JPH10125726A - Substrate and its connection - Google Patents

Substrate and its connection

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Publication number
JPH10125726A
JPH10125726A JP8277908A JP27790896A JPH10125726A JP H10125726 A JPH10125726 A JP H10125726A JP 8277908 A JP8277908 A JP 8277908A JP 27790896 A JP27790896 A JP 27790896A JP H10125726 A JPH10125726 A JP H10125726A
Authority
JP
Japan
Prior art keywords
substrate
terminal electrode
bumps
connection
electrode portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8277908A
Other languages
Japanese (ja)
Inventor
Koichi Oka
幸一 岡
Original Assignee
Fuji Xerox Co Ltd
富士ゼロックス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd, 富士ゼロックス株式会社 filed Critical Fuji Xerox Co Ltd
Priority to JP8277908A priority Critical patent/JPH10125726A/en
Publication of JPH10125726A publication Critical patent/JPH10125726A/en
Application status is Pending legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

Abstract

PROBLEM TO BE SOLVED: To provide a substrate which can beforehand prevent breaking of a connection part caused by a concentrated stress, by shaping connected bumps reliably into such a predetermined configuration as to avoid any concentrated stress, and also to provide a method for connecting the substrate.
SOLUTION: First, as shown in the drawing (A), an IC chip 10 having terminal electrode parts 11 and columnar bumps 12C of solder formed on the electrode parts 11 is positioned above terminal electrode parts 18 of a circuit substrate 16 with the side of the bumps 12C facing down, the bumps 12C are heated to be melted by reflow, the entire IC chip 10 is moved in an arrowed direction 30 until the surface of a protective film 14 covering a terminal electrode 11 side of the chip 10 come into contact with the surface of a protective film 20 on the circuit substrate 16, and then the bumps 12C are cooled and fixedly set. As a result, as shown in the drawing (B), the bumps 12C are changed to drum-shaped bumps 12D having the same shape as openings 22 made in the protective film 20.
COPYRIGHT: (C)1998,JPO

Description

【発明の詳細な説明】 BACKGROUND OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は基板及び基板の接続方法に関するものであり、特に、接続時にバンプの形状を整形することができる半導体チップや回路基板等の基板及び基板の接続方法に関するものである。 BACKGROUND OF THE INVENTION The present invention relates to a method of connecting a substrate and the substrate, in particular, relates to a substrate and a connection method of a substrate such as a semiconductor chip or a circuit board which can shape the shape of the bump at the time of connection is there.

【0002】 [0002]

【従来の技術】従来、ICチップの端子電極部上に形成したバンプと回路基板の端子電極部との接続は図4 Conventionally, the connection between the terminal electrode portions of the bumps and the circuit board formed on the terminal electrodes of the IC chip 4
(A)に示すように、端子電極部11側の表面に保護膜14が形成されたICチップ10の端子電極部11上に形成されたバンプ12Aを相対する回路基板16の端子電極部18上方に位置合わせした後にバンプ12Aを加熱しながらICチップ10全体を矢印34方向に移動することによりバンプ12Aと回路基板16の端子電極部18を接触させ、バンプ12Aを冷却、固着させることによるか、予め端子電極部18上に載置したバンプ12 (A), the terminal electrode portions 18 above the opposing bumps 12A formed on the terminal electrode portions 11 of the IC chips 10 which protected the surface layer 14 of the terminal electrode portion 11 side is formed a circuit board 16 contacting the terminal electrode portion 18 of the bump 12A and the circuit board 16 by moving the entire IC chip 10 in the arrow 34 direction while heating the bumps 12A after aligning in either a bump 12A cooling, due to be affixed, It bumps 12 which is placed on the pre-terminal electrode portions 18
Aを加熱溶融させることによって行っていた。 It has been performed by heating and melting the A.

【0003】しかしながら以上のような方法では、接続後のバンプ12Bは図4(B)に示すように中央部の径が両端部の径より太くなった形状、すなわち太鼓状となり、両端部に応力集中が起こることによって接続部が破断しやすいという問題点があった。 [0003] In however above manner, the bumps 12B after the connection shape the diameter of the central portion is thicker than the diameter of the both end portions as shown in FIG. 4 (B), i.e. becomes drum-shaped, the stress at both ends concentration connection portion is disadvantageously easily broken by what happens.

【0004】このような問題点を解決するために特開平5−144874号公報には、バンプを加熱溶融して相対する回路基板の端子電極部に接続させると同時にIC [0004] At the same time the Japanese Patent 5-144874 discloses to solve such a problem, when is connected to the terminal electrode portions of the opposing circuit board by heating and melting the bumps IC
チップを所定距離だけ上昇させることにより、バンプの形状を中央部の径が両端部の径より細くなった鼓状とする方法が記載されている。 By increasing the chip predetermined distance, a method for a drum-shaped to the shape of the bump diameter of the central portion is thinner than the diameter of the both end portions is described.

【0005】 [0005]

【発明が解決しようとする課題】しかしながら、上記従来技術では、ICチップを所定距離上昇させることによりバンプの表面張力を利用してバンプを鼓状にしているため、中央部の径を所望の径にすることが難しいという問題点があった。 [SUMMARY OF THE INVENTION However, in the conventional art, since the bumps drum-shaped by utilizing surface tension of the bump by causing the IC chip by a predetermined distance increases, the diameter of the central portion desired diameter that there has been a problem that it is difficult to. また、接続方法がリフローのみに限定されるという問題点があった。 Furthermore, the connection method has a problem that they are limited to reflow.

【0006】本発明は上記問題点を解消するために成されたもので、接続方法がリフロー及び熱圧着の何れの場合でも接続後のバンプの形状を確実に所定形状に整形することができ、所定形状を応力集中が起こらない形状にすることにより、応力集中に起因する接続部の破断を未然に防止することができる基板及び基板の接続方法を提供することを目的としている。 [0006] The present invention has been made in order to solve the above problem, the connection method can be shaped to ensure a predetermined shape the shape of the bumps after connection either case reflow and thermal compression, by the shape of the predetermined shape stress concentration does not occur, it is an object to provide a substrate and a connection method of a substrate which can prevent the breakage of the connecting portion due to stress concentration in advance.

【0007】 [0007]

【課題を解決するための手段】上記目的を達成するために請求項1記載の基板は、端子電極部上に形成されたバンプを有する基板と接続可能でかつ端子電極部を有する基板であって、接続後のバンプ形状が所定形状になるように、前記端子電極部と他の基板の端子電極部上に形成されたバンプとの接続の際に前記バンプを所定形状に整形するための開孔部が前記端子電極部上に設けられた保護膜を表面に形成したものである。 Substrate of claim 1, wherein in order to achieve the above object In order to achieve the above, a substrate having a and terminal electrode portion connectable to a substrate having a bump formed on the terminal electrode portion as the bump shape after the connection is made in a predetermined shape, said apertures for shaping the bumps in a predetermined shape during the connection between the terminal electrode portions and the other bumps formed on the terminal electrode portion of the substrate parts are made by forming on the surface a protective film formed on the terminal electrode portion.

【0008】請求項1記載の基板によれば、端子電極部上にバンプが形成された他の基板との接続後のバンプを所定形状に整形する開孔部が基板表面の保護膜に設けられている。 [0008] According to the substrate according to claim 1, aperture for shaping the bumps after connection with another substrate which bumps are formed on the terminal electrode portion in a predetermined shape is provided in the protective film on the substrate surface ing. 従って、所定形状を応力集中が起こりにくい形状とすることにより、バンプを開孔部の形状と同一の応力集中が起こりにくい形状に確実に整形することができ、接続後の応力集中に起因する接続部の破断を未然に防止することができる。 Therefore, by setting it hardly shaped stress concentrating a predetermined shape, the same stress concentration and shape of the opening of the bumps can be reliably shaping the unlikely shape, due to the stress concentration after connection connection the breaking parts can be prevented.

【0009】請求項2記載の基板は、端子電極部を有する基板と接続可能でかつ端子電極部上に形成されたバンプを有する基板であって、接続後のバンプ形状が所定形状になるように、前記バンプと他の基板の端子電極部との接続の際に前記バンプを所定形状に整形するための開孔部が前記バンプを取り囲むように前記端子電極部上に設けられた保護膜を表面に形成したものである。 [0009] substrate according to claim 2, there is provided a substrate having a bump formed on a connectable and terminal electrode portions and the substrate having a terminal electrode portion, as the bump shape after the connection is made in a predetermined shape the bumps and other surface a protective film opening portion is provided on the terminal electrode portion so as to surround the bump for shaping the bumps in a predetermined shape during the connection between the terminal electrode portion of the substrate it is obtained by forming in.

【0010】請求項2記載の基板によれば、他の基板の端子電極部との接続後のバンプを所定形状に整形する開孔部が、バンプを取り囲むように基板表面の保護膜に設けられている。 [0010] According to the substrate according to claim 2, wherein openings for shaping the bumps after connection of the terminal electrode portion of the other substrate in a predetermined shape is provided in the protective film on the surface of the substrate so as to surround the bump ing. 従って、所定形状を応力集中が起こりにくい形状とすることにより、バンプを開孔部の形状と同一の応力集中が起こりにくい形状に確実に整形することができ、接続後の応力集中に起因する接続部の破断を未然に防止することができる。 Therefore, by setting it hardly shaped stress concentrating a predetermined shape, the same stress concentration and shape of the opening of the bumps can be reliably shaping the unlikely shape caused by the stress concentration after connection connection the breaking parts can be prevented.

【0011】請求項3記載の基板の接続方法は、第一基板の端子電極部上に形成されたバンプと第二基板の端子電極部とを接続する基板の接続方法において、接続後のバンプ形状が所定形状になるように、前記バンプと前記第二基板の端子電極部との接続の際に前記バンプを所定形状に整形するための開孔部が端子電極部上に設けた保護膜を前記第一基板及び前記第二基板の何れか一方の表面に形成し、前記バンプをリフローまたは熱圧着により前記第二基板の端子電極部と接続することを特徴としている。 [0011] The connection method of a substrate according to claim 3, wherein, in the connection method of a substrate for connecting the bumps formed on the terminal electrode portion of the first substrate and a terminal electrode portion of the second substrate, the bumps form after connection the so they become in a predetermined shape, a protective layer opening for shaping the bumps in a predetermined shape during the connection between the bump and the terminal electrode portions of the second substrate is provided on the terminal electrode portions formed on the first substrate and one surface of the second substrate, it is characterized by connecting the terminal electrode portion of the second substrate to the bump by reflow or thermal bonding.

【0012】請求項3記載の基板の接続方法によれば、 According to the connection method of a substrate according to claim 3,
第一基板の端子電極部上に形成されたバンプと第二基板の端子電極部とをリフローまたは熱圧着により接続する際に、第一基板及び第二基板の何れか一方の表面に形成されている保護膜の端子電極部上の開孔部により、第一基板の端子電極部上に形成されているバンプは所定形状に整形される。 When connecting a bump formed on the terminal electrode portion of the first substrate and a terminal electrode portion of the second substrate by a reflow or thermal bonding, it is formed on the first substrate and either one surface of the second board the opening on the terminal electrode portion of the protective film are, bumps formed on the terminal electrode portion of the first substrate is shaped into a predetermined shape. 従って、所定形状を応力集中が起こりにくい形状とすることにより、バンプを開孔部の形状と同一の応力集中が起こりにくい形状に確実に整形することができ、接続後の応力集中に起因する接続部の破断を未然に防止することができる。 Therefore, by setting it hardly shaped stress concentrating a predetermined shape, the same stress concentration and shape of the opening of the bumps can be reliably shaping the unlikely shape, due to the stress concentration after connection connection the breaking parts can be prevented.

【0013】なお、本発明における基板には、プリント配線基板等の回路基板の他に、回路及び端子電極部を有するICチップやバンプを有するICパッケージ等が含まれる。 [0013] Incidentally, the substrate in the present invention, in addition to the circuit board, such as printed circuit board, includes an IC package or the like having an IC chip and bumps having a circuit and the terminal electrode portions. 従って、請求項1及び請求項2の発明における基板、請求項3の発明における第一基板及び第二基板は各々回路基板、半導体チップ、ICパッケージ等の何れであってもよく、請求項3に記載の基板の接続方法は、 Therefore, the substrate in the invention of claims 1 and 2, first and second substrates each circuit board in the invention of claim 3, the semiconductor chip may be any such as an IC package, to claim 3 connection method of a substrate for description,
ICパッケージ等を含む回路基板と半導体チップの接続、ICパッケージ等を含む回路基板同士の接続及び半導体チップ同士の接続に対して適用することができる。 Connection of the circuit board and the semiconductor chip containing the IC package or the like, can be applied to the connection and the semiconductor chips of the connection of the circuit boards comprising an IC package or the like.

【0014】 [0014]

【発明の実施の形態】 DETAILED DESCRIPTION OF THE INVENTION

[第1実施形態]以下、図面を参照しながら本発明に係る基板及び基板の接続方法を詳細に説明する。 [First Embodiment] Hereinafter will be described the substrate and the connection method of a substrate according to the present invention with reference to the drawings.

【0015】まず、図1(A)、(B)に基づいて、本発明の第1実施形態における基板としての回路基板とI [0015] First, FIG. 1 (A), the based (B), the circuit board and I as the substrate in the first embodiment of the present invention
Cチップとの接続方法を説明する。 The method of connecting the C chip will be described.

【0016】本実施形態に係る回路基板16は、図1 The circuit board 16 according to this embodiment, FIG. 1
(A)に示すように端子電極部18側の表面に端子電極部18上の略中央部分に端子電極部18上面に対する垂直方向中央部の径が両端部の径より細くなった鼓状の開孔部22を設けたレジスト等の保護膜20を有している。 (A) to the open diameter of the vertical central portion to substantially terminal electrode portion 18 upper surface in the central portion on the terminal electrode portion 18 on the surface of the terminal electrode portion 18 side drum shape with narrowed than the diameter of the both end portions as shown and a protective film 20 such as a resist having a hole 22.

【0017】なお、鼓状の開孔部22は次の工程により形成される。 [0017] Incidentally, hourglass-shaped openings 22 are formed by the following steps. まず、図3(A)に示すように、回路基板16の端子電極部18側の表面に開孔部22の半分の高さに一致する厚さに異方性エッチング樹脂50を塗布し、さらに異方性エッチング樹脂50の表面にマスク5 First, as shown in FIG. 3 (A), the anisotropic etching resin 50 is applied to a thickness that matches the terminal electrode portions 18 side of the surface of the circuit board 16 to a half of the height of openings 22, further mask on the surface of the anisotropic etching the resin 50 5
2を載置した後にエッチングを行なう。 It is etched 2 after mounting. なお、マスク5 The mask 5
2にはマスク開孔部52Aが設けられており、端子電極部18表面の略鉛直上方の面のみがマスクされるようにマスク52は載置される。 The 2 is provided with mask openings 52A, only substantially vertically above the surface of the terminal electrode portions 18 surface mask 52 as the mask is placed. 以上のエッチングの結果、異方性エッチング樹脂50における図3(B)の斜線部分が除去され、端子電極部18の表面上に開孔部22の下半分と同一形状の樹脂残部50Aが残る。 As a result of the above etching, the hatched portion shown in FIG. 3 (B) is removed in the anisotropic etching resin 50, the resin remaining portion 50A of the same shape as the lower half of the opening portion 22 remains on the surface of the terminal electrode portion 18. なお、エッチングの際のエッチングレートを調整することにより樹脂残部50Aの傾斜部分の傾斜の大きさを調整することができる。 Incidentally, it is possible to adjust the size of the inclination of the inclined portion of the resin remaining portion 50A by adjusting the etching rate during etching.

【0018】次に、図3(C)に示すように、回路基板16の端子電極部18側の表面に保護膜20を開孔部2 Next, FIG. 3 (C), the protection to the terminal electrode portions 18 side of the surface of the circuit board 16 film 20 an opening 2
2の高さと同一の厚さに塗布し、図3(D)に示すように、保護膜20の表面にマスク54を載置した後にエッチングを行なう。 Was applied to the height same thickness and 2, as shown in FIG. 3 (D), it is etched after placing the mask 54 on the surface of the protective film 20. なお、マスク54にはマスク開孔部5 The mask openings 5 ​​in the mask 54
4Aが設けられており、マスク開孔部54Aの中心が端子電極部18の中心の略鉛直上方に位置するようにマスク54は載置される。 4A is provided, the mask 54 so that the center of the mask aperture 54A is located substantially vertically above the center of the terminal electrode portions 18 are placed. 以上のエッチングの結果、開孔部22の上半分と同一形状である図3(E)の斜線部分に示す保護膜除去部20Aが除去される。 As a result of the above etching, the protective film removing unit 20A shown in the shaded portion of FIG. 3 have the same shape with the upper half of the opening 22 (E) are removed. なお、エッチングレートを調整することにより、保護膜除去部20Aの傾斜部分の傾斜の大きさを調整することができる。 By adjusting the etching rate, you are possible to adjust the size of the inclination of the inclined portion of the protective film removing unit 20A.

【0019】最後に、樹脂残部50Aのみをエッチング除去することにより、図3(F)に示す鼓状の開孔部2 [0019] Finally, by only resin remainder 50A etched, hourglass shaped opening 2 shown in FIG. 3 (F)
2が形成される。 2 is formed.

【0020】この際、開孔部22は、その容積が相対するバンプ12Cの体積と同一となるように形成するのが好ましい。 [0020] In this case, opening 22 is preferably its volume is formed so as to become the same as the volume of opposing the bumps 12C.

【0021】以上のように形成された回路基板16とI The above-formed circuit board 16 and the I
Cチップ10との接続方法を次に説明する。 Next will be described how to connect the C chip 10.

【0022】まず、図1(A)に示すようにハンダによって構成された円柱状のバンプ12Cが端子電極部11 [0022] First, cylindrical bumps 12C terminal electrode portions 11 formed by the solder, as shown in FIG. 1 (A)
上に形成されたICチップ10をバンプ12C側を下向きとして回路基板16の端子電極部18上方に位置決めし、次にICチップ10全体を矢印30方向に移動させると共にリフローによりバンプ12Cを加熱して溶融させ、ICチップ10をICチップ10の端子電極部11 The IC chip 10 formed on positioning the terminal electrode portions 18 above the circuit board 16 bumps 12C side facing downward, by then reflow moves the entire IC chip 10 in the arrow 30 direction by heating the bumps 12C melted, the terminal electrodes 11 of the IC chip 10 of the IC chip 10
側の表面を覆っている保護膜14の表面と回路基板16 Surface and the circuit board 16 of the protective film 14 covering the surface of the side
上の保護膜20の表面とが接触する位置まで移動して停止させ、バンプ12Cを冷却して固着させる。 Moves to a position where the surface of the upper protective film 20 contacts stops, to fix the bumps 12C and cooled.

【0023】以上の接続方法でICチップ10と回路基板16が接続された状態を図1(B)に示す。 [0023] The state in which the IC chip 10 and the circuit board 16 are connected by the above connection method shown in FIG. 1 (B). 図1 Figure 1
(B)に示すように接続する際に加熱されることにより溶融したバンプ12Cは、保護膜20に設けられた開孔部22の形状に拘束されて接続後は開孔部22と同様の形状、すなわち鼓状のバンプ12Dとなる。 Bumps 12C melted by being heated when connected as shown in (B) after connection is constrained into the shape of the opening 22 provided in the protective film 20 is the same shape as the opening 22 , i.e. a drum-shaped bump 12D.

【0024】以上説明したように、本発明の第1実施形態では、回路基板16上の保護膜20に鼓状の開孔部2 [0024] As described above, in the first embodiment of the present invention, the protection on the circuit board 16 film 20 to opening of Kojo 2
2を設けることにより、バンプ12Cと端子電極部18 By providing the 2, bumps 12C and the terminal electrode portions 18
とを接続する際に、バンプ12Cを応力集中が起こりにくい鼓状に確実に整形することができるので、バンプ1 When connecting the door, since the bumps 12C can stress concentration reliably shaping the unlikely hourglass shape, bumps 1
2Cと端子電極部18との接続後の応力集中に起因する接続部の破断を未然に防止することができる。 2C and breakage of the connecting portion due to stress concentration after the connection between the terminal electrode portion 18 can be prevented.

【0025】[第2実施形態]次に、図2に基づいて、 [0025] [Second Embodiment] Next, with reference to FIG. 2,
本発明の第2実施形態における回路基板と基板としてのICチップとの接続方法を説明する。 The method of connecting the IC chip as a circuit board and the board in the second embodiment of the present invention will be described.

【0026】本第2実施形態に係るICチップ10は、 The IC chip 10 according to the second embodiment,
図2に示すように端子電極部11側の表面に端子電極部11上の略中央部分に円柱状に形成されたバンプ12E Bump 12E which is formed in a cylindrical shape at a substantially central portion on the terminal electrode portion 11 on the surface terminal electrode portions 11 side as shown in FIG. 2
を取り囲むように鼓状の開孔部22Bを設けた保護膜1 Protection is provided an opening portion 22B of Kojo so as to surround the film 1
4Bを有している。 Has a 4B. なお、保護膜14Bに設けられた開孔部22Bは、第1実施形態における開孔部の形成工程と同様の工程にて形成することができる。 Incidentally, the openings 22B provided in the protective film 14B may be formed with the same process as forming the opening portion in the first embodiment. この際、開孔部22Bは、その容積がバンプ12Eの体積と同一となるように形成するのが好ましい。 At this time, openings 22B, the volume is preferably formed so as to become the same as the volume of the bump 12E.

【0027】以上のように保護膜14Bが形成されたI The protective film 14B as described above is formed I
Cチップ10と回路基板16との接続方法を次に説明する。 Next will be described how to connect the C chip 10 and the circuit board 16.

【0028】まず、ICチップ10をバンプ12E側を下向きとしてバンプ12Eを回路基板16の端子電極部18上方に位置決めし、次にICチップ10全体を矢印32方向に移動させると共にリフローによりバンプ12 Firstly, the bumps 12 by reflowing with the IC chip 10 to bump 12E is positioned to the terminal electrode portions 18 above the circuit board 16 facing downward bump 12E side, to then move the entire IC chip 10 in the arrow 32 direction
Eを加熱して溶融させ、ICチップ10をICチップ1 E heated to melt the, IC chip 1 IC chip 10
0の端子電極部11側の表面を覆っている保護膜14B Protective film 14B which covers the 0 terminal electrode portion 11 side surface of the
の表面と回路基板16上の保護膜20Bの表面とが接触する位置まで移動して停止させ、バンプ12Eを冷却して固着させる。 Move stops to a position where the surface and the circuit surface of the protective film 20B on the substrate 16 are in contact, to fix the bump 12E and cooled.

【0029】以上の接続方法により、接続する際に加熱されることにより溶融したバンプ12Eは、保護膜14 [0029] By the above connection, the bump 12E melted by being heated at the time of connection, the protective film 14
Bに設けられた開孔部22Bの形状に拘束されて接続後は開孔部22Bと同様の形状、すなわち鼓状となる。 After connection is constrained into the shape of the opening 22B provided on the B the same shape as the opening 22B, that is, Kojo.

【0030】以上説明したように、本発明の第2実施形態の基板及び基板の接続方法では、ICチップ10上の保護膜14Bに鼓状の開孔部22Bを設けることにより、バンプ12Eと端子電極部18とを接続する際に、 [0030] As described above, in the second embodiment of the substrate and the substrate of the connection method of the present invention, by providing the opening portion 22B of Kojo protective film 14B on the IC chip 10, bumps 12E and terminal when connecting the electrode portions 18,
バンプ12Eを応力集中が起こりにくい鼓状に確実に整形することができるので、基板接続後の応力集中に起因する接続部の破断を未然に防止することができる。 Since the bump 12E can stress concentration reliably shaped into unlikely hourglass shape, we are possible to prevent breakage of the connecting portion due to stress concentration after substrate connection in advance.

【0031】なお、上記各実施形態では、リフローによりICチップの端子電極部上に形成されたバンプを溶融して回路基板上の端子電極部と接続する場合について説明したが、本発明はこれに限定されるものではなく、熱圧着により接続するようにしてもよい。 [0031] In the above embodiments, the description has been given of the case to be connected to the terminal electrode portions on the circuit board to melt the bumps formed on the terminal electrode portion of the IC chip by reflow, the present invention is to is not limited, it may be connected by thermocompression bonding. この場合は、金(Au)、ハンダ等により構成したバンプを回路基板の端子電極部上方に位置合わせした後、バンプをバンプ液相点温度未満の温度に加熱して端子電極部に熱圧着する。 In this case, gold (Au), after constituting the bumps was aligned with the terminal electrode portion above the circuit board by solder or the like, and thermo-compression bonding to the terminal electrode portions by heating the bumps to a temperature below the bump liquid phase point temperature . この時、加熱されて軟化したバンプは、保護膜に形成された鼓状の開孔部に拘束されて塑性変形を起こし、 At this time, we bump softened by being heated is constrained to drum-shaped openings formed in the protective film cause plastic deformation,
鼓状のバンプとなる。 A drum-shaped bump.

【0032】また、上記各実施形態では、保護膜に形成する開孔部は、その容積がバンプの体積と同一となるように形成する場合について説明したが、本発明はこれに限定されるものではなく、開孔部の容積はバンプの体積以下であればよい。 [0032] In the above embodiments, opening for forming the protective layer include those although its volume has been described the case of forming to be equal and the volume of the bump, the present invention is not limited thereto rather, the volume of the opening portion may be at less volume of the bump. なお、開孔部の容積がバンプの体積より小さい場合には、接続後にICチップの保護膜と回路基板の保護膜との間に隙間ができるため、この隙間を封止樹脂にて封止するとさらに信頼性を上げることができる。 Incidentally, when the volume of the openings is smaller than the volume bumps, since a gap between the protective film and the circuit board protective film of the IC chip after connection, when sealing the gaps at the sealing resin it is possible to further improve the reliability.

【0033】また、上記各実施形態では、ICチップ側の端子電極部上にバンプを形成して回路基板の端子電極部と接続する場合について説明したが、本発明はこれに限定されるものではなく、回路基板側の端子電極部上にバンプを形成する場合においても同様の効果が得られる。 Further, in the above embodiment has described the case of connecting the terminal electrodes of the circuit board by forming a bump on the terminal electrode portion of the IC chip side, but the present invention is not limited to this no, the same effect can be obtained even in the case of forming a bump on the circuit board side of the terminal electrode portions on.

【0034】また、上記各実施形態では、開孔部の形状が鼓状である場合について説明したが、本発明はこれに限定されるものではなく、応力集中が起こりにくい所定の形状とすることができる。 [0034] In the above embodiments, it is the shape of the opening portion has been described for the case is a drum shape, the invention is not limited thereto, to hardly predetermined shape stress concentration can.

【0035】また、上記各実施形態では、ICチップと回路基板との接続を行う場合について説明したが、本発明はこれに限定されるものではなく、バンプを含むIC [0035] In the above embodiments, there has been described a case where the connection between the IC chip and the circuit board, the present invention is not limited to this, IC including bumps
パッケージと基板の接続、ICチップ同士あるいはIC Connection of the package and the board, IC chips or IC
パッケージを含む回路基板同士の接続においても適用することができる。 It can also be applied in connection of the circuit boards comprising the package.

【0036】さらに、上記各実施形態では、バンプ形状を円柱状としたが、本発明はこれに限定されるものではなく、球状バンプあるいはボールバンプ等についても適用可能である。 Furthermore, the above embodiments, the bumps shape was cylindrical, the present invention is not limited to this but is also applicable to spherical bumps or balls bumps.

【0037】 [0037]

【発明の効果】以上説明したように請求項1に記載の基板は、端子電極部上にバンプが形成された他の基板との接続後のバンプを所定形状に整形する開孔部が基板表面の保護膜に設けられているので、所定形状を応力集中が起こりにくい形状とすることにより、バンプを開孔部の形状と同一の応力集中が起こりにくい形状に確実に整形することができ、接続後の応力集中に起因する接続部の破断を未然に防止することができる、という効果を有する。 The substrate of claim 1 as has been described above, according to the present invention, the opening is a substrate surface to shape the bump after connection with another substrate which bumps are formed on the terminal electrode portion into a predetermined shape since provided in the protective film, by a difficult shape to occur stress concentration to a predetermined shape, bumps can be the same stress concentration and shape of the opening is reliably shaping the unlikely shape, connected it is possible to prevent breakage of the connecting portion due to stress concentration after the advance has the effect that.

【0038】また、請求項2に記載の基板は、他の基板の端子電極部との接続後のバンプを所定形状に整形する開孔部が、バンプを取り囲むように基板表面の保護膜に設けられているので、所定形状を応力集中が起こりにくい形状とすることにより、バンプを開孔部の形状と同一の応力集中が起こりにくい形状に確実に整形することができ、接続後の応力集中に起因する接続部の破断を未然に防止することができる、という効果を有する。 [0038] The substrate of claim 2, aperture for shaping the bumps after connection of the terminal electrode portion of the other substrate in a predetermined shape is provided on the protective film on the surface of the substrate so as to surround the bump since being a predetermined shape by the stress concentration and hardly shape, bumps can be the same stress concentration and shape of the opening is reliably shaping the unlikely shape, the stress concentration after connection it is possible to prevent breakage of the connection portion due to advance, with the effect that.

【0039】さらに、請求項3に記載の基板の接続方法は、第一基板の端子電極部上に形成されたバンプと第二基板の端子電極部とをリフローまたは熱圧着により接続する際に、第一基板及び第二基板の何れか一方の表面に形成されている保護膜の端子電極部上の開孔部により、 [0039] Furthermore, the connection method of a substrate according to claim 3, when the bump formed on the terminal electrode portion of the first substrate and a terminal electrode portion of the second substrate are connected by reflow or thermal bonding, the opening on the terminal electrode portion of the protective film formed on the first substrate and one surface of the second substrate,
第一基板の端子電極部上に形成されているバンプは所定形状に整形されるので、所定形状を応力集中が起こりにくい形状とすることにより、バンプを開孔部の形状と同一の応力集中が起こりにくい形状に確実に整形することができ、接続後の応力集中に起因する接続部の破断を未然に防止することができる、という効果を有する。 Since bumps are formed on the terminal electrode portion of the first substrate is shaped into a predetermined shape, by a hardly occurs shape stress concentration to a predetermined shape, the same stress concentration and shape of the opening bumps the unlikely shape can be reliably shaping, the breakage of the connecting portion due to stress concentration after connection can be prevented, an effect that.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1実施形態における基板及び基板の接続方法を示す概略側面図であり、(A)は接続前の状態を示す図、(B)は接続後の状態を示す図である。 Figure 1 is a schematic side view showing a substrate and a connection method of a substrate according to the first embodiment of the present invention, (A) is a diagram showing a state before connection, (B) is a view showing a state after the connection is there.

【図2】本発明の第2実施形態における基板及び基板の接続方法を示す概略側面図である。 2 is a schematic side elevational view showing a substrate and a connection method of a substrate according to the second embodiment.

【図3】保護膜に設けられた鼓状開孔部の形成工程を示す概略側面図である。 Figure 3 is a schematic side view showing a drum-shaped openings of the forming steps provided in the protective film.

【図4】従来の基板及び基板の接続方法を示す概略側面図であり、(A)は接続前の状態を示す図、(B)は接続後の状態を示す図である。 4 is a schematic side view showing a connection method of a conventional substrate and a substrate is a diagram illustrating figure, (B) the state after the connection shown the (A) is provided before the connection state.

【符号の説明】 DESCRIPTION OF SYMBOLS

10 ICチップ(基板) 11 端子電極部 12 バンプ 14 保護膜 16 回路基板(基板) 18 端子電極部 20 保護膜 22 開孔部 10 IC chip (substrate) 11 terminal electrode portions 12 bump 14 protective layer 16 circuit board (board) 18 terminal electrode portions 20 protective film 22 opening

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 端子電極部上に形成されたバンプを有する基板と接続可能でかつ端子電極部を有する基板であって、 接続後のバンプ形状が所定形状になるように、前記端子電極部と他の基板の端子電極部上に形成されたバンプとの接続の際に前記バンプを所定形状に整形するための開孔部が前記端子電極部上に設けられた保護膜を表面に形成した基板。 1. A substrate having a substrate that can be connected in and terminal electrode portion having a bump formed on the terminal electrode portion, as the bump shape after the connection is made in a predetermined shape, and the terminal electrode portions substrate to form a protective film which opening is provided on the terminal electrode portions for shaping the bumps in a predetermined shape during contact with another bump formed on the terminal electrode portion of the substrate surface .
  2. 【請求項2】 端子電極部を有する基板と接続可能でかつ端子電極部上に形成されたバンプを有する基板であって、 接続後のバンプ形状が所定形状になるように、前記バンプと他の基板の端子電極部との接続の際に前記バンプを所定形状に整形するための開孔部が前記バンプを取り囲むように前記端子電極部上に設けられた保護膜を表面に形成した基板。 2. A substrate having a bump formed on a connectable and terminal electrode portions and the substrate having a terminal electrode portion, the bump shape after connection to a predetermined shape, the bumps and the other substrate opening portion is formed on the surface of the protective film provided on the terminal electrode portion on to surround the bump for shaping the bumps in a predetermined shape during the connection between the terminal electrode portion of the substrate.
  3. 【請求項3】 第一基板の端子電極部上に形成されたバンプと第二基板の端子電極部とを接続する基板の接続方法において、 接続後のバンプ形状が所定形状になるように、前記バンプと前記第二基板の端子電極部との接続の際に前記バンプを所定形状に整形するための開孔部が端子電極部上に設けた保護膜を前記第一基板及び前記第二基板の何れか一方の表面に形成し、前記バンプをリフローまたは熱圧着により前記第二基板の端子電極部と接続することを特徴とする基板の接続方法。 3. A method for connecting board for connecting the bumps formed on the terminal electrode portion of the first substrate and a terminal electrode portion of the second substrate, as bumps shape after the connection is made in a predetermined shape, wherein bumps and the first substrate and the second substrate a protective film opening portion is provided on the terminal electrode portion for shaping the bumps in a predetermined shape during the connection between the terminal electrode portion of the second substrate one of formed on the surface, the connection method of a substrate, characterized by connecting the terminal electrode portion of the second substrate to the bump by reflow or thermal bonding.
JP8277908A 1996-10-21 1996-10-21 Substrate and its connection Pending JPH10125726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8277908A JPH10125726A (en) 1996-10-21 1996-10-21 Substrate and its connection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8277908A JPH10125726A (en) 1996-10-21 1996-10-21 Substrate and its connection

Publications (1)

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JPH10125726A true JPH10125726A (en) 1998-05-15

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JP8277908A Pending JPH10125726A (en) 1996-10-21 1996-10-21 Substrate and its connection

Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306897B1 (en) * 2001-10-29 2013-12-11 Fujitsu Limited Method of making electrode-to-electrode bond structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306897B1 (en) * 2001-10-29 2013-12-11 Fujitsu Limited Method of making electrode-to-electrode bond structure

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