JPH09148494A - Resin sealing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve high performance and high density with such adaptability as several semiconductor devices being piled when they are used and which can not induce damage to the semiconductor chips or such improper as out of form regulation when they are manufactured. SOLUTION: A first lead frame 63 having inner leads 62 which fix a semiconductor chip 61 and of which near terminals are folded toward the lower direction, a second lead frame 65 having inner leads 64 which are piled with the first lead frame and of which near terminals are folded toward the upper direction and sealing resin 70 which seals a construction body to make a molded body 69, are provided. A rectangular recess 71 and a rectangular project 73 are formed on the lower and the upper surfaces of the molded body respectively, inner lead tips 62a of the first lead frame are arranged at a constant interval on the side wall facing the rectangular recess and one of the surfaces is exposured. Inner lead tips 64a of the second lead frame are arranged at a constant interval on the side wall facing the rectangular project and one of the surfaces is exposured.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device formed by resin-encapsulating a structure including a semiconductor chip, inner leads and the like.

[0002]

2. Description of the Related Art Generally, a conventional resin-encapsulated semiconductor device is, for example, as shown in FIGS. 17 and 18, a semiconductor chip a and inner ends on the left and right sides of the semiconductor chip a respectively close to the end face of the chip a. A plurality of inner leads b arranged in parallel, outer leads c connected to the outer ends of the inner leads b, and inner leads b corresponding to the electrode terminals d on the semiconductor chip main surface a1. A plurality of thin metal wires e that respectively connect to the bonding regions, and a sealing resin f for resin-sealing the semiconductor chip a, the inner leads b, and the thin metal wires e to form an integrated molded body, Each outer lead c extends outside the sealing resin f and is formed into a predetermined shape (L shape in the figure). 17 and 18, g is a die pad which is fixedly supported on the back surface a2 of the semiconductor chip via an adhesive h, and the die pad g is also sealed in the sealing resin f. The inner lead b, the outer lead c, and the die pad g are usually composed of one lead frame i,
The outer frame of the lead frame i, the dam bar, and the like are cut off after resin sealing. j is a mounting substrate.

The technical problems in packaging such a resin-encapsulated semiconductor device at a high density include thinning and miniaturization of the outer shape and a plurality of different types of semiconductor chips a within one encapsulating resin f. There is a modularization to be incorporated in the above, a chip mounting in which the semiconductor chip a is directly mounted on the mounting board j, and the like. The reduction in thickness of the resin-encapsulated semiconductor device has heretofore been realized by assembling the components by reducing their dimensions. That is, the semiconductor chip a is machined or chemically etched to process the standard thickness of 400 to 500 μm to 250 to 300 μm, and the lead frame i is rolled to a standard thickness of 2 to 2 μm.
The height of the loop of the metal fine wire e from the semiconductor chip main surface a1 is set to 300 to 400 μm, which is a standard value, to 100 to 150 μm by processing the metal thin wire e from 120 to 150 μm. Then, the thickness of the sealing resin f is molded to 1 mm or less, and then the outer lead c of the lead frame i projecting from the side surface of the resin molded body is plated with tin-excess tin-lead solder to a thickness of about 10 μm, A thin resin-sealed semiconductor device has been realized by trimming the dam bar of the lead frame i and then forming the outer lead c into a predetermined shape.

Further, miniaturization of the resin-sealed semiconductor device is
By omitting the die pad g and arranging the inner leads b of the lead frame i on the semiconductor chip main surface a1 or under the semiconductor chip back surface a2 to be mounted inside, the LOC (lead-on-chip) or COL is provided. (Chip-on-lead) structure, the electrode terminal d on the main surface a1 of the semiconductor chip and the bonding area of the inner lead b are connected by a thin metal wire e, and this structure is integrally sealed with a sealing resin f. It has been realized by molding. In order to make a resin-sealed semiconductor device into a multi-chip module, a plurality of semiconductor chips a of different types are fixed on a die pad g of a lead frame i and between the electrode terminals d on each semiconductor chip a or each of the semiconductor chips. Electrode terminal on a
This has been realized by forming a structure in which the metal wire e is connected between the and the bonding area of the inner lead b of the lead frame i, and integrally molding the structure with the sealing resin f. The mounting of the semiconductor chip a on the mounting board j is performed by directly fixing the semiconductor chip a cut out from the wafer to a predetermined position on the mounting board j with a silver paste adhesive, and then electrode terminals d on the main surface a1 of the semiconductor chip. And the bonding area of the inner lead b of the lead frame i between the thin metal wire e.
This has been realized by forming a structure connected by the above and integrally covering this structure with the sealing resin f.

[0005]

By the way, as a means for realizing the miniaturization and multifunction of the resin-encapsulated semiconductor device, the resin-encapsulated semiconductor multichip module in which the encapsulation resin portion is made thin and small and a plurality of chips are combined. It is generally used in combination with However, this method has a problem that an excessive external force at the time of manufacturing or a slight deviation from an appropriate working condition induces a failure such as damage of an internal semiconductor chip or a failure in shape specification. In addition, it is impossible to change the function of the first combination of a plurality of chips into one package, and therefore the function of the semiconductor device cannot be changed freely, which lacks flexibility.

The present invention has been made in view of the above points, and an object of the present invention is to provide a second or third external lead other than the outer lead on the outer shape of a package of a semiconductor device, and to use a plurality of external leads at the time of use. It is intended to provide a resin-encapsulated semiconductor device which can flexibly achieve high-performance and high-density by an aspect such as stacking semiconductor devices, and which does not induce defects such as breakage of semiconductor chips and out-of-specification at the time of manufacturing. It is a thing.

[0007]

In order to achieve the above-mentioned object, the invention according to claim 1 is a resin-encapsulated semiconductor device, wherein a semiconductor chip is fixed, and the semiconductor chip is fixed, and the vicinity of the tip is an external terminal. On the main surface of the semiconductor chip, a lead frame having a plurality of inner leads bent downward or upward to achieve the above, an electrically insulating sheet provided between the semiconductor chip and the inner leads of the lead frame, A plurality of thin metal wires respectively connecting the electrode terminals and the bonding regions of the inner leads corresponding thereto, and a sealing resin for resin-sealing the above-mentioned structure to form an integral molded body are provided. Of the lower surface and the upper surface of the molded body, two rectangular grooves are formed in parallel on the surface of the inner lead on the side where the external terminal portion is bent, and the side wall on the center side of each rectangular groove or the opposing side wall or The external terminal portions of the inner leads are arranged on the four side walls at regular intervals, and at least one surface of the external terminal portions is exposed. As a result, the two rectangular groove-shaped external terminals provided on the lower surface or the upper surface of the molded body of the resin-sealed semiconductor device are provided with rectangular protruding terminals or other resin-sealed terminals provided on the end or surface of the mounting board, respectively. A high-performance high-density stacked package module can be achieved by inserting and combining rectangular projecting external terminals provided on the molded body of the semiconductor device.

The invention according to claim 2 is, like the invention according to claim 1, as a resin-encapsulated semiconductor device, a semiconductor chip is fixed to the semiconductor chip, and the semiconductor chip is fixed to the semiconductor chip and the lower end is used as an external terminal. Corresponding to a lead frame having a plurality of inner leads bent upward, an electrically insulating sheet provided between the semiconductor chip and inner leads of the lead frame, and electrode terminals on the main surface of the semiconductor chip. A plurality of thin metal wires are respectively connected to the bonding regions of the inner leads, and a sealing resin for resin-sealing the above structure to form an integral molded body. Then, a rectangular groove is formed near the center of the surface of the inner lead on the bent side of the outer terminal portion of the lower surface and the upper surface of the molded body, and the inner lead is formed on the side wall or four side walls facing each other of the rectangular groove. The external terminal portions are arranged at regular intervals, and at least one surface of the external terminal portion is exposed. This allows
For a rectangular groove-shaped external terminal provided on the lower surface or the upper surface of the molded body of the resin-sealed semiconductor device, for a rectangular protruding terminal provided on the end or surface of the mounting board, or for a molded body of another resin-sealed semiconductor device. By inserting and combining the provided rectangular protruding external terminals, a high-performance high-density stacked package module can be achieved.

The invention according to claim 3 is the same as the invention according to claim 1, as a resin-sealed semiconductor device, a semiconductor chip is fixed to the semiconductor chip, and the semiconductor chip is fixed to the lower side or the lower end of the semiconductor chip to form an external terminal. Corresponding to a lead frame having a plurality of inner leads bent upward, an electrically insulating sheet provided between the semiconductor chip and inner leads of the lead frame, and electrode terminals on the main surface of the semiconductor chip. A plurality of thin metal wires are respectively connected to the bonding regions of the inner leads, and a sealing resin for resin-sealing the above structure to form an integral molded body. A rectangular protrusion is formed near the center of the surface of the inner lead on the side where the outer terminal portion is bent, of the lower surface and the upper surface of the molded body, and the inner lead is provided on the opposing side wall or four side wall of the rectangular protrusion. The external terminal portions are arranged at regular intervals, and at least one surface of the external terminal portion is exposed. Thereby, the rectangular projecting external terminal provided on the lower surface or the upper surface of the molded body of the resin-encapsulated semiconductor device, the terminal around the rectangular hollow hole provided on the surface of the mounting substrate, or for example, according to claim 2. A high-performance high-density stacked package module can be achieved by inserting and combining with a rectangular groove-shaped external terminal provided in a molded body like a resin-sealed semiconductor device.

According to a fourth aspect of the present invention, there is provided a resin-encapsulated semiconductor device, which comprises a semiconductor chip, a plurality of semiconductor chips fixed to the semiconductor chip, and bent downward so that the vicinity of the tip serves as an external terminal on the lower surface of the molded body. A first lead frame having an inner lead, and a second lead frame having a plurality of inner leads that overlap with the first lead frame and are bent upward so that the vicinity of the tip is an external terminal on the upper surface of the molded body. And an electrically insulating sheet provided between the semiconductor chip and the inner lead of the first lead frame, and a bonding region of the inner lead corresponding to an electrode terminal on the main surface of the semiconductor chip, respectively. A plurality of fine metal wires and a sealing resin for resin-sealing the above-described structure to form an integral molded body. A rectangular groove is formed near the center of the lower surface of the molded body, and a rectangular protrusion is formed near the center of the upper surface, and the inner leads of the first lead frame are formed on the opposite side walls or four side walls of the rectangular groove. The external terminal portions are arranged at regular intervals, and at least one surface of the external terminal portions is exposed. Also, the external terminal portions of the inner leads of the second lead frame are arranged at regular intervals on opposite side walls or four side walls of the rectangular protrusion, and at least one surface of the external terminal portion is exposed. And As a result, the rectangular protruding external terminals provided on the upper surface of the molded body of the resin-encapsulated semiconductor device are inserted into the terminals around the rectangular hollow hole provided on the back surface of the mounting board, and the lower surface of the molded body is formed. By inserting the rectangular projecting terminals provided on the surface of the second mounting board into the provided rectangular groove external terminals, the two mounting boards are connected by one semiconductor device, and a high-performance high-density system is achieved. it can. In addition, a plurality of semiconductor devices each having a semiconductor chip with a different function sealed with a resin are stacked by inserting the rectangular groove-shaped external terminals and the rectangular protrusion-shaped external terminals into each other, and stacking them. Can be achieved.

According to a fifth aspect of the present invention, in the resin-encapsulated semiconductor device according to the fourth aspect, the outer shape of the molded body is such that the upper surface and the lower surface are reversed. That is, a rectangular protrusion is formed near the center of the lower surface of the molded body, and a rectangular groove is formed near the center of the upper surface, and the outer terminals of the inner leads of the first lead frame are formed on the opposing side walls or four side walls of the rectangular protrusion. The parts are arranged at regular intervals, and at least one surface of the external terminal part is exposed. Further, external terminal portions of the inner leads of the second lead frame are arranged at regular intervals on opposite side walls or four side wall sides of the rectangular groove, and at least one surface of the external terminal portions is exposed. As a result, the rectangular groove-shaped external terminals provided on the upper surface of the molded body of the resin-encapsulated semiconductor device are inserted into the rectangular protruding terminals provided on the back surface of the mounting board, and the rectangular protrusions provided on the lower surface of the molded body. A high-performance high-density system can be achieved by connecting the two mounting boards with one semiconductor device by inserting the terminals around the rectangular hole formed on the surface of the second mounting board into the external terminals. it can. In addition, a plurality of semiconductor devices each having a semiconductor chip with a different function sealed with a resin are stacked by inserting the rectangular groove-shaped external terminals and the rectangular protrusion-shaped external terminals into each other, and stacking them. Can be achieved.

The invention according to claim 6 is the resin-encapsulated semiconductor device according to claim 2, 4, or 5,
Instead of the side wall of the rectangular groove, the external terminal portions of the inner leads are arranged at regular intervals on the bottom surface of the rectangular groove, and at least one surface of the external terminal portion is exposed. As a result, a functional module including a chip electronic component group can be inserted into the external terminal provided on the bottom surface of the rectangular groove formed on the upper surface of the molded body of the resin-encapsulated semiconductor device, or individual chip electronic components can be soldered. A high-performance high-density package module can be achieved by fixing and using.

According to a seventh aspect of the present invention, in the resin-encapsulated semiconductor device according to any one of the first to sixth aspects, the lead frame has a plurality of outer leads connected to corresponding inner leads. The outer leads are extended to the outside of the sealing resin and are molded into a predetermined shape. Thus, the outer leads can be connected and fixed to the terminals of the mounting board.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIGS. 1 and 2 show a resin-sealed semiconductor device A according to a first embodiment of the present invention. FIG. 1 is a plan view (bottom surface) of the semiconductor device A seen from the bottom surface thereof. 2) is a cross-sectional view taken along line I-I of FIG. 1. The semiconductor device A includes a semiconductor chip 1 having a rectangular shape, a lead frame 2 having a plurality of inner leads 23, 23, and an electrical lead provided between the semiconductor chip 1 and the inner leads 23 of the lead frame 2. , A plurality of thin metal wires 5, 5, ... For respectively connecting the electrically insulating sheet 3 and the bonding regions of the inner leads 23 corresponding to the electrode terminals 4 on the main surface 1a of the semiconductor chip 1 and the structure as described above. A sealing resin 7 for sealing the body with a resin to form an integral molded body 6.

Here, the lead frame 2 before resin sealing
As shown in FIG. 3, the rectangular outer frame 21 and the outer frame 2
A plurality of dam bars 22 and 22 (only two are shown in the figure) that are provided across the two long sides of No. 1 and are provided at predetermined intervals in the long side direction, and face each other from two adjacent dam bars 22 and 22. Inner leads 2 extending in the same direction
, And a plurality of outer leads 2 connected to the inner leads 23 with the dam bars 22, 22 sandwiched therebetween.
4, 24, ... Then, in the cutting step after the resin sealing, in the case of the present embodiment, other parts of the lead frame 2 except the inner lead 23 sealed in the sealing resin 7, that is, the outer frame 21, the dam bar 22 and the outer. The lead 24 is cut off.

Each inner lead 23 in the sealing resin 7
Is fixed to the back surface 1b of the semiconductor chip 1, and an insulating sheet 3 is interposed between the two for the purpose of electrical insulation and adhesion. The insulating sheet 3 is formed by applying a thermoplastic resin to a thickness of 5 to 30 μm on both surfaces of a thin substrate of 50 to 200 μm made of polyimide or glass epoxy. When the upper surface of the inner lead 23 and the back surface 1b of the semiconductor chip are fixed to each other with the insulating sheet 3 interposed, first, the lower surface of the insulating sheet 3 is aligned with a predetermined position on the upper surface of the inner lead 23 (see FIG. 3). Later 20
After pressurizing and bonding at a temperature of 0 to 450 ° C. and then aligning the semiconductor chip 1 at a predetermined position on the upper surface of the insulating sheet 3, the upper surface of the insulating sheet 3 and the semiconductor chip back surface 1
b is pressed at the above temperature and bonded together.

Further, the tip end portion 23a of each inner lead 23 is substantially downward (in the direction away from the semiconductor chip 1) at a position inside the fixing portion to the semiconductor chip back surface 1b in order to use it as an external terminal. It is bent at a right angle.
Then, on the lower surface of the molded body 6, that is, the surface on the tip side of each inner lead 23 that is bent, two rectangular grooves 11 and 11 that are parallel to each other and extend in the long side direction of the molded body 6 that are substantially orthogonal to each other. The outer terminal portions 23a, which are the tip portions of the inner leads 23, are arranged at regular intervals on the outer side wall (side wall facing the center side wall) of each rectangular groove 11. One surface of the external terminal portion 23a is exposed, and a metal such as gold, silver, copper, palladium or the like has a thickness of 2 to 15 μm on the surface in order to obtain good electrical conduction.
m plating 12 is applied.

Next, a method of manufacturing the resin-encapsulated semiconductor device A will be described. First, as shown in FIG. 3, a lead frame 2 including an outer frame 21, a dam bar 22, inner leads 23, and outer leads 24. And the tip of each inner lead 23 of the lead frame 2 is bent downward. Then, the lower surface of the electrically insulating sheet 3 is aligned with a predetermined position on the upper surface of the inner lead 23 of the lead frame 2, and then pressed and bonded at a temperature of 200 to 450 ° C., and subsequently, the predetermined surface of the upper surface of the electrically insulating sheet 3 is bonded. After the semiconductor chip 1 is fitted to the position, the upper surface of the electrically insulating sheet 3 and the back surface 1b of the semiconductor chip are pressed and bonded together at the temperature, and the lead frame 7 is slid and gradually cooled to allow the semiconductor chip 1 to move. The inner lead 23
Fix on top. This structure is used as the electrical insulation sheet 3
Using an ultrasonic thermocompression bonding wire bonder set in a temperature range in which the thermoplastic resin on the surface is not softened, the electrode terminals 4 on the semiconductor chip main surface 1a and the bonding regions on the upper surface of the inner leads 23 corresponding to the metal terminals are respectively provided. 5
Connect with.

Subsequently, the structure is sealed with a resin having two in-cavity rectangular projections 35, 35 arranged in parallel near the center of the cavity 33 of the lower mold 32 as shown in FIG. The mold 30 is set at a predetermined position. At this time, the surface of the tip portion (external terminal portion) 23a bent downward of the inner lead 23 is brought into contact with and fixed to the outer side surface of the rectangular projection 35 in each cavity. And
Clamping of the resin-sealed mold 30 is performed by raising the lower mold 32 until the surface of the upper mold 31 comes into contact with the surface of the lead frame 2 on the lower mold 32 and an appropriate clamp pressure is reached. To do. Next, in order to perform resin sealing, the sealing resin 7 is injected into the cavity 33 of the resin sealing mold 30.
In this resin encapsulation, the structure is integrally resin-encapsulated using a thermosetting or thermoplastic resin. The injection method is to perform the sealing resin 7 from a gate (not shown) provided in a part of the cavity 33 of the resin sealing mold 30 at a melting temperature of 150 to 400 ° C. After the molten sealing resin 7 is filled in and held for a certain period of time, the resin sealing mold 30 is opened and the resin molded body 6 is taken out from the cavity 33. The lower surface of the resin molded body 6 taken out has two rectangular grooves 11 arranged in parallel, and the outer side wall of each rectangular groove 11 is bent below inner leads 23 arranged at regular intervals. The surface of the external terminal portion 23a is exposed.

Thereafter, in order to obtain good electrical continuity with the exposed surface of the external terminal portion 23a of each inner lead 23, a metal such as gold, silver, copper or palladium is used for 2 to 15 parts.
The plating 12 of μm is applied. Finally, the outer frame 21, which is an unnecessary portion of the lead frame 2 protruding from the side surface of the resin molded body 6 in the shape of the resin-encapsulated semiconductor device A,
The resin-sealed semiconductor device A can be realized by cutting the dam bar 22 and the outer leads 24.

In such a resin-encapsulated semiconductor device A, a plurality of inner leads 23 are formed on the outer side walls of the two rectangular grooves 11, 11 provided on the lower surface of the resin molded body 6.
Since the external terminal portions 23a of each are exposed at one surface and are arranged at regular intervals, the external terminal portions 23 in the rectangular groove 11 are
A high-performance high-density stacked package by inserting a rectangular projecting terminal provided on the end or the surface of the mounting substrate or a rectangular projecting external terminal provided on a molded body of another resin-encapsulated semiconductor device into a and combining them with a. Modules can be achieved, and high-performance and high-density can be achieved quickly and flexibly. In addition, it is not necessary to make the resin molded body 6 thinner than necessary, and it is sufficient to process the semiconductor chip 1 mounted therein to a standard thickness.
It does not induce defects such as breakage and failure of shape specifications.

In the first embodiment, the external terminal portions 23a of the inner leads 23 are arranged at predetermined intervals on the outer side walls of the two rectangular grooves 11, 11 provided on the lower surface of the resin molded body 6. The invention, particularly the invention according to claim 1, arranges the external terminal portions 23a of the inner leads 23 at predetermined intervals on the side walls on the center side of each of the rectangular grooves 11, or the inner leads 23 on the side walls of the four sides of each of the rectangular grooves 11. The external terminal portions 23a may be arranged at predetermined intervals. Further, instead of the lower surface of the resin molded body 6, two rectangular grooves are formed on the upper surface of the resin molded body 6, and the inner leads are formed on the side wall on the center side of each rectangular groove or on the opposite outer side wall or four side walls. The external terminal portions 23a of 23 may be arranged at a predetermined interval.

(Second Embodiment) FIGS. 5 and 6 show a resin-encapsulated semiconductor device B according to a second embodiment of the present invention, and FIG. 5 is a plan view (bottom surface) of the semiconductor device B viewed from the bottom surface thereof. FIG. 6 is a sectional view taken along line JJ of FIG. The semiconductor device B, like the semiconductor device A of the first embodiment, has a rectangular semiconductor chip 1 and a plurality of inner leads that are fixed to the semiconductor chip 1 and that are bent downward in order to use the tips as external terminals. , A lead frame 2 having 23, 23, ..., An electrically insulating sheet 3 provided between the semiconductor chip 1 and the inner leads 23 of the lead frame 2, and electrodes on the main surface 1a of the semiconductor chip 1. A plurality of thin metal wires 5, 5, ... Which respectively connect the terminals 4 and the bonding regions of the inner leads 23 corresponding to each other, and a seal for resin-sealing the above structure to form an integrated molded body 6. It is composed of a stop resin 7.

The semiconductor device B is different from the semiconductor device A of the first embodiment in that only one rectangular groove 41 is formed in the vicinity of the center of the lower surface of the resin molding 6, and the rectangular groove 41 extends in the lateral direction. The length is set larger than that of the semiconductor device A of the first embodiment. External terminal portions 23a, which are bent front end portions of the inner leads 23 of the lead frame 2, are arranged at regular intervals on two opposing long side walls of the rectangular groove 41. One surface of the portion 23a is exposed, and a metal such as gold, silver, copper, or palladium is used for the surface of the portion 23a in order to obtain good electrical conduction.
A plating 42 of ˜15 μm is applied.

In the method of manufacturing the semiconductor device B, at the time of resin encapsulation, the resin encapsulation mold 30 having one in-cavity rectangular projection 35 near the center of the cavity 33 of the lower mold 32. (See FIG. 3), the inner lead 2
The surface of the distal end portion (external terminal portion) 23a bent downward of 3 is brought into contact with and fixed to two opposing side surfaces of the rectangular protrusion 35 in the cavity.

In the resin-encapsulated semiconductor device B of the second embodiment, a plurality of side walls on the opposite long sides of one rectangular groove 41 provided near the center of the lower surface of the resin molded body 6 are provided. Since the external terminal portions 23a of the inner leads 23 are exposed at one surface and are arranged at regular intervals, the rectangular groove 4
By inserting and combining the external terminal portion 23a in 1 with a rectangular projection terminal provided on the end or surface of the mounting substrate or a rectangular projection external terminal provided on a molded body of another resin-encapsulated semiconductor device, it is possible to increase the height. A functional high-density stacked package module can be achieved, and high functional density can be achieved quickly and flexibly. Further, as in the case of the first embodiment, the semiconductor chip 1 is not damaged or defective in conformity with the shape standard during manufacturing.

In the second embodiment, the external terminal portions 23a of the inner lead 23 are provided at predetermined intervals on the two side walls on the opposite long sides of one rectangular groove 41 provided near the center of the lower surface of the resin molded body 6. However, according to the present invention, particularly the invention according to claim 2, the external terminal portions 23a of the inner leads 23 are arranged at predetermined intervals on the two side walls of the rectangular groove 41 facing each other on the shorter side, or the rectangular groove 41 is arranged. Inner leads 2 on the four side walls of 41
The external terminal portions 23a of No. 3 may be arranged at a predetermined interval. Further, instead of the lower surface of the resin molded body 6, the resin molded body 6
A rectangular groove may be formed in the vicinity of the center of the upper surface of the above, and the external terminal portions 23a of the inner leads 23 may be arranged at predetermined intervals on opposite side walls or four side walls of the rectangular groove.

(Third Embodiment) FIGS. 7 and 8 show a resin-encapsulated semiconductor device C according to a third embodiment of the present invention, and FIG. 7 is a plan view (bottom surface) of the semiconductor device C viewed from the bottom surface thereof. FIG. 8 is a sectional view taken along line KK of FIG. 7. The semiconductor device C, like the semiconductor device A of the first embodiment, has a rectangular semiconductor chip 1 and a plurality of inner leads that are fixed to the semiconductor chip 1 and are bent downward in order to use the tips as external terminals. , A lead frame 2 having 23, 23, ..., An electrically insulating sheet 3 provided between the semiconductor chip 1 and the inner leads 23 of the lead frame 2, and electrodes on the main surface 1a of the semiconductor chip 1. A plurality of thin metal wires 5, 5, ... Which respectively connect the terminals 4 and the bonding regions of the inner leads 23 corresponding to each other, and a seal for resin-sealing the above structure to form an integrated molded body 6. It is composed of a stop resin 7.

The semiconductor device C differs from the semiconductor device A of the first embodiment in that one rectangular protrusion 51 is formed near the center of the lower surface of the resin molding 6. External terminal portions 23a, which are bent front end portions of the inner leads 23 of the lead frame 2, are arranged at regular intervals on two opposing long side walls of the rectangular protrusion 51. One surface of the external terminal portion 23a is exposed, and gold, silver, copper, and
A plating 52 of 2 to 15 μm is applied with a metal such as palladium.

In the method of manufacturing the semiconductor device C, when the resin is sealed, the resin-sealed mold 30 having a rectangular groove in the cavity near the center of the cavity 33 of the lower mold 32 is used ( (See FIG. 3), the surface of the tip portion (external terminal portion) 23a bent downward of the inner lead 23 is fixed by contacting with the two side surfaces on the opposite long sides of the rectangular groove in the cavity.

In the resin-encapsulated semiconductor device C of the third embodiment, a plurality of side walls on the opposite long sides of one rectangular protrusion 51 provided near the center of the lower surface of the resin molded body 6 are provided. Since the external terminal portions 23a of the inner leads 23 are exposed at one surface and are arranged at regular intervals, the external terminal portions 23a of the rectangular protrusions 51 are formed in the vicinity of the rectangular hollow hole provided on the surface of the mounting board. A high-performance high-density laminated package module is obtained by inserting the terminals or the external terminal portions 23a in the rectangular grooves 41 provided in the resin molded body 6 into the external terminal portions 23a like the resin-encapsulated semiconductor device B of the second embodiment. It can be achieved, and high functional density can be achieved quickly and flexibly. Further, as in the case of the first embodiment, the semiconductor chip 1 is not damaged or defective in conformity with the shape standard during manufacturing.

In the third embodiment, the external terminal portions 23a of the inner leads 23 are arranged at predetermined intervals on the two long side walls facing each other of the rectangular protrusion 51 provided near the center of the lower surface of the resin molded body 6. However, according to the present invention, particularly the invention according to claim 3, the external terminal portions 23a of the inner leads 23 are arranged at predetermined intervals on the two short side walls of the rectangular projection 51 which face each other, or the four sides of the rectangular projection 51 are arranged. The external terminal portions 23a of the inner leads 23 may be arranged on the side walls of the above at predetermined intervals. Further, instead of the lower surface of the resin molded body 6, a rectangular protrusion is formed near the center of the upper surface of the resin molded body 6, and the external terminal portions 23a of the inner leads 23 are provided at predetermined intervals on the opposite side walls or four side walls of the rectangular protrusion. It may be configured to be arranged at.

(Fourth Embodiment) FIGS. 9 to 11 show a resin-encapsulated semiconductor device D according to a fourth embodiment of the present invention, and FIG. 9 is a plan view of the semiconductor device D seen from its upper surface, FIG. 10 is a plan view (bottom view) of the semiconductor device D as seen from its lower surface, and FIG.
FIG. 10 is a sectional view taken along line LL in FIG. 9. Semiconductor device D
Is a rectangular semiconductor chip 61 and a first lead frame 63 having a plurality of inner leads 62, 62, ....
A second lead frame 65 having a plurality of inner leads 64, 64, ..., And the semiconductor chip 61.
And the inner lead 62 of the first lead frame 63
A plurality of thin metal wires 68, 68 for respectively connecting an electrically insulating sheet 66 provided between the inner surface of the semiconductor chip 61 and the bonding area of the inner lead 64 corresponding to the electrode terminal 67 on the main surface 61a of the semiconductor chip 61. , And a sealing resin 70 for sealing the above structure with a resin to form an integral molded body 69.

Here, the first lead frame 63 before resin sealing has an outer frame, a dam bar, an inner lead 62 and an outer lead, as in the case of the lead frame 2 shown in FIG. The second lead frame 65 before stopping has an outer frame, a dam bar, and an inner lead 64. Then, in the cutting step after resin sealing, in the case of the present embodiment, the first and second lead frames 63 and 65 are
Inner leads 62 both sealed in the sealing resin 70,
Except for 64, other sites are excised.

The upper surface of each inner lead 62 of the first lead frame 63 in the encapsulating resin 70 is fixed to the back surface 61b of the semiconductor chip 61, and for the purpose of electrical insulation and adhesion between them. The insulating sheet 66 is interposed. The insulating sheet 66 is formed by applying a thermoplastic resin to a thickness of 5 to 30 μm on both sides of a thin substrate of polyimide or glass epoxy having a thickness of 50 to 200 μm. Further, the tip end portion 62a of each inner lead 62 is
In order to use it as an external terminal, it is bent at a substantially right angle downward (in a direction away from the semiconductor chip 61) at a position inside the fixing portion with the back surface 61b of the semiconductor chip. A rectangular groove 71 is formed in the vicinity of the center of the lower surface of the molded body 69, and an external terminal portion 62a, which is the tip of the inner lead 62, is fixed on the two long side walls of the rectangular groove 71 that face each other. It is arranged at intervals. The external terminal portion 6
One surface of 2a is exposed, and the surface thereof is plated with a metal 72 such as gold, silver, copper or palladium to a thickness of 2 to 15 [mu] m in order to obtain good electrical conduction.

On the other hand, the base end portion of each inner lead 64 of the second lead frame 65 in the sealing resin 70 is superposed on the first lead frame 63 (inner lead 62), and the tip portion of each inner lead 64. 64a extends along the side end portion of the semiconductor chip 61 to be used as an external terminal, and is then bent upward at a substantially right angle. A rectangular protrusion 73 is formed in the vicinity of the center of the upper surface of the molded body 69, and an external terminal portion 64a, which is the tip of the inner lead 64, is fixed on the two long side walls of the rectangular groove 73 that face each other. It is arranged at intervals. The external terminal portion 6
One surface of 4a is exposed, and the surface thereof is plated with a metal 74 such as gold, silver, copper, or palladium to a thickness of 2 to 15 μm to obtain good electrical conduction.

The method of manufacturing the semiconductor device D is basically the same as the method of manufacturing the semiconductor device A of the first embodiment, but the inner lead 62 of the first lead frame 63 and the semiconductor chip 61 are not combined. The electrode terminals 6 on the main surface 61a of the semiconductor chip are fixed after the electrical insulation sheet 66 is interposed therebetween.
Prior to connecting the bonding area on the upper surface of the inner lead 62 corresponding to 7 with the thin metal wire 68, the second lead frame 65 is placed on the first lead frame 63 in an overlapping manner. At this time, the positional relationship between the lead frames 63 and 65 is determined by the positioning holes provided in the outer frames thereof. In addition, at the time of resin sealing, the upper mold 31
Of the lower mold 32 having an in-cavity rectangular groove near the center of the cavity 33 and having an in-cavity rectangular projection 35 near the center of the cavity 33 of the lower mold 32.
(See FIG. 3), the surface of the tip portion (external terminal portion) 62a bent downward of each inner lead 62 in the first lead frame 63 is formed on the opposite long side of the rectangular protrusion 35 in the cavity. To the two side surfaces of the inner lead 64 of the second lead frame 65, the surfaces of the front end portions (external terminal portions) 64a of the second lead frame 65 are provided on the two opposite long sides of the rectangular groove in the cavity. Fix by touching each side.

In the resin-sealed semiconductor device D of the fourth embodiment, the external terminal portion 64a of the rectangular protrusion 73 provided near the center of the upper surface of the molded body 69 is formed in a rectangular shape on the back surface of the mounting board. A rectangular groove 71 provided near the center of the lower surface of the molded body 69 while being inserted into the terminal around the hollowed hole.
By inserting the rectangular protruding terminal provided on the surface of the second mounting board into the external terminal portion 62a of
A high-performance high-density system can be achieved by connecting the semiconductor devices D. Further, a plurality of semiconductor devices D, D, ... Each of which is formed by resin-sealing a semiconductor chip 61 having a different function, are connected to each other by the external terminal portion 62a of the rectangular groove 71 and the external terminal portion 64a of the rectangular protrusion 73. A high-performance high-density stacked package module can be achieved by inserting and stacking. Therefore, high function and high density can be achieved quickly and flexibly. Further, as in the case of the first embodiment, the semiconductor chip 61 is not damaged at the time of manufacture, and the defect such as the deviation from the shape standard is not induced.

In the fourth embodiment, the external terminal portion 62a of the inner lead 62 of the first lead frame 63 is provided on two side walls on the opposite long sides of the rectangular groove 71 provided near the center of the lower surface of the molded body 69. The external terminal portions 64a of the inner leads 64 of the second lead frame 65 are arranged at predetermined intervals on two opposing long side walls of the rectangular protrusion 73 provided near the center of the upper surface of the molded body 69. According to the present invention, particularly the invention according to claim 4, the external terminal portions 62a of the inner leads 62 of the first lead frame 63 are provided on the two short side walls of the rectangular groove 71 which are opposed to each other, and the external terminals 62a are opposed to the rectangular protrusions 73. The second lead frame 6 is provided on the two side walls on the short side.
5, the external terminal portions 64a of the inner leads 64 are arranged at predetermined intervals, and the external terminal portions 62a of the inner leads 62 of the first lead frame 63 are attached to the four side walls of the rectangular groove 71 and the rectangular protrusions 73 of the rectangular protrusion 73. Second on the four side walls
The outer terminal portions 64a of the inner leads 64 of the lead frame 65 may be arranged at predetermined intervals.

(Fifth Embodiment) FIGS. 12 to 14 show a resin-sealed semiconductor device E according to a fifth embodiment of the present invention.
2 is a plan view of the semiconductor device E as seen from its upper surface, FIG. 13 is a plan view (bottom view) of the semiconductor device E as seen from its lower surface, and FIG. 14 is a sectional view taken along line MM in FIG. In the semiconductor device E, the outer shape of the semiconductor device D of the fourth embodiment and that of the molded body 69 are formed so that the upper surface and the lower surface are reversed.

That is, the rectangular protrusion 81 is formed near the center of the lower surface of the molded body 69, and the two side walls of the rectangular protrusion 81 facing each other on the longer sides are provided with the tips of the inner leads 62 of the first lead frame 63. External terminals 62a are arranged at regular intervals. One surface of the external terminals 62a is exposed and is provided with gold, silver, copper, palladium or the like to obtain good electrical continuity. 2 to 15 μm with metal
Plating 82 is applied. On the other hand, a rectangular groove 83 is formed in the vicinity of the center of the upper surface of the molded body 69, and the two side walls on the opposite long sides of the rectangular groove 83 are the tips of the inner leads 64 of the second lead frame 65. External terminal part 6
4a are arranged at regular intervals, and the external terminal portion 64a
One surface is exposed and is made of a metal such as gold, silver, copper or palladium for good electrical conduction.
A plating 84 of 5 μm is applied. The semiconductor device E
The other structure is the same as that of the semiconductor device D of the fourth embodiment, and the same members are denoted by the same reference numerals and the description thereof is omitted.

Also in the resin-sealed semiconductor device E of the fifth embodiment, the resin-sealed semiconductor device D of the fourth embodiment is used.
As in the case of, the two mounting boards are combined into one semiconductor device E.
And a high-performance high-density system can be achieved by stacking a plurality of semiconductor devices E, E, ... As a result, it is possible to achieve high-performance and high-density in a quick and versatile manner without causing damage such as breakage of the semiconductor chip 61 or failure of shape specification during manufacturing.

In the fifth embodiment, the inner leads 62 of the first lead frame 63 are provided on the two opposite side walls of the rectangular protrusion 81 provided near the center of the lower surface of the molded body 69.
The external terminal portions 62a of the inner lead 64 of the second lead frame 65 are arranged at predetermined intervals on the two side walls on the opposite long sides of the rectangular groove 83 provided near the center of the upper surface of the molded body 69. However, according to the present invention, particularly the invention according to claim 5, the external terminal portion 62a of the inner lead 62 of the first lead frame 63 is provided on the two side walls of the rectangular projection 81 on the opposite short side. The second lead frame 6 is provided on the two side walls of the rectangular groove 83 on the opposite short sides.
5, the external terminal portions 64a of the inner leads 64 are arranged at predetermined intervals, and the external terminal portions 62a of the inner leads 62 of the first lead frame 63 are attached to the side walls of the four sides of the rectangular protrusion 81 and the rectangular groove 83 is formed. Second on the four side walls
The outer terminal portions 64a of the inner leads 64 of the lead frame 65 may be arranged at predetermined intervals.

(Sixth Embodiment) FIG. 11 is a plan view of a resin-sealed semiconductor device according to a sixth embodiment of the present invention. This semiconductor device is a modification of each of the semiconductor devices B, D and E of the second, fourth and fifth embodiments. In the following description, for convenience, the semiconductor device of this embodiment will be referred to as the semiconductor device B of the second embodiment.
Will be described using the same reference numerals as those of the semiconductor device B.

That is, in the semiconductor device B of the second embodiment, the external terminal portions 23a of the inner leads 23 arranged on the two side walls on the opposite long sides of the rectangular groove 41 of the molded body 6 are opposed to each other.
In the present embodiment, is a flat surface without being bent downward, and is arranged at regular intervals on the bottom surface of the rectangular groove 17 of the molded body 6. Then, the external terminal portion 2 of each inner lead 23
The surface of 3a is exposed and is made of a metal such as gold, silver-copper, or palladium for 2 to 15 to obtain good electrical conduction.
A μm plating 42 is applied.

In the resin-sealed semiconductor device of the sixth embodiment, the chip terminal component group is formed for the external terminal portion 23a of the inner lead 23 provided on the bottom surface of the rectangular groove 41 of the molded body 6. Plug in the function module,
Since high-performance high-density package modules can be achieved by fixing individual chip electronic components with solder and using them, high-performance high-density packages can be achieved without inducing defects such as breakage of semiconductor chips 1 or out of shape specifications during manufacturing. Can be achieved quickly and flexibly.

(Seventh Embodiment) FIG. 16 is a sectional view of a resin-sealed semiconductor device according to a seventh embodiment of the present invention. This semiconductor device is a modification of the semiconductor device B of the second embodiment.

In the case of the second embodiment, the outer lead 24 of the lead frame 2 is attached to the outer frame 2 in the cutting step after resin sealing.
1 and the dam bar 22 were cut off, but in this embodiment,
This outer lead 24 is not cut off, and the lead frame 2
Left as part of. That is, the lead frame 2 of the resin-encapsulated semiconductor device which is a finished product is connected to and encapsulated with a plurality of inner leads 23, 23, ... Encapsulated in the encapsulating resin 7. The outer lead 24 has a plurality of outer leads 24, 24, ... That extend to the outside of the resin 7. Each outer lead 24 has a predetermined shape, for example, an I-shape shown in FIG. 16 (a), and FIG. 16 (b). It is formed into the J-shape shown or the L-shape shown in FIG.

In the resin-sealed semiconductor device of the seventh embodiment, in addition to the effect of the second embodiment, the outer leads 24 extending outside the sealing resin 7 are connected to the terminals of the mounting board. Since it can be fixed by mounting, it also has an effect that it can be easily attached to the mounting board.

In the seventh embodiment, the present invention, particularly the invention according to claim 7 is applied as a modified example of the semiconductor device B of the second embodiment, but the first, third and third embodiments are described. 6
The present invention can be similarly applied as a modification of each semiconductor device of the embodiment.

[0052]

As described above, according to the resin-encapsulated semiconductor device of the present invention, the mounting board or other resin sealing is performed by utilizing the rectangular groove-shaped external terminals or the rectangular protrusion-shaped external terminals provided in the molded body. Since the semiconductor device can be easily connected and combined with the static semiconductor device, high function and high density can be achieved quickly and flexibly. Moreover, it is not necessary to reduce the thickness of the molded body more than necessary, and it is sufficient to process the semiconductor chip mounted inside to a standard thickness, thus causing defects such as damage to the semiconductor chip and out of shape specifications during manufacturing. There is no such thing.

Particularly, according to the inventions according to claims 4 and 5, a high-performance high-density system can be achieved by connecting two mounting boards by one semiconductor device, and a plurality of semiconductors having different functions from each other can be achieved. Since the devices can be stacked to achieve a high-performance and high-density stacked package module, flexibility for high-performance and high-density can be further enhanced.

Further, in the invention according to claim 7, since the outer leads extending to the outside of the sealing resin can be connected and fixed to the terminals of the mounting board, the mounting on the mounting board can be facilitated. It also has an effect.

[Brief description of the drawings]

FIG. 1 is a bottom view of a resin-sealed semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II of FIG.

FIG. 3 is a plan view of a lead frame before resin sealing.

FIG. 4 is a vertical cross-sectional view of a resin sealing mold.

FIG. 5 is a view, corresponding to FIG. 1, showing a second embodiment of the present invention.

6 is a cross-sectional view taken along the line JJ of FIG.

FIG. 7 is a view corresponding to FIG. 1 showing a third embodiment of the present invention.

8 is a cross-sectional view taken along the line KK of FIG.

FIG. 9 is a plan view of a resin-sealed semiconductor device according to a fourth embodiment of the invention.

FIG. 10 is a bottom view of the same.

11 is a cross-sectional view taken along the line LL in FIG.

FIG. 12 is a view, corresponding to FIG. 9, showing a fifth embodiment of the present invention.

13 is a view equivalent to FIG. 10.

14 is a cross-sectional view taken along line MM in FIG.

FIG. 15 is a bottom view of the resin-sealed semiconductor device according to the sixth embodiment of the present invention.

FIG. 16 is a sectional view of a resin-sealed semiconductor device according to a seventh embodiment of the invention.

FIG. 17 is a perspective view of a resin-encapsulated semiconductor device showing a conventional example.

FIG. 18 is a sectional view of the same.

[Explanation of symbols]

1,61 Semiconductor chip 1a, 61a Semiconductor chip main surface 1b, 61b Semiconductor chip back surface 2 Lead frame 3,66 Electrical insulating sheet 4,67 Electrode terminal 5,68 Metal thin wire 6,69 Molded body 7,70 Sealing resin 11 , 41, 71, 83 Rectangular groove 23, 62, 64 Inner lead 23a, 62a, 64a Inner lead tip portion (external terminal portion) 24 Outer lead 51, 73, 81 Rectangular protrusion 63 First lead frame 65 Second lead flame

Claims (7)

[Claims] 1. A semiconductor chip, a lead frame having a plurality of inner leads which are fixed to the semiconductor chip and are bent downward or upward in order to make the vicinity of the tip an external terminal, and the semiconductor chip and the lead frame. An electrically insulating sheet provided between the inner lead and a plurality of thin metal wires respectively connecting the bonding area of the inner lead corresponding to the electrode terminal on the main surface of the semiconductor chip, and the structure as described above. And a sealing resin for sealing the resin into an integrated molded body,
Of the lower surface and the upper surface of the molded body, two rectangular grooves are formed in parallel on the surface of the inner lead on the side where the external terminal portion is bent, and the side wall on the center side of each rectangular groove or the opposing side wall or four sides is formed. A resin-encapsulated semiconductor device, wherein external terminals of the inner leads are arranged at regular intervals on the side wall, and at least one surface of the external terminals is exposed. 2. A semiconductor chip, a lead frame having a plurality of inner leads which are fixed to the semiconductor chip and are bent downward or upward in order to make the vicinity of the tip an external terminal, and the lead frame having the semiconductor chip and the lead frame. An electrically insulating sheet provided between the inner lead and a plurality of thin metal wires respectively connecting the bonding area of the inner lead corresponding to the electrode terminal on the main surface of the semiconductor chip, and the structure as described above. And a sealing resin for sealing the resin into an integrated molded body,
Of the lower surface and the upper surface of the molded body, a rectangular groove is formed in the vicinity of the center of the surface of the inner lead on the side where the outer terminal portion is bent, and the inner wall of the inner lead is formed on side walls or four side walls facing the rectangular groove. A resin-encapsulated semiconductor device, wherein external terminal portions are arranged at regular intervals, and at least one surface of the external terminal portions is exposed. 3. A semiconductor chip, a lead frame having a plurality of inner leads which are fixed to the semiconductor chip and are bent downward or upward in order to make the vicinity of the tip an external terminal, and the semiconductor chip and the lead frame. An electrically insulating sheet provided between the inner lead and a plurality of thin metal wires respectively connecting the bonding area of the inner lead corresponding to the electrode terminal on the main surface of the semiconductor chip, and the structure as described above. And a sealing resin for sealing the resin into an integrated molded body,
Of the lower surface and the upper surface of the molded body, a rectangular protrusion is formed in the vicinity of the center of the surface of the inner lead on the side where the outer terminal portion is bent. A resin-encapsulated semiconductor device, wherein external terminal portions are arranged at regular intervals, and at least one surface of the external terminal portions is exposed. 4. A first lead frame having a semiconductor chip, a plurality of inner leads fixed to the semiconductor chip, and bent downward so that the vicinity of the tip serves as an external terminal on the lower surface of the molded body, and the first lead frame. A second lead frame having a plurality of inner leads that are bent upward so as to overlap with the lead frame of the first lead frame so that the vicinity of the tip thereof serves as an external terminal on the upper surface of the molded body; and an inner lead of the semiconductor chip and the first lead frame. An electrically insulating sheet provided between the leads and a plurality of thin metal wires respectively connecting the bonding areas of the inner leads corresponding to the electrode terminals on the main surface of the semiconductor chip, and the above structure. It is composed of a sealing resin for resin sealing to form an integral molded body, and a rectangular groove near the center of the lower surface of the molded body,
Rectangular protrusions are formed near the center of the upper surface, and external terminal portions of the inner leads of the first lead frame are arranged at regular intervals on opposing side walls or four side walls of the rectangular groove. At least one surface of the inner surface of the second lead frame is provided with an outer terminal portion of the inner lead of the second lead frame arranged at regular intervals on opposite side walls or four side walls of the rectangular protrusion. A resin-encapsulated semiconductor device, wherein at least one surface of a terminal portion is exposed. 5. The resin-encapsulated semiconductor device according to claim 4, wherein the outer shape of the molded body has an upper surface and a lower surface that are opposite to each other.
A rectangular protrusion is formed near the center of the lower surface of the molded body, and a rectangular groove is formed near the center of the upper surface, and the external leads of the inner lead in the first lead frame are formed on the opposing side walls or four side walls of the rectangular protrusion. Portions are arranged at regular intervals, at least one surface of the external terminal portion is exposed, and the opposite side walls or four side walls of the rectangular groove are provided on the outer side of the inner lead of the second lead frame. A resin-sealed semiconductor device, wherein terminal portions are arranged at regular intervals, and at least one surface of the external terminal portion is exposed. 6. The resin-encapsulated semiconductor device according to claim 2, 4, or 5, wherein the external terminal portions of the inner leads are arranged at regular intervals on the bottom surface of the rectangular groove instead of the side wall of the rectangular groove. And at least one surface of the external terminal portion is exposed and provided. 7. The resin-encapsulated semiconductor device according to claim 1, wherein the lead frame has a plurality of outer leads connected to corresponding inner leads, and each of the outer leads. The resin-encapsulated semiconductor device is characterized in that the lead is extended to the outside of the encapsulating resin and is molded into a predetermined shape.