JPH065723A - Package for containing semiconductor device - Google Patents

Abstract

PURPOSE:To normally and stably operate a semiconductor element to be contained in a package for a long period. CONSTITUTION:A package for containing a semiconductor element airtightly contains the element therein by holding an external lead terminal 6 between an insulating base 1 and a cover 3 and connecting the base 1, the cover 2 to the terminal 6 with sealing glass members 4, 5. Recesses 1b, 2b are respectively formed on opposed main surfaces of the base 1 and the cover 2 in contact with the terminal 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element, and more particularly to improvement of a glass-sealed semiconductor element housing package for sealing the package by glass welding. is there.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element, particularly a semiconductor integrated circuit element, is made of an electrically insulating material such as alumina ceramics, as shown in FIGS. An insulating substrate 21 having a concave portion for forming a space for accommodating an element and having an encapsulating low melting point glass layer 22 deposited on the upper surface thereof, and also made of an electrically insulating material such as alumina ceramics and having a central portion. A lid 23 having a recess for forming a cavity for housing a semiconductor element, and a lower melting glass layer 24 for sealing is attached to the lower surface,
An external lead terminal 26 for electrically connecting the semiconductor element 25 housed inside to an external electric circuit is formed, and the external lead terminal 26 is placed on the upper surface of the insulating substrate 21 and pre-deposited. Low melting point glass layer for sealing
The external lead terminals 26 are temporarily fixed to the insulating base 21 by melting 22 and then the semiconductor element 25 is fixedly attached to the concave portion of the insulating base 21 and each electrode of the semiconductor element 25 is bonded via the bonding wire 27. Low melting point glass layer for sealing, in which the insulating substrate 21 and the lid 23 are adhered to the respective main surfaces facing each other.
A semiconductor device as a product is obtained by melting and integrating 22 and 24 and hermetically sealing a container formed of the insulating base 21 and the lid 23.

[0003]

However, in recent years,
Information processing devices such as IC cards are rapidly becoming thinner, and semiconductor devices mounted on the information processing devices are required to have thinner thicknesses, and at the same time, for semiconductor element storage that constitutes the semiconductor device. As for the package, it is required to reduce the thickness of the entire package by setting the thickness of the insulating base and lid to about 0.2 mm each and the thickness of the low melting glass layer for sealing to about 0.2 mm. Has become.

Therefore, the thickness of the insulating base body and lid of the conventional package for accommodating semiconductor elements described above is set to about 0.2 mm,
When the thickness of the entire package is reduced, the insulating base and lid of the package are usually made of an electrically insulating material such as alumina ceramics, and the alumina ceramics are fragile and weak in mechanical strength. Therefore, the insulating base and the lid are formed. After the semiconductor element is hermetically housed inside the container, when an external force is applied to the insulating base or the lid, the insulating base or the lid is easily damaged by the external force, and as a result, the airtightness inside the container is broken and This causes a drawback that the semiconductor element to be housed cannot be operated normally and stably for a long period of time.

The thickness of the low melting glass layer for sealing is 0.2 m
If the thickness of the entire package is reduced to about m, the distance between the external lead terminals and the insulating substrate and lid is 0.05
The thickness of the glass is as thin as mm and the amount of low-melting glass placed between them is small.As a result, the reliability of the hermetic sealing of the container consisting of the insulating substrate and the lid is greatly deteriorated, and it is housed inside the container. There is also a drawback that a semiconductor element that operates cannot be operated normally and stably for a long period of time.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to provide a thin package for housing a semiconductor element capable of normally and stably operating a semiconductor element housed therein for a long period of time. To provide.

[0007]

According to the present invention, an external lead terminal is sandwiched between an insulating substrate and a lid, and the insulating substrate, the lid and the external lead terminal are joined together by a glass member for sealing to provide an internal structure. A semiconductor element housing package for hermetically accommodating a semiconductor element, characterized in that a recess is provided in the main surfaces of the insulating base body and the lid body facing each other and in the region where the external lead terminals are in contact with each other. Is.

[0008]

The present invention will now be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for housing a semiconductor device of the present invention. 1 is an insulating substrate and 2 is a lid.
The insulating base 1 and the lid 2 constitute a container that houses the semiconductor element 3.

The insulating base body 1 and the lid body 2 are each provided with a recess for forming a space for accommodating the semiconductor element 3 in the central portion thereof, and the semiconductor element 3 is provided on the bottom surface of the recess 1a of the insulating base body 1. It is adhered and fixed through an adhesive such as glass, resin, or brazing material.

The insulating base body 1 and the lid body 2 are made of an electrically insulating material such as alumina ceramics.
l ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (MgO), etc. It is manufactured by filling it in a press mold corresponding to the shape and applying a constant pressure to mold it, and then calcining the molded product at a temperature of about 1500 ° C.

Low-melting-point glass layers 4 and 5 for sealing are preliminarily adhered and formed on the insulating base 1 and the lid 2 on their respective principal surfaces facing each other so as to have a thickness of about 0.1 mm. The insulating base 1 and the lid 2 are composed of the insulating base 1 and the lid 2 by melting and sealing the low melting glass layers 4 and 5 for sealing which are adhered to the main surfaces of the insulating base 1 and the lid 2, respectively. The semiconductor element 3 is hermetically housed inside the container.

The low melting glass layers 4 and 5 for sealing, which are adhered to the main surfaces of the insulating substrate 1 and the lid 2 which face each other, are made of, for example, 75.0% by weight of lead oxide, 9.0% by weight of titanium oxide, and Glass paste consisting of 7.5% by weight boron, 2.0% by weight zinc oxide, etc., and a glass paste obtained by adding and mixing an appropriate organic solvent or solvent to the glass powder, and adopting a conventionally known thick film method such as screen printing. Thus, the insulating base body 1 and the lid body 2 are attached to each of the opposing main surfaces to a thickness of about 0.1 mm.

The low-melting glass layers 4 and 5 for sealing have the insulating base 1 and the lid 2 when the thermal expansion coefficients thereof are set to values close to the thermal expansion coefficients of the insulating base 1 and the lid 2. When the container is hermetically sealed by bonding the sealing low melting point glass layers 4 and 5 to each other, both the insulating base material 1 and the lid 2 and the sealing low melting point glass layers 4 and 5 are sealed. Almost no thermal stress is generated due to the difference in thermal expansion coefficient between the insulating base 1 and the lid.
2 and 2 can be firmly bonded to each other through the sealing low melting point glass layers 4 and 5. Therefore, the low melting point glass layer for sealing 4
, 5 are preferably matched in thermal expansion coefficient to the thermal expansion coefficients of the insulating substrate 1 and the lid 2.

An external lead terminal 6 made of a conductive material, such as a metal such as Kovar metal (Fe-Ni-Co alloy) or 42 alloy (Fe-Ni alloy), is provided between the insulating base 1 and the lid 2. The external lead terminals 6 are electrically connected to the respective electrodes of the semiconductor element 3 via the bonding wires 7, and the semiconductor element 3 is electrically connected to the external electric circuit by connecting the external lead terminals 6 to an external electric circuit. It will be connected to the circuit.

The external lead terminals 6 are formed on the insulating substrate 1 at the same time as the low melting glass layers 4 and 5 for sealing the container made of the insulating substrate 1 and the lid 2 are melt-integrated and hermetically sealed. It is attached and fixed to the lid body 2.

The external lead terminal 6 is manufactured by forming an ingot (lump) of Kovar metal or the like into a predetermined plate shape by adopting the conventionally known rolling method and punching method.

The external lead terminal 6 is formed by plating the outer surface of the metal with good conductivity and corrosion resistance such as nickel and gold to a thickness of 1.0 to 20.0 μm by plating. It is possible to effectively prevent oxidative corrosion of 6 and to make good electrical continuity between the external lead terminal 6 and the external electric circuit. Therefore, the external lead terminal
It is preferable that the outer surface of 6 is plated with a metal of good conductivity such as nickel and gold and having excellent corrosion resistance to a thickness of 1.0 to 20.0 μm by plating.

Thus, according to this semiconductor element accommodating package, the semiconductor element 3 is attached and fixed to the bottom surface of the concave portion 1a provided on the upper surface of the insulating substrate 1 with an adhesive, and each electrode of the semiconductor element 3 is bonded with a bonding wire. 7 to connect to the external lead terminal 6, and then insulate the base 1 and cover 2
And the low melting point glass layers for sealing 4 and 5 which have been previously adhered to the opposite main surfaces of the both, are joined by melting and integration into the inside of the container composed of the insulating substrate 1 and the lid 2. The semiconductor element 3 is hermetically sealed to form a semiconductor device as a final product.

In the package for accommodating semiconductor elements of the present invention, it is important to form a recess in the area where the external lead terminals 6 are in contact with each other on the main surfaces of the insulating base 1 and the lid 2 that face each other.

Therefore, in the embodiment shown in FIG.
And the external lead terminals 6 on the main surfaces of the lid 2 facing each other.
The recesses 1b and 2b each having a depth of 0.03 mm and a width and a length slightly larger than that of the external lead terminal 6 are formed in the area where they contact each other.

When the recesses 1b and 2b are formed on the main surfaces of the insulating base 1 and the lid 2 that face each other, the external lead terminal 6 is sandwiched between the insulating base 1 and the lid 2, and the insulating base is formed. Low melting point glass layer 4 for sealing 1 with lid 2 and external lead terminals 6
, 5 to reduce the thickness of the sealing low melting point glass layers 4 and 5 in order to reduce the thickness of the entire package, the external lead terminals 6, the insulating base 1 and the lid
The distance from 2 is as wide as about 0.13 mm, and the amount of the low melting glass for sealing disposed between them can be increased. Therefore, according to this semiconductor element housing package, the reliability of the hermetic sealing of the container composed of the insulating base 1 and the lid 2 is significantly improved, and the semiconductor element 3 housed inside the container is improved.
Can be operated normally and stably for a long period of time.

Further, since the recesses 1b and 2b provided in the insulating base 1 and the lid 2 are formed in a part of the insulating base 1 and the lid 2, the mechanical strength of the insulating base 1 and the lid 2 is significantly reduced. There is nothing to do. Therefore, even if an external force is applied to the insulating base body 1 or the lid body 2, the insulating base body 1 or the lid body 2 is not easily damaged by the external force, and this also prevents the container made up of the insulating base body 1 and the lid body 2 from being damaged. The reliability of hermetic sealing is improved, and the semiconductor element 3 housed inside can be operated normally and stably for a long period of time.

The recesses 1b and 2b provided in the insulating base 1 and the lid 2 are formed by press molding raw material powder such as alumina, and when the insulating base 1 and the lid 2 are obtained, a protrusion is previously formed on a press die. By providing the insulating base 1 and the lid
It is formed in a predetermined shape at a predetermined position of 2.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.

[0025]

According to the present invention, an external lead terminal is sandwiched between an insulating base and a lid, and the insulating base, the lid and the external lead terminal are joined together by a glass member for sealing to form a semiconductor element inside. A package for housing a semiconductor element that is hermetically housed, wherein a recess is provided in the main surfaces of the insulating base body and the lid body facing each other and in the region where the external lead terminals are in contact with each other. When the external lead terminal is sandwiched between and the insulating substrate, the lid, and the external lead terminal are joined by a low melting point glass layer for sealing, the thickness of the low melting point glass layer for sealing is reduced in order to reduce the thickness of the entire package. Even if it is made thin, the amount of the low melting glass for sealing arranged between the external lead terminal and the insulating base and the lid is large, and thus the reliability of the hermetic sealing of the container composed of the insulating base and the lid. Drastically improved and accommodated inside the container Normal conductive elements for a long period of time, it is possible to stably operate.

[Brief description of drawings]

FIG. 1 is a vertical cross-sectional view showing an embodiment of a package for housing a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of the package shown in FIG. 1 viewed from the external lead terminal side.

FIG. 3 is a cross-sectional view of a conventional semiconductor element housing package.

FIG. 4 is a cross-sectional view of the package shown in FIG. 3 viewed from the external lead terminal side.

[Explanation of symbols]

 1 ... Insulating base 1b ... Recess provided in insulating base 2 ... Lid 2b ... Recess provided in lid 3 ... ... Semiconductor elements 4, 5 ... Low melting glass layer for sealing 6 ... External lead terminals

Claims (1)

[Claims] 1. An external lead terminal is sandwiched between an insulating base and a lid, and the insulating base, the lid and the external lead terminal are joined together by a glass member for sealing to hermetically house a semiconductor element therein. A package for storing a semiconductor element, characterized in that a recess is provided on the main surfaces of the insulating base body and the lid body facing each other and in a region where the external lead terminals are in contact with each other.