JP2792638B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element is made of an electrically insulating material such as alumina ceramics as shown in FIG. An insulating substrate 11 having a portion 11a;
An insulating frame body 12 having an opening A at the center so as to surround the semiconductor element mounting portion 11a, and a plurality of external lead terminals 13 for electrically connecting the semiconductor element housed therein to an external electric circuit. And a resin paste made of, for example, epoxy resin,
14a is applied by printing using a screen printing method, and then external lead terminals 13 are placed on the upper surface of the insulating base 11 and heated to a temperature of about 150 ° C. to form a resin paste 14a.
The external lead terminals 13 are fixed to the upper surface of the insulating base 11 by heat curing, and thereafter, a resin paste 14b made of epoxy resin or the like is also printed and applied to the lower surface of the insulating frame 12 and the external lead terminals 13 13 is mounted on the upper surface of the insulating base 11 to which is fixed, and the resin paste 14b applied to the lower surface of the insulating frame 12 is thermally cured at a temperature of about 150 ° C.

In such a conventional package for accommodating a semiconductor element, a semiconductor element 15 is fixed to a semiconductor element mounting portion 11a of an insulating base 11 located in an opening A of an insulating frame 12, and each electrode of the semiconductor element 15 is connected to a bonding wire. 16 and then connected to the external lead terminal 13, and thereafter, a filler such as epoxy resin is filled in the opening A of the insulating frame 12, and the semiconductor element
A semiconductor device as a final product is obtained by hermetically sealing 15.

In the conventional package for accommodating a semiconductor element, one end of the external lead terminal 13 is bent so as to be well connected to an external electric circuit.
By electrically connecting one end of 13 to an external electric circuit, the semiconductor element 15 housed inside is connected to the external electric circuit.

[0005]

However, in this conventional package for housing a semiconductor element, the outer dimensions of the insulating base 11 and the insulating frame 12 are generally the same.
When the resin paste 14b is printed and applied to the lower surface of the substrate and the resin paste 14b is placed on the upper surface of the insulating substrate 11 to which the external lead terminals 13 are fixed, and the insulating substrate 1 and the insulating frame 12 are bonded and fixed,
The resin paste 14b applied to the lower surface of the insulating frame 12 is pressed by the weight of the insulating frame 12 with the insulating base 11 and the insulating frame.
It leaks to the outside of 12 and causes a defective appearance in the semiconductor element storage package.

Further, when the resin flows out of the insulating base 11 and the external lead terminals 13 are bent so that the external lead terminals 13 can be connected well to an external electric circuit, a force for bending the external lead terminals 13 is applied to the outside of the insulating base 11 or the like. The resin that has flowed out of the terminal is pulled and separated from the external lead terminal 13, and a gap is formed between the external lead terminal 13 and the resin. Therefore, in this package for housing semiconductor elements, the external lead terminals 13 are connected to the electrodes and the semiconductor elements of the semiconductor element through a gap formed between the resin fixing the external lead terminals 13 to the insulating base 11 and the insulating frame 12. The moisture and the like contained in the air come into contact with the bonding wire to be formed, causing corrosion of the electrode of the semiconductor element and the bonding wire connected to the semiconductor element, thereby allowing the semiconductor element to operate normally and stably for a long period of time. It also had the disadvantage that it could not be done.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to eliminate corrosion of each electrode of a semiconductor element and a bonding wire connected to the electrode, and to provide a semiconductor element for a long period of time. An object of the present invention is to provide a semiconductor element housing package that can be operated normally and stably.

[0008]

According to the present invention, there is provided an insulating base having a mounting portion on which a semiconductor element is mounted, and an insulating frame surrounding the mounting portion and forming a space for accommodating the semiconductor element therein. A semiconductor element housing package formed by bonding an external lead terminal therebetween with a resin adhesive therebetween, wherein an outer peripheral edge of the insulating frame is located at least 0.5 mm or more inward from an outer peripheral edge of the insulating base. It is characterized by the following.

[0009]

Since the outer peripheral edge of the insulating frame is located at least 0.5 mm or more inside the outer peripheral edge of the insulating base, the insulating frame is bonded and fixed on the insulating base via a resin paste which is printed and applied to the insulating frame. In doing so, the resin paste does not flow out of the insulating base at all, as a result, even if the external lead terminal is bent outside the insulating base, the resin is firmly adhered to the external lead terminal without being pulled, This makes it possible to operate the semiconductor element normally and stably for a long period of time without any contact of the moisture and the like contained in the air with the electrodes of the semiconductor element and the bonding wires connected to the electrodes.

[0010]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment of a package for accommodating a semiconductor element according to the present invention, in which 1 is an insulating base made of an electrically insulating material;
Is an insulating frame also made of an electrically insulating material.

The insulating substrate 1 has a mounting portion 1a for mounting the semiconductor element 3 at a substantially central portion of the upper surface thereof, and the semiconductor element 3 is mounted on the mounting portion 1a via an adhesive made of resin or the like. Adhesively fixed.

The insulating substrate 1 is made of an aluminum nitride sintered body, an aluminum oxide sintered body, a mullite sintered body,
When it is made of an electrically insulating material such as a silicon carbide sintered body or a glass ceramic sintered body, and is made of, for example, aluminum nitride ceramic, a raw material powder such as aluminum nitride powder, yttria powder or the like is pressed into a shape corresponding to the insulating base 1. It is manufactured by filling in a mold and molding by applying a constant pressure, and then firing the molded body at a temperature of about 1800 ° C.

An external lead terminal 4 is adhered and fixed to the upper surface of the insulating base 1 via a resin adhesive 5a, and one end of the external lead terminal 4 is connected to each electrode of the semiconductor element 3 by a bonding wire. 6 electrically connected via
The other end is electrically connected to an external electric circuit.

The external lead terminal 4 is made of an iron alloy such as Kovar metal (iron-nickel-cobalt alloy), 42 alloy (iron-nickel alloy), or a copper alloy made of copper, nickel, silicon, zinc or the like. Ingot (
The lump is formed into a predetermined plate shape by employing a conventionally known metal working method such as a rolling method or a punching method.

The external lead terminal 4 has a surface coated with silver, aluminum, or the like by plating, vapor deposition, or cladding.
It is attached to a thickness of 0.5 to 20.0 μm so that the bonding of the bonding wire 5 to the external lead terminal 4 is strong.

The resin adhesive 5a for bonding and fixing the external lead terminals 4 to the upper surface of the insulating base 1 is made of bisphenol A type epoxy resin, novolak type epoxy resin, cricidyl ester type epoxy resin, cricidylamine type epoxy resin, A chain aliphatic epoxy resin, an alicyclic epoxy resin, an epoxy resin such as a heterocyclic epoxy resin, or a resin such as a polyimide, a phenol resin, a silicone, a urethane, and the like. A resin paste obtained by adding and mixing imidazole as a curing agent to a bisphenol A type epoxy resin is applied by printing using a screen printing method, and then external lead terminals 4 are placed on the upper surface of the insulating base 1 and About 15
The external lead terminals 4 are bonded and fixed to the upper surface of the insulating base 1 by heating to a temperature of 0 ° C. and thermally curing the resin paste.

The insulating base 1 with the external lead terminals 4 bonded and fixed to the upper surface is further provided with an insulating frame 2 bonded and fixed to the upper surface thereof via a resin adhesive 5b.

The insulating frame 2 has an opening B at the center thereof, and has a frame shape surrounding the mounting portion 1a to which the semiconductor element of the insulating base 1 is fixed. The insulating frame 2 forms a space for accommodating the semiconductor element 3 therein by the opening B at the center and the upper surface of the insulating base 1.

The insulating frame 2 is made of an electrically insulating material such as an aluminum nitride sintered body, aluminum oxide sintered body, mullite sintered body, silicon carbide sintered body, glass ceramic sintered body, etc. A method similar to that of the insulating substrate 1 of the above, specifically, a raw material powder such as aluminum nitride powder and yttria powder is filled into a press mold having a shape corresponding to the insulating frame body 2 and molded by applying a constant pressure, Thereafter, the compact is manufactured by firing at a temperature of about 1800 ° C.

The insulating frame 2 has an outer peripheral portion on the lower surface thereof.
For example, a resin paste obtained by adding and mixing imidazole as a curing agent to a bisphenol A type epoxy resin is applied by printing using a screen printing method, and then this is applied on the insulating substrate 1 on which the external lead terminals 4 are fixed on the upper surface. And the resin paste is heated to a temperature of about 150 ° C. and thermally cured to be adhered and fixed to the upper surface of the insulating base 1.

Further, the insulating frame 2 has an outer dimension slightly smaller than the insulating base 1 so that its outer peripheral edge is located inside the outer peripheral edge of the insulating base 1 by a width X.

The outer peripheral edge of the insulating frame 2 is an insulating base 1
When the insulating frame 2 is bonded and fixed on the insulating base 1, the insulating frame
A large amount of the resin paste, which becomes the resin adhesive 5b printed and applied to the lower surface of 2, does not flow out of the insulating base 1 due to the pressing force of the weight of the insulating frame 2, so that the external appearance of the semiconductor device package No failure occurs.

At the same time, since there is no possibility that a large amount of the resin adhesive 5b flows out of the insulating base 1, even if the external lead terminals 4 are bent so that they can be connected well to an external electric circuit, The resin adhesive 5b is not pulled off by the force to bend the external lead terminal 4 and is separated from the external lead terminal. As a result, the adhesion between the external lead terminal 4 and the resin adhesive 5b is strengthened, and the external lead It is possible to effectively prevent a gap from being formed between the terminal 4 and the resin adhesive 5b.

The insulating frame 2 is arranged such that its outer peripheral edge is located inside the outer peripheral edge of the insulating base 1 by a width X, but when the value of the width X becomes X <0.5 mm, the insulating frame 2 becomes insulated. Substrate 1
When the insulating frame 2 is bonded and fixed on the insulating frame 2, a large amount of resin paste serving as the resin adhesive 5b printed on the lower surface of the insulating frame 2 is applied to the outside of the insulating base 1 by the pressing force of the weight of the insulating frame 2. It leaks out and causes corrosion of the poor appearance and the electrodes of the semiconductor element and the bonding wires connected to the electrodes. Therefore, the value of the width X is specified in the range of X ≧ 0.5 mm.

Thus, according to the package for accommodating a semiconductor element of the present invention, the semiconductor element 3 is fixed to the semiconductor element mounting portion 1a of the insulating base 1 via an adhesive, and each electrode of the semiconductor element 3 is connected to the bonding wire 6a. Then, a resin filler 7 is filled in the opening B of the insulating frame 2 and the semiconductor element 3 is hermetically sealed, thereby completing the semiconductor device as a final product.

As the resin filler 7 for hermetically sealing the semiconductor element 3, a resin such as an epoxy resin, a polyimide, a phenol resin, or a silicone is used, and a resin such as an epoxy resin is provided in the opening B of the insulating frame 2. The semiconductor element 3 is hermetically sealed in the opening B of the insulating frame 2 by filling the paste and thermally curing the paste at a temperature of about 150 ° C.

The resin filler 7 contains silicon oxide, aluminum oxide having a particle size of 0.1 to 50.0 μm,
A resin filler is prepared by dispersing 50 to 400 parts by weight of a filler made of an insulating powder such as aluminum nitride, calcium carbonate, and magnesium oxide with respect to 100 parts by weight of the resin.
7 can improve the moisture permeability, and can more firmly protect the semiconductor element housed therein from the external environment. Accordingly, the resin filler 7 contains silicon oxide having a particle size of 0.1 to 50.0 μm,
It is preferable that 50 to 400 parts by weight of a filler made of an insulating powder such as silicon oxide such as aluminum oxide, aluminum nitride, calcium carbonate, and magnesium oxide is dispersed with respect to 100 parts by weight of the resin.

If necessary, a colorant such as carbon black may be added to the resin filler 7 so that the resin filler 7 is colored.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, the resin adhesives 5a and 5b may be made of carbon black. If 0.5 to 3.0 parts by weight of a coloring agent is added to 100 parts by weight of the resin and colored, the contrast between the resin adhesives 5a and 5b and the external lead terminals 4 increases, and the external leads The terminal 4 and the electrode of the semiconductor element 3 can be accurately and rapidly wire-bonded using an automatic bonder.

Further, an insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, calcium carbonate, magnesium oxide or the like having a particle size of 0.1 to 50.0 μm as a filler is added to the resin adhesives 5a and 5b in a resin volume of 100 parts by volume. 5 for
Resin adhesives 5a, 5b if 0 to 400 parts by volume are dispersed
Can significantly improve the moisture permeability.

[0031]

According to the semiconductor device housing package of the present invention, since the outer peripheral edge of the insulating frame is located at least 0.5 mm or more inside the outer peripheral edge of the insulating base, the insulating frame is bonded to the insulating base. At the time of fixing, a large amount of resin paste, which is a resin adhesive printed and applied to the lower surface of the insulating frame, does not flow out of the insulating base due to the pressing force due to the weight of the insulating frame, and is used for housing semiconductor elements. It is possible to effectively prevent the appearance defect from occurring in the package.

At the same time, since a large amount of resin adhesive does not flow out of the insulating base, even if the external lead terminals are bent so that they can be connected well to an external electric circuit, the resin adhesive can be used. The agent is not pulled by the force to bend the external lead terminal and peels off from the external lead terminal. As a result, the adhesion between the external lead terminal and the resin adhesive is strengthened, and the external lead terminal and the resin adhesive are A gap can be effectively prevented from being formed between them.

Therefore, according to the semiconductor device housing package of the present invention, moisture and the like contained in the air do not come into contact with the electrodes of the semiconductor device and the bonding wires connected to the electrodes. It is possible to operate the semiconductor element normally and stably for a long time without causing any corrosion.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

FIG. 2 is a cross-sectional view of a conventional semiconductor element storage package.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Semiconductor element mounting part 2 ... Insulating frame 3 ... Semiconductor element 4 ... External lead terminals 5a, 5b: resin adhesive

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁶ , DB name) H01L 23/00-23/10 H01L 23/28-23/30 H01L 21/56

Claims (1)

(57) [Claims] An insulating base having a mounting portion on which a semiconductor element is mounted, an insulating frame surrounding the mounting portion and forming a space for accommodating the semiconductor element therein, and external lead terminals interposed therebetween. A semiconductor element housing package which is sandwiched and adhered via a resin adhesive, wherein an outer peripheral edge of the insulating frame is located at least 0.5 mm or more inside an outer peripheral edge of an insulating base, and the resin The adhesive has a particle size of 0.1
50 to 50 μm of insulating filler per 100 parts by volume of resin
And 50 to 400 parts by volume .