JPH09246599A - Apparatus for measuring electrooptic characteristic - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate the position alignment for electric connection with a semiconductor element to be measured, and to make it possible to measure optical characteristics uniformly. SOLUTION: For a semiconductor element 21 to be measured, one electric connection is performed by the contact of contact members 24, which are distributed on the surface of a holding part 27, with upper electrodes 28 under the state, wherein the element 21 is not separated from a semiconductor s substrate 29. The other electric connection is performed from the lower surface of the semiconductor substrate 29 through a stage. The electric characteristics of the semiconductor element 21 to be measured are measured by using a power supply 22 and an electric-characteristic measuring device 23. The contact members 24 are distributed on the surface of the holding member 27, whose material is transparent such as an electric insulating elastomer. This conducting lines 31 are penetrated in the holding member 27 and electrically connected to the transparent electrode pattern of an upper glass substrate 32. When the semiconductor element to be measured 21 emits the light, the light is received by a light receiving element 25, and the optical characteristics are measured by an optical-characteristic measuring device 26.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for measuring electric and optical characteristics of a semiconductor element such as a semiconductor light emitting element, and more particularly to a portion for electrically connecting with the semiconductor element.

[0002]

2. Description of the Related Art Conventionally, electrical characteristics and optical characteristics of semiconductor elements such as light emitting diodes (hereinafter sometimes abbreviated as "LED") have been measured by the method shown in FIG. For the semiconductor device 1 to be measured, the power supply 2 for measurement and the electrical characteristic measuring device 3 are connected to the metal needle 4.
Is used as a probe to measure electrical characteristics while making electrical connection. The electrical characteristics include forward current characteristics and reverse current characteristics of LEDs. Forward current characteristics are LED
The relationship between the forward current I _F flowing in the forward direction between the anode and the cathode and the voltage drop V _F due to the forward current I _F. The reverse current characteristic is a reverse current I _R which is a direct current flowing when a reverse voltage V _R which is a reverse direct current voltage is applied between the anode and the cathode.
Represents the characteristics of. A light receiving element 5 is arranged above the semiconductor element to be measured 1 and the light generated from the semiconductor element 1 to be measured is received to measure the optical characteristics by the optical characteristic measuring device 6. The optical characteristics include luminous intensity in units of candela and peak wavelength which is a peak of emission wavelength.
The metal needles 4 are brought into contact with the plurality of semiconductor devices 1 to be measured, and the changeover switch 7 switches the energization state to each semiconductor device 1 to be measured to measure each chip.

An upper electrode 8 for external connection is formed on the upper surface of the semiconductor element 1 to be measured, and the tip of the metal needle 4 is pressed from above to make an electrical connection to the individual semiconductor element 1 to be measured. . The other electrode of the semiconductor element to be measured 1 is brought into surface contact with the stage 10 from the lower surface of the semiconductor substrate 9 on which the semiconductor element to be measured 1 is formed.

FIG. 5 shows the shape of the semiconductor device 1 to be measured.
The semiconductor device 1 to be measured is measured in a state where it is not completely separated from the semiconductor substrate 9. An upper electrode 8 is formed on the upper part of the semiconductor device 1 to be measured, for example, at a substantially central portion thereof, and a lower electrode is formed on the lower surface of the semiconductor substrate 9. FIG.
In the state in which the lower electrode is not completely separated from the semiconductor substrate 9 as shown in, the lower electrode is in a state of being commonly connected to each semiconductor element to be measured 1.

FIG. 6 shows the outer shape of the metal needle 6. Metal needle 6
Has a tip portion 11 formed of a refractory metal such as tungsten (W) or osmium (Os) alloy and having a diameter d that is thinned to about 10 μm, and a thick body 12 having a diameter D of about 600 μm. The part where the diameter changes from the body 12 to the tip 11 is conical, and the apex angle α is 10 °.
It is. Such a metal needle 4 is widely used in a semiconductor integrated circuit tester or the like.

As shown in FIG. 5, when the semiconductor elements to be measured 1 are arranged in a matrix form at equal intervals in a state where the respective elements are electrically separated from each other on the semiconductor substrate, as shown in FIG.
FIG. 7 is a plan view showing a state in which measurement is performed using the metal needle 4.
When the arrangement pitch of the semiconductor elements 1 to be measured is small, the metal needles 4 are alternately contacted from different directions toward the upper electrode 8 of the semiconductor element 1 to be measured.

In the measuring method as shown in FIG. 4, a plurality of, for example, about 3 to 5 chips of metal needles 4 are simultaneously brought into contact with the upper electrodes 8 of a plurality of semiconductor devices to be measured 1, and the changeover switch 7 sequentially operates the semiconductor devices to be measured. While switching the element 1, for each semiconductor element 1 to be measured, the electrical characteristic is measured by the electrical characteristic measuring device 3 and the light-receiving element 5 receives the light emitted by energization, and the optical characteristic is measured by the optical characteristic measuring device 6. And measurement. When the measurement is completed for all of the plurality of semiconductor elements 1 to be measured electrically connected by the metal needle 4, the metal needle 4 is separated from the upper electrode 8 of the semiconductor element 1 to be measured, and the measurement is not yet completed. After moving to the semiconductor element 1 to be measured, the tip of the metal needle 4 is pressed against the upper electrode 8 again to perform the measurement.

[0008]

When the optical characteristics of the semiconductor element to be measured 1 are measured by the method shown in FIG. 4, the light generated by the light emission from the semiconductor element to be measured 1 is the semiconductor to be measured. The light is shielded by the metal needle 4 existing above the element 1 and then enters the light receiving element 5. Metal needle 4
Strictly speaking, the state of light shielding by each needle is different, so that even if the light emitted from the semiconductor device under test 1 is uniform,
The measurement results of the optical specific measurement device 6 are likely to vary. In addition, the tip portion 11 of the metal needle 4 provided in plurality.
Wears due to repeated measurement, but the degree of wear differs for each metal needle 4 due to various factors, and the array pitch of the tip portions 11 deviates from the array pitch of the semiconductor elements 1 to be measured, or the height thereof deviates. It becomes like this. If only one metal needle 4 is used, the problem of variations occurring among a plurality of metal needles 4 can be avoided, but since the semiconductor device 1 to be measured must be measured one by one, the measurement time is extremely long. It becomes long and inefficient.

An object of the present invention is to provide a stable electrical connection with an electrode of a semiconductor element to be measured even if the measurement is repeated, and to prevent the influence of light shielding from being exerted on the semiconductor element when measuring optical characteristics. An object is to provide an optical characteristic measuring device.

[0010]

SUMMARY OF THE INVENTION According to the present invention, there is provided a protruding contact member having electrical conductivity for making electrical contact with an electrode of a semiconductor element, and the contact member is mechanically held on the surface of the semiconductor element. A holding member that is transparent to light in a wavelength range related to optical operation and that is made of a material having electrical insulation, penetrates through the holding member, and electrically connects the contact member and the measuring device, An electro-optical characteristic measuring device for a semiconductor element, comprising a conducting wire having a diameter of 200 μm or less. According to the present invention, the contact member held on the surface by the holding member comes into contact with the electrode of the semiconductor element, and the measuring device is electrically contacted via the conducting wire. Since the holding member is transparent to light in the wavelength range related to the optical operation of the semiconductor element and is made of an electrically insulating material, even if the holding member is arranged so as to cover the surface of the semiconductor element, it hinders measurement of optical characteristics. Does not mean Since the diameter of the conducting wire penetrating through the holding member is 10 μm or more and 200 μm or less, light shielding that gives fluctuation to the optical measurement result is not performed.

Further, according to the present invention, the material of the holding member is a flexible elastomer. According to the present invention, since the flexible elastomer is used as the material of the holding member, the contact member can flexibly contact the electrode of the semiconductor element. As a result, an unreasonable force is not applied from the contact member to the semiconductor element, and it is possible to reduce defects such as mechanical damage such as defective cracking of the semiconductor element or the semiconductor substrate or deformation of the contact electrode on the semiconductor element. be able to.

Further, according to the present invention, the plurality of contact members are arranged so as to be distributed in close proximity so that a plurality of contact members can contact the same electrode. According to the present invention, since a plurality of contact members are arranged in close proximity to each other so that they can contact the same electrode of the semiconductor element,
Reliable electrical contact can be made without the need for strict positioning.

Further, according to the present invention, the contact member is arranged so as to be simultaneously contactable with electrodes of a plurality of semiconductor elements arranged on a semiconductor substrate. According to the present invention, since the contact member can simultaneously contact the electrodes of the semiconductor elements arranged on the semiconductor substrate, the time required for the electrical connection to the plurality of semiconductor elements at the same time and the positioning is required. Can be shortened.

Further, according to the present invention, the contact members arranged in a range capable of contacting the electrodes of each of the semiconductor elements are a tip portion of the conducting wire to form a group, and the conducting wire of each group and the measuring device. And switching means for sequentially switching the electrical connection between and. According to the present invention, a plurality of semiconductor elements can be electrically connected at the same time, and the characteristics of each semiconductor element can be measured while individually switching. The contact member is the tip of each conducting wire, so it should be arranged closely.
A reliable electrical connection can be made.

[0015]

1 is a side view showing a measurement state of an embodiment of the present invention. The semiconductor element 21 to be measured is electrically connected to the power supply 22 and the electrical characteristic measuring device 23 via the contact member 24. The optical characteristics of the semiconductor device under test 21 are obtained by the light incident on the light receiving device 25. The output of the light receiving element 25 is input to the optical characteristic measuring device 26, and the optical measurement related to the light emitting operation of the semiconductor element 21 to be measured is performed. The contact member 24 is arranged on the surface of the holding member 27 and can contact the upper electrode 28 formed on the upper surface of the semiconductor element 21 to be measured. Semiconductor element to be measured 21
Are separated from the semiconductor substrate 29 only in the upper part and are not separated in the lower part.

The common electrical connection to the plurality of semiconductor devices 21 to be measured is made from the lower surface of the semiconductor substrate 29 to the stage 3
Through 0. For electrical connection to each semiconductor device 21 to be measured, a gold (Au) wire having a diameter of, for example, 30 μm penetrating through the holding member 27 is vertically embedded as a conductive wire 31 and is embedded, and protrudes from the surface of the holding member 24. It is performed by being electrically connected to the contact member 24. Holding member 27
Is a plate-like body of an insulating material that is optically transparent at least in the wavelength range of the light generated by the semiconductor device under test 21. The upper surface of the holding member 27 is made of ITO (Indium Tin Oxide), which is a mixture of indium oxide (In ₂ O ₃ ) with about 5% tin oxide.
Substrate 32 having a circuit formed of transparent electrodes such as
It is pressed against and electrically connected. As for the semiconductor device under test 21 determined to be defective as a result of the characteristic measurement, the holding member 24 and the like are moved after the measurement of a plurality of chips, and then the inker is operated based on the data stored in the memory. , Marking. In the subsequent process, it is possible to recognize that the product is defective by marking.

FIG. 2 shows a state in which the holding member 27 and the glass substrate 32 are placed on the semiconductor element 21 to be measured, and the contact member 24 makes an electrical connection with the upper electrode 28. Since the diameter of the conducting wire 31 is small, it does not block light unlike the body 12 of the metal needle 4 shown in FIG. 6, and the holding member 27 is also optically transparent, so that the light generated from the semiconductor element 21 to be measured is The characteristics can be accurately measured by the light receiving element 25 shown in FIG. On the glass substrate 32 of FIG. 1, the transparent electrode circuit pattern 33 made of ITO or the like is formed above the semiconductor element 31 to be measured.
Although the conductive line 31 and the contact member 24 of FIG. 1 are distributed under each transparent electrode circuit pattern 33, the illustration thereof is omitted in FIG. The transparent electrode circuit pattern 33 is
It is larger than the electrode area of the upper electrode 8 on the upper surface of the semiconductor element to be measured, and is formed as a common electrode for each conductive line 31. A lead-out circuit pattern 34 shown by hatching is formed around the transparent electrode circuit pattern 33, and the lead-out circuit pattern 34 is drawn out to the outside by utilizing a portion above the gap between the semiconductor elements 21 to be measured. Since the extraction circuit pattern 34 is formed in a portion that does not affect the optical characteristic measurement, it does not necessarily need to be transparent and can be formed of a metal such as copper having good conductivity.

FIG. 3 shows an arrangement state of the contact member 24 and the conducting wire 31 with respect to the semiconductor element 21 to be measured and the upper electrode 28. FIG. 3A shows a state in which the contact member 24 and the conducting wire 31 are arranged in a line over a wider area than the semiconductor element 21 to be measured and are arranged so as to form a matrix. FIG. 3B shows a random arrangement in which the contact members 24 and the conducting lines 31 are also randomly arranged in a wider area than the semiconductor device 21 to be measured, as represented by the distribution of fine dots. FIG. 3 (c)
Similarly, although the arrangement is random, the range is limited to above the upper electrode 28. Figure 3 (d) shows
Similarly, the state is shown in which the semiconductor elements 21 to be measured are arranged in a random arrangement according to the range. When the semiconductor device 21 to be measured is arranged in a wider range as shown in FIGS. 3A and 3B, the positioning accuracy is not always strict when the semiconductor devices 21 to be measured are individually measured. Even without it, electrical connection can be surely made. Figure 3 (c)
In the case of arranging in a range corresponding to the upper electrode 28 as shown in (4), it is possible to individually make electrical connection to the plurality of upper electrodes. As shown in FIG. 3D, the case where the semiconductor elements 21 are arranged so as to correspond to the semiconductor elements 21 to be measured is suitable for efficiently measuring the characteristics while simultaneously contacting a plurality of semiconductor elements 21 to be measured. Is.

In each of the above embodiments, the holding member 27 may be an optically transparent insulating material such as glass or synthetic resin, but it is better to use a soft elastomer such as silicon resin as the semiconductor to be measured. This is preferable because electrical connection can be surely made to the upper electrode 28 of the element 21. Such holding member 27 and contact member 2
For No. 4, resin of elastomer and a curing agent were added to a jig to which the gold wire was fixed to make it gel, and after slicing to a required thickness, the surface of the elastomer was etched to project a part of the gold wire from the surface. It can be formed and manufactured as the contact member 24. In addition, when the semiconductor device to be measured 21 is measured in a state where it is not separated from the semiconductor substrate 29, it is possible to suppress the occurrence of substrate cracking defects in the semiconductor substrate 29 which is relatively easily broken by an external force in terms of strength. For the same reason, if the electrical connection means using a soft elastomer is adopted not only for the upper surface of the semiconductor device to be measured 21 but also for the lower surface, the substrate cracking defect can be further reduced. In this case, the electrical connection on the lower surface does not have to correspond to the individual chips of the semiconductor device 21 to be measured, but can be a common electrode.

From the semiconductor substrate 29 to the semiconductor device 21 under test
The electrical characteristics and the optical characteristics are shortened by electrically switching the current supply to each of the semiconductor devices 21 to be measured while simultaneously making electrical contact with the plurality of semiconductor devices 21 to be measured without disconnecting them. It can be measured in time. Further, regarding the optical characteristics, the semiconductor element 2 to be measured
If a plurality of light receiving elements 25 arranged above 1 are distributed on the surface and the in-plane distribution of the light emission characteristics of each semiconductor element 21 to be measured can be measured, a current is individually supplied to the semiconductor element 21 to be measured. By using common wiring, it is possible to instantaneously measure the in-plane distribution of the light emission of the plurality of semiconductor devices 21 to be measured, and it is possible to efficiently determine the optical characteristics of the semiconductor substrate 29. If this is possible, in the conventional manufacturing process of the semiconductor device to be measured 21, after the epitaxial growth of the active layer or the like, the optical characteristics of the isolated portion of the device substrate before electrode formation are obtained by grooving grooves. Even for the "grooving test" that measures and inspects the condition of the substrate in the middle,
It can be performed without digging a groove, and the work can be simplified.

Although the light receiving element 25 needs to be aligned with the light emitting element to be measured in the same manner as the conventional one, the conventional alignment with the metal needle can be simplified by this embodiment. For example, by arranging the gold wires at a pitch of 50 μm, the alignment can be easily performed when the pitch of the semiconductor elements 21 to be measured is 300 μm and the diameter of the upper electrode 28 is 150 μm.

[0022]

As described above, according to the present invention, when measuring the electro-optical characteristics of a semiconductor element, a holding portion for electrically connecting a semiconductor element to be measured is formed of an optically transparent insulating material. By holding the contact member with the member,
Since the diameter of the conducting wire that penetrates through the holding member is 200 μm or less, it is possible to reduce variations due to light blocking in optical measurement and to accurately measure electrical characteristics and optical characteristics.

Further, according to the present invention, since the flexible elastomer is used as the material of the holding member, it is possible to reduce cracking defects of the semiconductor element substrate without applying excessive large pressure to the semiconductor element. .

Further, according to the present invention, since a plurality of contact members can contact the same electrode of the semiconductor element,
Even if the positioning accuracy is not necessarily strict, electrical connection can be surely made.

Further, according to the present invention, the plurality of semiconductor elements are separated from the semiconductor substrate because the contact members are arranged so that they can simultaneously contact the electrodes of the semiconductor elements arranged on the semiconductor substrate. Characteristic measurement can be performed efficiently in the absence of the condition.

Further, according to the present invention, it is possible to efficiently and individually measure the characteristics of a plurality of semiconductor elements that make electrical contact at the same time.

[Brief description of drawings]

FIG. 1 is a simplified side view showing a measurement state according to an embodiment of the present invention.

2 is a semiconductor device to be measured 21 in the measurement state of FIG.
FIG. 6 is a plan view of an electrical connection state with respect to FIG.

FIG. 3 is a simplified plan view showing an arrangement state of a contact member 24 and a conducting wire 31 of FIG.

FIG. 4 is a side view showing a schematic configuration of a conventional measuring device.

FIG. 5 is a perspective view showing an arrangement state of a semiconductor element to be measured which is an object of measurement.

FIG. 6 is a side view of a metal needle 4 used in a conventional measuring device.

7 is a plan view showing a state in which the metal needle 4 of FIG. 6 is used to electrically contact the semiconductor device 1 to be measured of FIG.

[Explanation of symbols]

 21 semiconductor element to be measured 22 power supply 23 electric characteristic measuring apparatus 24 contact member 25 light receiving element 26 optical characteristic measuring apparatus 27 holding member 28 upper electrode 29 semiconductor substrate 30 stage 31 conducting wire 32 glass substrate 33 transparent electrode circuit pattern 34 extraction circuit pattern

Claims (5)

[Claims] 1. A conductive protrusion-shaped contact member for making electrical contact with an electrode of a semiconductor element, and a contact member that is mechanically held on a surface and has a wavelength of a wavelength related to an optical operation of the semiconductor element. A holding member made of a material that is transparent to light in the range and has an electrical insulating property, and penetrates through the holding member to electrically connect the contact member and the measuring device, and has a diameter of 10 μm or more and 200 μm or less. An electro-optical characteristic measuring device for a semiconductor element, comprising a certain conducting wire. 2. The device for measuring electro-optical characteristics of a semiconductor device according to claim 1, wherein the material of the holding member is a flexible elastomer. 3. The electro-optical device according to claim 1, wherein a plurality of the contact members are arranged in close proximity so that a plurality of the contact members can contact the same electrode. Characteristic measuring device. 4. The contact member according to claim 1, wherein the contact member is arranged so as to be able to simultaneously contact electrodes of a plurality of semiconductor elements arranged on a semiconductor substrate. Electro-optical characteristic measuring device for semiconductor devices. 5. A contact member arranged in a range capable of contacting an electrode of each of the semiconductor elements forms a group which is a tip end portion of the conducting wire, and is provided between the conducting wire of each group and the measuring device. 5. An electro-optical characteristic measuring device for a semiconductor element according to claim 4, further comprising switching means for sequentially switching the electrical connection of the device.