JPH10209569A - ｐ型窒化物半導体装置とその製造方法 - Google Patents

ｐ型窒化物半導体装置とその製造方法

Info

Publication number
JPH10209569A
JPH10209569A JP533997A JP533997A JPH10209569A JP H10209569 A JPH10209569 A JP H10209569A JP 533997 A JP533997 A JP 533997A JP 533997 A JP533997 A JP 533997A JP H10209569 A JPH10209569 A JP H10209569A
Authority
JP
Japan
Prior art keywords
group
nitride semiconductor
type nitride
intermediate layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP533997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10209569A5 (enExample
Inventor
Kazu Kaneko
和 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Priority to JP533997A priority Critical patent/JPH10209569A/ja
Priority to US09/003,259 priority patent/US6150672A/en
Priority to EP98300306A priority patent/EP0854524A3/en
Publication of JPH10209569A publication Critical patent/JPH10209569A/ja
Priority to US09/562,494 priority patent/US6238945B1/en
Publication of JPH10209569A5 publication Critical patent/JPH10209569A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP533997A 1997-01-16 1997-01-16 ｐ型窒化物半導体装置とその製造方法 Pending JPH10209569A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP533997A JPH10209569A (ja) 1997-01-16 1997-01-16 ｐ型窒化物半導体装置とその製造方法
US09/003,259 US6150672A (en) 1997-01-16 1998-01-06 P-type group III-nitride semiconductor device
EP98300306A EP0854524A3 (en) 1997-01-16 1998-01-16 Nitride semi-conductor device and method of manufacture
US09/562,494 US6238945B1 (en) 1997-01-16 2000-05-01 Method of making P-type group III-nitride semiconductor device having improved P contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP533997A JPH10209569A (ja) 1997-01-16 1997-01-16 ｐ型窒化物半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JPH10209569A true JPH10209569A (ja) 1998-08-07
JPH10209569A5 JPH10209569A5 (enExample) 2004-11-18

Family

ID=11608478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP533997A Pending JPH10209569A (ja) 1997-01-16 1997-01-16 ｐ型窒化物半導体装置とその製造方法

Country Status (3)

Country Link
US (2) US6150672A (enExample)
EP (1) EP0854524A3 (enExample)
JP (1) JPH10209569A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012757A (ja) * 2005-06-29 2007-01-18 Toyoda Gosei Co Ltd 半導体デバイス、及びその電極の製造方法
JP2019009169A (ja) * 2017-06-21 2019-01-17 国立研究開発法人情報通信研究機構 半導体光デバイス、半導体光源、光集積回路、及び半導体光デバイスの製造方法

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209569A (ja) * 1997-01-16 1998-08-07 Hewlett Packard Co <Hp> ｐ型窒化物半導体装置とその製造方法
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
KR100308921B1 (ko) * 1999-03-17 2001-09-26 김효근 ｐ형 ＧａＮ계 반도체의 낮은 오믹 접촉 저항 형성을 위한 Ｅｐｉ구조 및 낮은 오믹접촉 저항 형성을 위한 Ｅｐｉ 구조 성장방법
JP3609661B2 (ja) * 1999-08-19 2005-01-12 株式会社東芝 半導体発光素子
JP4315583B2 (ja) * 2000-09-19 2009-08-19 パイオニア株式会社 Ｉｉｉ族窒化物系半導体レーザ素子
US6541799B2 (en) * 2001-02-20 2003-04-01 Showa Denko K.K. Group-III nitride semiconductor light-emitting diode
JP2002289955A (ja) * 2001-03-23 2002-10-04 Sharp Corp 半導体レーザ素子とその製造方法および光学式情報再生装置
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US20030015708A1 (en) * 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
KR100882977B1 (ko) * 2003-03-03 2009-02-12 엘지전자 주식회사 발광 소자 제조 방법
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4639107B2 (ja) * 2005-03-31 2011-02-23 富士通株式会社 半導体レーザ及びその製造方法
US20060262243A1 (en) * 2005-05-19 2006-11-23 Lester Steven D Display system and method using a solid state laser
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US8519437B2 (en) * 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
EP2262012B1 (en) * 2008-04-02 2017-12-27 LG Innotek Co., Ltd. Light-emitting diode and a method of manufacturing thereof
US9287469B2 (en) * 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
KR100969131B1 (ko) * 2010-03-05 2010-07-07 엘지이노텍 주식회사 발광 소자 제조방법
US8557693B2 (en) 2010-06-03 2013-10-15 International Business Machines Corporation Contact resistivity reduction in transistor devices by deep level impurity formation
WO2012016377A1 (en) * 2010-08-03 2012-02-09 Industrial Technology Research Institute Light emitting diode chip, light emitting diode package structure, and method for forming the same
US8779412B2 (en) * 2011-07-20 2014-07-15 Samsung Electronics Co., Ltd. Semiconductor light emitting device
WO2013077954A1 (en) 2011-11-23 2013-05-30 Acorn Technologies, Inc. Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (en) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5693963A (en) * 1994-09-19 1997-12-02 Kabushiki Kaisha Toshiba Compound semiconductor device with nitride
JP2666237B2 (ja) * 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
JP3605906B2 (ja) * 1994-10-28 2004-12-22 三菱化学株式会社 コンタクト抵抗低減層を有する半導体装置
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
JP3457468B2 (ja) * 1995-09-12 2003-10-20 株式会社東芝 多層構造半導体装置
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
JPH10209569A (ja) * 1997-01-16 1998-08-07 Hewlett Packard Co <Hp> ｐ型窒化物半導体装置とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012757A (ja) * 2005-06-29 2007-01-18 Toyoda Gosei Co Ltd 半導体デバイス、及びその電極の製造方法
JP2019009169A (ja) * 2017-06-21 2019-01-17 国立研究開発法人情報通信研究機構 半導体光デバイス、半導体光源、光集積回路、及び半導体光デバイスの製造方法

Also Published As

Publication number Publication date
EP0854524A3 (en) 1998-12-16
US6150672A (en) 2000-11-21
US6238945B1 (en) 2001-05-29
EP0854524A2 (en) 1998-07-22

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