JPH09181056A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH09181056A JPH09181056A JP8318150A JP31815096A JPH09181056A JP H09181056 A JPH09181056 A JP H09181056A JP 8318150 A JP8318150 A JP 8318150A JP 31815096 A JP31815096 A JP 31815096A JP H09181056 A JPH09181056 A JP H09181056A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- plasma
- manufacturing
- layer film
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
- H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19950050905A KR970052974A (https=) | 1995-12-16 | 1995-12-16 | |
| KR1995P50905 | 1995-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09181056A true JPH09181056A (ja) | 1997-07-11 |
Family
ID=19440731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8318150A Pending JPH09181056A (ja) | 1995-12-16 | 1996-11-28 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5744012A (https=) |
| JP (1) | JPH09181056A (https=) |
| KR (1) | KR970052974A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093658A (en) * | 1997-12-22 | 2000-07-25 | Philips Electronics North America Corporation | Method for making reliable interconnect structures |
| JP3298528B2 (ja) * | 1998-12-10 | 2002-07-02 | 日本電気株式会社 | 回路設計方法および装置、情報記憶媒体、集積回路装置 |
| KR20040001867A (ko) * | 2002-06-29 | 2004-01-07 | 주식회사 하이닉스반도체 | 플라즈마 어택을 방지할 수 있는 반도체소자 제조방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4463255A (en) * | 1980-09-24 | 1984-07-31 | Varian Associates, Inc. | Apparatus for enhanced neutralization of positively charged ion beam |
| US4639301B2 (en) * | 1985-04-24 | 1999-05-04 | Micrion Corp | Focused ion beam processing |
| US4976843A (en) * | 1990-02-02 | 1990-12-11 | Micrion Corporation | Particle beam shielding |
-
1995
- 1995-12-16 KR KR19950050905A patent/KR970052974A/ko not_active Ceased
-
1996
- 1996-11-12 US US08/748,178 patent/US5744012A/en not_active Expired - Fee Related
- 1996-11-28 JP JP8318150A patent/JPH09181056A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US5744012A (en) | 1998-04-28 |
| KR970052974A (https=) | 1997-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20010403 |