KR970052974A - - Google Patents

Info

Publication number
KR970052974A
KR970052974A KR19950050905A KR19950050905A KR970052974A KR 970052974 A KR970052974 A KR 970052974A KR 19950050905 A KR19950050905 A KR 19950050905A KR 19950050905 A KR19950050905 A KR 19950050905A KR 970052974 A KR970052974 A KR 970052974A
Authority
KR
South Korea
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR19950050905A
Other languages
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR19950050905A priority Critical patent/KR970052974A/ko
Priority to US08/748,178 priority patent/US5744012A/en
Priority to JP8318150A priority patent/JPH09181056A/ja
Publication of KR970052974A publication Critical patent/KR970052974A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
KR19950050905A 1995-12-16 1995-12-16 Ceased KR970052974A (https=)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR19950050905A KR970052974A (https=) 1995-12-16 1995-12-16
US08/748,178 US5744012A (en) 1995-12-16 1996-11-12 Method for fabricating semiconductor device
JP8318150A JPH09181056A (ja) 1995-12-16 1996-11-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19950050905A KR970052974A (https=) 1995-12-16 1995-12-16

Publications (1)

Publication Number Publication Date
KR970052974A true KR970052974A (https=) 1997-07-29

Family

ID=19440731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR19950050905A Ceased KR970052974A (https=) 1995-12-16 1995-12-16

Country Status (3)

Country Link
US (1) US5744012A (https=)
JP (1) JPH09181056A (https=)
KR (1) KR970052974A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040001867A (ko) * 2002-06-29 2004-01-07 주식회사 하이닉스반도체 플라즈마 어택을 방지할 수 있는 반도체소자 제조방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093658A (en) * 1997-12-22 2000-07-25 Philips Electronics North America Corporation Method for making reliable interconnect structures
JP3298528B2 (ja) * 1998-12-10 2002-07-02 日本電気株式会社 回路設計方法および装置、情報記憶媒体、集積回路装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
US4976843A (en) * 1990-02-02 1990-12-11 Micrion Corporation Particle beam shielding

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040001867A (ko) * 2002-06-29 2004-01-07 주식회사 하이닉스반도체 플라즈마 어택을 방지할 수 있는 반도체소자 제조방법

Also Published As

Publication number Publication date
US5744012A (en) 1998-04-28
JPH09181056A (ja) 1997-07-11

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

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St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000