JPH10125726A - Substrate and its connection - Google Patents

Substrate and its connection

Info

Publication number
JPH10125726A
JPH10125726A JP8277908A JP27790896A JPH10125726A JP H10125726 A JPH10125726 A JP H10125726A JP 8277908 A JP8277908 A JP 8277908A JP 27790896 A JP27790896 A JP 27790896A JP H10125726 A JPH10125726 A JP H10125726A
Authority
JP
Japan
Prior art keywords
bump
substrate
terminal electrode
electrode portion
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8277908A
Other languages
Japanese (ja)
Inventor
Koichi Oka
幸一 岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP8277908A priority Critical patent/JPH10125726A/en
Publication of JPH10125726A publication Critical patent/JPH10125726A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

Landscapes

  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a substrate which can beforehand prevent breaking of a connection part caused by a concentrated stress, by shaping connected bumps reliably into such a predetermined configuration as to avoid any concentrated stress, and also to provide a method for connecting the substrate. SOLUTION: First, as shown in the drawing (A), an IC chip 10 having terminal electrode parts 11 and columnar bumps 12C of solder formed on the electrode parts 11 is positioned above terminal electrode parts 18 of a circuit substrate 16 with the side of the bumps 12C facing down, the bumps 12C are heated to be melted by reflow, the entire IC chip 10 is moved in an arrowed direction 30 until the surface of a protective film 14 covering a terminal electrode 11 side of the chip 10 come into contact with the surface of a protective film 20 on the circuit substrate 16, and then the bumps 12C are cooled and fixedly set. As a result, as shown in the drawing (B), the bumps 12C are changed to drum-shaped bumps 12D having the same shape as openings 22 made in the protective film 20.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は基板及び基板の接続
方法に関するものであり、特に、接続時にバンプの形状
を整形することができる半導体チップや回路基板等の基
板及び基板の接続方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate and a method for connecting the substrates, and more particularly, to a substrate such as a semiconductor chip or a circuit substrate capable of shaping the shape of a bump at the time of connection and a method for connecting the substrates. is there.

【0002】[0002]

【従来の技術】従来、ICチップの端子電極部上に形成
したバンプと回路基板の端子電極部との接続は図4
(A)に示すように、端子電極部11側の表面に保護膜
14が形成されたICチップ10の端子電極部11上に
形成されたバンプ12Aを相対する回路基板16の端子
電極部18上方に位置合わせした後にバンプ12Aを加
熱しながらICチップ10全体を矢印34方向に移動す
ることによりバンプ12Aと回路基板16の端子電極部
18を接触させ、バンプ12Aを冷却、固着させること
によるか、予め端子電極部18上に載置したバンプ12
Aを加熱溶融させることによって行っていた。
2. Description of the Related Art Conventionally, connection between a bump formed on a terminal electrode portion of an IC chip and a terminal electrode portion of a circuit board is shown in FIG.
As shown in (A), the bump 12A formed on the terminal electrode portion 11 of the IC chip 10 having the protective film 14 formed on the surface on the side of the terminal electrode portion 11 is located above the terminal electrode portion 18 of the circuit board 16 opposite to the bump 12A. By moving the entire IC chip 10 in the direction of the arrow 34 while heating the bump 12A after the alignment, the bump 12A is brought into contact with the terminal electrode portion 18 of the circuit board 16, and the bump 12A is cooled and fixed. Bump 12 previously mounted on terminal electrode portion 18
A was performed by heating and melting A.

【0003】しかしながら以上のような方法では、接続
後のバンプ12Bは図4(B)に示すように中央部の径
が両端部の径より太くなった形状、すなわち太鼓状とな
り、両端部に応力集中が起こることによって接続部が破
断しやすいという問題点があった。
However, according to the above-described method, the bump 12B after connection has a shape in which the diameter at the center is larger than the diameter at both ends as shown in FIG. There is a problem that the connection portion is easily broken due to concentration.

【0004】このような問題点を解決するために特開平
5−144874号公報には、バンプを加熱溶融して相
対する回路基板の端子電極部に接続させると同時にIC
チップを所定距離だけ上昇させることにより、バンプの
形状を中央部の径が両端部の径より細くなった鼓状とす
る方法が記載されている。
In order to solve such a problem, Japanese Patent Application Laid-Open No. Hei 5-144874 discloses a method in which a bump is heated and melted so that the bump is connected to a terminal electrode portion of an opposing circuit board and, at the same time, an IC is formed.
A method is described in which the shape of the bump is made into a drum shape in which the diameter at the center is smaller than the diameter at both ends by raising the chip by a predetermined distance.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記従
来技術では、ICチップを所定距離上昇させることによ
りバンプの表面張力を利用してバンプを鼓状にしている
ため、中央部の径を所望の径にすることが難しいという
問題点があった。また、接続方法がリフローのみに限定
されるという問題点があった。
However, in the above-mentioned prior art, the bump is shaped like a drum using the surface tension of the bump by raising the IC chip by a predetermined distance. There was a problem that it was difficult to do. Further, there is a problem that the connection method is limited to only the reflow.

【0006】本発明は上記問題点を解消するために成さ
れたもので、接続方法がリフロー及び熱圧着の何れの場
合でも接続後のバンプの形状を確実に所定形状に整形す
ることができ、所定形状を応力集中が起こらない形状に
することにより、応力集中に起因する接続部の破断を未
然に防止することができる基板及び基板の接続方法を提
供することを目的としている。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and the shape of a bump after connection can be surely shaped into a predetermined shape regardless of the connection method of reflow and thermocompression bonding. It is an object of the present invention to provide a substrate and a method of connecting substrates that can prevent a connection portion from being broken due to stress concentration by setting a predetermined shape to a shape in which stress concentration does not occur.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に請求項1記載の基板は、端子電極部上に形成されたバ
ンプを有する基板と接続可能でかつ端子電極部を有する
基板であって、接続後のバンプ形状が所定形状になるよ
うに、前記端子電極部と他の基板の端子電極部上に形成
されたバンプとの接続の際に前記バンプを所定形状に整
形するための開孔部が前記端子電極部上に設けられた保
護膜を表面に形成したものである。
According to a first aspect of the present invention, there is provided a substrate which is connectable to a substrate having a bump formed on a terminal electrode portion and has a terminal electrode portion. An opening for shaping the bump into a predetermined shape when connecting the terminal electrode portion to a bump formed on the terminal electrode portion of another substrate so that the bump shape after connection becomes a predetermined shape. The part is formed on the surface with a protective film provided on the terminal electrode part.

【0008】請求項1記載の基板によれば、端子電極部
上にバンプが形成された他の基板との接続後のバンプを
所定形状に整形する開孔部が基板表面の保護膜に設けら
れている。従って、所定形状を応力集中が起こりにくい
形状とすることにより、バンプを開孔部の形状と同一の
応力集中が起こりにくい形状に確実に整形することがで
き、接続後の応力集中に起因する接続部の破断を未然に
防止することができる。
According to the first aspect of the present invention, the protective film on the surface of the substrate is provided with an opening for shaping the bump into a predetermined shape after connection with another substrate having the bump formed on the terminal electrode portion. ing. Accordingly, by making the predetermined shape a shape in which stress concentration is unlikely to occur, it is possible to reliably shape the bump into a shape in which the same stress concentration as the shape of the opening is unlikely to occur, and the connection caused by the stress concentration after the connection is made. Breakage of the portion can be prevented beforehand.

【0009】請求項2記載の基板は、端子電極部を有す
る基板と接続可能でかつ端子電極部上に形成されたバン
プを有する基板であって、接続後のバンプ形状が所定形
状になるように、前記バンプと他の基板の端子電極部と
の接続の際に前記バンプを所定形状に整形するための開
孔部が前記バンプを取り囲むように前記端子電極部上に
設けられた保護膜を表面に形成したものである。
A substrate according to a second aspect of the present invention is a substrate connectable to a substrate having a terminal electrode portion and having a bump formed on the terminal electrode portion, so that the bump shape after connection becomes a predetermined shape. An opening for shaping the bump into a predetermined shape at the time of connection between the bump and the terminal electrode of another substrate has a protective film provided on the terminal electrode so that the opening surrounds the bump. It is formed in.

【0010】請求項2記載の基板によれば、他の基板の
端子電極部との接続後のバンプを所定形状に整形する開
孔部が、バンプを取り囲むように基板表面の保護膜に設
けられている。従って、所定形状を応力集中が起こりに
くい形状とすることにより、バンプを開孔部の形状と同
一の応力集中が起こりにくい形状に確実に整形すること
ができ、接続後の応力集中に起因する接続部の破断を未
然に防止することができる。
According to the second aspect of the present invention, the opening for shaping the bump into a predetermined shape after connection with the terminal electrode portion of another substrate is provided in the protective film on the substrate surface so as to surround the bump. ing. Accordingly, by making the predetermined shape a shape in which stress concentration is unlikely to occur, it is possible to reliably shape the bump into a shape in which the same stress concentration as the shape of the opening is unlikely to occur, and the connection caused by the stress concentration after the connection is made. Breakage of the portion can be prevented beforehand.

【0011】請求項3記載の基板の接続方法は、第一基
板の端子電極部上に形成されたバンプと第二基板の端子
電極部とを接続する基板の接続方法において、接続後の
バンプ形状が所定形状になるように、前記バンプと前記
第二基板の端子電極部との接続の際に前記バンプを所定
形状に整形するための開孔部が端子電極部上に設けた保
護膜を前記第一基板及び前記第二基板の何れか一方の表
面に形成し、前記バンプをリフローまたは熱圧着により
前記第二基板の端子電極部と接続することを特徴として
いる。
According to a third aspect of the present invention, in the method of connecting a substrate for connecting a bump formed on a terminal electrode portion of a first substrate and a terminal electrode portion of a second substrate, the bump shape after the connection is formed. The protective film provided on the terminal electrode portion has an opening for shaping the bump into a predetermined shape when the bump is connected to the terminal electrode portion of the second substrate so that the bump has a predetermined shape. The bump is formed on one of the surfaces of the first substrate and the second substrate, and the bump is connected to a terminal electrode portion of the second substrate by reflow or thermocompression bonding.

【0012】請求項3記載の基板の接続方法によれば、
第一基板の端子電極部上に形成されたバンプと第二基板
の端子電極部とをリフローまたは熱圧着により接続する
際に、第一基板及び第二基板の何れか一方の表面に形成
されている保護膜の端子電極部上の開孔部により、第一
基板の端子電極部上に形成されているバンプは所定形状
に整形される。従って、所定形状を応力集中が起こりに
くい形状とすることにより、バンプを開孔部の形状と同
一の応力集中が起こりにくい形状に確実に整形すること
ができ、接続後の応力集中に起因する接続部の破断を未
然に防止することができる。
According to a third aspect of the present invention, there is provided a method of connecting a substrate.
When the bump formed on the terminal electrode portion of the first substrate and the terminal electrode portion of the second substrate are connected by reflow or thermocompression bonding, the bump is formed on one of the surfaces of the first substrate and the second substrate. The bump formed on the terminal electrode portion of the first substrate is shaped into a predetermined shape by the opening on the terminal electrode portion of the protective film. Accordingly, by making the predetermined shape a shape in which stress concentration is unlikely to occur, it is possible to reliably shape the bump into a shape in which the same stress concentration as the shape of the opening is unlikely to occur, and the connection caused by the stress concentration after the connection is made. Breakage of the portion can be prevented beforehand.

【0013】なお、本発明における基板には、プリント
配線基板等の回路基板の他に、回路及び端子電極部を有
するICチップやバンプを有するICパッケージ等が含
まれる。従って、請求項1及び請求項2の発明における
基板、請求項3の発明における第一基板及び第二基板は
各々回路基板、半導体チップ、ICパッケージ等の何れ
であってもよく、請求項3に記載の基板の接続方法は、
ICパッケージ等を含む回路基板と半導体チップの接
続、ICパッケージ等を含む回路基板同士の接続及び半
導体チップ同士の接続に対して適用することができる。
The substrate according to the present invention includes, in addition to a circuit board such as a printed wiring board, an IC chip having circuits and terminal electrodes, an IC package having bumps, and the like. Therefore, the substrate according to the first and second aspects of the invention, and the first substrate and the second substrate according to the third aspect of the invention may be any of a circuit board, a semiconductor chip, an IC package, and the like. The connection method of the board described is
The present invention can be applied to connection between a circuit board including an IC package and a semiconductor chip, connection between circuit boards including an IC package and the like, and connection between semiconductor chips.

【0014】[0014]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

[第1実施形態]以下、図面を参照しながら本発明に係
る基板及び基板の接続方法を詳細に説明する。
[First Embodiment] Hereinafter, a substrate and a method for connecting the substrates according to the present invention will be described in detail with reference to the drawings.

【0015】まず、図1(A)、(B)に基づいて、本
発明の第1実施形態における基板としての回路基板とI
Cチップとの接続方法を説明する。
First, based on FIGS. 1 (A) and 1 (B), a circuit board as a board according to a first embodiment of the present invention and I
A method for connecting to the C chip will be described.

【0016】本実施形態に係る回路基板16は、図1
(A)に示すように端子電極部18側の表面に端子電極
部18上の略中央部分に端子電極部18上面に対する垂
直方向中央部の径が両端部の径より細くなった鼓状の開
孔部22を設けたレジスト等の保護膜20を有してい
る。
The circuit board 16 according to the present embodiment has a structure shown in FIG.
As shown in FIG. 4A, a drum-shaped opening is formed on the surface on the side of the terminal electrode portion 18 at a substantially central portion on the terminal electrode portion 18 in which the diameter of the central portion in the vertical direction with respect to the upper surface of the terminal electrode portion 18 is smaller than the diameter of both ends. A protective film 20 such as a resist having a hole 22 is provided.

【0017】なお、鼓状の開孔部22は次の工程により
形成される。まず、図3(A)に示すように、回路基板
16の端子電極部18側の表面に開孔部22の半分の高
さに一致する厚さに異方性エッチング樹脂50を塗布
し、さらに異方性エッチング樹脂50の表面にマスク5
2を載置した後にエッチングを行なう。なお、マスク5
2にはマスク開孔部52Aが設けられており、端子電極
部18表面の略鉛直上方の面のみがマスクされるように
マスク52は載置される。以上のエッチングの結果、異
方性エッチング樹脂50における図3(B)の斜線部分
が除去され、端子電極部18の表面上に開孔部22の下
半分と同一形状の樹脂残部50Aが残る。なお、エッチ
ングの際のエッチングレートを調整することにより樹脂
残部50Aの傾斜部分の傾斜の大きさを調整することが
できる。
The drum-shaped opening 22 is formed by the following steps. First, as shown in FIG. 3A, an anisotropic etching resin 50 is applied to the surface of the circuit board 16 on the side of the terminal electrode portion 18 so as to have a thickness corresponding to half the height of the opening 22. Mask 5 on the surface of anisotropic etching resin 50
Etching is performed after placing No. 2. The mask 5
2 is provided with a mask opening 52A, and the mask 52 is placed so that only the surface substantially vertically above the surface of the terminal electrode portion 18 is masked. As a result of the above-described etching, the hatched portion of FIG. 3B in the anisotropic etching resin 50 is removed, and a resin remaining portion 50 </ b> A having the same shape as the lower half of the opening 22 remains on the surface of the terminal electrode portion 18. In addition, the magnitude of the inclination of the inclined portion of the resin remaining portion 50A can be adjusted by adjusting the etching rate at the time of etching.

【0018】次に、図3(C)に示すように、回路基板
16の端子電極部18側の表面に保護膜20を開孔部2
2の高さと同一の厚さに塗布し、図3(D)に示すよう
に、保護膜20の表面にマスク54を載置した後にエッ
チングを行なう。なお、マスク54にはマスク開孔部5
4Aが設けられており、マスク開孔部54Aの中心が端
子電極部18の中心の略鉛直上方に位置するようにマス
ク54は載置される。以上のエッチングの結果、開孔部
22の上半分と同一形状である図3(E)の斜線部分に
示す保護膜除去部20Aが除去される。なお、エッチン
グレートを調整することにより、保護膜除去部20Aの
傾斜部分の傾斜の大きさを調整することができる。
Next, as shown in FIG. 3 (C), a protective film 20 is formed on the surface of the circuit board 16 on the side of the terminal electrode section 18 in the opening section 2.
2 and the etching is performed after the mask 54 is placed on the surface of the protective film 20 as shown in FIG. The mask 54 has a mask opening 5.
4A are provided, and the mask 54 is placed such that the center of the mask opening 54A is located substantially vertically above the center of the terminal electrode portion 18. As a result of the above-described etching, the protective film removing portion 20A shown in the hatched portion of FIG. By adjusting the etching rate, it is possible to adjust the magnitude of the inclination of the inclined portion of the protective film removing portion 20A.

【0019】最後に、樹脂残部50Aのみをエッチング
除去することにより、図3(F)に示す鼓状の開孔部2
2が形成される。
Finally, only the resin residue 50A is removed by etching, so that the drum-shaped opening 2 shown in FIG.
2 are formed.

【0020】この際、開孔部22は、その容積が相対す
るバンプ12Cの体積と同一となるように形成するのが
好ましい。
At this time, it is preferable that the opening 22 is formed so that the volume thereof is equal to the volume of the bump 12C opposed thereto.

【0021】以上のように形成された回路基板16とI
Cチップ10との接続方法を次に説明する。
The circuit board 16 formed as described above and I
Next, a method of connecting to the C chip 10 will be described.

【0022】まず、図1(A)に示すようにハンダによ
って構成された円柱状のバンプ12Cが端子電極部11
上に形成されたICチップ10をバンプ12C側を下向
きとして回路基板16の端子電極部18上方に位置決め
し、次にICチップ10全体を矢印30方向に移動させ
ると共にリフローによりバンプ12Cを加熱して溶融さ
せ、ICチップ10をICチップ10の端子電極部11
側の表面を覆っている保護膜14の表面と回路基板16
上の保護膜20の表面とが接触する位置まで移動して停
止させ、バンプ12Cを冷却して固着させる。
First, as shown in FIG. 1A, a columnar bump 12C made of solder is
The IC chip 10 formed thereon is positioned above the terminal electrode portion 18 of the circuit board 16 with the bump 12C side facing down, and then the entire IC chip 10 is moved in the direction of arrow 30 and the bump 12C is heated by reflow. The IC chip 10 is melted and the terminal electrode portion 11 of the IC chip 10 is melted.
Of the protective film 14 covering the side surface and the circuit board 16
The bump 12C is moved to a position where it comes into contact with the surface of the upper protective film 20 and stopped, and the bump 12C is cooled and fixed.

【0023】以上の接続方法でICチップ10と回路基
板16が接続された状態を図1(B)に示す。図1
(B)に示すように接続する際に加熱されることにより
溶融したバンプ12Cは、保護膜20に設けられた開孔
部22の形状に拘束されて接続後は開孔部22と同様の
形状、すなわち鼓状のバンプ12Dとなる。
FIG. 1B shows a state in which the IC chip 10 and the circuit board 16 are connected by the above connection method. FIG.
As shown in (B), the bump 12C melted by being heated at the time of connection is constrained by the shape of the opening 22 provided in the protective film 20 and has the same shape as the opening 22 after connection. That is, it becomes the drum-shaped bump 12D.

【0024】以上説明したように、本発明の第1実施形
態では、回路基板16上の保護膜20に鼓状の開孔部2
2を設けることにより、バンプ12Cと端子電極部18
とを接続する際に、バンプ12Cを応力集中が起こりに
くい鼓状に確実に整形することができるので、バンプ1
2Cと端子電極部18との接続後の応力集中に起因する
接続部の破断を未然に防止することができる。
As described above, according to the first embodiment of the present invention, the protective film 20 on the circuit board 16 has
2, the bump 12C and the terminal electrode portion 18 are provided.
When the bumps 12C are connected to each other, the bumps 12C can be reliably shaped into a drum shape in which stress concentration does not easily occur.
Breakage of the connection part due to stress concentration after the connection between the 2C and the terminal electrode part 18 can be prevented beforehand.

【0025】[第2実施形態]次に、図2に基づいて、
本発明の第2実施形態における回路基板と基板としての
ICチップとの接続方法を説明する。
[Second Embodiment] Next, based on FIG.
A method for connecting a circuit board and an IC chip as a board according to the second embodiment of the present invention will be described.

【0026】本第2実施形態に係るICチップ10は、
図2に示すように端子電極部11側の表面に端子電極部
11上の略中央部分に円柱状に形成されたバンプ12E
を取り囲むように鼓状の開孔部22Bを設けた保護膜1
4Bを有している。なお、保護膜14Bに設けられた開
孔部22Bは、第1実施形態における開孔部の形成工程
と同様の工程にて形成することができる。この際、開孔
部22Bは、その容積がバンプ12Eの体積と同一とな
るように形成するのが好ましい。
The IC chip 10 according to the second embodiment includes:
As shown in FIG. 2, a bump 12E formed in a columnar shape at a substantially central portion on the terminal electrode portion 11 on the surface on the terminal electrode portion 11 side.
Protective film 1 provided with a drum-shaped opening 22B so as to surround
4B. The opening 22B provided in the protective film 14B can be formed in the same step as the step of forming the opening in the first embodiment. At this time, it is preferable to form the opening 22B such that the volume thereof is equal to the volume of the bump 12E.

【0027】以上のように保護膜14Bが形成されたI
Cチップ10と回路基板16との接続方法を次に説明す
る。
As described above, the I on which the protective film 14B is formed
Next, a method of connecting the C chip 10 and the circuit board 16 will be described.

【0028】まず、ICチップ10をバンプ12E側を
下向きとしてバンプ12Eを回路基板16の端子電極部
18上方に位置決めし、次にICチップ10全体を矢印
32方向に移動させると共にリフローによりバンプ12
Eを加熱して溶融させ、ICチップ10をICチップ1
0の端子電極部11側の表面を覆っている保護膜14B
の表面と回路基板16上の保護膜20Bの表面とが接触
する位置まで移動して停止させ、バンプ12Eを冷却し
て固着させる。
First, the bump 12E is positioned above the terminal electrode portion 18 of the circuit board 16 with the IC chip 10 facing down on the bump 12E side, and then the entire IC chip 10 is moved in the direction of arrow 32 and the bump 12E is reflowed.
E is melted by heating, and the IC chip 10 is replaced with the IC chip 1
Protective film 14B covering the surface on the side of terminal electrode portion 11
Is moved to a position where the surface of the protective film 20B on the circuit board 16 comes into contact with the surface of the protective film 20B and is stopped, and the bump 12E is cooled and fixed.

【0029】以上の接続方法により、接続する際に加熱
されることにより溶融したバンプ12Eは、保護膜14
Bに設けられた開孔部22Bの形状に拘束されて接続後
は開孔部22Bと同様の形状、すなわち鼓状となる。
According to the connection method described above, the bump 12E melted by being heated at the time of connection is connected to the protective film 14
After being connected by being restrained by the shape of the opening 22B provided in B, the shape becomes the same as that of the opening 22B, that is, a drum shape after connection.

【0030】以上説明したように、本発明の第2実施形
態の基板及び基板の接続方法では、ICチップ10上の
保護膜14Bに鼓状の開孔部22Bを設けることによ
り、バンプ12Eと端子電極部18とを接続する際に、
バンプ12Eを応力集中が起こりにくい鼓状に確実に整
形することができるので、基板接続後の応力集中に起因
する接続部の破断を未然に防止することができる。
As described above, in the method of connecting a substrate to a substrate according to the second embodiment of the present invention, the bump 12E and the terminal are provided by providing the drum-shaped opening 22B in the protective film 14B on the IC chip 10. When connecting to the electrode part 18,
Since the bumps 12E can be surely shaped into a drum shape in which stress concentration is unlikely to occur, breakage of the connection portion due to stress concentration after connecting the substrate can be prevented.

【0031】なお、上記各実施形態では、リフローによ
りICチップの端子電極部上に形成されたバンプを溶融
して回路基板上の端子電極部と接続する場合について説
明したが、本発明はこれに限定されるものではなく、熱
圧着により接続するようにしてもよい。この場合は、金
(Au)、ハンダ等により構成したバンプを回路基板の
端子電極部上方に位置合わせした後、バンプをバンプ液
相点温度未満の温度に加熱して端子電極部に熱圧着す
る。この時、加熱されて軟化したバンプは、保護膜に形
成された鼓状の開孔部に拘束されて塑性変形を起こし、
鼓状のバンプとなる。
In each of the above embodiments, the case where the bumps formed on the terminal electrodes of the IC chip are melted by reflow and connected to the terminal electrodes on the circuit board has been described. The connection is not limited, and connection may be made by thermocompression bonding. In this case, after the bump made of gold (Au), solder, or the like is positioned above the terminal electrode portion of the circuit board, the bump is heated to a temperature lower than the bump liquidus temperature and thermocompression bonded to the terminal electrode portion. . At this time, the heated and softened bumps are restrained by the drum-shaped opening formed in the protective film and undergo plastic deformation.
It becomes a drum-shaped bump.

【0032】また、上記各実施形態では、保護膜に形成
する開孔部は、その容積がバンプの体積と同一となるよ
うに形成する場合について説明したが、本発明はこれに
限定されるものではなく、開孔部の容積はバンプの体積
以下であればよい。なお、開孔部の容積がバンプの体積
より小さい場合には、接続後にICチップの保護膜と回
路基板の保護膜との間に隙間ができるため、この隙間を
封止樹脂にて封止するとさらに信頼性を上げることがで
きる。
Further, in each of the above embodiments, the case where the opening portion formed in the protective film is formed so that the volume thereof is equal to the volume of the bump has been described. However, the present invention is not limited to this. Instead, the volume of the opening may be equal to or less than the volume of the bump. If the volume of the opening is smaller than the volume of the bump, a gap is formed between the protective film of the IC chip and the protective film of the circuit board after connection. Further, reliability can be improved.

【0033】また、上記各実施形態では、ICチップ側
の端子電極部上にバンプを形成して回路基板の端子電極
部と接続する場合について説明したが、本発明はこれに
限定されるものではなく、回路基板側の端子電極部上に
バンプを形成する場合においても同様の効果が得られ
る。
In each of the above embodiments, the case where bumps are formed on the terminal electrodes on the IC chip side and connected to the terminal electrodes on the circuit board has been described. However, the present invention is not limited to this. The same effect can be obtained when a bump is formed on the terminal electrode portion on the circuit board side.

【0034】また、上記各実施形態では、開孔部の形状
が鼓状である場合について説明したが、本発明はこれに
限定されるものではなく、応力集中が起こりにくい所定
の形状とすることができる。
In each of the above embodiments, the case where the shape of the opening is a drum shape has been described. However, the present invention is not limited to this. Can be.

【0035】また、上記各実施形態では、ICチップと
回路基板との接続を行う場合について説明したが、本発
明はこれに限定されるものではなく、バンプを含むIC
パッケージと基板の接続、ICチップ同士あるいはIC
パッケージを含む回路基板同士の接続においても適用す
ることができる。
In each of the above embodiments, the case where the connection between the IC chip and the circuit board is performed has been described. However, the present invention is not limited to this.
Connection between package and substrate, IC chips or IC
The present invention can be applied to connection between circuit boards including a package.

【0036】さらに、上記各実施形態では、バンプ形状
を円柱状としたが、本発明はこれに限定されるものでは
なく、球状バンプあるいはボールバンプ等についても適
用可能である。
Further, in each of the above embodiments, the bump shape is cylindrical, but the present invention is not limited to this. The present invention is also applicable to a spherical bump or a ball bump.

【0037】[0037]

【発明の効果】以上説明したように請求項1に記載の基
板は、端子電極部上にバンプが形成された他の基板との
接続後のバンプを所定形状に整形する開孔部が基板表面
の保護膜に設けられているので、所定形状を応力集中が
起こりにくい形状とすることにより、バンプを開孔部の
形状と同一の応力集中が起こりにくい形状に確実に整形
することができ、接続後の応力集中に起因する接続部の
破断を未然に防止することができる、という効果を有す
る。
As described above, in the substrate according to the first aspect, an opening for shaping a bump into a predetermined shape after connection with another substrate having a bump formed on a terminal electrode portion has a substrate surface. Since the protective film is provided on the protective film, the predetermined shape has a shape in which stress concentration is unlikely to occur, so that the bump can be surely shaped into a shape in which the same stress concentration as the opening portion does not easily occur. This has the effect that breakage of the connection portion due to subsequent stress concentration can be prevented.

【0038】また、請求項2に記載の基板は、他の基板
の端子電極部との接続後のバンプを所定形状に整形する
開孔部が、バンプを取り囲むように基板表面の保護膜に
設けられているので、所定形状を応力集中が起こりにく
い形状とすることにより、バンプを開孔部の形状と同一
の応力集中が起こりにくい形状に確実に整形することが
でき、接続後の応力集中に起因する接続部の破断を未然
に防止することができる、という効果を有する。
Further, in the substrate according to the second aspect, an opening for shaping a bump into a predetermined shape after connection with a terminal electrode portion of another substrate is provided in a protective film on the surface of the substrate so as to surround the bump. Therefore, by making the predetermined shape a shape in which stress concentration is unlikely to occur, it is possible to reliably shape the bump into a shape in which the same stress concentration as the shape of the opening does not easily occur, and to reduce the stress concentration after connection. This has the effect that breakage of the connection part due to the occurrence can be prevented beforehand.

【0039】さらに、請求項3に記載の基板の接続方法
は、第一基板の端子電極部上に形成されたバンプと第二
基板の端子電極部とをリフローまたは熱圧着により接続
する際に、第一基板及び第二基板の何れか一方の表面に
形成されている保護膜の端子電極部上の開孔部により、
第一基板の端子電極部上に形成されているバンプは所定
形状に整形されるので、所定形状を応力集中が起こりに
くい形状とすることにより、バンプを開孔部の形状と同
一の応力集中が起こりにくい形状に確実に整形すること
ができ、接続後の応力集中に起因する接続部の破断を未
然に防止することができる、という効果を有する。
Further, in the method of connecting a substrate according to the third aspect, when the bump formed on the terminal electrode portion of the first substrate and the terminal electrode portion of the second substrate are connected by reflow or thermocompression bonding, By the opening portion on the terminal electrode portion of the protective film formed on one surface of the first substrate and the second substrate,
Since the bump formed on the terminal electrode portion of the first substrate is shaped into a predetermined shape, by making the predetermined shape a shape in which stress concentration is unlikely to occur, the same stress concentration as the shape of the opening portion is formed in the bump. This has the effect that the shape can be reliably formed into a shape that is unlikely to occur, and the breakage of the connection portion due to the stress concentration after connection can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施形態における基板及び基板の
接続方法を示す概略側面図であり、(A)は接続前の状
態を示す図、(B)は接続後の状態を示す図である。
FIGS. 1A and 1B are schematic side views illustrating a substrate and a method of connecting the substrates according to the first embodiment of the present invention, wherein FIG. 1A illustrates a state before connection, and FIG. 1B illustrates a state after connection; is there.

【図2】本発明の第2実施形態における基板及び基板の
接続方法を示す概略側面図である。
FIG. 2 is a schematic side view illustrating a substrate and a method of connecting the substrates according to a second embodiment of the present invention.

【図3】保護膜に設けられた鼓状開孔部の形成工程を示
す概略側面図である。
FIG. 3 is a schematic side view showing a step of forming a drum-shaped opening provided in a protective film.

【図4】従来の基板及び基板の接続方法を示す概略側面
図であり、(A)は接続前の状態を示す図、(B)は接
続後の状態を示す図である。
4A and 4B are schematic side views illustrating a conventional method of connecting a substrate and a substrate, wherein FIG. 4A is a diagram illustrating a state before connection, and FIG. 4B is a diagram illustrating a state after connection.

【符号の説明】[Explanation of symbols]

10 ICチップ(基板) 11 端子電極部 12 バンプ 14 保護膜 16 回路基板(基板) 18 端子電極部 20 保護膜 22 開孔部 DESCRIPTION OF SYMBOLS 10 IC chip (substrate) 11 Terminal electrode part 12 Bump 14 Protective film 16 Circuit board (substrate) 18 Terminal electrode part 20 Protective film 22 Opening part

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 端子電極部上に形成されたバンプを有す
る基板と接続可能でかつ端子電極部を有する基板であっ
て、 接続後のバンプ形状が所定形状になるように、前記端子
電極部と他の基板の端子電極部上に形成されたバンプと
の接続の際に前記バンプを所定形状に整形するための開
孔部が前記端子電極部上に設けられた保護膜を表面に形
成した基板。
1. A substrate which is connectable to a substrate having a bump formed on a terminal electrode portion and has a terminal electrode portion, wherein the terminal electrode portion and the terminal electrode portion have a predetermined shape after connection. A substrate having an opening for shaping the bump into a predetermined shape at the time of connection with a bump formed on a terminal electrode portion of another substrate and having a protective film provided on the terminal electrode portion formed on the surface thereof. .
【請求項2】 端子電極部を有する基板と接続可能でか
つ端子電極部上に形成されたバンプを有する基板であっ
て、 接続後のバンプ形状が所定形状になるように、前記バン
プと他の基板の端子電極部との接続の際に前記バンプを
所定形状に整形するための開孔部が前記バンプを取り囲
むように前記端子電極部上に設けられた保護膜を表面に
形成した基板。
2. A substrate connectable to a substrate having a terminal electrode portion and having a bump formed on the terminal electrode portion, wherein the bump and the other bump are connected to each other so that the bump shape after connection becomes a predetermined shape. A substrate on a surface of which a protective film provided on the terminal electrode portion is formed such that an opening for shaping the bump into a predetermined shape at the time of connection with the terminal electrode portion of the substrate surrounds the bump.
【請求項3】 第一基板の端子電極部上に形成されたバ
ンプと第二基板の端子電極部とを接続する基板の接続方
法において、 接続後のバンプ形状が所定形状になるように、前記バン
プと前記第二基板の端子電極部との接続の際に前記バン
プを所定形状に整形するための開孔部が端子電極部上に
設けた保護膜を前記第一基板及び前記第二基板の何れか
一方の表面に形成し、前記バンプをリフローまたは熱圧
着により前記第二基板の端子電極部と接続することを特
徴とする基板の接続方法。
3. A method of connecting a substrate for connecting a bump formed on a terminal electrode portion of a first substrate and a terminal electrode portion of a second substrate, wherein the bump shape after connection is a predetermined shape. An opening for shaping the bump into a predetermined shape at the time of connection between the bump and the terminal electrode portion of the second substrate is provided with a protective film provided on the terminal electrode portion of the first substrate and the second substrate. A method of connecting a substrate, comprising forming the bump on one of the surfaces and connecting the bump to a terminal electrode portion of the second substrate by reflow or thermocompression bonding.
JP8277908A 1996-10-21 1996-10-21 Substrate and its connection Pending JPH10125726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8277908A JPH10125726A (en) 1996-10-21 1996-10-21 Substrate and its connection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8277908A JPH10125726A (en) 1996-10-21 1996-10-21 Substrate and its connection

Publications (1)

Publication Number Publication Date
JPH10125726A true JPH10125726A (en) 1998-05-15

Family

ID=17589978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8277908A Pending JPH10125726A (en) 1996-10-21 1996-10-21 Substrate and its connection

Country Status (1)

Country Link
JP (1) JPH10125726A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306897B1 (en) * 2001-10-29 2013-12-11 Fujitsu Limited Method of making electrode-to-electrode bond structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306897B1 (en) * 2001-10-29 2013-12-11 Fujitsu Limited Method of making electrode-to-electrode bond structure

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