JPH08148599A - Semiconductor-element storing package - Google Patents

Abstract

PURPOSE: To provide a semiconductor-element storing package which perfects the airtight sealing of a semiconductor element and operates the semiconductor element normally and safely during a long term. CONSTITUTION: In a semiconductor-element storing package, an insulation base 1 having a mounting part 1a for mounting a semiconductor element 3 thereon and an insulation frame 2 which surrounds the mounting part 1a and forms the space for storing the semiconductor element 3 therein are bonded to each other via a resin bonding agent 5 while outer lead terminals 5 are interposed between them. In this package, the resin bonding agent 5 is formed by mixing a bisphenol A type epoxy resin of 100wt.% with a silica powder of 200-300wt.%, an acid anhydride based hardening agent of 30-50wt.%, an amine based hardening agent of 5-20wt.%, and a silane coupling agent of 0.5-2wt.%.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element is made of an electrically insulating material such as alumina ceramics, and has an insulating base having a mounting portion for mounting the semiconductor element in a substantially central portion of its upper surface. , An insulating frame body which is also made of an electrically insulating material and has an opening in a central portion so as to surround the semiconductor element mounting portion of the insulating base, and a semiconductor element housed inside for electrically connecting to an external electric circuit. It is composed of multiple external lead terminals,
A resin paste prepared by adding an amine-based curing agent and a solvent to a cresol novolac type epoxy resin is applied by screen printing on the outer peripheral surface of the upper surface of the insulating substrate and the outer peripheral surface of the lower surface of the insulating frame, and this is applied at about 80 ° While heating to a temperature to disperse the solvent in the paste, a resin adhesive is applied to the insulating base and the insulating frame in advance, and then external lead terminals are placed on the resin adhesive of the insulating base. About this
The external lead terminals are fixed to the upper surface of the insulating base through a resin adhesive by heating to a temperature of 150 ° C. Then, the insulating frame is mounted on the upper surface of the insulating base to which the external lead terminals are fixed. Place the resin adhesive previously applied to the body so that the external lead terminals are on the side, and heat cure the resin adhesive applied to the lower surface of the insulating frame at a temperature of about 150 ° C. It is manufactured by adhesively fixing an insulating base body to which external lead terminals are fixed and an insulating frame body.

In such a conventional semiconductor element housing package, a semiconductor element is fixed to a semiconductor element mounting portion of an insulating substrate located in an opening of an insulating frame, and each electrode of the semiconductor element is connected to an external lead terminal via a bonding wire. After that, the opening of the insulating frame is filled with a filling material such as epoxy resin, and the semiconductor element is hermetically sealed to obtain a semiconductor device as a final product.

[0004]

However, in this conventional package for accommodating semiconductor elements, the thermal expansion coefficient of the resin adhesive is 100 × 10 ⁻⁶ / ° C. Expansion coefficient (6.5 x 10 ^{-6 /} ° C ~ 7.5 when the insulating base and insulating frame are made of alumina ceramics)
X 10 ^-6 / ° C), the resin adhesive and the insulating base body and the insulating frame body are not bonded to each other when the insulating base body, the insulating frame body and the external lead terminals are bonded and fixed via the resin adhesive agent. Large thermal stress due to the difference in the thermal expansion coefficient between the two occurs and the thermal stress causes cracks or breaks in the insulating substrate or the insulating frame body, as a result, the hermetic sealing of the semiconductor element is broken, The semiconductor device has a drawback that it cannot operate normally and stably for a long period of time.

[0005]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to complete the hermetic sealing of a semiconductor element and to operate the semiconductor element normally and stably for a long period of time. Providing a storage package.

[0006]

According to the present invention, there is provided an insulating base body having a mounting portion on which a semiconductor element is mounted, and an insulating frame body surrounding the mounting portion and forming a void for accommodating the semiconductor element therein. A package for storing a semiconductor device, which is formed by adhering an external lead terminal between them with a resin adhesive interposed between the resin adhesive and 100% by weight of bisphenol A type epoxy resin, and silica powder of 200%. To 300 wt%, acid anhydride curing agent 30 to 50 wt%, amine curing agent 5 to 20 wt%, silane coupling agent 0.5 to
It is characterized by being formed by adding 2% by weight.

According to the present invention, the silica powder is 200 to 300% by weight of silica powder having a particle size of 1.0 to 50.0 μm and a particle size of 0.5.
It is characterized by being composed of 1.5 to 10% by weight of fine silica powder having a particle size of not more than μm.

[0008]

According to the package for accommodating semiconductor elements of the present invention, the resin adhesive for adhering and fixing the insulating substrate, the insulating frame and the external lead terminals to the bisphenol A type epoxy resin 100
Silica powder is 200 to 300% by weight, acid anhydride curing agent is 30 to 50% by weight, and amine curing agent is 5% by weight.
To 20% by weight and 0.5 to 2% by weight of a silane coupling agent, and its thermal expansion coefficient approximates that of an insulating substrate or an insulating frame. 10 × 10 ^{-6 /} ° C to 20.0 ×
Since it is 10 ^-6 / ° C, when the insulating base, the insulating frame and the external lead terminal are bonded and fixed to each other via the resin adhesive, there is a large gap between the resin adhesive and the insulating base and the insulating frame. It is possible to effectively prevent the occurrence of cracks or fractures in the insulating base body or the insulating frame due to the thermal stress and the thermal stress, and as a result, the hermetic sealing of the semiconductor element is completed and the semiconductor element is sealed. It can operate normally and stably for a long period of time.

[0009]

The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, and a glass ceramics sintered body. An insulating substrate made of an electrically insulating material such as a unit, 2 is an insulating frame made of an electrically insulating material.

The insulating substrate 1 has a mounting portion 1a on which the semiconductor element 3 is mounted, in a substantially central portion of its upper surface.
The semiconductor element 3 is adhered and fixed to 1a via an adhesive made of resin or the like.

When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, an organic solvent suitable for alumina (Al ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (MgO), etc., The raw material powder obtained by adding and mixing the solvent is filled in a press die having a shape corresponding to the insulating substrate 1 and is shaped by applying a constant pressure, and then the shaped body is fired at a temperature of about 1600 ° C. It is produced by doing.

On the upper surface of the insulating base body 1, an insulating frame body 2 is adhesively fixed with a resin adhesive 5 with an external lead terminal 4 interposed therebetween.

The insulating frame 2 has an opening A formed in the center thereof and has a frame shape surrounding the mounting portion 1a to which the semiconductor element of the insulating base 1 is fixed. The insulating frame body 2 forms a space for accommodating the semiconductor element 3 therein by the opening A at the center thereof and the upper surface of the insulating base body 1.

The insulating frame 2 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, and a glass ceramic sintered body. A method similar to that of the insulating substrate 1, specifically, alumina (Al ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (MgO), etc. obtained by adding and mixing an appropriate organic solvent and solvent. The raw material powder is filled in a press die having a shape corresponding to the insulating frame 2 and is formed by applying a constant pressure, and then the formed body is fired at a temperature of about 1600 ° C. .

An external lead terminal 4 is sandwiched between the insulating base body 1 and the insulating frame body 2, and each electrode of the semiconductor element 3 is connected to one end of the external lead terminal 4 via a bonding wire 6. It is electrically connected, and the other end side is electrically connected to an external electric circuit.

The external lead terminal 4 is made of an iron alloy such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or a copper alloy made of copper, nickel, silicon, zinc, or the like. ) Is formed into a predetermined plate shape by adopting a conventionally known metal processing method such as a rolling processing method or a punching processing method.

The external lead terminal 4 is coated with silver, aluminum or the like on its surface by a plating method, a vapor deposition method or a clad method to a thickness of 0.5 to 20.0 μm. The joint is designed to be strong.

Further, the external lead terminals 4 are fixedly adhered to the insulating substrate 1 and the insulating frame body 2 through a resin adhesive 5. The resin adhesive 5 is 100% by weight of bisphenol A type epoxy resin. Formed by adding 200 to 300% by weight of silica powder, 30 to 50% by weight of acid anhydride type curing agent, 5 to 20% by weight of amine type curing agent, and 0.5 to 2% by weight of silane coupling agent. Has been done.

In order to bond the external lead terminals 4 between the insulating base 1 and the insulating frame 2 via the resin adhesive 5, first, the bisphenol A is attached to the outer peripheral surface of the upper surface of the insulating base 1.
200% silica powder to 100% by weight of epoxy resin
To 300% by weight, acid anhydride curing agent 30 to 50% by weight,
A resin paste containing 5 to 20% by weight of an amine-based curing agent and 0.5 to 2% by weight of a silane coupling agent is applied by printing using a screen printing method, and then the external lead terminals 4 are applied on the upper surface of the insulating substrate 1. Place it and put it in about 15
The external lead terminals 4 are fixed to the upper surface of the insulating substrate 1 by heating to a temperature of 0 ° C. and thermosetting the resin paste, and then to the lower surface of the insulating frame body 2 in the same manner as bisphenol A.
200% silica powder to 100% by weight of epoxy resin
To 300% by weight, acid anhydride curing agent 30 to 50% by weight,
A resin paste containing 5 to 20% by weight of an amine-based curing agent and 0.5 to 2% by weight of a silane coupling agent is applied by printing using a screen printing method, and the insulating base 1 to which the external lead terminals 4 are fixed is applied. Place it on the upper surface of
Thereafter, the resin paste applied to the lower surface of the insulating frame 2 is thermally cured at a temperature of about 150 ° C.
In this case, the resin adhesive 5 made of the bisphenol A type epoxy resin or silica powder has a coefficient of thermal expansion of 10 or less.
× 10 ^-6 / ℃ ~ 20 × 10 ^-6 / ℃, the thermal expansion coefficient of the insulating substrate 1 and the insulating frame 2 (insulating substrate 1 and insulating frame 2 is made of aluminum oxide sintered body 6.5 x 10 ^{-6 in case}
/ ℃ ~ 7.5 × 10 ^-6 / ℃) resin adhesive
No large thermal stress is generated between 5 and the insulating base 1 and the insulating frame 2, and the thermal stress does not cause cracks or breaks in the insulating base 1 and the insulating frame 2.

The silica powder used for the resin adhesive 5 is a component for controlling the thermal expansion coefficient of the resin adhesive 5 and improving the moisture resistance, and the addition amount thereof is bisphenol A type epoxy resin 100. 200% by weight to% by weight
If the amount is less than the above, the above properties are not imparted, and if it exceeds 300% by weight, the viscosity of the resin adhesive 5 becomes high and the insulating substrate 1
Also, it becomes difficult to adhere the insulating frame 2 by the screen printing method. Therefore, the addition amount of the silica powder is specified in the range of 200 to 300% by weight with respect to 100% by weight of the bisphenol A type epoxy resin.

The acid anhydride-based curing agent used in the resin adhesive 5 is a component that cures the resin adhesive 5 with high mechanical strength and is composed of phthalic anhydride, maleic anhydride or the like. EH700 (a product name of Asahi Denka Co., Ltd.) is preferably used, and if the addition amount is less than 30% by weight or more than 50% by weight with respect to 100% by weight of the bisphenol A type epoxy resin, the resin adhesive 5 The mechanical strength is greatly reduced. Therefore, the amount of the acid anhydride curing agent added is 30 to 100% by weight of the bisphenol A type epoxy resin.
It is specified in the range of 50% by weight.

Further, the amine-based curing agent used in the resin adhesive 5 controls the viscosity of the resin adhesive 5 and
1 is a component for facilitating the adhesion to the insulating frame 1 and the insulating frame 2 by the screen printing method and for curing the resin adhesive 5. It is composed of triethylenetetramine, diethylaminopropylamine, m-phenylenediamine, etc. PN23 (trade name of Ajinomoto Co., Inc.) is preferably used,
If the added amount is less than 5% by weight with respect to 100% by weight of the bisphenol A type epoxy resin, the above properties are not imparted, and if it is more than 20% by weight, the mechanical strength of the resin adhesive 5 is significantly reduced. I will end up. Therefore, the amount of the curing accelerator added is specified in the range of 5 to 20% by weight with respect to 100% by weight of the bisphenol A type epoxy resin.

Furthermore, the silane coupling agent used in the resin adhesive 5 controls the viscosity of the resin adhesive 5 and facilitates the deposition on the insulating substrate 1 and the insulating frame 2 by the screen printing method. It is a component for adding bisphenol A type epoxy resin to 100% by weight of the bisphenol A type epoxy resin.
If it is less than 5% by weight, the above properties are not imparted, and if it exceeds 2% by weight, the mechanical strength of the resin adhesive 5 is significantly reduced. Therefore, the amount of the silane coupling agent added is specified within the range of 0.5 to 2% by weight based on 100% by weight of the bisphenol A type epoxy resin.

Thus, according to the package for accommodating semiconductor elements of the present invention, the semiconductor element 3 is fixed to the semiconductor element mounting portion 1a of the insulating substrate 1 with an adhesive and each electrode of the semiconductor element 3 is bonded with the bonding wire 6 The semiconductor device 3 is a final product by connecting to the external lead terminal 4 via the resin, and finally filling the resin filler 7 into the opening A of the insulating frame 2 and hermetically sealing the semiconductor element 3.

As the resin filler 7 for hermetically sealing the semiconductor element 3, for example, a resin such as an epoxy resin, a polyimide resin, a phenol resin, a silicone resin is used, and the epoxy resin is filled in the opening A of the insulating frame 2. The semiconductor element 3 is placed in the opening A of the insulating frame 2 so as to be hermetically sealed by filling a resin paste such as a resin and thermosetting it at a temperature of about 150 ° C.

The resin filler 7 has a particle size of 0.
50 to 100 parts by weight of filler made of insulating powder such as 1 to 10.0 μm of silicon oxide, aluminum oxide, aluminum nitride, calcium carbonate, magnesium oxide, etc. per 100 parts by weight of resin.
By dispersing 400 parts by weight, the moisture permeability of the resin filler 7 can be improved and the semiconductor element housed inside can be more firmly protected from the external environment. Therefore, the resin filler 7 has a particle size of 0.1 to 10.0 μm of silicon oxide, aluminum oxide,
It is preferable to disperse 50 to 400 parts by weight of a filler composed of an insulating powder of aluminum nitride, calcium carbonate and magnesium oxide with respect to 100 parts by weight of the resin.

If desired, the resin filler 7 may be colored by adding a colorant such as carbon black to the resin filler 7.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the above-mentioned embodiments, the resin adhesive 5 Bisphenol A type epoxy resin 10
Silica powder added to 200 to 300% by weight to 0% by weight, silica powder with a particle size of 1.0 to 50.0 μm 200 to 30
0% by weight, fine silica powder with a particle size of 0.5 μm or less 1.5 to 10
If it is formed in a weight percentage, the thermal expansion coefficient of the resin adhesive 5 approximates to the thermal expansion coefficient of the insulating substrate 1 and the insulating frame 2, and the mechanical strength and moisture resistance of the resin adhesive 5 are large. Further, the resin adhesive 5 can be easily applied to the insulating base 1 and the insulating frame 2 by the screen printing method. Therefore, the silica powder added as the resin adhesive 5 with respect to 100% by weight of the bisphenol A type epoxy resin is 200 to 300% by weight, and the silica powder having a particle size of 1.0 to 50.0 μm is 200 to 300% by weight and the particle size is 0.5. It is preferable to form it by 1.5 to 10% by weight of fine silica powder having a particle size of less than μm.

[0029]

According to the package for accommodating semiconductor elements of the present invention, the resin adhesive for adhering and fixing the insulating substrate, the insulating frame and the external lead terminals is a bisphenol A type epoxy resin.
Silica powder is 200 to 300% by weight, acid anhydride curing agent is 30 to 50% by weight, amine curing agent is 5 to 20% by weight, and silane coupling agent is 0.5 to 100% by weight.
It is formed by adding 2% by weight, and its thermal expansion coefficient is close to that of the insulating substrate or insulating frame. 10 × 10 ^-6 / ° C ~
Since 20.0 × 10 ⁻⁶ / ° C., when the insulating base, the insulating frame and the external lead terminal are bonded and fixed via the resin adhesive, between the resin adhesive, the insulating base and the insulating frame It is possible to effectively prevent a large thermal stress from being generated in the insulating substrate and the insulating frame or the insulating frame from being cracked by the thermal stress. As a result, the hermetic sealing of the semiconductor element is completed, and the semiconductor element is completely sealed. The element can be operated normally and stably for a long period of time.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

[Explanation of symbols]

 1-Insulating substrate 1a-Semiconductor element mounting portion 2--Insulation frame body 3--Semiconductor element 4--External lead terminal 5-・ ・ ・ ・ ・ Resin adhesive

Claims (2)

[Claims] 1. An insulating base body having a mounting portion on which a semiconductor element is mounted, an insulating frame body surrounding the mounting portion and forming a space for accommodating the semiconductor element therein, and an external lead terminal provided therebetween. A package for housing a semiconductor element, which is sandwiched and adhered via a resin adhesive, wherein the resin adhesive is 100 to 100% by weight of bisphenol A type epoxy resin, and 200 to 300% by weight of silica powder and acid anhydride. 30 curing agents
A package for storing a semiconductor device, characterized in that it is formed by adding 50 to 50% by weight, 5 to 20% by weight of an amine-based curing agent, and 0.5 to 2% by weight of a silane coupling agent. 2. The silica powder comprises 200 to 300% by weight of silica powder having a particle diameter of 1.0 to 50.0 μm, and 1.5 to 10% by weight of fine silica powder having a particle diameter of 0.5 μm or less. Package for semiconductor device storage.