JP2002353360A - Container for storing electronic part - Google Patents

Abstract

PROBLEM TO BE SOLVED: To overcome such a problem that heat for melting a sealing material affects and deteriorates characteristics of an electronic part accommodated within a container. SOLUTION: A container for storing an electronic part comprises a insulating substrate 1 having a mounting portion where an electronic part 7 is mounted; a metal frame 2 which surrounds the mounting portion on the insulating substrate 1, forms a space where the electronic part 7 is accommodated therein, and is bonded to the insulating substrate 1 via a bonding member 5 with an external terminal 4, which is electrically connected to the electronic part 7, therebetween; and a metal lid 3 which is seam welded on a top face of the metal frame 2 to seal hermetically the electronic part 7, wherein the bonding member 5 comprises a glass material containing 30 to 40 weight percent of phosphorus pentoxide, 47 to 60 weight percent of tin protoxide, 1 to 6 weight percent of zinic oxide, 1 to 4 weight percent of aluminum oxide, and 1 to 3 weight percent of silicon oxide, and 16 to 45 weight percent of cordierite system compound which is externally added to the glass material as a filler.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for storing electronic components such as semiconductor elements and piezoelectric vibrators in a hermetically sealed manner, and more particularly to a container for welding external leads by welding glass. The present invention relates to an electronic component storage container fixed to the electronic component.

[0002]

2. Description of the Related Art Conventionally, as shown in a sectional view of FIG. 2, an electronic component storage container for storing electronic components such as a semiconductor element and a piezoelectric element is made of aluminum oxide crystal or aluminum nitride sintered body. Made of an electrically insulating material such as a mullite sintered body, has a concave portion for forming a space for accommodating the electronic component 15 at a substantially central portion of the upper surface, and is covered with a sealing material 14 made of glass on the upper surface. An insulating base 11 attached thereto, also made of an electrically insulating material, has a concave portion for forming a space for accommodating an electronic component 15 at a substantially central portion of a lower surface thereof, and a sealing material 14 made of glass is formed on a lower surface. The attached lid 12 and an external lead terminal 13 made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy for electrically connecting the electronic component 15 housed therein to an external electric circuit. And an outer surface on the upper surface of the insulating base 11. Sealing material 14 made of glass which had been previously deposited causes mounting the lead terminal 13
The external lead terminals 13 by melting the
Temporarily fixed to 11, then attach the electronic component 15 such as a semiconductor element to the bottom of the concave portion of the insulating base 11 and connect each electrode of the electronic component 15 to the external lead terminal 13 via a bonding wire, and then The respective sealing members 14 having the insulating base 11 and the lid 12 adhered to the opposing main surfaces are melted and integrated, and the container 16 composed of the insulating base 11 and the lid 12 is sealed. By doing so, it becomes an electronic device as a product.

Conventionally, as the sealing material 14, generally, 56 to 66% by weight of lead oxide, 4 to 14% by weight of boron oxide, 1% by weight of silicon oxide
9 to 19% by weight of a cordierite-based compound as an external additive and 10 to 20% by weight of a tin titanate-based compound as an external additive to a glass component containing 〜6% by weight and 0.5 to 3% by weight of zinc oxide. What was used, such a sealing member
14 mainly contains lead oxide, which is harmful to the human body. The use of lead (free of lead) to which 5 to 10% by weight is added has been studied.

[0004]

However, the tin oxide-zinc oxide-phosphate glass has a softening melting temperature of about 430 ° C.
In recent years, electronic components such as semiconductor elements have recently been reduced in heat resistance with higher density and higher integration. When the electronic components are hermetically housed inside the container formed by joining and the insulating base and the lid, the heat for melting the sealing material acts on the electronic components housed therein, thereby deteriorating the characteristics of the electronic components. However, there has been a problem that the electronic components cannot be operated normally.

[0005] Further, a sealing material obtained by adding 5 to 10% by weight of a β-eucryptite solid solution having a low coefficient of thermal expansion or a fused quartz as a filler to a tin oxide-zinc oxide-phosphoric acid glass as a filler is added to the heat. The expansion coefficient is 8.4 to 9.6 ppm / ° C,
Since the thermal expansion coefficient (4 ppm / ° C.) of the metal material such as an iron-nickel-cobalt alloy that forms the external lead terminal is significantly different, the external lead terminal is sandwiched between the insulating base and the lid to form a sealing material. When joining via a via, stress is generated due to the difference in the coefficient of thermal expansion between the sealing material and the external lead terminal, and the stress acts on the sealing material to crack the sealing material. As a result, the hermetic sealing of the electronic component storage container is easily broken, and the electronic components housed therein cannot be normally and stably operated for a long period of time. .

Therefore, in order to solve the above problem, a filler such as a β-eucryptite solid solution or fused quartz is added to the tin oxide-zinc oxide-phosphate glass by 50% by weight or more by external addition, and the sealing material is used. It is conceivable to match the coefficient of thermal expansion with the coefficient of thermal expansion of the external lead terminals.

However, when 50% by weight or more of a filler such as a β-eucryptite solid solution or fused silica is added to tin oxide-zinc oxide-phosphate glass by external addition, the fluidity of the sealing material is greatly impaired. The reliability of the joint between the insulating base and the lid via the sealing material is degraded, and the hermetic sealing of the electronic component storage container is easily broken. The problem of being unable to operate is induced.

A conventional lead-boric acid-based sealing material is 1M
The dielectric constant of the glass at 12 Hz is as large as 12 or more, and the capacitance between the external lead terminals is increased. With the recent increase in the speed of signals, generation of noise due to the capacitance has become a problem.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to hermetically seal electronic components inside an insulating container comprising an insulating base and a lid, so that the electronic components can be sealed for a long time. An object of the present invention is to provide an electronic component storage container that can be operated normally and stably over a long period of time.

[0010]

According to the present invention, there is provided an electronic component storage container comprising: an insulating base having an electronic component mounting portion on an upper surface;
Surrounding the mounting part, a metal frame body for forming a space for housing the electronic component inside is joined by a joining material with an external lead terminal between which the electronic component is electrically connected,
An electronic component storage container for hermetically sealing an electronic component in a space by joining a metal lid to the upper surface of a metal frame by seam welding, wherein the joining material is phosphorous pentoxide 30 to 40% by weight. A cordierite-based compound as a filler is externally added to a glass component containing 47 to 60% by weight of tin oxide, 1 to 6% by weight of zinc oxide, 1 to 4% by weight of aluminum oxide and 1 to 3% by weight of silicon oxide as a filler. %.

[0011] In the electronic component storage container according to the present invention, the filler added to the bonding material has an average particle diameter of 3 to 9 µm.

According to the electronic component housing of the present invention, the bonding material for bonding the external lead terminals between the insulating base and the metal frame is 25 to 35% by weight of phosphorus pentoxide and 40 to 60% by weight of tin monoxide. %,
16 to 45% by weight of a glass component containing 1 to 6% by weight of zinc oxide, 1 to 4% by weight of aluminum oxide, and 1 to 3% by weight of silicon oxide by adding a cordierite compound as a filler to the glass component
Because of the addition, the thermal expansion coefficient of the bonding material is 5 to 7 ppm / ° C., which is close to the thermal expansion coefficient of the external lead terminal.
As a result, when the insulating base and the metal frame are joined to each other with the external lead terminal interposed therebetween through the joining material, the difference in the thermal expansion coefficient between the joining material and the external lead terminal causes the difference. Stress does not occur, which effectively prevents cracks in the bonding material and ensures that the electronic components housing is completely airtightly sealed and the electronic components housed inside are normal and stable for a long time. Can be operated.

Further, the amount of the filler to be added is 30 to 40 phosphorus pentoxide.
Wt%, tin monoxide 47-60 wt%, zinc oxide 1-6 wt%, aluminum oxide 1-4 wt% and silicon oxide 1-
Since the glass component containing 3% by weight was externally added to a small amount of 16 to 45% by weight, the fluidity of the bonding material was not hindered by the added filler, and as a result,
The bonding reliability between the insulating base and the metal frame via the bonding material is extremely high, and the semiconductor element can be normally and stably operated for a long period of time by ensuring the hermetic sealing of the semiconductor element.

Further, the bonding material has a dielectric constant at 1 MHz as low as about 8, making it possible to reduce the capacitance between the external lead terminals and to prevent malfunction due to noise during operation of the semiconductor element. This allows the semiconductor element to operate normally and stably for a long period of time. Further, since the bonding material does not contain lead, it does not harm the human body and can be used with confidence.

Further, according to the electronic component storage container of the present invention, in the above configuration, the average particle diameter of the filler is 3 to 9 μm.
With m, the fluidity of the bonding material and the sealing material does not decrease, so that the hermetic sealing of the container does not become difficult, and the strength does not decrease and the hermetic reliability of the container does not decrease.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an example of an embodiment in which the electronic component housing of the present invention is applied to a semiconductor device housing package for housing a semiconductor device. In this figure, 1 is an insulating base, 2 is a metal frame, 3 is a metal lid, 4
Is an external lead terminal, and 5 is a bonding material. These components mainly constitute a container for accommodating an electronic component of the present invention, and a semiconductor device is obtained by accommodating a semiconductor element 7 in the container 6.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body or an aluminum nitride sintered body, and has a mounting portion 1a on which the semiconductor element 7 is mounted. The semiconductor element 7 is bonded and fixed via an adhesive made of glass, resin, brazing material or the like.

If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, an organic binder, a solvent, a plasticizer, and a dispersant suitable for a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. The mixture is added and mixed to form a slurry, and the slurry is formed into a sheet by using a sheet forming method such as a doctor blade method or a calender roll method, which is conventionally known, to obtain a ceramic green sheet (ceramic green sheet). Thereafter, the ceramic green sheets are subjected to appropriate punching processing, and a plurality of the sheets are laminated and fired at a high temperature of about 1600 ° C., or an appropriate organic solvent or solvent is added to a raw material powder such as aluminum oxide and mixed. The raw material powder is adjusted and formed into a predetermined shape by press molding technology. It is made by firing the feature at a temperature of about 1600 ° C.

One end of an external lead terminal 4 made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy is temporarily fixed to the upper surface of the insulating base 1 via a bonding material 5. The external lead terminal 4 is manufactured by forming an ingot of an iron-nickel alloy or the like into a predetermined plate shape by using a conventionally known rolling method and punching method.

The external lead terminal 4 serves to connect the semiconductor element 7 housed therein to a wiring conductor (not shown) of an external electric circuit board, and one end of each of the electrodes of the semiconductor element 7 is provided with a bonding wire 8. The semiconductor element 7 is electrically connected to the external electric circuit by connecting the external lead terminal 4 to the wiring conductor of the external electric circuit board.

Further, the insulating base 1 to which the external lead terminals 4 are temporarily fixed has a metal frame 2 on the upper surface thereof and a bonding material 5 on the lower surface of the metal frame 2 and a bonding material 5 on the upper surface of the insulating base 1. It is joined by melting and integrating the joined joining material 5,
As a result, a space for accommodating the semiconductor element 7 is formed inside the container including the insulating base 1 and the metal frame 2, and the external lead terminals 4 are fixed between the insulating base 1 and the metal frame 2.

The metal frame 2 is made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy. A predetermined plate is formed from an ingot such as an iron-nickel alloy by using a conventionally known rolling method and stamping method. It is manufactured by forming into a shape. If a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, is applied to the surface to a thickness of 1 to 20 μm by a plating method, oxidation corrosion of the metal frame 2 can be effectively prevented. In addition, the seam welding between the metal frame 2 and the metal lid 4, which will be described later, can be improved.
Therefore, the metal frame 2 is preferably coated with a metal such as nickel or gold to a thickness of 1 to 20 μm on its surface by plating.

The joining material 5 for joining the insulating base 1 and the metal frame 2 is composed of 30 to 40% by weight of phosphorus pentoxide, 47 to 60% by weight of tin monoxide, 1 to 6% by weight of zinc oxide, and 1 to 6% by weight of aluminum oxide. A cordierite compound is added as a filler to a glass component containing 4% by weight and 1 to 3% by weight of silicon oxide by external addition to 16 to 45%.
% By weight, and an organic binder, a plasticizer, a solvent, etc. are added and mixed to form a glass paste,
This glass paste is applied to each of the upper surface of the insulating base 1 and the lower surface of the metal frame 2 by a conventionally known screen printing method.

The bonding material 5 contains 30 to 40% by weight of phosphorus pentoxide, 47 to 60% by weight of tin monoxide, 1 to 6% by weight of zinc oxide, 1 to 4% by weight of aluminum oxide and 1 to 3% by weight of silicon oxide. Since the cordierite compound was added as a filler to the glass component by 16 to 45% by weight, the thermal expansion coefficient was 5 to 7 ppm / ° C.
When the insulating substrate 1 and the metal frame 2 are joined to each other with the external lead terminal 4 interposed therebetween via the joining material 5, there is a gap between the joining material 5 and the external lead terminal 4. No stress is generated due to the difference between the respective coefficients of thermal expansion, which effectively prevents cracks in the bonding material 5 and completely hermetically seals the semiconductor device housing package to be housed inside. Semiconductor device 7 can be operated normally and stably for a long period of time.

Further, the amount of the filler to be added is 30 to 40 phosphorus pentoxide.
Wt%, tin monoxide 47-60 wt%, zinc oxide 1-6 wt%, aluminum oxide 1-4 wt% and silicon oxide 1-
Since the addition amount is as small as 16 to 45% by weight to the glass component containing 3% by weight, the fluidity of the bonding material 5 is not hindered by the added filler, and as a result, the bonding material 5 The bonding reliability between the insulating base 1 and the metal frame 2 via the substrate becomes extremely high, and the hermetic sealing of the semiconductor element 7 is ensured to keep the semiconductor element 7
And it can be operated stably.

Furthermore, the bonding material 5 has a dielectric constant at 1 MHz as low as about 8, making it possible to reduce the capacitance between the external lead terminals 3 and prevent malfunction due to noise during operation of the semiconductor element 7. It is possible to operate the semiconductor element 7 normally and stably for a long period of time. In addition, since the bonding material 5 does not contain lead, it does not harm the human body and can be used with confidence.

The joining material 5 is made of a low-melting glass not containing lead. The composition range of the joining material 5 is determined to be 30 to 40% by weight of phosphorus pentoxide and 47 to 50% by weight of tin monoxide according to experiments performed by the present inventors. A glass component containing 60% by weight, zinc oxide 1 to 6% by weight, aluminum oxide 1 to 4% by weight, and silicon oxide 1 to 3% by weight with a cordierite compound added as a filler to the glass component in an external addition of 16 to 45% by weight. And the average particle size of the cordierite-based compound filler in the bonding material 5 is 3 to 9 μm.

When the glass having the above composition is used for the bonding material 5, if the content of phosphorus pentoxide (P ₂ O ₅ ) is less than 30% by weight, the softening and melting temperature of the glass increases, and the package is hermetically sealed at a low temperature. When the content exceeds 40% by weight, the chemical resistance of the bonding material 5 is reduced, and the reliability of hermetic sealing of the package is significantly reduced. Therefore, phosphorus pentoxide is specified in the range of 30 to 40% by weight.

The amount of tin monoxide (SnO) is 47%.
If the amount is less than 10% by weight, the softening and melting temperature of the glass increases,
The hermetic sealing of the package at low temperatures tends to be difficult, and if it exceeds 60% by weight, the chemical resistance of the bonding material 5 decreases,
The reliability of hermetic sealing of the package tends to be greatly reduced. Therefore, tin monoxide is specified in an amount in the range of 47-60% by weight.

Further, when the amount of zinc oxide (ZnO) is less than 1% by weight, the softening and melting temperature of the glass tends to be high, and it becomes difficult to hermetically seal the package at a low temperature. If the ratio exceeds, the crystallization of the glass proceeds and the fluidity decreases, and it tends to be difficult to hermetically seal the package via the bonding material 5. Therefore, the amount of zinc oxide is specified in the range of 1 to 6% by weight.

If the amount of aluminum oxide (Al ₂ O ₃ ) is less than 1% by weight, the moisture resistance of the glass decreases, and the reliability of hermetic sealing of the package via the bonding material 5 tends to decrease. When the content exceeds 4% by weight, the softening and melting temperature of the glass becomes high, and it becomes difficult to hermetically seal the package at a low temperature. Therefore, the amount of aluminum oxide is specified in the range of 1 to 4% by weight.

If the amount of silicon oxide (SiO ₂ ) is less than 1% by weight, the thermal expansion coefficient of the bonding material 5 increases, and the thermal expansion coefficients of the insulating base 1 and the metal frame 2 and the external lead terminals 4 The coefficient of thermal expansion is greatly different, and the reliability of hermetic sealing of the package tends to decrease.
If the temperature exceeds the range, the softening and melting temperature of the glass tends to be high, and it is difficult to hermetically seal the package at a low temperature. Therefore, the amount of silicon oxide is specified in the range of 1 to 3% by weight.

Further, when the amount of the cordierite compound added as a filler is less than 16% by weight, the strength of the glass of the bonding material 5 is reduced, and the reliability of hermetic sealing of the package is greatly reduced. There is also 45% by weight
Is exceeded, the coefficient of thermal expansion of the bonding material 5 decreases, and the coefficient of thermal expansion of the insulating base 1 and the metal frame 2 and the external lead terminals 4
Significantly differs from the thermal expansion coefficient of the package, and the reliability of hermetic sealing of the package tends to decrease. Therefore, the amount of the cordierite-based compound is specified in the range of 16 to 45% by weight.

If the cordierite compound added as a filler has an average particle size of less than 3 μm, the fluidity of the bonding material 5 is reduced, and the package may be hermetically sealed via the bonding material 5. Tends to be difficult, 9 μm
If the ratio exceeds the above range, the strength of the bonding material 5 tends to decrease, and the reliability of hermetic sealing of the package tends to greatly decrease. Therefore, the cordierite-based compound preferably has an average particle size in the range of 3 to 9 μm.

Further, the metal frame 2 is joined to the metal lid 3 by seam welding on the upper surface, whereby the semiconductor element 7 is hermetically sealed inside the package.

The metal cover 3 is made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy. When the metal cover 3 is made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy, external lead terminals are used. 4 is manufactured by the same method as the method of manufacturing. In addition, if a metal having good conductivity and excellent corrosion resistance made of nickel, gold, or the like is coated on the surface to a thickness of 1 to 20 μm by a plating method, oxidation corrosion of the metal can be effectively prevented and the metal can be effectively prevented. Seam welding between the frame 2 and the metal lid 3 can be made favorable. Therefore, it is preferable that a metal such as nickel or gold is applied to the surface of the metal lid 3 to a thickness of 1 to 20 μm by a plating method.

According to the package for accommodating a semiconductor element of the present invention, since the metal frame 2 and the metal lid 3 are joined by seam welding, when the semiconductor element 7 is hermetically accommodated in the package for accommodating a semiconductor element. The inside of the container 6 can be kept at 200 ° C. or lower, the characteristics of the semiconductor element 7 do not deteriorate, and the semiconductor element 7 can operate normally and stably for a long period of time. In addition, since the metal frame 2 and the metal lid 3 are joined by seam welding, the semiconductor element 7 is electromagnetically shielded inside the container 6, and as a result, external noise is generated by the metal frame 2 and the metal lid 3. The semiconductor device inside the container 6 can be normally and stably operated for a long period of time.

Thus, according to the above-mentioned package for accommodating a semiconductor element, the external lead terminal 4 is sandwiched between the insulating base 1 and the metal frame 2 via the joining material 5 and further joined.
The semiconductor element 7 is bonded and fixed to the mounting portion of the insulating base 1 via an adhesive such as glass, resin, or brazing material, and each electrode of the semiconductor element 7 is connected to the external lead terminal 4 by a bonding wire 8. By sealing the metal lid 3 on the upper surface of the metal frame 2 by seam welding, the semiconductor element 7 is hermetically sealed inside a package composed of the insulating base 1, the metal frame 2 and the metal lid 3. Thus, a semiconductor device as a final product is completed.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. As an example, an aluminum oxide-based sintered body is exemplified, but when heat dissipation of a container is required, an aluminum nitride-based sintered body having high thermal conductivity may be used.

[0040]

According to the electronic component storage container of the present invention,
The bonding material for bonding the external lead terminals between the insulating base and the metal frame is 25 to 35% by weight of phosphorus pentoxide, 40 to 60% by weight of tin monoxide, 1 to 6% by weight of zinc oxide, and 1 to 4 of aluminum oxide. Since the cordierite-based compound is added as a filler to the glass component containing 16% to 45% by weight as an external additive to the glass component containing 1% to 3% by weight of silicon oxide, the thermal expansion coefficient of the bonding material is reduced. 5-7 ppm / approximating the expansion coefficient
° C, and as a result, when the insulating base and the metal frame are joined with the external lead terminal interposed therebetween through the joining material,
No stress is generated between the bonding material and the external lead terminals due to the difference in the coefficient of thermal expansion between the bonding material and the external lead terminal. This effectively prevents cracks from being generated in the bonding material, and prevents the electronic component storage container from being cracked. It is possible to normally and stably operate the electronic components housed therein with the hermetic sealing being complete.

Further, the amount of the filler to be added is 30 to 40 phosphorus pentoxide.
Wt%, tin monoxide 47-60 wt%, zinc oxide 1-6 wt%, aluminum oxide 1-4 wt% and silicon oxide 1-
Since the glass component containing 3% by weight was externally added to a small amount of 16 to 45% by weight, the fluidity of the bonding material was not hindered by the added filler, and as a result,
The bonding reliability between the insulating base and the metal frame via the bonding material is extremely high, and the semiconductor element can be normally and stably operated for a long period of time by ensuring the hermetic sealing of the semiconductor element.

Further, the bonding material has a dielectric constant as low as about 8 at 1 MHz, so that the capacitance between external lead terminals can be reduced, and malfunction due to noise during operation of the semiconductor element can be prevented. This allows the semiconductor element to operate normally and stably for a long period of time. Further, since the bonding material does not contain lead, it does not harm the human body and can be used with confidence.

According to the electronic component container of the present invention, since the average particle size of the filler is 3 to 9 μm,
The fluidity of the joining material and the sealing material does not decrease, so that the hermetic sealing of the container does not become difficult, and the strength does not decrease and the hermetic reliability of the container does not decrease.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage container according to the present invention.

FIG. 2 is a sectional view showing a conventional electronic component storage container.

[Explanation of symbols]

 1 ... Insulating base 1a ... Mounting part 2 ... Metal frame 3 ... Metal lid 4 ... ····································································· Electronic parts (semiconductor elements)

Claims (2)

[Claims] 1. An insulating substrate having an electronic component mounting portion on an upper surface, a metal frame for surrounding the mounting portion and forming a space for accommodating the electronic component inside the insulating base, and the electronic component being interposed therebetween. The electronic component is hermetically sealed in the space by joining a metal cover to the upper surface of the metal frame by seam welding by joining the external lead terminals to be electrically connected to each other with a bonding material. Wherein the bonding material is 30 to 40% by weight of phosphorus pentoxide and 47 to 6% of tin monoxide.
0% by weight, zinc oxide 1-6% by weight, aluminum oxide 1
A container for electronic component storage, comprising a glass component containing 1 to 4% by weight and 1 to 3% by weight of silicon oxide and 16 to 45% by weight of a cordierite-based compound as an external additive. 2. The electronic component storage container according to claim 1, wherein the filler has an average particle size of 3 to 9 μm.