JPH02194633A - Method and device for manufacturing semiconductor device - Google Patents
Method and device for manufacturing semiconductor deviceInfo
- Publication number
- JPH02194633A JPH02194633A JP1533589A JP1533589A JPH02194633A JP H02194633 A JPH02194633 A JP H02194633A JP 1533589 A JP1533589 A JP 1533589A JP 1533589 A JP1533589 A JP 1533589A JP H02194633 A JPH02194633 A JP H02194633A
- Authority
- JP
- Japan
- Prior art keywords
- sealing resin
- pressure
- substrate
- resin
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title description 35
- 239000011347 resin Substances 0.000 claims abstract description 77
- 229920005989 resin Polymers 0.000 claims abstract description 77
- 238000007789 sealing Methods 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 abstract description 43
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 5
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 21
- 239000007789 gas Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004382 potting Methods 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- -1 halogen ions Chemical class 0.000 description 2
- 238000007602 hot air drying Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は１例えばゲームカードのような、配線基板上に
直接半導体素子を搭載し封止樹脂で封止した機器に用い
ることが出来ゐ半導体装置の製造方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor device that can be used in devices such as game cards, in which a semiconductor element is directly mounted on a wiring board and sealed with a sealing resin. This relates to a manufacturing method.
従来の技術
近年、パッケージングされた半導体素子を基板上に半田
付けにより実装する工法に代わり、直接半導体素子を基
板上に搭載し、樹脂封止するチップオンボード工法が、
小型薄型の実装方式として注目されている。このような
半導体装置の製造方法については１例えば日経マイクロ
デバイス１９８６年６月号に記載されている。Conventional technologyIn recent years, chip-on-board technology has been introduced, in which semiconductor elements are directly mounted on a substrate and sealed with resin, instead of the method of mounting packaged semiconductor elements on a substrate by soldering.
It is attracting attention as a small and thin mounting method. A method for manufacturing such a semiconductor device is described in, for example, the June 1986 issue of Nikkei Microdevice.
以下、図面を参照しながら従来の半導体装置の製造方法
について説明する。第３図は従来の半導体装置の製造方
法の工程を示す断面図である。Hereinafter, a conventional method for manufacturing a semiconductor device will be described with reference to the drawings. FIG. 3 is a cross-sectional view showing the steps of a conventional semiconductor device manufacturing method.
まず、第３図ａに示すように、接続端子６と、封止樹脂
の流れ止め用のダム２が形成された耐熱性基板１上に、
半導体素子３をダイスボンド樹脂４により固定する。First, as shown in FIG. 3a, on a heat-resistant substrate 1 on which a connecting terminal 6 and a dam 2 for preventing the flow of sealing resin are formed,
The semiconductor element 3 is fixed with a die bond resin 4.
次に、第３図すに示すように、半導体素子３の所定の接
続パッドと耐熱性基板１上の接続端子６とを金ワイヤ−
６で電気的に接続する。Next, as shown in FIG.
6 to connect electrically.
それから、第３図Ｃに示すように、熱硬化型封止樹脂７
をボッティング法で耐熱性基板１上に滴下し、半導体素
子３を樹脂封止する。８はポツティング用ノズルである
。Then, as shown in FIG. 3C, the thermosetting sealing resin 7
is dropped onto the heat-resistant substrate 1 by a botting method, and the semiconductor element 3 is sealed with the resin. 8 is a potting nozzle.
さらに、第３図ｄに示すように、封止樹脂７をボッティ
ングした耐熱性基板１を、熱風乾燥炉ｅ中にいれ、１６
ｏ°ｃ〜１７０℃の温度で封止樹脂７を１〜１０時間で
硬化させる。Furthermore, as shown in FIG. 3d, the heat-resistant substrate 1 on which the sealing resin 7 has been sealed is placed in a hot air drying oven e, and
The sealing resin 7 is cured at a temperature of 0°C to 170°C for 1 to 10 hours.
発明が解決しようとする課題
しかしながら上記のような製造方法においては、耐熱性
基板１と封止樹脂７間の密着性が悪いので。Problems to be Solved by the Invention However, in the above manufacturing method, the adhesion between the heat-resistant substrate 1 and the sealing resin 7 is poor.
湿度の高い雰囲気中に放置しておくと、水分が耐熱性基
板１と封止樹脂７間の隙間より浸入し、半導体素子３の
パッド部が腐食断線してしまうという課題を有していた
。If left in a humid atmosphere, moisture will infiltrate through the gap between the heat-resistant substrate 1 and the sealing resin 7, causing the pad portion of the semiconductor element 3 to corrode and break.
本発明は上記課題に鑑み、耐熱性基板１と封止樹脂７間
の密着性を高め、耐湿性を向上させることを可能とする
半導体装置の製造方法を提供することを目的とするもの
である。In view of the above problems, it is an object of the present invention to provide a method for manufacturing a semiconductor device that makes it possible to increase the adhesion between the heat-resistant substrate 1 and the sealing resin 7 and improve moisture resistance. .
課題を解決するための手段
そして上記目的を達成するために一本発明の半導体装置
の製造方法は、封止樹脂の硬化工程を、大気圧以上の圧
力下で行うものである。Means for Solving the Problems and In order to achieve the above objects, a method for manufacturing a semiconductor device according to the present invention is such that the curing step of the sealing resin is performed under a pressure equal to or higher than atmospheric pressure.
作用
本発明は、上記した製造方法によって、封止樹脂と基板
との密着性を高めることにより、容易に水分が半導体素
子に到達しないようにして、耐湿性を向上させるもので
ある。Function The present invention improves moisture resistance by increasing the adhesion between the sealing resin and the substrate using the above-described manufacturing method, thereby preventing moisture from easily reaching the semiconductor element.
実施例
以下、本発明の実施例について図面を参照しながら説明
する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.
第１図は、本発明の第１の実施例における半導体装置の
製造方法の工程を示す断面図である。なお第１図におい
て第３図に示す従来の半導体装置の製造方法と対応する
ところには同じ番号が付けである。FIG. 1 is a cross-sectional view showing steps of a method for manufacturing a semiconductor device according to a first embodiment of the present invention. Note that in FIG. 1, parts corresponding to the conventional semiconductor device manufacturing method shown in FIG. 3 are given the same numbers.
まず、第１図ａに示すように、接続端子６と。First, as shown in FIG. 1a, the connection terminal 6.
封止樹脂の流れ止め用のダム２が形成された耐熱性基板
１上に、半導体素子３をダイスポンド樹脂４により固定
する。A semiconductor element 3 is fixed by die pound resin 4 onto a heat-resistant substrate 1 on which a dam 2 for preventing the flow of sealing resin is formed.
次に、第１図すに示すように、半導体素子３の所定の接
続パッドと耐熱性基板１上の接続端子６とを金ワイヤ−
６で電気的に接続する。Next, as shown in FIG.
6 to connect electrically.
それから、第１図Ｏに示すように、熱硬化型封止樹脂７
をボッティング法で耐熱性基板１上に滴下し、半導体素
子３を樹脂封止する。８はボッティング用ノズルである
。Then, as shown in FIG.
is dropped onto the heat-resistant substrate 1 by a botting method, and the semiconductor element 3 is sealed with the resin. 8 is a nozzle for botting.
さらに、第１図ｄに示すように、封止樹脂７をポツティ
ングした耐熱性基板１を圧力容器１ｏ中に入れ、ガス１
３を注入し圧力容器１ｏ中を大気圧以上の圧力にした後
、ヒーター１４０輻射熱により、封止樹脂７を硬化させ
る。Furthermore, as shown in FIG. 1d, the heat-resistant substrate 1 potting the sealing resin 7 is placed in the pressure vessel 1o,
3 is injected to make the pressure in the pressure vessel 1o higher than atmospheric pressure, and then the sealing resin 7 is cured by radiant heat from the heater 140.
このように、本実施例では一加圧状態で封止樹脂７を硬
化させるので、耐熱性基板との密着性を向上させること
ができ、耐湿性を改善することができる。なお、１２は
ガス１３を大気圧以上の圧力で積めたボンベであり、１
１はガスボンベ１２より圧力容器１０へのガスの流れを
制御するためのバルブでるる。In this way, in this embodiment, the sealing resin 7 is cured under one pressurized state, so that the adhesiveness with the heat-resistant substrate can be improved, and the moisture resistance can be improved. In addition, 12 is a cylinder in which gas 13 can be loaded at a pressure higher than atmospheric pressure, and 1
1 is a valve for controlling the flow of gas from the gas cylinder 12 to the pressure vessel 10.
以上のように本実施例によれば、ポツティング法により
滴下した封止樹脂７の硬化工程を、大気圧以上の圧力下
で行うことにより、封止樹脂７と耐熱性基板１との密着
性を高め、容易に水分が半導体素子３に到達しないよう
にして耐湿性を向上させている。As described above, according to this embodiment, the adhesiveness between the sealing resin 7 and the heat-resistant substrate 1 is improved by performing the curing process of the sealing resin 7 dropped by the potting method at a pressure higher than atmospheric pressure. The moisture resistance is improved by preventing moisture from easily reaching the semiconductor element 3.
また−本実施例では、ガス１３として、窒素ガスを用い
た。窒素ガスは、封止樹脂７に対する溶解度が小さいの
で、加圧状態にしても一封止樹脂Ｔ中に溶は込むガスの
量を少なくすることができる。このように、圧力容器１
０中に注入するガス１３として、封止樹脂７に対する溶
解度の小さなものを用いることにより、硬化後の封止樹
脂Ｔ中に残留する気胞が小さくなるため、気胞間を浸透
する水分が少なくなり−なおいっそう耐湿性を向上させ
ることができる。Furthermore, in this embodiment, nitrogen gas was used as the gas 13. Since nitrogen gas has low solubility in the sealing resin 7, the amount of gas that dissolves into the sealing resin T can be reduced even under pressure. In this way, pressure vessel 1
By using a gas 13 with low solubility in the sealing resin 7 as the gas 13 injected into the sealing resin 7, the air pores remaining in the sealing resin T after curing become smaller, so that less moisture permeates between the air pores. Furthermore, moisture resistance can be further improved.
さらに、封止樹脂７と接する耐熱性基板１の表面を荒し
ておけば、封止樹脂７と耐熱性基板１とのアンカー効果
によってさらに密着性を向上させることができ、また、
表面を荒すことにより水分の浸入経路が長くなるので、
耐湿性をさらに向上させることができる。耐熱性基板１
０表面を荒す方法としては、半導体素子３を搭載する前
に耐熱性基板１０表面を不活性ガス、例えば窒素ガスの
プラズマ中にさらす方法等がある。Furthermore, if the surface of the heat-resistant substrate 1 in contact with the sealing resin 7 is roughened, the adhesion can be further improved due to the anchor effect between the sealing resin 7 and the heat-resistant substrate 1, and
Roughening the surface lengthens the path for moisture to penetrate.
Moisture resistance can be further improved. Heat resistant substrate 1
As a method for roughening the surface, there is a method of exposing the surface of the heat-resistant substrate 10 to plasma of an inert gas, for example, nitrogen gas, before mounting the semiconductor element 3 thereon.
次に、本発明の第２の実施例について図面を参照しなが
ら説明する。Next, a second embodiment of the present invention will be described with reference to the drawings.
第２図は１本発明の第２の実施例における半導体装置の
製造方法の封止樹脂の硬化工程に用いる製造装置の模式
図である。第１図に示す本発明の第１の実施例における
半導体装置の製造方法と対応するところには同じ番号が
付けである。FIG. 2 is a schematic diagram of a manufacturing apparatus used in a step of curing a sealing resin in a method for manufacturing a semiconductor device according to a second embodiment of the present invention. Components corresponding to the method for manufacturing a semiconductor device according to the first embodiment of the present invention shown in FIG. 1 are given the same numbers.
第２図において、１０は圧力容器、１２は圧力容器１０
中を加圧状態にする手段としてのガスボンベである。１
６はガスボンベ１２より圧力容器１０へのガスの流れを
制御するためのパルプである。１７は圧力容器１ｏ中を
減圧状態にする手段としてのポンプで、１６は圧力容器
１ｏとポンプ１７間に挿入されたパルプである。１４は
封止樹脂７を硬化させる手段としてのヒーターである。In FIG. 2, 10 is a pressure vessel, and 12 is a pressure vessel 10.
This is a gas cylinder that serves as a means to pressurize the inside. 1
6 is a pulp for controlling the flow of gas from the gas cylinder 12 to the pressure vessel 10. Reference numeral 17 denotes a pump as means for reducing the pressure in the pressure vessel 1o, and 16 indicates a pulp inserted between the pressure vessel 1o and the pump 17. A heater 14 serves as a means for curing the sealing resin 7.
以下、本発明の第２の実施例の工程について説明する。The steps of the second embodiment of the present invention will be explained below.
まず１本発明の第１の実施例を示す第１図＆〜＠１図Ｃ
の工程、すなわち半導体素子３を耐熱性基板１上に搭載
し、金ワイヤ−６で電気的に接続した後、封止樹脂７を
ボッティング法で耐熱性基板１上に滴下するという工程
を経九〇〇Ｂ基板１８を、第２図に示す製造装置中に載
置する。First of all, Fig. 1 & ~ @ Fig. 1 C showing the first embodiment of the present invention
After the process of mounting the semiconductor element 3 on the heat-resistant substrate 1 and electrically connecting it with the gold wire 6, the sealing resin 7 is dropped onto the heat-resistant substrate 1 by a botting method. The 900B substrate 18 is placed in the manufacturing apparatus shown in FIG.
次に、パルプ１６を開け、ポンプ１７により圧力容器１
ｏ中を減圧状態にする。このように減圧状態にすること
により一封止樹脂７中にとけ込んでいたガスを脱泡ル取
り除くことができる。Next, the pulp 16 is opened and the pressure vessel 1 is pumped by the pump 17.
Reduce the pressure inside o. By creating a reduced pressure state in this manner, the gas dissolved in the sealing resin 7 can be defoamed and removed.
それから、パルプ１Ｂを閉じた後、パルプ１６を開は圧
力容器１ｏ中をガスボンベ１２により加圧状態にして、
ヒーター１４０輻射熱により封止樹脂７を硬化させる。Then, after closing the pulp 1B, the pulp 16 is opened by pressurizing the inside of the pressure vessel 1o with the gas cylinder 12.
The sealing resin 7 is cured by radiant heat from the heater 140.
以上のように本実施例によれば、ポツティング法により
滴下した封止樹脂７の硬化工程を、−旦減圧状態にして
封止樹脂７中にとけ込んでいるガスを取り除いた後加圧
状態にしてから行うので、硬化後の封止樹脂中に残留す
る気胞を除去し、封止樹脂７を緻密化させることができ
るので、耐湿性を向上させることができる。As described above, according to this embodiment, the curing process of the sealing resin 7 dropped by the potting method is performed by first reducing the pressure, removing the gas dissolved in the sealing resin 7, and then applying the pressure. Since it is performed from the beginning, air pores remaining in the sealing resin after curing can be removed and the sealing resin 7 can be densified, so that the moisture resistance can be improved.
次に、本発明の第３の実施例に付いて説明する。Next, a third embodiment of the present invention will be described.
本発明の第３の実施例は、基板に耐熱性ではない比較的
安価表基板を用いたものである。第３図に示した従来の
半導体装置の製造方法においては、製造工程中にいくつ
かの熱処理工程があった。例えば、第３図ａに示したダ
イスボンド工程、第３図すに示した金ワイヤ−６で電気
的接続を取る工程、第３図ｄに示した封止樹脂７を加熱
硬化させる工程などである。そのうち、ダイスボンド工
程は低温硬化型のダイスボンド樹脂を用いれば、硬化温
度を７０℃くらいに下げることが可能であり、また、金
ワイヤ−６で電気的接続を取る工程も。A third embodiment of the present invention uses a relatively inexpensive front substrate that is not heat resistant. In the conventional semiconductor device manufacturing method shown in FIG. 3, there are several heat treatment steps during the manufacturing process. For example, the die bonding process shown in FIG. 3a, the process of making an electrical connection with the gold wire 6 shown in FIG. 3S, the process of heating and curing the sealing resin 7 shown in FIG. be. Among these, in the die bonding process, if a low-temperature curing die bonding resin is used, the curing temperature can be lowered to around 70°C, and there is also a process in which electrical connections are made with gold wire 6.
ワイヤーをアルミワイヤーにしてやれば、室温で接続す
ることができる。ところが、最後の封止樹脂７を加熱硬
化させる工程では、封止樹脂７の封止効果を充分に発揮
させるため、一般に’１６０〜１７０”Ｃの温度で１〜
１０時間加熱処理を行う必要がある。そのため、基板と
して耐熱性のある基板、例えば耐熱性ガラスエポキシ基
板などを用いなければならなかった。それに対し本発明
の半導体装置の製造方法では、加圧状態の中で封止樹脂
７を硬化させるので硬化温度を下げることができる。例
えば、従来１６０℃であった硬化温度を１００”Ｃ以下
とすることができる。そのため、耐熱性が低く、従来の
工法では使用することができなかった紙フエノール等の
安価な基板も用いることができる。また１紙フェノール
基板の場合、空気中で加熱処理すると、炭化してしまう
が１本発明の第１の実施例で述べたように不活性ガスを
用いて加圧すれば炭化することもない。さらに１本発明
の製造方法では、樹脂と基板の密着性がよ〈なり水分の
浸透が少なくなるため、ハロゲンイオンを含む難燃性の
基板も用いることができる。If you use aluminum wire as the wire, you can connect it at room temperature. However, in the final step of heating and curing the sealing resin 7, in order to fully exhibit the sealing effect of the sealing resin 7, it is generally heated at a temperature of 160 to 170"C.
It is necessary to perform heat treatment for 10 hours. Therefore, a heat-resistant substrate, such as a heat-resistant glass epoxy substrate, must be used as the substrate. In contrast, in the semiconductor device manufacturing method of the present invention, the sealing resin 7 is cured under pressure, so the curing temperature can be lowered. For example, the curing temperature, which was conventionally 160°C, can be reduced to 100"C or less. Therefore, inexpensive substrates such as paper phenol, which have low heat resistance and cannot be used with conventional methods, can also be used. In addition, in the case of a paper phenol substrate, if it is heat-treated in air, it will carbonize, but as described in the first embodiment of the present invention, it can be carbonized if it is pressurized using an inert gas. Furthermore, in the manufacturing method of the present invention, flame-retardant substrates containing halogen ions can also be used because the adhesion between the resin and the substrate is improved and the penetration of moisture is reduced.
以上のように本実施例によれば、封止樹脂の硬化工程を
大気圧以上の圧力中で行うことにより硬化温度を下げる
ことができ、さらに基板と封止樹脂の界面での水分の浸
透を少なくすることができるので、耐熱性ではない比較
的安価でしかも難燃性の紙フエノール基板等を用いるこ
とができる。As described above, according to this embodiment, by performing the curing process of the sealing resin at a pressure higher than atmospheric pressure, the curing temperature can be lowered, and furthermore, the penetration of moisture at the interface between the substrate and the sealing resin can be reduced. Since the amount can be reduced, it is possible to use a paper phenol substrate that is not heat resistant, is relatively inexpensive, and is flame retardant.
また、加圧するためのガスに不活性ガスを用いることに
より、基板表面が炭化することもない。Further, by using an inert gas as the pressurizing gas, the surface of the substrate will not be carbonized.
なお、上記第１．第２．第３の実施例では、封止樹脂７
を液状樹脂として説明したが、封止樹脂７はペレット状
の固形封止樹脂でもよい。この場合、封止樹脂の流れ止
め用のダム２を設けることなく封止形状を決定すること
ができるので、工程を簡略化することができる。In addition, the above 1. Second. In the third embodiment, the sealing resin 7
Although the sealing resin 7 has been described as a liquid resin, the sealing resin 7 may be a solid sealing resin in the form of pellets. In this case, the sealing shape can be determined without providing the dam 2 for stopping the flow of the sealing resin, so the process can be simplified.
さらに、上記第１．第２．第３の実施例では。Furthermore, the above 1. Second. In the third example.
半導体素子の実装方法としてワイヤーボンディングによ
る接続方式を用いた場合について説明したが、これは、
他の半導体素子の実装方法を用いてもよい。例えば、フ
リップチップ実装方法に本発明を適用することもできる
。この場合、加圧状態で、あるいは減圧後加圧して封止
樹脂を硬化させることにより、基板と半導体素子の間に
封止樹脂を緻密に充填することができるため、従来のフ
リップチップ実装方式の欠点であった封止樹脂の未充填
による耐湿性の劣化を改善することができる。We have explained the case where a connection method using wire bonding is used as a mounting method for semiconductor elements, but this
Other semiconductor element mounting methods may also be used. For example, the present invention can also be applied to a flip-chip mounting method. In this case, the sealing resin can be densely filled between the substrate and the semiconductor element by curing the sealing resin in a pressurized state or by applying pressure after reducing the pressure. It is possible to improve the deterioration of moisture resistance due to unfilled sealing resin, which was a drawback.
発明の効果
以上の説明から明らかなように、本発明は、封止樹脂の
硬化工程を大気圧以上の圧力下で行うという工程をとっ
ているので、封止樹脂と基板との密着性を向上させるこ
とができ、水分の半導体素子への到達を阻止できるため
、耐湿性の優れた半導体装置を得ることができる。また
、その効果により、ハロゲンイオン等の不純物を含む難
燃性基板も用いることができる。Effects of the Invention As is clear from the above explanation, the present invention employs a step of curing the sealing resin at a pressure higher than atmospheric pressure, which improves the adhesion between the sealing resin and the substrate. Since moisture can be prevented from reaching the semiconductor element, a semiconductor device with excellent moisture resistance can be obtained. Further, due to this effect, a flame-retardant substrate containing impurities such as halogen ions can also be used.
さらに、封止樹脂の硬化工程を大気圧以上の圧力下で行
うことにより、封止樹脂の硬化温度を下げることができ
るため、耐熱性ではない安価な基板を用いることができ
る。Furthermore, by performing the curing process of the sealing resin at a pressure equal to or higher than atmospheric pressure, the curing temperature of the sealing resin can be lowered, so that an inexpensive substrate that is not heat resistant can be used.
また、封止樹脂の硬化工程を、−旦減圧状態にして封止
樹脂中にとけ込んでいるガスを取り除いた後、加圧状態
にしてから行うことにより、硬化後の封止樹脂中に残留
する気胞を除去することができ、それにより樹脂を緻密
化させて耐湿性を向上させることができる。In addition, by performing the curing process of the sealing resin after first reducing the pressure to remove the gas dissolved in the sealing resin and then applying the pressure, it is possible to reduce the amount of gas that remains in the sealing resin after curing. The air vesicles can be removed, thereby densifying the resin and improving its moisture resistance.
第１１ｇ１ＬＮ（１は本発明の第１の実施例における半
導体装置の製造方法の工程を示す断面図、第２図は本発
明の第２の実施例における半導体装置の製造方法の封止
樹脂の硬化工程に用いる製造装置の模式図、Ｗ！！１３
図＆ Ｎｄは従来の半導体装置の製造方法の工程を示す
断面図である。
１・・・・・・耐熱性基板、２・・・・・・ダム、３・
・・・・・半導体素子、４・・・・・・ダイスボンド樹
脂、６・−・・・・接続端子。
６・・・・・・金ワイヤ−，７・・・・・・封止樹脂−
８・・・・・・ノズル、９・・・・・・熱風乾燥炉−１
０・・・・・・圧力容器、１１゜１６．１６・・・・・
・パルプ、１２・・・・・・ボンベ、１４・・・・・・
ヒーター １７・拳・・・・ポンプ。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名第１
図
第
図
第
図11g1LN (1 is a cross-sectional view showing the steps of the method for manufacturing a semiconductor device according to the first embodiment of the present invention, and FIG. 2 is a curing of the sealing resin in the method for manufacturing a semiconductor device according to the second embodiment of the present invention. Schematic diagram of manufacturing equipment used in the process, W!!13
FIGS. &Nd are cross-sectional views showing steps in a conventional method for manufacturing a semiconductor device. 1...Heat-resistant substrate, 2...Dam, 3.
... Semiconductor element, 4 ... Dice bond resin, 6 ... Connection terminal. 6...Gold wire-, 7...Sealing resin-
8...Nozzle, 9...Hot air drying oven-1
0...Pressure vessel, 11°16.16...
・Pulp, 12...Cylinder, 14...
Heater 17.Fist...Pump. Name of agent: Patent attorney Shigetaka Awano and 1 other person 1st
Figure Figure Figure
Claims (3)
所定の接続端子とを電気的に接続する工程と、少なくと
も前記半導体素子と前記配線基板上の接続端子とを封止
樹脂で被覆する工程と、大気圧以上の加圧状態中で前記
封止樹脂を硬化させる工程とを含む半導体装置の製造方
法。(1) A step of electrically connecting a predetermined connection pad on the semiconductor element and a predetermined connection terminal on the wiring board, and covering at least the semiconductor element and the connection terminal on the wiring board with a sealing resin. and a step of curing the sealing resin in a pressurized state equal to or higher than atmospheric pressure.
所定の接続端子を電気的に接続する工程と、少なくとも
前記半導体素子と前記配線基板上の接続端子とを封止樹
脂で被覆する工程と、前記封止樹脂を載置した前記配線
基板を大気圧以下の減圧状態中で保持する工程と、引き
続き大気圧以上の加圧状態中で前記封止樹脂を硬化させ
る工程とを含む半導体装置の製造方法。(2) A step of electrically connecting a predetermined connection pad on the semiconductor element and a predetermined connection terminal on the wiring board, and a step of covering at least the semiconductor element and the connection terminal on the wiring board with a sealing resin. and a step of holding the wiring board on which the sealing resin is mounted in a reduced pressure state below atmospheric pressure, and subsequently curing the sealing resin in a pressurized state above atmospheric pressure. manufacturing method.
と、前記圧力容器を加圧状態にする手段と、前記圧力容
器中に載置され、半導体素子の封止樹脂を硬化させる手
段とを備えた半導体装置の製造装置。(3) a pressure vessel, a means for bringing the pressure vessel into a reduced pressure state, a means for bringing the pressure vessel into a pressurized state, and a means placed in the pressure vessel for curing the sealing resin of the semiconductor element; Semiconductor device manufacturing equipment equipped with
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1533589A JPH02194633A (en) | 1989-01-24 | 1989-01-24 | Method and device for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1533589A JPH02194633A (en) | 1989-01-24 | 1989-01-24 | Method and device for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02194633A true JPH02194633A (en) | 1990-08-01 |
Family
ID=11885914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1533589A Pending JPH02194633A (en) | 1989-01-24 | 1989-01-24 | Method and device for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02194633A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06120360A (en) * | 1992-10-06 | 1994-04-28 | Kyocera Corp | Package for storing semiconductor devices |
| JP2013157408A (en) * | 2012-01-27 | 2013-08-15 | Nitto Denko Corp | Light emitting diode device and manufacturing method thereof |
-
1989
- 1989-01-24 JP JP1533589A patent/JPH02194633A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06120360A (en) * | 1992-10-06 | 1994-04-28 | Kyocera Corp | Package for storing semiconductor devices |
| JP2013157408A (en) * | 2012-01-27 | 2013-08-15 | Nitto Denko Corp | Light emitting diode device and manufacturing method thereof |
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