fujii 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Denki Co., Ltd. (72) Mitsuo Ueno 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Denki Stock Within the company (72) Inventor Iwao Fujikawa 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Denki Co., Ltd. (72) Inventor Kazuyuki Shibuya 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Denki Co., Ltd. Inside

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 被接続部にレーザー光を照射して電子部
品と基板との接続を行う回路モジュールの製造方法にお
いて、 照射レーザー光として高調波光を用いる、 ことを特徴とする回路モジュールの製造方法。
1. A method of manufacturing a circuit module for irradiating a connected portion with a laser beam to connect an electronic component and a substrate, wherein a harmonic light is used as an irradiating laser beam. .
【請求項2】 照射レーザー光として基本波光を併用
し、基板に対する部品接続に高調波光と基本波光を選択
的に用いる、 ことを特徴とする請求項1記載の回路モジュールの製造
方法。
2. The method for manufacturing a circuit module according to claim 1, wherein fundamental wave light is used in combination as irradiation laser light, and harmonic light and fundamental wave light are selectively used for connecting components to a substrate.
【請求項3】 照射レーザー光の発振源がYAGレーザ
ーである、 ことを特徴とする請求項1または2記載の回路モジュー
ルの製造方法。
3. The method for manufacturing a circuit module according to claim 1, wherein the oscillation source of the irradiation laser light is a YAG laser.
【請求項4】 照射レーザー光の発振源がCO2レーザ
である、 ことを特徴とする請求項1または2記載の回路モジュー
ルの製造方法。
4. The oscillation source of the irradiation laser light is a CO 2 laser. The method for manufacturing a circuit module according to claim 1, wherein:
【請求項5】 基本波光を非線形光学結晶素子を用いて
高調波光に変換する、 ことを特徴とする請求項1乃至4の何れか1項記載の回
路モジュールの製造方法。
5. The method for manufacturing a circuit module according to claim 1, wherein the fundamental wave light is converted into higher harmonic light using a nonlinear optical crystal element.
JP9007771A 1997-01-20 1997-01-20 Manufacture of circuit module Withdrawn JPH10209689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9007771A JPH10209689A (en) 1997-01-20 1997-01-20 Manufacture of circuit module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9007771A JPH10209689A (en) 1997-01-20 1997-01-20 Manufacture of circuit module

Publications (1)

Publication Number Publication Date
JPH10209689A true JPH10209689A (en) 1998-08-07

Family

ID=11674950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9007771A Withdrawn JPH10209689A (en) 1997-01-20 1997-01-20 Manufacture of circuit module

Country Status (1)

Country Link
JP (1) JPH10209689A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777575B1 (en) * 2006-03-20 2007-11-16 주식회사 젯텍 A Bonding Method and Apparatus for Electronic Elements Using Laser Beam
JP2008277438A (en) * 2007-04-26 2008-11-13 Ricoh Microelectronics Co Ltd Electronic component, substrate, and method of manufacturing electronic component and substrate
JP2011521233A (en) * 2008-05-15 2011-07-21 ロッキード・マーチン・コーポレーション Improved mid-infrared laser for generating ultrasound using a CO2 laser and harmonic generation
DE102007062202B4 (en) * 2007-12-21 2021-06-10 Vitesco Technologies GmbH Description Process for contacting a rigid circuit board with a contact partner and an arrangement of rigid circuit board and contact partner

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777575B1 (en) * 2006-03-20 2007-11-16 주식회사 젯텍 A Bonding Method and Apparatus for Electronic Elements Using Laser Beam
JP2008277438A (en) * 2007-04-26 2008-11-13 Ricoh Microelectronics Co Ltd Electronic component, substrate, and method of manufacturing electronic component and substrate
DE102007062202B4 (en) * 2007-12-21 2021-06-10 Vitesco Technologies GmbH Description Process for contacting a rigid circuit board with a contact partner and an arrangement of rigid circuit board and contact partner
JP2011521233A (en) * 2008-05-15 2011-07-21 ロッキード・マーチン・コーポレーション Improved mid-infrared laser for generating ultrasound using a CO2 laser and harmonic generation
TWI468663B (en) * 2008-05-15 2015-01-11 Lockheed Corp Method of ultrasonic testing a target object made of composite materials using a high energy generation laser beam and ultrasonic detection system

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