JP2000252392A - Wiring board for mounting semiconductor device and its mounting structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To maintain a strong and long-time stable electric connection between a semiconductor device and a wiring board by preventing the bending of the wiring board made by bonding the semiconductor device on the surface of an insulating substrate, sealing the whole body with sealing material, and preventing the absorption of moisture by thermosetting resin used for bonding the sealing material and the semiconductor device. SOLUTION: This wiring board comprises a ceramic insulating substrate 1, a metallized interconnection layer 5 formed at least on the surface of the insulating substrate 1, and a semiconductor device B which is bonded and secured on the surface of the ceramic insulating substrate 1 and is electrically connected to the metallized interconnection layer 5 by wires 9. The wires 9 and the semiconductor device B are sealed with sealing material 10 including thermosetting resin, and a very rigid plate 11 having a coefficient of thermal expansion 15 ppm/ deg.C or below and a Young's modulus 80 GPa or above, at 0-100 deg.C, is bonded and secured on the surface of the sealing material 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board on which a semiconductor element is mounted on a surface of a ceramic wiring board and sealed with a thermosetting resin, and a structure for mounting the wiring board on an external circuit board such as a motherboard. The present invention relates to the improvement of the thermal history characteristics of the sealing structure and the durability of use.

[0002]

2. Description of the Related Art Conventionally, a ceramic wiring board has a structure in which a metallized wiring layer is provided on the surface or inside of an insulating substrate made of alumina ceramic or the like. As a typical example of the wiring board, a semiconductor element package in which a semiconductor element is mounted on the surface of the wiring board and the semiconductor element is hermetically sealed with a sealing material such as a lid or a resin is known.

In such a semiconductor element package, for example, a metallized wiring layer made of a refractory metal powder such as tungsten is disposed on the surface of an insulating substrate made of alumina ceramics, and a semiconductor is formed on the surface of the insulating substrate with an adhesive. The element is bonded and fixed, and the electrode of the semiconductor element is electrically connected to the metallized wiring layer via a wire by a wire bonding method or the like. Thereafter, the semiconductor element and the wire are hermetically sealed with a sealing material containing a thermosetting resin.

In general, as the degree of integration of a semiconductor element increases, the number of electrodes formed on the semiconductor element also increases. However, the number of electrodes formed on the semiconductor element increases. The number of connection terminals formed on the back surface also tends to increase. Therefore, a structure capable of increasing the density of the connection terminals is required, and a ball grid array (BG) is used in which a pin-type connection terminal, which has been conventionally used, is replaced with a ball-type connection terminal such as solder.
A) is becoming mainstream.

[0005] Further, the demand for package miniaturization has been increasing year by year. For such miniaturization, recently, a chip size package (CSP) having a chip area of 50% or more of the area of the wiring board has been developed. It is becoming mainstream.

Further, in a package (wiring board) on which the semiconductor element is mounted, a connection terminal formed on the bottom surface of the package and a wiring conductor formed on a surface of an external circuit board such as a motherboard are connected to a conductive material such as a brazing material. It is mounted by electrically connecting and fixing with an adhesive. Generally, the external circuit board is made of an organic material containing a resin component, such as a printed circuit board, or a composite material of an organic material and an inorganic material.

However, in a wiring board having connection terminals formed at a high density such as BGA, if ceramics such as alumina and mullite conventionally used as an insulating substrate are used, an organic resin such as a glass-epoxy resin composite material is used. When mounted on an external circuit board such as a printed circuit board, the heat generated during operation of the semiconductor element is repeatedly applied to both the ceramic insulating board and the external circuit board, and is generated by the difference in thermal expansion between the external circuit board and the ceramic insulating board Due to the applied thermal stress, the connection terminals are peeled off from the ceramic insulating substrate and cracks are generated around the connection terminals, so that the wiring board cannot be stably maintained on the external circuit board for a long time.

[0008] Accordingly, the present applicants have proposed a conventional alumina,
Instead of mullite or other ceramics, the insulating substrate is made of ceramics with a high thermal expansion coefficient of 8 ppm / ° C or higher and a low Young's modulus to approximate the thermal expansion coefficient of the external circuit board (15-20 ppm / ° C). It was proposed to improve the connection reliability of the wiring board to the external circuit board by doing so.

[0009]

However, when a semiconductor element and a wire are sealed with a sealing material in a wiring board using such a high thermal expansion and low Young's modulus ceramics as an insulating substrate, the semiconductor element and the wire are not sealed. Since the ceramic insulating substrate is likely to warp due to the stress caused by the thermal expansion difference between the sealing material for sealing the ceramic insulating substrate and the ceramic insulating substrate, high stress is applied to the connection terminals connecting the external circuit board and the wiring board. Has a new problem of working.

The thermosetting resin used for the adhesive or the sealing material for bonding and fixing the semiconductor element is mainly made of an epoxy resin. However, since this epoxy resin has a hygroscopic property, it cannot be used in a high-humidity atmosphere. There is also a problem that the adhesiveness and the strength are remarkably deteriorated when held for a long time.

Accordingly, the present invention is used for bonding and fixing a semiconductor element to the surface of an insulating substrate and for generating a warp in a wiring board sealed with a sealing material, and for bonding a sealing material and a semiconductor element. It is an object of the present invention to provide a semiconductor element mounting wiring board which suppresses moisture absorption of a thermosetting resin, and which is capable of maintaining a strong and stable electric connection for a long time and having remarkably excellent long-term use reliability. is there.

[0012]

The present inventors have made various studies on the above objects and as a result, have found that a ceramic plate or metal having specific physical properties is provided on the surface of a sealing material for sealing a semiconductor element and a wire. It has been found that the above object can be achieved by bonding and fixing the plate.

That is, the present invention provides a ceramic insulating substrate,
A metallized wiring layer adhered and formed on at least a surface of the insulating substrate; and a semiconductor element adhered and fixed to the surface of the ceramic insulating substrate and electrically connected to the metallized wiring layer by a wire. And a semiconductor element mounting wiring board in which the semiconductor element is sealed with a sealing material containing a thermosetting resin, an insulating base containing at least the organic resin for the wiring board, and wiring adhered to the surface thereof A mounting structure in which the connection terminals of the wiring board are mounted on the wiring layer of the external circuit board by mounting on a surface of an external circuit board having a layer, and a sealing material in the semiconductor element mounting wiring board. A high-rigidity plate having a coefficient of thermal expansion at 0 to 100 ° C. smaller than that of the sealing material and a Young's modulus of 80 GPa or more is adhered and fixed to the surface.

In the above wiring board and its mounting structure, the thickness of the ceramic plate or the metal plate is 0.2 to 1 mm, and the thickness of the high rigidity plate is 0 to 100 mm.
The thermal expansion coefficient at 15 ° C. is 15 ppm / ° C. or less, and the Young's modulus of the ceramic insulated wiring board is 200 G
Pa or less, and the area of the ceramic plate or metal plate is 30% of the sealing area by the sealing material.
% Of the ceramic insulating substrate.
It is desirable that the thermal expansion coefficient at 0 ° C. is 8 ppm / ° C. or more.

[0015]

In the semiconductor element mounting wiring board, the thermal expansion coefficient of the sealing material containing the thermosetting resin for sealing the semiconductor element and the wire is larger than that of the ceramic insulating substrate. Therefore, a high stress is generated particularly at a low temperature due to a difference in thermal expansion between the two, a warp occurs in the ceramic insulating substrate, and as a result, a high stress acts on a connection terminal connecting the wiring board and the external circuit board, The connection terminals are peeled off from the ceramic insulating substrate or cracks occur around the connection terminals, resulting in poor connection, and the wiring board cannot be stably maintained on the external circuit board for a long time.

On the other hand, according to the present invention, the surface of the sealing material has a smaller coefficient of thermal expansion than that of the sealing material and has a Young's modulus of 8
By bonding and fixing a high-rigidity plate made of a ceramic plate or a metal plate of 0 GPa or more, the expansion / contraction of the sealing material can be prevented, so that the warpage of the ceramic insulating substrate can be reduced. Reduce the stress generated in the terminals. Accordingly, a strong electrical connection is reliably maintained for a long time without causing a connection failure between the wiring board and the external circuit board, and high reliability is maintained for a long-term use.

In addition, since a high-rigidity plate such as a ceramic plate or a metal plate is bonded and fixed to the surface of the sealing material, the area of the sealing material in direct contact with the outside air can be reduced. Long-term electrical connection between the semiconductor element and the insulating substrate can be prevented because deterioration of the sealing property of the sealing material due to the hygroscopicity of the material and the adhesiveness of the adhesive for bonding the semiconductor element can be prevented. And high reliability is maintained.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device mounting wiring board according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a schematic sectional view showing an example of a mounting structure of a semiconductor element mounting wiring board and an external circuit board of the present invention. In this example, the present invention is applied to a ball grid array (BGA) type chip size package (CSP). Shows the case. In FIG. 1, A is a BGA type package, B is a semiconductor element, and C is an external circuit board.

According to the package A, the semiconductor element B is formed on the surface of the ceramic insulating substrate 1 as a metallized wiring layer.
A metallized pad 2 for connection to the substrate is formed. A plurality of connection terminals 3 for connection to an external circuit board C are attached to the bottom surface of the ceramic insulating substrate 1, and the connection terminals 3 are formed between the metallized pads 2 on the surface of the insulating substrate 1 and the insulating substrate 1. They are electrically connected via a through-hole conductor 4 formed inside, an internal metallized wiring layer 5 and the like.

In the BGA type package A shown in FIG.
The connection terminal 3 is formed of a ball-shaped solder ball, and is attached to a connection pad 6 formed on the bottom surface of the insulating substrate 1 by soldering or the like.

On the other hand, the semiconductor element B is made of an Si material, and the insulating substrate 1 is made of an adhesive 7 made of a thermosetting resin.
It is adhesively fixed on the surface. The semiconductor element B is provided with an electrode 8, and the electrode 8 is electrically connected to the metallized pad 2 by a conductive connection member such as a wire 9. The semiconductor element B and the wire 9 are completely sealed from the outside by a sealing material 10 containing a thermosetting resin.

According to the package A, the ceramic insulating substrate 1 is made of a ceramic material containing alumina, silicon nitride, silica, borosilicate glass, mullite, etc. as a main component. In order to improve the reliability of mounting on an external circuit board using an organic resin such as a motherboard as an insulating base, it is desirable that the coefficient of thermal expansion be close to the thermal expansion characteristic of the insulating base of the external circuit board. From such a viewpoint, it is desirable that the thermal expansion coefficient of the insulating substrate 1 at 0 to 100 ° C. is 8 ppm / ° C. or more.

The insulating substrate 1 has a Young's modulus of 20.
Desirably, it is 0 GPa or less. This is because the smaller the Young's modulus of the insulating substrate 1, the more the stress due to the difference in thermal expansion with the external circuit substrate 1 can be reduced.

Further, the material of the metallized wiring layer 2 includes copper, silver, gold, tungsten, molybdenum, etc. In order to reduce the resistance of the wiring layer, the metallized pad 2, the through-hole conductor 4, Metallized wiring layers such as internal metallized wiring layers 5 and connection pads 6 are made of copper, silver,
Desirably, it consists of at least one selected from the group of gold. Further, these metallized wiring layers are desirably formed by co-firing with the insulating substrate 1 in order to increase the number of wiring layers.

In order to co-fire with the above-mentioned low-resistance metal, the insulating substrate 1 is made of a ceramic which can be fired at a temperature of 800 to 1100 ° C., in particular, a glass obtained by molding and firing a mixture of ceramic filler and glass. Ceramics are most preferred. In this case, as the glass, known glass materials such as zinc borosilicate glass, lead borosilicate glass, alkali silicate glass, PbO glass, BaO glass, and ZnO glass are used. , SiO ₂ (quartz, quartz, tridymite, cristobalite, etc.), Al ₂ O ₃ , forsterite, mullite, zirconia, magnesia, petalite and the like.

The glass and the ceramic filler are preferably compounded in an appropriate ratio so that the firing temperature falls within the above range, specifically, in a ratio of 20:80 to 90:10 by volume. It is.

The sealing material 10 for sealing the semiconductor element B and the wire 9 is generally made of epoxy resin,
At least one thermosetting resin selected from the group consisting of a phenol resin, a polyimide resin, a urea resin, and a melamine resin is included. These thermosetting resins have a curing temperature of 10
A material that is hardened at a temperature of 0 to 200 ° C. and does not adversely affect the semiconductor element B or the like by heating is selected. In addition, a sealing material containing these thermosetting resins generally has a coefficient of thermal expansion at 0 to 100 ° C. of 10 to 50 p.
pm / ° C., and appropriately mixed with quartz glass, alumina, mica, zirconium silicate, lithium silicate and the like at a ratio of 10 to 200 parts by weight per 100 parts by weight of the resin.

According to the present invention, a significant feature is that the high-rigidity plate 11 is bonded and fixed to the surface of the sealing material 10 which seals the semiconductor element B and the wire 9. The coefficient of thermal expansion of the high-rigidity plate 11 at 0 to 100 ° C.
It is important that the coefficient of thermal expansion is smaller than zero. This is because when the thermal expansion coefficient of the high-rigidity plate 11 is larger than that of the sealing material, expansion / contraction of the sealing material cannot be suppressed, and the thermal cycle characteristics deteriorate. In particular, the coefficient of thermal expansion of a highly rigid plate is 1
It is desirably 5 ppm / ° C. or less, particularly 12 ppm / ° C. or less, and more desirably 10 ppm / ° C. or less.

The high rigidity plate 11 has a Young's modulus of 80.
It is important that it be GPa or more. This Young's modulus is 8
If it is less than 0 GPa, the high-rigidity plate 11 is flexible and easily deformed, so that there is no effect of suppressing the expansion / contraction of the sealing material, the warpage of the entire package cannot be suppressed, and the thermal cycle characteristics deteriorate. This Young's modulus is 100 GPa
It is desirable that the pressure be 150 GPa or more.

The thickness of the high-rigidity plate 11 is 0.2 mm.
More preferably, it is more preferably 0.3 mm or more. Although this depends on the material of the high-rigidity plate 11, if the thickness of the high-rigidity plate 11 is smaller than 0.2 mm, the thickness of the high-rigidity plate 11 and the encapsulant 10 may be high due to the stress caused by the difference in thermal expansion between the high-rigidity plate 11 and the sealing material 10. This is because the rigid plate 11 may be broken or easily deformed, and the effect of suppressing the contraction of the sealing material 10 may not be sufficiently exhibited.

On the other hand, if the thickness of the high-rigidity plate 11 is too large, it may not be possible to adapt to the miniaturization and thinning of the package. In some cases, stress is generated in the stopped wire 9 and a failure such as the wire 9 coming off may occur. Further, when the thickness is increased, the stress generated due to the difference in thermal expansion between the high-rigidity plate 11 and the sealing material 10 cannot be reduced by the deformation of the plate itself. It leads to peeling. Therefore, the thickness of the high-rigidity plate is suitably 1 mm or less.

Further, it is desirable that the bonding area of the high-rigidity plate 11 to the sealing material 10 is 30% or more, particularly 50% or more of the sealing area by the sealing material. This bonding area is a ratio of the bonding area of the high-rigidity plate to the sealing material to the total sealing area of the surface of the wiring board by the sealing material in a plan view. If this area is smaller than 30%, it is difficult to sufficiently suppress the expansion / contraction of the sealing material by the high-rigidity plate 11.

As the material of the high-rigidity plate 11 having the above-mentioned characteristics, ceramics mainly composed of at least one of glass, glass ceramics, alumina, silicon nitride, mullite, silicon carbide, zirconia and aluminum nitride, or Si, Mo, Pt, Ti, W, Zr, C
It is desirable to use a metal containing at least one of r and Nb as a main component.

The placement of the high-rigidity plate 11 on the sealing material 10 is particularly effective when the Young's modulus of the insulating substrate 1 is 200 GPa or less. That is, as described above, the Young's modulus of the insulating substrate 1 is desirably 200 GPa or less in order to alleviate the generation of stress due to the difference in thermal expansion with the external circuit board. Due to the difference, the insulating substrate 1 has a low Young's modulus, so that deformation is likely to occur. On the other hand, according to the present invention, since the high-rigidity plate 11 is bonded and fixed to the surface of the sealing material 10, the expansion / contraction of the sealing material 10 having high thermal expansion can be prevented. The warpage of the substrate can be reduced.

The BGA type package A is manufactured as follows. For example, a slurry is prepared by adding an organic binder to a mixture of 20 to 90% by volume of the glass and 80 to 10% by volume of the filler as needed, and the slurry is formed into a sheet, and then the surface of the sheet-shaped formed body is formed. Then, a conductive paste containing a low-resistance metal such as copper, gold, or silver is applied by printing. If desired, a through hole is formed at a predetermined position of the sheet-like molded body by a microdrill, a laser, or the like, and the hole is filled with the conductive paste. Then, after laminating and pressing a plurality of the sheet-shaped molded bodies to form a laminated body, the laminated body is degreased in a nitrogen atmosphere or a nitrogen atmosphere containing water vapor, and then baked at a temperature of 800 to 1000 ° C. Can be manufactured.

To mount the semiconductor element B on the BGA type package A, an uncured (soft state) thermosetting resin 7 is applied to the surface of the insulating substrate 1 and then the semiconductor element B is coated.
The thermosetting resin 7 is completely cured and fixed by heating to a temperature of about 100 to 200 ° C. Then, using a wire bonder device, the semiconductor element B
And the metallized pad 2 are electrically connected by wires 9.

Thereafter, a sealing material 10 containing a thermosetting resin is applied so as to cover the wires 9 and the entire semiconductor element B.
A ceramic or metal high-rigidity plate 5 having a thermal expansion coefficient of 15 ppm / ° C. or less and a Young's modulus of 80 GPa or more is placed thereon, and then heated to a temperature of about 100 to 200 ° C. to completely seal the sealing material. At the same time as curing, the high-rigidity plate 5 is bonded and fixed. In this manner, a BGA type package on which the semiconductor element B is mounted can be manufactured.

The B on which the semiconductor element is mounted as described above
The GA type package is mounted on the surface of an external circuit board C such as a motherboard. This external circuit board C is generally made of an epoxy resin as an organic resin such as a printed board,
It contains at least one kind of thermosetting resin selected from phenolic resin, aramid resin, polyimide resin and polyolefin resin, and further contains glass as a filler component, glass-epoxy resin, organic material such as glass-polyimide resin composite material. An insulating substrate 12 is formed of a composite material containing a resin, and Cu, Au, Al, N
i, a structure in which a wiring layer 13 containing at least one kind of metal selected from Pb-Sn is adhered and formed.

Then, the package B is mounted on the surface of the external circuit board C, and the connection terminals 3 of the package A are electrically connected to the wiring layer 13 on the external circuit board C side by a brazing material such as solder. By doing so, the package A can be mounted on the surface of the external circuit board C.

[0040]

EXAMPLE 1 As an insulating substrate material for a package A, a ceramic material composed of the composition shown in Table 1 was prepared. In addition, the Young's modulus and the coefficient of thermal expansion at 0 to 100 ° C. of the insulating substrate material of the manufactured package were measured.

As a material for the high-rigidity plate, ceramics having various thicknesses were prepared by firing a composition as shown in Table 2 under the conditions shown in Table 2. Various metal materials as shown in Table 3 were also prepared. The Young's modulus and the coefficient of thermal expansion of the produced ceramic plate and the metal plate were prepared in the same manner as described above.

Using various ceramic materials shown in Table 1 as an insulating substrate, a metallized wiring layer including connection pads connected to a semiconductor element, an internal metallized wiring layer and a via hole conductor are provided on the surface thereof, and a ball is provided on the bottom surface of the insulating substrate. A package A substrate was prepared by simultaneously firing 144 connection pads for attaching the shape terminals at a temperature and an atmosphere shown in Table 1 according to a known method by printing or filling a copper paste.

Then, the connection pads on the lower surface of the substrate
High melting point solder having a diameter of 0.5 mm (Sn: Pb weight ratio = 1)
0:90) ball with low melting point solder (Sn: Pb weight ratio = 6)
3:37) to prepare a package A.
The dimensions of the manufactured package are 13 mm long x 13 mm wide
X The thickness is 0.4 mm.

On the other hand, made of silicon (Si),
Thermal expansion coefficient at 400 ° C is 2.6 ppm / ° C, length 8
A semiconductor element B having a size of 8 mm × 8 mm in width is prepared, and this is packaged in the package A with a bisphenol-type epoxy resin (0 to 10).
(Thermal expansion coefficient at 0 ° C. was 35 ppm / ° C.). Then, the electrodes of the semiconductor element B and the connection pads of the package A were electrically connected by wires using a wire bonder.

Then, a sealing material (0 to 100 ° C.) in which 40% by weight of novolak type epoxy resin and 60% by weight of quartz glass are mixed on the surface of the wiring board including the semiconductor element B and the wire
, A thermal expansion coefficient of 22 ppm / ° C.), and a thickness of 0.3 m shown in Tables 1, 2 and 3 on the surface of the sealing material.
m on a ceramic or metal plate, 150 ℃
Then, the sealing material was hardened by heating at, and the ceramic plate or the metal plate was bonded and fixed. The ratio of the area of the ceramic plate or metal plate bonded to the sealing material to the total area of the sealing portion was 80%.

Thereafter, a BGA type package on which the semiconductor element is mounted is placed on a motherboard (external circuit board) having a wiring layer made of Cu formed on the surface of an insulating base made of glass epoxy resin, and The ball made of high melting point solder and the wiring layer of the motherboard were connected by low melting point solder, and the package was mounted on the motherboard.

(Thermal Cycle Test) A BGA type package having a semiconductor element mounted thereon as described above is mounted on a motherboard, and is held at -40 ° C. in an air atmosphere for 25 minutes /
The cycle of holding at 125 ° C. for 25 minutes was repeated up to a maximum of 1500 cycles. Then, the electrical resistance between the package and the motherboard was measured every 100 cycles, and the number of cycles when the resistance changed was shown in Table 1. At the same time, the separation between the high-rigidity plate and the sealing material was visually confirmed.
Table 4 shows the results.

(Hygroscopic Reflow Test) Similarly, a semiconductor element A mounted on a package substrate B was heated at 30 ° C.
It was placed in a high-temperature, high-humidity chamber controlled at 60% humidity for 192 hours. Then, it is taken out and put into a reflow furnace having a maximum temperature of 240 ° C., and the ultrasonic flaw detector is used to confirm that the sealing material and the high-rigidity plate placed thereon and the interface between the sealing material and the insulating substrate are separated. Was done. Table 4 shows the results.

[0049]

[Table 1]

[0050]

[Table 2]

[0051]

[Table 3]

[0052]

[Table 4]

As is clear from Table 2, the samples Nos. 1, 12, 23, 27, and 32 having no high-rigidity plate and the materials D and h having a higher thermal expansion coefficient than the sealing material were used. Samples Nos. 11, 18 and Sample Nos. 2, 3, 11, 12, 20, 2, using materials whose Young's modulus was less than 80 GPa
In Nos. 4 and 29, destruction occurred near the connection terminal in less than 1000 cycles, and an increase in electric resistance was observed.

On the other hand, 0 to 100
The sample of the present invention, in which a high-rigidity plate having a thermal expansion coefficient smaller than that of the encapsulant at 80 ° C. and a Young's modulus of 80 GPa or more was adhered and fixed, the electrical resistance value of the connection portion even after the heat cycle test 1000 cycles test There was no change and no peeling between the mounting plate and the sealing material, and no peeling at the interface between the plate and the sealing material was observed even after the moisture absorption reflow test.

Example 2 In the same manner as in Example 1, several kinds of high-rigidity plates having different thicknesses were adhered and fixed in accordance with the combinations shown in Table 5, and the heat cycle test and the moisture absorption reflow test were performed in the same manner as in Example 1. Table 5 shows the results. In this example, the ratio of the bonding area of the ceramic plate or metal plate to the sealing material to the total area of the sealing portion was 50%. As shown in Table 5, the optimal thickness of the high-rigidity plate was 0.2 to 1 mm.

[0056]

[Table 5]

Example 3 In the same manner as in Example 1, according to the combination shown in Table 5, the ratio of the area of the ceramic plate or metal plate to the sealing material and the ratio to the total area of the sealing portion was changed and fixed. ,
A thermal cycle test and a moisture absorption reflow test were performed in the same manner as in Example 1, and the results are shown in Table 6. As shown in Table 6, the contact area of the high-rigidity plate with the sealing material was optimally 30% or more.

[0058]

[Table 6]

[0059]

As described in detail above, according to the semiconductor element mounting wiring board of the present invention, when a sealing material is applied to seal a semiconductor element and a wire, the ceramic insulating substrate and the sealing material The warpage of the wiring board caused by the difference in thermal expansion of the wiring board is suppressed, and the wiring board and the semiconductor element are accurately
In addition, it is possible to make a strong electrical connection. Further, in the wiring board of the present invention, it is possible to reduce the moisture absorption of the sealing material and the adhesive used for fixing the semiconductor element, and to prevent the adhesive strength and the strength from deteriorating. Can be fixed.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a mounting structure when a ball grid array (BGA) type chip size package is used as a semiconductor element mounting wiring board of the present invention.

[Description of Signs] A BGA type package B Semiconductor element C External circuit board 1 Ceramic insulating substrate 2 Metallized pad 3 Connection terminal 4 Through-hole conductor 5 Internal metallized wiring layer 6 Connection pad 7 Adhesive 8 Electrode 9 Wire 10 Sealant 11 High rigidity plate 12 Insulating base 13 Wiring layer

Continuing from the front page (72) Inventor Yoshihiro Nakao 1-4, Yamashita-cho, Kokubu-shi, Kagoshima Inside the Kyocera Research Institute (72) Inventor Kenichi Nagae 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima Kyocera Corporation General F term in the laboratory (reference) 4M109 AA01 BA03 CA05 DA08 DB15 EA02 EB13 EC01 EC04 EE02

Claims (14)

[Claims] 1. A ceramic insulating substrate, a metallized wiring layer formed on at least the surface of the insulating substrate, and adhesively fixed to the surface of the ceramic insulating substrate, and electrically connected to the metallized wiring layer by wires. A semiconductor element, wherein the wire and the semiconductor element are sealed with a sealing material containing a thermosetting resin, and the surface of the sealing material has a coefficient of thermal expansion at 0 to 100 ° C. A high-rigidity board having a smaller modulus and a Young's modulus of 80 GPa or more is fixedly bonded thereto. 2. The wiring board according to claim 1, wherein said high-rigidity plate is made of a ceramic material or a metal material. 3. The wiring board according to claim 1, wherein the high-rigidity plate has a coefficient of thermal expansion at 0 to 100 ° C. of 15 ppm / ° C. or less. 4. The ceramic insulating substrate has a Young's modulus of 20.
2. The wiring board according to claim 1, wherein the wiring board has a pressure of 0 GPa or less. 5. The wiring board according to claim 1, wherein an area of the high-rigidity plate bonded to the sealing material is 30% or more of a sealing area of the sealing material. 6. The semiconductor element mounting wiring board according to claim 1, wherein said ceramic insulating substrate has a coefficient of thermal expansion at 0 to 100 ° C. of 8 ppm / ° C. or more. 7. The wiring board according to claim 1, wherein said high-rigidity plate has a thickness of 0.2 to 1 mm. 8. A ceramic insulating substrate, a metallized wiring layer formed on at least the surface of the insulating substrate, and adhesively fixed to the surface of the ceramic insulating substrate, and electrically connected to the metallized wiring layer by wires. A semiconductor element mounting wiring board comprising a plurality of connection terminals provided on the back surface of the insulating substrate, the wires and the semiconductor element being sealed by a sealing material containing a thermosetting resin. An insulating base containing a resin, and placed on the surface of an external circuit board having a wiring layer adhered and formed on the surface thereof, and connecting terminals of the wiring board are brazed to the wiring layer of the external circuit board. In the mounting structure of the semiconductor element mounting substrate, the surface of the sealing material of the semiconductor mounting wiring substrate is
A mounting structure for a semiconductor element mounting wiring board, wherein a high-rigidity plate having a coefficient of thermal expansion at 0 ° C. smaller than that of the sealing material and a Young's modulus of 80 GPa or more is bonded and fixed. 9. The mounting structure according to claim 8, wherein said high-rigidity plate is made of ceramic or metal. 10. The mounting structure according to claim 8, wherein the high-rigidity plate has a coefficient of thermal expansion at 0 to 100 ° C. of 15 ppm / ° C. or less. 11. The mounting structure according to claim 8, wherein the ceramic insulating wiring substrate has a Young's modulus of 200 GPa or less. 12. The mounting structure according to claim 8, wherein a bonding area of the high-rigidity plate with the sealing material is 30% or more of a sealing area by the sealing material. 13. The temperature of the ceramic insulating substrate is from 0 to 100 ° C.
The thermal expansion coefficient in the above is 8 ppm / ° C or more.
The mounting structure of the semiconductor element mounting wiring board described in the above. 14. The mounting structure for a wiring board according to claim 8, wherein said high-rigidity plate has a thickness of 0.2 to 1 mm.