JPH09232875A5 - - Google Patents

Info

Publication number
JPH09232875A5
JPH09232875A5 JP1997034399A JP3439997A JPH09232875A5 JP H09232875 A5 JPH09232875 A5 JP H09232875A5 JP 1997034399 A JP1997034399 A JP 1997034399A JP 3439997 A JP3439997 A JP 3439997A JP H09232875 A5 JPH09232875 A5 JP H09232875A5
Authority
JP
Japan
Prior art keywords
amplifier
bias
signal
oscillator
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997034399A
Other languages
English (en)
Japanese (ja)
Other versions
JP3901780B2 (ja
JPH09232875A (ja
Filing date
Publication date
Priority claimed from FR9601392A external-priority patent/FR2744578B1/fr
Application filed filed Critical
Publication of JPH09232875A publication Critical patent/JPH09232875A/ja
Publication of JPH09232875A5 publication Critical patent/JPH09232875A5/ja
Application granted granted Critical
Publication of JP3901780B2 publication Critical patent/JP3901780B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP03439997A 1996-02-06 1997-02-03 高周波増幅器 Expired - Lifetime JP3901780B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9601392 1996-02-06
FR9601392A FR2744578B1 (fr) 1996-02-06 1996-02-06 Amlificateur hautes frequences

Publications (3)

Publication Number Publication Date
JPH09232875A JPH09232875A (ja) 1997-09-05
JPH09232875A5 true JPH09232875A5 (enExample) 2004-12-24
JP3901780B2 JP3901780B2 (ja) 2007-04-04

Family

ID=9488867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03439997A Expired - Lifetime JP3901780B2 (ja) 1996-02-06 1997-02-03 高周波増幅器

Country Status (5)

Country Link
US (1) US5874860A (enExample)
EP (1) EP0789451B1 (enExample)
JP (1) JP3901780B2 (enExample)
DE (1) DE69714881T2 (enExample)
FR (1) FR2744578B1 (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100418001B1 (ko) * 1996-08-05 2004-02-11 미쓰비시덴키 가부시키가이샤 고주파 전력누설의 영향이 억제된 고주파 무선 송수신기를 위한 고주파 집적회로
DE19737062A1 (de) * 1997-08-26 1999-03-04 Bosch Gmbh Robert Verfahren und Schaltungsanordnung zur Einstellung eines Arbeitspunktes einer Transistorstufe
US6043712A (en) * 1998-07-17 2000-03-28 Motorola, Inc. Linear power amplifier
US6791419B1 (en) * 1998-12-02 2004-09-14 Ericsson, Inc. Constant gain, constant phase RF power block
US6104246A (en) * 1999-05-25 2000-08-15 International Business Machines Corporation Variable gain RF amplifier with switchable bias injection and feedback
US6300835B1 (en) 1999-12-10 2001-10-09 Motorola, Inc. Power amplifier core
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6721368B1 (en) * 2000-03-04 2004-04-13 Qualcomm Incorporated Transmitter architectures for communications systems
CN1430792A (zh) * 2000-05-31 2003-07-16 摩托罗拉公司 半导体器件及方法
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
WO2002009187A2 (en) * 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6432546B1 (en) 2000-07-24 2002-08-13 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6482538B2 (en) 2000-07-24 2002-11-19 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
US6369641B1 (en) * 2000-09-22 2002-04-09 Infineon Technologies North America Corp. Biasing circuits
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
KR100480244B1 (ko) * 2002-06-03 2005-04-06 삼성전자주식회사 레이저 모듈
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
RU2255342C2 (ru) * 2003-10-16 2005-06-27 Аванесян Гарри Романович Вычислитель оценки нелинейных искажений (варианты)
JP4843927B2 (ja) * 2004-10-13 2011-12-21 ソニー株式会社 高周波集積回路
EP1811658A1 (en) * 2006-01-24 2007-07-25 Alcatel Lucent Power amplifier bias protection for depletion mode transistor
US7733134B1 (en) * 2006-03-31 2010-06-08 Ciena Corporation High speed low noise switch
US8644777B2 (en) * 2010-05-07 2014-02-04 Skyworks Solutions, Inc. System and method for power amplifier over-voltage protection
DE102018113654A1 (de) 2018-06-08 2019-12-12 Schaeffler Technologies AG & Co. KG Zylinderkopfmodul eines variablen Ventiltriebs einer Brennkraftmaschine
US20200076488A1 (en) 2018-08-30 2020-03-05 Skyworks Solutions, Inc. Beamforming communication systems with sensor aided beam management
CN112483214B (zh) * 2019-09-12 2024-09-27 舍弗勒投资(中国)有限公司 内燃机的可变气门机构的缸盖模块

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268797A (en) * 1979-03-28 1981-05-19 Westinghouse Electric Corp. Self-pulsed microwave power amplifier
JPS5669908A (en) * 1979-11-12 1981-06-11 Mitsubishi Electric Corp Field effect transistor circuit with protecting circuit
FR2512292B1 (fr) * 1981-08-25 1986-11-21 Lmt Radio Professionelle Amplificateur hyperfrequence a transistors a effet de champ, notamment pour radar doppler
US4994757A (en) * 1989-11-01 1991-02-19 Motorola, Inc. Efficiency improvement of power amplifiers
ES2073541T3 (es) * 1989-12-05 1995-08-16 Nec Corp Unidad amplificadora de potencia que utiliza un modulo amplificador de potencia.
US5640693A (en) * 1994-08-30 1997-06-17 Sensormatic Electronics Corporation Transmitter for pulsed electronic article surveillance systems
US5642378A (en) * 1994-11-17 1997-06-24 Denheyer; Brian John Dual mode analog and digital cellular phone

Similar Documents

Publication Publication Date Title
JPH09232875A5 (enExample)
EP0789451B1 (en) Integrated high frequency amplifier
AU6503100A (en) Driving circuits for switch mode rf power amplifiers
JPH07118666B2 (ja) 携帯無線装置
TW200509547A (en) High frequency power amplification module and wireless communication device
WO2006073701A3 (en) High efficiency switch-mode power amplifier
JPH11112316A (ja) Ｍｅｓｆｅｔを用いたスイッチ回路
EP1237277A3 (en) Semiconductor switching device
US8149027B2 (en) Circuit with a voltage dependent resistor for controlling an on/off state of a transistor
JP2004510376A (ja) ブートストラップ二重ゲート・クラスｅ増幅回路
JPS6033716A (ja) 電力増幅装置
US4961015A (en) MOS current switching circuit
US5471656A (en) Communication apparatus utilizing high power amplifier
JPH03104408A (ja) 電力増幅器
EP1162737A4 (en) SEMICONDUCTOR DEVICE AND COMMUNICATION DEVICE
US5459428A (en) Switch circuit for monolithic microwave integrated circuit device
JPH09181642A (ja) 通信端末装置
JP3343299B2 (ja) 出力回路
EP1235350A3 (en) Semiconductor switching device
JP3032611B2 (ja) マイクロ波増幅器のバイアス回路
JPH0418250Y2 (enExample)
JPH0244404B2 (enExample)
JP3864477B2 (ja) 高周波回路
JPS6016118Y2 (ja) 切換スイツチ回路
JP2503311Y2 (ja) マイクロ波電力増幅器切換回路