TWI481830B - Optical test device - Google Patents

Description

Optical test device

The present invention relates to a plurality of semiconductor devices which are formed in a matrix on a semiconductor wafer, or a plurality of semiconductor devices (wafers) to which a bonding tape is adhered to the other surface in a state of being cut from a semiconductor wafer. An optical test device for optical testing of the unit.

Previously, in order to properly perform an inspection or optical inspection of a semiconductor device, such as an operation test of an LED chip, the probe is brought into contact with an electrode pad of each LED chip to operate the LED chip, thereby checking the electrical characteristics and output of the LED chip at this time. The characteristics of light.

Fig. 8 is a view showing a configuration example of a needle and a light detecting unit portion of a conventional multi-wafer detector disclosed in Patent Document 1, (a) being a side view thereof, and (b) being a plan view thereof.

As shown in FIG. 8(a), the photodetecting unit 101 of the prior multi-wafer detector 100 includes an optical power meter 102 that is disposed directly above the wafer to be inspected and detects the amount of light output from the wafer (here, the LED chip). a support portion 103 of the optical power meter 102; an optical power meter moving mechanism 104 of the moving support portion 103; an optical fiber 105 whose front end extends to the vicinity of the wafer to be inspected; a holding fiber 105 and relayed for detecting incident on the optical fiber 105 A relay unit 106 of a monochromatic light mirror (not shown) having a wavelength of light; a support portion 107 supporting the relay unit 106; and an optical fiber moving mechanism 108 for moving the support portion 107.

As shown in FIG. 8(b), the light detecting unit 101 has a shape in which a portion in which the optical fiber moving mechanism 108 is housed protrudes from the circular portion. Expected optical power meter moving mechanism The optical fiber moving mechanism 108 and the optical fiber moving mechanism 108 are moving mechanisms that use high-speed components such as piezoelectric elements. However, a moving mechanism such as a combination driving screw and a motor can also be used. When it is not necessary to move when checking different wafers, it is not necessary to provide the optical power meter moving mechanism 104 and the optical fiber moving mechanism 108.

The needle 109 has a shape disposed around the light detecting unit 101, and includes one needle unit 109a and seven needle position adjusting mechanisms 109b to 109h.

The needle unit 109a is a unit that fixes the reference needle 110a to the needle 111.

The needle position adjusting mechanism 109e includes a needle 110e, a needle holding unit 112e that holds the needle 110e, a moving unit 113e that mounts the needle holding unit 112e, and a moving mechanism 114e that moves the moving unit 113e. The moving mechanism 114e can move the needle 110e in two axial directions, for example, the X-axis direction and the Y-axis direction, in a plane parallel to the mounting surface of the stage 120. The needle position adjusting mechanisms 109b to 109h can also be realized by a known moving mechanism. Although it is desirable to use a moving mechanism such as a piezoelectric element that can move at high speed, a moving mechanism that combines a driving screw and a motor can be used.

Since the deviation of the position of the electrode pad of the wafer perpendicular to the direction of the mounting surface of the stage 120 is small, and the needle has elasticity, as long as the deviation of the position of the electrode pad in the direction is small, the contact can be made correctly, so although the needle The position adjusting mechanism does not move the needle in a direction perpendicular to the surface of the stage, but in the case where a correct contact pressure is required, the needle position adjusting mechanism can also position the corresponding needle perpendicular to the surface of the stage 120. The direction moves. Thereby, the positional relationship of all the needles 110a to 110h can be made to match the positional relationship of the electrode pads of the separated wafers 122 adhered to the adhesive tape 121.

Fig. 9 is a plan view showing the needle-measuring state of the needles 110a to 110h of the needle holding units 112a to 112h of the prior multi-wafer probe 100 of Fig. 8. Fig. 10 is a view showing an image of the diffusion characteristics of the light-emitting device.

As shown in FIG. 9, eight electrode pads of the adjacent four wafers 122 are brought into contact with the needles 110a to 110h of the previous needle holding units 112a to 112h from the periphery thereof to realize eight simultaneous contacts. That is, the previous multi-wafer detector 100 has the pins 110a-110h including a plurality of position adjusting mechanisms, and the eight pins 110a-110h are arranged in such a manner as to correspond to the positions of the electrode pads of the four wafers 122 detected. Each position is adjusted to contact the four wafers 122.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-70308

According to the configuration of the above-described conventional multi-wafer detector 100 disclosed in Patent Document 1, when the eight pins 110a to 110h are simultaneously in contact with the electrode pads of the four wafers 122 for optical inspection, the arrangement of the probes is The positions of the eight needles 110a to 110h or the support arms thereof, that is, the needle holding units 112a to 112h, are unable to maintain the measurement relative to the wafer configuration or the measurement position by shielding the diffused light of the wafer 122 as shown in FIG. Uniformity of conditions. In general, as shown in FIG. 9, although the movable adjustment mechanism for determining each of the eight needles 110a to 110h is provided, the positional relationship with respect to the needle angle of each of the wafers 122 or the support arm is not constant, so the diffusion is performed. The light is blocked by the needles 110a to 110h and does not become a measurement condition of the uniform light amount. Further, according to Patent Document 1, the simultaneous contact of the four wafers 122 is limited, and simultaneous contact of the plurality of wafers 122 is difficult.

The present invention is directed to solving the above problems, and an object of the present invention is to provide an optical test apparatus which can contact more than four wafers regardless of the position of the probes of the respective wafers, and the optical measurement conditions can be uniform to make the optical measurement uniform. .

The optical test apparatus of the present invention includes: a plurality of contact mechanisms for supplying power to the plurality of light-emitting devices when a plurality of light-emitting devices of the measurement target are electrically contacted to measure optical characteristics; and are respectively disposed in the plurality of The above object is achieved by the two sides of the contact mechanism and the dummy means for shielding the diffused light from the light-emitting device in the same manner as the contact mechanism.

Further, it is preferable that the plurality of contact mechanisms of the optical test apparatus of the present invention and the dummy means on both sides thereof are constituted by a fixed card mechanism.

Further, it is preferable that the dummy means of the optical test apparatus of the present invention corrects the optical light between the plurality of light-emitting devices by shielding diffused light from the light-emitting devices at both end positions of the region to be measured Physical optical correction of the measured value of the characteristic.

Further, it is preferable that the contact mechanism of the optical test apparatus of the present invention and the light-shielding width or the light-shielding area of the diffused light from the light-emitting device below the dummy means are configured in the same manner.

Further, it is preferable that the contact mechanism of the optical test apparatus of the present invention and the dummy mechanism have the same cross-sectional shape of the same size.

Further, it is preferable that the contact mechanism of the optical test apparatus of the present invention and the dummy means are formed to have the same diameter as the cross section.

Further, it is preferable that the dummy means is disposed on both sides of the plurality of contact mechanisms at the same interval as the arrangement interval of the plurality of contact mechanisms of the optical test apparatus of the present invention.

Further, it is preferable that the height of the contact mechanism of the optical test apparatus of the present invention from the light-emitting position and the height of the dummy mechanism from the light-emitting position are set to be the same height.

Further, it is preferable that the material of the contact mechanism of the optical test apparatus of the present invention is made of the same material as the material of the dummy mechanism.

Further, it is preferable that the surface reflection characteristics of the contact mechanism of the optical test apparatus of the present invention and the surface reflection characteristics of the dummy means are the same as the surface reflection characteristics.

Further, it is preferable that the necessary number of the dummy means provided on both sides of the plurality of contact mechanism groups of the optical test apparatus of the present invention is determined based on the diffusion characteristics of the diffused light from the light-emitting device.

Further, it is preferable that the necessary number of the dummy means respectively provided on both sides of the plurality of contact mechanism groups of the optical test apparatus of the present invention is determined according to the distance from the light-emitting position of the light-emitting device to the contact mechanism. .

Moreover, it is preferable that the front end length of the dummy mechanism of the optical testing device of the present invention is shortened to the front end of the dummy mechanism and does not contact the electrode pad of the light emitting device as compared with the length of the front end of the contact mechanism. height.

Further, it is preferable that the contact mechanism of the optical test apparatus of the present invention is a contact probe, and the dummy mechanism is a dummy probe.

Moreover, it is preferable that the plurality of contact mechanisms of the optical testing device of the present invention are a plurality of contact probes, the dummy mechanism is a dummy probe, and the card mechanism is configured by a fixed probe card to form the plurality of roots. The contact probe and the dummy probe on both sides thereof.

Further, in the optical test apparatus of the present invention, it is preferable that the surface reflection characteristics of the contact mechanism at the central portion among the plurality of contact mechanisms are adjusted to be two in a manner of uniform optical characteristic measurement conditions. The surface of the contact mechanism has a higher surface reflection characteristic.

Further, in the optical test apparatus of the present invention, it is preferable to adjust the light-shielding degree of the contact mechanism at the central portion among the plurality of contact mechanisms to be uniform as the optical characteristic measurement conditions. The contact mechanism on both sides has a smaller degree of shading.

According to the above configuration, the action of the present invention will be described below.

The present invention includes: a plurality of contact mechanisms for supplying power to a plurality of light-emitting devices when a plurality of light-emitting devices of the measurement object are electrically contacted to measure optical characteristics; and two of the plurality of contact mechanisms respectively The side, and the dummy mechanism for shielding the diffused light from the light emitting device in the same manner as the contact mechanism.

Thereby, since the dummy mechanism is provided on both sides of the plurality of contact mechanisms, more than four wafers can be contacted, and the optical measurement conditions can be made uniform regardless of the probe positions of the respective wafers. The measured value is uniform.

In addition, since the support arm is used as the movable adjustment mechanism of the probe needle, there is a large-sized arm, and there is a light-receiving sensor for optical detection in which the wafer to be inspected cannot be placed directly above the wafer. The problem is close to each of the wafers to be inspected. However, by providing the probe card as a probe mechanism, the light-receiving sensor can be brought close to each wafer to be inspected and optically measured.

According to the present invention, since the dummy mechanism is provided on both sides of the plurality of contact mechanisms, more than four wafers can be contacted, and the optical measurement conditions can be made regardless of the probe positions of the respective wafers. Uniformity makes the optical measurements uniform.

Moreover, since the support arm is used as the movable adjustment mechanism of the probe needle, the optical sensor for optical detection which is not disposed directly above the wafer to be inspected is large in terms of the large arm size. There is a problem of the wafers to be inspected, but a probe card can be provided as a probe mechanism, and the light-receiving sensor can be optically measured by approaching each wafer of the inspection object.

Hereinafter, the first embodiment of the optical test apparatus according to the present invention will be described in detail with reference to the drawings. In addition, the thickness, length, and the like of the constituent members of the respective drawings are not limited to the constituents of the drawings from the viewpoint of the production of the drawings.

(Embodiment 1)

The optical test apparatus of the first embodiment is a detector and a tester to make.

The detector includes a mobile station (not shown) that fixes a plurality of wafers before or after the wafer is cut to the upper surface, and is disposed on the base and can be oriented to the X-axis and the Y-axis. a three-axis movement of the Z-axis and a stage rotatable about the Z-axis; a probe mechanism (not shown) disposed above the mobile station and provided with a plurality of wafers as objects to be inspected a plurality of probes (needle-like or spring-like) of a plurality of contact mechanisms for contacting the electrode pads; and a position control device (not shown) for making electrodes of the plurality of wafers to be inspected The position of the pad is coincident with the position of the front end of the plurality of probes for contact, and the three-axis coordinate position of the coordinate (X, Y, Z) of the mobile station is controlled, and the rotational position is controlled.

The tester includes: an action characteristic checker that inputs an electrical signal from each probe of the probe mechanism, and checks various electrical operating characteristics of a device to be inspected, such as an IV characteristic of the LED chip; and an optical characteristic test The light incident on the LED chip is incident on a light receiving means such as a light receiving sensor or an integrating sphere, and various optical characteristics such as an illuminating color and a luminescent amount (light emitting intensity) are examined.

Hereinafter, in the optical test apparatus according to the first embodiment, a needle placement arrangement example of each electrode pad of a plurality of wafers to be inspected will be described in detail.

1 is a plan view showing an example of a needle-to-measurement arrangement of an optical test apparatus according to a first embodiment of the present invention with respect to a longitudinally-arranged electrode pad, and (a) is a plan view of a case where a dummy probe as a dummy mechanism is not provided, (b) There is a top view of the case of a dummy probe as a dummy mechanism. Figure 2 shows Embodiment 1 of the present invention The top view of the needle test arrangement example of the optical test device with respect to the laterally arranged electrode pads, and (a) is a top view of the case where there is no dummy probe as a dummy mechanism, and (b) is a case of a dummy probe as a dummy mechanism Top view.

As shown in FIG. 1(a) and FIG. 2(a), when there are no dummy probes on both sides, the electrode pads 12a of the vertically aligned wafers 12 or the electrodes 13 of the laterally arranged wafers 13 are welded. In the optical test apparatus 10A or 10B of the reference example, the pad 13a is a light-emitting device that reduces the previous support arm of the support probe 11 and the plurality of probes 11 with respect to the LED chip or the like (abbreviated as The arrangement of the electrode pads 12a or 13a of the wafer 12 or 13) is uniform, and the uniformity of the light quantity measurement conditions between the plurality of wafers 12 or 13 is ensured, and the probe card is used as the probe mechanism, but only the light quantity measurement is set. Required probe 11. The arrangement of the plurality of probes 11 is such that the probe 11 is uniform across the wafer 12 or 13 so that the degree of light blocking is uniform.

On the other hand, as shown in FIGS. 1(b) and 2(b), when dummy probes are provided on both sides, regardless of the electrode pads 22a of the vertically aligned wafers 22, or the laterally arranged wafers 23 In each of the electrode pads 23a of the first embodiment, the previous support arm of the support probe 21 is reduced and the plurality of probes 21 are opposed to the LED chip, etc., in the optical test apparatus 20A or 20B of the first embodiment. The arrangement of the electrode pads 22a or 23a of the light-emitting device (abbreviated as the wafer 22 or 23) is uniform, and the uniformity of the light measurement conditions between the plurality of wafers 22 or 23 is ensured, and the probe card is used as the probe mechanism. However, it includes a plurality of probes 21 (four for the sake of simplicity of explanation) required for the measurement of the amount of light, and dummy probes 21a disposed at positions on the adjacent sides thereof and which are not subjected to the measurement of the amount of light. The probe card is used to make the plurality of probes 21 and the virtual probes on both sides thereof The front end portions of the needles 21a are fixed such that their lower surfaces correspond to the electrode pads of the wafers 22 or 23. Thereby, the arrangement of the plurality of probes 21 makes the probe 21 uniform with respect to the wafer 22 or 23 (the degree of light shielding is uniform), and by the dummy probes 21a on both sides, regardless of the wafers 22 or 23 The probe position (measurement position) can make the measurement condition of the light quantity uniform.

The plurality of probes 21 (contact probes) and the dummy probes 21a on both sides thereof are constituted by a fixed probe card. In general, when there is no dummy probe 21a on both sides, since the diffused light in the up and down direction of both ends is not shielded, the measured value of the light amount differs depending on the center and the CH positions (measured positions) on both sides. That is, as shown in FIG. 3(a), CH-1 and CH-4 at both ends of the CH position (measurement position) are measured by the diffused light outside the inspection area, and the radiation intensity is measured strongly. Further, as shown in Fig. 3(a), CH-2 and CH-3 in the center of the CH position (measurement position) are shielded by the probes 21 for CH-1 and CH-4 on both sides. The light is diffused to measure the weaker radiation intensity.

In the case of performing the optical correction calculation in response to this, in addition to the optical characteristics and the probe positional relationship, the correction calculation is complicated for a plurality of reasons. Therefore, when the measurement of the amount of light is performed on each of the wafers 22 or 23 of the light-emitting device, the dummy probe 21a having the same design as the probe 21 for measuring/illuminating the contact probe is disposed on both sides thereof. The radiation diffusion light at the time of measurement of the wafers 22 or 23 from both sides of the inspection object is shielded by the dummy probes 21a on both sides, thereby making it possible to make the measurement conditions of the light amount uniform without depending on the light-emitting position, thereby being physically provided. The optical correction mechanism of the wafer 22 or 23 of the measurement object. That is, the dummy probe 21a diffuses the wafer 22 or 23 from the end positions of both sides of the measurement area of the inspection object by masking The light is subjected to physical optical correction other than the calculation of the measured value of the optical characteristic between the plurality of wafers 22 or 23.

In this way, the dummy probes 21a are respectively disposed on both sides of the measurement area of the CH-1 to CH-4 of the CH position (measurement position), and the CH-1 and CH-4 of the CH position (measurement position) are implemented. The masking is performed in the same manner as the CH-2 and CH-3 on the inner side, and the measurement environment of the same conditions for averaging the entire wafers 22 or 23 of CH-1 to CH-4. Thereby, as shown in FIG. 3(b), the diffused light from the wafer 22 or 23 is uniformly received by the surrounding probe 21 and the dummy probe 21a having the same shape regardless of the CH position (measurement position). Shading, so the measured value of light is uniform under the same measurement conditions.

As a procedure for the inspection operation (measurement) of the wafer 22 or 23, in the DC characteristic measurement as the electrical operation characteristic, CH-1 to CH-4 of the CH position (measurement position) are collectively measured. Then, in the optical characteristic measurement, CH-1 to CH-4 of the CH position (measurement position) are measured for each CH to control the light emission, the amount of light, and the color.

4 is a view showing the main part of the light-shielding state of the diffused light in the case where the distance between the probe 21 and the dummy probe 21a of FIG. 1(b) and FIG. 2(b) and the light-emitting center of the wafer 22 or 23 is small. Sectional view. Fig. 5 is a view showing the main part of the light-shielding state of the diffused light in the case where the distance between the probe 21 and the dummy probe 21a of Fig. 1 (b) and Fig. 2 (b) and the light-emitting center of the wafer 22 or 23 is large. Sectional view.

As shown in FIG. 4, the diffused light from the luminescence center of the wafer 22 or 23 of CH-2 in CH-1 to CH-4 from the CH position (measurement position) is the probe 21 and the dummy probe above it. The needle 21a is shielded from light, and passes through the photodetector 24, which is incident on each of the probes 21 and the dummy probes 21a. borrow The light amount is detected by the light receiving sensor 24.

In this case, by disposing the dummy probe 21a on an area other than the measurement area on both sides of the plurality of probes 21 to be inspected, the diffused light of the wafer 22 or 23 from the end positions of both sides of the inspection object can be shielded. The optical capturing conditions are the same at all wafer positions of the inspection object.

The probe diameter of the cross-sectional circular shape of the dummy probe 21a can be made more uniform in the degree of shielding of the diffused light by using the same probe diameter as that of each probe 21 in the measurement area of the inspection target. In summary, the probe 21 is configured to have a light-shielding width or a light-shielding area of the diffused light from the light-emitting position of the wafer 22 or 23 below it, similarly to the dummy probe 21a. Further, the cross-sectional shape of the probe 21 and the dummy probe 21a are configured to have the same shape (for example, a circle, an ellipse, a polygon, a quadrangle, a square, a rectangle, or the like) having the same size.

The probe arrangement of the dummy probe 21a is designed to be more uniform in the degree of shielding of the diffused light by the same arrangement and distance (pitch/height) design of the probes 21 of the measurement area to be inspected. That is, the probe interval of the probe 21 and the probe interval of the dummy probe 21a are formed at the same distance. Further, the height of the probe 21 from the light-emitting position of the wafer 22 or 23 is set to be the same as the probe height of the dummy probe 21a from the light-emitting position of the wafer 22 or 23. The height of the probe is set to the height of the root portion of the front end probe 21 and the dummy probe 21a.

The material of the probe for the dummy probe 21a can also be made uniform by the surface reflection characteristics of the light by using the same probe 21 as the measurement area of the inspection target. That is, the surface reflection characteristics of the probe 21 and the surface reflection characteristics of the dummy probe 21a are the same as the surface reflection characteristics.

On the other hand, the light-receiving sensor 24 has a sufficient light-receiving area at an angle of several cm to several tens of cm and a difference in measurement characteristics with respect to the light-emitting position. The probe profile is designed in such a manner that the diameter is on the order of several hundred μm to several mm and is arranged at the same distance from the midpoint of the light emission of the wafer 22 or 23. The light-emitting midpoint of the wafer 22 or 23 is on the order of hundreds of μm and the amount of light shielded according to the diffusion characteristics from the wafer 22 or 23 varies. The larger the diameter of each of the probes 21 and the dummy probes 21a, the more the light is blocked.

The total number of probes is constituted by the number of probes required for the measurement area of the inspection object and the number of dummy probes in the area other than the measurement area on both sides. The number of dummy probes other than the measurement area is determined by the light diffusion condition. The number of dummy probes will be described with reference to FIGS. 4 and 5.

In FIG. 4, when the diffusion characteristic of the diffused light of the light-emitting center of the wafer 22 or 23 of the CH-2 from the CH position (measurement position) is weak and the directivity is strong (diffusion angle θ2), the light-emitting point CH is In the case of -2, the light-shielding probe 21 is only PR5. In this case, since the area of the light-shielding probe is the same for each of the light-emitting points CH-1 to CH-4, there is no difference in optical characteristics with respect to the light-emitting positions of the respective light-emitting points CH-1 to CH-4. That is, it is not necessary to provide the dummy probe 21a on both sides of the four probes 21.

In FIG. 4, when the diffusion light of the light-emitting center of the wafer 22 or 23 of the CH-2 from the CH position (measurement position) is strong and the directivity is weak (diffusion angle θ1), the light-emitting point CH is In the case of -2, the light-shielding probe 21 is mainly centered on PR5, and three of the left side PR2 to PR4 and the right side PR6 to PR8 are seven, and the diffused light is shielded. Therefore, the measurement is carried out with four simultaneous contacts. In the case of the four probes PR4 to PR7 for supplying current to the respective light-emitting points CH1 to CH4, in order to uniform the light-shielding conditions, three of the outer sides of CH1 and three of the outer sides of CH4 are used as the dummy probes 21a, and It is necessary to arrange four probes 21 and three dummy probes 21a on each side to total ten probes.

As shown in FIG. 4, when the distance L1 between the probe 21 and the dummy probe 21a and the light-emitting center of the wafer 22 or 23 is small, since the diffused light radiated from the light-emitting point reaches the height of the probe before diffusion, The number of probes in the light-shielding probe region (the number of probes 21 and the number of dummy probes 21a) is small and functions. On the other hand, even if the diffusion characteristics (diffusion angles θ1 or θ2) of the diffused light are the same, when the distance between the light-emitting point and the probe 21 is different, the amount of light that is blocked is changed, and the amount of light to be measured changes. Therefore, as shown in FIG. 5, when the distance L2 between the probe 21 and the dummy probe 21a and the illuminating center of the wafer 22 or 23 is large, the diffused light radiated from the light-emitting point does not spread until reaching the probe 21. Therefore, depending on the diffusion area of the diffused light, it is necessary to increase the total number of probes (the number of each of the probe 21 and the dummy probe 21a) in the probe region.

Therefore, the closer the interval between the probe 21 and the dummy probe 21a and the light-emitting center of the wafer 22 or 23, the more the number of dummy probes 21a that are not inspected can be reduced.

In summary, the necessary number of dummy probes 21a is determined based on the diffusion characteristics of the diffused light from each of the wafers 22 or 23 which are light-emitting devices on both sides of one of the plurality of probes 21, respectively. Further, the necessary number of the dummy probes 21a is determined based on the distance from the light-emitting position of each of the wafers 22 or 23 of the light-emitting device to the probe 21 from both sides of one of the plurality of probes 21.

Fig. 6 is a side view of the probe for explaining the shape of the front end of the probe 21 of Figs. 1(b) and 2(b).

As shown in Fig. 6, at the time of optical measurement, the front end of the probe 21 contacts the electrode pads 22a or 23a of the wafer 22 or 23 of the inspection object. The shape of the front end of the front end of the probe 21 is a shape that is bent downward to be stronger against the pressing from the top to the bottom.

Fig. 7 is a side view of the probe for explaining the shape of the front end of the dummy probe 21a of Figs. 1(b) and 2(b).

As shown in Fig. 7, the front end of the dummy probe 21a does not contact the electrode pads 22a or 23a of the wafer 22 or 23 to be inspected, and the electrode pads 22a or 23a are separated from the front ends of the dummy probes 21a.

In summary, the probe 21 standing directly above the light-emitting midpoint of the wafer 22 or 23 to be inspected is intended to supply current to each of the electrode pads 22a or 23a as shown in FIG. 23 is illuminated and designed in such a manner that the probe 21 can contact the electrode pads 22a or 23a of the wafer 22 or 23 of the inspection object. However, since the dummy probe 21a is intended to be shielded as shown in FIG. 7, it is also intended to cause undesired contact damage to the electrode pads 22a or 23a of the wafer 22 or 23 to be inspected, so that the dummy probe 21a is provided. The manner in which the front end does not contact the electrode pads 22a or 23a of the wafer 22 or 23 to be inspected is previously set to the state in which the front end of the dummy probe 21a is cut. Therefore, although the shape of the front end of the dummy probe 21a is bent downward, it is formed shorter than the length of the tip end of the probe 21 which is bent downward. The contact overdrive amount D in the case where the probe 21 is brought into contact with each of the electrode pads 22a or 23a by the elastic force thereof is set smaller than the dummy probe shortening amount E of the dummy probe 21a. borrow Thus, the front end of the dummy probe 21a does not always contact the electrode pads 22a or 23a.

Thus, the length of the front end of the dummy probe 21a is shortened to the length of the front end of the probe 21, and is shortened until the front end of the dummy probe 21a does not contact the electrode pads 22a or 23a of the respective wafers 22 or 23 as the light-emitting device. The height of the surface.

Here, for the use of a plurality of probes 21 having a plurality of probes 21 corresponding to the wafer 22 or 23 to be inspected, and a probe card on one side of the probe group or a plurality of dummy probes 21a of the plurality of probes 21 Advantages are explained.

The distance between the plurality of probes 21 of FIGS. 1(b) and 2(b) and the dummy probes 21a on the two sides and the illuminating center of the wafer 22 or 23 can be compared with the case where the probe card is not used. Set it shorter. That is, the distance L between the light-emitting point and the probe can be shortened.

Further, the distance between the light-emitting point of the wafer 22 or 23 and the light-receiving sensor that receives the diffused light from the wafer 22 or 23 and inspects the amount of light can be shortened. Thereby, the device is miniaturized.

In the prior art, since the support arm as the movable adjustment mechanism of the probe 21 is used, since the size of the arm is large, there is a possibility that the light detection for optical detection that is disposed directly above the wafers 22 or 23 to be inspected cannot be received. The device 24 is close to the problem of each of the wafers 22 or 23 of the inspection object, but by providing the probe card as a probe mechanism, the light-receiving sensor can be brought close to each wafer 22 or 23 of the inspection object to accurately perform optical measurement with high precision. .

Further, the probe arrangement of the dummy probe 21a is designed to have the same arrangement and distance (pitch/height) as the probes 21 of the measurement area of the inspection target, but the probe can be uniform by using the probe card. Good pitch accuracy The probe design is implemented.

Further, by using the probe card, not only a flat sensor but also a three-dimensional integrating sphere can be provided for the light receiving portion, and a more accurate light amount measurement can be performed.

As described above, according to the first embodiment, the optical test apparatus 20A or 20B which is an optical test apparatus which obtains a plurality of simultaneous optical characteristics in a light-emitting device, for example, a wafer 22 or 23 such as an LED chip, can be obtained. An optical correction mechanism that measures the amount of light by performing probe contact, and includes a contact probe 21 for supplying a power source, and both sides of the contact probe group, and further includes a purpose of shielding the diffused light. The optical characteristics of the wafer 22 or 23 to be measured by the dummy probe 21a for obtaining the same measurement condition can be measured by uniform light quantity measurement conditions regardless of the position of the device at the center and both sides of the plurality of wafers 22 or 23. In this manner, relatively more than four of the plurality of wafers 22 or 23 are in contact, and the optical measurement conditions are uniform regardless of the probe positions of the respective wafers 22 or 23 to make the optical measurement uniform. The contact with the plurality of wafers 22 or 23 may also be the contact of dozens of wafers 22 or 23 or hundreds of wafers 22 or 23.

According to the first embodiment, in the optical test apparatus for measuring the optical characteristics of the wafers 22 or 23, when a plurality of wafers 22 or 23 are simultaneously subjected to probe contact and individual optical characteristics are measured, a plurality of contact probes 21 for supplying power, and one or a plurality of dummy mechanisms respectively provided on both sides of the plurality of contact probes 21 as the dummy means for shielding the diffused light in the same manner as the contact probe 21. The case of the dummy probe 21a will be described, but it is not limited thereto, since the wafer 22 or 23 is individually measured. Since the optical characteristics are not required, the plurality of wafers 22 or 23 are simultaneously subjected to probe contact, and a plurality of wafers 22 or 23 may be sequentially subjected to probe contact.

Further, according to the first embodiment, the measurement of the optical characteristics of the plurality of wafers 22 or 23 to be inspected is described as a row for the plurality of wafers 22 or 23 to be inspected, but may be a plurality of wafers of two rows. 22 or 23, and may also be a plurality of wafers 22 or 23 of a plurality of rows. According to the first embodiment, as one of the dummy means or the plurality of dummy probes 21a, when a plurality of wafers 22 or 23 are one row, they are respectively disposed on both sides of the plurality of wafers in two rows or in plural rows. In the case of 22 or 23, the plurality of dummy probes 21a are designed to be enclosed in such a manner that the number of roots is increased.

Further, according to the first embodiment, although not described in detail, the optical characteristics may be checked in a state in which a plurality of wafers 22 or 23 are formed in a matrix on a semiconductor wafer. The invention is applied to both of the cases where the optical characteristics are inspected in a state in which the semiconductor wafer is cut into a plurality of wafers 22 or 23 and singulated with an adhesive tape.

Further, according to the first embodiment, although not specifically described, one of the dummy means for shielding the diffused light in the same manner as the plurality of probes 21 is provided in addition to the two sides of the plurality of probes 21, respectively. In addition to the plurality of dummy probes 21a, the surface reflection characteristics of the probes 21 at the center of the plurality of probes 21 can be adjusted to be two or more. The surface of the probe 21 on the side has a higher surface reflection characteristic. Further, it is also possible to provide a method of measuring the optical characteristics of the center probe of the plurality of probes 21 with a high precision and uniform optical characteristic measurement condition. The degree is adjusted to be lower (smaller) than the probe 21 on both sides.

According to the first embodiment, the plurality of probes 21 as the plurality of contact mechanisms and one or both of the dummy means 21a on both sides thereof are respectively oriented toward the LED chip or the like as the light-emitting device. The two electrode pads 22a or 23a of the wafer 22 or 23 are described as being arranged in a manner orthogonal to the arrangement direction of the wafers 22 or 23 as the light-emitting device in a plan view (right angle), but are not limited thereto. Therefore, the plurality of probes 21 and one of the two sides or the plurality of dummy probes 21a may also face the two electrode pads 22a or 23a of the plurality of wafers 22 or 23, respectively, and are respectively opposite to the plurality of electrodes The arrangement direction of the wafers 22 or 23 is arranged in a specific angle in a plan view. The plurality of probes 21 and one of the two sides or the plurality of dummy probes 21a are respectively directed to the two electrode pads 22a or 23a of the plurality of wafers 22 or 23, and are respectively opposed to the plurality of wafers from both sides The arrangement direction of 22 or 23 is arranged in a plan view orthogonally, and the light-shielding of the diffused light from the light-emitting device is compared with the case where the arrangement is arranged at a specific angle in a plan view with respect to the arrangement direction of the plurality of wafers 22 or 23. At the very least, regardless of whether the probe is orthogonal in plan view or tilted at a specific angle in the plan view, it is sufficient to obtain uniform light-shielding of diffused light from the light-emitting device.

As described above, the present invention has been exemplified in a preferred embodiment 1 of the present invention, but the present invention is not limited to the first embodiment. It is to be understood that the invention is to be construed as limited only by the scope of the patent application. Those skilled in the art will appreciate that the scope of the equivalents of the present invention can be It should be understood that the patents, patent applications and articles cited in this specification The contents are as set forth in the specification, and the contents thereof are referred to as a reference to the present invention.

[Industrial Applicability]

The present invention is in the field of an optical test apparatus in which a plurality of wafers attached to a single tape are adhered to the other surface in a state of being cut from a semiconductor wafer in a specific number, regardless of the probe positions of the respective wafers. The measurement of the amount of light can be made uniform, and the measured value of the amount of light can be made uniform. Further, since the support arm is used as the movable adjustment mechanism of the probe needle, the optical sensor for optical detection that cannot be placed directly above the respective wafers to be inspected is large in terms of the large arm size. There is a problem of approaching each of the wafers to be inspected, but a probe card can be provided as a probe mechanism, and the light-receiving sensor can be optically measured by approaching each wafer of the inspection target.

10A‧‧‧Optical test device

10B‧‧‧Optical test device

11‧‧‧Probe

12‧‧‧ wafer

12a‧‧‧Electrode pads

13‧‧‧ wafer

13a‧‧‧Electrode pads

20A‧‧‧Optical test device

20B‧‧‧Optical test device

21‧‧‧Probe (contact probe)

21a‧‧‧Dummy probe

22‧‧‧ wafer

22a‧‧‧Electrical pads

23‧‧‧ wafer

23a‧‧‧Electrical pads

24‧‧‧Photodetector

100‧‧‧Multi-chip detector

101‧‧‧Light detection unit

102‧‧‧Light power meter

103‧‧‧Support

104‧‧‧Light power meter moving mechanism

105‧‧‧Fiber

106‧‧‧Relay unit

107‧‧‧Support

108‧‧‧Fiber moving mechanism

109‧‧‧ needle

109a‧‧ needle unit

109b‧‧‧Needle position adjustment mechanism

109c‧‧‧Needle position adjustment mechanism

109d‧‧‧Needle position adjustment mechanism

109e‧‧‧needle position adjustment mechanism

109f‧‧‧Needle position adjustment mechanism

109g‧‧‧needle position adjustment mechanism

109h‧‧‧Needle position adjustment mechanism

110a‧‧ needle (reference needle)

110b‧‧ needle

110c‧‧ needle

110d‧‧‧ needle

110e‧‧ needle

110f‧‧ needle

110g‧‧ needle

110h‧‧ needle

111‧‧‧ needle

112a‧‧ needle retention unit

112b‧‧‧Needle holding unit

112c‧‧‧needle holding unit

112d‧‧‧needle holding unit

112e‧‧ needle retention unit

112f‧‧‧needle holding unit

112g‧‧‧needle holding unit

112h‧‧ needle retention unit

113e‧‧‧Mobile unit

114b‧‧‧Mobile agencies

114c‧‧‧Mobile agencies

114d‧‧‧Mobile agencies

114e‧‧‧Mobile agencies

114f‧‧‧Mobile agencies

114g‧‧‧Mobile agencies

114h‧‧‧Mobile agencies

120‧‧‧stage

121‧‧‧Adhesive tape

122‧‧‧ wafer

CH-1‧‧‧Lighting point

CH-2‧‧‧Lighting point

CH-3‧‧‧Lighting point

CH-4‧‧‧Lighting point

D‧‧‧Contact overdrive

E‧‧‧Dummy probe shortening

L1‧‧‧ interval

L2‧‧‧ interval

PR1‧‧‧ probe

PR2‧‧‧ probe

PR3‧‧‧ probe

PR4‧‧‧ probe

PR5‧‧‧ probe

PR6‧‧‧ probe

PR7‧‧‧ probe

PR8‧‧‧ probe

PR9‧‧‧ probe

Θ1‧‧‧ diffusion angle

Θ2‧‧‧ diffusion angle

1 is a plan view showing an example of a needle-to-measurement arrangement of an optical test apparatus according to Embodiment 1 of the present invention with respect to a longitudinally-arranged electrode pad, and (a) is a plan view showing a case where no dummy probe is provided, and (b) is a dummy probe. Top view of the situation.

2 is a plan view showing an example of a needle-to-measurement arrangement of an optical test apparatus according to Embodiment 1 of the present invention with respect to a laterally-arranged electrode pad, and (a) is a plan view showing a case where there is no dummy probe, and (b) is a dummy probe. Top view of the situation.

Fig. 3(a) is a view showing the luminous intensity at the light-emitting position in the case where there is no dummy probe on both sides of the probe group, and (b) shows the light-emitting position in the case where the dummy probe is provided on both sides of the probe group. A diagram of the luminous intensity.

Figure 4 is a diagram for explaining the shading state of the diffused light in the case where the distance between the probe of the probes of Fig. 1 (b) and Fig. 2 (b) and the imaginary probe and the illuminating center of the wafer is small. Longitudinal section.

Fig. 5 is a longitudinal cross-sectional view of an essential part for explaining a light-shielding state of diffused light in a case where the distance between the probe of the probes of Fig. 1 (b) and Fig. 2 (b) and the imaginary probe and the illuminating center of the wafer is large.

Fig. 6 is a side view of the probe for explaining the shape of the front end of the probe of Figs. 1(b) and 2(b).

Fig. 7 is a side view of the probe for explaining the shape of the front end of the dummy probe of Figs. 1(b) and 2(b).

Fig. 8 is a view showing a configuration example of a needle and a light detecting unit portion of a conventional multi-wafer detector disclosed in Patent Document 1, and (a) is a side view thereof, and (b) is a plan view thereof.

Figure 9 is a plan view showing the needle-measuring state of the needle of the needle holding unit of the prior multi-wafer probe of Figure 8.

Fig. 10 is a view showing an image of the diffusion characteristics of the light-emitting device.

10A‧‧‧Optical test device

11‧‧‧Probe

12‧‧‧ wafer

12a‧‧‧Electrode pads

20A‧‧‧Optical test device

21‧‧‧Probe (contact probe)

21a‧‧‧Dummy probe

22‧‧‧ wafer

22a‧‧‧Electrical pads

CH-1‧‧‧Lighting point

CH-2‧‧‧Lighting point

CH-3‧‧‧Lighting point

CH-4‧‧‧Lighting point

Claims (19)

An optical testing device comprising: a plurality of contact mechanisms for supplying power to the plurality of light emitting devices when a plurality of light emitting devices of the measuring object are electrically contacted to measure optical characteristics; and a dummy mechanism; They are respectively disposed on both sides of the arrangement of the plurality of contact mechanisms, and are configured to shield the diffused light from the light emitting device in the same manner as the contact mechanism to make the light quantity measurement condition uniform. The optical test apparatus of claim 1, wherein the plurality of contact mechanisms and the dummy means on both sides thereof are formed by a fixed card mechanism. The optical test apparatus of claim 1, wherein the dummy means corrects the measured value of the optical characteristic between the plurality of light emitting devices by shielding diffused light from the light emitting devices at both end positions of the region of the measurement target Physical optical correction. The optical test apparatus according to claim 1, wherein the contact mechanism and the light-shielding width or the light-shielding area of the diffused light from the light-emitting device below the dummy mechanism are configured to be the same. The optical test apparatus of claim 4, wherein the cross-sectional shape of the contact mechanism and the dummy mechanism are the same shape of the same size. The optical test apparatus of claim 5, wherein the contact mechanism and the dummy mechanism are configured to have the same diameter in cross section. The optical test apparatus according to claim 1, wherein the dummy means is disposed on both sides of the plurality of contact mechanisms at the same interval as the arrangement interval of the plurality of contact means. An optical test apparatus according to claim 1, wherein said contact mechanism is illuminated The height of the position is configured to be the same height as the height of the above-described dummy mechanism from the light-emitting position. The optical test apparatus of claim 1, wherein the material of the contact mechanism and the material of the dummy mechanism are the same material. The optical test apparatus of claim 1, wherein the surface reflection characteristic of the contact mechanism and the surface reflection characteristic of the dummy mechanism are the same surface reflection characteristics. The optical test apparatus according to claim 1, wherein the necessary number of the dummy means respectively provided on both sides of the plurality of contact mechanism groups is determined according to a diffusion characteristic of the diffused light from the light-emitting device. The optical test apparatus according to claim 1 or 11, wherein the necessary number of the dummy means respectively disposed on both sides of the plurality of contact mechanism groups is determined according to a distance from a light-emitting position of the light-emitting device to the contact mechanism. The optical test apparatus of claim 1, wherein the length of the front end of the dummy mechanism is shortened to a height of the electrode pad of the light emitting device before the front end of the dummy mechanism is shortened compared to the length of the front end of the contact mechanism. The optical test apparatus of claim 1, wherein the contact mechanism is a contact probe, and the dummy mechanism is a dummy probe. The optical test device of claim 2, wherein the plurality of contact mechanisms are a plurality of contact probes, the dummy mechanism is a dummy probe, and the card mechanism is configured by a fixed probe card to form the plurality of contact probes. The dummy probe on both sides of the needle. The optical test apparatus of claim 1, wherein the surface reflection characteristic of the contact mechanism at the central portion of the plurality of contact mechanisms is adjusted to be closer to the contact mechanism than the two sides of the plurality of contact mechanisms in a manner to be uniform optical characteristic measurement conditions. The surface reflection characteristics are higher. The optical test apparatus according to claim 1, wherein the light-shielding degree of the contact mechanism at the central portion of the plurality of contact mechanisms is adjusted to be light-shielded by the contact mechanism on both sides of the plurality of contact mechanisms in a manner to be uniform optical characteristic measurement conditions. Lesser. The optical test apparatus of claim 1, wherein the plurality of contact mechanisms and the dummy means on both sides thereof respectively face the two electrode pads of the light emitting device, and are opposite to the plurality of light emitting devices from both sides of the light emitting device The arrangement directions are arranged in a plan view orthogonal or at a specific angle. A probe card comprising: a plurality of contact probes for supplying power to a plurality of light emitting devices; and dummy probes respectively disposed on opposite sides of the arrangement of the plurality of contact probes, and For obscuring the diffused light from the light emitting device in the same manner as the plurality of contact probes to make the light quantity measurement condition uniform; compared to the front end length of the contact probe, the length of the front end of the virtual probe is shortened to the virtual The front end of the probe does not contact the height of the surface of the electrode pad of the light emitting device.