JP2808044B2 - Package for storing semiconductor elements - Google Patents

Description

Description: BACKGROUND OF THE INVENTION The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

(Prior art and its problems) Conventionally, a package for housing a semiconductor element, particularly a glass-sealed semiconductor element housing package for sealing by welding glass, is made of an electrically insulating material such as alumina ceramics. A concave portion for forming a cavity for accommodating the semiconductor element is formed in the portion, an insulating base having a sealing glass layer adhered on the upper surface, and an electrically insulating material, and the semiconductor element is accommodated in the central portion. Having a concave portion for forming a cavity to be formed, a lid having a lower surface covered with a glass layer for sealing, and an external portion for electrically connecting a semiconductor element housed therein to an external electric circuit. The external lead terminals are temporarily mounted on the insulating substrate by placing the external lead terminals on the upper surface of the insulating substrate and melting the sealing glass layer previously applied. Then, a semiconductor element is attached to the concave portion of the insulating base, and each electrode (signal electrode, power supply electrode, ground electrode, etc.) of the semiconductor element is connected to an external lead terminal via a bonding wire. By melting and integrating a sealing glass layer in which the insulating substrate and the lid are adhered to the opposing main surfaces, and hermetically sealing the container comprising the insulating substrate and the lid. It becomes a semiconductor device as a final product.

Such a conventional package for housing a semiconductor element is usually provided with a capacitive element in order to prevent the semiconductor element housed therein from being affected by fluctuations in the power supply voltage. In general, the addition of a capacitor element generally includes disposing a multilayer electrode inside an insulating base constituting a container, forming a constant capacitance between the multilayer electrodes using the insulating base material as a dielectric, and accommodating a semiconductor element of the insulating base. This is performed by attaching a capacitive element made of barium titanate porcelain to the bottom surface of the recess.

However, in this conventional package for accommodating a semiconductor element, when the addition of a capacitive element is performed by arranging a multilayer electrode inside an insulating base constituting a container, the insulating base is generally made of alumina ceramics,
The alumina ceramic has a low dielectric constant (dielectric constant of 9 to 1).
0) Therefore, the capacitance formed between the multilayer electrodes is extremely small, and as a result, there is a disadvantage that a malfunction due to a power supply voltage fluctuation of the semiconductor element cannot be completely prevented.

In order to solve this drawback, it is conceivable to increase the number of layers of the multilayer electrode and the area facing the electrodes to increase the capacitance formed between the multilayer electrodes. As a result, the shape of the package itself becomes large, and a semiconductor element is housed therein, which causes a disadvantage that the semiconductor device becomes extremely large.

Further, when a capacitance element made of barium titanate porcelain is mounted in a concave part for accommodating a semiconductor element of an insulating base, and the capacitance element is added to the package for accommodating a semiconductor element, the concave part for accommodating the semiconductor element of the insulating base is made of titanium. The size is increased due to the attachment of the capacitive element made of barium oxide porcelain, and as a result, as described above, there is a disadvantage that the semiconductor device as a product is enlarged.

Further, it is conceivable that the outer shape of the insulating base is kept as it is and the shape of only the concave portion for accommodating the semiconductor element is made large enough to allow the capacitive element to be attached. When the inside of the container is hermetically sealed by joining the two, the joint area between the insulating base and the lid is reduced, and the reliability of hermetic sealing of the container is greatly reduced.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and an object of the present invention is to provide a small-sized semiconductor element housing package capable of stably operating a semiconductor element housed therein for a long time without malfunction. Is to provide.

(Means for Solving the Problems) The present invention relates to a semiconductor element housing package including a lid and an insulating base having a concave portion for housing a semiconductor element, wherein the insulating base has a metallized metal layer on an upper surface thereof. On the metallized metal layer, external lead terminals are composed of 60.0 to 90.0% by weight of lead oxide and 5.0 to 15.0% of boron oxide.
% Of a perovskite type titanate as a filler is fixed through a glass member containing 5.0 to 50.0% by weight, and a terminal connected to a power supply electrode or a ground electrode of a semiconductor element among the external lead terminals is It is characterized by being electrically connected to the metallized metal layer.

(Example) Next, the present invention will be described in detail based on an example shown in the accompanying drawings.

FIG. 1 is a cross-sectional view showing an embodiment of a package for housing a semiconductor element according to the present invention, wherein 1 is an insulating base made of an electrically insulating material such as alumina ceramics, and 2 is a lid made of the same electrically insulating material. The insulating base 1 and the lid 2 constitute a container for housing the semiconductor element 3.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating the semiconductor element 3 at the center thereof, and the semiconductor element 3 is provided with an adhesive on the bottom surface of the concave portion 1a of the insulating base 1. It is attached and fixed.

The insulating substrate 1 and the lid 2 are formed by employing a conventionally known press molding method. For example, when the insulating substrate 1 and the lid 2 are made of alumina ceramic, the first
A press die having a shape corresponding to the insulating base 1 or the lid 2 as shown in the figure is filled with alumina ceramic powder and molded by applying a constant pressure. Thereafter, the molded product is heated to a temperature of about 1500 ° C. It is manufactured by firing.

The insulating substrate 1 has a metallized metal layer 4 on its upper surface.
The external lead terminal 5 is fixed on the metallized metal layer 4 via a glass member 6, and the glass member 6 is placed between the metallized metal layer 4 and the external lead terminal 5 by a dielectric material. Is formed.
The capacitance element A is connected between the power supply electrode and the ground electrode of the semiconductor element 3 and acts so that the semiconductor element 3 is not adversely affected by the fluctuation of the supply power supply voltage.

The metallized metal layer 4 deposited on the upper surface of the insulating base 1 is made of a metal material such as gold (Au), silver-platinum (Ag-Pt), silver-palladium (Ag-Pd), and is suitable for gold powder or the like. Organic solvent, a metal paste obtained by adding and mixing a solvent, is applied by printing on the upper surface of the insulating substrate 1 by employing a conventionally known screen printing method, and thereafter, the resultant is baked at a temperature of about 450 ° C. It is applied by baking gold powder or the like on the upper surface of the insulating base 1.

The metallized metal layer 4 acts as one electrode of a capacitive element A for smoothing fluctuations in the power supply voltage supplied to the semiconductor element 3 and effectively preventing malfunction of the semiconductor element 3. The power electrode or the ground electrode of the element 3 is electrically connected.

External lead terminals 5 are fixed on the insulating base 1 on which the metallized metal layer 4 is adhered via a glass member 6. The glass members 6 fix the external lead terminals 5 on the insulating base 1. And acts as a dielectric material of the capacitor A.

The glass member 6 is made of glass containing 60.0 to 90.0% by weight of lead oxide, 5.0 to 15.0% by weight of boron oxide, and 5.0 to 50.0% by weight of perovskite type titanate as a filler, and has a dielectric constant of 35.0 ( Room temperature is as high as 1MHz.

Since the glass member 6 has an extremely high dielectric constant of 35.0, the capacitance value of the capacitance element A formed between the metallized metal layer 4 and the external lead terminal 6 becomes an extremely large value. A can effectively prevent the semiconductor device from being adversely affected by the fluctuation of the supply power supply voltage, and can stably operate the semiconductor device housed therein without malfunctioning.

The glass member 6 has a lead oxide content of 60.0% by weight.
When it is less than the above, the heating and melting temperature of the glass member 6 increases,
The workability of attaching the glass member 6 to the insulating base 1 and fixing the external lead terminals 5 to the insulating base 1 via the glass member 6 becomes poor, and if it exceeds 90.0% by weight, the coefficient of thermal expansion of the glass member 6 decreases. The glass member 6 does not match the insulating base 1 and it is difficult to firmly adhere the glass member 6 to the insulating base 1. Therefore, the content of lead oxide is 60.0 to 90.0% by weight.
Specified in the range.

If the content of boron oxide is less than 5.0% by weight, vitrification of the glass member 6 becomes difficult, and the external lead terminals 5
Cannot be firmly fixed on the insulating base 1, and if it exceeds 15.0% by weight, the heating and melting temperature of the glass member 6 increases, so that the glass member 6 is adhered to the insulating base 1, and The workability of fixing the lead terminal 5 via the glass member 6 becomes poor. Therefore, the content of boron oxide is specified in the range of 5.0 to 15.0% by weight.

Further perovskite-type titanate contained as a filler, for example, zircon or lead titanate is used,
If the content is less than 5.0% by weight, the dielectric constant of the glass member 6 becomes low, and it becomes impossible to form the capacitive element A having a large capacitance value between the external lead terminal 5 and the metallized metal layer 4. If it exceeds 50.0% by weight, the coefficient of thermal expansion of the glass member 6 does not match that of the insulating substrate 1, and it becomes difficult to firmly attach the glass member 6 to the insulating substrate 1. Therefore, the content of the perovskite type titanate is specified in the range of 5.0 to 50.0% by weight.

The glass member 6 is obtained by printing and applying a glass paste obtained by adding a suitable organic solvent and a solvent to powders of lead oxide, boron oxide, titanium oxide and zirconium oxide on the upper surface of the insulating substrate 1 by a conventionally known screen printing method. Thereafter, the resultant is baked at a temperature of about 500 ° C. to be adhered to the upper surface of the insulating base 1.

If the thickness of the glass member 6 is less than 0.05 mm, there is a risk that the external lead terminal 5 cannot be firmly fixed to the insulating base 1.
There is a danger that the capacitance value of the capacitance element A formed between the semiconductor element 3 and the metallized metal layer 4 becomes small and the influence of the power supply voltage fluctuation on the semiconductor element 3 cannot be effectively prevented.
Therefore, the glass member 6 has a thickness of 0.05 to 0.5 mm.
Is preferably set in the range.

The external lead terminal 5 fixed to the upper portion of the insulating base 1 via the glass member 6 is made of, for example, Kovar metal (Fe
-Ni-Co alloy) and 42Alloy (Fe-Ni alloy), etc., and the ingot (lumps) of the Kovar metal or the like is formed into a predetermined plate shape by adopting a conventionally known rolling and punching method. It is formed.

The external lead terminal 5 is a semiconductor element 3 housed inside.
Of the semiconductor element 3 is connected to one end of the semiconductor element 3 via a bonding wire 7 to connect the external lead terminal 5 to the external electric circuit. By connecting, the semiconductor element 3 is connected to an external electric circuit.

The external lead terminal 5 has nickel on its outer surface.
If a metal having good conductivity and excellent corrosion resistance made of gold or the like is layered by plating to a thickness of 2.0 to 20.0 μm, oxidation corrosion of the external lead terminal 5 can be effectively prevented and the external lead terminal 5 Good electrical connection with an external electric circuit can be achieved. Therefore, the external lead terminal 5 is formed by plating nickel, gold, or the like on the outer surface with 2.0 to 20.0 μm.
It is preferable that the layer is layered to a thickness of m.

The external lead terminal 5 also functions as one electrode of a capacitive element A for smoothing fluctuations in the power supply voltage supplied to the semiconductor element 3 and effectively preventing malfunction of the semiconductor element 3. Among them, the terminal 5a to which the power supply electrode or the ground electrode of the semiconductor element 3 is connected is electrically connected to the metallized metal layer 4 attached to the upper surface of the insulating substrate 1 via the bonding wire 7a. The capacitance element A formed between the semiconductor element 3 and the metallized metal layer 4 is electrically connected between the power supply electrode and the ground electrode of the semiconductor element 3.

The capacitive element A connected between the power electrode and the ground electrode of the semiconductor element 3 has an external lead terminal 5 on the upper part of the insulating substrate 1 on which the metallized metal layer 4 is adhered, and a high dielectric constant glass member 6. The size of the concave portion 1a for mounting the semiconductor element 3 of the insulating base 1 does not need to be particularly large in order to mount the capacitive element A because it is formed by fixing through the interposition. Therefore, when a semiconductor device is formed by bonding an insulating base 1 and a lid 2 to be described later and hermetically sealing the container, the insulating base 1 and the lid 2 can be bonded to each other without increasing their external shapes. As a result, the reliability of hermetic sealing of the container can be increased, and the size of the semiconductor device can be reduced.

In addition, since the capacitance element A connected between the power supply electrode and the ground electrode of the semiconductor element 3 has a large capacitance value, it is necessary to effectively prevent the semiconductor element 3 from being affected by fluctuations in the supply power supply voltage. Thus, the semiconductor element 3 can operate stably without being affected by the fluctuation of the supply power supply voltage.

The insulating substrate 1 to which the external lead terminals 5 are fixed is also provided with a lid 2 bonded to the upper surface thereof through a glass material 6a, whereby the semiconductor element 3 is hermetically sealed inside a container formed of the insulating substrate 1 and the lid 2. Sealed.

The glass material 6a for joining the lid 2 to the insulating base 1 is made of a low-melting glass material.
Is attached to the lower surface.

The glass material 6a contains 50.0 to 80.0% by weight of lead oxide, 5.0 to 15.0% by weight of boron oxide, 15.0% by weight or less of zinc oxide, 10.0% by weight or less of silicon oxide, and 10.0% by weight of aluminum oxide.
A glass paste containing an appropriate organic solvent and a solvent is added to each glass raw material powder, and a glass paste obtained by mixing is printed on the lower surface of the lid 2 by a conventionally known screen printing method. It is attached to the lower surface of the lid 2 by firing at a temperature of about 400 ° C.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 3 is attached to the bottom surface of the concave portion 1a of the insulating base 1, and each electrode of the semiconductor element 3 is connected to the external lead terminal 4 by the bonding wire 7 and the semiconductor element 3
The external lead terminal 5a to which the power supply electrode or the ground electrode is connected is connected to the metallized metal layer 4 adhered to the upper surface of the insulating base 1 via the bonding wire 7a. The glass material 6a previously applied to the lower surface of the lid 2 is heated and melted and joined to hermetically seal the semiconductor element 3 therein, thereby completing a semiconductor device as a final product.

(Effects of the Invention) As described above, according to the package for housing a semiconductor element of the present invention, a metallized metal layer is deposited on the upper surface of the insulating base,
Further, an external lead terminal is provided on the upper portion with 60.about.90.0% by weight of lead oxide having a dielectric constant of 35.0 and 5.0-15.0% by weight of boron oxide.
Then, a perovskite type titanate as a filler is added to 5.
The metal lead is fixed through a glass member containing 0 to 50.0% by weight, and a terminal of the external lead terminal to which a power supply electrode or a ground electrode of a semiconductor element is connected is electrically connected to the metallized metal layer. A capacitance element having a large capacitance can be formed between the metal layer and the external lead terminal. As a result, the capacitance element effectively prevents a semiconductor element from being adversely affected by a fluctuation in a supply voltage. However, the semiconductor element can be normally and stably operated for a long period of time.

Further, since the capacitor element is formed by fixing an external lead terminal via a glass member having a dielectric constant of 35.0 on the upper portion of the insulating base on which the metallized metal layer is applied, a concave portion for attaching the semiconductor element of the insulating base. Does not need to be particularly large in order to mount the capacitive element. Therefore, when a semiconductor device is formed by joining the insulating base and the lid and hermetically sealing the container, the joining area between the insulating base and the lid can be increased without enlarging the external shape thereof, As a result, the reliability of hermetic sealing of the container can be increased, and the size of the semiconductor device can be reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention. DESCRIPTION OF SYMBOLS 1 ... Insulating base, 2 ... Lid 4 ... Metallized metal layer 5 ... External lead terminal 6 ... Glass member 6a ... Glass material

Continuation of the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 23/10 H01L 23/50

Claims (1)

(57) [Claims] 1. A semiconductor device housing package comprising a cover and an insulating base having a concave portion for housing a semiconductor element, wherein the insulating base has a metallized metal layer adhered on an upper surface thereof, and an outer surface on an upper surface thereof. Lead terminal is lead oxide 6
0.0 to 90.0% by weight, boron oxide 5.0 to 15.0% by weight,
The metal lead metal layer is fixed via a glass member containing 5.0 to 50.0% by weight of a perovskite type titanate as a filler, and a terminal connected to a power supply electrode or a ground electrode of a semiconductor element among the external lead terminals is the metallized metal layer. A semiconductor element storage package electrically connected to the semiconductor device.