JPH04196577A - Package for containing semiconductor element - Google Patents

Abstract

PURPOSE:To stably operate a semiconductor element by covering an insulating base on its upper surface with a metallized metal layer, securing an external lead terminal to the upper part through a special glass member and electrically connecting the terminal to the metal layer. CONSTITUTION:An insulating base 1 is covered on its upper surface with a metallized metal layer 4, an external lead terminal 5 is secured to the upper part of the layer 4 through a glass member 6, and a capacity element A having an outer member 6 used as a dielectric material between the layer 4 and the terminal 5 is formed. The member 6 is formed of glass containing 50.0 to 80.0wt.% of boron oxide, 5.0 to 15.0wt.% of zinc oxide, and 5.0 to 15.0wt.% of silicon oxide, and the permittivity of the glass is highly 19.0 (1MHz at the ambient temperature). The electrostatic capacity value of the element A is extremely high to effectively prevent adverse influence.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package for accommodating a semiconductor element.

(Prior Art) Conventionally, packages for accommodating semiconductor elements, especially glass-sealed packages for accommodating semiconductor elements that are sealed by glass welding, are made of electrically insulating materials such as alumina ceramics, and have semiconductor elements in the center. It has a recess for forming a cavity for accommodating the element, and is made of an electrically insulating material as well as an insulating substrate having a glass layer for sealing on the upper surface,
The lid body has a concave part in the center to form a cavity for accommodating the semiconductor element, and a glass layer for sealing is adhered to the lower surface. The external lead terminal is made by placing the external lead terminal on the top surface of the insulating base and melting the glass layer for sealing that has been applied in advance. Temporarily fix it to the insulating base,
Next, a semiconductor element is attached to the recessed part of the insulating base, and each electrode (signal electrode, power supply electrode, ground electrode, etc.) of the semiconductor element is connected to an external terminal via a bonding wire. , by melting and integrating the sealing glass layer that has been attached to the opposing main surfaces of the insulating base and the lid, and hermetically sealing the container consisting of the insulating base and the lid. The final product is a semiconductor device.

Incidentally, in order to prevent the semiconductor elements housed inside from being affected by fluctuations in the supply voltage, such conventional semiconductor element housing packages usually have a capacitive element added to them. The addition of a capacitive element is generally done by arranging a multilayer electrode inside the insulating base that constitutes the container.
This is done by forming a certain capacitance between the multilayer electrodes using the insulating base material as a dielectric, or by attaching a capacitive element made of barium titanate porcelain to the bottom of the recess that accommodates the semiconductor element in the insulating base. ing.

(Problem to be Solved by the Invention) However, in this conventional semiconductor device storage package, when the capacitive element is added by arranging a multilayer electrode inside the insulating base that constitutes the container, the insulating base are generally made of alumina ceramics, which have a low dielectric constant (dielectric constant of 9 to 10).
) Therefore, the capacitance formed between the multilayer electrodes is also extremely small, and as a result, there is a drawback that malfunctions caused by fluctuations in the power supply voltage of semiconductor devices cannot be completely prevented.

In addition, in order to eliminate this drawback, it is possible to increase the number of layers of the multilayer electrode and the area where the electrodes face each other, increasing the capacitance formed between the multilayer electrodes, or by increasing the number of layers and area of the electrodes. This increases the size of the package itself, and when a semiconductor element is housed inside to form a semiconductor device, the semiconductor device becomes extremely large.

Furthermore, when a capacitive element is added to a package for storing a semiconductor element by attaching a capacitive element made of barium titanate porcelain in the recess for accommodating the semiconductor element in the insulating base, the recess for accommodating the semiconductor element in the insulating base is made of titanium. Because the capacitive element made of oxybarium porcelain is attached, the capacitor becomes thick, and as a result, as mentioned above, the semiconductor device as a product becomes larger.

Furthermore, it is conceivable to leave the external shape of the insulating base as is and make only the shape of the recess that accommodates the semiconductor element large enough to accommodate the capacitive element, but if only the shape of the recess is enlarged, the insulating base and the lid will be When the inside of the container is hermetically sealed by joining them, the bonding area between the insulating base and the lid becomes narrow, resulting in a drawback that the reliability of hermetically sealing the container is greatly reduced.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and its purpose is to create a small package for storing semiconductor elements that can stably operate the semiconductor elements housed inside for a long period of time without malfunctioning. Our goal is to provide the following.

(Means for Solving the Problems) The present invention provides a semiconductor element storage package comprising an insulating base having a recess for accommodating a semiconductor element and a lid, in which the insulating base has a metallized metal layer coated on its upper surface. and an external lead terminal or lead oxide 50.
0 to 80.0% by weight, zirconium oxide 4.0 to 1
5.0% by weight, boron oxide 5°0 to 15.0% by weight,
Zinc oxide 5.0 to 15.0% by weight, silicon oxide 5°0
It is fixed through a glass member containing 15.0% by weight, and that the terminal connected to the power supply electrode or the ground electrode of the semiconductor element among the external lead terminals is electrically connected to the metallized metal layer. This is a characteristic feature.

(Example) Next, the present invention will be described in detail based on an example shown in the accompanying drawings.

FIG. 1 is a cross-sectional view showing one embodiment of the semiconductor element storage package of the present invention, in which 1 is an insulating base made of an electrically insulating material such as alumina ceramics, and 2 is a lid body also made of an electrically insulating material. The insulating base 1 and the lid 2 constitute a container for accommodating the semiconductor element 3.

The insulating base 1 and the lid 2 are each provided with a recess in the center thereof to form a cavity for accommodating the semiconductor element 3, and the bottom surface of the recess 1a of the insulating base 1 is provided with an adhesive material for the semiconductor element 3. It is attached and fixed through.

The insulating base 1 and the lid 2 are formed by employing a conventionally well-known press molding method. For example, when the insulating base 1 and the lid 2 are made of alumina ceramics, the insulating base 1 or the lid 2 as shown in FIG. It is manufactured by filling a press mold having a shape corresponding to the lid body 2 with alumina ceramic powder, molding it by applying a constant pressure, and then firing the molded product at a temperature of about 1500°C. .

Further, the insulating substrate 1 has a metallized metal layer 4 deposited on its upper surface, and an external lead terminal 5 is fixed to the upper part of the metallized metal layer 4 via a glass member 6. A capacitive element A using a glass member 6 as a dielectric material is formed between the terminal 5 and the terminal 5 . This capacitive element A is connected between the power supply electrode and the ground electrode of the semiconductor element 3, and acts to prevent the semiconductor element 3 from being adversely affected by fluctuations in the supply voltage.

Metallized metal layer 4 deposited on the upper surface of the insulating substrate 1
is made of metal materials such as gold (Au), silver-platinum (Ag-Pt), and silver-palladium (Ag-Pd), and is a metal obtained by adding and mixing appropriate organic solvents and solvents to gold powder etc. The paste is applied by printing on the upper surface of the insulating substrate 1 by employing a conventionally well-known screen printing method, and then the paste
It is deposited by firing at a temperature of 0° C. and baking gold powder or the like onto the upper surface of the insulating substrate l.

The metallized metal layer 4 acts as one electrode of the capacitive element A that smoothes fluctuations in the power supply voltage supplied to the semiconductor element 3 and effectively prevents malfunctions of the semiconductor element 3. A power supply electrode or a ground electrode of the element 3 is electrically connected.

An external lead terminal 5 is also fixed to the upper part of the insulating base l on which the metallized metal layer 4 is adhered via a glass member 6, and the glass member 6 fixes the external lead terminal 5 on the insulating base 1. At the same time, it acts as a dielectric material of the capacitive element A.

The glass member 6 contains 50.0 to 80.0% by weight of lead oxide.
, 4.0 to 15.0% by weight of zirconium oxide, 5.0 to 15.0% by weight of boron oxide, 5.0 to 1% by weight of zinc oxide
The dielectric constant of the glass is as high as 19.0 (room temperature IMHz).

Since the glass member 6 has a high dielectric constant of 19.0, the capacitance value of the capacitive element A formed between the metallized metal layer 4 and the external lead terminal 6 becomes extremely large, and as a result, the capacitance increases. Element A can effectively prevent adverse effects on the semiconductor elements due to fluctuations in the supply voltage, and can stably operate the semiconductor elements housed inside without malfunctioning.

Note that if the content of lead oxide in the glass member 6 is less than 50.0% by weight, the heating and melting temperature of the glass member 6 will be high, and the glass member 6 will be attached to the insulating base 1, and the external lead will be attached to the insulating base 1. The workability of fixing the terminal 5 via the glass member 6 becomes poor, and if the amount exceeds 80.0% by weight, the thermal expansion coefficient of the glass member 6 will not match that of the insulating base l, making it difficult to firmly attach the glass member 6 to the insulating base l. It becomes difficult to apply it.

Therefore, the content of lead oxide is 50.0 to 80.0% by weight.
specified within the range.

Furthermore, if the content of zirconium oxide is less than 4.0% by weight, the coefficient of thermal expansion of the glass member 6 will not match that of the insulating base l, making it difficult to firmly adhere the glass member 6 to the insulating base l; If it exceeds .0% by weight, the heating and melting temperature of the glass member 6 will be high and the workability of attaching the glass member 6 to the insulating base 1 and fixing the external lead terminal 5 to the insulating base 1 via the glass member 6 will be poor. Become. Therefore, the content of zirconium oxide is specified in the range of 4.0 to 15.0% by weight.

Furthermore, if the content of boron oxide is less than 5.0% by weight, the coefficient of thermal expansion of the glass member 6 will not match that of the insulating base 1, making it difficult to firmly adhere the glass member 6 to the insulating base 1. If it exceeds .0% by weight, the heating and melting temperature of the glass member 6 becomes high, and the glass member 6 is attached to the insulating base 1, and the external lead terminal 5 is attached to the insulating base 1.
The workability of fixing through the screws becomes poor. Therefore, the content of boron oxide is specified in the range of 5.0 to 15.0% by weight.

Furthermore, if the content of zinc oxide is less than 5.0% by weight, the strength of the glass member 6 will deteriorate and the reliability of hermetic sealing will be greatly reduced, and if it exceeds 15.0% by weight, the glass member 6 will be reduced in strength. The heating and melting temperature of the insulating base 1 becomes high, and the workability of attaching the glass member 6 to the insulating base 1 and fixing the external lead terminal 5 to the insulating base 1 via the glass member 6 becomes worse. Therefore,
The content of zinc oxide is specified in the range of 5.0 to 15.0% by weight.

Furthermore, if the content of silicon oxide is less than 5.0% by weight, the coefficient of thermal expansion of the glass member 6 will not match that of the insulating base 1, making it difficult to firmly adhere the glass member 6 to the insulating base 1, and If the amount exceeds 15.0% by weight, the heating and melting temperature of the glass member 6 will increase, causing the glass member 6 to
Moreover, the workability of fixing the external lead terminals 5 to the insulating substrate 1 via the glass member 6 becomes worse. Therefore, the content of silicon oxide is specified in the range of 5.0 to 15.0% by weight.

The glass member 6 is made of lead oxide, boron oxide, titanium oxide,
A glass paste obtained by adding and mixing a suitable organic solvent and a solvent to zirconium oxide powder is printed and coated on the upper surface of the insulating substrate 1 by a conventionally well-known screen printing method, and then,
By baking this at a temperature of approximately 500°C, it is adhered to the upper surface of the insulating substrate 1.

The thickness of the glass member 6 is 0. If the thickness is less than 5 nm, there is a risk that the external lead terminal 5 cannot be firmly fixed to the insulating substrate 1, and if it exceeds 0.5 mm, the capacitive element A formed between the external lead terminal 5 and the metallized metal layer 4 may be damaged. There is a risk that the capacitance value of the semiconductor element 3 becomes so small that the influence of power supply voltage fluctuations on the semiconductor element 3 cannot be effectively prevented. Therefore, the glass member 6 has a thickness of 0.
．． It is preferable to keep the thickness in the range of 0.05 to 0.5 mm.

Further, the external lead terminal 5 fixed to the upper part of the insulating base 1 via the glass member 6 is made of, for example, Kovar metal (Fe).
-Ni-Co alloy) and 42A11oy (Fe-Ni alloy), etc., and the Kovar metal ingot (
The block is formed into a predetermined plate shape by employing conventionally known rolling and punching methods.

The external lead terminal 5 functions to connect the signal electrode, power supply electrode, and ground electrode of the semiconductor element 3 housed inside to an external electric circuit, and has one end connected to each electrode of the semiconductor element 3 via a bonding wire 7. By connecting the external lead terminals 5 to the external electrical circuit, the semiconductor element 3 is connected to the external electrical circuit.

Note that the external lead terminal 5 may be coated with a layer of a highly conductive and corrosion-resistant metal such as nickel or gold to a thickness of 2.0 to 20.0 μm on its outer surface. Oxidation corrosion of the lead terminals 5 can be effectively prevented, and a good electrical connection between the external lead terminals 5 and an external electric circuit can be achieved. Therefore, it is preferable that the outer surface of the external lead terminal 5 is coated with nickel, gold, etc. to a thickness of 2.0 to 20.0 μm.

The external lead terminal 5 also acts as one electrode for a capacitive element that smoothes fluctuations in the power supply voltage supplied to the semiconductor element 3 and effectively prevents malfunction of the semiconductor element 3.
Among the external lead terminals 5, a terminal 5a connected to the power supply electrode or the ground electrode of the semiconductor element 3 is electrically connected to the metallized metal layer 4 deposited on the upper surface of the insulating substrate 1 via a bonding wire 7a, Thereby, the capacitive element A formed between the external lead terminal 5 and the metallized metal layer 4 is electrically connected between the power supply electrode and the ground electrode of the semiconductor element 3.

The capacitive element A connected between the power supply electrode and the ground electrode of the semiconductor element 3 includes an external lead terminal 5 and a high dielectric constant glass member 6 on the upper part of the insulating base 1 on which the metallized metal layer 4 is deposited. Since it is formed by fixing the capacitive element A, there is no need to make the recess 1a of the insulating base l to which the semiconductor element 3 is attached particularly large in order to attach the capacitive element A.

Therefore, when forming a semiconductor device by bonding an insulating base I and a lid 2, which will be described later, and hermetically sealing the container, the insulating base I and the lid 2 can reduce the bonding area between them without increasing their external shape. As a result, the hermetic sealing of the container can be made highly reliable, and the shape of the semiconductor device can also be made smaller.

Further, since the capacitive element A connected between the power supply electrode and the ground electrode of the semiconductor element 3 has a large capacitance value, it is possible to effectively prevent the influence on the semiconductor element 3 caused by fluctuations in the supply voltage. This allows the semiconductor element 3 to operate stably without being affected by fluctuations in the supply voltage.

The insulating base 1 to which the external lead terminals 5 are fixed also has a lid 2 bonded to its upper surface via a glass material 6a, so that a semiconductor element is placed inside the container consisting of the insulating base 1 and the lid 2. 3 is hermetically sealed.

The glass material 6a for joining the lid 2 to the insulating base 1 is made of a glass material with a low melting point, and the glass material 6a is previously attached to the lower surface of the lid 2.

The glass material 6a contains 50.0 to 80.0% by weight of lead oxide, 5.0 to 15.0% by weight of boron oxide, 15.0% by weight or less of zinc oxide, 10.0% by weight or less of silicon oxide,
A glass paste made of glass containing 10.0% by weight or less of aluminum oxide and obtained by adding and mixing an appropriate organic solvent or solvent to each of the glass raw material powders is printed on the lower surface of the lid body 2 by a conventionally well-known screen printing method. It is coated on the lower surface of the lid body 2 by coating and baking it at a temperature of about 400°C.

Thus, according to this semiconductor element storage package, the semiconductor element 3 is attached to the bottom surface of the recess 1a of the insulating substrate l, and each electrode of the semiconductor element 3 is connected to the external lead terminal 4 by the bonding wire 7.
The external lead terminal 5a connected to the power supply electrode or the ground electrode is connected to the metallized metal layer 4 deposited on the upper surface of the insulating base 1 via the bonding wire 7a, and then the insulating base 1 and the lid 2 are connected to each other. The semiconductor element 3 is hermetically sealed inside by heating and melting the glass material 6a previously attached to the lower surface of the lid body 2 and joining them, thereby completing the semiconductor device as a final product.

(Effect of the invention) As described above, the putty for storing semiconductor elements of the present invention, -
According to George, a metallized metal layer is deposited on the upper surface of an insulating substrate, and an external lead terminal is further placed on top of the metallized layer with a dielectric constant of 19.0.
Lead oxide 50.0 to 80.0% by weight, zirconium oxide 4.0 to 15.0% by weight, boron oxide 5.0 to 15.0% by weight, zinc oxide 5.0 to 15.0% by weight
, a terminal connected to the power supply electrode or the ground electrode of the semiconductor element among the external lead terminals is electrically fixed to the metallized metal layer through a glass member containing 5.0 to 15.0% by weight of silicon oxide. Because of the connection, a capacitive element with large capacitance can be formed between the metallized metal layer and the external lead terminal, and as a result,
The capacitive element effectively prevents adverse effects on the semiconductor element due to fluctuations in the supply voltage, and allows the semiconductor element to operate normally and stably for a long period of time.

Furthermore, since the capacitive element is formed by fixing an external lead terminal to the upper part of an insulating base covered with a metallized metal layer via a glass member having a dielectric constant of 19.0, the semiconductor element on the insulating base is attached. There is no need to make the size of the recess particularly large in order to attach the capacitive element. Therefore, when forming a semiconductor device by joining the insulating base and the lid and hermetically sealing the container, the bonding area between the insulating base and the lid can be increased without increasing the external shape. As a result, the container can be hermetically sealed with high reliability, and the semiconductor device can also be made smaller.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing one embodiment of a stand can for storing semiconductor elements according to the present invention. ■... Insulating base 2... Lid 4... Metallized metal layer 5... External lead terminal 6... Glass member 6a... Glass material

Claims (1)

[Claims] A semiconductor device storage package comprising an insulating base having a recess for accommodating a semiconductor device and a lid,
A metallized metal layer is deposited on the upper surface of the insulating substrate, and external lead terminals are formed on the upper surface of the insulating substrate with lead oxide of 50.0 to 80.0% by weight and zirconium oxide of 4.0 to 15.0% by weight.
wt%, boron oxide 5.0-15.0 wt%, zinc oxide 5.0-15.0 wt%, silicon oxide 5.0-1
A terminal that is fixed via a glass member containing 5.0% by weight and that is connected to a power supply electrode or a ground electrode of the semiconductor element among the external lead terminals is electrically connected to the metallized metal layer. A package for storing semiconductor elements.