TWI485371B - Inspection device - Google Patents
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- TWI485371B TWI485371B TW102114646A TW102114646A TWI485371B TW I485371 B TWI485371 B TW I485371B TW 102114646 A TW102114646 A TW 102114646A TW 102114646 A TW102114646 A TW 102114646A TW I485371 B TWI485371 B TW I485371B
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本發明是有關於一種檢測裝置，且特別是有關於一種晶片的檢測裝置。The present invention relates to a detecting device, and more particularly to a detecting device for a wafer.
發光二極體具有諸如壽命長、體積小、高抗震性、低熱產生及低功率消耗等優點，因此已被廣泛應用於家用及各種設備中的指示器或光源。近年來，發光二極體已朝高功率發展，因此其應用領域已擴展至道路照明、大型戶外看板、交通號誌燈及相關領域。在未來，發光二極體甚至可能成為兼具省電及環保功能的主要照明光源。The light-emitting diode has advantages such as long life, small volume, high shock resistance, low heat generation, and low power consumption, and thus has been widely used as an indicator or a light source in households and various devices. In recent years, light-emitting diodes have developed toward high power, so their applications have expanded to road lighting, large outdoor billboards, traffic lights and related fields. In the future, light-emitting diodes may even become the main source of illumination for both power saving and environmental protection functions.
在發光二極體晶片的生產流程中，包括許多測試步驟以測試產品的性能是否符合出廠規格，例如亮度的測試即為其中一種。以亮度的測試而言，會採用探針分別接觸發光二極體晶片的正負極以點亮發光二極體晶片，進一步獲得其亮度的資料。前述的測試方法會配合移動載台，將多個晶片設置在移動載台上以依序傳送各個晶片至探針處，然而此種測試方法一次僅能測出一個晶片的亮度，量測速率慢且產能也較低。In the production process of a light-emitting diode wafer, a number of test steps are included to test whether the performance of the product meets the factory specifications, for example, the test of brightness is one of them. In terms of brightness test, the probes are respectively contacted with the positive and negative electrodes of the LED chip to illuminate the LED chip, and further information on the brightness thereof is obtained. The foregoing test method cooperates with the mobile stage to place a plurality of wafers on the moving stage to sequentially transfer the respective wafers to the probes. However, the test method can only measure the brightness of one wafer at a time, and the measurement rate is slow. And the production capacity is also low.
本發明提供一種檢測裝置，其具有良好的檢測效率。The present invention provides a detecting device that has good detection efficiency.
本發明的一種檢測裝置，適用於接觸多個晶片以進行這些晶片的檢測，其中各晶片包括一第一電極以及一第二電極。檢測裝置包括一基板以及多個電極組。基板具有一配置表面，這些電極組配置於基板的配置表面上。各電極組包括一第一接墊以及一第二接墊，其中這些晶片與這些電極組對應設置，以使各晶片的第一電極與第二電極直接接觸同組電極組中的第一接墊與第二接墊。A detecting device of the present invention is adapted to contact a plurality of wafers for detecting the wafers, wherein each of the wafers includes a first electrode and a second electrode. The detecting device includes a substrate and a plurality of electrode groups. The substrate has a configuration surface, and the electrode groups are disposed on a disposition surface of the substrate. Each of the electrode sets includes a first pad and a second pad, wherein the wafers are disposed corresponding to the electrode groups such that the first electrode and the second electrode of each wafer directly contact the first pads of the same group of electrodes With the second pad.
在本發明的一實施例中，上述的基板為一透光基板。In an embodiment of the invention, the substrate is a transparent substrate.
在本發明的一實施例中，上述的檢測裝置更包括一收光單元，每一晶片具有一出光側，其中收光單元配置於晶片的出光側，以收集和記錄每一晶片的亮度資料。In an embodiment of the invention, the detecting device further comprises a light-receiving unit, each of the wafers has a light-emitting side, wherein the light-receiving unit is disposed on the light-emitting side of the wafer to collect and record the brightness data of each of the wafers.
在本發明的一實施例中，上述的收光單元為一太陽能板、一積分球或一光偵測器陣列。In an embodiment of the invention, the light collecting unit is a solar panel, an integrating sphere or a photodetector array.
在本發明的一實施例中，上述的基板包括多條第一導線與多條第二導線，這些第一導線連接至前述的第一接墊，且這些第二導線連接至前述的第二接墊。In an embodiment of the invention, the substrate includes a plurality of first wires and a plurality of second wires, the first wires are connected to the first pads, and the second wires are connected to the second connection pad.
在本發明的一實施例中，上述的檢測裝置更包括一控制器，前述的這些第一導線與這些第二導線電性連接至控制器，其中連接至同組電極組之第一接墊與第二接墊的第一導線與第二導 線構成一電路迴路，且控制器分別控制這些電路迴路以分別驅動這些晶片。In an embodiment of the invention, the detecting device further includes a controller, wherein the first wires and the second wires are electrically connected to the controller, wherein the first pads connected to the same group of electrodes are First lead and second lead of the second pad The lines form a circuit loop and the controller controls these circuit loops to drive the wafers separately.
在本發明的一實施例中，上述的這些電極組呈陣列排列。In an embodiment of the invention, the electrode groups described above are arranged in an array.
在本發明的一實施例中，上述的檢測裝置更包括一承載平台，配置於這些晶片的下方以承載這些晶片，其中這些晶片位在承載平台與基板的配置表面之間。In an embodiment of the invention, the detecting device further includes a carrying platform disposed under the wafers to carry the wafers, wherein the wafers are located between the carrying platform and the disposed surface of the substrate.
在本發明的一實施例中，上述的檢測裝置更包括一收光單元以及一反射元件層。晶片配置於收光單元與基板之間。反射元件層設置於基板相對於配置表面的一表面上。In an embodiment of the invention, the detecting device further includes a light collecting unit and a reflective element layer. The wafer is disposed between the light collecting unit and the substrate. The reflective element layer is disposed on a surface of the substrate relative to the arrangement surface.
在本發明的一實施例中，上述的這些第一接墊與這些第二接墊的材質包括金屬或透明導電材料。In an embodiment of the invention, the materials of the first pads and the second pads include a metal or a transparent conductive material.
本發明的一種檢測裝置，適用於接觸多個晶片以進行晶片的檢測，其中每一晶片包括一第一電極、一發光層以及一第二電極，且第一電極與第二電極分別位於發光層的相對二側。檢測裝置包括：一基板、多個接墊以及一承載平台。基板具有一配置表面。接墊配置於基板的配置表面上，其中晶片的第一電極與接墊對應設置，以使每一晶片的第一電極直接接觸對應的接墊。承載平台配置於晶片的下方以承載晶片，其中承載平台具有導電功能並接觸晶片的第二電極。A detecting device of the present invention is adapted to contact a plurality of wafers for detecting a wafer, wherein each of the wafers includes a first electrode, a light emitting layer and a second electrode, and the first electrode and the second electrode are respectively located in the light emitting layer The opposite side. The detecting device comprises: a substrate, a plurality of pads and a carrying platform. The substrate has a configuration surface. The pads are disposed on the arrangement surface of the substrate, wherein the first electrodes of the wafer are disposed corresponding to the pads such that the first electrodes of each wafer directly contact the corresponding pads. A carrier platform is disposed below the wafer to carry the wafer, wherein the carrier platform has a conductive function and contacts the second electrode of the wafer.
在本發明的一實施例中，上述的基板包括多條導線，且導線連接至接墊。In an embodiment of the invention, the substrate comprises a plurality of wires, and the wires are connected to the pads.
在本發明的一實施例中，上述的檢測裝置，更包括：一 控制器，導線電性連接至控制器之一端，承載平台電性連接至控制器的另一端。In an embodiment of the invention, the detecting device further includes: The controller is electrically connected to one end of the controller, and the carrying platform is electrically connected to the other end of the controller.
在本發明的一實施例中，上述的承載平台具有一高導電率的金屬薄膜，且金屬薄膜接觸晶片的第二電極。In an embodiment of the invention, the carrying platform has a high conductivity metal film, and the metal film contacts the second electrode of the wafer.
在本發明的一實施例中，上述的檢測裝置更包括一收光單元，配置於基板的上方，以收集和記錄每一晶片的亮度資料。In an embodiment of the invention, the detecting device further includes a light collecting unit disposed above the substrate to collect and record brightness data of each wafer.
在本發明的一實施例中，上述的收光單元為一太陽能板、一積分球或一光偵測器陣列。In an embodiment of the invention, the light collecting unit is a solar panel, an integrating sphere or a photodetector array.
基於上述，本發明的檢測裝置適用於檢測晶片，其中檢測裝置可對應多個晶片且針對每一晶片形成一獨立的電路迴路。Based on the above, the detection device of the present invention is suitable for detecting wafers, wherein the detection device can correspond to a plurality of wafers and form a separate circuit loop for each wafer.
因此，本發明的檢測裝置在檢測晶片時無須移動基板，可快速地檢測多個晶片，而達到良好的檢測效率並提升產能。Therefore, the detecting device of the present invention can detect a plurality of wafers quickly without detecting the need to move the substrate while detecting the wafer, thereby achieving good detection efficiency and increasing productivity.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
50、60‧‧‧晶片50, 60‧‧‧ wafer
51‧‧‧出光側51‧‧‧Lighting side
52、62‧‧‧第一電極52, 62‧‧‧ first electrode
54、64‧‧‧第二電極54, 64‧‧‧ second electrode
66‧‧‧發光層66‧‧‧Lighting layer
100、100b、200‧‧‧檢測裝置100, 100b, 200‧‧‧ detection devices
120、120’、210‧‧‧基板120, 120', 210‧‧‧ substrates
120a、120a’、212‧‧‧配置表面120a, 120a’, 212‧‧‧ configuration surface
120b’‧‧‧表面120b’‧‧‧ surface
122‧‧‧第一導線122‧‧‧First wire
124‧‧‧第二導線124‧‧‧Second wire
140‧‧‧電極組140‧‧‧electrode group
142‧‧‧第一接墊142‧‧‧First mat
144‧‧‧第二接墊144‧‧‧second mat
160、160b、250‧‧‧收光單元160, 160b, 250‧‧ ‧ light collection unit
170‧‧‧反射元件層170‧‧‧reflecting element layer
180、230‧‧‧承載平台180, 230‧‧‧ bearing platform
190、240‧‧‧控制器190, 240‧‧ ‧ controller
214‧‧‧導線214‧‧‧ wire
220‧‧‧接墊220‧‧‧ pads
232‧‧‧金屬薄膜232‧‧‧Metal film
圖1繪示為本發明的一實施例的一種檢測裝置的俯視示意圖。FIG. 1 is a schematic top plan view of a detecting device according to an embodiment of the invention.
圖2繪示為本發明待檢測的多個晶片的俯視示意圖。2 is a top plan view of a plurality of wafers to be inspected according to the present invention.
圖3繪示為圖1之檢測裝置在檢測晶片時的剖面示意圖。3 is a cross-sectional view showing the detecting device of FIG. 1 when detecting a wafer.
圖4繪示為圖1之檢測裝置在檢測晶片時的仰視示意圖。4 is a bottom view of the detecting device of FIG. 1 when detecting a wafer.
圖5繪示為本發明的另一實施例的一種檢測裝置在檢測晶片 時的剖面示意圖。FIG. 5 is a diagram showing a detecting device for detecting a wafer according to another embodiment of the present invention; FIG. Schematic diagram of the time.
圖6繪示為本發明之一實施例之一種檢測裝置在檢測晶片時的剖面示意圖。6 is a cross-sectional view showing a detecting device in detecting a wafer according to an embodiment of the present invention.
圖7繪示為圖6之檢測裝置的基板的仰視示意圖。7 is a bottom plan view of the substrate of the detecting device of FIG. 6.
圖1繪示為本發明的一實施例的一種檢測裝置的俯視示意圖。圖2繪示為本發明待檢測的多個晶片的俯視示意圖。請同時參考圖1與圖2，本實施例的檢測裝置100適用於接觸圖2中的多個晶片50以進行這些晶片50的檢測，其中各晶片50包括一第一電極52以及一第二電極54。檢測裝置100包括一基板120以及多個電極組140。基板120具有一配置表面120a，這些電極組140配置於基板120的配置表面120a上，且各電極組140包括一第一接墊142以及一第二接墊144。FIG. 1 is a schematic top plan view of a detecting device according to an embodiment of the invention. 2 is a top plan view of a plurality of wafers to be inspected according to the present invention. Referring to FIG. 1 and FIG. 2 simultaneously, the detecting apparatus 100 of the present embodiment is adapted to contact the plurality of wafers 50 of FIG. 2 for detecting the wafers 50, wherein each of the wafers 50 includes a first electrode 52 and a second electrode. 54. The detecting device 100 includes a substrate 120 and a plurality of electrode groups 140. The substrate 120 has a configuration surface 120a. The electrode groups 140 are disposed on the arrangement surface 120a of the substrate 120, and each of the electrode groups 140 includes a first pad 142 and a second pad 144.
圖3繪示為圖1之檢測裝置在檢測晶片時的剖面示意圖。在本實施例中，檢測裝置100在檢測晶片50時，是將基板120覆蓋在多個晶片50上，使配置表面120a上的電極組140接觸晶片50。值得注意的是，如圖3中所繪示，晶片50與電極組140對應設置，以使各晶片50的第一電極52與第二電極54直接接觸同組電極組140中的第一接墊142與第二接墊144。也就是說，多個晶片50的排列方式是對應這些電極組140在基板120上的排列方式。當基板120覆蓋在多個晶片50上時，這種一對一的排列方式 使得每一個晶片50都對應到一個電極組140。如此一來，檢測裝置100可利用基板120上的多個電極組140快速地檢測多個晶片50，進一步達到良好的檢測效率並提升產能。3 is a cross-sectional view showing the detecting device of FIG. 1 when detecting a wafer. In the present embodiment, when detecting the wafer 50, the detecting device 100 covers the substrate 120 on the plurality of wafers 50 such that the electrode group 140 on the arrangement surface 120a contacts the wafer 50. It should be noted that, as illustrated in FIG. 3, the wafer 50 is disposed corresponding to the electrode group 140 such that the first electrode 52 and the second electrode 54 of each wafer 50 directly contact the first pads in the same electrode group 140. 142 and second pad 144. That is to say, the arrangement of the plurality of wafers 50 corresponds to the arrangement of the electrode groups 140 on the substrate 120. This one-to-one arrangement when the substrate 120 is overlaid on a plurality of wafers 50 Each of the wafers 50 is made to correspond to one electrode group 140. In this way, the detecting device 100 can quickly detect the plurality of wafers 50 by using the plurality of electrode groups 140 on the substrate 120, thereby further achieving good detection efficiency and increasing productivity.
請參考圖3，在本實施例中，基板120的透光率大於90%，更佳地，基板120為透光基板。檢測裝置100更包括一收光單元160，其中每一晶片50具有一出光側51，而收光單元160配置於這些晶片50的出光側51，以收集和記錄各晶片50的亮度資料。這些亮度資料可以與晶片50的一標準資料做比對，以檢測出不符合標準的晶片50。在本實施例中，收光單元160可以是一太陽能板、一積分球或是一光偵測器陣列。在本實施例中，晶片50可以是發光二極體晶片，且這些發光二極體晶片發出相同顏色的光或不同顏色的光。此外，在本實施例中，第一接墊142與第二接墊144的材質包括金屬，例如是銅；或者是，透明導電材料，例如銦錫氧化物(Indium Tin Oxide，ITO)或是銦鋅氧化物(Indium Zinc Oxide，IZO)，於此並不加以限制。Referring to FIG. 3, in the embodiment, the transmittance of the substrate 120 is greater than 90%. More preferably, the substrate 120 is a transparent substrate. The detecting device 100 further includes a light collecting unit 160, wherein each of the wafers 50 has a light exiting side 51, and the light collecting unit 160 is disposed on the light emitting side 51 of the wafers 50 to collect and record the brightness data of each of the wafers 50. These brightness data can be compared to a standard data of the wafer 50 to detect wafers 50 that do not conform to the standard. In this embodiment, the light collecting unit 160 can be a solar panel, an integrating sphere or a photodetector array. In the present embodiment, the wafer 50 may be a light emitting diode wafer, and these light emitting diode wafers emit light of the same color or light of a different color. In addition, in this embodiment, the material of the first pad 142 and the second pad 144 includes a metal such as copper; or a transparent conductive material such as Indium Tin Oxide (ITO) or indium. Indium Zinc Oxide (IZO) is not limited herein.
此外，檢測裝置100可更包括一承載平台180，其中承載平台180配置於晶片50的下方以承載晶片50，其中晶片50位在承載平台180與基板120的配置表面120a之間，且固定於承載平台180上。In addition, the detecting device 100 may further include a carrying platform 180, wherein the carrying platform 180 is disposed under the wafer 50 to carry the wafer 50, wherein the wafer 50 is located between the carrying platform 180 and the disposed surface 120a of the substrate 120, and is fixed on the carrying On platform 180.
圖4繪示為圖1之檢測裝置在檢測晶片時的仰視示意圖。為了清楚表示所有構件，圖4省略了部分的構件。請參考圖4，在本實施例中，電極組140例如是呈陣列排列，為了對應電極組140 的排列方式，多個晶片50也例如是呈陣列排列，但並不以此為限。在本實施例中，基板120更包括多條第一導線122與多條第二導線124，其中這些第一導線122連接至這些第一接墊142，且這些第二導線124連接至這些第二接墊144。在此需說明的是，當檢測裝置100在檢測這些晶片50時，其中連接至同組電極組140之第一接墊142與第二接墊144的第一導線122與第二導線124可構成一電路迴路，而檢測裝置100則是利用此電路迴路達到檢測的目的。舉例而言，當電路迴路導通時，晶片50可被驅動而得知其規格資料。4 is a bottom view of the detecting device of FIG. 1 when detecting a wafer. In order to clearly show all the components, a part of the components is omitted in FIG. Referring to FIG. 4, in the embodiment, the electrode groups 140 are arranged in an array, for example, in order to correspond to the electrode group 140. The plurality of wafers 50 are also arranged in an array, for example, but are not limited thereto. In this embodiment, the substrate 120 further includes a plurality of first wires 122 and a plurality of second wires 124, wherein the first wires 122 are connected to the first pads 142, and the second wires 124 are connected to the second wires Pad 144. It should be noted that when the detecting device 100 is detecting the wafers 50, the first wires 122 and the second wires 124 connected to the first pads 142 and the second pads 144 of the same electrode group 140 may be configured. A circuit loop, and the detecting device 100 uses the circuit loop to achieve the purpose of detection. For example, when the circuit loop is turned on, the wafer 50 can be driven to know its specifications.
在此需說明的是，一個電極組140上的第一接墊142、第二接墊144與其連接的第一導線122、第二導線124構成一個單獨的一個電路迴路，且基板120上的各個電路迴路彼此電性絕緣。請參考圖4，詳細而言，本實施例的檢測裝置100更包括一控制器190，例如數位開關。這些第一導線122與這些第二導線124電性連接至控制器190，而連接至同組電極組140之第一接墊142與第二接墊144的第一導線122與第二導線124構成一電路迴路，且控制器190分別控制電路迴路以分別驅動晶片50。例如，在檢測的過程中，控制器190可控制電源的輸出程序以逐一地驅動每一個晶片50，如此一來，本實施例之檢測裝置100可逐一檢測晶片50以確保晶片50的可靠度。It should be noted that the first pad 142 and the second wire 124 connected to the first pad 142 and the second pad 144 of the electrode group 140 form a single circuit loop, and each of the substrates 120 The circuit loops are electrically insulated from one another. Referring to FIG. 4, in detail, the detecting apparatus 100 of the embodiment further includes a controller 190, such as a digital switch. The first wires 122 and the second wires 124 are electrically connected to the controller 190, and the first wires 122 and the second wires 124 connected to the first pads 142 and the second pads 144 of the same electrode group 140 are configured. A circuit loop, and controller 190 controls the circuit loops to drive wafers 50, respectively. For example, during the detection process, the controller 190 can control the output program of the power source to drive each of the wafers 50 one by one. Thus, the detecting device 100 of the present embodiment can detect the wafers 50 one by one to ensure the reliability of the wafer 50.
圖5繪示為本發明的另一實施例的一種檢測裝置在檢測晶片時的剖面示意圖。本實施例沿用前述實施例的元件標號與部 分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例，本實施例不再重複贅述。請參考圖5，本實施例的檢測裝置100b與圖3之檢測裝置100主要的差異是在於：本實施例的收光單元160b配置於承載平台180的下方，且承載平台180例如為透明材質，其中晶片50配置於收光單元160b與基板120’之間。此外，本實施例的檢測裝置100b更包括一反射元件層170，其中反射元件層170配置於基板120’相對於配置表面120a’的一表面120b’上。換言之，收光單元160b亦可配置於晶片50之出光側51的背面，藉由反射元件層170的反射將晶片50所發出的光線反射至收光單元160b，而使收光單元160b收集和記錄每一晶片50的亮度資料。FIG. 5 is a cross-sectional view showing a detecting device in detecting a wafer according to another embodiment of the present invention. This embodiment follows the component numbers and parts of the foregoing embodiments. The same reference numerals are used to denote the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the detailed description is not repeated herein. Referring to FIG. 5 , the main difference between the detecting device 100 b of the present embodiment and the detecting device 100 of FIG. 3 is that the light receiving unit 160 b of the present embodiment is disposed under the carrying platform 180 , and the carrying platform 180 is, for example, a transparent material. The wafer 50 is disposed between the light receiving unit 160b and the substrate 120'. In addition, the detecting device 100b of the present embodiment further includes a reflective element layer 170, wherein the reflective element layer 170 is disposed on a surface 120b' of the substrate 120' with respect to the arrangement surface 120a'. In other words, the light-receiving unit 160b can also be disposed on the back surface of the light-emitting side 51 of the wafer 50, and the light emitted by the wafer 50 is reflected by the reflection of the reflective element layer 170 to the light-receiving unit 160b, so that the light-receiving unit 160b collects and records. Luminance data for each wafer 50.
圖6繪示為本發明之一實施例之一種檢測裝置在檢測晶片時的剖面示意圖。圖7繪示為圖6之檢測裝置的基板的仰視示意圖。為了方便說明起見，圖7中省略繪示部分構件。請先參考圖6，本實施例之檢測裝置100c適用於接觸多個晶片60以進行晶片60的檢測，其中每一晶片60包括一第一電極62、一發光層66以及一第二電極64，且第一電極62與第二電極64分別位於發光層66的相對二側。意即，本實施例之晶片60為一垂直式晶片。檢測裝置200包括一基板210、多個接墊220以及一承載平台230。基板210具有一配置表面212。接墊220配置於基板210的配置表面212上，其中晶片60的第一電極62與接墊220對應設置，以 使每一晶片60的第一電極62直接接觸對應的接墊220。承載平台230配置於晶片60的下方以承載晶片60，其中承載平台230具有導電功能並接觸晶片60的第二電極64。6 is a cross-sectional view showing a detecting device in detecting a wafer according to an embodiment of the present invention. 7 is a bottom plan view of the substrate of the detecting device of FIG. 6. For convenience of explanation, some of the members are omitted in FIG. Referring to FIG. 6 , the detecting device 100 c of the present embodiment is adapted to contact a plurality of wafers 60 for detecting the wafer 60 . Each of the wafers 60 includes a first electrode 62 , a light emitting layer 66 , and a second electrode 64 . The first electrode 62 and the second electrode 64 are respectively located on opposite sides of the light emitting layer 66. That is, the wafer 60 of the present embodiment is a vertical wafer. The detecting device 200 includes a substrate 210, a plurality of pads 220, and a carrying platform 230. The substrate 210 has a configuration surface 212. The pad 220 is disposed on the disposed surface 212 of the substrate 210, wherein the first electrode 62 of the wafer 60 is disposed corresponding to the pad 220 to The first electrode 62 of each wafer 60 is brought into direct contact with the corresponding pad 220. The carrier platform 230 is disposed below the wafer 60 to carry the wafer 60, wherein the carrier platform 230 has a conductive function and contacts the second electrode 64 of the wafer 60.
更具體來說，請同時參考圖6與圖7，在本實施例中，基板210包括多條導線214，且導線214連接至接墊220。再者，本實施例之檢測裝置200更包括一控制器240，其中導線214電性連接至控制器240之一端，而承載平台230電性連接至控制器240的另一端。此處，承載平台230具有一高導電率的金屬薄膜232，而使其具有導電功能，其中金屬薄膜232接觸晶片60的第二電極64。此外，本實施例之檢測裝置200可更包括一收光單元250，其中收光單元250配置於基板210的上方，以收集和記錄各晶片60的亮度資料。這些亮度資料可以與晶片60的一標準資料做比對，以檢測出不符合標準的晶片60。在本實施例中，收光單元250可以是一太陽能板、一積分球或是一光偵測器陣列。More specifically, please refer to FIG. 6 and FIG. 7 at the same time. In this embodiment, the substrate 210 includes a plurality of wires 214, and the wires 214 are connected to the pads 220. Furthermore, the detecting device 200 of the embodiment further includes a controller 240, wherein the wire 214 is electrically connected to one end of the controller 240, and the carrying platform 230 is electrically connected to the other end of the controller 240. Here, the carrier platform 230 has a high conductivity metal film 232 which has a conductive function, wherein the metal film 232 contacts the second electrode 64 of the wafer 60. In addition, the detecting device 200 of the embodiment may further include a light collecting unit 250, wherein the light collecting unit 250 is disposed above the substrate 210 to collect and record the brightness data of each of the wafers 60. These brightness data can be compared to a standard data of wafer 60 to detect wafer 60 that does not conform to the standard. In this embodiment, the light collecting unit 250 can be a solar panel, an integrating sphere or a photodetector array.
需說明的是，在本實施例中並不限定承載平台230的結構型態，雖然此處所提及之承載平台230具體化為一具有高導電率的金屬薄膜232，而使其具有導電功能。但於其他未繪示的實施例中，承載平台亦可為一金屬塊，意即承載平台本身即具有導電功能，且無須設置金屬薄膜或線路層。上述技術仍屬於本發明可採用的技術方案，不脫離本發明所欲保護的範圍。It should be noted that, in this embodiment, the structural form of the carrying platform 230 is not limited, although the carrying platform 230 mentioned herein is embodied as a metal film 232 having high conductivity, so that it has a conductive function. . However, in other embodiments not shown, the carrying platform can also be a metal block, that is, the carrying platform itself has a conductive function and does not need to be provided with a metal film or a circuit layer. The above-mentioned techniques are still within the scope of the invention as claimed.
當檢測裝置200在檢測這些晶片60時，一電流(未繪示)由控制器240依序經由導線214、接墊220、晶片60的第一電極 62、發光層66、第二電極64、承載平台230而回到控制器240，以形成一迴路，而檢測裝置200則是利用此電路迴路達到檢測的目的。舉例而言，當電路迴路導通時，晶片60可被驅動而得知其規格資料。此外，由於控制器240可分別控制電路迴路以分別驅動晶片60。例如，在檢測的過程中，控制器240可控制電源的輸出程序以逐一地驅動每一個晶片60，如此一來，本實施例之檢測裝置200可逐一檢測晶片60以確保晶片60的可靠度。When the detecting device 200 is detecting the wafers 60, a current (not shown) is sequentially passed by the controller 240 via the wires 214, the pads 220, and the first electrodes of the wafer 60. 62. The illuminating layer 66, the second electrode 64, and the carrying platform 230 are returned to the controller 240 to form a loop, and the detecting device 200 uses the circuit loop to achieve the purpose of detecting. For example, when the circuit loop is turned on, the wafer 60 can be driven to know its specifications. Additionally, controller 240 can control the circuit loops to drive wafers 60, respectively. For example, during the detection process, the controller 240 can control the output program of the power source to drive each of the wafers 60 one by one. Thus, the detecting device 200 of the present embodiment can detect the wafers 60 one by one to ensure the reliability of the wafer 60.
綜上所述，由於本發明的檢測裝置可對應多個晶片且針對每一晶片形成一獨立的電路迴路，因此檢測裝置無須移動基板即可快速地檢測晶片，可達到良好的檢測效率並提升產能。再者，本發明的檢測裝置可更透過收光單元來紀錄各晶片的規格資料，其中這些規格資料可以與晶片的一標準資料做比對，以檢測出不符合標準的晶片。此外，本發明的檢測裝置可更透過控制器以分別驅動每一個晶片，如此一來，可逐一檢測晶片以有效確保晶片的可靠度。據此，本發明的檢測裝置可快速且精確地檢測晶片，進而增加產能。In summary, since the detecting device of the present invention can correspond to a plurality of wafers and form a separate circuit loop for each wafer, the detecting device can quickly detect the wafer without moving the substrate, thereby achieving good detection efficiency and increasing productivity. . Furthermore, the detecting device of the present invention can further record the specification data of each wafer through the light-receiving unit, wherein the specification data can be compared with a standard data of the wafer to detect a wafer that does not conform to the standard. In addition, the detecting device of the present invention can further drive each of the wafers through the controller, so that the wafers can be inspected one by one to effectively ensure the reliability of the wafer. Accordingly, the detecting device of the present invention can detect wafers quickly and accurately, thereby increasing productivity.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
50‧‧‧晶片50‧‧‧ wafer
51‧‧‧出光側51‧‧‧Lighting side
52‧‧‧第一電極52‧‧‧First electrode
54‧‧‧第二電極54‧‧‧second electrode
100‧‧‧檢測裝置100‧‧‧Detection device
120‧‧‧基板120‧‧‧Substrate
120a‧‧‧配置表面120a‧‧‧Configuring surface
140‧‧‧電極組140‧‧‧electrode group
142‧‧‧第一接墊142‧‧‧First mat
144‧‧‧第二接墊144‧‧‧second mat
160‧‧‧收光單元160‧‧‧Lighting unit
180‧‧‧承載平台180‧‧‧bearing platform
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| TW201216391A (en) * | 2010-10-11 | 2012-04-16 | Ind Tech Res Inst | Detection method and detection device for LED chips on wafer and transparent probe card thereof |
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| JPH09246599A (en) * | 1996-03-08 | 1997-09-19 | Sharp Corp | Apparatus for measuring electrooptic characteristic |
| TW200623296A (en) * | 2004-12-27 | 2006-07-01 | Advanced Semiconductor Eng | Method for wafer-level testing photoelectric chips |
| US20060226848A1 (en) * | 2005-03-30 | 2006-10-12 | Youngtek Electronics Corporation | Mass-production LED test device for mass production |
| TW201216391A (en) * | 2010-10-11 | 2012-04-16 | Ind Tech Res Inst | Detection method and detection device for LED chips on wafer and transparent probe card thereof |
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