JP2873130B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating a semiconductor element for accommodating a semiconductor element, and more particularly to an improvement in a glass-encapsulated semiconductor element accommodating package for sealing a package by glass welding. is there.

[0002]

2. Description of the Related Art Conventionally, as shown in FIGS. 3 and 4, a semiconductor element housing package for housing a semiconductor element, especially a semiconductor integrated circuit element, is made of an electrically insulating material such as alumina ceramics, and has a semiconductor in the center. An insulating base 21 having a concave portion for forming a space for accommodating the element and having an upper surface covered with a low-melting glass layer 22 for sealing, and an electric insulating material also made of alumina ceramic or the like. A lid 23 having a concave portion for forming a space for accommodating the semiconductor element, and a lower melting point glass layer 24 for sealing is adhered to the lower surface,
An external lead terminal 26 for electrically connecting the semiconductor element 25 housed therein to an external electric circuit.The external lead terminal 26 is placed on the upper surface of the insulating base 21 and is previously attached. Low melting glass layer for sealing
The external lead terminals 26 are temporarily fixed to the insulating base 21 by melting the 22, and then the semiconductor element 25 is fixedly attached to the concave portion of the insulating base 21, and each electrode of the semiconductor element 25 is connected via a bonding wire 27. To the external lead terminals 26, and thereafter, a low-melting glass layer for sealing in which the insulating substrate 21 and the lid 23 are adhered to the respective main surfaces facing each other.
The semiconductor device as a product is obtained by melting and integrating the components 22 and 24 and hermetically sealing a container including the insulating base 21 and the lid 23.

[0003]

However, recently,
Information processing devices such as IC cards are rapidly becoming thinner, and semiconductor devices mounted on the information processing devices are required to have a reduced thickness. It is also required that the thickness of the insulating base and the lid be about 0.2 mm each, and the thickness of the low-melting glass layer for sealing is about 0.2 mm to reduce the thickness of the entire package. It has become

Therefore, the thickness of the insulating base and the lid of the above-mentioned conventional package for housing a semiconductor element is set to about 0.2 mm,
When the thickness of the entire package is reduced, the insulating base and the lid of the package are usually made of an electrically insulating material such as alumina ceramics, and the alumina ceramics are composed of an insulating base and a lid because they are fragile and have low mechanical strength. After the semiconductor element is hermetically housed inside the container, when an external force is applied to the insulating base or the lid, the insulating base or the lid is easily damaged by the external force, and as a result, the airtightness inside the container is broken and the inside of the container is broken. There is a disadvantage that the semiconductor element to be housed cannot be operated normally and stably for a long period of time.

The thickness of the low melting point glass layer for sealing is 0.2 m.
When the thickness of the entire package is reduced to about m, the spacing between the external lead terminals and the insulating base and lid is 0.05
mm and the amount of low-melting glass placed between them is reduced, resulting in a significant deterioration in the reliability of hermetic sealing of the container consisting of the insulating substrate and the lid, and the container is housed inside the container. However, there is also a disadvantage that the semiconductor device cannot be operated normally and stably for a long period of time.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and an object of the present invention is to provide a thin semiconductor device housing package which can normally and stably operate a semiconductor device housed therein for a long period of time. To provide.

[0007]

According to the present invention, an external lead terminal is sandwiched between an insulating base and a lid, and the insulating base, the lid and the external lead terminal are joined by a sealing glass member. A package for airtightly housing a semiconductor element, characterized in that a concave portion is provided in a main surface of the insulating base and the lid facing each other and in a region where an external lead terminal is in contact with the insulating substrate. It is.

[0008]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and 2 show one embodiment of the package for housing a semiconductor element of the present invention. 1 is an insulating base, 2 is a lid.
The insulating base 1 and the lid 2 constitute a container for housing the semiconductor element 3.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating the semiconductor element 3 at the center thereof, and the semiconductor element 3 is formed on the bottom surface of the concave portion 1a of the insulating base 1. It is bonded and fixed via an adhesive such as glass, resin, or brazing material.

The insulating base 1 and the lid 2 are made of an electrically insulating material such as alumina ceramics.
l ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (MgO), and the like, and an appropriate organic solvent and a solvent. The raw material powder was mixed with the insulating base 1 and the lid 2 shown in FIGS. 1 and 2. It is manufactured by filling in a press die corresponding to the above shape and applying a constant pressure to form the molded product, and then firing the molded product at a temperature of about 1500 ° C.

On the insulating base 1 and the lid 2, low-melting-point glass layers 4 and 5 for sealing are previously formed on the opposing main surfaces so as to have a thickness of about 0.1 mm, respectively. The insulating base 1 and the lid 2 are formed by heating and melting the sealing low-melting glass layers 4 and 5 adhered to the respective main surfaces of the insulating base 1 and the lid 2 and integrating them. The semiconductor element 3 is hermetically housed inside the container.

The sealing low-melting glass layers 4, 5 attached to the opposing main surfaces of the insulating substrate 1 and the lid 2 are, for example, 75.0% by weight of lead oxide, 9.0% by weight of titanium oxide, A glass paste obtained by adding a suitable organic solvent and a solvent to the glass powder and mixing the glass powder with a glass paste containing 7.5% by weight of boron and 2.0% by weight of zinc oxide by a conventionally known thick film method such as screen printing. Thereby, the insulating substrate 1 and the lid 2 are attached to the opposing main surfaces to a thickness of about 0.1 mm.

If the thermal expansion coefficient of the low melting glass layers 4 and 5 for sealing is set to a value close to the thermal expansion coefficient of the insulating base 1 and the lid 2, the insulating base 1 and the lid 2 can be combined with each other. Are bonded via the low melting glass layers for sealing 4 and 5, and when the container is airtightly sealed, the insulating base 1 and the lid 2 and the low melting glass layers for sealing 4 and 5 are both present. Almost no thermal stress occurs due to the difference in thermal expansion coefficient between the insulating base 1 and the lid.
2 can be firmly joined via the low-melting glass layers 4 and 5 for sealing. Therefore, the low melting point glass layer 4 for sealing is used.
, 5 preferably have the same thermal expansion coefficient as that of the insulating base 1 and the lid 2.

An external lead terminal 6 made of a conductive material, for example, a metal such as Kovar metal (Fe--Ni--Co alloy) or 42 alloy (Fe--Ni alloy) is provided between the insulating base 1 and the lid 2. The external lead terminal 6 is electrically connected to each electrode of the semiconductor element 3 via a bonding wire 7, and the external lead terminal 6 is connected to an external electric circuit, whereby the semiconductor element 3 is connected to an external electric circuit. It will be connected to the circuit.

The external lead terminals 6 are simultaneously sealed with the insulating base 1 when the container comprising the insulating base 1 and the lid 2 is hermetically sealed by melting and integrating the low-melting glass layers 4 and 5 for sealing. It is attached and fixed between the lid 2.

The external lead terminals 6 are manufactured by shaping an ingot made of Kovar metal or the like into a predetermined plate shape by using a conventionally known rolling method, punching method, or the like.

The external lead terminal 6 may be formed by plating a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, to a thickness of 1.0 to 20.0 μm on its outer surface by plating. 6 can be effectively prevented, and good electrical continuity between the external lead terminal 6 and the external electric circuit can be achieved. Therefore, the external lead terminal
It is preferable that a metal 6 having good conductivity and excellent corrosion resistance, such as nickel or gold, be plated on the outer surface thereof to a thickness of 1.0 to 20.0 μm by plating.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 3 is attached and fixed to the bottom surface of the concave portion 1a provided on the upper surface of the insulating base 1 via an adhesive, and each electrode of the semiconductor element 3 is connected to a bonding wire. 7 to connect to the external lead terminal 6, and then the insulating base 1 and lid 2
When the low melting glass layers 4 and 5 for sealing, which have been applied in advance on the main surfaces facing each other, are fused and integrated, the inside of the container consisting of the insulating base 1 and the lid 2 is joined. The semiconductor element 3 is hermetically sealed to provide a semiconductor device as a final product.

In the package for accommodating a semiconductor element of the present invention, it is important to form a recess in a region where the external lead terminals 6 are in contact with each other on the main surfaces of the insulating base 1 and the lid 2 facing each other.

Therefore, in the embodiment shown in FIG.
And external lead terminals 6 on each of the opposing main surfaces of the lid 2.
The concave portions 1b and 2b each having a depth of 0.03 mm, a width and a length slightly larger than those of the external lead terminals 6 are formed in regions where the external lead terminals 6 are in contact with each other.

When concave portions 1b and 2b are formed on the opposing main surfaces of the insulating base 1 and the lid 2, an external lead terminal 6 is sandwiched between the insulating base 1 and the lid 2, 1, a low-melting glass layer 4 for sealing the
, 5, the external lead terminals 6, the insulating base 1, and the lid are formed even if the thickness of the low melting glass layers 4, 5 for sealing is reduced to about 0.1 mm in order to reduce the thickness of the entire package.
The gap between the glass and the second glass is as large as about 0.13 mm, and the amount of the low-melting glass for sealing provided therebetween can be made large. Therefore, according to the semiconductor element storage package, the reliability of hermetic sealing of the container including the insulating base 1 and the lid 2 is greatly improved, and the semiconductor element 3 accommodated in the container is improved.
Can operate normally and stably over a long period of time.

Since the concave portions 1b and 2b provided in the insulating base 1 and the lid 2 are formed in a part of the insulating base 1 and the lid 2, the mechanical strength of the insulating base 1 and the lid 2 is greatly reduced. I will not do it. Therefore, even if an external force is applied to the insulating base 1 or the lid 2, the insulating base 1 or the lid 2 is not easily damaged by the external force. The reliability of hermetic sealing is improved, and the semiconductor element 3 housed therein can operate normally and stably for a long period of time.

The recesses 1b and 2b provided on the insulating base 1 and the lid 2 are formed by pressing a raw material powder such as alumina by press molding. When the insulating base 1 and the lid 2 are obtained, projections are previously formed on a press die. By providing the insulating base 1 and the lid
2 is formed in a predetermined shape at a predetermined position.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

[0025]

According to the present invention, a semiconductor element is internally formed by sandwiching an external lead terminal between an insulating base and a lid and bonding the insulating base, the lid and the external lead terminal with a sealing glass member. A package for hermetically housing a semiconductor element, wherein a concave portion is provided on a main surface of the insulating base and the lid facing each other and in a region where an external lead terminal is in contact with the package. When the external lead terminals are sandwiched between the insulating base and the lid and the external lead terminals are joined by a low-melting glass layer for sealing, the thickness of the low-melting glass layer for sealing is reduced in order to reduce the thickness of the entire package. Even when the thickness is reduced, the amount of the low-melting glass for sealing disposed between the external lead terminal and the insulating base and the lid increases, thereby improving the reliability of hermetic sealing of the container including the insulating base and the lid. Greatly improved and housed inside the container Normal conductive elements for a long period of time, it is possible to stably operate.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing an embodiment of a package for housing a semiconductor element according to the present invention.

FIG. 2 is a cross-sectional view of the package shown in FIG. 1 as viewed from an external lead terminal side.

FIG. 3 is a cross-sectional view of a conventional semiconductor element storage package.

FIG. 4 is a cross-sectional view of the package shown in FIG. 3 as viewed from an external lead terminal side.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1b ... Depression provided in insulating base 2 ... Lid 2b ... Depression provided in lid 3 ... ... Semiconductor element 4,5 ... Low melting glass layer for sealing 6 ... External lead terminal

Claims (1)

(57) [Claims] An external lead terminal is sandwiched between an insulating base and a lid, and the semiconductor element is hermetically accommodated inside by bonding the insulating base, the lid and the external lead terminal with a sealing glass member. A package for semiconductor element storage, characterized in that a recess is provided in a region where opposing main surfaces of the insulating base and the lid and an external lead terminal are in contact with each other.