JPH06120360A - Semiconductor device holding package - Google Patents

Semiconductor device holding package

Info

Publication number
JPH06120360A
JPH06120360A JP4267296A JP26729692A JPH06120360A JP H06120360 A JPH06120360 A JP H06120360A JP 4267296 A JP4267296 A JP 4267296A JP 26729692 A JP26729692 A JP 26729692A JP H06120360 A JPH06120360 A JP H06120360A
Authority
JP
Japan
Prior art keywords
insulating
semiconductor element
resin
external lead
insulating frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4267296A
Other languages
Japanese (ja)
Other versions
JP2792638B2 (en
Inventor
Nobuyasu Aida
信康 合田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP4267296A priority Critical patent/JP2792638B2/en
Publication of JPH06120360A publication Critical patent/JPH06120360A/en
Application granted granted Critical
Publication of JP2792638B2 publication Critical patent/JP2792638B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

PURPOSE:To prevent corrosion of electrodes of a semiconductor device and bonding wires connected to the electrodes completely, and to make the device operate normally and stably over a long period of time. CONSTITUTION:This semiconductor device holding package is one made by gluing an insulating substrate 1 having a mounting part 1a for a semiconductor device 3 to be mounted on, with an insulating frame 2 surrounding the mounting part 1a and forming a void space for holding the semiconductor device 3 inside, through the medium of an adhesive agent 5a and 5b made from resin putting its external lead terminals 4 between them. And, the peripheral edges of the insulating frame 2 are positioned least 0.5mm more inside than those of the insulating substrate 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体素子を収容する
ための半導体素子収納用パッケージの改良に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a semiconductor element housing package for housing a semiconductor element.

【0002】[0002]

【従来の技術】従来、半導体素子を収容するための半導
体素子収納用パッケージは、図2 に示すようにアルミナ
セラミックス等の電気絶縁材料から成り、その上面略中
央部に半導体素子が搭載される搭載部11a を有する絶縁
基体11と、同じく電気絶縁材料から成り、前記絶縁基体
11の半導体素子搭載部11a を囲繞するように中央部に開
口Aを有する絶縁枠体12と、内部に収容する半導体素子
を外部電気回路に電気的に接続するための複数個の外部
リード端子13とから構成されており、絶縁基体11の上面
外周部に、例えばエポキシ樹脂等から成る樹脂ペースト
14a をスクリーン印刷法を用いて印刷塗布し、次に前記
絶縁基体11の上面に外部リード端子13を載置するととも
にこれを約150℃の温度に加熱し、樹脂ペースト14a
を熱硬化させることによって絶縁基体11の上面に外部リ
ード端子13を固定させ、しかる後、絶縁枠体12の下面に
同じくエポキシ樹脂等から成る樹脂ペースト14b を印刷
塗布するとともにこれを前記外部リード端子13が固定さ
れた絶縁基体11の上面に載置し、絶縁枠体12の下面に塗
布した樹脂ペースト14b を約150℃の温度で熱硬化さ
せることによって製作されている。
2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element is made of an electrically insulating material such as alumina ceramics as shown in FIG. An insulating substrate 11 having a portion 11a, and an insulating substrate also made of an electrically insulating material.
An insulating frame 12 having an opening A in the center so as to surround the semiconductor element mounting portion 11a of 11 and a plurality of external lead terminals 13 for electrically connecting the semiconductor element housed inside to an external electric circuit. And a resin paste made of, for example, an epoxy resin, on the outer peripheral surface of the upper surface of the insulating base 11.
14a is printed and applied by a screen printing method, and then the external lead terminals 13 are placed on the upper surface of the insulating substrate 11 and heated to a temperature of about 150 ° C. to form the resin paste 14a.
The external lead terminals 13 are fixed to the upper surface of the insulating substrate 11 by thermosetting, and then the resin paste 14b also made of epoxy resin or the like is printed and applied to the lower surface of the insulating frame 12 and the external lead terminals 13 It is manufactured by placing the resin paste 14b on the upper surface of the insulating base 11 to which the 13 is fixed and thermally curing the resin paste 14b applied on the lower surface of the insulating frame 12 at a temperature of about 150 ° C.

【0003】かかる従来の半導体素子収納用パッケージ
は絶縁枠体12の開口A内に位置する絶縁基体11の半導体
素子搭載部11a に半導体素子15を固定するとともに該半
導体素子15の各電極をボンディングワイヤ16を介して外
部リード端子13に接続させ、しかる後、絶縁枠体12の開
口A内にエポキシ樹脂等の充填材を充填し、半導体素子
15を気密に封止することによって最終製品としての半導
体装置となる。
In such a conventional package for accommodating semiconductor elements, the semiconductor element 15 is fixed to the semiconductor element mounting portion 11a of the insulating base 11 located in the opening A of the insulating frame 12, and each electrode of the semiconductor element 15 is bonded with a bonding wire. It is connected to the external lead terminal 13 via 16 and then the opening A of the insulating frame 12 is filled with a filling material such as epoxy resin to form a semiconductor element.
The semiconductor device as a final product is obtained by hermetically sealing 15.

【0004】また前記従来の半導体素子収納用パッケー
ジは外部リード端子13の一端が外部電気回路に良好に電
気的接続されるよう屈曲されており、該外部リード端子
13の一端を外部電気回路に電気的に接続することによっ
て内部に収容される半導体素子15が外部電気回路と接続
されることとなる。
Further, in the conventional package for accommodating semiconductor elements, one end of the external lead terminal 13 is bent so as to be properly electrically connected to an external electric circuit.
By electrically connecting one end of 13 to an external electric circuit, the semiconductor element 15 housed inside is connected to the external electric circuit.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、この従
来の半導体素子収納用パッケージは一般に絶縁基体11と
絶縁枠体12の外形寸法が同一となっており、絶縁枠体12
の下面に樹脂ペースト14b を印刷塗布するとともにこれ
を外部リード端子13が固定された絶縁基体11の上面に載
置して絶縁基体1 と絶縁枠体12とを接着固定した場合、
絶縁枠体12の下面に塗布した樹脂ペースト14b が絶縁枠
体12の重みによる押圧力によって絶縁基体11と絶縁枠体
12の外側に流出し、半導体素子収納用パッケージに外観
不良を発生してしまう。
However, in this conventional package for accommodating semiconductor elements, the outer dimensions of the insulating base body 11 and the insulating frame body 12 are generally the same.
When the resin paste 14b is applied by printing onto the lower surface of the insulating base material 11 and is placed on the upper surface of the insulating base material 11 to which the external lead terminals 13 are fixed, and the insulating base material 1 and the insulating frame body 12 are bonded and fixed,
The resin paste 14b applied to the lower surface of the insulating frame 12 is pressed by the weight of the insulating frame 12 to the insulating base 11 and the insulating frame.
It flows out to the outside of 12 and causes a defective appearance of the package for housing the semiconductor element.

【0006】また絶縁基体11の外側に樹脂が流出すると
外部リード端子13を外部電気回路に良好に接続し得るよ
うに屈曲させた際、外部リード端子13を屈曲させる力が
絶縁基体11等の外側に流出した樹脂を引っ張って外部リ
ード端子13より剥離させ、外部リード端子13と樹脂との
間に隙間を形成してしまう。そのためこの半導体素子収
納用パッケージにおいては外部リード端子13と該外部リ
ード端子13を絶縁基体11及び絶縁枠体12に固定する樹脂
との間に形成される隙間を通して半導体素子の電極や半
導体素子に接続されるボンディングワイヤに大気中に含
まれる水分等が接触し、半導体素子の電極や半導体素子
に接続されるボンディングワイヤに腐食を招来して半導
体素子を長期間にわたり正常、且つ安定に作動させるこ
とができないという欠点も有していた。
Further, when the resin flows out to the outside of the insulating base 11, when the external lead terminal 13 is bent so as to be properly connected to an external electric circuit, the bending force of the external lead terminal 13 is applied to the outside of the insulating base 11. The resin that has flowed out to the external lead terminal 13 is pulled and separated from the external lead terminal 13 to form a gap between the external lead terminal 13 and the resin. Therefore, in this semiconductor element accommodating package, it is connected to the electrodes of the semiconductor element and the semiconductor element through a gap formed between the external lead terminal 13 and the resin fixing the external lead terminal 13 to the insulating base 11 and the insulating frame 12. Moisture contained in the atmosphere may come into contact with the bonding wire to cause corrosion of the electrode of the semiconductor element or the bonding wire connected to the semiconductor element, and operate the semiconductor element normally and stably for a long period of time. It also had the drawback of not being able to.

【0007】[0007]

【目的】本発明は上記欠点に鑑み案出されたもので、そ
の目的は半導体素子の各電極や該電極に接続されるボン
ディングワイヤに腐食を発生するのを皆無とし、半導体
素子を長期間にわたり正常、且つ安定に作動させること
ができる半導体素子収納用パッケージを提供することに
ある。
[Object] The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to prevent corrosion of each electrode of a semiconductor element or a bonding wire connected to the electrode, and to provide a semiconductor element for a long period of time. It is an object of the present invention to provide a package for accommodating a semiconductor element, which can operate normally and stably.

【0008】[0008]

【課題を解決するための手段】本発明は半導体素子が搭
載される搭載部を有する絶縁基体と、前記搭載部を囲繞
し、内部に半導体素子を収容する空所を形成する絶縁枠
体とを、その間に外部リード端子を挟んで樹脂製接着剤
を介し接着して成る半導体素子収納用パッケージであっ
て、前記絶縁枠体の外周縁が絶縁基体の外周縁より少な
くとも0.5mm 以上内側に位置することを特徴とするもの
である。
According to the present invention, there is provided an insulating base body having a mounting portion on which a semiconductor element is mounted, and an insulating frame body surrounding the mounting portion and forming a void for accommodating the semiconductor element therein. A package for storing a semiconductor element, which is formed by adhering an external lead terminal between them with a resin adhesive, wherein the outer peripheral edge of the insulating frame is located at least 0.5 mm or more inside the outer peripheral edge of the insulating base body. It is characterized by that.

【0009】[0009]

【作用】絶縁枠体の外周縁を絶縁基体の外周縁より少な
くとも0.5mm 以上内側に位置させたので絶縁基体上に絶
縁枠体を該絶縁枠体に印刷塗布させた樹脂ペーストを介
して接着固定させる際、樹脂ペーストが絶縁基体の外側
に流出することは一切なく、その結果、外部リード端子
を絶縁基体の外側で屈曲させたとしても樹脂は引っ張ら
れることなく外部リード端子に強固に接着し、これによ
って半導体素子の電極や該電極に接続されるボンディン
グワイヤに大気中に含まれる水分等が接触するのを皆無
として半導体素子を長期間にわたり正常、且つ安定に作
動させることが可能となる。
Since the outer peripheral edge of the insulating frame is located at least 0.5 mm inside the outer peripheral edge of the insulating base, the insulating frame is adhered and fixed onto the insulating base through the resin paste printed on the insulating frame. When this is done, the resin paste does not flow out to the outside of the insulating base at all, and as a result, even if the external lead terminals are bent outside the insulating base, the resin firmly adheres to the external lead terminals without being pulled, As a result, it is possible to operate the semiconductor element normally and stably for a long period of time without contacting the electrodes of the semiconductor element and the bonding wires connected to the electrodes with moisture contained in the atmosphere.

【0010】[0010]

【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1は、本発明の半導体素子収納用パッケージの一
実施例を示し、1は電気絶縁材料から成る絶縁基体、2
は同じく電気絶縁材料から成る絶縁枠体である。
The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for accommodating semiconductor elements of the present invention, in which 1 is an insulating base made of an electrically insulating material, and 2 is an insulating base.
Is an insulating frame body also made of an electrically insulating material.

【0011】前記絶縁基体1 はその上面略中央部に半導
体素子3 を搭載するための搭載部1aを有しており、該搭
載部1aには半導体素子3 が樹脂等から成る接着剤を介し
て接着固定される。
The insulating substrate 1 has a mounting portion 1a for mounting the semiconductor element 3 on the substantially central portion of its upper surface, and the semiconductor element 3 is mounted on the mounting portion 1a via an adhesive made of resin or the like. Adhesively fixed.

【0012】前記絶縁基体1は、窒化アルミニウム質焼
結体、酸化アルミニウム質焼結体、ムライト質焼結体、
炭化珪素質焼結体、ガラスセラミックス焼結体等の電気
絶縁材料から成り、例えば窒化アルミニウム質セラミッ
クスから成る場合、窒化アルミニウム粉末、イットリア
粉末等の原料粉末を絶縁基体1に対応した形状を有する
プレス型内に充填するとともに一定圧力を印加して成形
し、しかる後、前記成形体を約1800℃の温度で焼成する
ことによって製作される。
The insulating substrate 1 is made of an aluminum nitride sintered body, an aluminum oxide sintered body, a mullite sintered body,
In the case of an electrically insulating material such as a silicon carbide sintered body or a glass ceramics sintered body, for example, aluminum nitride ceramics, a raw material powder such as aluminum nitride powder or yttria powder is pressed into a shape corresponding to the insulating substrate 1. It is manufactured by filling in a mold and applying a constant pressure for molding, and then calcining the molded body at a temperature of about 1800 ° C.

【0013】また、前記絶縁基体1の上面には外部リー
ド端子4 が樹脂製接着剤5aを介して接着固定されてお
り、該外部リード端子4 の一端には半導体素子3 の各電
極がボンディングワイヤ6 を介して電気的に接続され、
また他端側は外部電気回路に電気的に接続される。
An external lead terminal 4 is adhered and fixed to the upper surface of the insulating base 1 through a resin adhesive 5a, and each electrode of the semiconductor element 3 is bonded to one end of the external lead terminal 4 with a bonding wire. Electrically connected through 6,
The other end side is electrically connected to an external electric circuit.

【0014】前記外部リード端子4 はコバール金属( 鉄
ーニッケルーコバルト合金) 、42アロイ( 鉄ーニッケル
合金) 等の鉄合金や銅、ニッケル、硅素、亜鉛等から成
る銅合金から成り、例えばコバール金属のインゴット(
塊) を圧延加工法や打ち抜き加工法等、従来周知の金属
加工法を採用することによって所定の板状に形成され
る。
The external lead terminal 4 is made of an iron alloy such as Kovar metal (iron-nickel-cobalt alloy) or 42 alloy (iron-nickel alloy), or a copper alloy such as copper, nickel, silicon or zinc. Ingot of (
The lump is formed into a predetermined plate shape by adopting a conventionally known metal processing method such as a rolling processing method or a punching processing method.

【0015】尚、前記外部リード端子4 はその表面に
銀、アルミニウム等がメッキや蒸着、クラッド法により
0.5 乃至20.0μm の厚みに被着されており、外部リード
端子4に対するボンディングワイヤ5 の接合が強固なも
のとなるようになっている。
The surface of the external lead terminal 4 is plated with silver, aluminum or the like, by vapor deposition, or by a clad method.
It is deposited to a thickness of 0.5 to 20.0 μm so that the bonding wire 5 is firmly bonded to the external lead terminal 4.

【0016】また前記外部リード端子4 を絶縁基体1 の
上面に接着固定する樹脂製接着剤5aはビスフェノール
A型エポキシ樹脂、ノボラック型エポキシ樹脂、クリシ
ジルエステル型エポキシ樹脂、クリシジルアミン型エポ
キシ樹脂、鎖状脂肪族エポキシ樹脂、脂環式エポキシ樹
脂、複素環型エポキシ樹脂等のエポキシ樹脂やポリイミ
ド、フェノール樹脂、シリコーン、ウレタン等の樹脂か
ら成り、先ず、前記絶縁基体1の上面外周部に、例えば
ビスフェノールA型エポキシ樹脂に硬化剤としてのイミ
ダゾールを添加混合して得た樹脂ペーストをスクリーン
印刷法を用いて印刷塗布し、次に前記絶縁基体1の上面
に外部リード端子4 を載置するとともにこれを約15
0℃の温度に加熱し、樹脂ペーストを熱硬化させること
によって絶縁基体1の上面に外部リード端子4 を接着固
定する。
The resin adhesive 5a for adhering and fixing the external lead terminals 4 to the upper surface of the insulating substrate 1 is bisphenol A type epoxy resin, novolac type epoxy resin, chrysidyl ester type epoxy resin, chrysidyl amine type epoxy resin, A chain aliphatic epoxy resin, an alicyclic epoxy resin, a heterocyclic epoxy resin, or another epoxy resin, or a resin such as polyimide, phenol resin, silicone, or urethane. A resin paste obtained by adding and mixing imidazole as a curing agent to a bisphenol A type epoxy resin is applied by printing using a screen printing method, and then an external lead terminal 4 is placed on the upper surface of the insulating substrate 1 and About 15
The external lead terminals 4 are adhesively fixed to the upper surface of the insulating substrate 1 by heating to a temperature of 0 ° C. and thermosetting the resin paste.

【0017】前記上面に外部リード端子4 が接着固定さ
れた絶縁基体1 は更にその上面に絶縁枠体2 が樹脂製接
着剤5bを介して接着固定されている。
The insulating base 1 having the external lead terminals 4 adhered and fixed to the upper surface thereof further has the insulating frame body 2 adhered and fixed to the upper surface thereof through the resin adhesive 5b.

【0018】前記絶縁枠体2 はその中央部に開口Bが形
成されており、絶縁基体1の半導体素子が固定される搭
載部1aを囲繞するような枠状となっている。この絶縁枠
体2はその中央部の開口Bと絶縁基体1上面とで半導体
素子3 を内部に収容するための空所を形成する。
The insulating frame 2 has an opening B formed in the center thereof and has a frame shape surrounding the mounting portion 1a of the insulating base 1 to which the semiconductor element is fixed. The insulating frame body 2 forms a space for accommodating the semiconductor element 3 therein by the opening B at the center thereof and the upper surface of the insulating base body 1.

【0019】前記絶縁枠体2 は窒化アルミニウム質焼結
体、酸化アルミニウム質焼結体、ムライト質焼結体、炭
化珪素質焼結体、ガラスセラミックス焼結体等の電気絶
縁材料から成り、前述の絶縁基体1 と同様の方法、具体
的には窒化アルミニウム粉末、イットリア粉末等の原料
粉末を絶縁枠体2 に対応した形状を有するプレス型内に
充填するとともに一定圧力を印加して成形し、しかる
後、前記成形体を約1800℃の温度で焼成することによっ
て製作される。
The insulating frame 2 is made of an electrically insulating material such as an aluminum nitride sintered body, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, and a glass ceramic sintered body. A method similar to that of the insulating substrate 1, specifically, aluminum nitride powder, yttria powder and other raw material powders are filled into a press die having a shape corresponding to the insulating frame body 2 and a constant pressure is applied to perform molding. After that, the molded body is manufactured by firing at a temperature of about 1800 ° C.

【0020】また前記絶縁枠体2 はその下面外周部に、
例えばビスフェノールA型エポキシ樹脂に硬化剤として
のイミダゾールを添加混合して得た樹脂ペーストをスク
リーン印刷法を用いて印刷塗布し、次にこれを前記上面
に外部リード端子4 を固定した絶縁基体1 上に載置する
とともに樹脂ペーストを約150℃の温度に加熱し、熱
硬化させることによって絶縁基体1の上面に接着固定さ
れる。
Further, the insulating frame body 2 is
For example, a resin paste obtained by adding and mixing imidazole as a curing agent to a bisphenol A type epoxy resin is applied by printing using a screen printing method, and then this is applied on an insulating substrate 1 having external lead terminals 4 fixed to the upper surface. And the resin paste is heated to a temperature of about 150 ° C. and thermally cured, so that the resin paste is bonded and fixed to the upper surface of the insulating substrate 1.

【0021】更に前記絶縁枠体2 はその外周縁が絶縁基
体1 の外周縁に対し、幅Xだけ内側に位置するように絶
縁基体1より若干小さな外形寸法となっている。
Further, the insulating frame 2 has an outer dimension slightly smaller than that of the insulating base 1 so that the outer peripheral edge thereof is located inside the outer peripheral edge of the insulating base 1 by the width X.

【0022】前記絶縁枠体2 はその外周縁が絶縁基体1
の外周縁より内側に位置するようになっていることから
絶縁基体1 上に絶縁枠体2 を接着固定する際、絶縁枠体
2 の下面に印刷塗布させた樹脂製接着剤5bとなる樹脂ぺ
ーストが絶縁枠体2 の重みによる押圧力によって絶縁基
体1 の外側に多量に流出することはなく、半導体素子収
納用パッケージに外観不良を発生することはない。
The outer peripheral edge of the insulating frame 2 is the insulating base body 1.
Since it is positioned inside the outer peripheral edge of the insulating frame body 2 when the insulating frame body 2 is bonded and fixed onto the insulating base body 1,
The resin paste, which is the resin adhesive 5b printed and applied on the lower surface of 2, does not flow out to the outside of the insulating base 1 by the pressing force of the weight of the insulating frame 2 in a large amount. No defects will occur.

【0023】また同時に絶縁基体1 の外側に樹脂製接着
剤5bが多量に流出するのが皆無であることから外部リー
ド端子4 を外部電気回路に良好に接続し得るように屈曲
させたとしても、樹脂製接着剤5bが外部リード端子4 を
屈曲させる力で引っ張られて外部リード端子より剥離す
ることはなく、その結果、外部リード端子4 と樹脂製接
着剤5bとの接着を強固とし、外部リード端子4 と樹脂製
接着剤5bとの間に隙間が形成されるのを有効に防止する
ことができる。
At the same time, since the resin adhesive 5b never flows out to the outside of the insulating substrate 1, even if the external lead terminals 4 are bent so as to be well connected to an external electric circuit, The resin adhesive 5b is not pulled by the force that bends the external lead terminal 4 and does not separate from the external lead terminal.As a result, the adhesion between the external lead terminal 4 and the resin adhesive 5b is strengthened, and the external lead It is possible to effectively prevent a gap from being formed between the terminal 4 and the resin adhesive 5b.

【0024】尚、前記絶縁枠体2 はその外周縁を絶縁基
体1 の外周縁に対し、幅Xだけ内側に位置するようにな
しているが、幅Xの値がX<0.5mm となると絶縁基体1
に絶縁枠体2 を接着固定する際、絶縁枠体2 の下面に印
刷塗布した樹脂製接着剤5bとなる樹脂ぺーストが絶縁枠
体2 の重みによる押圧力によって絶縁基体1 の外側に多
量に流出し、外観不良や半導体素子の電極及び該電極に
接続されるボンディングワイヤに腐食を招来してしま
う。従って、前記幅Xの値はX≧0.5mm の範囲に特定さ
れる。
The outer edge of the insulating frame 2 is located inside the outer edge of the insulating substrate 1 by a width X. However, when the value of the width X is X <0.5 mm, the insulation is insulated. Base 1
When the insulation frame 2 is fixedly adhered to the insulation frame 2, the resin paste that is the resin adhesive 5b printed and applied on the lower surface of the insulation frame 2 is applied to the outside of the insulation substrate 1 by a large amount due to the pressing force of the weight of the insulation frame 2. It will flow out, causing a poor appearance and corrosion of the electrodes of the semiconductor element and the bonding wires connected to the electrodes. Therefore, the value of the width X is specified in the range of X ≧ 0.5 mm.

【0025】かくして、本発明の半導体素子収納用パッ
ケージによれば、絶縁基体1 の半導体素子搭載部1aに半
導体素子3 を接着剤を介して固定するとともに該半導体
素子3 の各電極をボンディングワイヤ6 を介して外部リ
ード端子4 に接続し、最後に絶縁枠体2 の開口B内に樹
脂充填剤7 を充填させ、半導体素子3 を気密に封止する
ことによって最終製品としての半導体装置となる。
Thus, according to the package for accommodating a semiconductor element of the present invention, the semiconductor element 3 is fixed to the semiconductor element mounting portion 1a of the insulating substrate 1 with an adhesive and each electrode of the semiconductor element 3 is bonded with the bonding wire 6 The semiconductor device 3 is a final product by connecting to the external lead terminal 4 via the resin, and finally filling the resin filler 7 in the opening B of the insulating frame 2 and hermetically sealing the semiconductor element 3.

【0026】前記半導体素子3 を気密に封止するための
樹脂充填剤7 はエポキシ樹脂、ポリイミド、フェノール
樹脂、シリコーン等の樹脂が使用され、絶縁枠体2 の開
口B内にエポキシ樹脂等の樹脂ペーストを充填させると
ともにこれを約150℃の温度で熱硬化させることによ
って絶縁枠体2の開口B内に半導体素子3 を気密封止す
るようにして配される。
A resin filler 7 for hermetically sealing the semiconductor element 3 is made of a resin such as epoxy resin, polyimide, phenol resin or silicone, and resin such as epoxy resin is provided in the opening B of the insulating frame 2. The semiconductor element 3 is placed in the opening B of the insulating frame 2 so as to be hermetically sealed by filling the paste and thermosetting it at a temperature of about 150 ° C.

【0027】また前記樹脂充填剤7 はその内部に粒径
0.1〜50.0μmの酸化硅素、酸化アルミニウム、
窒化アルミニウム、炭酸カルシウム、酸化マグネシウム
等の絶縁物粉末から成るフィラーを樹脂100重量部に
対して50〜400重量部分散させておくと樹脂充填剤
7 の透湿性を向上させ、内部に収容する半導体素子を外
部環境からより強固に守ることができる。従って前記樹
脂充填剤7 には粒径0.1〜50.0μmの酸化硅素、
酸化アルミニウム、窒化アルミニウム、炭酸カルシウ
ム、酸化マグネシウム等酸化硅素等の絶縁物粉末から成
るフィラーを樹脂100重量に対して50〜400重量
部分散させておくことが好ましい。
The resin filler 7 contains silicon oxide, aluminum oxide, having a particle size of 0.1 to 50.0 μm,
When 50 to 400 parts by weight of a filler made of an insulating powder such as aluminum nitride, calcium carbonate, magnesium oxide or the like is dispersed in 100 parts by weight of the resin, a resin filler is obtained.
The moisture permeability of 7 can be improved, and the semiconductor element housed inside can be more firmly protected from the external environment. Therefore, the resin filler 7 contains silicon oxide having a particle size of 0.1 to 50.0 μm,
It is preferable to disperse 50 to 400 parts by weight of filler made of insulating powder such as aluminum oxide, aluminum nitride, calcium carbonate, magnesium oxide, or other silicon oxide.

【0028】更に必要であれば、樹脂充填剤7 にカーボ
ンブラック等の着色剤を含有させ、樹脂充填剤7 を着色
しておいてもよい。
If necessary, the resin filler 7 may be colored by adding a colorant such as carbon black to the resin filler 7.

【0029】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えば樹脂製接着剤5a、5bにカ
ーボンブラック等の着色剤を樹脂100重量部に対して
0.5〜3.0重量部含有させて着色しておけば樹脂製
接着剤5a、5bと外部リード端子4 とのコントラストが大
きくなって外部リード端子4 と半導体素子3 の電極とを
自動ボンダーを使用して正確、且つ高速にワイヤボンド
接続することが可能となる。
The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention. For example, the resin adhesives 5a and 5b can be replaced with carbon black. If coloring agents such as 0.5 to 3.0 parts by weight are added to 100 parts by weight of the resin and colored, the contrast between the resin adhesives 5a and 5b and the external lead terminals 4 becomes large, and the external leads are formed. The terminal 4 and the electrode of the semiconductor element 3 can be wire-bonded accurately and at high speed by using an automatic bonder.

【0030】また前記樹脂製接着剤5a、5bにフィラーと
して粒径0.1〜50.0μmの酸化硅素、酸化アルミ
ニウム、窒化アルミニウム、炭酸カルシウム、酸化マグ
ネシウム等の絶縁物粉末を樹脂100容量部に対して5
0〜400容量部分散させておけば樹脂製接着剤5a、5b
の透湿性を大幅に向上させることができる。
Insulating powder of silicon oxide, aluminum oxide, aluminum nitride, calcium carbonate, magnesium oxide or the like having a particle size of 0.1 to 50.0 μm is added to 100 parts by volume of resin as a filler in the resin adhesives 5a and 5b. To 5
Resin adhesives 5a, 5b if 0 to 400 parts by volume are dispersed
The moisture permeability of can be significantly improved.

【0031】[0031]

【発明の効果】本発明の半導体素子収納用パッケージに
よれば、絶縁枠体の外周縁を絶縁基体の外周縁より少な
くとも0.5mm 以上内側に位置させたことから絶縁基体上
に絶縁枠体を接着固定する際、絶縁枠体の下面に印刷塗
布させた樹脂製接着剤である樹脂ぺーストが絶縁枠体の
重みによる押圧力によって絶縁基体の外側に多量に流出
することはなく、半導体素子収納用パッケージに外観不
良が発生するのを有効に防止することができる。
According to the package for housing a semiconductor element of the present invention, the outer peripheral edge of the insulating frame is positioned at least 0.5 mm or more inside the outer peripheral edge of the insulating base, so that the insulating frame is bonded onto the insulating base. When fixing, the resin paste, which is a resin adhesive applied by printing on the lower surface of the insulating frame, does not flow out to the outside of the insulating base due to the pressure of the weight of the insulating frame. It is possible to effectively prevent the appearance defect from occurring in the package.

【0032】また同時に絶縁基体の外側に樹脂製接着剤
が多量に流出するのが皆無であることから外部リード端
子を外部電気回路に良好に接続し得るように屈曲させた
としても、樹脂製接着剤が外部リード端子を屈曲させる
力で引っ張られて外部リード端子より剥離することもな
く、その結果、外部リード端子と樹脂製接着剤との接着
を強固とし、外部リード端子と樹脂製接着剤との間に隙
間が形成されるのを有効に防止することができる。
At the same time, since a large amount of resin adhesive does not flow out to the outside of the insulating substrate, even if the external lead terminals are bent so that they can be connected well to an external electric circuit, the resin adhesive will be bonded. The agent is not pulled by the force that bends the external lead terminal and does not peel off from the external lead terminal.As a result, the adhesion between the external lead terminal and the resin adhesive is strengthened, and the external lead terminal and the resin adhesive are It is possible to effectively prevent a gap from being formed between them.

【0033】従って、本発明の半導体素子収納用パッケ
ージによれば半導体素子の電極及び該電極に接続される
ボンディングワイヤに大気中に含まれる水分等が接触す
ることはなく、半導体素子の電極等に腐食を招来するの
が皆無となって半導体素子を長期間にわたり正常、且つ
安定に作動させることが可能となる。
Therefore, according to the package for accommodating a semiconductor element of the present invention, the electrode of the semiconductor element and the bonding wire connected to the electrode are not brought into contact with moisture contained in the atmosphere and the electrode of the semiconductor element is Since no corrosion is caused, it becomes possible to operate the semiconductor element normally and stably for a long period of time.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体素子収納用パッケージの一実施
例を示す断面図である。
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

【図2】従来の半導体素子収納用パッケージの断面図で
ある。
FIG. 2 is a cross-sectional view of a conventional semiconductor element housing package.

【符号の説明】[Explanation of symbols]

1・・・・・・・絶縁基体 1a・・・・・・半導体素子搭載部 2・・・・・・・絶縁枠体 3・・・・・・・半導体素子 4・・・・・・・外部リード端子 5a 、5b・・・樹脂製接着剤 1 ... Insulating substrate 1a ... Semiconductor element mounting part 2 ... Insulating frame 3 ... Semiconductor element 4 ... External lead terminals 5a, 5b ... Resin adhesive

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体素子が搭載される搭載部を有する絶
縁基体と、前記搭載部を囲繞し、内部に半導体素子を収
容する空所を形成する絶縁枠体とを、その間に外部リー
ド端子を挟んで樹脂製接着剤を介し接着して成る半導体
素子収納用パッケージであって、前記絶縁枠体の外周縁
が絶縁基体の外周縁より少なくとも0.5mm以上内側に位
置することを特徴とする半導体素子収納用パッケージ。
1. An insulating base body having a mounting portion on which a semiconductor element is mounted, an insulating frame body surrounding the mounting portion and forming a space for accommodating the semiconductor element therein, and an external lead terminal provided therebetween. A package for housing a semiconductor element, which is sandwiched and adhered via a resin adhesive, wherein the outer peripheral edge of the insulating frame is positioned at least 0.5 mm or more inside the outer peripheral edge of the insulating base body. Storage package.
JP4267296A 1992-10-06 1992-10-06 Package for storing semiconductor elements Expired - Fee Related JP2792638B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4267296A JP2792638B2 (en) 1992-10-06 1992-10-06 Package for storing semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4267296A JP2792638B2 (en) 1992-10-06 1992-10-06 Package for storing semiconductor elements

Publications (2)

Publication Number Publication Date
JPH06120360A true JPH06120360A (en) 1994-04-28
JP2792638B2 JP2792638B2 (en) 1998-09-03

Family

ID=17442864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4267296A Expired - Fee Related JP2792638B2 (en) 1992-10-06 1992-10-06 Package for storing semiconductor elements

Country Status (1)

Country Link
JP (1) JP2792638B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102217059A (en) * 2011-06-03 2011-10-12 华为技术有限公司 Insulating ring, insulating assembly and package for packaging
CN109494199A (en) * 2018-06-15 2019-03-19 华为机器有限公司 A kind of flange and semiconductor power device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193033A (en) * 1983-04-15 1984-11-01 Matsushita Electric Ind Co Ltd Sealing of semiconductor element
JPS6132528A (en) * 1984-07-25 1986-02-15 Hitachi Micro Comput Eng Ltd Manufacture of semiconductor device
JPS63126238A (en) * 1986-11-15 1988-05-30 Matsushita Electric Works Ltd Manufacture of semiconductor package
JPH02102563A (en) * 1988-10-12 1990-04-16 Shindengen Electric Mfg Co Ltd Semiconductor device and manufacture thereof
JPH02194633A (en) * 1989-01-24 1990-08-01 Matsushita Electric Ind Co Ltd Method and device for manufacturing semiconductor device
JPH0354848A (en) * 1989-07-21 1991-03-08 Matsushita Electric Works Ltd Chip carrier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193033A (en) * 1983-04-15 1984-11-01 Matsushita Electric Ind Co Ltd Sealing of semiconductor element
JPS6132528A (en) * 1984-07-25 1986-02-15 Hitachi Micro Comput Eng Ltd Manufacture of semiconductor device
JPS63126238A (en) * 1986-11-15 1988-05-30 Matsushita Electric Works Ltd Manufacture of semiconductor package
JPH02102563A (en) * 1988-10-12 1990-04-16 Shindengen Electric Mfg Co Ltd Semiconductor device and manufacture thereof
JPH02194633A (en) * 1989-01-24 1990-08-01 Matsushita Electric Ind Co Ltd Method and device for manufacturing semiconductor device
JPH0354848A (en) * 1989-07-21 1991-03-08 Matsushita Electric Works Ltd Chip carrier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102217059A (en) * 2011-06-03 2011-10-12 华为技术有限公司 Insulating ring, insulating assembly and package for packaging
CN109494199A (en) * 2018-06-15 2019-03-19 华为机器有限公司 A kind of flange and semiconductor power device

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Publication number Publication date
JP2792638B2 (en) 1998-09-03

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