JPH04196566A - Package for containing semiconductor element - Google Patents

Abstract

PURPOSE:To stably operate a semiconductor element to be contained without erroneous operation for a long period by providing on the upper surface of an insulating base a metallized metal layer, and securing an external lead terminal onto the layer through a special glass member. CONSTITUTION:An external lead terminal 5 is secured onto an insulating base 1 covered on its upper part with a metallized metal layer 4, a glass member 6 secures the terminal 5 onto the base 1 and is operated as a dielectric material of a capacity element A. The member 6 is formed of glass containing 5.0 to 50.0wt.% of perovskite type titanate as filler in 60.0 to 90.0wt.% of lead oxide, 5.0-15.0wt.% of boron oxide, and the permittivity of the glass is as high as 35.0 (1MHz at the ambient temperature). Since the member 6 has extremely high permittivity of 35.0, the electrostatic capacitance of a capacity element A to be formed between the layer 4 and the terminal 5 is extremely large, thereby effectively preventing adverse influence to a semiconductor element caused by the variation in power supply voltage by the element A.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package for accommodating a semiconductor element.

(Prior art and its problems) Conventionally, packages for accommodating semiconductor elements, especially glass-sealed packages for accommodating semiconductor elements that are sealed by glass welding, are made of electrically insulating materials such as alumina ceramics, and have a central part. It has a recess for forming a cavity for accommodating the semiconductor element, and is also made of an electrically insulating material, and has an insulating base on which a glass layer for sealing is applied on the upper surface,
It has a concave part in the center to form a cavity for accommodating the semiconductor element, a lid body with a sealing glass layer adhered to the bottom surface, and a lid body that connects the semiconductor element housed inside to an external electric circuit. The external lead terminal is made by placing the external lead terminal on the top surface of the insulating base and melting the glass layer for sealing that has been applied in advance. Temporarily fix it to the insulating base,
Next, a semiconductor element is attached to the recessed part of the insulating base, and each electrode (signal electrode, power supply electrode, ground electrode, etc.) of the semiconductor element is connected to an external lead terminal via a bonding wire. By melting and integrating the sealing glass layer that has been applied to the opposite main surfaces of the insulating base and the lid, the container consisting of the insulating base and the lid is hermetically sealed, resulting in a final product. semiconductor device.

In addition, in order to prevent the semiconductor elements housed inside from being affected by fluctuations in the supply voltage, such conventional semiconductor element storage packages usually have a capacitive element added to them. The addition of a capacitive element is generally done by arranging a multilayer electrode inside the insulating base that constitutes the container.
This is done by forming a constant capacitance between multilayer electrodes (by using an insulating base material as a dielectric material, or by attaching a capacitive element made of barium titanate porcelain to the bottom of a recess that accommodates a semiconductor element in an insulating base). It is being said.

However, in this conventional semiconductor device storage package, when the capacitive element is added by arranging a multilayer electrode inside the insulating base that constitutes the container, the insulating base is generally made of alumina ceramics, and the alumina Ceramics have a low dielectric constant (dielectric constant 9-10
) Therefore, the capacitance formed between the multilayer electrodes is also extremely small, and as a result, there is a drawback that malfunctions caused by fluctuations in the power supply voltage of semiconductor devices cannot be completely prevented.

In addition, in order to eliminate this drawback, it may be possible to increase the number of layers of the multilayer electrode or the area where the electrodes face each other, increasing the capacitance formed between the multilayer electrodes, or increasing the number of electrodes or the area of the electrodes. This increases the size of the package itself, and when a semiconductor element is housed inside to form a semiconductor device, the semiconductor device becomes extremely large.

Furthermore, when a capacitive element is added to a semiconductor element storage package by attaching a capacitive element made of barium titanate porcelain in the recess that accommodates the semiconductor element in the insulating base, the recess that accommodates the semiconductor element in the insulating base may be made of titanium porcelain. The size is increased due to the attachment of the capacitive element made of barium oxide porcelain, and as a result, as mentioned above, the semiconductor device as a product becomes large.

Furthermore, it is conceivable to leave the external shape of the insulating base as is and make only the shape of the recess that accommodates the semiconductor element large enough to accommodate a capacitive element, but if only the shape of the recess is enlarged, the insulating base and the lid will be separated. When the inside of the container is hermetically sealed by joining them, the bonding area between the insulating base and the lid becomes narrow, resulting in a drawback that the reliability of hermetically sealing the container is greatly reduced.

(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its object is to provide a small package for storing semiconductor elements that can stably operate the semiconductor elements housed inside for a long period of time without malfunctioning. Our goal is to provide the following.

(Means for Solving the Problems) The present invention provides a semiconductor element storage package comprising an insulating base having a recess for accommodating a semiconductor element, and a lid, wherein the insulating base has a metallized metal layer on its upper surface. On the metallized metal layer, external lead terminals are coated with 60.0 to 90.0% by weight of lead oxide and 5.0% by weight of boron oxide.
15.0% by weight and 5.0% to 50.0% by weight of perovskite titanate as a filler. A terminal connected to a ground electrode is electrically connected to the metallized metal layer.

(Example) Next, the present invention will be described in detail based on an example shown in the accompanying drawings.

FIG. 1 is a cross-sectional view showing one embodiment of the package for storing semiconductor elements of the present invention, in which 1 is an insulating base made of an electrically insulating material such as alumina ceramics, and 2 is the same (a lid made of an electrically insulating material). The insulating base 1 and the lid 2 constitute a container for accommodating the semiconductor element 3.

The insulating base 1 and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating the semiconductor element 3, and the semiconductor element 3 is placed on the bottom surface of the recess 1a of the insulating base 1 with an adhesive. It is attached and fixed through.

The insulating base 1 and the lid 2 are formed by employing a conventionally well-known press molding method. For example, when the insulating base 1 and the lid 2 are made of alumina ceramics, the insulating base 1 or the lid 2 as shown in FIG. It is manufactured by filling a press mold having a shape corresponding to the lid body 2 with alumina ceramic powder, molding it by applying a constant pressure, and then firing the molded product at a temperature of about 1500'C. .

Further, the insulating substrate 1 has a metallized metal layer 4 deposited on its upper surface, and an external lead terminal 5 is fixed to the upper part of the metallized metal layer 4 via a glass member 6. A capacitive element A using a glass member 6 as a dielectric material is formed between the terminal 5 and the terminal 5 . This capacitive element A is connected between the power supply electrode and the ground electrode of the semiconductor element 3, and acts to prevent the semiconductor element 3 from being adversely affected by fluctuations in the supply voltage.

Metallized metal layer 4 deposited on the upper surface of the insulating substrate l
is made of metal materials such as gold (Au), silver-platinum (Ag-Pt), silver-palladium (Ag-Pd), etc., and is a metal paste obtained by adding and mixing a suitable organic solvent and solvent to gold powder etc. is applied by printing on the upper surface of the insulating substrate 1 by employing a conventionally well-known screen printing method, and then approximately 4
It is deposited by firing at a temperature of 50° C. and baking gold powder or the like onto the upper surface of the insulating substrate l.

The metallized metal layer 4 acts as one electrode of the capacitive element A that smoothes fluctuations in the power supply voltage supplied to the semiconductor element 3 and effectively prevents malfunctions of the semiconductor element 3. The power supply electrode or the ground electrode of the element 3 is electrically connected.

An external lead terminal 5 is also fixed to the upper part of the insulating base l on which the metallized metal layer 4 is adhered via a glass member 6, and the glass member 6 fixes the external lead terminal 5 on the insulating base 1. At the same time, it acts as a dielectric material of the capacitive element A.

The glass member 6 contains 60.0 to 90.0% by weight of lead oxide.
, 5.0 to 15.0% by weight of boron oxide, and 5.0 to 50% of perovskite titanate as a filler.
It is made of glass containing 0% by weight, and the dielectric constant of the glass is as high as 35.0 (room temperature IMHz).

Since the glass member 6 has an extremely high dielectric constant of 35.0, the capacitance value of the capacitive element A formed between the metallized metal layer 4 and the external lead terminal 6 is extremely large, and as a result, The capacitive element A can effectively prevent adverse effects on the semiconductor element due to fluctuations in the supply voltage, and the semiconductor element housed inside can operate stably without malfunctioning.

Note that if the content of lead oxide in the glass member 6 is less than 60.0% by weight, the heating and melting temperature of the glass member 6 will be high, and the glass member 6 will be attached to the insulating base 1, and the insulating base 1 will not be exposed to the outside. The workability of fixing the lead terminal 5 through the glass member 6 will be poor, and if it exceeds 90.0% by weight, the coefficient of thermal expansion of the glass member 6 will not match the insulating base l, and the glass member 6 will be firmly attached to the insulating base 1. It becomes difficult to coat the surface. Therefore, the content of lead oxide is specified in the range of 60.0 to 90.0% by weight.

Further, if the content of boron oxide is less than 5.0% by weight, it becomes difficult to vitrify the glass member 6, and the external lead terminal 5
If it exceeds 15.0% by weight, the heating and melting temperature of the glass member 6 will become high, and the glass member 6 will not adhere to the insulating base 1, and the insulating base l However, the workability of fixing the external lead terminal 5 through the glass member 6 becomes poor. Therefore, the content of boron oxide is specified in the range of 5.0 to 15.0% by weight.

Furthermore, the perovskite type titanate contained as a filler, for example, zircon or lead titanate, is used, and if the content is less than 5.0% by weight, the dielectric constant of the glass member 6 will be low, and the external lead It becomes impossible to form a capacitive element A with a large capacitance value between the terminal 5 and the metallized metal layer 4, and if it exceeds 50.0% by weight, the thermal expansion coefficient of the glass member 6 will match that of the insulating base 1. This makes it difficult to firmly adhere the glass member 6 to the insulating substrate l. Therefore, the content of perovskite titanate is specified to be in the range of 5.0 to 50.0% by weight.

The glass member 6 is made of lead oxide, boron oxide, titanium oxide,
A glass paste obtained by adding and mixing a suitable organic solvent and a solvent to zirconium oxide powder is printed and coated on the upper surface of the insulating substrate l by a conventionally well-known screen printing method, and then,
By baking this at a temperature of about 500°C, it is applied to the upper surface of the insulating substrate l.

If the thickness of the glass member 6 is less than 0.05 mm, there is a risk that the external lead terminal 5 cannot be firmly fixed to the insulating base 1, and if the thickness exceeds 0.5 mm, the external lead terminal 5 and the metallized metal layer 4 may be damaged. There is a risk that the electrostatic capacitance value of the capacitive element A formed between the capacitive element A and the capacitive element A becomes small, and the influence of power supply voltage fluctuations on the semiconductor element 3 cannot be effectively prevented. Therefore, the thickness of the glass member 6 is 0.0
It is preferable to keep the thickness in the range of 5 to 0.5 mm.

Further, the external lead terminal 5 fixed to the upper part of the insulating base 1 via the glass member 6 is made of, for example, Kovar metal (Fe).
-Ni-Co alloy) and 42Alloy (Fe-Ni alloy), etc., and the Kovar metal ingot (
The block is formed into a predetermined plate shape by employing conventionally known rolling and punching methods.

The external lead terminal 5 functions to connect the signal electrode, power supply electrode, and ground electrode of the semiconductor element 3 housed inside to an external electric circuit, and has one end connected to each electrode of the semiconductor element 3 via a bonding wire 7. By connecting the external lead terminals 5 to the external electrical circuit, the semiconductor element 3 is connected to the external electrical circuit.

Note that the external lead terminal 5 may be coated with a layer of a highly conductive and corrosion-resistant metal such as nickel or gold to a thickness of 2.0 to 20.0 μm on its outer surface. Oxidation corrosion of the lead terminals 5 can be effectively prevented, and electrical connection between the external lead terminals 5 and an external electric circuit can be made good. Therefore, it is preferable that the outer surface of the external lead terminal 5 is coated with nickel, gold, etc. to a thickness of 2.0 to 20.0 μm.

The external lead terminal 5 also acts as one electrode of a capacitive element A that smoothes fluctuations in the power supply voltage supplied to the semiconductor element 3 and effectively prevents malfunction of the semiconductor element 3.
Among the external lead terminals 5, a terminal 5a connected to the power supply electrode or the ground electrode of the semiconductor element 3 is electrically connected to the metallized metal layer 4 deposited on the upper surface of the insulating substrate 1 via a bonding wire 7a, Thereby, the capacitive element A formed between the external lead terminal 5 and the metallized metal layer 4 is electrically connected between the power supply electrode and the ground electrode of the semiconductor element 3.

The capacitive element A connected between the power supply electrode and the ground electrode of the semiconductor element 3 includes an external lead terminal 5 and a glass member 6 having a high dielectric constant on the top of an insulating base l on which a metallized metal layer 4 is deposited. Since the recess 1a of the insulating substrate 1 to which the semiconductor element 3 is attached does not have to be particularly large in size to accommodate the capacitive element A, since it is formed by fixing the semiconductor element 3 through the insulating substrate 1.

Therefore, when forming a semiconductor device by bonding the insulating base 1 and the lid 2 and hermetically sealing the container, which will be described later, the insulating base 1 and the lid 2 can reduce the bonding area between them without increasing their external shape. As a result, the hermetic sealing of the container can be made highly reliable, and the shape of the semiconductor device can also be made smaller.

Further, since the capacitive element A connected between the power supply electrode and the ground electrode of the semiconductor element 3 has a large capacitance value, it is possible to effectively prevent the influence on the semiconductor element 3 caused by fluctuations in the supply voltage. This allows the semiconductor element 3 to operate stably without being affected by fluctuations in the supply voltage.

The insulating base 1 to which the external lead terminals 5 are fixed also has a lid 2 bonded to its upper surface via a glass material 6a, thereby allowing a semiconductor element to be placed inside the container consisting of the insulating base 1 and the lid 2. 3.Hermetically sealed.

The glass material 6a for joining the lid 2 to the insulating base 1 is made of a glass material with a low melting point, and the glass material 6a is previously attached to the lower surface of the lid 2.

The glass material 6a contains 50.0 to 80.0% by weight of lead oxide, 5.0 to 15.0% by weight of boron oxide, 15.0% by weight or less of zinc oxide, 100% by weight or less of silicon oxide,
A glass paste made of glass containing 10.0% by weight or less of aluminum oxide and obtained by adding and mixing an appropriate organic solvent or solvent to each of the glass raw material powders is printed on the lower surface of the lid body 2 by a conventionally well-known screen printing method. It is coated on the lower surface of the lid body 2 by coating and baking it at a temperature of about 400°C.

Thus, according to this semiconductor element storage package, the semiconductor element 3 is attached to the bottom surface of the recess 1a of the insulating body 1, and each electrode of the semiconductor element 3 is connected to the external lead terminal 4 by the bonding wire 7.
The external lead terminal 5a to which the power supply electrode or the ground electrode is connected is connected to the metallized metal layer 4 deposited on the upper surface of the insulating base 1 via the bonding wire 7a, and then the insulating base 1 and the lid 2 are connected to each other. By heating and melting the glass material 6a previously attached to the lower surface of the lid body 2 and joining them, the semiconductor element 3 is hermetically sealed inside, thereby completing the semiconductor device as a final product.

(Effects of the Invention) As described above, according to the semiconductor element storage package of the present invention, a metallized metal layer is deposited on the upper surface of an insulating base, and an external lead terminal is further provided on the upper surface with a dielectric constant of 35.0. Lead oxide 60.0 to 90.0% by weight, boron oxide 5.0
to 15.0% by weight and a glass member containing 5.0 to 50.0% by weight of perovskite titanate as a filler. Since the terminal to which the ground electrode is connected is electrically connected to the metallized metal layer, a capacitive element having a large capacitance can be formed between the metallized metal layer and the external lead terminal, and as a result, The capacitive element effectively prevents adverse effects on the semiconductor element due to fluctuations in the supply voltage, and allows the semiconductor element to operate normally and stably for a long period of time.

Furthermore, since the capacitive element is formed by fixing an external lead terminal to the upper part of an insulating base covered with a metallized metal layer via a glass member having a dielectric constant of 35.0, the semiconductor element on the insulating base is attached. There is no need to make the size of the recess particularly large in order to attach the capacitive element. Therefore, when forming a semiconductor device by bonding the insulating base and the lid and hermetically sealing the container, the bonding area between the insulating base and the lid can be increased without increasing the external shape. As a result, the reliability of the hermetic sealing of the container can be made high, and the semiconductor device can also be made smaller.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing an embodiment of the semiconductor element storage package of the present invention. l...Insulating base 2...Lid 4...Metalized metal layer 5...External lead terminal 6...Glass member 6a...Glass material

Claims (1)

[Claims] A semiconductor device storage package comprising an insulating base having a recess for accommodating a semiconductor device and a lid,
A metallized metal layer is deposited on the upper surface of the insulating substrate, and external lead terminals are formed on the upper surface of the insulating substrate by 60.0 to 90.0% by weight of lead oxide and 5.0 to 15.0% by weight of boron oxide.
In addition, perovskite titanate as a filler was added to
．． The metallized metal layer is fixed through a glass member containing 0 to 50.0% by weight, and a terminal of the external lead terminal that is connected to a power supply electrode or a ground electrode of the semiconductor element is electrically connected to the metallized metal layer. A semiconductor device storage package characterized by: