JP2001267446A - Package for containing semiconductor element and semiconductor device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem that cracking takes place in a sealing material due to stress caused by difference in the coefficient of thermal expansion between the sealing material and an external lead terminal. SOLUTION: A semiconductor element 5 and an external lead terminal 3 connected with the semiconductor element 5 are arranged between an insulating basic body 1 and a cover body 2 and the insulating basic body 1, the cover body 2 and the external lead terminal 3 are bonded, respectively, through a sealing material 4 thus obtaining a package for containing the semiconductor element hermetically. The sealing material 4 has a first region 4a on the insulating basic body side and a second region 4b on the cover body side wherein the external lead terminal 3 is clamped by the first and second regions 4a, 4b of the sealing material 4 and coefficients of thermal expansion of the first and second regions 4a, 4b of the sealing material 4 are 4.5-5.5 ppm/ deg.C and 6.0-7.5 ppm/ deg.C, respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for hermetically sealing and housing a semiconductor element, and more particularly to a semiconductor element housing package in which glass is used as a sealing material and a semiconductor element housing package. And a semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, semiconductor element housing packages for housing semiconductor elements include, for example, aluminum oxide sintered bodies, mullite sintered bodies, silicon nitride sintered bodies, silicon carbide sintered bodies, and the like. An insulating base made of an electrically insulating material, having a concave portion for forming a space for accommodating the semiconductor element in a substantially central portion of the upper surface, and a sealing material made of glass adhered to the upper surface; A lid having a concave portion for forming a cavity for accommodating a semiconductor element in a substantially central portion of a lower surface thereof, and a lower surface covered with a sealing material made of glass; and a semiconductor accommodated therein. An external lead terminal made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy for electrically connecting the element to an external electric circuit, and the external lead terminal is placed on the upper surface of the insulating base. With you The external lead terminals are temporarily fixed on the insulating substrate by melting the sealing material made of glass previously adhered, and then the semiconductor element is attached to the bottom of the concave portion of the insulating substrate, and each of the semiconductor elements is removed. The electrodes are connected to the external lead terminals via bonding wires, and then the respective sealing materials having the insulating substrate and the lid adhered to the opposing main surfaces are melted and integrated to form the insulating substrate. A semiconductor device as a product is obtained by sealing a container including the lid and the lid.

As a sealing material for joining the lid to the insulating base, for example, 70% by weight of lead oxide, 8.6% by weight of boron oxide, 7.8% by weight of titanium oxide, 6.7% by weight of zirconium oxide
Lead-boric acid based low-temperature glass containing

However, since such a sealing material contains lead oxide which is harmful to the human body as a main component, it does not contain lead oxide recently, for example, SnO—ZnO—P ₂ O _5.
-Based low-temperature sealing glass has been proposed (Patent No. 2628007)
No. 390037903).

In recent years, in response to the problem of high heat generation accompanying the high integration of semiconductor elements, a material having good heat dissipation properties has been required for the insulating substrate. Sinters have been used, and further, mullite sintered bodies having a thermal expansion coefficient similar to that of aluminum nitride sinters have been used for lids. I have.

[0006]

[SUMMARY OF THE INVENTION However, the above-mentioned SnO-ZnO-P ₂ O ₅ Keifutome glass, its thermal expansion coefficient is about 10 ppm / ° C., the iron to form the external lead terminals - nickel alloy Thermal expansion coefficient (about 5pp
m / ° C.), when the insulating base and the lid are joined to each other with the external lead terminal interposed therebetween with the sealing material interposed therebetween, each heat is generated between the sealing material and the external lead terminal. A large stress is generated due to the difference in the expansion coefficient, and this stress acts on the sealing material to cause cracks in the sealing material. As a result, the hermetic sealing of the semiconductor element storage package is broken, and There is a problem that the semiconductor element housed in the semiconductor device cannot be operated normally and stably for a long period of time.

Further, the thermal expansion coefficient of the SnO—ZnO—P ₂ O _{5 based} sealing glass is significantly different from the thermal expansion coefficient (4.0 to 4.3 ppm / ° C.) of the mullite sintered body used as the lid. Since the mechanical strength of the mullite sintered body is lower than that of the aluminum nitride sintered body or the aluminum sintered body, the thickness of the lid can be reduced to only about 0.6 mm. As a result, There is also a problem that the semiconductor device housing package cannot be made thinner.

The present invention has been devised in view of the above problems, and has as its object to hermetically seal a semiconductor element inside a container formed of an insulating base and a lid, thereby deteriorating its characteristics. An object of the present invention is to provide a thin semiconductor element housing package which can operate a semiconductor element normally and stably for a long period of time and a thin semiconductor device using the same.

[0009]

According to the present invention, there is provided a package for accommodating a semiconductor element, wherein a cover for surrounding the mounting section and forming a space for accommodating the semiconductor element is formed inside an insulating base having a mounting section for the semiconductor element. A semiconductor element housing package for hermetically sealing the semiconductor element in an empty space, wherein the semiconductor element is hermetically sealed with an external lead terminal between which the semiconductor element is electrically connected. The stopper has an external lead terminal sandwiched between the first region on the insulating substrate side and the second region on the lid side, and the first and second regions of the sealing material have a thermal expansion coefficient of 4.5 to 5.5 ppm / each. ° C and 6.0 to 7.5 ppm / ° C.

In the semiconductor device according to the present invention, the semiconductor element is mounted on the mounting portion of the package for housing the semiconductor element and is electrically connected to external lead terminals, and the lid is joined with the sealing material. It is characterized by the following.

According to the semiconductor device housing package of the present invention, the thermal expansion coefficient of the first region of the sealing material is 4.5 to 5.5 ppm.
/ ° C, the thermal expansion coefficient of the second region is set to 6.0 to 7.5 ppm / ° C to approximate the thermal expansion coefficient of the external lead terminal, and the external lead terminal is sandwiched between the first region and the second region of such a sealing material. Therefore, a large stress does not occur due to a difference in the coefficient of thermal expansion between them, thereby effectively preventing cracks from entering the sealing material. It is possible to normally and stably operate the semiconductor element housed therein with the hermetic sealing being completed for a long period of time.

The thermal expansion coefficient of the sealing material in the second region is set to 6.
Since the thermal expansion coefficient of 0 to 7.5 ppm / ° C was approximated to the coefficient of thermal expansion of the aluminum oxide sintered body having higher mechanical strength than that of the mullite sintered body, the aluminum oxide sintered body was used as the lid. Even if it does, a large stress does not occur between the second region of the sealing material and the lid due to the difference in the coefficient of thermal expansion, and as a result, the thickness of the lid becomes 0.25 m.
m, and the thickness of the semiconductor device housing package can be reduced.

Further, according to the semiconductor device of the present invention, the encapsulant is made of 35 to 55% by weight of phosphorus pentoxide containing no lead oxide, 20 to 40% by weight of tin monoxide, 10 to 20% by weight of zinc oxide, A first region in which a cordierite-based compound is externally added as a filler to a glass component consisting of 2 to 4% by weight of aluminum, 1 to 3% by weight of silicon oxide, and 1 to 6% by weight of boron oxide; 35-55% by weight phosphorus oxide, 20-40 tin oxide
Wt%, zinc oxide 10 ~ 20wt%, aluminum oxide 2 ~
4% by weight, 1 to 3% by weight of silicon oxide and 1 to 3% of boron oxide
Since it is composed of a glass component consisting of 6% by weight and a cordierite-based compound as a filler in a second region where 16-30% by weight is externally added, there is no harm to the human body and no load on the global environment. , And its sealing temperature is 430 ℃
Since the temperature is low, the temperature at which the insulating base and the lid are joined to each other to seal the semiconductor device housing package hermetically can be reduced to a low temperature. As a result, heat for melting the sealing material is generated inside. Even if it acts on the semiconductor element to be housed, the characteristics of the semiconductor element do not deteriorate, and the semiconductor element can be operated normally and stably for a long period of time.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package and a semiconductor device using the same according to the present invention, wherein 1 is an insulating base, 2 is a lid, 3 is an external lead terminal, 4 is a sealing material and 5 is a semiconductor element. Among these, the semiconductor element housing package of the present invention is constituted by the insulating base 1, the lid 2, the external lead terminals 3, and the encapsulant 4. The semiconductor device according to the invention is configured.

The insulating base 1 is made of an electrically insulating material such as an aluminum nitride sintered body, and has a recess 1a for forming a space for accommodating the semiconductor element 5 at a substantially central portion of the upper surface thereof. The semiconductor element 5 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive made of glass, resin, brazing material or the like.

When the insulating substrate 1 is made of, for example, an aluminum nitride sintered body, an organic binder, a solvent, a plasticizer, and a dispersant suitable for a raw material powder such as aluminum nitride, yttrium oxide, erbium oxide, and cerium oxide. The mixture is added and mixed to form a slurry, and the slurry is formed into a sheet using a sheet forming method such as a doctor blade method or a calender roll method, which is conventionally known, to obtain a ceramic green sheet (ceramic green sheet). Thereafter, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate punching processing, laminating a plurality of the sheets, and firing at a high temperature of about 1700 ° C.

One end of an external lead terminal 3 made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy is provided on the outer peripheral portion of the upper surface of the insulating base 1 via the first region 4a of the sealing material 4. Temporarily fixed. Such an external lead terminal 3 is formed by forming an ingot (a lump) such as an iron-nickel-cobalt alloy into a predetermined shape by using a conventionally known punching method or the like.

The external lead terminal 3 has a function of connecting the semiconductor element 5 housed therein to an external electric circuit, and one end of each of the electrodes of the semiconductor element 5 is connected via a bonding wire. Is connected to an external electric circuit, whereby the semiconductor element 5 is electrically connected to the external electric circuit.

The surface of the external lead terminal 3 is coated with a metal such as nickel or gold having good conductivity, good corrosion resistance and good wettability with the brazing material to a thickness of 1 to 20 μm by plating. Thus, oxidation corrosion of the external lead terminal 3 can be effectively prevented, and good electrical connection between the external lead terminal 3 and the external electric circuit can be achieved. Therefore, in order to prevent the external lead terminal 3 from being oxidized and corroded and to make a good electrical connection between the external lead terminal 3 and an external electric circuit, nickel, gold or the like is plated on the surface of the external lead terminal 3 by plating. Preferably, it is applied to a thickness of 20 μm.

Further, the insulating base 1 to which the external lead terminals 3 are temporarily fixed is provided with a cover 2 on the upper surface thereof, and a second region 4b of the sealing material 4 attached to the lower surface of the cover 2 and the insulating base 1. The first region of the sealing material 4 adhered to the upper surface is joined by being melted and integrated, whereby the semiconductor element 5 is hermetically sealed in the container 6 including the insulating base 1 and the lid 2. At the same time, the external lead terminals 3 are fixed between the insulating base 1 and the lid 2.

The lid 2 is made of an electrically insulating material such as an aluminum oxide sintered body. For example, when the lid 2 is made of an aluminum oxide sintered body, a raw material such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide or the like is used. An appropriate organic binder, a solvent, a plasticizer, a dispersant, etc. are added to the powder and mixed to form a slurry, and the slurry is formed into a sheet by employing a sheet forming method such as a doctor blade method or a calender roll method which is well known in the art. The ceramic green sheet (ceramic green sheet) is obtained by molding, and thereafter, the ceramic green sheet is subjected to an appropriate punching process, and a plurality of the green sheets are laminated and fired at a high temperature of about 1600 ° C. Alternatively, a raw material powder such as aluminum oxide is added and mixed with an appropriate organic solvent / solvent to prepare the raw material powder, and the raw material powder is formed into a predetermined shape by press molding. Thereafter, the formed body is heated to a temperature of about 1600 ° C. It is manufactured by firing.

A sealing material 4 for joining the insulating base 1 and the lid 2
Consists of a first region 4a on the side of the insulating substrate 1 having a thermal expansion coefficient of 4.5 to 5.5 ppm / ° C. and a second region 4b on the side of the lid 2 having a thermal expansion coefficient of 6.0 to 7.5 ppm / ° C. The external lead terminal 3 is sandwiched and joined between the first region 4a and the second region 4b.

In the present invention, the thermal expansion coefficients of the first region 4a and the second region 4b
, A large stress is not generated between the sealing material 4 and the external lead terminal 3 due to the difference in the thermal expansion coefficient, and the sealing material is cracked. This is effectively prevented, and the hermetic sealing of the package for accommodating the semiconductor element is completely completed, so that the semiconductor element accommodated therein can be operated normally and stably for a long period of time.

The sealing material 4 in the second region 4b on the lid 2 side
Has a coefficient of thermal expansion of 6.0 to 7.5 ppm / ° C., which is close to the coefficient of thermal expansion of the aluminum oxide sintered body, so that the lid 2 made of the aluminum oxide sintered body and the second region 4 b of the sealing material 4 A large stress is not generated due to the difference in the coefficient of thermal expansion between them, and as a result, the thickness of the lid 2 can be made as thin as about 0.25 mm. Can be made thinner.

Further, according to the package for accommodating a semiconductor element of the present invention, the encapsulant is made of phosphorus pentoxide containing no lead oxide.
A glass composition comprising 55% by weight, 20-40% by weight of tin monoxide, 10-20% by weight of zinc oxide, 2-4% by weight of aluminum oxide, 1-3% by weight of silicon oxide and 1-6% by weight of boron oxide As an external addition of cordierite compounds as 40 ~
45% by weight of the first region, 35 to 55% by weight of phosphorus pentoxide,
Cordierite as a filler in a glass component consisting of 20 to 40% by weight of tin monoxide, 10 to 20% by weight of zinc oxide, 2 to 4% by weight of aluminum oxide, 1 to 3% by weight of silicon oxide and 1 to 6% by weight of boron oxide Since it is composed of the second region to which 16 to 30% by weight of the compound is added by external addition, it does not harm the human body or load the global environment, and its sealing temperature is as low as 430 ° C. And the lid is joined to the insulating base, so that the temperature at which the semiconductor element housing package is hermetically sealed can be reduced to a low temperature, and as a result, the heat for melting the sealing material is housed inside. Does not cause deterioration of the characteristics of the semiconductor element, and allows the semiconductor element to operate normally and stably for a long period of time.

If the amount of phosphorus pentoxide in the first region 4a of the sealing material 4 is less than 35% by weight, the softening and melting temperature of the glass increases, and the container 6 is hermetically sealed at a low temperature. If it exceeds 55% by weight, the chemical resistance of the glass tends to deteriorate, and the reliability of hermetic sealing of the container 4 tends to decrease significantly. Therefore, the amount of phosphorus pentoxide is preferably in the range of 35-55% by weight.

If the amount of tin monoxide is less than 20% by weight, the softening and melting temperature of the glass increases, and
Tends to be difficult. On the other hand, if it exceeds 40% by weight, the chemical resistance of the glass tends to decrease, and the reliability of the hermetic sealing of the container 6 tends to greatly decrease. Therefore, the amount of tin monoxide is preferably in the range of 20-40% by weight.

If the amount of zinc oxide is less than 10% by weight, the softening and melting temperature of the glass tends to be high, and the hermetic sealing of the container 6 at low temperatures tends to be difficult, while if it exceeds 20% by weight. Crystallization of the glass proceeds, and hermetic sealing at low temperatures tends to be difficult. Therefore, the amount of zinc oxide is preferably in the range of 10 to 20% by weight.

If the aluminum oxide content is less than 2% by weight, the moisture resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 6 tends to decrease significantly. The softening / melting temperature tends to be high, and it tends to be difficult to hermetically seal the container 6 at a low temperature. Therefore,
Preferably, the amount of aluminum oxide is in the range of 2-4% by weight.

If the silicon oxide content is less than 1% by weight, the thermal expansion coefficient of the glass tends to be large and significantly different from the thermal expansion coefficient of the substrate 1, while if it exceeds 3% by weight, the softening and melting of the glass As the temperature increases, it tends to be difficult to hermetically seal the container 6 at a low temperature. Therefore, the amount of silicon oxide is preferably in the range of 1 to 3% by weight.

If the content of boron oxide is less than 1% by weight, the softening and melting temperature of the glass tends to be high, and it becomes difficult to hermetically seal the container 6 at a low temperature. There is a tendency that the chemical resistance is deteriorated and the reliability of hermetic sealing of the container 4 is greatly reduced. Therefore, the amount of boron oxide is preferably in the range of 1 to 6% by weight.

The filler of the cordierite-based compound functions to adjust the coefficient of thermal expansion of the first region 4a of the sealing material 4 and to adjust the fluidity thereof. When the content of the filler is less than 40% by weight, the thermal expansion coefficient of the first region 4a of the sealing material 4 greatly differs from the thermal expansion coefficient of the insulating base 1, and the first region of the sealing material 4 4a tends to be unable to be firmly joined to the insulating substrate 1. On the other hand, if it exceeds 45% by weight, the fluidity of the first region 4a of the sealing material 4 decreases, and it tends to be difficult to bond the external lead terminals 3 at a low temperature. Therefore, the filler content is 40
Preferably, it is in the range of ~ 45% by weight.

Further, when the average particle size of the cordierite-based compound filler is less than 3 μm, the first region 4
The fluidity of “a” tends to decrease and the hermetic sealing of the container 6 tends to be difficult. On the other hand, if it exceeds 9 μm, the mechanical strength of the first region 4 a of the sealing material 4 tends to decrease. Therefore,
Cordierite-based compound fillers have an average particle size of 3 to
It is preferred to be in the range of 9 μm.

The first region 4a of such a sealing material 4
Is less than 100 μm, the first region 4 of the sealing material 4
Due to the difference in the thermal expansion coefficient between the first region 4a and the second region 4b, peeling stress is generated at the interface between the insulating base 1 and the first region 4a of the sealing material 4 during sealing, and the reliability of hermetic sealing is reduced. Tend to do so. On the other hand, when the thickness exceeds 300 μm, the fluidity at the time of sealing decreases, and air-tight sealing at a low temperature tends to be difficult. Therefore, the thickness of the first region 4a of the sealing material 4 is preferably in the range of 100 to 300 μm.

Further, when the amount of phosphorus pentoxide is less than 35% by weight, the glass component in the second region 4b of the sealing material 4 has a high softening and melting temperature of the glass, and the container 6 is hermetically sealed at a low temperature. If it exceeds 55% by weight, the chemical resistance of the glass tends to deteriorate, and the reliability of hermetic sealing of the container 4 tends to decrease significantly. Therefore, the amount of phosphorus pentoxide is preferably in the range of 35-55% by weight.

If the amount of tin monoxide is less than 20% by weight, the softening and melting temperature of the glass becomes high, and
Tends to be difficult. On the other hand, if it exceeds 40% by weight, the chemical resistance of the glass tends to decrease, and the reliability of the hermetic sealing of the container 6 tends to greatly decrease. Therefore, the amount of tin monoxide is preferably in the range of 20-40% by weight.

If the amount of zinc oxide is less than 10% by weight, the softening and melting temperature of the glass tends to be high, and it becomes difficult to hermetically seal the container 6 at a low temperature, while if it exceeds 20% by weight. Crystallization of the glass proceeds, and hermetic sealing at low temperatures tends to be difficult. Therefore, the amount of zinc oxide is preferably in the range of 10 to 20% by weight.

If the aluminum oxide content is less than 2% by weight, the moisture resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 6 tends to decrease significantly. The softening / melting temperature tends to be high, and it tends to be difficult to hermetically seal the container 6 at a low temperature. Therefore,
Preferably, the amount of aluminum oxide is in the range of 2-4% by weight.

If the silicon oxide content is less than 1% by weight, the coefficient of thermal expansion of the glass tends to be large and significantly different from the thermal expansion coefficient of the substrate 1, while if it exceeds 3% by weight, the softening and melting of the glass As the temperature increases, it tends to be difficult to hermetically seal the container 6 at a low temperature. Therefore, the amount of silicon oxide is preferably in the range of 1 to 3% by weight.

If the content of boron oxide is less than 1% by weight, the softening and melting temperature of the glass tends to be high, which makes it difficult to hermetically seal the container 6 at a low temperature. There is a tendency that the chemical resistance is deteriorated and the reliability of hermetic sealing of the container 4 is greatly reduced. Therefore, the amount of boron oxide is preferably in the range of 1 to 6% by weight.

The filler of the cordierite-based compound functions to adjust the coefficient of thermal expansion of the second region 4b of the sealing material 4 and to adjust the fluidity thereof. The thermal expansion coefficient of the second region 4b of the sealing material 4 in which the content of the filler is less than 16% by weight is largely different from the thermal expansion coefficient of the lid 2, and the second region of the sealing material 4 4b tends not to be able to be firmly joined to the lid 2. On the other hand, if it exceeds 30% by weight, the fluidity of the second region 4b of the sealing material 4 decreases, and it tends to be difficult to bond the external lead terminals 3 at low temperatures. Therefore, the filler content is 16-30% by weight
Is preferably within the range.

Further, if the average particle size of the cordierite-based compound filler is less than 3 μm, the second region 4
The fluidity of b tends to decrease, making the hermetic sealing of the container 6 difficult. On the other hand, if it exceeds 9 μm, the mechanical strength of the second region 4b of the sealing material 4 tends to decrease. Therefore,
Cordierite-based compound fillers have an average particle size of 3 to
It is preferred to be in the range of 9 μm.

The bonding and sealing of the insulating base 1 and the lid 2 are performed by the following method. First, a sealing material 4 serving as a first region 4a is previously applied to a bonding region of the insulating base 1 with the lid 2 by using a conventionally known screen printing method or the like. Thereafter, the external lead terminal 3 is connected to the first region 4
a, and by baking at a temperature of about 400 ° C., the sealing material 4 to be the first region 4 a is melt-adhered to the insulating base 1 and the external lead terminals 3 are connected to the first lead 4. It temporarily fixes to the sealing material 4 which becomes the area | region 4a. Next, the cover 2 on which the sealing material 4 serving as the second region 4b has been applied in advance by using a conventionally known screen printing method or the like is replaced with the sealing material 4 serving as the first region 4a and the second region 4b. Are overlapped on the insulating substrate 1 so that the sealing material 4 becomes
The insulating base 1 and the lid 2 are joined by melting and integrating at a temperature of ° C. Thereby, the insulating base 1 and the lid 2
The semiconductor element 5 is hermetically sealed in a container 6 composed of the following, and the external lead terminal 3 is fixed between the insulating base 1 and the lid 2.

Thus, according to the above-described package for accommodating a semiconductor element, the semiconductor element 5
Is bonded and fixed via an adhesive made of glass, resin, brazing material, or the like, and each electrode of the semiconductor element 5 is connected to the external lead terminal 3 by a bonding wire.
The semiconductor element 5 is hermetically accommodated in a container 6 composed of the insulating base 1 and the lid 2 by sandwiching the external lead terminals 3 between the insulating base 1 and the lid 2 and joining them via the sealing material 4. By doing so, a semiconductor device as a final product is completed.

It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. Although the aluminum nitride sintered body has been exemplified, silicon carbide having good thermal conductivity may be used.

[0047]

According to the semiconductor device housing package of the present invention, the thermal expansion coefficient of the first region of the sealing material is 4.5 to 5.5 pp.
m / ° C., the thermal expansion coefficient of the second region is set to 6.0 to 7.5 ppm / ° C. to approximate the thermal expansion coefficient of the external lead terminal, and the external lead terminal is formed between the first region and the second region of such a sealing material. Since the members are sandwiched and joined, a large stress does not occur due to a difference in the coefficient of thermal expansion between them, thereby effectively preventing cracks from entering the sealing material,
It is possible to make the semiconductor device housing package completely hermetically sealed and to operate the semiconductor device housed therein normally and stably for a long period of time.

The thermal expansion coefficient of the sealing material in the second region is set to 6.
Since the thermal expansion coefficient of 0 to 7.5 ppm / ° C was approximated to the coefficient of thermal expansion of the aluminum oxide sintered body having higher mechanical strength than that of the mullite sintered body, the aluminum oxide sintered body was used as the lid. Even if it does, a large stress does not occur between the second region of the sealing material and the lid due to the difference in the coefficient of thermal expansion, and as a result, the thickness of the lid becomes 0.25 m.
m, and the thickness of the semiconductor device housing package can be reduced.

Further, according to the semiconductor device of the present invention, the encapsulant is made of 35 to 55% by weight of phosphorus pentoxide containing no lead oxide, 20 to 40% by weight of tin monoxide, 10 to 20% by weight of zinc oxide, A first region in which a cordierite-based compound is externally added as a filler to a glass component consisting of 2 to 4% by weight of aluminum, 1 to 3% by weight of silicon oxide, and 1 to 6% by weight of boron oxide; 35-55% by weight phosphorus oxide, 20-40 tin oxide
Wt%, zinc oxide 10 ~ 20wt%, aluminum oxide 2 ~
4% by weight, 1 to 3% by weight of silicon oxide and 1 to 3% of boron oxide
Since it is composed of a glass component consisting of 6% by weight and a cordierite-based compound as a filler in a second region where 16-30% by weight is externally added, there is no harm to the human body and no load on the global environment. , And its sealing temperature is 430 ℃
Since the temperature is low, the temperature at which the insulating base and the lid are joined to each other to seal the semiconductor device housing package hermetically can be reduced to a low temperature. As a result, heat for melting the sealing material is generated inside. Even if it acts on the semiconductor element to be housed, the characteristics of the semiconductor element do not deteriorate, and the semiconductor element can be operated normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor element storage package according to the present invention.

[Explanation of symbols]

 1 ... insulating base 1a ... recess 2 ... lid 3 ... external lead terminal 4 ... ······················································································································································ ..Semiconductor elements

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G062 AA08 AA09 AA15 BB09 DA03 DB03 DC03 DD01 DE04 DF05 DF06 EA01 EA10 EB01 EC01 ED01 EE01 EF01 EG01 FA01 FB01 FC01 FD01 FE04 FE05 FE05 FF01 FG01 GA01 F0101 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM08 NN29 PP06

Claims (4)

[Claims] 1. An insulating base having a mounting portion for a semiconductor element, a cover for surrounding the mounting portion and forming a space for accommodating the semiconductor element therein, and the semiconductor element electrically interposed therebetween. A semiconductor element housing package that is formed by joining with a sealing material across an external lead terminal to be connected, and hermetically seals the semiconductor element in the space, wherein the sealing material is provided on the insulating base side. The first region and the second region on the lid side sandwich the external lead terminal, and the first region and the second region of the sealing material have a thermal expansion coefficient of 4.5.
-5.5 ppm / ° C. and 6.0-7.5 ppm / ° C. 2. The sealing material comprises 35 to 55% by weight of phosphorus pentoxide, 20 to 40% by weight of tin monoxide, 10 to 20% by weight of zinc oxide, 2 to 4% by weight of aluminum oxide, and 1 to 3% by weight of silicon oxide.
% And a glass component of 1 to 6% by weight of boron oxide, and the first region and the second region further contain 40 to 45% by weight and 16 to 30% by weight of a cordierite-based compound filler by external addition. The package for accommodating a semiconductor element according to claim 1, wherein the package is added. 3. The package according to claim 2, wherein the filler has an average particle size of 3 to 9 μm. 4. The semiconductor element storage package according to claim 1, wherein the semiconductor element is mounted on the mounting portion and is electrically connected to the external lead terminals.
A semiconductor device, wherein the lid is joined with the sealing material.