JPH0613483A - Semiconductor element housing package - Google Patents
Semiconductor element housing packageInfo
- Publication number
- JPH0613483A JPH0613483A JP4165892A JP16589292A JPH0613483A JP H0613483 A JPH0613483 A JP H0613483A JP 4165892 A JP4165892 A JP 4165892A JP 16589292 A JP16589292 A JP 16589292A JP H0613483 A JPH0613483 A JP H0613483A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- glass
- weight
- oxide
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子を収容する
ための半導体素子収納用パッケージに関し、特にガラス
熔着によってパッケージの封止を行うガラス封止型半導
体素子収納用パッケージの改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element, and more particularly to improvement of a glass-sealed semiconductor element housing package for sealing the package by glass welding. is there.
【０００２】[0002]
【従来の技術】従来、半導体素子、特に半導体集積回路
素子を収容するための半導体素子収納用パッケージは酸
化アルミニウム質焼結体等の電気絶縁材料から成り、中
央部に半導体素子を収容する空所を形成するための凹部
を有し、上面に封止用の低融点ガラスから成るガラス部
材が被着された絶縁基体と、同じく酸化アルミニウム質
焼結体等の電気絶縁材料から成り、中央部に半導体素子
を収容する空所を形成するための凹部を有し、下面に封
止用の低融点ガラスら成るガラス部材が被着された蓋体
と、内部に収容する半導体素子を外部の電気回路に電気
的に接続するための外部リード端子とから構成されてお
り、絶縁基体の上面に外部リード端子を載置させるとと
もに予め被着させておいたガラス部材を溶融させること
によって外部リード端子を絶縁基体に仮止めし、次に前
記絶縁基体の凹部に半導体素子を取着固定するとともに
該半導体素子の各電極をボンディングワイヤを介して外
部リード端子に接続し、しかる後、絶縁基体と蓋体とを
その相対向する各々の主面に被着させておいた封止用の
低融点ガラスから成るガラス部材を溶融一体化させ、絶
縁基体と蓋体とから成る絶縁容器を気密に封止すること
によって製品としての半導体装置となる。2. Description of the Related Art Conventionally, a semiconductor element accommodating package for accommodating a semiconductor element, particularly a semiconductor integrated circuit element, is made of an electrically insulating material such as an aluminum oxide sintered body, and has a space for accommodating the semiconductor element in its central portion. An insulating substrate having a glass member made of a low-melting glass for sealing on the upper surface, and an electrically insulating material such as an aluminum oxide sintered body. A lid body having a recess for forming a cavity for housing a semiconductor element and a glass member made of a low-melting glass for sealing is attached to the lower surface, and an electric circuit for externally housing the semiconductor element to be housed therein. An external lead terminal for electrically connecting to the external lead terminal, and by placing the external lead terminal on the upper surface of the insulating base and melting the glass member previously attached to the external lead terminal. The terminals are temporarily fixed to the insulating substrate, then the semiconductor element is fixedly mounted in the recess of the insulating substrate, and the electrodes of the semiconductor element are connected to the external lead terminals through the bonding wires. A glass member made of a low melting point glass for sealing, which has a lid and a main surface facing each other, is melted and integrated, and an insulating container made of an insulating base and a lid is hermetically sealed. When stopped, it becomes a semiconductor device as a product.
【０００３】尚、前記封止用の低融点ガラスから成るガ
ラス部材はその熱膨張係数が絶縁容器を構成する酸化ア
ルミニウム質焼結体の熱膨張係数に近似した値を有する
ガラス、具体的には酸化鉛75.0重量％、酸化チタン9.0
重量％、酸化ホウ素7.5 重量％、酸化亜鉛2.0 重量％等
を含むガラスが使用されており、絶縁容器とガラス部材
との間に半導体素子の発する熱等が印加されても両者間
に大きな熱応力が発生することはなく両者の接合が維持
されるようになっている。The glass member made of the low-melting glass for sealing has a coefficient of thermal expansion close to that of the aluminum oxide sintered body forming the insulating container, specifically, glass. Lead oxide 75.0% by weight, titanium oxide 9.0
Glass containing 5% by weight of boron oxide, 7.5% by weight of boron oxide, 2.0% by weight of zinc oxide, etc. is used, and even if heat generated by the semiconductor element is applied between the insulating container and the glass member, a large thermal stress occurs between them. It does not occur and the joining of both is maintained.
【０００４】しかしながら、近時、半導体素子の高密度
化、高集積化が急激に進んでおり、半導体素子の作動時
に発する熱量が極めて大きなものとなってきている。そ
のためこの半導体素子を上述した従来の半導体素子収納
用パッケージに収容した場合、パッケージの絶縁容器を
構成する酸化アルミニウム質焼結体の熱伝導率が約20W/
m ・K と低いため、該絶縁容器を介して半導体素子が作
動時に発する熱を大気中に良好に放散させることができ
ず、その結果、半導体素子が該素子自身の発する熱によ
って高温となり、半導体素子に熱破壊を起こさせたり、
特性に熱変化を与え、誤動作を生じさせたりするという
欠点を招来した。However, recently, the density and integration of semiconductor elements have rapidly increased, and the amount of heat generated during the operation of semiconductor elements has become extremely large. Therefore, when this semiconductor element is housed in the conventional semiconductor element housing package described above, the thermal conductivity of the aluminum oxide sintered body that constitutes the insulating container of the package is about 20 W /
Since it is as low as m · K, the heat generated by the semiconductor element during operation cannot be well dissipated into the atmosphere through the insulating container, and as a result, the semiconductor element becomes high temperature due to the heat generated by the element itself, and the semiconductor is heated. Causing thermal damage to the element,
This has a drawback that it causes a thermal change in the characteristics and causes a malfunction.
【０００５】そこで上記欠点を解消するために絶縁容器
を熱伝導率が80W/m ・K 以上の極めて熱を伝え易い窒化
アルミニウム質焼結体で形成することが考えられる。Therefore, in order to solve the above-mentioned drawbacks, it is conceivable to form the insulating container with an aluminum nitride sintered body having a thermal conductivity of 80 W / m · K or more, which is extremely easy to transfer heat.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、絶縁容
器を窒化アルミニウム質焼結体で形成した場合、該窒化
アルミニウム質焼結体の熱膨張係数が4.2 〜4.7 ×10-6
/ ℃であり、外部リード端子を取着するガラス部材の熱
膨張係数(6.0〜8.0 ×10-6/ ℃) と相違するため、絶縁
容器に外部リード端子をガラス部材を介して取着した
後、絶縁容器とガラス部材に半導体素子が作動時に発す
る熱等が印加されると両者間に熱膨張係数の相違に起因
する大きな熱応力が発生してガラス部材が絶縁容器より
剥離し、その結果、絶縁容器の気密封止が破れて内部に
収容する半導体素子を長期間にたり正常、且つ安定に作
動させることが不可となったり、外部リード端子が絶縁
容器より外れたりするという欠点を誘発した。However, when the insulating container is made of an aluminum nitride sintered body, the coefficient of thermal expansion of the aluminum nitride sintered body is 4.2 to 4.7 × 10 -6.
/ ° C, which is different from the coefficient of thermal expansion (6.0 to 8.0 × 10 -6 / ° C) of the glass member to which the external lead terminal is attached, so after attaching the external lead terminal to the insulating container through the glass member, When the heat generated by the semiconductor element during operation is applied to the insulating container and the glass member, a large thermal stress occurs due to the difference in thermal expansion coefficient between the two, and the glass member is peeled off from the insulating container. The airtight sealing of the insulating container is broken, and the semiconductor element housed inside cannot be operated normally and stably for a long period of time, or the external lead terminals are detached from the insulating container.
【０００７】[0007]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は半導体素子の気密封止を完全とし、半導
体素子が熱破壊したり、特性に熱変化を生じるような高
温となるのを有効に防止して半導体素子を長期間にわた
り正常、且つ安定に作動させることができる半導体素子
収納用パッケージを提供することにある。SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and its purpose is to complete the hermetic sealing of a semiconductor element and to prevent the semiconductor element from being thermally broken or having its characteristics thermally changed. It is an object of the present invention to provide a package for accommodating a semiconductor element, which can effectively prevent the above from occurring and operate the semiconductor element normally and stably for a long period of time.
【０００８】[0008]
【課題を解決するための手段】本発明は絶縁基体と蓋体
との間に外部リード端子を挟み、絶縁基体と蓋体と外部
リード端子とをガラス部材で接合することによって内部
に半導体素子を気密に収容する半導体素子収納用パッケ
ージであって、前記絶縁基体及び蓋体を窒化アルミニウ
ム質焼結体で、ガラス部材を酸化鉛20.0乃至50.0重量
％、酸化亜鉛3.0乃至13.0重量％、酸化珪素3.0 乃至13.
0重量％、酸化ホウ素3.0 乃至13.0重量％を含むガラス
成分にフィラーとしてのウイレマイト系化合部を30.0乃
至50.0重量％、チタン酸鉛系化合物を10.0乃至30.0重量
％添加したガラスで形成したことを特徴とするものであ
る。According to the present invention, an external lead terminal is sandwiched between an insulating base and a lid, and a glass member is used to bond the insulating base, the lid and the external lead terminal to each other to form a semiconductor element inside. A package for housing a semiconductor device which is hermetically housed, wherein the insulating substrate and the lid are aluminum nitride sintered bodies, the glass member is lead oxide 20.0 to 50.0 wt%, zinc oxide 3.0 to 13.0 wt%, and silicon oxide 3.0. Through 13.
It is characterized by being made of glass containing 0% by weight, a glass component containing 3.0 to 13.0% by weight of boron oxide, 30.0 to 50.0% by weight of a willemite compound as a filler, and 10.0 to 30.0% by weight of a lead titanate compound. It is what
【０００９】[0009]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1 は本発明の半導体素子収納用パッケージの一実
施例を示し。1 は絶縁基体、2 は蓋体である。この絶縁
基体1 と蓋体2 とで半導体素子3 を収容する絶縁容器4
を構成する。The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for housing a semiconductor device of the present invention. 1 is an insulating substrate and 2 is a lid. An insulating container 4 for housing the semiconductor element 3 is formed by the insulating base 1 and the lid 2.
Make up.
【００１０】前記絶縁基体１及び蓋体2 はそれぞれの中
央部に半導体素子3 を収容する空所を形成するための凹
部が設けてあり、絶縁基体1 の凹部1a底面には半導体素
子3がガラス、樹脂、ロウ材等の接着剤を介して接着固
定される。The insulating base 1 and the lid 2 are each provided with a recess at the center thereof for forming a space for accommodating the semiconductor element 3, and the semiconductor element 3 is made of glass on the bottom surface of the recess 1a of the insulating base 1. The adhesive is fixed through an adhesive such as a resin or a brazing material.
【００１１】前記絶縁基体1 及び蓋体2 は窒化アルミニ
ウム質焼結体から成り、窒化アルミニウム(AlN) 、イッ
トリア(Y2 O 3 ) 等に適当な有機溶剤、溶媒を添加混合
した原料粉末を図1 に示す絶縁基体1 及び蓋体2 の形状
に対応したプレス型内に充填させるとともに一定圧力を
印加して成形し、しかる後、前記成形品を約1800℃の温
度で焼成することによって製作される。The insulating substrate 1 and the lid 2 are made of an aluminum nitride sintered material, and a raw material powder obtained by adding and mixing an appropriate organic solvent to aluminum nitride (AlN), yttria (Y 2 O 3 ) or the like is mixed. It is manufactured by filling in a press mold corresponding to the shapes of the insulating base 1 and the lid 2 shown in 1 and molding by applying a constant pressure, and then calcining the molded product at a temperature of about 1800 ° C. It
【００１２】前記絶縁基体1 及び蓋体2 を構成する窒化
アルミニウム質焼結体はその熱伝導率が80W/m ・K 以上
と高く、熱を伝導し易いため絶縁基体1 と蓋体2 とから
成る絶縁容器4 の内部に半導体素子3 を収容し作動させ
た場合、絶縁容器4 は半導体素子3 の発する熱を直接伝
導吸収するとともに該吸収した熱を大気中に良好に放散
することが可能となり、これによって半導体素子3 は常
に低温として熱破壊したり、特性に熱変化を生じ、誤動
作したりすることはなくなる。The thermal conductivity of the aluminum nitride sintered body forming the insulating base 1 and the lid 2 is as high as 80 W / m · K or more, and it is easy to conduct heat. When the semiconductor element 3 is housed and operated in the insulating container 4 consisting of the insulating container 4, the insulating container 4 can directly conduct and absorb the heat generated by the semiconductor element 3 and dissipate the absorbed heat into the atmosphere. As a result, the semiconductor element 3 is prevented from being thermally broken at a low temperature all the time, causing a thermal change in characteristics, and malfunctioning.
【００１３】また前記絶縁基体1 及び蓋体2 はその相対
向する各々の主面にガラス部材5 、6 が予め厚さ0.3mm
程度に被着形成されており、該絶縁基体1 及び蓋体2 の
各々の主面に被着されているガラス部材5 、6 を加熱溶
融させ、一体化させることによって絶縁基体1 と蓋体2
とから成る絶縁容器4 内部に半導体素子3 が気密に収容
される。Further, the insulating base 1 and the lid 2 have glass members 5 and 6 each having a thickness of 0.3 mm in advance on their main surfaces facing each other.
The glass members 5 and 6 which are adhered and formed to some extent and which are adhered to the main surfaces of the insulating base 1 and the lid 2 are melted by heating and integrated to form the insulating base 1 and the lid 2.
The semiconductor element 3 is hermetically housed in the insulating container 4 composed of.
【００１４】前記絶縁基体1 及び蓋体2 の相対向する主
面に被着されるガラス部材5 、6 は酸化鉛20.0乃至50.0
重量％、酸化亜鉛3.0 乃至13.0重量％、酸化珪素3.0 乃
至13.0重量％、酸化ホウ素3.0 乃至13.0重量％を含むガ
ラス成分にフィラーとしてのウイレマイト系化合部を3
0.0乃至50.0重量％、チタン酸鉛系化合物を10.0乃至30.
0重量％添加したガラスから成り、該ガラス粉末に適当
な有機溶剤、溶媒を添加混合して得たガラスペーストを
従来周知のスクリーン印刷等の厚膜手法を採用すること
により絶縁基体1 及び蓋体2 の相対向する各々の主面に
厚さ0.3mm 程度に被着される。The glass members 5 and 6 adhered to the main surfaces of the insulating substrate 1 and the lid body 2 facing each other are made of lead oxide 20.0 to 50.0.
3% by weight of zinc oxide, 3.0 to 13.0% by weight of zinc oxide, 3.0 to 13.0% by weight of silicon oxide, and 3.0 to 13.0% by weight of boron oxide, and 3 parts of willemite compound as a filler in the glass component.
0.0 to 50.0 wt%, lead titanate-based compound 10.0 to 30.
Insulating substrate 1 and lid are made of glass added with 0% by weight, and a glass paste obtained by adding and mixing a suitable organic solvent and solvent to the glass powder is adopted by a conventionally known thick film technique such as screen printing. A thickness of about 0.3 mm is applied to each of the two opposite major surfaces.
【００１５】前記ガラス部材5 、6 はまたその熱膨張係
数が38〜53×10-6/ ℃であり、絶縁基体1 及び蓋体2 を
構成する窒化アルミニウム質焼結体の熱膨張係数に近似
する値を有していることから絶縁基体1 と蓋体2 とをガ
ラス部材5 、6 を介して接合させ、絶縁容器4 を気密に
封止する際、絶縁基体1 及び蓋体2 とガラス部材5 、6
との間には両者の熱膨張係数の相違に起因する熱応力が
発生することは殆どなく、絶縁基体1 と蓋体2 とをガラ
ス部材5 、6 を介し強固に接合することが可能となる。The glass members 5 and 6 also have a coefficient of thermal expansion of 38 to 53 × 10 −6 / ° C., which is close to the coefficient of thermal expansion of the aluminum nitride sintered body forming the insulating base 1 and the lid 2. Since the insulating base 1 and the lid 2 are bonded to each other via the glass members 5 and 6 to hermetically seal the insulating container 4, the insulating base 1 and the lid 2 and the glass member are 5, 6
Thermal stress due to the difference in thermal expansion coefficient between the two is hardly generated, and the insulating base 1 and the lid 2 can be firmly bonded to each other via the glass members 5 and 6. .
【００１６】尚、前記ガラス部材5 、6 はそれを構成す
る酸化鉛(PbO) が20.0重量％未満であるとガラスの軟化
溶融温度が高くなり、ガラス部材5 、6 を介して絶縁容
器4を気密封止する際、カラス部材5 、6 を軟化溶融さ
せる熱によって半導体素子3に熱劣化を招来させ、また5
0.0重量％を越えるとガラスの耐薬品性が劣化し、絶縁
容器4 の気密封止の信頼性が大きく低下するため酸化鉛
(PbO) はその量が20.0乃至50.0重量％の範囲に特定され
る。When the lead oxide (PbO) constituting the glass members 5 and 6 is less than 20.0% by weight, the softening and melting temperature of the glass becomes high, and the insulating container 4 is inserted through the glass members 5 and 6. When airtightly sealed, the heat that softens and melts the glass members 5 and 6 causes thermal deterioration of the semiconductor element 3.
If it exceeds 0.0% by weight, the chemical resistance of the glass deteriorates and the reliability of the hermetic sealing of the insulating container 4 is greatly reduced.
The amount of (PbO) is specified in the range of 20.0 to 50.0% by weight.
【００１７】また酸化亜鉛(ZnO) はその量が3.0 重量％
未満であるとガラス部材5 、6 の結晶化が困難となって
後述する外部リード端子を強固に固定することができな
くなり、また13.0重量％を越えるとガラスの結晶化が進
んで流動性が劣化し絶縁容器4 の気密封止が困難となる
ため酸化亜鉛(ZnO) はその量が3.0 乃至13.0重量％の範
囲に特定される。The amount of zinc oxide (ZnO) is 3.0% by weight.
If it is less than the above, it becomes difficult to crystallize the glass members 5 and 6, and it becomes impossible to firmly fix the external lead terminals described later.If it exceeds 13.0% by weight, the crystallization of the glass proceeds and the fluidity deteriorates. However, since it becomes difficult to hermetically seal the insulating container 4, zinc oxide (ZnO) is specified in the range of 3.0 to 13.0% by weight.
【００１８】また酸化珪素(SiO2 ) はその量が3.0 重量
％未満であるとガラスの結晶化が進んで絶縁容器4 の気
密封止が困難となり、また13.0重量％を越えるとガラス
の軟化溶融温度が高くなり、ガラス部材5 、6 を介して
絶縁容器4 を気密封止する際、カラス部材5 、6 を軟化
溶融させる熱によって半導体素子3 に熱劣化を招来させ
てしまうことから酸化珪素(SiO2 ) はその量が3.0 乃至
13.0重量％の範囲に特定される。When the amount of silicon oxide (SiO 2 ) is less than 3.0% by weight, the crystallization of the glass progresses to make it difficult to hermetically seal the insulating container 4, and when it exceeds 13.0% by weight, the glass softens and melts. When the temperature rises and the insulating container 4 is hermetically sealed through the glass members 5 and 6, the heat that softens and melts the glass members 5 and 6 causes thermal deterioration of the semiconductor element 3, which results in silicon oxide ( The amount of SiO 2 ) is 3.0 to
It is specified in the range of 13.0% by weight.
【００１９】また酸化ホウ素(B2 O 3 ) はその量が3.0
重量％未満であるとガラスの熱膨張係数が大きくなって
絶縁基体1 と蓋体2 の熱膨張と合わなくなり、また13.0
重量％を越えるとガラスの耐薬品性が劣化し、絶縁容器
4 の気密封止の信頼性が大きく低下するため酸化ホウ素
(B2 O 3 ) はその量が3.0 乃至13.0重量％の範囲に特定
される。The amount of boron oxide (B 2 O 3 ) is 3.0
If it is less than 1% by weight, the coefficient of thermal expansion of glass becomes large, and it does not match the thermal expansion of the insulating base 1 and the lid 2, and
If the content exceeds 100% by weight, the chemical resistance of the glass will deteriorate and the insulation container
Boron oxide because the reliability of hermetic sealing of 4 is greatly reduced.
The amount of (B 2 O 3 ) is specified in the range of 3.0 to 13.0% by weight.
【００２０】更にフィラーとして添加されるウイレマイ
ト系化合物(2ZnO ・SiO 2 ) はその量が30.0重量％未満
であるとガラスの熱膨張係数が大きくなって絶縁基体1
と蓋体2 の熱膨張と合わなくなり、また50.0重量％を越
えるとガラスの流動性が劣化し、絶縁容器4 の気密封止
の信頼性が劣化するためウイレマイト系化合物(2ZnO・S
iO 2 ) はその量が30.0乃至50.0重量％の範囲に特定さ
れる。If the amount of the willemite compound (2ZnO.SiO 2 ) added as a filler is less than 30.0% by weight, the thermal expansion coefficient of the glass becomes large and the insulating substrate 1
When it exceeds 50.0% by weight, the fluidity of the glass deteriorates and the reliability of the airtight sealing of the insulating container 4 deteriorates, so that the willemite compound (2ZnO ・ S
The amount of iO 2 ) is specified in the range of 30.0 to 50.0% by weight.
【００２１】またチタン酸鉛系化合物(PbO・TiO 2 ) は
その量が10.0重量％未満であるとガラスの熱膨張係数が
大きくなって絶縁基体1 と蓋体2 の熱膨張と合わなくな
り、また30.0重量％を越えるとガラスの流動性が劣化
し、絶縁容器4 の気密封止の信頼性が劣化するためチタ
ン酸鉛系化合物(PbO・TiO 2 ) はその量が10.0乃至30.0
重量％の範囲に特定される。If the amount of the lead titanate-based compound (PbO.TiO 2 ) is less than 10.0% by weight, the coefficient of thermal expansion of glass becomes large, and the thermal expansion of the insulating substrate 1 and the lid 2 does not match. If it exceeds 30.0% by weight, the fluidity of the glass deteriorates and the reliability of hermetic sealing of the insulating container 4 deteriorates, so the lead titanate-based compound (PbO ・ TiO 2 ) content is 10.0 to 30.0%.
It is specified in the range of% by weight.
【００２２】前記絶縁基体1 と蓋体2 との間にはまた導
電性材料、例えばコバール金属(Fe-Ni-Co 合金) や42ア
ロイ(Fe-Ni合金) 等の金属から成る外部リード端子7 が
配されており、該外部リード端子7 は半導体素子3 の各
電極がボンディングワイヤ8を介して電気的に接続さ
れ、外部リード端子7 を外部電気回路に接続することに
よって半導体素子3 は外部電気回路と接続されることと
なる。An external lead terminal 7 made of a conductive material, for example, a metal such as Kovar metal (Fe-Ni-Co alloy) or 42 alloy (Fe-Ni alloy) is provided between the insulating base body 1 and the lid body 2. The external lead terminals 7 are electrically connected to the respective electrodes of the semiconductor element 3 via the bonding wires 8. By connecting the external lead terminals 7 to an external electric circuit, the semiconductor element 3 is electrically connected to the external electrical terminal. It will be connected to the circuit.
【００２３】前記外部リード端子7 は、絶縁基体1 と蓋
体2 とから成る絶縁容器4 をガラス部材5 、6 を溶融一
体化させて気密封止する際に同時に絶縁基体1 と蓋体2
との間に取着固定される。The external lead terminal 7 has the insulating base 1 and the lid 2 simultaneously when the insulating container 4 composed of the insulating base 1 and the lid 2 is hermetically sealed by melting and integrating the glass members 5 and 6.
It is attached and fixed between.
【００２４】尚、前記外部リード端子7 はコバール金属
等のインゴット( 塊) を従来周知の圧延加工法及び打ち
抜き加工法等を採用し、所定の板状に成形することによ
って製作される。The external lead terminal 7 is manufactured by forming an ingot (lump) of Kovar metal or the like into a predetermined plate shape by using the conventionally known rolling processing method and punching processing method.
【００２５】また前記外部リード端子7 はその外表面に
ニッケル、金等の良導電性で、且つ耐蝕性に優れた金属
を1.0 乃至20.0μm の厚みにメッキにより層着させてお
くと外部リード端子7 の酸化腐食を有効に防止するとと
もに外部リード端子7 と外部電気回路との電気的導通を
良好となすことができる。従って、前記外部リード端子
7 はその外表面にニッケル、金等の良導電性で、且つ耐
蝕性に優れた金属を1.0 乃至20.0μm の厚みにメッキに
より層着させておくことが好ましい。The outer lead terminal 7 is formed by plating the outer surface of the outer lead terminal with a metal having good conductivity and corrosion resistance, such as nickel or gold, to a thickness of 1.0 to 20.0 μm. It is possible to effectively prevent oxidative corrosion of 7 and to make good electrical continuity between the external lead terminal 7 and the external electric circuit. Therefore, the external lead terminal
It is preferable that the outer surface of 7 is plated with a metal such as nickel or gold having good conductivity and excellent corrosion resistance to a thickness of 1.0 to 20.0 μm by plating.
【００２６】かくしてこの半導体素子収納用パッケージ
によれば、絶縁基体1 の上面に設けた凹部1a底面に接着
剤を介して半導体素子3 を取着固定するとともに該半導
体素子3 の各電極をボンディングワイヤ8 により外部リ
ード端子7 に接続させ、しかる後、絶縁基体1 と蓋体2
とをその両者の相対向する主面に予め被着させておいた
ガラス部材5 、6 を溶融一体化させ接合すると絶縁基体
1 と蓋体2 とから成る絶縁容器4 内部に半導体素子3 が
気密に封止されて最終製品としての半導体装置となる。Thus, according to this semiconductor element accommodating package, the semiconductor element 3 is attached and fixed to the bottom surface of the concave portion 1a provided on the upper surface of the insulating substrate 1 with an adhesive and each electrode of the semiconductor element 3 is bonded with a bonding wire. 8 to connect to the external lead terminal 7, then insulate base 1 and lid 2
And the glass members 5 and 6 which have been previously adhered to the opposite main surfaces of the two, are fused and integrated to form an insulating substrate.
The semiconductor element 3 is hermetically sealed in the inside of the insulating container 4 composed of 1 and the lid 2 to form a semiconductor device as a final product.
【００２７】また本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能である。The present invention is not limited to the above-mentioned embodiments, but various modifications can be made without departing from the gist of the present invention.
【００２８】[0028]
【発明の効果】本発明の半導体素子収納用パッケージに
よれば半導体素子を収容する絶縁容器を窒化アルミニウ
ム質焼結体で形成したことから内部に収容する半導体素
子が作動時に熱を発生したとしてもその熱は絶縁容器を
介して大気中に良好に放散され、その結果、半導体素子
は常に低温となり、熱破壊したり、特性に熱変化を生
じ、誤動作したりするのが皆無となって長期間にわたり
正常、且つ安定に作動することが可能となる。According to the semiconductor element housing package of the present invention, since the insulating container for housing the semiconductor element is made of the aluminum nitride sintered material, even if the semiconductor element housed inside generates heat during operation. The heat is satisfactorily dissipated into the atmosphere through the insulating container, and as a result, the semiconductor element is always at a low temperature, and there is no possibility of thermal destruction, thermal change in characteristics, malfunctions, etc. Thus, it becomes possible to operate normally and stably.
【００２９】また絶縁容器を封止し、且つ外部リード端
子を絶縁容器に取着するガラス部材を酸化鉛20.0乃至5
0.0重量％、酸化亜鉛3.0 乃至13.0重量％、酸化珪素3.0
乃至13.0重量％、酸化ホウ素3.0 乃至13.0重量％を含
むガラス成分にフィラーとしてのウイレマイト系化合部
を30.0乃至50.0重量％、チタン酸鉛系化合物を10.0乃至
30.0重量％添加したガラスで形成したことからガラス部
材の熱膨張係数を絶縁容器に近似させることができ、そ
の結果、絶縁容器とガラス部材との接合強度が強固とな
り、絶縁容器の気密封止の信頼性が大幅に向上して、内
部に収容する半導体素子を長期間にわたり正常、且つ安
定に作動させることができる。Further, a glass member for sealing the insulating container and attaching the external lead terminals to the insulating container is made of lead oxide 20.0 to 5
0.0% by weight, zinc oxide 3.0 to 13.0% by weight, silicon oxide 3.0
To 13.0 wt%, boron oxide 3.0 to 13.0 wt% glass compound containing a willemite compound as a filler 30.0 to 50.0 wt%, lead titanate compound 10.0 to
Since it is made of glass added with 30.0% by weight, the thermal expansion coefficient of the glass member can be approximated to that of the insulating container, and as a result, the bonding strength between the insulating container and the glass member becomes strong, and the airtight sealing of the insulating container is achieved. The reliability is greatly improved, and the semiconductor element housed inside can be operated normally and stably for a long period of time.
【図１】本発明の半導体素子収納用パッケージの一実施
例を示す縦断面図である。FIG. 1 is a vertical cross-sectional view showing an embodiment of a package for housing a semiconductor device of the present invention.
１・・・・・・・絶縁基体 ２・・・・・・・蓋体 ３・・・・・・・半導体素子 ４・・・・・・・絶縁容器 ５、６・・・・・ガラス部材 ７・・・・・・・外部リード端子 1 ... Insulating substrate 2 ... Lid 3 ... Semiconductor element 4 ... Insulating container 5, 6 ... Glass member 7 ... External lead terminals
Claims (1)
挟み、絶縁基体と蓋体と外部リード端子とをガラス部材
で接合することによって内部に半導体素子を気密に収容
する半導体素子収納用パッケージであって、前記絶縁基
体及び蓋体を窒化アルミニウム質焼結体で、ガラス部材
を酸化鉛20.0乃至50.0重量％、酸化亜鉛3.0 乃至13.0重
量％、酸化珪素3.0 乃至13.0重量％、酸化ホウ素3.0 乃
至13.0重量％を含むガラス成分にフィラーとしてのウイ
レマイト系化合部を30.0乃至50.0重量％、チタン酸鉛系
化合物を10.0乃至30.0重量％添加したガラスで形成した
ことを特徴とする半導体素子収納用パッケージ。1. A semiconductor element housing for hermetically accommodating a semiconductor element therein by sandwiching an external lead terminal between an insulating base and a lid, and joining the insulating base, lid and external lead terminal with a glass member. A package for use, wherein the insulating substrate and the lid are made of an aluminum nitride sintered body, and the glass member is made of lead oxide 20.0 to 50.0% by weight, zinc oxide 3.0 to 13.0% by weight, silicon oxide 3.0 to 13.0% by weight, and boron oxide. For storing semiconductor elements, the glass component containing 3.0 to 13.0% by weight of a willemite compound as a filler is added in an amount of 30.0 to 50.0% by weight and a lead titanate compound is added in a range of 10.0 to 30.0% by weight. package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4165892A JP2922719B2 (en) | 1992-06-24 | 1992-06-24 | Package for storing semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4165892A JP2922719B2 (en) | 1992-06-24 | 1992-06-24 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0613483A true JPH0613483A (en) | 1994-01-21 |
| JP2922719B2 JP2922719B2 (en) | 1999-07-26 |
Family
ID=15820963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4165892A Expired - Fee Related JP2922719B2 (en) | 1992-06-24 | 1992-06-24 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2922719B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100376283B1 (en) * | 1995-12-15 | 2003-06-11 | 삼성코닝 주식회사 | Adhesive glass composition |
-
1992
- 1992-06-24 JP JP4165892A patent/JP2922719B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100376283B1 (en) * | 1995-12-15 | 2003-06-11 | 삼성코닝 주식회사 | Adhesive glass composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2922719B2 (en) | 1999-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2922719B2 (en) | Package for storing semiconductor elements | |
| JP2922718B2 (en) | Package for storing semiconductor elements | |
| JP3318449B2 (en) | Package for storing semiconductor elements | |
| JP2962939B2 (en) | Package for storing semiconductor elements | |
| JP2750237B2 (en) | Electronic component storage package | |
| JP2685083B2 (en) | Manufacturing method of semiconductor device storage package | |
| JP3292609B2 (en) | Package for storing semiconductor elements | |
| JP2759300B2 (en) | Glass-encapsulated semiconductor element storage package | |
| JP2842716B2 (en) | Package for storing semiconductor elements | |
| JP4514355B2 (en) | Electronic component storage container | |
| JP2873130B2 (en) | Package for storing semiconductor elements | |
| JP2931481B2 (en) | Package for storing semiconductor elements | |
| JP2555178Y2 (en) | Package for storing semiconductor elements | |
| JP2545401Y2 (en) | Package for storing semiconductor elements | |
| JPH0629330A (en) | Semiconductor device | |
| JPH05121581A (en) | Semiconductor device housing package | |
| JP2552554Y2 (en) | Package for storing semiconductor elements | |
| JP2545400Y2 (en) | Package for storing semiconductor elements | |
| JP2545402Y2 (en) | Package for storing semiconductor elements | |
| JP2838589B2 (en) | Package for storing semiconductor elements | |
| JP2552419Y2 (en) | Package for storing semiconductor elements | |
| JP2691306B2 (en) | Package for storing semiconductor elements | |
| JP2997367B2 (en) | Package for storing semiconductor elements | |
| JP2548964Y2 (en) | Package for storing semiconductor elements | |
| JP3207075B2 (en) | Package for storing semiconductor elements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080430 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090430 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090430 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100430 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110430 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |