DE69314874T2 - Vorrichtung zum Speichern mittels Elektronendichte - Google Patents

Vorrichtung zum Speichern mittels Elektronendichte

Info

Publication number
DE69314874T2
DE69314874T2 DE69314874T DE69314874T DE69314874T2 DE 69314874 T2 DE69314874 T2 DE 69314874T2 DE 69314874 T DE69314874 T DE 69314874T DE 69314874 T DE69314874 T DE 69314874T DE 69314874 T2 DE69314874 T2 DE 69314874T2
Authority
DE
Germany
Prior art keywords
dicyanoquinone diimine
dicyanoquinone
diimine
tcnq
electron density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69314874T
Other languages
German (de)
English (en)
Other versions
DE69314874D1 (de
Inventor
Richard S. Dayton Maryland 21036 Potember
Carla Ann Adelphi Maryland 20783 Viands
Shoji C/O Tsukuba Research Center Ami-Machi Inashiki-Gun Ibaraki-Ken Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Johns Hopkins University
Original Assignee
Johns Hopkins University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johns Hopkins University filed Critical Johns Hopkins University
Application granted granted Critical
Publication of DE69314874D1 publication Critical patent/DE69314874D1/de
Publication of DE69314874T2 publication Critical patent/DE69314874T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
DE69314874T 1992-08-04 1993-08-04 Vorrichtung zum Speichern mittels Elektronendichte Expired - Fee Related DE69314874T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/924,709 US5216661A (en) 1991-07-22 1992-08-04 Electron density storage device using a stm

Publications (2)

Publication Number Publication Date
DE69314874D1 DE69314874D1 (de) 1997-12-04
DE69314874T2 true DE69314874T2 (de) 1998-03-19

Family

ID=25450590

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314874T Expired - Fee Related DE69314874T2 (de) 1992-08-04 1993-08-04 Vorrichtung zum Speichern mittels Elektronendichte

Country Status (4)

Country Link
US (1) US5216661A (enExample)
EP (1) EP0582290B1 (enExample)
JP (1) JPH088476A (enExample)
DE (1) DE69314874T2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446687A (en) * 1994-01-31 1995-08-29 Terastore, Inc. Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom
US6304481B1 (en) 1994-01-31 2001-10-16 Terastore, Inc. Method and apparatus for storing data using spin-polarized electrons
US5546337A (en) * 1994-01-31 1996-08-13 Terastore, Inc. Method and apparatus for storing data using spin-polarized electrons
WO1996017345A1 (en) * 1994-11-29 1996-06-06 Matsushita Electric Industrial Co., Ltd. Method of recording and reading information and information recording device
DE10357044A1 (de) * 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
US7277314B2 (en) * 2004-05-27 2007-10-02 Cabot Microelectronics Corporation Mobile ion memory
DE102004037151A1 (de) * 2004-07-30 2006-03-23 Infineon Technologies Ag Verfahren zur Bildung von Speicherschichten
JP2008059740A (ja) * 2006-08-24 2008-03-13 Rohm & Haas Co 情報の書き込みおよび読み込みのための装置および方法
JP5807858B2 (ja) * 2011-03-24 2015-11-10 国立大学法人東京工業大学 有機薄膜トランジスタ用膜形成用組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3522232A1 (de) * 1985-06-21 1987-01-02 Basf Ag Radikalionensalze
DE3789373T2 (de) * 1986-12-24 1994-06-23 Canon Kk Aufnahmegerät und Wiedergabegerät.
JP2778714B2 (ja) * 1988-03-02 1998-07-23 株式会社東芝 色素有機薄膜及び色素有機薄膜素子
JP2743213B2 (ja) * 1990-07-25 1998-04-22 キヤノン株式会社 記録及び／又は再生を行なう装置および方法
US5161149A (en) * 1991-07-22 1992-11-03 The Johns Hopkins University Electron density storage device and method using STM

Also Published As

Publication number Publication date
JPH088476A (ja) 1996-01-12
EP0582290B1 (en) 1997-10-29
EP0582290A3 (enExample) 1994-04-06
DE69314874D1 (de) 1997-12-04
US5216661A (en) 1993-06-01
EP0582290A2 (en) 1994-02-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee