JPH088476A - 電子密度記憶デバイス - Google Patents

電子密度記憶デバイス

Info

Publication number
JPH088476A
JPH088476A JP5208184A JP20818493A JPH088476A JP H088476 A JPH088476 A JP H088476A JP 5208184 A JP5208184 A JP 5208184A JP 20818493 A JP20818493 A JP 20818493A JP H088476 A JPH088476 A JP H088476A
Authority
JP
Japan
Prior art keywords
charge transfer
dicyanoquinonediimine
electric field
transfer complex
dcnqi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5208184A
Other languages
English (en)
Japanese (ja)
Inventor
Richard S Potember
リチャード・エス・ポッテンバー
Shoji Yamaguchi
祥司 山口
Carla A Viands
カーラ・エー・ビアンズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Johns Hopkins University
Original Assignee
Mitsubishi Chemical Corp
Johns Hopkins University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp, Johns Hopkins University filed Critical Mitsubishi Chemical Corp
Publication of JPH088476A publication Critical patent/JPH088476A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
JP5208184A 1992-08-04 1993-08-02 電子密度記憶デバイス Pending JPH088476A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US924709 1986-10-29
US07/924,709 US5216661A (en) 1991-07-22 1992-08-04 Electron density storage device using a stm

Publications (1)

Publication Number Publication Date
JPH088476A true JPH088476A (ja) 1996-01-12

Family

ID=25450590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5208184A Pending JPH088476A (ja) 1992-08-04 1993-08-02 電子密度記憶デバイス

Country Status (4)

Country Link
US (1) US5216661A (enExample)
EP (1) EP0582290B1 (enExample)
JP (1) JPH088476A (enExample)
DE (1) DE69314874T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012204484A (ja) * 2011-03-24 2012-10-22 Tokyo Institute Of Technology 有機半導体

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446687A (en) * 1994-01-31 1995-08-29 Terastore, Inc. Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom
US6304481B1 (en) 1994-01-31 2001-10-16 Terastore, Inc. Method and apparatus for storing data using spin-polarized electrons
US5546337A (en) * 1994-01-31 1996-08-13 Terastore, Inc. Method and apparatus for storing data using spin-polarized electrons
WO1996017345A1 (en) * 1994-11-29 1996-06-06 Matsushita Electric Industrial Co., Ltd. Method of recording and reading information and information recording device
DE10357044A1 (de) * 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
US7277314B2 (en) * 2004-05-27 2007-10-02 Cabot Microelectronics Corporation Mobile ion memory
DE102004037151A1 (de) * 2004-07-30 2006-03-23 Infineon Technologies Ag Verfahren zur Bildung von Speicherschichten
JP2008059740A (ja) * 2006-08-24 2008-03-13 Rohm & Haas Co 情報の書き込みおよび読み込みのための装置および方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3522232A1 (de) * 1985-06-21 1987-01-02 Basf Ag Radikalionensalze
DE3789373T2 (de) * 1986-12-24 1994-06-23 Canon Kk Aufnahmegerät und Wiedergabegerät.
JP2778714B2 (ja) * 1988-03-02 1998-07-23 株式会社東芝 色素有機薄膜及び色素有機薄膜素子
JP2743213B2 (ja) * 1990-07-25 1998-04-22 キヤノン株式会社 記録及び／又は再生を行なう装置および方法
US5161149A (en) * 1991-07-22 1992-11-03 The Johns Hopkins University Electron density storage device and method using STM

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012204484A (ja) * 2011-03-24 2012-10-22 Tokyo Institute Of Technology 有機半導体

Also Published As

Publication number Publication date
DE69314874T2 (de) 1998-03-19
EP0582290B1 (en) 1997-10-29
EP0582290A3 (enExample) 1994-04-06
DE69314874D1 (de) 1997-12-04
US5216661A (en) 1993-06-01
EP0582290A2 (en) 1994-02-09

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