JPH043499Y2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor package that houses a semiconductor integrated circuit element, and particularly relates to an improvement in a glass-sealed semiconductor package in which the package is sealed by glass welding.

[Conventional technology]

Conventionally, a package for accommodating semiconductor devices, particularly semiconductor integrated circuit devices, includes an insulating container consisting of an insulating base and a lid body having a cavity for accommodating the semiconductor device therein, and a semiconductor to be accommodated in the container. It consists of an external lead terminal for electrically connecting the element to an external circuit, and a glass layer for sealing is formed in advance on the opposing main surfaces of the base and lid. After fixing the external lead terminals and wire-bonding each electrode of the semiconductor element to the external lead terminals, the respective glass layers are melted and integrated, thereby airtightly sealing the semiconductor element inside.

[Problem that the invention attempts to solve]

However, in this conventional glass-sealed semiconductor package, each glass layer attached to the opposing main surfaces of the insulating base and the lid is usually made by adding and mixing a suitable solvent to a low-melting-point glass powder. It is formed by applying the obtained glass paste using a thick film method such as screen printing and heating and scattering the solvent, and the surface roughness is Rmax50 ~
Extremely rough at 70μm. Therefore, moisture contained in the atmosphere easily adheres to the surface of this glass layer.
When the insulating container is sealed, the attached moisture and the like enter the inside of the container and act on the semiconductor elements housed inside, resulting in deterioration and variation in the characteristics of the semiconductor elements.

Furthermore, since the surface of the glass layer is rough and uneven, when external force is applied during the assembly process, etc.
The external force concentrates on the convex part and causes a part of the glass layer to break off, resulting in the insulating container becoming airtight due to insufficient glass, or the missing glass being stored inside. collides with a semiconductor element,
It also has the disadvantage of causing deterioration and variation in the characteristics of semiconductor elements.

[Purpose of invention]

The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to effectively prevent the adhesion of moisture etc. to the sealing glass and the occurrence of chipping due to the application of external force to the sealing glass, and to prevent the semiconductors housed inside. The device is completely hermetically sealed to ensure that the semiconductor device operates normally for a long period of time.
Another object of the present invention is to provide a glass-sealed semiconductor package that can be stably operated.

[Means for solving problems]

In the present invention, an external lead terminal is sandwiched between an insulating base and a lid whose main surfaces facing each other are coated with a glass layer, and the semiconductor element is hermetically sealed inside by melting and integrating the glass layer. In the glass-sealed semiconductor package, the surface roughness of the glass layer deposited on the main surfaces of the insulating base and the lid is
It is characterized by an Rmax of 5.0 μm or less.

〔Example〕

Next, the present invention will be explained in detail based on the accompanying drawings.

1 and 2 show an embodiment of the glass-sealed semiconductor package of the present invention, in which 1 is a package base made of an electrically insulating material such as ceramic or glass, and 2 is a lid body also made of an electrically insulating material. be. An insulating container 3 is formed by this insulating base 1 and lid 2.
is configured.

The insulating base body 1 and the lid body 2 each have a recess formed in the center thereof to accommodate a semiconductor element, and the semiconductor element 4 is placed on the bottom surface of the recess of the base body 1 with an adhesive such as resin, glass, or brazing material. It is attached and fixed through. Glass layers 6a and 6b for sealing are respectively adhered to the opposing main surfaces of the base body 1 and the lid body 2, and insulation is achieved by heating and melting the glass layers 6a and 6b to integrate them. The semiconductor element 4 inside the container 3 is hermetically sealed.

The glass layers 6a and 6b are made of, for example, low melting point glass, and a glass paste obtained by adding a suitable solvent to the glass powder is applied to the substrate 1 and the lid 2 by employing a conventionally well-known thick film method. It is formed on the main surface facing the opposite direction.

Further, the glass layers 6a and 6b are formed by applying glass paste to the opposing main surfaces of the insulating base 1 and the lid 2, and then firing at a temperature of about 470°C to temporarily melt the glass, thereby changing the surface area. Unevenness has been removed, and the surface roughness is Rmax5.0μm or less.

The glass layers 6a and 6b attached to the opposing main surfaces of the insulating base 1 and the lid 2 have a rough surface.
Rmax is 5.0μm or less, and because it has a mirror surface, moisture contained in the atmosphere is extremely difficult to adhere to. This effectively prevents the particles from entering the semiconductor element 4 and acting on the semiconductor element 4 housed therein, thereby causing variations and deterioration in the characteristics of the semiconductor element 4. Further, the glass layer 6
Since the surfaces of glass layers a and 6b are mirror surfaces with an Rmax of 5.0 μm or less, even if an external force is applied during the assembly process, the external force is not concentrated at one point but is dispersed throughout the glass layers 6a and 6b. There are no gaps in the parts.

Therefore, this effectively prevents poor airtightness of the insulating container 3 due to insufficient amount of glass, and collision of chipped glass with the semiconductor element 4, resulting in deterioration and variation in the characteristics of the semiconductor element 4. .

An external lead terminal 5 made of a conductive material such as metal such as aluminum (Al), copper (Cu), Kovar (Fe-Ni-Co), etc. is arranged between the insulating base 1 and the lid 2. , the external lead terminals 5 are electrically connected to each electrode 7 of the semiconductor element 4 via a wire 5a, and by connecting the external lead terminals 5 to an external circuit, the semiconductor element 4 is connected to the external circuit. .

The external lead terminal 5 is attached between the base body 1 and the lid body 2 at the same time when the insulating container 3 is hermetically sealed by melting and integrating the glass layers 6a and 6b.

Thus, according to this semiconductor package, after the semiconductor element 4 is attached and fixed to the bottom of the recess of the base 1 and each electrode 7 of the semiconductor element 4 is connected to the external lead terminal 5 by the wire 5a, the base 1 and the lid are connected. Glass layer 6 previously applied to body 2
By heating and melting a and 6b and integrating them, the semiconductor element 4 is hermetically sealed therein.

[Effect of idea]

According to the glass-sealed semiconductor package of the present invention, since the surface roughness of the glass layer adhered to the opposing main surfaces of the insulating base and the lid is set to Rmax5.0 μm or less, moisture contained in the atmosphere can be reduced. The adhesion of moisture and the like to the surface of the glass layer can be minimized, and the semiconductor element can be operated normally and stably for a long period of time without any effect of the moisture or the like on the semiconductor element.

In addition, even if an external force is applied to the glass layer during the assembly process, etc., the external force will cause the surface of the glass layer to have an Rmax of 5.0 μm.
Since it is a mirror surface, it is not concentrated in one point but is dispersed throughout and becomes small, and there is no possibility that a part of the glass layer will be missing. Therefore, it is thereby possible to effectively prevent poor airtightness of the insulating container due to insufficient amount of glass and deterioration of the characteristics of the semiconductor element due to collision of the chipped glass with the semiconductor element.

[Brief explanation of the drawing]

FIG. 1 is an exploded perspective view showing an embodiment of the glass-sealed semiconductor package of the present invention, and FIG. 2 is a sectional view of the glass-sealed semiconductor package of FIG. 1 after being sealed. DESCRIPTION OF SYMBOLS 1... Insulating base, 2... Lid, 4... Semiconductor element, 5... External lead terminal, 6a, 6b... Glass layer, 7... Electrode.

Claims (1)

[Scope of utility model registration request] A glass-sealed type in which an external lead terminal is sandwiched between an insulating base and a lid whose main surfaces that face each other are covered with a glass layer, and the semiconductor element is hermetically sealed inside by melting and integrating the glass layer. 1. A glass-sealed semiconductor package, characterized in that the surface roughness of the glass layer deposited on the main surfaces of the insulating base and the lid is Rmax5.0 μm or less.