JPH10190209A - Manufacture of circuit module - Google Patents

Manufacture of circuit module

Info

Publication number
JPH10190209A
JPH10190209A JP35069096A JP35069096A JPH10190209A JP H10190209 A JPH10190209 A JP H10190209A JP 35069096 A JP35069096 A JP 35069096A JP 35069096 A JP35069096 A JP 35069096A JP H10190209 A JPH10190209 A JP H10190209A
Authority
JP
Japan
Prior art keywords
substrate
heat
electronic component
electrode
bonding material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP35069096A
Other languages
Japanese (ja)
Inventor
Kazutaka Suzuki
一高 鈴木
Koichiro Tsujiku
浩一郎 都竹
Chikashi Nakazawa
睦士 中澤
Noriyoshi Fujii
知徳 藤井
Mitsuo Ueno
光生 上野
Iwao Fujikawa
巌 藤川
Kazuyuki Shibuya
和行 渋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP35069096A priority Critical patent/JPH10190209A/en
Publication of JPH10190209A publication Critical patent/JPH10190209A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating methods for reflowing of solder

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a circuit module excellently connecting parts by reducing thermal and mechanical damage received by the electronic parts, a substrate, etc. SOLUTION: A sudden rise from the normal temperature of the temperatures of the whole electronic parts and the whole laser-beam transmitting substrate 3 is prevented and the thermal damage of the electronic parts and the substrate can be reduced by irradiating substrate electrodes 3a (bumps 2) with laser beams LB through the substrate 3 while stress generated due to the difference of thermal expansion coefficients is decreased, and the mechanical damage of the electronic parts and the substrate can be diminished. Thermal energy required for connecting the parts is supplemented by either one of heat and ultrasonic vibrations by imparting either one of heat and ultrasonic vibrations to the bumps 2 at the same time as the irradiation of laser beams LB, and the connecting time of the parts can be shortened.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、レーザ光線または
電磁波の照射エネルギーを利用して電子部品と基板との
接続を行う回路モジュールの製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a circuit module for connecting an electronic component to a substrate by using irradiation energy of a laser beam or an electromagnetic wave.

【0002】[0002]

【従来の技術】IC,LSI等の電子部品の接続方法と
して知られるフェイスダウンボンディング法は、電子部
品の電極と基板の電極とをバンプを介して電気的に接続
する方法で、そのボンディング方式には、圧力及び熱を
併用して拡散接合を行う熱圧着方式や、圧力及び超音波
振動を併用して固相接合を行う超音波方式や、熱によっ
てバンプまたは接合材を溶かして接合を行う溶融接合方
式がある。
2. Description of the Related Art A face-down bonding method known as a method of connecting electronic components such as ICs and LSIs is a method of electrically connecting electrodes of an electronic component and electrodes of a substrate via bumps. Is a thermocompression bonding method that performs diffusion bonding using both pressure and heat, an ultrasonic method that performs solid-phase bonding using both pressure and ultrasonic vibration, and a melting method that uses heat to melt bumps or bonding materials to perform bonding. There is a joining method.

【0003】[0003]

【発明が解決しようとする課題】上記の各ボンディング
方式は何れも熱エネルギーを利用したものであるが、中
でも熱圧着方式と溶融接合方式は、電子部品及び基板に
外部から熱エネルギーを与える関係から、熱エネルギー
付与時に電子部品全体及び基板全体の温度が常温域から
高温域まで急激に上昇し、この急激な温度変化によって
電子部品及び基板が熱的ダメージを強く受けて品質低下
等を生じる恐れがあると共に、電子部品と基板との熱膨
張係数の違いにより昇温時と降温時の両方で発生する応
力によって、電子部品及び基板と両者の接続部分が機械
的ダメージを受けてクラック等を生じる恐れがある。
The above-mentioned respective bonding methods use thermal energy. Among them, the thermocompression bonding method and the fusion bonding method are based on the relation that external thermal energy is applied to electronic parts and substrates. However, when heat energy is applied, the temperature of the entire electronic component and the entire substrate rapidly rises from a normal temperature range to a high temperature range. In addition, the stress generated during both temperature rise and temperature decrease due to the difference in the coefficient of thermal expansion between the electronic component and the substrate may cause mechanical damage to the connection between the electronic component and the substrate and both, causing cracks and the like. There is.

【0004】本発明は上記事情に鑑みてなされたもの
で、その目的とするところは、電子部品及び基板等が受
ける熱的及び機械的ダメージを軽減して部品接続を良好
に行える回路モジュールの製造方法を提供することにあ
る。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to manufacture a circuit module capable of reducing thermal and mechanical damage to an electronic component and a substrate to achieve good component connection. It is to provide a method.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するた
め、請求項1の発明は、電子部品と基板とを電気的に接
続する回路モジュールの製造方法において、部品電極と
基板電極の一方に接合材を設け、電子部品を基板に載置
した状態で、接合材に向けてレーザ光線または電磁波を
照射すると同時に、該接合材に熱と超音波振動の少なく
とも一方を付与する、ことをその特徴としている。
According to a first aspect of the present invention, there is provided a method of manufacturing a circuit module for electrically connecting an electronic component and a substrate, the method comprising: bonding a component electrode to one of a substrate electrode; In the state where the material is provided and the electronic component is mounted on the substrate, at the same time as irradiating the bonding material with a laser beam or an electromagnetic wave, at least one of heat and ultrasonic vibration is applied to the bonding material, I have.

【0006】この請求項1の発明によれば、接合材に向
けてレーザ光線または電磁波を照射しているので、照射
時における温度上昇を部分的なものに止めて、電子部品
全体及び基板全体の温度が上昇することを防止できる。
また、レーザ光線または電磁波の照射と同時に、接合材
に熱と超音波振動の少なくとも一方を付与することで、
部品接続に必要な熱エネルギーを熱及び超音波振動の両
方、または熱と超音波振動の一方によって補うことがで
きる。
According to the first aspect of the present invention, since the bonding material is irradiated with the laser beam or the electromagnetic wave, the temperature rise at the time of the irradiation is partially stopped, and the entire electronic component and the entire substrate are irradiated. The temperature can be prevented from rising.
Also, by applying at least one of heat and ultrasonic vibration to the bonding material simultaneously with the irradiation of the laser beam or the electromagnetic wave,
The thermal energy required for component connection can be supplemented by both heat and ultrasonic vibration, or by one of heat and ultrasonic vibration.

【0007】また、請求項2の発明は、電子部品と基板
とを電気的に接続する回路モジュールの製造方法におい
て、基板電極に接合材を設け、接合材に向けてレーザ光
線または電磁波を照射した後に、電子部品を基板に載置
し、接合材に熱と超音波振動の少なくとも一方を付与す
る、ことをその特徴としている。
According to a second aspect of the present invention, in the method for manufacturing a circuit module for electrically connecting an electronic component and a substrate, a bonding material is provided on the substrate electrode, and the bonding material is irradiated with a laser beam or an electromagnetic wave. Thereafter, the electronic component is mounted on a substrate, and at least one of heat and ultrasonic vibration is applied to the bonding material.

【0008】この請求項2の発明によれば、電子部品を
基板に載置する前に、接合材に向けてレーザ光線または
電磁波を照射しているので、照射時における温度上昇を
接合材及びその近傍部分に止めて、基板全体の温度が上
昇することを防止でき、電子部品に余計な熱が伝わらな
い。また、レーザ光線または電磁波を照射した後に、接
合材に熱と超音波振動の少なくとも一方を付与すること
で、部品接続に必要な熱エネルギーを熱及び超音波振動
の両方、または熱と超音波振動の一方によって補うこと
ができる。
According to the second aspect of the present invention, before the electronic component is mounted on the substrate, the bonding material is irradiated with a laser beam or an electromagnetic wave. By stopping in the vicinity, it is possible to prevent the temperature of the entire substrate from rising, and unnecessary heat is not transmitted to the electronic components. In addition, by applying at least one of heat and ultrasonic vibration to the bonding material after irradiating the laser beam or the electromagnetic wave, the heat energy required for connecting the components can be converted to both heat and ultrasonic vibration, or heat and ultrasonic vibration. Can be supplemented by one of

【0009】[0009]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

[第1実施形態]図1及び図2は本発明の第1実施形態
に係るもので、図中の1はIC,LSI等の電子部品、
1aは電子部品1の下面に設けられた電極、2は部品電
極1aに設けられたバンプ、3は基板、3aは基板3の
上面に設けられた電極、4は部品吸着を可能としたコレ
ット、5はコレット4に内蔵された電熱ヒータ、6はコ
レット4に付設された超音波振動器、LBはレーザ光
線、Leは集光レンズである。
[First Embodiment] FIGS. 1 and 2 relate to a first embodiment of the present invention, in which 1 denotes an electronic component such as an IC or an LSI,
1a is an electrode provided on the lower surface of the electronic component 1, 2 is a bump provided on the component electrode 1a, 3 is a substrate, 3a is an electrode provided on the upper surface of the substrate 3, 4 is a collet capable of adsorbing components, 5 is an electric heater built in the collet 4, 6 is an ultrasonic vibrator attached to the collet 4, LB is a laser beam, and Le is a condenser lens.

【0010】部品電極1aと基板電極3aは金,銀,ア
ルミニウム,銅,ニッケルまたはその合金等から成る。
バンプ2は各電極1a,3aよりも融点の低い金属、例
えばSn−Pb系合金(半田)やその他の金属材料から
成り、図示例のものではバンプ自体が接合材として用い
られる。
The component electrode 1a and the substrate electrode 3a are made of gold, silver, aluminum, copper, nickel or an alloy thereof.
The bump 2 is made of a metal having a lower melting point than each of the electrodes 1a and 3a, for example, an Sn-Pb-based alloy (solder) or another metal material. In the illustrated example, the bump itself is used as a bonding material.

【0011】基板3はレーザ光線LBに対し透過性を有
するサファイヤ,ジルコニア,フッ化カルシウム,チッ
化アルミ、石英等のセラミクスやガラス、またはポリミ
ド,アクリル,PET,ガラスエポキシ等の樹脂から成
る。
The substrate 3 is made of a ceramic or glass such as sapphire, zirconia, calcium fluoride, aluminum nitride, quartz, etc., which has transparency to the laser beam LB, or a resin such as polyamide, acrylic, PET, glass epoxy, or the like.

【0012】コレット4は複数のエア吸引孔を下面に有
しており、これらエア吸引孔に所定の負圧を作用させる
ことにより、電子部品1の上面を複数箇所で吸引して吸
着する。
The collet 4 has a plurality of air suction holes on its lower surface. By applying a predetermined negative pressure to these air suction holes, the upper surface of the electronic component 1 is sucked and sucked at a plurality of locations.

【0013】電熱ヒータ5と超音波振動器6は、コレッ
ト4に吸着された電子部品1を介してバンプ2と基板電
極3aの接触部位に熱と超音波振動を選択的に与えるた
めのもので、電熱ヒータ作動時にはバンプ2と基板電極
3aの接触部位は常温域よりも高い温度に加熱され、一
方、超音波振動器作動時にはバンプ2と基板電極3aの
接触部位に周波数十kHz程度の横向き微振動が加えら
れる。
The electric heater 5 and the ultrasonic vibrator 6 are for selectively applying heat and ultrasonic vibration to the contact portion between the bump 2 and the substrate electrode 3a via the electronic component 1 adsorbed on the collet 4. When the electric heater is activated, the contact area between the bump 2 and the substrate electrode 3a is heated to a temperature higher than the normal temperature range. On the other hand, when the ultrasonic vibrator is activated, the contact area between the bump 2 and the substrate electrode 3a has a horizontal fineness of about 10 kHz. Vibration is applied.

【0014】レーザ光線LBは、YAGレーザやCO2
レーザ 等のレーザ発振器(図示省略)から出射された
赤外領域や紫外領域のもので、集光レンズLeを介して
基板3の下面側から基板電極3aに向けて照射される。
ちなみに、図示例のものでは、所望数のレーザ光線LB
を同時に照射できるような光学系が組まれている。この
レーザ光線LBの波長,出力及び周波数等は、基板3の
レーザ光線透過率やバンプ2の材質や大きさ等によって
予め設定される。
The laser beam LB is a YAG laser or CO 2
The light is emitted from a laser oscillator (not shown) such as a laser or the like in an infrared region or an ultraviolet region, and is irradiated from the lower surface side of the substrate 3 toward the substrate electrode 3a via the condenser lens Le.
Incidentally, in the illustrated example, the desired number of laser beams LB
Optical system that can simultaneously irradiate the light. The wavelength, output, frequency, and the like of the laser beam LB are set in advance by the laser beam transmittance of the substrate 3 and the material and size of the bump 2.

【0015】電子部品1と基板3とを電気的に接続する
には、まず、コレット4に吸着された電子部品1を部品
電極1aと基板電極3aとが一致するように位置合わせ
してから基板3上に載置する。この部品載置課程では電
熱ヒータ5と超音波振動器6の少なくとも一方を作動
し、コレット4及び電子部品1を介してバンプ2に熱及
び超音波振動の両方、または熱と超音波振動の一方を付
与する。また、これと同時に、基板3の下面側から基板
電極3a(バンプ2)に向けてレーザ光線LBを照射す
る。
In order to electrically connect the electronic component 1 and the substrate 3, the electronic component 1 adsorbed by the collet 4 is first positioned so that the component electrode 1a and the substrate electrode 3a coincide with each other. Place on 3 In this component mounting process, at least one of the electric heater 5 and the ultrasonic vibrator 6 is operated, and both the heat and the ultrasonic vibration or one of the heat and the ultrasonic vibration is applied to the bump 2 via the collet 4 and the electronic component 1. Is given. At the same time, a laser beam LB is irradiated from the lower surface side of the substrate 3 toward the substrate electrode 3a (bump 2).

【0016】これにより、基板3を透過したレーザ光線
LBの熱エネルギーと、電熱ヒータ5からの熱(熱エネ
ルギー)と超音波振動器6からの超音波振動(振動摩擦
による熱エネルギー)の少なくとも一方によって、バン
プ2の少なくとも表面部分が加熱溶融され、該溶融分の
固化によって電子部品1の電極1aと基板3の電極3a
とがバンプ2を介して電気的に接続される。
As a result, at least one of the thermal energy of the laser beam LB transmitted through the substrate 3, the heat from the electric heater 5 (heat energy), and the ultrasonic vibration from the ultrasonic vibrator 6 (heat energy due to vibration friction). As a result, at least a surface portion of the bump 2 is heated and melted, and the electrode 1 a of the electronic component 1 and the electrode 3 a
Are electrically connected via the bump 2.

【0017】本実施形態によれば、レーザ光線透過性の
基板3を通じて基板電極3a(バンプ2)に向けてレー
ザ光線LBを照射しているので、該レーザ光線照射によ
る温度上昇を部分的なものに止めて、電子部品全体及び
基板全体の温度が常温域から高温域まで急激に上昇する
ことを防止し、電子部品1及び基板3が受ける熱的ダメ
ージを軽減することができる。しかも、基板全体の温度
が上昇することがないので、電子部品1と基板3とに熱
膨張係数の違いがあってもこれを原因として発生する応
力を低減し、電子部品1及び基板3と両者の接続部分が
受ける機械的ダメージを軽減することができる。
According to the present embodiment, since the laser beam LB is irradiated to the substrate electrode 3a (bump 2) through the laser beam transmitting substrate 3, the temperature rise due to the laser beam irradiation is partially reduced. Thus, the temperature of the entire electronic component and the entire substrate can be prevented from rising rapidly from the normal temperature range to the high temperature range, and the thermal damage to the electronic component 1 and the substrate 3 can be reduced. In addition, since the temperature of the entire substrate does not rise, even if there is a difference in the coefficient of thermal expansion between the electronic component 1 and the substrate 3, the stress generated due to this difference is reduced. Can reduce the mechanical damage to the connecting portion.

【0018】また、上記レーザ光線LBの照射と同時
に、バンプ2に熱と超音波振動の何れか一方を付与して
いるので、部品接続に必要な熱エネルギーをこれら熱及
び超音波振動、または熱と超音波振動と熱の一方により
補って、部品接続時間を短縮することができ、この部品
接続時間の短縮によって上記の熱的及び機械的ダメージ
をより一層軽減することができる。
Since one of heat and ultrasonic vibration is applied to the bump 2 at the same time as the irradiation of the laser beam LB, the heat energy required for connecting the components is supplied by the heat and ultrasonic vibration or heat. And ultrasonic vibration and heat, the component connection time can be reduced, and the thermal and mechanical damage described above can be further reduced by reducing the component connection time.

【0019】尚、上記実施形態では、バンプ自体を接合
材として部品接続を行うものを例示したが、バンプ表面
にバンプよりも融点の低い接合材層、例えば半田層を設
けて、該接合材層のみを加熱溶融して同様の部品接続を
行うようにしてもよい。
In the above-described embodiment, an example in which the bump itself is used as a bonding material to perform component connection is described. Only the components may be heated and melted to perform the same component connection.

【0020】[第2実施形態]図3及び図4は本発明の
第2実施形態に係るもので、本実施形態が第1実施形態
と異なるところは、部品電極3aからバンプ2を排除
し、基板電極3aにバンプ7を設けた点にある。このバ
ンプ7は、周知のワイヤーボンダーで形成したボールバ
ンプであり、各電極1a,3aよりも融点の低い金属材
料、例えばSn−Pb系合金(半田)等から成る。他の
構成及び接続方法は第1実施形態と同じであるため同一
符号を用いその説明を省略する。
[Second Embodiment] FIGS. 3 and 4 relate to a second embodiment of the present invention. The present embodiment is different from the first embodiment in that the bumps 2 are eliminated from the component electrodes 3a. The point is that the bump 7 is provided on the substrate electrode 3a. The bump 7 is a ball bump formed by a known wire bonder, and is made of a metal material having a lower melting point than the electrodes 1a and 3a, for example, an Sn-Pb alloy (solder) or the like. The other configuration and connection method are the same as those of the first embodiment, and therefore the same reference numerals are used and the description is omitted.

【0021】本実施形態によれば、基板電極3aにバン
プ7を形成しているので、部品電極1aにバンプを設け
る場合に比べてバンプ形成を容易に行うことができる。
According to this embodiment, since the bumps 7 are formed on the substrate electrodes 3a, the bumps can be formed more easily than when bumps are provided on the component electrodes 1a.

【0022】他の作用,効果は第1実施形態と同様であ
り、勿論、バンプ表面にバンプよりも融点の低い接合材
層を設けて、該接合材層のみを加熱溶融して同様の部品
接続を行うようにしてもよい。
Other functions and effects are the same as those of the first embodiment. Of course, a bonding material layer having a lower melting point than the bump is provided on the bump surface, and only the bonding material layer is heated and melted to connect the same parts. May be performed.

【0023】[第3の実施形態]図5乃至図7は本発明
の第3実施形態に係るもので、本実施形態が第1実施形
態と異なるところは、部品電極1aからバンプ2を排除
し、基板電極3aに低融点の接合材8を該電極3aの上
面または全体を覆うように設けた点にある。この接合材
8はSn,Sn−Pb系合金,Sn−Ag系合金等から
成り、基板電極3aよりも融点が低い。他の構成は第1
実施形態と同じであるため同一符号を用いその説明を省
略する。
[Third Embodiment] FIGS. 5 to 7 relate to a third embodiment of the present invention. This embodiment is different from the first embodiment in that the bump 2 is eliminated from the component electrode 1a. In addition, a low melting point bonding material 8 is provided on the substrate electrode 3a so as to cover the upper surface or the entirety of the electrode 3a. The joining material 8 is made of Sn, Sn-Pb-based alloy, Sn-Ag-based alloy, or the like, and has a lower melting point than the substrate electrode 3a. Other configurations are the first
Since this embodiment is the same as the embodiment, the same reference numerals are used and the description is omitted.

【0024】電子部品1と基板3とを電気的に接続する
には、まず、基板3の下面側から基板電極3a(接合材
8)に向けてレーザ光線LBに照射し、基板3を透過し
たレーザ光線LBの熱エネルギーによって接合材8の少
なくとも表面部分を加熱溶融する。そして、コレット4
に吸着された電子部品1を部品電極1aと基板電極3a
とが一致するように位置合わせしてから基板3上に載置
する。この部品載置課程では電熱ヒータ5と超音波振動
器6の少なくとも一方を作動し、コレット4及び電子部
品1を介してバンプ2に熱及び超音波振動の両方、また
は熱と超音波振動の一方を付与する。
In order to electrically connect the electronic component 1 and the substrate 3, first, a laser beam LB is irradiated from the lower surface side of the substrate 3 toward the substrate electrode 3 a (bonding material 8) and transmitted through the substrate 3. The thermal energy of the laser beam LB heats and fuses at least the surface of the bonding material 8. And collet 4
The electronic component 1 adsorbed on the substrate electrode 1a and the substrate electrode 3a
And then placed on the substrate 3. In this component mounting process, at least one of the electric heater 5 and the ultrasonic vibrator 6 is operated, and both the heat and the ultrasonic vibration or one of the heat and the ultrasonic vibration is applied to the bump 2 via the collet 4 and the electronic component 1. Is given.

【0025】これにより、先に加熱溶融された接合材8
が、電熱ヒータ5からの熱(熱エネルギー)と超音波振
動器6からの超音波振動(振動摩擦による熱エネルギ
ー)の少なくとも一方によってさらに溶融し、該溶融分
の固化によって電子部品1の電極1aと基板3の電極3
aとが接合材8を介して電気的に接続される。
Thus, the bonding material 8 previously heated and melted
Is further melted by at least one of heat (heat energy) from the electric heater 5 and ultrasonic vibration (heat energy due to vibration friction) from the ultrasonic vibrator 6, and the electrode 1 a of the electronic component 1 is solidified by solidification of the melted portion. And electrode 3 of substrate 3
a are electrically connected via the bonding material 8.

【0026】本実施形態によれば、電子部品1を基板3
上に載置する前に、レーザ光線透過性の基板3を通じて
基板電極3a(バンプ2)に向けてレーザ光線LBを照
射しているので、部品載置後にレーザ光線LBを照射す
る場合に比べて電子部品1に余計な熱が伝わらない利点
がある。他の作用,効果は第1実施形態と同様である。
According to the present embodiment, the electronic component 1 is
Since the laser beam LB is irradiated to the substrate electrode 3a (bump 2) through the laser beam transmitting substrate 3 before mounting on the upper part, compared with the case where the laser beam LB is irradiated after the parts are mounted. There is an advantage that unnecessary heat is not transmitted to the electronic component 1. Other operations and effects are the same as those of the first embodiment.

【0027】[第4実施形態]図8及び図9は本発明の
第4実施形態に係るもので、本実施形態が第1実施形態
と異なるところは、部品電極1aからバンプ2を排除
し、基板電極3aに軟質の接合材9を該電極3aの上面
または全体を覆うように設けた点にある。この接合材9
はPb,In,Ga等から成り、基板電極3aよりも柔
らかく塑性変形し易い。他の構成は第1実施形態と同じ
であるため同一符号を用いその説明を省略する。
[Fourth Embodiment] FIGS. 8 and 9 relate to a fourth embodiment of the present invention. This embodiment is different from the first embodiment in that the bump 2 is eliminated from the component electrode 1a. The point is that a soft bonding material 9 is provided on the substrate electrode 3a so as to cover the upper surface or the whole of the electrode 3a. This joining material 9
Is made of Pb, In, Ga, or the like, and is softer and more easily plastically deformed than the substrate electrode 3a. The other configuration is the same as that of the first embodiment, so the same reference numerals are used and the description is omitted.

【0028】電子部品1と基板3とを電気的に接続する
には、まず、コレット4に吸着された電子部品1を部品
電極1aと基板電極3aとが一致するように位置合わせ
してから基板3上に載置する。この部品載置課程では電
熱ヒータ5と超音波振動器6の少なくとも一方を作動
し、コレット4及び電子部品1を介して接合材9に熱及
び超音波振動の両方、または熱と超音波振動の一方を付
与する。また、これと同時に、基板3の下面側から基板
電極3a(接合材9)に向けてレーザ光線LBを照射す
る。
In order to electrically connect the electronic component 1 and the substrate 3, first, the electronic component 1 adsorbed by the collet 4 is positioned so that the component electrode 1 a and the substrate electrode 3 a coincide with each other. Place on 3 In this component mounting process, at least one of the electric heater 5 and the ultrasonic vibrator 6 is operated, and both the thermal and ultrasonic vibrations or the thermal and ultrasonic vibrations are applied to the bonding material 9 via the collet 4 and the electronic component 1. Give one. At the same time, a laser beam LB is irradiated from the lower surface side of the substrate 3 toward the substrate electrode 3a (bonding material 9).

【0029】これにより、基板3を透過したレーザ光線
LBの熱エネルギーと、電熱ヒータ5からの熱(熱エネ
ルギー)と超音波振動器6からの超音波振動(振動摩擦
による熱エネルギー)の少なくとも一方によって、接合
材9の少なくとも表面部分が加熱溶融され、該溶融分の
固化によって電子部品1の電極1aと基板3の電極3a
とがバンプ2を介して電気的に接続される。
As a result, at least one of the thermal energy of the laser beam LB transmitted through the substrate 3, the heat from the electric heater 5 (thermal energy), and the ultrasonic vibration from the ultrasonic vibrator 6 (thermal energy due to vibration friction). As a result, at least a surface portion of the bonding material 9 is heated and melted, and the electrode 1a of the electronic component 1 and the electrode 3a
Are electrically connected via the bump 2.

【0030】本実施形態によれば、接合材9として基板
電極3aよりも柔らかく塑性変形し易いものを用いてい
るため、電子部品1と基板3との熱膨張係数の違いによ
って発生する応力を該接合材9により効果的に吸収し
て、電子部品1及び基板3と両者の接続部分が受ける機
械的ダメージをより一層軽減することができる。他の作
用,効果は第1実施形態と同様である。
According to the present embodiment, since the bonding material 9 is softer and more easily plastically deformed than the substrate electrode 3a, the stress generated due to the difference in the thermal expansion coefficient between the electronic component 1 and the substrate 3 is reduced. It can be effectively absorbed by the bonding material 9 to further reduce the mechanical damage to the electronic component 1 and the substrate 3 and the connection between them. Other operations and effects are the same as those of the first embodiment.

【0031】[第5実施形態]図10及び図11は本発
明の第5実施形態に係るもので、本実施形態が第1実施
形態と異なるところは、基板10とその電極10aとの
間に、絶縁性と熱伝導性に優れた放熱層10bを設けた
点にある。この放熱層10bはSiN,AlN等から成
り、少なくと電極形成領域をカバーしている。他の構成
及び接続方法は第1実施形態と同じであるため同一符号
を用いその説明を省略する。
[Fifth Embodiment] FIGS. 10 and 11 relate to a fifth embodiment of the present invention. This embodiment is different from the first embodiment in that a substrate 10 and its electrode 10a are located between the substrate 10 and its electrode 10a. And a heat radiation layer 10b having excellent insulation and heat conductivity. The heat radiation layer 10b is made of SiN, AlN, or the like, and covers at least the electrode formation region. The other configuration and connection method are the same as those of the first embodiment, and therefore the same reference numerals are used and the description is omitted.

【0032】本実施形態によれば、部品接続時の熱を放
熱層10bを利用して効果的に放熱して、電子部品1及
び基板3等が受ける熱的及び機械的ダメージをより一層
軽減することができる。他の作用,効果は第1実施形態
と同様である。
According to the present embodiment, the heat at the time of connecting the components is effectively radiated by using the heat radiation layer 10b, thereby further reducing the thermal and mechanical damage to the electronic component 1, the substrate 3, and the like. be able to. Other operations and effects are the same as those of the first embodiment.

【0033】以上、上述の各実施形態では、電子部品と
してIC,LSI等を例示したが、各実施形態で説明し
た接続方法は、チップコンデンサ,チップインダクタ,
チップ抵抗器等のチップ状電子部品やこれ以外の電子部
品にも幅広く適用でき、同様の作用,効果を得ることが
できる。
As described above, in each of the above embodiments, an IC, an LSI, or the like is exemplified as an electronic component. However, the connection method described in each embodiment is applied to a chip capacitor, a chip inductor,
The present invention can be widely applied to chip-shaped electronic components such as a chip resistor and other electronic components, and the same operation and effect can be obtained.

【0034】また、レーザ光線を基板を通じて接続部分
に照射するものを例示したが、レーザ光線を基板を透過
させずに接続部分の側方からバンプに対し直接照射する
ようにしても同様の部品接続を行うことができる。
Although the laser beam is applied to the connection portion through the substrate as an example, the same component connection may be performed by directly irradiating the bump from the side of the connection portion without transmitting the laser beam through the substrate. It can be performed.

【0035】さらに、部品接続用の熱源としてレーザ光
線を用いたものを例示したが、レーザ光線の代わりに電
磁波、例えば赤外線等の熱放射線やマイクロ波等の電波
を接続部分に照射するようにしても該照射エネルギーに
よって部品接続を同様に行うことができる。
Further, a laser beam is used as an example of a heat source for connecting components. However, instead of the laser beam, electromagnetic waves, for example, heat radiation such as infrared rays or radio waves such as microwaves are applied to the connection portion. Also, the component connection can be similarly performed by the irradiation energy.

【0036】[0036]

【発明の効果】以上詳述したように、請求項1の発明に
よれば、接合材に向けてレーザ光線または電磁波を照射
しているので、照射時における温度上昇を部分的なもの
に止めて、電子部品全体及び基板全体の温度が常温域か
ら高温域まで急激に上昇することを防止し、電子部品及
び基板が受ける熱的ダメージを軽減することができる。
しかも、基板全体の温度が上昇することがないので、電
子部品と基板とに熱膨張係数の違いがあってもこれを原
因として発生する応力を低減し、電子部品及び基板と両
者の接続部分が受ける機械的ダメージを軽減することが
できる。また、上記レーザ光線または電磁波の照射と同
時に、接合材に熱と超音波振動の何れか一方を付与して
いるので、部品接続に必要な熱エネルギーをこれら熱及
び超音波振動、または熱と超音波振動と熱の一方により
補って、部品接続時間を短縮することができ、この部品
接続時間の短縮によって上記の熱的及び機械的ダメージ
をより一層軽減することができる。
As described above in detail, according to the first aspect of the present invention, since the joining member is irradiated with the laser beam or the electromagnetic wave, the temperature rise at the time of irradiation is limited to a partial one. In addition, it is possible to prevent the temperature of the entire electronic component and the entire substrate from suddenly rising from a normal temperature range to a high temperature range, and to reduce thermal damage to the electronic component and the substrate.
In addition, since the temperature of the entire substrate does not rise, even if there is a difference in the coefficient of thermal expansion between the electronic component and the substrate, the stress generated due to this difference is reduced, and the connection between the electronic component and the substrate and the connection between them is reduced. The received mechanical damage can be reduced. In addition, since either the heat or the ultrasonic vibration is applied to the bonding material simultaneously with the irradiation of the laser beam or the electromagnetic wave, the heat energy required for connecting the components is subjected to the heat and the ultrasonic vibration, or the heat and the ultrasonic vibration. The component connection time can be shortened by supplementing with one of the acoustic wave vibration and the heat, and the above-mentioned thermal and mechanical damage can be further reduced by shortening the component connection time.

【0037】請求項2の発明によれば、電子部品を基板
に載置する前に、接合材に向けてレーザ光線または電磁
波を照射しているので、部品載置後にレーザ光線または
電磁波を照射する場合に比べて電子部品に余計な熱が伝
わらない利点がある。他の効果は請求項1の発明と同様
である。
According to the second aspect of the present invention, since the laser beam or the electromagnetic wave is applied to the bonding material before the electronic component is mounted on the substrate, the laser beam or the electromagnetic wave is applied after the mounting of the component. There is an advantage that unnecessary heat is not transmitted to the electronic components as compared with the case. Other effects are the same as those of the first aspect.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施形態に係る電子部品と基板の
側面図
FIG. 1 is a side view of an electronic component and a substrate according to a first embodiment of the present invention.

【図2】本発明の第1実施形態に係る接続手順を示す図FIG. 2 is a diagram showing a connection procedure according to the first embodiment of the present invention.

【図3】本発明の第2実施形態に係る電子部品と基板の
側面図
FIG. 3 is a side view of an electronic component and a substrate according to a second embodiment of the present invention.

【図4】本発明の第2実施形態に係る接続手順を示す図FIG. 4 is a diagram showing a connection procedure according to a second embodiment of the present invention.

【図5】本発明の第3実施形態に係る電子部品と基板の
側面図
FIG. 5 is a side view of an electronic component and a substrate according to a third embodiment of the present invention.

【図6】本発明の第3実施形態に係る接続手順を示す図FIG. 6 is a diagram showing a connection procedure according to a third embodiment of the present invention.

【図7】本発明の第3実施形態に係る接続手順を示す図FIG. 7 is a diagram showing a connection procedure according to a third embodiment of the present invention.

【図8】本発明の第4実施形態に係る電子部品と基板の
側面図
FIG. 8 is a side view of an electronic component and a substrate according to a fourth embodiment of the present invention.

【図9】本発明の第4実施形態に係る接続手順を示す図FIG. 9 is a diagram showing a connection procedure according to a fourth embodiment of the present invention.

【図10】本発明の第5実施形態に係る電子部品と基板
の側面図
FIG. 10 is a side view of an electronic component and a substrate according to a fifth embodiment of the present invention.

【図11】本発明の第5実施形態に係る接続手順を示す
FIG. 11 is a diagram showing a connection procedure according to a fifth embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…電子部品、1a…電極、2…バンプ、3…基板、3
a…電極、4…コレット、5…電熱ヒータ、6…超音波
振動器、LB…レーザ光線、Le…集光レンズ、7…バ
ンプ、8,9…接合材、10…基板、10a…電極、1
0b…放熱層。
DESCRIPTION OF SYMBOLS 1 ... Electronic component, 1a ... Electrode, 2 ... Bump, 3 ... Substrate, 3
a: electrode, 4: collet, 5: electric heater, 6: ultrasonic vibrator, LB: laser beam, Le: condenser lens, 7: bump, 8, 9: bonding material, 10: substrate, 10a: electrode, 1
0b: heat dissipation layer.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤井 知徳 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 上野 光生 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 藤川 巌 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 渋谷 和行 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Tomonori Fujii 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Electric Power Co., Inc. (72) Mitsuo Ueno 6-16-20 Ueno, Taito-ku, Tokyo Taiyo (72) Inventor Iwao Fujikawa 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Induction Co., Ltd. (72) Inventor Kazuyuki Shibuya 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Induction Den Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 電子部品と基板とを電気的に接続する回
路モジュールの製造方法において、 部品電極と基板電極の一方に接合材を設け、 電子部品を基板に載置した状態で、接合材に向けてレー
ザ光線または電磁波を照射すると同時に、該接合材に熱
と超音波振動の少なくとも一方を付与する、ことを特徴
とする回路モジュールの製造方法。
In a method of manufacturing a circuit module for electrically connecting an electronic component and a substrate, a bonding material is provided on one of the component electrode and the substrate electrode. A method for manufacturing a circuit module, comprising irradiating a laser beam or an electromagnetic wave toward the bonding member and simultaneously applying at least one of heat and ultrasonic vibration to the bonding material.
【請求項2】 電子部品と基板とを電気的に接続する回
路モジュールの製造方法において、 基板電極に接合材を設け、 接合材に向けてレーザ光線または電磁波を照射した後
に、電子部品を基板に載置し、接合材に熱と超音波振動
の少なくとも一方を付与する、 ことを特徴とする回路モジュールの製造方法。
2. A method of manufacturing a circuit module for electrically connecting an electronic component and a substrate, comprising: providing a bonding material to a substrate electrode; irradiating the bonding material with a laser beam or an electromagnetic wave; A method for manufacturing a circuit module, comprising: mounting and applying at least one of heat and ultrasonic vibration to a bonding material.
【請求項3】 接合材として電極よりも塑性変形し易い
ものを用いた、 ことを特徴とする請求項1または2記載の回路モジュー
ルの製造方法。
3. The method for manufacturing a circuit module according to claim 1, wherein a bonding material that is more easily plastically deformed than an electrode is used.
【請求項4】 基板の電極下側に放熱層を設けた、 ことを特徴とする請求項1乃至3の何れか1項記載の回
路モジュールの製造方法。
4. The method for manufacturing a circuit module according to claim 1, wherein a heat radiation layer is provided below the electrodes of the substrate.
JP35069096A 1996-12-27 1996-12-27 Manufacture of circuit module Withdrawn JPH10190209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35069096A JPH10190209A (en) 1996-12-27 1996-12-27 Manufacture of circuit module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35069096A JPH10190209A (en) 1996-12-27 1996-12-27 Manufacture of circuit module

Publications (1)

Publication Number Publication Date
JPH10190209A true JPH10190209A (en) 1998-07-21

Family

ID=18412188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35069096A Withdrawn JPH10190209A (en) 1996-12-27 1996-12-27 Manufacture of circuit module

Country Status (1)

Country Link
JP (1) JPH10190209A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152393A (en) * 2002-10-30 2004-05-27 Toshiba Corp Arm assembly, storage device provided with the arm assembly, and manufacturing method for storage device
JP2007073661A (en) * 2005-09-06 2007-03-22 Fujifilm Corp Laser soldering method and laser soldering device
JP2009194035A (en) * 2008-02-12 2009-08-27 Ricoh Microelectronics Co Ltd Wiring board, electronic circuit board, wiring board manufacturing method, and electronic circuit board manufacturing method
CN102151928A (en) * 2010-01-08 2011-08-17 先进装配系统有限责任两合公司 Device for thermally connecting components to a substrate, pick-and-place machine and method
WO2018141568A1 (en) * 2017-02-02 2018-08-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Method for joining components on a support structure using electromagnetic radiation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152393A (en) * 2002-10-30 2004-05-27 Toshiba Corp Arm assembly, storage device provided with the arm assembly, and manufacturing method for storage device
JP2007073661A (en) * 2005-09-06 2007-03-22 Fujifilm Corp Laser soldering method and laser soldering device
JP2009194035A (en) * 2008-02-12 2009-08-27 Ricoh Microelectronics Co Ltd Wiring board, electronic circuit board, wiring board manufacturing method, and electronic circuit board manufacturing method
CN102151928A (en) * 2010-01-08 2011-08-17 先进装配系统有限责任两合公司 Device for thermally connecting components to a substrate, pick-and-place machine and method
WO2018141568A1 (en) * 2017-02-02 2018-08-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Method for joining components on a support structure using electromagnetic radiation

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