JPH10116490A - 積層メモリ・セルを有する磁気ランダム・アクセス・メモリおよびその製造方法 - Google Patents

積層メモリ・セルを有する磁気ランダム・アクセス・メモリおよびその製造方法

Info

Publication number
JPH10116490A
JPH10116490A JP9231784A JP23178497A JPH10116490A JP H10116490 A JPH10116490 A JP H10116490A JP 9231784 A JP9231784 A JP 9231784A JP 23178497 A JP23178497 A JP 23178497A JP H10116490 A JPH10116490 A JP H10116490A
Authority
JP
Japan
Prior art keywords
magnetic
word
sense
line
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9231784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10116490A5 (enExample
Inventor
Saied N Tehrani
セイド・エヌ・テラニ
Xiaodong T Zhu
クシアオドング・ティー・ズー
Eugene Chen
ユージーン・チェン
Herbert Goronkin
ハーバート・ゴロンキン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPH10116490A publication Critical patent/JPH10116490A/ja
Publication of JPH10116490A5 publication Critical patent/JPH10116490A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP9231784A 1996-08-23 1997-08-13 積層メモリ・セルを有する磁気ランダム・アクセス・メモリおよびその製造方法 Pending JPH10116490A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US702781 1996-08-23
US08/702,781 US5920500A (en) 1996-08-23 1996-08-23 Magnetic random access memory having stacked memory cells and fabrication method therefor

Publications (2)

Publication Number Publication Date
JPH10116490A true JPH10116490A (ja) 1998-05-06
JPH10116490A5 JPH10116490A5 (enExample) 2005-06-02

Family

ID=24822572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9231784A Pending JPH10116490A (ja) 1996-08-23 1997-08-13 積層メモリ・セルを有する磁気ランダム・アクセス・メモリおよびその製造方法

Country Status (3)

Country Link
US (1) US5920500A (enExample)
JP (1) JPH10116490A (enExample)
DE (1) DE19726852A1 (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104632A (en) * 1998-05-18 2000-08-15 Canon Kabushiki Kaisha Magnetic thin film memory and recording and reproducing method and apparatus using such a memory
JP2000293982A (ja) * 1999-04-08 2000-10-20 Victor Co Of Japan Ltd 磁性メモリ
JP2002217382A (ja) * 2001-01-18 2002-08-02 Sharp Corp 磁気メモリおよび磁気メモリの製造方法
JP2002526910A (ja) * 1998-09-30 2002-08-20 インフィネオン テクノロジース アクチエンゲゼルシャフト 高い障害耐性を有する磁気抵抗メモリ
WO2004001872A1 (ja) 2002-06-19 2003-12-31 Sony Corporation 磁気抵抗効果素子及び磁気メモリ装置
US6891193B1 (en) * 2002-06-28 2005-05-10 Silicon Magnetic Systems MRAM field-inducing layer configuration
JP2005129801A (ja) * 2003-10-24 2005-05-19 Sony Corp 磁気記憶素子及び磁気メモリ
WO2007132933A1 (ja) 2006-05-16 2007-11-22 Showa Denko K.K. 研磨組成物の製造方法
WO2008013226A1 (en) 2006-07-28 2008-01-31 Showa Denko K.K. Polishing composition
US7529122B2 (en) 2006-11-02 2009-05-05 Sony Corporation Storage element and memory
US7633796B2 (en) 2007-01-19 2009-12-15 Sony Corporation Storage element and memory
US7901474B2 (en) 2004-12-22 2011-03-08 Showa Denko K.K. Polishing composition and polishing method
US8072789B2 (en) 2008-12-03 2011-12-06 Sony Corporation Resistance-change memory device
US8149613B2 (en) 2008-12-03 2012-04-03 Sony Corporation Resistance variable memory device
KR101210125B1 (ko) 2010-12-14 2012-12-07 한양대학교 산학협력단 절연막 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법
US8437180B2 (en) 2009-06-24 2013-05-07 Sony Corporation Memory and write control method

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW416057B (en) * 1997-09-17 2000-12-21 Siemens Ag Memory-cell device and its production method
DE19744095A1 (de) 1997-10-06 1999-04-15 Siemens Ag Speicherzellenanordnung
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
US6269027B1 (en) * 1998-04-14 2001-07-31 Honeywell, Inc. Non-volatile storage latch
TW454187B (en) 1998-09-30 2001-09-11 Siemens Ag Magnetoresistive memory with low current density
EP1157388B1 (de) * 1999-02-26 2002-07-31 Infineon Technologies AG Speicherzellenanordnung und verfahren zu deren herstellung
US6191973B1 (en) 1999-09-27 2001-02-20 Motorola Inc. Mram cam
US6269016B1 (en) 2000-06-19 2001-07-31 Motorola Inc. MRAM cam
DE10034062A1 (de) * 2000-07-13 2002-01-24 Infineon Technologies Ag Integrierter Halbleiterspeicher mit Speicherzellen in mehre-ren Speicherzellenfeldern und Verfahren zur Reparatur eines solchen Speichers
DE10054520C1 (de) * 2000-11-03 2002-03-21 Infineon Technologies Ag Datenspeicher mit mehreren Bänken
US7242922B2 (en) * 2000-12-29 2007-07-10 Vesta Corporation Toll free calling account recharge system and method
US6358756B1 (en) 2001-02-07 2002-03-19 Micron Technology, Inc. Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
US6515341B2 (en) * 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
JP2002299575A (ja) 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
JP4488645B2 (ja) * 2001-04-20 2010-06-23 株式会社東芝 磁気記憶装置
DE10132849A1 (de) * 2001-07-06 2003-01-23 Infineon Technologies Ag Halbleiterspeichereinrichtung
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
JP2003196973A (ja) * 2001-12-21 2003-07-11 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6821907B2 (en) 2002-03-06 2004-11-23 Applied Materials Inc Etching methods for a magnetic memory cell stack
US6893893B2 (en) 2002-03-19 2005-05-17 Applied Materials Inc Method of preventing short circuits in magnetic film stacks
US20030181056A1 (en) * 2002-03-22 2003-09-25 Applied Materials, Inc. Method of etching a magnetic material film stack using a hard mask
US6754124B2 (en) * 2002-06-11 2004-06-22 Micron Technology, Inc. Hybrid MRAM array structure and operation
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6970375B2 (en) * 2002-08-02 2005-11-29 Unity Semiconductor Corporation Providing a reference voltage to a cross point memory array
US6831854B2 (en) * 2002-08-02 2004-12-14 Unity Semiconductor Corporation Cross point memory array using distinct voltages
US6836421B2 (en) * 2002-08-02 2004-12-28 Unity Semiconductor Corporation Line drivers that fit within a specified line pitch
US6850429B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Cross point memory array with memory plugs exhibiting a characteristic hysteresis
US6850455B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Multiplexor having a reference voltage on unselected lines
US7057914B2 (en) * 2002-08-02 2006-06-06 Unity Semiconductor Corporation Cross point memory array with fast access time
US7009909B2 (en) * 2002-08-02 2006-03-07 Unity Semiconductor Corporation Line drivers that use minimal metal layers
US6906939B2 (en) * 2002-08-02 2005-06-14 Unity Semiconductor Corporation Re-writable memory with multiple memory layers
US6798685B2 (en) * 2002-08-02 2004-09-28 Unity Semiconductor Corporation Multi-output multiplexor
US6834008B2 (en) * 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
US6917539B2 (en) * 2002-08-02 2005-07-12 Unity Semiconductor Corporation High-density NVRAM
US7079442B2 (en) * 2002-08-02 2006-07-18 Unity Semiconductor Corporation Layout of driver sets in a cross point memory array
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
US6984585B2 (en) * 2002-08-12 2006-01-10 Applied Materials Inc Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer
US20040026369A1 (en) * 2002-08-12 2004-02-12 Chentsau Ying Method of etching magnetic materials
US6964928B2 (en) * 2002-08-29 2005-11-15 Chentsau Ying Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask
US6759263B2 (en) 2002-08-29 2004-07-06 Chentsau Ying Method of patterning a layer of magnetic material
US6714441B1 (en) * 2002-09-17 2004-03-30 Micron Technology, Inc. Bridge-type magnetic random access memory (MRAM) latch
US6660568B1 (en) * 2002-11-07 2003-12-09 International Business Machines Corporation BiLevel metallization for embedded back end of the line structures
US6992919B2 (en) * 2002-12-20 2006-01-31 Integrated Magnetoelectronics Corporation All-metal three-dimensional circuits and memories
US7005852B2 (en) 2003-04-04 2006-02-28 Integrated Magnetoelectronics Corporation Displays with all-metal electronics
KR100542743B1 (ko) * 2003-04-22 2006-01-11 삼성전자주식회사 자기 랜덤 엑세스 메모리
US7027319B2 (en) * 2003-06-19 2006-04-11 Hewlett-Packard Development Company, L.P. Retrieving data stored in a magnetic integrated memory
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US7183130B2 (en) * 2003-07-29 2007-02-27 International Business Machines Corporation Magnetic random access memory and method of fabricating thereof
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
TW200521217A (en) * 2003-11-14 2005-07-01 Showa Denko Kk Polishing composition and polishing method
US7339818B2 (en) 2004-06-04 2008-03-04 Micron Technology, Inc. Spintronic devices with integrated transistors
US7075818B2 (en) * 2004-08-23 2006-07-11 Maglabs, Inc. Magnetic random access memory with stacked memory layers having access lines for writing and reading
US20060102197A1 (en) * 2004-11-16 2006-05-18 Kang-Lie Chiang Post-etch treatment to remove residues
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
WO2006112519A1 (ja) * 2005-04-14 2006-10-26 Showa Denko K.K. 研磨組成物
US7911830B2 (en) 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US10497713B2 (en) * 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455626A (en) * 1983-03-21 1984-06-19 Honeywell Inc. Thin film memory with magnetoresistive read-out
US5398200A (en) * 1992-03-02 1995-03-14 Motorola, Inc. Vertically formed semiconductor random access memory device
US5347485A (en) * 1992-03-03 1994-09-13 Mitsubishi Denki Kabushiki Kaisha Magnetic thin film memory
US5617071A (en) * 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104632A (en) * 1998-05-18 2000-08-15 Canon Kabushiki Kaisha Magnetic thin film memory and recording and reproducing method and apparatus using such a memory
JP2002526910A (ja) * 1998-09-30 2002-08-20 インフィネオン テクノロジース アクチエンゲゼルシャフト 高い障害耐性を有する磁気抵抗メモリ
JP2000293982A (ja) * 1999-04-08 2000-10-20 Victor Co Of Japan Ltd 磁性メモリ
JP2002217382A (ja) * 2001-01-18 2002-08-02 Sharp Corp 磁気メモリおよび磁気メモリの製造方法
WO2004001872A1 (ja) 2002-06-19 2003-12-31 Sony Corporation 磁気抵抗効果素子及び磁気メモリ装置
US6891193B1 (en) * 2002-06-28 2005-05-10 Silicon Magnetic Systems MRAM field-inducing layer configuration
JP2005129801A (ja) * 2003-10-24 2005-05-19 Sony Corp 磁気記憶素子及び磁気メモリ
US7901474B2 (en) 2004-12-22 2011-03-08 Showa Denko K.K. Polishing composition and polishing method
WO2007132933A1 (ja) 2006-05-16 2007-11-22 Showa Denko K.K. 研磨組成物の製造方法
WO2008013226A1 (en) 2006-07-28 2008-01-31 Showa Denko K.K. Polishing composition
US7529122B2 (en) 2006-11-02 2009-05-05 Sony Corporation Storage element and memory
US7633796B2 (en) 2007-01-19 2009-12-15 Sony Corporation Storage element and memory
US8072789B2 (en) 2008-12-03 2011-12-06 Sony Corporation Resistance-change memory device
US8149613B2 (en) 2008-12-03 2012-04-03 Sony Corporation Resistance variable memory device
US8437180B2 (en) 2009-06-24 2013-05-07 Sony Corporation Memory and write control method
KR101210125B1 (ko) 2010-12-14 2012-12-07 한양대학교 산학협력단 절연막 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법

Also Published As

Publication number Publication date
DE19726852A1 (de) 1998-02-26
US5920500A (en) 1999-07-06

Similar Documents

Publication Publication Date Title
JPH10116490A (ja) 積層メモリ・セルを有する磁気ランダム・アクセス・メモリおよびその製造方法
EP1054449B1 (en) Magnetic random access memory and fabricating method thereof
US5732016A (en) Memory cell structure in a magnetic random access memory and a method for fabricating thereof
US6835423B2 (en) Method of fabricating a magnetic element with insulating veils
US6153443A (en) Method of fabricating a magnetic random access memory
US7402529B2 (en) Method of applying cladding material on conductive lines of MRAM devices
US6780652B2 (en) Self-aligned MRAM contact and method of fabrication
WO2004051742A1 (en) Magnetoelectronics device and method for fabricating the same
US6551852B2 (en) Method of forming a recessed magnetic storage element
CN102881820A (zh) 磁阻式随机存储器及其制造方法
US6559511B1 (en) Narrow gap cladding field enhancement for low power programming of a MRAM device
US7602032B2 (en) Memory having cap structure for magnetoresistive junction and method for structuring the same
JP4583997B2 (ja) 磁気メモリセルアレイおよびその製造方法
TWI392013B (zh) Dry etching method and manufacturing method of magnetic memory device
US11005031B2 (en) Stacked magnetoresistive structures and methods therefor
US7169622B2 (en) Magnetoresistive random access memory devices and methods for fabricating the same
US6501144B1 (en) Conductive line with multiple turns for programming a MRAM device
US20020146887A1 (en) Method for forming magnetoresistive random access memory with magnetic tunnelling junction
JP2002170378A (ja) モノリシックに集積化可能なインダクタンス
EP4156275A1 (en) 1-bit 3-terminal racetrack array with integrated magnetic tunnel junction (mtj)
WO2002075808A2 (en) Self-aligned mram contact and method of fabrication

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040811

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040811

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20041217

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20051017

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20051017

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060411

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20060710

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20060713

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060727

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070515

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070815

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080815