JP2012227201A - Inspection device and inspection method for semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem that, when an integration hemisphere is used to measure the total light flux of a light source such as an LED element and the like, because the measurement is performed by arranging the light source to an opening of a planar mirror one by one, throughput is low, and thus, it is not suitable for total inspection in mass production.SOLUTION: An inspection device has an integration hemisphere 11, an optical detector 12, a probe card 13, and an XYZ table 14. An aggregate substrate 17 in which LED elements 30 are coupled and arranged is arranged to an opening at the center part of the integration hemisphere 11, and the respective LED elements 30 are lightened individually by the probe card 13 attached to the XYZ table 14 to measure the total light flux. At this time, a plurality of probes 13a are provided to the probe card 13. The probe card 13 is simultaneously connected with the plurality of LED elements 30 via the probes 13a.

Description

  The present invention relates to an inspection apparatus and an inspection method for a semiconductor light emitting device in which the throughput of total luminous flux measurement for the semiconductor light emitting device is improved.

  When shipping semiconductor light-emitting elements (hereinafter referred to as LED elements unless otherwise noted), it is often the case that the electrical characteristics of all LED elements are measured and limited optical characteristic inspections are performed. The optical characteristic inspection is, for example, a method for measuring luminance and chromaticity at a specific azimuth angle. In contrast, the product specifications usually show the total luminous flux of the LED element measured using an integrating sphere. However, since the total luminous flux measurement has a low throughput, it is a sampling inspection in mass production.

  Measurement using an integrating sphere is as follows. First, a light source to be measured is placed in an integrating sphere having a light diffusing material applied to the inner wall, and the light source to be measured is turned on. The luminous flux emitted from the light source to be measured is multiple-reflected by the light diffusing material, and the light distribution characteristics of the light source to be measured are integrated to make the inner wall have uniform illuminance. The illuminance is measured with a light receiver connected to an integrating sphere. This measured value is compared with the output of a standard total luminous flux bulb with a known total luminous flux to determine the total luminous flux of the light source to be measured.

  This measuring method must be arranged one by one in the integrating sphere each time the light source to be measured is measured, and the throughput is low, so that it cannot be applied to 100% inspection in mass production as described above. If the light source to be measured is placed in a jig installed outside the integrating sphere, and the total light flux of the light source to be measured is guided into the integrating sphere from the jig using an optical fiber, the throughput will be improved to some extent. Man-hours increase because of storage.

  In the above method, since the light source to be measured is accommodated in the container every time the total luminous flux is measured, the throughput is deteriorated. In such a case, when the light source to be measured emits light only in one direction, using the integrating hemisphere makes it easy to install the light source to be measured (Patent Document 1). Therefore, a flux meter using an integrating hemisphere will be described with reference to FIG.

  FIG. 4 is a cross-sectional view of a photometer drawn as passing through the center of the integrating hemisphere 2, which is a copy of FIG. This luminous meter includes an integrating hemisphere 2 in which a light diffusing material 1 is applied to a hemispherical inner wall, and a photodetector 6 having a light receiving window on the inner hemisphere of the integrating hemisphere 2. Further, the plane mirror 3 is combined so as to pass through the center of curvature of the integrating hemisphere 2 and cover the opening of the integrating hemisphere 2. An opening 5 is provided at the center of the plane mirror 3 so that the light source 4 to be measured can be installed. The light source 6 to be measured is fixed to the opening 5 with a lighting jig 8, and the light source 6 to be measured is turned on to measure the total luminous flux. The direct light from the light source 4 to be measured toward the light detector 6 is blocked by the light shielding plate 7.

  At this time, the flat mirror 3 and the integrating hemisphere 2 realize a state in which the measured light source 4 is lit in the space in the integrating sphere without the lighting jig 8 or the support. Since half of the light source 4 to be measured is outside the integration space, that is, outside the plane mirror 3, it is only necessary to place the light source 4 to be measured in the opening 5, and it is housed in the container as described above. There is no process. At the same time, the heat of the light source 4 to be measured can be emitted outside the integrating hemisphere 2 with an appropriate heat sink or the like.

JP-A-6-167388 (FIG. 1)

  In the method using an integrating hemisphere as shown in Patent Document 1, LED elements are arranged one by one in the opening of the plane mirror every time the total luminous flux is measured. If it is attempted to introduce it into a mass production line in this way, the conveyance system becomes complicated and a large improvement in throughput cannot be expected.

  In view of these problems, an object of the present invention is to provide an inspection apparatus and an inspection method in which the LED elements can be easily conveyed while efficiently measuring the total luminous flux of all the LED elements in a mass production line.

In order to solve the above problems, a semiconductor light emitting device inspection method of the present invention is a semiconductor light emitting device inspection method in which a light beam emitted from a semiconductor light emitting element is uniformly measured by a light diffusion material.
A set substrate in which a plurality of the semiconductor light emitting elements are arranged and connected is set near the center of curvature of the integrating hemisphere or around the integrating sphere,
The probe of the probe card is brought into contact with the semiconductor light emitting element of the collective substrate,
The semiconductor light emitting elements are caused to emit light sequentially, and the total luminous flux of each semiconductor light emitting element is measured.

In order to solve the above problems, a semiconductor light-emitting device inspection apparatus of the present invention is a semiconductor light-emitting device inspection device that uniformly measures a light beam emitted from a semiconductor light-emitting element with a light diffusion material.
An integrating hemisphere formed at the center of curvature, or an integrating sphere formed at the periphery, an opening for arranging a collective substrate in which a plurality of semiconductor light emitting elements are arranged and connected; and
The photodetector attached to the integrating hemisphere or integrating sphere;
A movable base,
A probe card attached to the movable base and provided with a plurality of probes;
Means for moving the movable base to electrically connect the probe of the probe car with the plurality of semiconductor light emitting elements on the collective substrate, and individually lighting the semiconductor light emitting elements;
It is characterized by providing.

  It is preferable that after the probe card contacts a partial area of the collective substrate, it contacts another area.

  The inspection apparatus for a semiconductor light emitting device according to the present invention uses a collective substrate on which a large number of semiconductor light emitting devices are connected and arranged as a measurement target. Once this collective substrate is installed in the integrating hemisphere or the opening of the integrating sphere, the probe card attached to the movable base moves. The total luminous flux of the light emitting element is measured.

  At this time, the plurality of probes included in the probe card are electrically connected to the plurality of semiconductor light emitting elements included in the collective substrate. When the first LED element is turned on and the total luminous flux is measured in this state, the second LED element is turned on and the total luminous flux is measured while the probe card probe is in contact with the collective substrate. When the measurement of all the LED elements connected to the probe of the probe card is completed by repeating this, the probe card is moved to the second area of the collective substrate using the movable table, and the same measurement as described above is repeated.

  As described above, the semiconductor light-emitting device inspection apparatus according to the present invention can simplify the transportation related to the LED elements and further improve the throughput by reducing the number of times the probe card is moved.

  Similarly, the inspection method for a semiconductor light emitting device of the present invention uses a collective substrate on which a large number of semiconductor light emitting devices are arranged as a measurement target. When the collective substrate is installed in the integrating hemisphere or the opening of the integrating sphere, the probe of the probe card is brought into contact with the first region of the collective substrate. At this time, the plurality of probes included in the probe card are electrically connected to the plurality of semiconductor light emitting elements included in the first region. When the first LED element is turned on and the total luminous flux is measured in this state, the second LED element is turned on and the total luminous flux is measured while the probe card probe is in contact with the first region of the collective substrate. . This is repeated to measure the total luminous flux of all the LED elements included in the first region. When this is completed, the probe card is moved to the second area of the collective substrate and the same measurement as described above is repeated.

  As described above, the inspection method of the semiconductor light emitting device of the present invention can simplify the transportation related to the LED element and further improve the throughput by reducing the number of times the probe card is moved.

Explanatory drawing of the test | inspection system in 1st Embodiment of this invention. Explanatory drawing of the test | inspection system concerning the probe card of FIG. Explanatory drawing of the test | inspection system in 2nd Embodiment of this invention. Explanatory drawing of the inspection system in a prior art example.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the drawings, the same or corresponding elements are denoted by the same reference numerals, and redundant description is omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.
(First embodiment)

  An inspection apparatus according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is an explanatory diagram of an inspection system according to this embodiment. The inspection system shown in FIG. 1 includes a control block 20 indicated by a dotted line together with an integrating hemisphere 11, a photodetector 12, a probe card 13, and an XYZ table 14 (movable table).

  The integrating hemisphere 11 is coated with a light diffusion material 15 on the inner surface, and a photodetector 12 is attached to the upper right part in the figure. A flat mirror 16 is attached so as to close the opening of the integrating hemisphere 11. The lower surface of the flat mirror 16 is a mirror surface, and the integrating hemisphere 11 is equivalent to an integrating sphere. The flat mirror 16 has an opening at the center, and a collective substrate 17 in which a large number of LED elements are connected and arranged is disposed. A light shielding plate 18 is attached to the lower part of the plane mirror 16, and direct light from the LED elements included in the collective substrate 17 toward the photodetector 12 is blocked by the light shielding plate 18.

  The probe card 13 is attached to the lower surface of the XYZ table 14 and includes a large number of probes 13a (also referred to as probes). When the XYZ table 14 is lowered and the probe 13 a of the probe card 13 touches the upper surface of the collective substrate 17, many probes 13 a included in the probe card 13 are electrically connected to many LED elements included in the collective substrate 17. To do.

The control block 20 includes an XYZ table control block 21, a lighting control block 22, a measurement control block 23 and a central control block 24. The XYZ table control block 21 controls the operation of the XYZ table 14 in the vertical and horizontal directions. The lighting control block 22 supplies a current to one LED element included in the collective substrate 17 via a pair of probe 13 a included in the probe card 13 to light this LED element. At this time, the voltage between the probes 13a is also measured. The measurement control block 23 supplies power to the photodetector 12 and receives measurement data from the photodetector 12. The central control block 24 exchanges control signals and data with the XYZ table control block 21, the lighting control block 22, and the measurement control block 23, and controls the operation of the entire inspection system.

  Next, the inspection method of this embodiment will be described with reference to the inspection system of FIG. First, the collective substrate 17 is arranged at the center of curvature of the integrating hemisphere 11, that is, at the opening of the plane mirror 16. Subsequently, a plurality of probes 13 a included in the probe card 13 are brought into contact with the first region of the collective substrate 17 using the XYZ table 14. The area of the collective substrate 17 corresponds to one section of the plane where the LED elements are arranged and connected, and each section is composed of a plurality of LED elements to which the probe 13a of the probe card 13 is connected simultaneously. A predetermined current is supplied from the lighting control block 22 to the first LED element included in the first region via the probe 13a. Since the first LED element is turned on, the illuminance is measured using the photodetector 12 together with the electrical characteristics. Based on the data obtained from the standard light source in advance, the control block 20 converts the total luminous flux from this illuminance and stores it together with the coordinates of the LED elements.

  After measuring the total luminous flux of the first LED element, the lighting control block 22 switches the pair consisting of the probe 13a while the probe card 13 is fixed, and supplies current to the second LED element. The illuminance is measured in the same manner as in to obtain the total luminous flux.

  This is repeated and all LED elements included in the first region are measured. When this measurement is completed, the XYZ table 14 is raised, the probe card 13 is moved away from the collective substrate 17, and the probe card 13 is moved to the second region of the collective substrate 17. Then, the XYZ table 14 is lowered, the probe 13a of the probe card 13 is brought into contact with the collective substrate 17, and the total luminous flux of the LED elements included in the second area is measured as in the first area. Further, the same operation is performed on other regions of the collective substrate 17 to measure the total luminous flux of all the LED elements included in the collective substrate 17. The control block 20 creates a characteristic map based on the measurement data and the coordinates of the LED elements.

  Thereafter, the collective substrate 17 is replaced and the same process is repeated. Since the collective substrate 17 includes a large number of LED elements, replacement is not a heavy load even if it is a manual operation. A relatively simple transport system is sufficient for automatic supply. Since the electrode of the LED element is about several hundred μm square, the probe card 13 can be aligned based on the outer shape of the collective substrate 17. In addition, it is preferable to use image recognition for the alignment because the alignment accuracy is improved.

  Next, the relationship among the collective substrate 17, the probe card 13, and the lighting control block 22 in this embodiment will be described in more detail with reference to FIG. FIG. 2 is an explanatory diagram of an inspection system related to the probe card 13 of FIG. Note that FIG. 1 is shown upside down. Therefore, the probe card 13 is under the collective substrate 17. In general, the collective substrate 17 is often about 10 cm square, and at this time, several hundred to several thousand LED elements are connected and arranged on the collective substrate 17. In FIG. 2, for the sake of simplicity, the cross section of the collective substrate 17 is shown as including three LED elements 30. The individual LED elements 30 have a width A, and can be obtained by cutting the aggregate substrate 17 with a blade having a width B. In order to simplify the explanation, the second region described in FIG. 1 is omitted.

For each LED element 30, two electrodes 35 are formed on the upper surface of the plate member 38, and two electrodes 37 are formed on the lower surface, and the electrodes 35 and 37 are connected by a through hole 36. These electrodes 35 (or electrodes 37) correspond to a cathode and an anode. An LED die 33 having a semiconductor layer including a light emitting layer on the lower surface of the sapphire substrate is flip-chip mounted on the electrode 35, and the electrode (not shown) of the LED die 33 and the electrode 35 are connected via bumps 34. ing. The surfaces of the LED die 33, the electrode 35, and the plate material 38 are sealed with a sealing resin 32. Further, the reflective resin 31 surrounds the side surface of the sealing resin 32. When the reflective resin 31 is cut along the dotted line, a desired LED element 30 is obtained.

  The number of the probes 13 arranged on the upper surface of the probe card 13 is about several tens to 100 from the balance between cost and performance, but in FIG. 2, only six are shown for explanation. The pitch of the pair of probes 13 a is equal to the arrangement pitch a of the LED elements 30 included in the collective substrate 17. In this way, the plurality of pairs of probes 13 a are connected simultaneously with the electrode pairs of the LED elements 30. The probe 13a has a spring property in the vertical direction, but is omitted from FIG.

  One probe 13a included in the pair of probe 13a is connected to one common wiring. On the other hand, the other probe 13a included in the pair of probes 13a is connected to one terminal of the switches 41, 42, and 43. The other terminals of the switches 41, 42 and 43 are connected to the other common wiring. The constant current source 44 and the voltmeter 45 are inserted between one common wiring and the other common wiring. The switches 41, 42, 43, the constant current source 44 and the voltmeter 45 are included in the lighting control block 22.

In the inspection method of this embodiment, first, the electrode 37 of the collective substrate 17 and the probe 13a included in the probe card 13 are brought into contact. Subsequently, the switch 41 is turned on to apply a predetermined current to the LED element 30 (first semiconductor light emitting element) on the left side of the drawing. Since the LED element 30 emits light at this time, the total luminous flux is measured as described in FIG. At the same time, the voltage between the electrodes 37 is measured by the voltmeter 45. This voltage is called a forward voltage of the LED element 30, and several voltage value ranges (referred to as ranks) are set in advance, and may be ranked according to the voltage value indicated by the LED element 30. When the forward voltage and the total luminous flux are measured, the switch 41 is opened and the switch 42 is turned on. Similarly to the LED element 30 on the left of the figure, a current is applied to the LED element 30 (second semiconductor light emitting element) in the center of the figure, and the same measurement is performed. Thereafter, the measurement is repeated for all the LED elements 30 connected to the probe 13a of the probe card 13 in the same step. Although not drawn in FIG. 2, when the measurement of the LED elements 30 included in the first region is completed, the probe card 13 is moved and the LED elements 30 in the second region of the collective substrate 17 are measured.
(Second Embodiment)

  In the first embodiment, utilizing the fact that the collective substrate 17 emits light on one surface and can be electrically connected on the other surface, the other surface in the opening provided in the center of the flat mirror 16 covering the opening of the integrating hemisphere 11 is used. And the collective substrate 17 was disposed. At the same time, since the collective substrate 17 includes a large number of LED elements 30, the number of installations can be greatly reduced, thereby simplifying the transport of the collective substrate 17 related to the LED elements 30. Further, the plurality of probes 13a included in the probe card 13 are simultaneously connected to the plurality of LED elements 30 included in the collective substrate 17, and at this time, the switches 41 to 43 are switched to apply current to the individual LED elements 30 to light them. Since the mechanical movement is extremely small, the inspection speed can be increased. However, in the case of a light source that emits light only at the top, such as the LED element 30, when measuring the total luminous flux by exposing the non-light emitting side of the collective substrate 17 to the outside, an integrating sphere may be used instead of the integrating hemisphere 11. As an example using an integrating sphere, an inspection system according to a second embodiment of the present invention will be described with reference to FIG.

  FIG. 3 is an explanatory diagram of an inspection system according to the second embodiment of the present invention. The difference between the inspection system of the first embodiment shown in FIG. 1 and the inspection system of FIG. 3 is that the integrating hemisphere 11 including the flat mirror 16 and the like in FIG. 1 is replaced with the integrating sphere 51 in FIG. The integrating sphere 51 and the collective substrate 17 are shown in cross section. The integrating sphere 51 is coated with a light diffusing material 52 on its inner surface, and the photodetector 12 is attached to the side. The upper part of the integrating sphere 51 is open, and the collective substrate 17 is disposed here. The correction coefficient for converting the output of the photodetector 12 into the total luminous flux is different from that of the inspection system of the first embodiment, but the other is the same in the first embodiment and the second embodiment.

  In the first and second embodiments, the XYZ table 21 is used as the movable table. The movable table is not limited to the XYZ table, and may be an XY table having a two-dimensional movable range. In this case, the collective substrate 17 rises in FIGS. 1 and 3, and the probe 13 a included in the probe card 13 and the electrode of the LED element included in the collective substrate 17 are brought into contact with each other. Further, the illuminance incident on the photodetector 12 may change depending on the position of the LED element 30 on the collective substrate 17. In this case, it is preferable to correct the illuminance or the total luminous flux based on the arrangement position of the individual LED elements 30 on the collective substrate 17.

11 ... Integral hemisphere,
12 ... photodetector
13 ... Probe card,
13a ... probe,
14 ... XYZ table (movable stand),
15, 52 ... Light diffusing material,
16 ... plane mirror,
17 ... Collective board,
18 ... light shielding plate,
20 ... control block,
21 ... XYZ table control block,
22 ... lighting control block,
23: Measurement control block,
24 ... Central control block,
30 ... LED element (semiconductor light emitting element),
31 ... reflective resin,
32 ... sealing resin,
33 ... LED die,
34 ... Bump,
35, 37 ... electrodes,
36 ... through hole,
38 ... Plate material,
41, 42, 43 ... switches,
44 ... constant current source,
45 ... Voltmeter,
51 ... Integral sphere.

Claims (3)

In an inspection method of a semiconductor light emitting device for measuring a light beam emitted from a semiconductor light emitting element by making it uniform with a light diffusing material,
A set substrate in which a plurality of the semiconductor light emitting elements are arranged and connected is set near the center of curvature of the integrating hemisphere or around the integrating sphere,
The probe of the probe card is brought into contact with the semiconductor light emitting element of the collective substrate,
A method for inspecting a semiconductor light-emitting device, wherein the semiconductor light-emitting elements are caused to emit light sequentially to measure the total luminous flux of each semiconductor light-emitting element. In an inspection apparatus for a semiconductor light-emitting device that uniformly measures a light beam emitted from a semiconductor light-emitting element with a light diffusion material,
An integrating hemisphere formed at the center of curvature, or an integrating sphere formed at the periphery, an opening for arranging a collective substrate in which a plurality of semiconductor light emitting elements are arranged and connected; and
The photodetector attached to the integrating hemisphere or integrating sphere;
A movable base,
A probe card attached to the movable base and provided with a plurality of probes;
Means for moving the movable base to electrically connect the probe of the probe car with the plurality of semiconductor light emitting elements on the collective substrate, and individually lighting the semiconductor light emitting elements;
An inspection apparatus for a semiconductor light emitting device, comprising:   The inspection apparatus for a semiconductor light-emitting device according to claim 2, wherein the probe card contacts a part of the collective substrate and then contacts another area.