JPH0878558A - Package for semiconductor element - Google Patents
Package for semiconductor elementInfo
- Publication number
- JPH0878558A JPH0878558A JP21451994A JP21451994A JPH0878558A JP H0878558 A JPH0878558 A JP H0878558A JP 21451994 A JP21451994 A JP 21451994A JP 21451994 A JP21451994 A JP 21451994A JP H0878558 A JPH0878558 A JP H0878558A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- insulating base
- lid
- package
- sealing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子を内部に収
容するための半導体素子収納用パッケージに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element therein.
【０００２】[0002]
【従来の技術】従来、半導体素子を収容するための半導
体素子収納用パッケージ、特に廉価な半導体素子収納用
パッケージは一般に、エポキシ樹脂から成り、上面に半
導体素子を収容するための凹部を有する絶縁基体と、前
記絶縁基体の凹部側面から外側にかけて導出する複数個
の外部リード端子と、前記絶縁基体の上面にエポキシ樹
脂から成る封止材を介して取着され、絶縁基体の凹部を
塞ぐ蓋体とから構成されており、絶縁基体の凹部底面に
半導体素子を樹脂製接着材を介して取着するとともに該
半導体素子の各電極を外部リード端子の一端にボンディ
ングワイヤを介して電気的に接続し、しかる後、前記絶
縁基体の上面に蓋体を封止材を介して接合させ、半導体
素子を絶縁基体と蓋体とから成る容器内部に気密に収容
することによって最終製品としての半導体装置となる。2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element, particularly an inexpensive semiconductor element housing package, is generally made of an epoxy resin and has an insulating base having a recess for housing a semiconductor element on its upper surface. A plurality of external lead terminals extending outward from the side surface of the recess of the insulating base, and a lid body attached to the upper surface of the insulating base via a sealing material made of epoxy resin to close the recess of the insulating base. The semiconductor element is attached to the bottom surface of the recess of the insulating substrate via a resin adhesive, and each electrode of the semiconductor element is electrically connected to one end of the external lead terminal via a bonding wire. After that, a lid is bonded to the upper surface of the insulating base through a sealing material, and the semiconductor element is hermetically housed in a container including the insulating base and the lid. A semiconductor device as a final product.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、この従
来の半導体素子収納用パッケージにおいては、絶縁基体
及び封止材がエポキシ樹脂から成り、該エポキシ樹脂は
耐湿性に劣るため絶縁基体と蓋体とから成る容器内部に
半導体素子を気密に収容した後、大気中に含まれる水分
が絶縁基体及び封止材を通して半導体素子が収容されて
いる凹部内に入り込み易く、凹部内に水分が入り込むと
半導体素子の電極やボンディングワイヤ等に酸化腐食が
発生し、電極やボンディングワイヤに断線が発生して半
導体装置としての機能が喪失するという欠点を有してい
た。However, in this conventional package for accommodating semiconductor elements, the insulating base and the sealing material are made of epoxy resin, and since the epoxy resin is inferior in moisture resistance, the insulating base and the lid are made. After air-tightly housing the semiconductor element in the container, the moisture contained in the atmosphere easily enters the recess containing the semiconductor element through the insulating substrate and the sealing material. There is a drawback in that the electrodes and the bonding wires are oxidized and corroded, and the electrodes and the bonding wires are broken to lose the function as a semiconductor device.
【０００４】また内部に収容する半導体素子が固体撮像
素子で、蓋体がガラス等の透明部材から成る場合には、
容器内部に水分が入り込むと蓋体に結露によるくもりが
発生し、固体撮像素子に良好な光電変換を起こさせるこ
とができないという欠点も有していた。Further, when the semiconductor element housed inside is a solid-state image pickup element and the lid body is made of a transparent member such as glass,
When water enters the inside of the container, clouding occurs due to dew condensation on the lid, which also has a drawback that good photoelectric conversion cannot be caused in the solid-state imaging device.
【０００５】[0005]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は絶縁基体と蓋体とから成る容器内部に大
気中に含まれる水分が入り込むのを有効に防止し、容器
内部に収容される半導体素子を長期間にわたり正常、且
つ安定に作動させることができる半導体素子収納用パッ
ケージを提供することにある。SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to effectively prevent moisture contained in the atmosphere from entering the inside of a container composed of an insulating base and a lid, and It is an object of the present invention to provide a semiconductor element housing package capable of normally and stably operating the semiconductor element housed in the semiconductor device for a long period of time.
【０００６】[0006]
【課題を解決するための手段】本発明は、絶縁基体と蓋
体とを封止材を介し接合させることによって内部に半導
体素子を気密に収容するようになした半導体素子収納用
パッケージであって、前記絶縁基体及び封止材を樹脂で
形成するとともに該絶縁基体及び封止材中に、表面に半
径が10乃至100 オングストロームの細孔を有する吸湿材
を埋入させたことを特徴とするものである。SUMMARY OF THE INVENTION The present invention is a package for housing a semiconductor element, wherein a semiconductor element is hermetically housed inside by joining an insulating base and a lid with a sealing material. The insulating base and the encapsulant are formed of resin, and a hygroscopic material having pores with a radius of 10 to 100 angstrom is embedded in the insulating base and the encapsulant. Is.
【０００７】また本発明は前記吸湿材が樹脂から成る絶
縁基体に1.0 乃至50重量％埋入されていることを特徴と
するものである。Further, the present invention is characterized in that the hygroscopic material is embedded in an insulating substrate made of resin in an amount of 1.0 to 50% by weight.
【０００８】更に本発明は前記吸湿材が樹脂から成る封
止材に1.0 乃至50重量％埋入されていることを特徴とす
るものである。Furthermore, the present invention is characterized in that the hygroscopic material is embedded in a sealing material made of a resin in an amount of 1.0 to 50% by weight.
【０００９】[0009]
【作用】本発明の半導体素子収納用パッケージによれ
ば、樹脂から成る絶縁基体及び封止材に、表面に半径が
10乃至100 オングストロームの細孔を有する吸湿材を埋
入させたことから絶縁基体及び封止材を通して絶縁基体
と蓋体とから成る容器内部に大気中に含まれる水分が入
り込もうとしてもその入り込みは吸湿材で阻止され、そ
の結果、容器内部に収容した半導体素子の電極及び半導
体素子の各電極と外部リード端子とを電気的に接続する
ボンディングワイヤに酸化腐食が発生することは殆どな
く、半導体素子を長期間にわたり正常、且つ安定に作動
させることが可能となる。According to the package for accommodating a semiconductor element of the present invention, the radius is formed on the surface of the insulating base made of resin and the sealing material.
Since the hygroscopic material having pores of 10 to 100 angstroms is embedded, even if the moisture contained in the atmosphere enters into the container composed of the insulating base and the lid through the insulating base and the sealing material, it does not enter. It is prevented by the moisture absorbent, and as a result, the electrodes of the semiconductor element housed inside the container and the bonding wires for electrically connecting the respective electrodes of the semiconductor element and the external lead terminals hardly oxidize and corrode, and the semiconductor element Can be operated normally and stably for a long period of time.
【００１０】また内部に収容する半導体素子が固体撮像
素子で、蓋体がガラス等の透明部材から成る場合、蓋体
に結露によるくもりが発生することはなく、固体撮像素
子に正確な光電変換を起こさせることも可能となる。When the semiconductor element housed inside is a solid-state image pickup element and the lid is made of a transparent member such as glass, clouding due to dew condensation does not occur on the lid, and accurate photoelectric conversion is performed on the solid-state image pickup element. It is possible to wake it up.
【００１１】[0011]
【実施例】次に本発明を添付の図面に基づき詳細に説明
する。図１は本発明の半導体素子収納用パッケージの一
実施例を示し、1 は絶縁基体、2 は蓋体である。この絶
縁基体1 と蓋体2 とで半導体素子3 を収容するための絶
縁容器4 が構成される。The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 constitute an insulating container 4 for housing the semiconductor element 3.
【００１２】前記絶縁基体1 はその上面中央部に半導体
素子3 を収容するための凹部1aを有し、該凹部1a底面に
は半導体素子3 が樹脂製接着剤を介して接着固定され
る。The insulating substrate 1 has a recess 1a for accommodating the semiconductor element 3 in the center of its upper surface, and the semiconductor element 3 is adhered and fixed to the bottom surface of the recess 1a via a resin adhesive.
【００１３】前記絶縁基体1 は、例えばエポキシ樹脂等
の樹脂から成り、所定型内にタブレット状に成形された
粉末のエポキシ樹脂をセットして注入するとともにこれ
を１５０〜２００℃の温度で熱硬化させることによって
製作される。The insulating substrate 1 is made of a resin such as an epoxy resin. A powdery epoxy resin molded into a tablet is set in a predetermined mold and injected, and this is thermoset at a temperature of 150 to 200.degree. It is produced by
【００１４】また前記絶縁基体1 はその内部に、表面に
半径が10乃至100 オングストロームの細孔を有する吸湿
材が埋入されており、該吸湿材はエポキシ樹脂から成る
絶縁基体1 中を水分が通過するのを有効に阻止する作用
を為す。Further, the insulating substrate 1 is embedded therein with a hygroscopic material having pores with a radius of 10 to 100 angstroms on the surface thereof, and the hygroscopic material contains moisture in the insulating substrate 1 made of epoxy resin. It acts to effectively block passage.
【００１５】前記絶縁基体1 はその内部に吸湿材が埋入
されていることから絶縁基体1 と蓋体2 とから成る容器
4 内部に半導体素子3 を収容した後、大気中に含まれる
水分が絶縁基体1 を通して容器4 内部に入り込もうとし
てもその入り込みは吸湿材で有効に阻止され、その結
果、容器4 内部に水分が入り込むことは殆どなく、容器
4 内部に収容する半導体素子3 の電極等に酸化腐食が発
生するのを皆無として半導体素子3 を長期間にわたり正
常、且つ安定に作動させることが可能となる。Since the insulating base 1 has a hygroscopic material embedded therein, a container composed of the insulating base 1 and the lid 2.
4 After the semiconductor element 3 is housed inside, even if moisture contained in the atmosphere tries to enter the inside of the container 4 through the insulating substrate 1, the entry is effectively blocked by the hygroscopic material. Almost no entry, container
4 It is possible to operate the semiconductor element 3 normally and stably for a long period of time by eliminating the occurrence of oxidative corrosion on the electrodes and the like of the semiconductor element 3 housed inside.
【００１６】尚、前記吸湿材は例えば、球状のシリカ粒
子から成り、タブレット状に成形された粉末のエポキシ
樹脂を所定型内にセットして注入し、絶縁基体1 を製作
する際にエポキシ樹脂に球状のシリカ粒子を予め添加混
合しておくことによって絶縁基体1 内に埋入される。The hygroscopic material is composed of, for example, spherical silica particles, and a powdered epoxy resin molded in a tablet shape is set in a predetermined mold and injected to produce an epoxy resin when the insulating substrate 1 is manufactured. The spherical silica particles are added and mixed in advance to be embedded in the insulating substrate 1.
【００１７】また前記吸湿材はその表面の細孔半径が10
オングストローム未満であると絶縁基体1 に侵入した水
分を完全に吸着させることができず、また100 オングス
トロームを越えると吸湿材の比重が軽くなり、エポキシ
樹脂から成る絶縁基体1 の全体に吸湿材を分散埋入させ
ることが困難となる。従って、前記吸湿材はその表面の
細孔半径が10乃至100 オングストロームのものに限定さ
れる。The moisture absorbent has a surface having a pore radius of 10
If it is less than angstrom, the moisture that has penetrated into the insulating base 1 cannot be completely adsorbed, and if it exceeds 100 angstrom, the specific gravity of the hygroscopic material becomes light and the hygroscopic material is dispersed throughout the insulating base 1 made of epoxy resin. It becomes difficult to embed. Therefore, the hygroscopic material is limited to those having a surface pore radius of 10 to 100 angstroms.
【００１８】更に前記吸湿材は絶縁基体1 に対し1.0 重
量％未満の埋入であれば絶縁基体1における水分の通過
が有効に阻止されず、また50重量％を越えると吸湿材を
混合させたタブレット状に成形された粉末のエポキシ樹
脂を所定型内にセットして注入し、絶縁基体1 を製作す
る際、エポキシ樹脂の流れ性が悪くなって所望形状の絶
縁基体1 が得られなくなる傾向にある。従って、前記吸
湿材は絶縁基体1 に対し1.0 乃至50重量％の範囲で埋入
させておくことが好ましい。Further, if the moisture absorbent is embedded in the insulating substrate 1 in an amount of less than 1.0% by weight, the passage of moisture through the insulating substrate 1 is not effectively blocked, and if it exceeds 50% by weight, the moisture absorbent is mixed. When an insulating base 1 is manufactured by setting and injecting a powdered epoxy resin into a predetermined mold in a predetermined mold, the flowability of the epoxy resin tends to deteriorate and the insulating base 1 having a desired shape cannot be obtained. is there. Therefore, it is preferable that the hygroscopic material is embedded in the insulating substrate 1 in the range of 1.0 to 50% by weight.
【００１９】前記絶縁基体1 はまたその凹部1a内側から
外側にかけて複数個の外部リード端子5 が取着されてお
り、該外部リード端子5 の凹部1a内側に露出する各々の
部位には半導体素子3 の各電極がボンディングワイヤ6
を介して電気的に接続され、また外側に露出する部位に
は外部電気回路が接続される。A plurality of external lead terminals 5 are attached to the insulating base 1 from the inside to the outside of the recess 1a, and the semiconductor element 3 is attached to each portion of the external lead terminal 5 exposed inside the recess 1a. Each electrode of bonding wire 6
And an external electric circuit is connected to a portion exposed to the outside.
【００２０】前記外部リード端子5 は鉄ーニッケルーコ
バルト合金や鉄ーニッケル合金等の金属材料から成り、
例えば鉄ーニッケルーコバルト合金等のインゴット(
塊) を圧延加工法や打ち抜き加工法等、従来周知の金属
加工法を採用することによって所定の板状に形成され
る。The external lead terminal 5 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy,
For example, iron-nickel-cobalt alloy ingot (
The lump is formed into a predetermined plate shape by adopting a conventionally known metal processing method such as a rolling processing method or a punching processing method.
【００２１】尚、前記外部リード端子5 はタブレット状
に成形された粉末のエポキシ樹脂を所定型内にセットし
注入することによって絶縁基体１を製作する際、所定型
内の所定位置に予めセットしておくことによって絶縁基
体1 の凹部1a内側から外側にかけて一体的に取着され
る。The external lead terminals 5 are set in advance in predetermined positions in a predetermined mold when the insulating substrate 1 is manufactured by setting and injecting powdery epoxy resin in a tablet shape into a predetermined mold. By this, the insulating base 1 is integrally attached from the inside to the outside of the recess 1a.
【００２２】また前記外部リード端子5 はその露出する
表面にニッケル、金等の耐蝕性に優れ、且つロウ材と濡
れ性のよい金属を0.1 乃至20.0μm の厚みに層着させて
おくと外部リード端子5 の酸化腐食を有効に防止するこ
とができるとともに外部リード端子5 とボンディングワ
イヤ6 の接続及び外部リード端子5 と外部電気回路との
接続を強固となすことができる。従って、前記外部リー
ド端子5 はその露出する表面にニッケル、金等を0.1 乃
至20.0μm の厚みに層着させておくことが好ましい。The external lead terminal 5 is formed by depositing a metal having excellent corrosion resistance such as nickel and gold on the exposed surface and having good wettability with the brazing material in a thickness of 0.1 to 20.0 μm. Oxidation and corrosion of the terminal 5 can be effectively prevented, and the connection between the external lead terminal 5 and the bonding wire 6 and the connection between the external lead terminal 5 and the external electric circuit can be made firm. Therefore, it is preferable that the exposed surface of the external lead terminal 5 is layered with nickel, gold or the like in a thickness of 0.1 to 20.0 μm.
【００２３】前記外部リード端子5 が取着された絶縁基
体1 は更にその上面に蓋体2 が封止材7 を介して取着さ
れ、蓋体2 で絶縁基体1 の凹部1aを塞ぎ、絶縁基体1 と
蓋体2 とから成る容器4 の内部を気密に封止することに
よって容器4 内部に半導体素子3 が気密に収容される。The insulating base 1 to which the external lead terminals 5 are attached has a lid 2 attached to the upper surface of the insulating base 1 via a sealing material 7, and the lid 2 closes the recess 1a of the insulating base 1 to provide insulation. The semiconductor element 3 is housed in the container 4 by hermetically sealing the inside of the container 4 including the base 1 and the lid 2.
【００２４】前記蓋体2 はガラス、セラミック、金属、
樹脂等の板材から成り、封止材7 によって絶縁基体1 上
に接合取着される。The lid 2 is made of glass, ceramic, metal,
It is made of a plate material such as resin, and is bonded and attached onto the insulating base 1 by the sealing material 7.
【００２５】また前記蓋体2 を絶縁基体1 に接合取着さ
せる封止材7 はエポキシ樹脂等から成り、液状のエポキ
シ樹脂を絶縁基体1 の上面、或いは蓋体2 の下面に予め
従来周知のスクリーン印刷法等により印刷塗布し、所定
厚みに被着させておくことによって絶縁基体1 と蓋体2
との間に配される。The encapsulating material 7 for bonding and attaching the lid 2 to the insulating base 1 is made of epoxy resin or the like, and liquid epoxy resin is applied to the upper surface of the insulating base 1 or the lower surface of the lid 2 by a known method. Insulating substrate 1 and lid 2 are formed by printing and applying by screen printing, etc.
It is placed between and.
【００２６】前記封止材7 はまたその内部に、表面に半
径が10乃至100 オングストロームの細孔を有する吸湿材
が埋入されており、該吸湿材は封止材7 中を水分が通過
するのを有効に阻止する作用を為す。The encapsulating material 7 also has a hygroscopic material embedded in its interior, which has pores with a radius of 10 to 100 angstroms. The hygroscopic material allows moisture to pass through the encapsulating material 7. To effectively prevent the
【００２７】前記封止材7 はその内部に吸湿材が埋入さ
れていることから絶縁基体1 と蓋体2 とから成る容器4
内部に半導体素子3 を収容した後、大気中に含まれる水
分が封止材7 を通して容器4 内部に入り込もうとしても
その入り込みは吸湿材で有効に阻止され、その結果、容
器4 内部に水分が入り込むことは殆どなく、容器4 内部
に収容する半導体素子3 の電極等に酸化腐食が発生する
のを皆無として半導体素子3 を長期間にわたり正常、且
つ安定に作動させることが可能となる。Since the encapsulating material 7 has a hygroscopic material embedded therein, the container 4 composed of the insulating base 1 and the lid 2 is formed.
After the semiconductor element 3 is housed inside, even if moisture contained in the atmosphere tries to enter the inside of the container 4 through the sealing material 7, the moisture is effectively blocked by the hygroscopic material. It hardly enters, and it is possible to operate the semiconductor element 3 normally and stably for a long period of time by eliminating the occurrence of oxidative corrosion on the electrodes and the like of the semiconductor element 3 housed in the container 4.
【００２８】尚、前記吸湿材としては例えば、球状のシ
リカ粒子から成り、液状のエポキシ樹脂を絶縁基体1 の
上面、或いは蓋体2 の下面にスクリーン印刷法等により
印刷塗布することによって絶縁基体1 の上面や蓋体2 の
下面に封止材7 を被着させる際、液状のエポキシ樹脂内
に予めシリカ粒子を添加混合させておくことによって封
止材7 中に埋入される。The hygroscopic material is made of, for example, spherical silica particles, and a liquid epoxy resin is applied on the upper surface of the insulating base 1 or the lower surface of the lid 2 by screen printing or the like to form the insulating base 1. When the encapsulating material 7 is applied to the upper surface of the and the lower surface of the lid body 2, silica particles are added and mixed in advance in the liquid epoxy resin to be embedded in the encapsulating material 7.
【００２９】また前記吸湿材はその表面の細孔半径が10
オングストローム未満であると封止材7 に侵入した水分
を完全に吸着させることができず、また100 オングスト
ロームを越えると液状のエポキシ樹脂を絶縁基体1 の上
面や蓋体2 の下面にスクリーン印刷法等により印刷塗布
することによって封止材7 を被着させる際、液状エポキ
シ樹脂の印刷性が悪くなって絶縁基体1 上面や蓋体2 の
下面に封止材7 を均一厚みに被着させることが困難とな
る。従って、前記吸湿材はその表面の細孔半径が10乃至
100 オングストロームのものに限定される。The moisture absorbent has a surface with a pore radius of 10
If it is less than angstrom, it is not possible to completely adsorb the moisture that has penetrated into the encapsulating material 7, and if it exceeds 100 angstrom, liquid epoxy resin is applied to the upper surface of the insulating substrate 1 or the lower surface of the lid body 2 by screen printing or the like. When the encapsulating material 7 is applied by printing with, the printability of the liquid epoxy resin deteriorates and the encapsulating material 7 can be applied to the upper surface of the insulating substrate 1 and the lower surface of the lid body 2 with a uniform thickness. It will be difficult. Therefore, the moisture absorbent has a pore radius of 10 to 10 on its surface.
Limited to 100 Å.
【００３０】更に前記吸湿材は封止材7 に対し1.0 重量
％未満の埋入であれば封止材7 における水分の通過が有
効に阻止されず、また50重量％を越えると吸湿材を混合
させた液状のエポキシ樹脂を絶縁基体1 の上面や蓋体2
の下面にスクリーン印刷法等により印刷塗布することに
よって封止材7 を被着させる際、液状エポキシ樹脂の印
刷性が悪くなって絶縁基体1 上面や蓋体2 の下面に封止
材7 を均一厚みに被着させることが困難となる傾向にあ
る。従って、前記吸湿材は封止材7 に対し1.0ないし50
重量％の範囲で埋入させておくことが好ましい。Further, if the hygroscopic material is less than 1.0% by weight embedded in the encapsulating material 7, passage of water in the encapsulating material 7 is not effectively blocked, and if it exceeds 50% by weight, the hygroscopic material is mixed. Apply the liquid epoxy resin to the upper surface of the insulating substrate 1 and the lid 2
When the encapsulant 7 is applied by printing on the underside of the substrate by screen printing or the like, the printability of the liquid epoxy resin deteriorates and the encapsulant 7 is evenly applied to the upper surface of the insulating substrate 1 and the lower surface of the lid 2. It tends to be difficult to adhere to the thickness. Therefore, the hygroscopic material is 1.0 to 50 relative to the sealing material 7.
It is preferable to embed it in the range of wt%.
【００３１】かくして本発明の半導体素子収納用パッケ
ージによれば、絶縁基体1 の凹部1a底面に半導体素子3
を接着剤を介して接着固定するとともに半導体素子3 の
各電極を外部リード端子5 にボンディングワイヤ6 を介
して電気的に接続し、しかる後、絶縁基体1 の上面に蓋
体2 を封止材7 を 介して接合させ、絶縁基体1 と蓋体
2 とから成る容器4 内部に半導体素子3 を気密に収容す
ることによって製品としての半導体装置となる。Thus, according to the semiconductor element housing package of the present invention, the semiconductor element 3 is formed on the bottom surface of the recess 1a of the insulating substrate 1.
And the electrodes of the semiconductor element 3 are electrically connected to the external lead terminals 5 via the bonding wires 6, and then the lid 2 is attached to the upper surface of the insulating base 1 as a sealing material. Insulating substrate 1 and lid
A semiconductor device as a product is obtained by hermetically housing the semiconductor element 3 in a container 4 composed of 2 and.
【００３２】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり，例えば半導体素子が固体撮像素
子であり、蓋体がガラス等の透明部材から成る半導体素
子収納用パッケージにも適用し得る。この場合、絶縁容
器内部へ水分が入り込むことは殆どないことから蓋体に
結露によるくもりが発生することはなく、固体撮像素子
に正確な光電変換を起こさせることが可能となる。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention. For example, the semiconductor element is a solid-state image pickup element, and the lid is a lid. It can also be applied to a package for accommodating semiconductor elements, the body of which is made of a transparent member such as glass. In this case, since water hardly enters the inside of the insulating container, clouding due to dew condensation does not occur on the lid, and accurate photoelectric conversion can be caused in the solid-state imaging device.
【００３３】[0033]
【発明の効果】本発明の半導体素子収納用パッケージに
よれば、樹脂から成る絶縁基体及び封止材に、表面に半
径が１０乃至１００オングストロームの細孔を有する吸
湿材を埋入させたことから絶縁基体及び封止材を通して
絶縁基体と蓋体とから成る容器内部に大気中に含まれる
水分が入り込もうとしてもその入り込みは吸湿材で阻止
され、その結果、容器内部に収容した半導体素子の電極
及び半導体素子の各電極と外部リード端子とを電気的に
接続するボンディングワイヤに酸化腐食が発生すること
は殆どなく、半導体素子を長期間にわたり正常、且つ安
定に作動させることが可能となる。According to the package for accommodating a semiconductor element of the present invention, a hygroscopic material having pores with a radius of 10 to 100 angstroms is embedded in the surface of an insulating base made of resin and a sealing material. Even if water contained in the atmosphere tries to enter the inside of the container composed of the insulating base and the lid through the insulating base and the sealing material, the moisture is prevented from entering, and as a result, the electrodes of the semiconductor element housed inside the container. Also, the bonding wire that electrically connects each electrode of the semiconductor element and the external lead terminal is hardly oxidized and corroded, and the semiconductor element can be normally and stably operated for a long period of time.
【００３４】また内部に収容する半導体素子が固体撮像
素子で、蓋体がガラス等の透明部材から成る場合、蓋体
に結露によるくもりが発生することはなく、固体撮像素
子に正確な光電変換を起こさせることも可能となる。When the semiconductor element housed inside is a solid-state image sensor and the lid is made of a transparent material such as glass, clouding due to dew condensation does not occur on the lid, and accurate photoelectric conversion is performed on the solid-state image sensor. It is possible to wake it up.
【図１】本発明の半導体素子収納用パッケージの一実施
例を示す断面図である。FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.
１・・・・・絶縁基体 ２・・・・・蓋体 ３・・・・・半導体素子 ４・・・・・絶縁容器 ５・・・・・外部リード端子 ７・・・・・封止材 1 ... Insulating substrate 2 ... Lid 3 ... Semiconductor element 4 ... Insulating container 5 ... External lead terminal 7 ... Encapsulating material
Claims (3)
ることによって内部に半導体素子を気密に収容するよう
になした半導体素子収納用パッケージであって、前記絶
縁基体及び封止材を樹脂で形成するとともに該絶縁基体
及び封止材中に、表面に半径が10乃至100 オングストロ
ームの細孔を有する吸湿材を埋入させたことを特徴とす
る半導体素子収納用パッケージ。1. A package for accommodating a semiconductor element, wherein a semiconductor element is hermetically housed inside by joining an insulating base and a lid via a sealing material, said insulating base and sealing material. A package for storing a semiconductor element, characterized in that a hygroscopic material having a radius of 10 to 100 angstroms on its surface is embedded in the insulating substrate and the sealing material.
乃至50重量％埋入されていることを特徴とする請求項１
に記載の半導体素子収納用パッケージ。2. The insulating substrate made of resin as the moisture absorbent is 1.0
Or 50% by weight is embedded.
The package for storing a semiconductor element according to.
至50重量％埋入されていることを特徴とする請求項１に
記載の半導体素子収納用パッケージ。3. The package for housing a semiconductor element according to claim 1, wherein the moisture absorbing material is embedded in a sealing material made of resin in an amount of 1.0 to 50% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21451994A JP3426726B2 (en) | 1994-09-08 | 1994-09-08 | Package for storing semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21451994A JP3426726B2 (en) | 1994-09-08 | 1994-09-08 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0878558A true JPH0878558A (en) | 1996-03-22 |
| JP3426726B2 JP3426726B2 (en) | 2003-07-14 |
Family
ID=16657071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21451994A Expired - Lifetime JP3426726B2 (en) | 1994-09-08 | 1994-09-08 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3426726B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003096301A (en) * | 2001-09-25 | 2003-04-03 | Shin Etsu Chem Co Ltd | Silicone rubber composition for encapsulating/sealing electric/electronic parts |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4871183A (en) * | 1971-12-24 | 1973-09-26 | ||
| JPS5375860A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Electronic parts having glass sealed package |
| JPS60176256A (en) * | 1984-02-23 | 1985-09-10 | Nec Corp | Semiconductor device |
| JPS62221137A (en) * | 1986-03-24 | 1987-09-29 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS63120464A (en) * | 1986-11-10 | 1988-05-24 | Toshiba Corp | Solid-state image pickup device |
| JPS6382945U (en) * | 1986-11-17 | 1988-05-31 | ||
| JPH01294476A (en) * | 1988-05-07 | 1989-11-28 | Fujitsu Ltd | Container for receiving resin-sealed electronic component |
| JPH0360056A (en) * | 1989-07-28 | 1991-03-15 | Tomoegawa Paper Co Ltd | Solid state image sensing device sealing adhesive |
| JPH0485859A (en) * | 1990-07-26 | 1992-03-18 | Mitsui Petrochem Ind Ltd | Airtightly sealed package and bonding member |
| JPH07153864A (en) * | 1993-11-30 | 1995-06-16 | Kyocera Corp | Package for housing electronic part |
-
1994
- 1994-09-08 JP JP21451994A patent/JP3426726B2/en not_active Expired - Lifetime
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4871183A (en) * | 1971-12-24 | 1973-09-26 | ||
| JPS5375860A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Electronic parts having glass sealed package |
| JPS60176256A (en) * | 1984-02-23 | 1985-09-10 | Nec Corp | Semiconductor device |
| JPS62221137A (en) * | 1986-03-24 | 1987-09-29 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS63120464A (en) * | 1986-11-10 | 1988-05-24 | Toshiba Corp | Solid-state image pickup device |
| JPS6382945U (en) * | 1986-11-17 | 1988-05-31 | ||
| JPH01294476A (en) * | 1988-05-07 | 1989-11-28 | Fujitsu Ltd | Container for receiving resin-sealed electronic component |
| JPH0360056A (en) * | 1989-07-28 | 1991-03-15 | Tomoegawa Paper Co Ltd | Solid state image sensing device sealing adhesive |
| JPH0485859A (en) * | 1990-07-26 | 1992-03-18 | Mitsui Petrochem Ind Ltd | Airtightly sealed package and bonding member |
| JPH07153864A (en) * | 1993-11-30 | 1995-06-16 | Kyocera Corp | Package for housing electronic part |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003096301A (en) * | 2001-09-25 | 2003-04-03 | Shin Etsu Chem Co Ltd | Silicone rubber composition for encapsulating/sealing electric/electronic parts |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3426726B2 (en) | 2003-07-14 |
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