JP3426726B2 - Package for storing semiconductor elements - Google Patents
Package for storing semiconductor elementsInfo
- Publication number
- JP3426726B2 JP3426726B2 JP21451994A JP21451994A JP3426726B2 JP 3426726 B2 JP3426726 B2 JP 3426726B2 JP 21451994 A JP21451994 A JP 21451994A JP 21451994 A JP21451994 A JP 21451994A JP 3426726 B2 JP3426726 B2 JP 3426726B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- lid
- insulating base
- sealing material
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体素子を内部に収
容するための半導体素子収納用パッケージに関するもの
である。
【０００２】
【従来の技術】従来、半導体素子を収容するための半導
体素子収納用パッケージ、特に廉価な半導体素子収納用
パッケージは一般に、エポキシ樹脂から成り、上面に半
導体素子を収容するための凹部を有する絶縁基体と、前
記絶縁基体の凹部側面から外側にかけて導出する複数個
の外部リード端子と、前記絶縁基体の上面にエポキシ樹
脂から成る封止材を介して取着され、絶縁基体の凹部を
塞ぐ蓋体とから構成されており、絶縁基体の凹部底面に
半導体素子を樹脂製接着材を介して取着するとともに該
半導体素子の各電極を外部リード端子の一端にボンディ
ングワイヤを介して電気的に接続し、しかる後、前記絶
縁基体の上面に蓋体を封止材を介して接合させ、半導体
素子を絶縁基体と蓋体とから成る容器内部に気密に収容
することによって最終製品としての半導体装置となる。
【０００３】
【発明が解決しようとする課題】しかしながら、この従
来の半導体素子収納用パッケージにおいては、絶縁基体
及び封止材がエポキシ樹脂から成り、該エポキシ樹脂は
耐湿性に劣るため絶縁基体と蓋体とから成る容器内部に
半導体素子を気密に収容した後、大気中に含まれる水分
が絶縁基体及び封止材を通して半導体素子が収容されて
いる凹部内に入り込み易く、凹部内に水分が入り込むと
半導体素子の電極やボンディングワイヤ等に酸化腐食が
発生し、電極やボンディングワイヤに断線が発生して半
導体装置としての機能が喪失するという欠点を有してい
た。
【０００４】また内部に収容する半導体素子が固体撮像
素子で、蓋体がガラス等の透明部材から成る場合には、
容器内部に水分が入り込むと蓋体に結露によるくもりが
発生し、固体撮像素子に良好な光電変換を起こさせるこ
とができないという欠点も有していた。
【０００５】
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は絶縁基体と蓋体とから成る容器内部に大
気中に含まれる水分が入り込むのを有効に防止し、容器
内部に収容される半導体素子を長期間にわたり正常、且
つ安定に作動させることができる半導体素子収納用パッ
ケージを提供することにある。
【０００６】
【課題を解決するための手段】本発明は、絶縁基体とガ
ラス、セラミックまたは金属から成る蓋体とを封止材を
介し接合させることによって内部に半導体素子を気密に
収容するようになした半導体素子収納用パッケージであ
って、前記絶縁基体及び封止材を樹脂で形成するととも
に該絶縁基体及び封止材中に、表面に半径が10乃至100
オングストロームの細孔を有する吸湿材をそれぞれ1.0
乃至50重量％埋入させたことを特徴とするものである。
【０００７】
【０００８】
【０００９】
【作用】本発明の半導体素子収納用パッケージによれ
ば、樹脂から成る絶縁基体及び封止材に、表面に半径が
10乃至100 オングストロームの細孔を有する吸湿材を埋
入させたことから絶縁基体及び封止材を通して絶縁基体
と蓋体とから成る容器内部に大気中に含まれる水分が入
り込もうとしてもその入り込みは吸湿材で阻止され、そ
の結果、容器内部に収容した半導体素子の電極及び半導
体素子の各電極と外部リード端子とを電気的に接続する
ボンディングワイヤに酸化腐食が発生することは殆どな
く、半導体素子を長期間にわたり正常、且つ安定に作動
させることが可能となる。
【００１０】また内部に収容する半導体素子が固体撮像
素子で、蓋体がガラス等の透明部材から成る場合、蓋体
に結露によるくもりが発生することはなく、固体撮像素
子に正確な光電変換を起こさせることも可能となる。
【００１１】
【実施例】次に本発明を添付の図面に基づき詳細に説明
する。図１は本発明の半導体素子収納用パッケージの一
実施例を示し、1 は絶縁基体、2 は蓋体である。この絶
縁基体1 と蓋体2 とで半導体素子3 を収容するための絶
縁容器4 が構成される。
【００１２】前記絶縁基体1 はその上面中央部に半導体
素子3 を収容するための凹部1aを有し、該凹部1a底面に
は半導体素子3 が樹脂製接着剤を介して接着固定され
る。
【００１３】前記絶縁基体1 は、例えばエポキシ樹脂等
の樹脂から成り、所定型内にタブレット状に成形された
粉末のエポキシ樹脂をセットして注入するとともにこれ
を１５０〜２００℃の温度で熱硬化させることによって
製作される。
【００１４】また前記絶縁基体1 はその内部に、表面に
半径が10乃至100 オングストロームの細孔を有する吸湿
材が埋入されており、該吸湿材はエポキシ樹脂から成る
絶縁基体1 中を水分が通過するのを有効に阻止する作用
を為す。
【００１５】前記絶縁基体1 はその内部に吸湿材が埋入
されていることから絶縁基体1 と蓋体2 とから成る容器
4 内部に半導体素子3 を収容した後、大気中に含まれる
水分が絶縁基体1 を通して容器4 内部に入り込もうとし
てもその入り込みは吸湿材で有効に阻止され、その結
果、容器4 内部に水分が入り込むことは殆どなく、容器
4 内部に収容する半導体素子3 の電極等に酸化腐食が発
生するのを皆無として半導体素子3 を長期間にわたり正
常、且つ安定に作動させることが可能となる。
【００１６】尚、前記吸湿材は例えば、球状のシリカ粒
子から成り、タブレット状に成形された粉末のエポキシ
樹脂を所定型内にセットして注入し、絶縁基体1 を製作
する際にエポキシ樹脂に球状のシリカ粒子を予め添加混
合しておくことによって絶縁基体1 内に埋入される。
【００１７】また前記吸湿材はその表面の細孔半径が10
オングストローム未満であると絶縁基体1 に侵入した水
分を完全に吸着させることができず、また100 オングス
トロームを越えると吸湿材の比重が軽くなり、エポキシ
樹脂から成る絶縁基体1 の全体に吸湿材を分散埋入させ
ることが困難となる。従って、前記吸湿材はその表面の
細孔半径が10乃至100 オングストロームのものに限定さ
れる。
【００１８】更に前記吸湿材は絶縁基体1に対し1.0重量
％未満の埋入であれば絶縁基体1における水分の通過が
有効に阻止されず、また50重量％を超えると吸湿材を混
合させたタブレット状に成形された粉末のエポキシ樹脂
を所定型内にセットして注入し、絶縁基体1を製作する
際、エポキシ樹脂の流れ性が悪くなって所望形状の絶縁
基体1が得られなくなる傾向にある。従って、前記吸湿
材は絶縁基体1に対し1.0乃至50重量％の範囲で埋入させ
ておくこととする。
【００１９】前記絶縁基体1 はまたその凹部1a内側から
外側にかけて複数個の外部リード端子5 が取着されてお
り、該外部リード端子5 の凹部1a内側に露出する各々の
部位には半導体素子3 の各電極がボンディングワイヤ6
を介して電気的に接続され、また外側に露出する部位に
は外部電気回路が接続される。
【００２０】前記外部リード端子5は鉄−ニッケル−コ
バルト合金や鉄−ニッケル合金等の金属材料から成り、
例えば鉄−ニッケル−コバルト合金等のインゴット(塊)
を圧延加工法や打ち抜き加工法等、従来周知の金属加工
法を採用することによって所定の板状に形成される。
【００２１】尚、前記外部リード端子5 はタブレット状
に成形された粉末のエポキシ樹脂を所定型内にセットし
注入することによって絶縁基体１を製作する際、所定型
内の所定位置に予めセットしておくことによって絶縁基
体1 の凹部1a内側から外側にかけて一体的に取着され
る。
【００２２】また前記外部リード端子5 はその露出する
表面にニッケル、金等の耐蝕性に優れ、且つロウ材と濡
れ性のよい金属を0.1 乃至20.0μm の厚みに層着させて
おくと外部リード端子5 の酸化腐食を有効に防止するこ
とができるとともに外部リード端子5 とボンディングワ
イヤ6 の接続及び外部リード端子5 と外部電気回路との
接続を強固となすことができる。従って、前記外部リー
ド端子5 はその露出する表面にニッケル、金等を0.1 乃
至20.0μm の厚みに層着させておくことが好ましい。
【００２３】前記外部リード端子5 が取着された絶縁基
体1 は更にその上面に蓋体2 が封止材7 を介して取着さ
れ、蓋体2 で絶縁基体1 の凹部1aを塞ぎ、絶縁基体1 と
蓋体2 とから成る容器4 の内部を気密に封止することに
よって容器4 内部に半導体素子3 が気密に収容される。
【００２４】前記蓋体2はガラス、セラミックまたは金
属の板材から成り、封止材7によって絶縁基体1上に接合
取着される。
【００２５】また前記蓋体2 を絶縁基体1 に接合取着さ
せる封止材7 はエポキシ樹脂等から成り、液状のエポキ
シ樹脂を絶縁基体1 の上面、或いは蓋体2 の下面に予め
従来周知のスクリーン印刷法等により印刷塗布し、所定
厚みに被着させておくことによって絶縁基体1 と蓋体2
との間に配される。
【００２６】前記封止材7 はまたその内部に、表面に半
径が10乃至100 オングストロームの細孔を有する吸湿材
が埋入されており、該吸湿材は封止材7 中を水分が通過
するのを有効に阻止する作用を為す。
【００２７】前記封止材7 はその内部に吸湿材が埋入さ
れていることから絶縁基体1 と蓋体2 とから成る容器4
内部に半導体素子3 を収容した後、大気中に含まれる水
分が封止材7 を通して容器4 内部に入り込もうとしても
その入り込みは吸湿材で有効に阻止され、その結果、容
器4 内部に水分が入り込むことは殆どなく、容器4 内部
に収容する半導体素子3 の電極等に酸化腐食が発生する
のを皆無として半導体素子3 を長期間にわたり正常、且
つ安定に作動させることが可能となる。
【００２８】尚、前記吸湿材としては例えば、球状のシ
リカ粒子から成り、液状のエポキシ樹脂を絶縁基体1 の
上面、或いは蓋体2 の下面にスクリーン印刷法等により
印刷塗布することによって絶縁基体1 の上面や蓋体2 の
下面に封止材7 を被着させる際、液状のエポキシ樹脂内
に予めシリカ粒子を添加混合させておくことによって封
止材7 中に埋入される。
【００２９】また前記吸湿材はその表面の細孔半径が10
オングストローム未満であると封止材7 に侵入した水分
を完全に吸着させることができず、また100 オングスト
ロームを越えると液状のエポキシ樹脂を絶縁基体1 の上
面や蓋体2 の下面にスクリーン印刷法等により印刷塗布
することによって封止材7 を被着させる際、液状エポキ
シ樹脂の印刷性が悪くなって絶縁基体1 上面や蓋体2 の
下面に封止材7 を均一厚みに被着させることが困難とな
る。従って、前記吸湿材はその表面の細孔半径が10乃至
100 オングストロームのものに限定される。
【００３０】更に前記吸湿材は封止材7に対し1.0重量％
未満の埋入であれば封止材7における水分の通過が有効
に阻止されず、また50重量％を超えると吸湿材を混合さ
せた液状のエポキシ樹脂を絶縁基体1の上面や蓋体2の下
面にスクリーン印刷法等により印刷塗布することによっ
て封止材7を被着させる際、液状エポキシ樹脂の印刷性
が悪くなって絶縁基体1上面や蓋体2の下面に封止材7を
均一厚みに被着させることが困難となる傾向にある。従
って、前記吸湿材は封止材7に対し1.0ないし50重量％の
範囲で埋入させておくこととする。
【００３１】かくして本発明の半導体素子収納用パッケ
ージによれば、絶縁基体1 の凹部1a底面に半導体素子3
を接着剤を介して接着固定するとともに半導体素子3 の
各電極を外部リード端子5 にボンディングワイヤ6 を介
して電気的に接続し、しかる後、絶縁基体1 の上面に蓋
体2 を封止材7 を 介して接合させ、絶縁基体1 と蓋体
2 とから成る容器4 内部に半導体素子3 を気密に収容す
ることによって製品としての半導体装置となる。
【００３２】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり，例えば半導体素子が固体撮像素
子であり、蓋体がガラス等の透明部材から成る半導体素
子収納用パッケージにも適用し得る。この場合、絶縁容
器内部へ水分が入り込むことは殆どないことから蓋体に
結露によるくもりが発生することはなく、固体撮像素子
に正確な光電変換を起こさせることが可能となる。
【００３３】
【発明の効果】本発明の半導体素子収納用パッケージに
よれば、樹脂から成る絶縁基体及び封止材に、表面に半
径が１０乃至１００オングストロームの細孔を有する吸
湿材を埋入させたことから絶縁基体及び封止材を通して
絶縁基体とガラス、セラミックまたは金属から成る蓋体
とから成る容器内部に大気中に含まれる水分が入り込も
うとしてもその入り込みは吸湿材で阻止され、その結
果、容器内部に収容した半導体素子の電極及び半導体素
子の各電極と外部リード端子とを電気的に接続するボン
ディングワイヤに酸化腐食が発生することは殆どなく、
半導体素子を長期間にわたり正常、且つ安定に作動させ
ることが可能となる。
【００３４】また内部に収容する半導体素子が固体撮像
素子で、蓋体がガラス等の透明部材から成る場合、蓋体
に結露によるくもりが発生することはなく、固体撮像素
子に正確な光電変換を起こさせることも可能となる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device therein. 2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element, particularly an inexpensive package for accommodating a semiconductor element, is generally made of epoxy resin, and has a concave portion for accommodating the semiconductor element on its upper surface. An insulating base having a plurality of external lead terminals extending from the side surface of the concave portion of the insulating base to the outside, and attached to a top surface of the insulating substrate via a sealing material made of epoxy resin to cover the concave portion of the insulating base. A semiconductor element is attached to the bottom surface of the concave portion of the insulating base via a resin adhesive, and each electrode of the semiconductor element is electrically connected to one end of an external lead terminal via a bonding wire. Connection, and thereafter, a lid is bonded to the upper surface of the insulating base via a sealing material, and the semiconductor element is hermetically accommodated inside a container formed of the insulating base and the lid. Thereby, a semiconductor device as a final product is obtained. [0003] However, in this conventional package for housing a semiconductor element, the insulating base and the sealing material are made of epoxy resin, and the epoxy resin is inferior in moisture resistance. After the semiconductor element is hermetically accommodated inside the container made of the body, moisture contained in the air is likely to enter the recess in which the semiconductor element is accommodated through the insulating base and the sealing material. Oxidation corrosion occurs in the electrodes and bonding wires of the semiconductor element, and the electrodes and the bonding wires are disconnected, and the function as a semiconductor device is lost. In the case where the semiconductor element housed inside is a solid-state image sensor and the lid is made of a transparent member such as glass,
If moisture enters the inside of the container, clouding due to dew condensation occurs on the lid, and there is also a disadvantage that good photoelectric conversion cannot be caused in the solid-state imaging device. SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to effectively prevent moisture contained in the atmosphere from entering the inside of a container comprising an insulating base and a lid. It is another object of the present invention to provide a semiconductor device housing package that allows a semiconductor device housed in a container to operate normally and stably for a long period of time. According to the present invention, a semiconductor element is hermetically housed by bonding an insulating substrate and a lid made of glass, ceramic or metal via a sealing material. A package for accommodating a semiconductor element, wherein the insulating base and the sealing material are formed of a resin, and the surface of the insulating base and the sealing material has a radius of 10 to 100.
1.0 gram of hygroscopic material with Angstrom pores
About 50% by weight. According to the package for housing a semiconductor element of the present invention, the insulating base and the sealing material made of resin have a radius on the surface.
Since moisture absorbing material having pores of 10 to 100 angstroms is embedded, even if moisture contained in the atmosphere tries to enter the inside of the container consisting of the insulating base and the lid through the insulating base and the sealing material, the penetration does not occur. Oxidation corrosion is hardly generated on the electrodes of the semiconductor element housed in the container and the bonding wires for electrically connecting the electrodes of the semiconductor element and the external lead terminals. Can operate normally and stably over a long period of time. When the semiconductor element housed inside is a solid-state image sensor, and the lid is made of a transparent member such as glass, the lid does not generate cloudiness due to dew condensation, so that accurate photoelectric conversion can be performed on the solid-state image sensor. It is also possible to wake up. The present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for housing a semiconductor element according to the present invention, wherein 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 constitute an insulating container 4 for housing the semiconductor element 3. The insulating substrate 1 has a concave portion 1a for accommodating the semiconductor element 3 at the center of the upper surface thereof, and the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a via a resin adhesive. The insulating substrate 1 is made of a resin such as an epoxy resin, for example. A tablet-like powdered epoxy resin is set and injected into a predetermined mold, and is thermoset at a temperature of 150 to 200 ° C. It is produced by letting it do. The insulating substrate 1 has embedded therein a hygroscopic material having pores with a radius of 10 to 100 angstroms on its surface, and the hygroscopic material causes moisture in the insulating substrate 1 made of epoxy resin. It acts to effectively prevent passage. Since the insulating base 1 has a hygroscopic material embedded therein, a container comprising the insulating base 1 and the lid 2 is provided.
4 After housing the semiconductor element 3 inside, even if the moisture contained in the air tries to enter the inside of the container 4 through the insulating base 1, the entry is effectively prevented by the hygroscopic material, and as a result, the moisture inside the container 4 Rarely penetrates, container
4 It is possible to operate the semiconductor element 3 normally and stably for a long period of time without causing any oxidative corrosion on the electrodes and the like of the semiconductor element 3 housed therein. The hygroscopic material is made of, for example, spherical silica particles, and a tablet-like powdered epoxy resin is set and injected into a predetermined mold, and is injected into the epoxy resin when the insulating substrate 1 is manufactured. By adding and mixing spherical silica particles in advance, they are embedded in the insulating substrate 1. The moisture absorbent has a pore radius of 10 on its surface.
If the thickness is less than Å, moisture that has invaded the insulating substrate 1 cannot be completely absorbed.If the thickness exceeds 100 Å, the specific gravity of the moisture absorbing material becomes light, and the moisture absorbing material is dispersed throughout the insulating substrate 1 made of epoxy resin. It is difficult to implant. Therefore, the moisture absorbing material is limited to those having a surface with a pore radius of 10 to 100 Å. Further, if the moisture absorbing material is embedded in the insulating substrate 1 in an amount of less than 1.0% by weight, the passage of moisture through the insulating substrate 1 is not effectively prevented, and if it exceeds 50% by weight, the moisture absorbing material is mixed. When the powdered epoxy resin formed into a tablet shape is set and injected into a predetermined mold and the insulating substrate 1 is manufactured, there is a tendency that the flowability of the epoxy resin deteriorates and the insulating substrate 1 having a desired shape cannot be obtained. is there. Therefore, the hygroscopic material is embedded in the insulating substrate 1 in a range of 1.0 to 50% by weight. A plurality of external lead terminals 5 are attached to the insulating base 1 from the inside to the outside of the recess 1a, and each of the external lead terminals 5 exposed to the inside of the recess 1a has a semiconductor element 3 attached thereto. Each electrode is a bonding wire 6
And an external electric circuit is connected to a portion exposed to the outside. The external lead terminal 5 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, an ingot of iron-nickel-cobalt alloy
Is formed into a predetermined plate shape by employing a conventionally known metal working method such as a rolling method or a punching method. When the insulating lead 1 is manufactured by setting and injecting a tablet-like powdered epoxy resin into a predetermined mold, the external lead terminals 5 are previously set at predetermined positions in the predetermined mold. By doing so, the concave portion 1a of the insulating base 1 is integrally attached from the inside to the outside. The external lead terminal 5 may be provided with a metal having excellent corrosion resistance, such as nickel or gold, and a good wettability with a brazing material to a thickness of 0.1 to 20.0 μm on the exposed surface. Oxidation and corrosion of the terminal 5 can be effectively prevented, and the connection between the external lead terminal 5 and the bonding wire 6 and the connection between the external lead terminal 5 and the external electric circuit can be made strong. Therefore, it is preferable that nickel, gold or the like be layered on the exposed surface of the external lead terminal 5 to a thickness of 0.1 to 20.0 μm. The insulating substrate 1 to which the external lead terminals 5 are attached is further provided with a lid 2 attached to the upper surface thereof via a sealing material 7, and the lid 2 closes the concave portion 1 a of the insulating substrate 1. The inside of the container 4 composed of the base 1 and the lid 2 is hermetically sealed, so that the semiconductor element 3 is hermetically accommodated inside the container 4. The lid 2 is made of a glass, ceramic or metal plate, and is joined and attached to the insulating base 1 by a sealing material 7. The sealing material 7 for joining and attaching the lid 2 to the insulating base 1 is made of epoxy resin or the like, and a liquid epoxy resin is previously applied to the upper surface of the insulating base 1 or the lower surface of the lid 2 by a well-known method. The insulating base 1 and the lid 2 are printed and applied by screen printing, etc., and adhered to a predetermined thickness.
It is arranged between and. The sealing material 7 also has a hygroscopic material having pores having a radius of 10 to 100 angstroms embedded in its surface, and the moisture absorbing material passes through the sealing material 7. Works effectively to prevent The sealing material 7 has a container 4 comprising an insulating base 1 and a lid 2 because a hygroscopic material is embedded therein.
After the semiconductor element 3 is accommodated therein, even if the moisture contained in the air tries to enter the inside of the container 4 through the sealing material 7, the entry is effectively prevented by the moisture absorbing material. The semiconductor element 3 hardly penetrates, and it is possible to operate the semiconductor element 3 normally and stably for a long period of time without causing any oxidative corrosion on the electrodes and the like of the semiconductor element 3 housed in the container 4. The hygroscopic material is made of, for example, spherical silica particles, and a liquid epoxy resin is printed on the upper surface of the insulating substrate 1 or the lower surface of the lid 2 by screen printing or the like. When the sealing material 7 is applied to the upper surface of the lid or the lower surface of the lid 2, silica particles are added and mixed in a liquid epoxy resin in advance and embedded in the sealing material 7. The moisture absorbent has a pore radius of 10 on its surface.
If the thickness is less than Å, it is not possible to completely adsorb the moisture that has penetrated the sealing material 7 .If the thickness exceeds 100 Å, liquid epoxy resin is screen-printed on the upper surface of the insulating base 1 and the lower surface of the lid 2. When the encapsulant 7 is applied by printing and coating, the printability of the liquid epoxy resin deteriorates and the encapsulant 7 can be applied to the upper surface of the insulating base 1 and the lower surface of the lid 2 in a uniform thickness. It will be difficult. Therefore, the moisture absorbing material has a pore radius of 10 to
Limited to 100 angstroms. Further, the moisture absorbing material is 1.0% by weight with respect to the sealing material 7.
If it is less than 50% by weight, the passage of moisture through the sealing material 7 is not effectively prevented. If it exceeds 50% by weight, the liquid epoxy resin mixed with a hygroscopic material When the encapsulant 7 is adhered by printing and applying the lower surface by a screen printing method or the like, the printability of the liquid epoxy resin deteriorates, and the encapsulant 7 is uniformly applied on the upper surface of the insulating base 1 or the lower surface of the lid 2. Tends to be difficult to adhere. Therefore, the moisture absorbing material is embedded in the sealing material 7 in a range of 1.0 to 50% by weight. Thus, according to the package for housing a semiconductor element of the present invention, the semiconductor element 3
And the electrodes of the semiconductor element 3 are electrically connected to the external lead terminals 5 via bonding wires 6. Thereafter, the lid 2 is placed on the upper surface of the insulating base 1 with a sealing material. 7 and the insulating base 1 and the lid
A semiconductor device as a product is obtained by hermetically housing the semiconductor element 3 inside the container 4 composed of It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. The present invention can also be applied to a semiconductor element housing package whose body is made of a transparent member such as glass. In this case, since moisture hardly enters the inside of the insulating container, clouding due to dew condensation does not occur in the lid, and accurate photoelectric conversion can be caused in the solid-state imaging device. According to the package for housing a semiconductor element of the present invention, a hygroscopic material having pores with a radius of 10 to 100 angstroms on its surface is embedded in the insulating base and the sealing material made of resin. Therefore, even if water contained in the atmosphere tries to enter the inside of the container composed of the insulating base and the lid made of glass, ceramic or metal through the insulating base and the sealing material, the entry is prevented by the hygroscopic material. Oxidation corrosion hardly occurs on the electrodes of the semiconductor element housed in the container and on the bonding wires for electrically connecting the electrodes of the semiconductor element and the external lead terminals,
The semiconductor element can be operated normally and stably for a long period of time. When the semiconductor element housed inside is a solid-state image sensor and the lid is made of a transparent material such as glass, the lid does not generate cloudiness due to dew condensation, so that accurate photoelectric conversion can be performed on the solid-state image sensor. It is also possible to wake up.
【図面の簡単な説明】
【図１】本発明の半導体素子収納用パッケージの一実施
例を示す断面図である。
【符号の説明】
１・・・・・絶縁基体
２・・・・・蓋体
３・・・・・半導体素子
４・・・・・絶縁容器
５・・・・・外部リード端子
７・・・・・封止材BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention. [Description of Signs] 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Insulating container 5 ... External lead terminal 7 ... ..Sealing materials
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平１−294476（ＪＰ，Ａ) 特開 昭53−75860（ＪＰ，Ａ) 特開 昭48−71183（ＪＰ，Ａ) 特開 昭63−120464（ＪＰ，Ａ) 特開 昭60−176256（ＪＰ，Ａ) 特開 平７−153864（ＪＰ，Ａ) 特開 平４−85859（ＪＰ，Ａ) 特開 平３−60056（ＪＰ，Ａ) 特開 昭62−221137（ＪＰ，Ａ) 実開 昭63−82945（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/00 - 23/10 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-294476 (JP, A) JP-A-53-75860 (JP, A) JP-A-48-71183 (JP, A) JP-A-63-76 120464 (JP, A) JP-A-60-176256 (JP, A) JP-A-7-153864 (JP, A) JP-A-4-85859 (JP, A) JP-A-3-60056 (JP, A) JP-A-62-221137 (JP, A) JP-A-63-82945 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 23/00-23/10
Claims (1)
属から成る蓋体とを封止材を介し接合させることによっ
て内部に半導体素子を気密に収容するようになした半導
体素子収納用パッケージであって、前記絶縁基体及び封
止材を樹脂で形成するとともに該絶縁基体及び封止材中
に、表面に半径が10乃至100オングストロームの細孔を
有する吸湿材をそれぞれ1.0乃至50重量％埋入させたこ
とを特徴とする半導体素子収納用パッケージ。(57) [Claims] [Claim 1] Insulating substrate and glass, ceramic or gold
A semiconductor element housing package in which a semiconductor element is hermetically housed by bonding a lid made of a metal to the inside thereof via a sealing material, wherein the insulating base and the sealing material are formed of resin. A semiconductor element storage package, wherein 1.0 to 50% by weight of a hygroscopic material having pores having a radius of 10 to 100 Å on its surface is embedded in the insulating base and the sealing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21451994A JP3426726B2 (en) | 1994-09-08 | 1994-09-08 | Package for storing semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21451994A JP3426726B2 (en) | 1994-09-08 | 1994-09-08 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0878558A JPH0878558A (en) | 1996-03-22 |
| JP3426726B2 true JP3426726B2 (en) | 2003-07-14 |
Family
ID=16657071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21451994A Expired - Lifetime JP3426726B2 (en) | 1994-09-08 | 1994-09-08 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3426726B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4114037B2 (en) * | 2001-09-25 | 2008-07-09 | 信越化学工業株式会社 | Silicone rubber sealing / sealing material for preventing or delaying sulfidation of electric / electronic parts and sulfidation preventing or delaying method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226672B2 (en) * | 1971-12-24 | 1977-07-15 | ||
| JPS5375860A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Electronic parts having glass sealed package |
| JPS60176256A (en) * | 1984-02-23 | 1985-09-10 | Nec Corp | Semiconductor device |
| JPS62221137A (en) * | 1986-03-24 | 1987-09-29 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS63120464A (en) * | 1986-11-10 | 1988-05-24 | Toshiba Corp | Solid-state image pickup device |
| JPS6382945U (en) * | 1986-11-17 | 1988-05-31 | ||
| JPH01294476A (en) * | 1988-05-07 | 1989-11-28 | Fujitsu Ltd | Container for receiving resin-sealed electronic component |
| JPH0693481B2 (en) * | 1989-07-28 | 1994-11-16 | 株式会社巴川製紙所 | Adhesive for sealing solid-state imaging devices |
| JP2794912B2 (en) * | 1990-07-26 | 1998-09-10 | 三井化学株式会社 | Hermetically sealed package and joining members |
| JP2746826B2 (en) * | 1993-11-30 | 1998-05-06 | 京セラ株式会社 | Electronic component storage package |
-
1994
- 1994-09-08 JP JP21451994A patent/JP3426726B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0878558A (en) | 1996-03-22 |
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