JP3046193B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounted on an information processing device such as a computer.

[0002]

2. Description of the Related Art Conventionally, a pre-mold type or a mold type semiconductor device mounted on an information processing device such as a computer is, for example, a pre-mold type semiconductor device.
An insulating base made of epoxy resin and having a concave portion for accommodating a semiconductor element on an upper surface, and a plurality of external lead terminals extending from the inside to the outside of the concave portion of the insulating base,
A semiconductor element housing package is prepared, comprising a lid attached to the upper surface of the insulating substrate via a sealing material and closing the concave portion of the insulating substrate, and then a semiconductor element is mounted on the bottom surface of the concave portion of the insulating substrate. Each electrode of the semiconductor element is electrically connected to one end of the external lead terminal via a bonding wire, and then a lid is sealed on the upper surface of the insulating base with a resin. It is manufactured by joining the semiconductor element through a stopper and hermetically housing the semiconductor element inside a container composed of an insulating base and a lid. In the case of a mold type, the semiconductor element is assembled with an ASTM F-15 (Fe- A base made of a metal material such as Ni-Co alloy) or 42 alloy (Fe-Ni alloy) and a plurality of external lead terminals;
And a coating material made of epoxy resin or the like,
A semiconductor element is fixed on the base via a brazing material such as a gold-silicon eutectic alloy, and each electrode of the semiconductor element is electrically connected to an external lead terminal via a bonding wire. It is manufactured by coating a part of the base and the external lead terminals with a coating material.

[0003]

However, in this conventional semiconductor device, the insulating substrate in the case of the pre-mold type and the coating material in the case of the mold type are each made of an epoxy resin. Since the resin material is inferior in moisture resistance and easily penetrates moisture, moisture contained in the air easily penetrates into the inside through the insulating base or the covering material, and as a result, the resin material comes into contact with electrodes, bonding wires, and the like due to moisture contact. Oxidative corrosion occurs, and the electrodes of the semiconductor element and the bonding wires are disconnected, so that the function as a semiconductor device is lost.

[0004] Therefore, in order to solve the above-mentioned drawbacks, it is conceivable to embed a filler composed of particles such as silica or alumina in order to prevent infiltration of moisture into the insulating substrate or the coating material.

However, when a filler made of silica, alumina, or the like is embedded in the insulating substrate or the covering material, the amount of embedding is up to about 95% by weight in consideration of the moldability of the insulating substrate or the covering material. Since about 5% by weight still contains a resin material such as an epoxy resin, infiltration of moisture into the insulating base and the coating material is not completely blocked,
As a result, there is a disadvantage that oxidative corrosion still occurs on the electrodes and the like of the semiconductor element.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to prevent disconnection of an electrode or a bonding wire of a semiconductor element due to oxidative corrosion and to maintain a semiconductor element for a long period of time. Another object of the present invention is to provide a semiconductor device which can be operated stably and at the same time has good moldability of an insulating substrate and a covering material.

[0007]

A semiconductor device according to the present invention is a semiconductor device in which a semiconductor element is hermetically accommodated in a container formed of a resin insulating base and a lid, wherein the semiconductor element is contained in the resin insulating base. The filler is embedded in an amount of 60 to 95% by weight, and the volume of the filler is 0.5 to 30% by weight.
It is characterized in that pores of 1 to 2.0 ml / g are formed.

Further, the semiconductor device of the present invention comprises a base, a semiconductor element fixed on the base, an external lead terminal to which an electrode of the semiconductor element is connected, and one of the semiconductor element, the base and the external lead terminal. A resin coating material for covering a portion, wherein the filler is embedded in the resin coating material in an amount of 60 to 95% by weight, and the volume is 0.1% with respect to 5 to 30% by weight of the filler. To 2.0
It is characterized by forming pores of ml / g.

[0009]

According to the semiconductor device of the present invention, the filler made of silica or the like is added to the resin insulating base of the container for housing the semiconductor element or the resin coating material for coating the semiconductor element.
To 95% by weight, the penetration of moisture into the insulating substrate and the coating material is largely prevented, and the volume of 0.1 to 2.0 ml / g for 5 to 30% by weight of the filler. Due to the formation of the pores, a small amount of water that has penetrated into the insulating substrate or the coating material is completely adsorbed in the pores, and does not penetrate into the semiconductor element or the bonding wire. In addition, there is no occurrence of disconnection due to oxidation corrosion in the electrodes and bonding wires of the semiconductor element, and the semiconductor element can be operated normally and stably for a long period of time.

Further, according to the semiconductor device of the present invention, since the amount of the filler embedded in the insulating substrate and the covering material is 95% by weight or less, the moldability of the insulating substrate and the covering material is also extremely excellent.

[0011]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

FIG. 1 shows an embodiment in which a pre-mold type is taken as an example of a semiconductor device according to the present invention, wherein 1 is an insulating base, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating substrate 1 has a concave portion 1a for accommodating the semiconductor element 3 at the center of the upper surface thereof, and the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a via a resin adhesive.

The insulating substrate 1 is made of a resin such as an epoxy resin. For example, a tablet-like powdered epoxy resin is set and injected into a predetermined mold, and is thermally cured at a temperature of 150 to 200 ° C. Produced by

The insulating base 1 has a filler made of silica or the like embedded therein, and the filler has an effect of effectively preventing moisture contained in the air from entering the insulating base 1. Do

If the amount of the filler to be embedded in the insulating substrate 1 is less than 60% by weight, it is not possible to effectively prevent moisture from penetrating into the insulating substrate 1; The moldability when forming the insulating substrate 1 by using the insulating substrate 1 is deteriorated, and the insulating substrate 1 having a predetermined shape cannot be obtained. Therefore,
The amount of the filler embedded in the insulating base 1 is specified in the range of 60 to 95% by weight.

When the insulating substrate 1 is formed by thermosetting the epoxy resin injected into a predetermined mold, the filler is mixed with a powder made of silica or the like in advance to the epoxy resin injected into the mold. By doing so, it is embedded in the insulating base 1.

The filler has a diameter of 1 to 10 μm.
When the shape is formed into a spherical shape, the embedding into the insulating substrate 1 becomes uniform and dense over the entire insulating substrate 1, whereby it is possible to effectively prevent the penetration of moisture into the entire insulating substrate 1. . Therefore, it is preferable that the filler to be embedded in the insulating substrate 1 is formed in a spherical shape having a diameter of 1 to 10 μm.

Further, the volume of the filler embedded in the insulating substrate 1 is 0.1 to 2% with respect to 5 to 30% by weight of the filler.
The pores of 0 ml / g are formed, and the pores completely adsorb a small amount of water penetrating into the insulating base 1, and the water penetrates into the semiconductor element 3 and a bonding wire 6 described later, and the semiconductor element 3 Prevent moisture from coming into contact with etc.

The pores of the filler are first mixed with starting materials such as alkali metal silicate, alkali metal aluminate, silica sol and the like, and heated to about 80 to 120 ° C.
A hydrothermal reaction is caused at the temperature to precipitate crystals of zeolite (composed of aluminum and silicon), and then an aqueous slurry containing the zeolite and the alkali metal silicate is prepared, and an acid is added to the slurry. Forming coated particles in which a porous coating layer made of amorphous silica is applied to a core made of zeolite, and thereafter, an acid is further applied to the coated particles, and an alkali metal component in the zeolite of the coated particles is formed. And a part of the aluminum component is eluted.

If the amount of the filler having the pores is less than 5% by weight of the filler embedded in the insulating substrate 1, it is possible to completely prevent the moisture penetrating the insulating substrate 1 from reaching the semiconductor element 3 and the like. If it exceeds 30% by weight, the moldability of forming the insulating substrate 1 using a mold deteriorates, and the insulating substrate 1 having a predetermined shape cannot be obtained. Therefore, the filler having pores is specified in the range of 5 to 30% by weight based on the filler embedded in the insulating substrate 1.

If the volume of the pores formed in the filler is less than 0.1 ml / g, it is not possible to completely adsorb moisture penetrating into the insulating substrate 1, and if it exceeds 2.0 ml / g. The moldability when forming the insulating base 1 using a mold is deteriorated, and the insulating base 1 having a predetermined shape cannot be obtained. Therefore, the pores formed in the filler have a volume specified in the range of 0.1 to 2.0 ml / g.

Further, if the pores formed in the filler have a pore diameter in the range of 3 to 200 angstroms, a small amount of water that has penetrated into the insulating substrate 1 is completely adsorbed and held by the pores. It is possible to more reliably prevent intrusion into the semiconductor element 3 and the like. Therefore, it is preferable that the pores formed in the filler have a pore diameter in a range of 3 to 200 angstroms.

The insulating substrate 1 in which the filler is embedded has a plurality of external lead terminals 5 attached from the inside to the outside of the recess 1a, and each of the external lead terminals 5 is exposed inside the recess 1a. Each electrode of the semiconductor element 3 is electrically connected to the site via a bonding wire 6,
An external electric circuit is connected to a portion exposed to the outside.

The external lead terminal 5 is ASTM F-1.
5 (Fe-Ni-Co alloy) and 42 alloy (Fe-Ni
Alloy) or the like, and is formed into a predetermined plate shape by adopting a conventionally known metal working method such as a rolling method or a punching method on an ingot (lump) such as ASTM F-15.

The external lead terminals 5 are previously set at predetermined positions in the predetermined mold when the insulating base 1 is manufactured by setting and injecting a tablet-like powdered epoxy resin into a predetermined mold. Insulating substrate 1
Are integrally attached from the inside to the outside of the concave portion 1a.

The external lead terminal 5 is preferably formed by coating a metal having excellent corrosion resistance such as nickel and gold and having good wettability with a brazing material to a thickness of 0.1 to 20 μm on the exposed surface. Oxidation corrosion of the external lead terminal 5 can be effectively prevented, and the connection between the external lead terminal 5 and the bonding wire 6 and the connection between the external lead terminal 5 and the external electric circuit can be made strong. Therefore, the external lead terminal 5 is coated with nickel, gold, or the like on the exposed surface of the external lead terminal 5.
It is preferable to coat the layer to a thickness of 1 to 20 μm.

The insulating substrate 1 to which the external lead terminals 5 are attached is further provided with a lid 2 made of a plate material such as glass, ceramic, metal, or resin via a resin sealing material. The body 2 closes the concave portion 1a of the insulating base 1, and the insulating base 1
The inside of the container 4 composed of the container 2 and the lid 2 is hermetically sealed, and the semiconductor element 3 is hermetically accommodated inside the container 4 to obtain a semiconductor device as a final product.

FIG. 2 shows another embodiment of the semiconductor device according to the present invention, in which a base 11 made of a metal material such as ASTM F-15 (Fe-Ni-Co alloy) or 42 alloy (Fe-Ni alloy) is used. A plurality of external lead terminals 13 are prepared, and the semiconductor element 12 is fixed on the base 11 via a brazing material such as a gold-silicon eutectic alloy.
Bonding wires 1 to the external lead terminals 13
4 and then a part of the semiconductor element 12, the base 11, and the external lead terminals 13 is covered with a covering material 15 made of a resin material such as an epoxy resin. . In this case, similarly to the above-described embodiment, 60 to 95% by weight of a filler made of silica or the like is embedded in the coating material 15, and the volume of 0.1 to 2.% is added to 5 to 30% by weight of the filler. If pores having a concentration of 0 ml / g are formed, moisture contained in the air penetrates into the coating material 15 and the moisture does not come into contact with the semiconductor element 12 or the like. For example, the semiconductor element 12 can be operated normally and stably for a long time without causing oxidative corrosion.

Since the amount of the filler to be embedded in the coating material 15 is 95% by weight or less, the base 11 to which the semiconductor element 12 is fixed and the external lead terminals 13 are set in a predetermined jig, and A liquid resin such as epoxy is appropriately injected into the inside, and then the injected resin is thermally cured by applying a temperature of about 180 ° C. and a pressure of about 100 kgf / mm ² , thereby forming the base 11, the semiconductor element 12, and the external leads. When a part of the terminal 13 is covered with the covering material 15, the formability of the covering material 15 is extremely excellent, and it is possible to mold the terminal 13 into a predetermined shape.

[0031]

According to the semiconductor device of the present invention, 60 to 95% by weight of a filler made of silica or the like is embedded in a resin insulating base of a container for housing a semiconductor element or a resin coating material for coating the semiconductor element. Therefore, infiltration of moisture into the insulating substrate and the coating material is largely prevented, and 5 to 30
The volume is 0.1 to 2.0 ml / g with respect to the filler by weight.
Since a small amount of water has penetrated into the insulating substrate or the coating material since the pores were formed, the water did not penetrate into the semiconductor element or the bonding wire without reaching the semiconductor element or the bonding wire. As a result, there is no disconnection of the electrodes and bonding wires of the semiconductor element due to oxidative corrosion, and the semiconductor element can be operated normally and stably for a long period of time.

Further, according to the semiconductor device of the present invention, since the amount of the filler embedded in the insulating substrate and the covering material is 95% by weight or less, the moldability of the insulating substrate and the covering material is extremely excellent.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a semiconductor device of the present invention.

FIG. 2 is a sectional view showing another embodiment of the semiconductor device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... External lead terminal

Claims (4)

(57) [Claims] 1. A semiconductor device in which a semiconductor element is hermetically housed in a container comprising a resin insulating base and a lid, wherein a filler is embedded in the resin insulating base in an amount of 60 to 95% by weight. A semiconductor device characterized by forming pores having a volume of 0.1 to 2.0 ml / g with respect to 5 to 30% by weight of a filler. 2. A base, a semiconductor element fixed on the base, an external lead terminal to which an electrode of the semiconductor element is connected, and a resin made of resin covering a part of the semiconductor element, the base and the external lead terminal. A semiconductor device comprising a coating material, wherein 60 to 95% by weight of a filler is embedded in the resinous coating material, and a volume of 0.1 to 2.0 ml / g with respect to 5 to 30% by weight of the filler. A semiconductor device comprising: 3. A pre-Symbol semiconductor device according to claim 1 or claim 2 filler diameter is characterized in that a 1 to 10μm spherical. 4. The semiconductor device according to claim 1, wherein the diameter of the pores formed in the filler is 3 to 200 Å.