JPH08505434A - プラズマ補助高速電子ビーム蒸発用の装置 - Google Patents
プラズマ補助高速電子ビーム蒸発用の装置Info
- Publication number
- JPH08505434A JPH08505434A JP6509492A JP50949294A JPH08505434A JP H08505434 A JPH08505434 A JP H08505434A JP 6509492 A JP6509492 A JP 6509492A JP 50949294 A JP50949294 A JP 50949294A JP H08505434 A JPH08505434 A JP H08505434A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- plasma
- anode
- support
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005566 electron beam evaporation Methods 0.000 title claims abstract description 9
- 238000010894 electron beam technology Methods 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000010584 magnetic trap Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000006200 vaporizer Substances 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 239000003779 heat-resistant material Substances 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 30
- 239000011248 coating agent Substances 0.000 abstract description 25
- 238000001704 evaporation Methods 0.000 abstract description 25
- 230000008020 evaporation Effects 0.000 abstract description 23
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000006185 dispersion Substances 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3132—Evaporating
- H01J2237/3137—Plasma-assisted co-operation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4235199.5 | 1992-10-19 | ||
| DE4235199A DE4235199C1 (enExample) | 1992-10-19 | 1992-10-19 | |
| PCT/DE1993/000750 WO1994009176A1 (de) | 1992-10-19 | 1993-08-18 | Einrichtung zum plasmagestützten elektronenstrahl-hochratebedampfen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08505434A true JPH08505434A (ja) | 1996-06-11 |
Family
ID=6470795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6509492A Pending JPH08505434A (ja) | 1992-10-19 | 1993-08-18 | プラズマ補助高速電子ビーム蒸発用の装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5635087A (enExample) |
| EP (1) | EP0666933B1 (enExample) |
| JP (1) | JPH08505434A (enExample) |
| AT (1) | ATE139268T1 (enExample) |
| DE (1) | DE4235199C1 (enExample) |
| WO (1) | WO1994009176A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008266732A (ja) * | 2007-04-20 | 2008-11-06 | Ulvac Japan Ltd | 真空蒸着装置 |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4440521C1 (de) * | 1994-11-12 | 1995-11-02 | Rowo Coating Ges Fuer Beschich | Vorrichtung zum Beschichten von Substraten mit einem Materialdampf im Unterdruck oder Vakuum |
| DE19546827C2 (de) * | 1995-12-15 | 1999-03-25 | Fraunhofer Ges Forschung | Einrichtung zur Erzeugung dichter Plasmen in Vakuumprozessen |
| DE19548160C1 (de) * | 1995-12-22 | 1997-05-07 | Fraunhofer Ges Forschung | Verfahren zur Herstellung organisch modifizierter Oxid-, Oxinitrid- oder Nitridschichten durch Vakuumbeschichtung und danach beschichtetes Substrat |
| DE19612344C1 (de) * | 1996-03-28 | 1997-08-21 | Fraunhofer Ges Forschung | Einrichtung zur plasmaaktivierten Hochratebedampfung |
| DE19612345C1 (de) * | 1996-03-28 | 1997-01-16 | Fraunhofer Ges Forschung | Verfahren zum plasmaaktivierten Hochgeschwindigkeits-Bedampfen großflächiger Substrate |
| CA2241678C (en) | 1997-06-26 | 2007-08-28 | General Electric Company | Silicon dioxide deposition by plasma activated evaporation process |
| DE19814805A1 (de) * | 1998-04-02 | 1999-10-07 | Bosch Gmbh Robert | Beschichtungsverfahren eines Wischergummis |
| DE19841012C1 (de) * | 1998-09-08 | 2000-01-13 | Fraunhofer Ges Forschung | Einrichtung zum plasmaaktivierten Bedampfen im Vakuum |
| DE19902146C2 (de) * | 1999-01-20 | 2003-07-31 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur gepulsten Plasmaaktivierung |
| RU2186874C2 (ru) * | 1999-03-16 | 2002-08-10 | Российский федеральный ядерный центр - Всероссийский научно-исследовательский институт технической физики | Электродуговой испаритель металлов |
| US6261694B1 (en) | 1999-03-17 | 2001-07-17 | General Electric Company | Infrared reflecting coatings |
| US6365016B1 (en) | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
| US6426125B1 (en) | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
| US6517687B1 (en) | 1999-03-17 | 2003-02-11 | General Electric Company | Ultraviolet filters with enhanced weatherability and method of making |
| US6420032B1 (en) | 1999-03-17 | 2002-07-16 | General Electric Company | Adhesion layer for metal oxide UV filters |
| DE19943379A1 (de) * | 1999-09-10 | 2001-03-15 | Fraunhofer Ges Forschung | Verfahren zur Herstellung metallisierter Kunststoffolie für Kondensatoren |
| US6376064B1 (en) | 1999-12-13 | 2002-04-23 | General Electric Company | Layered article with improved microcrack resistance and method of making |
| DE10018639C1 (de) * | 2000-04-14 | 2001-05-17 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur ionengestützten Hochratebedampfung |
| EP1409762A4 (en) * | 2000-05-23 | 2007-02-28 | Univ Virginia | METHOD AND DEVICE FOR PLASMA-BASED DEPOSITION IN A VACUUM |
| RU2190036C2 (ru) * | 2000-07-13 | 2002-09-27 | Владикавказский технологический центр "БАСПИК" | Способ вакуумного напыления пленок и устройство для его осуществления |
| DE10129507C2 (de) * | 2001-06-19 | 2003-07-17 | Fraunhofer Ges Forschung | Einrichtung zur plasmaaktivierten Bedampfung großer Flächen |
| RU2207399C2 (ru) * | 2001-08-07 | 2003-06-27 | Институт проблем машиноведения РАН | Вакуумное дуговое устройство |
| AU2003295851A1 (en) * | 2002-11-21 | 2004-06-18 | University Of Virginia Patent Foundation | Bond coat for a thermal barrier coating systemand related method thereof |
| US20080131611A1 (en) * | 2003-07-29 | 2008-06-05 | Hass Derek D | Method for Application of a Thermal Barrier Coating and Resultant Structure Thereof |
| DE102006027853B4 (de) * | 2006-06-16 | 2012-06-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen eines Plasmas sowie Verwendung derselben |
| US8784512B2 (en) * | 2007-08-13 | 2014-07-22 | University Of Virginia Patent Foundation | Thin film battery synthesis by directed vapor deposition |
| DE102007061418A1 (de) | 2007-12-20 | 2009-07-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Erzeugen eines Hohlkatoden-Bogenentladungsplasmas und zum Regeln der Aktivierung von Materialdampfpartikeln, die dem Hohlkatoden-Bogenentladungsplasma ausgesetzt werden |
| EP2401232B1 (en) * | 2009-02-24 | 2016-01-06 | University Of Virginia Patent Foundation | Directed vapor deposition assisted by a coaxial hollow cathode plasma, and related method thereof |
| DE102009034532A1 (de) * | 2009-07-23 | 2011-02-03 | Msg Lithoglas Ag | Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat |
| WO2013091927A1 (de) | 2011-12-19 | 2013-06-27 | Fraunhofer-Ges. Zur Förderung Der Angewandten Forschung E.V. | Vorrichtung zum erzeugen eines hohlkathodenbogenentladungsplasmas |
| US9793098B2 (en) | 2012-09-14 | 2017-10-17 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| US10056237B2 (en) | 2012-09-14 | 2018-08-21 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| US9412569B2 (en) | 2012-09-14 | 2016-08-09 | Vapor Technologies, Inc. | Remote arc discharge plasma assisted processes |
| CA2867451C (en) * | 2013-10-28 | 2021-06-29 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| US9460925B2 (en) | 2014-11-05 | 2016-10-04 | Solarcity Corporation | System and apparatus for efficient deposition of transparent conductive oxide |
| DE102015101294A1 (de) | 2015-01-29 | 2016-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zum Erzeugen eines Hohlkathodenbogenentladungsplasmas |
| US10724133B2 (en) * | 2016-09-14 | 2020-07-28 | Raytheon Technologies Corporation | EBPVD columnated vapor stream |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD204947A1 (de) | 1982-04-20 | 1983-12-14 | Manfred Neumann | Einrichtung zum elektronenstrahlbedampfen breiter baender |
| US4514437A (en) | 1984-05-02 | 1985-04-30 | Energy Conversion Devices, Inc. | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
| US4926791A (en) * | 1987-04-27 | 1990-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Microwave plasma apparatus employing helmholtz coils and ioffe bars |
| JPS63274762A (ja) | 1987-05-01 | 1988-11-11 | Ulvac Corp | 反応蒸着膜の形成装置 |
| JPH0215174A (ja) * | 1988-07-01 | 1990-01-18 | Canon Inc | マイクロ波プラズマｃｖｄ装置 |
| JP2670623B2 (ja) | 1988-09-19 | 1997-10-29 | アネルバ株式会社 | マイクロ波プラズマ処理装置 |
| US4951604A (en) | 1989-02-17 | 1990-08-28 | Optical Coating Laboratory, Inc. | System and method for vacuum deposition of thin films |
| DE4203632C2 (de) | 1992-02-08 | 2003-01-23 | Applied Films Gmbh & Co Kg | Vakuumbeschichtungsanlage |
| US5364666A (en) | 1993-09-23 | 1994-11-15 | Becton, Dickinson And Company | Process for barrier coating of plastic objects |
-
1992
- 1992-10-19 DE DE4235199A patent/DE4235199C1/de not_active Expired - Fee Related
-
1993
- 1993-08-18 AT AT93918893T patent/ATE139268T1/de not_active IP Right Cessation
- 1993-08-18 US US08/416,869 patent/US5635087A/en not_active Expired - Fee Related
- 1993-08-18 JP JP6509492A patent/JPH08505434A/ja active Pending
- 1993-08-18 WO PCT/DE1993/000750 patent/WO1994009176A1/de not_active Ceased
- 1993-08-18 EP EP93918893A patent/EP0666933B1/de not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008266732A (ja) * | 2007-04-20 | 2008-11-06 | Ulvac Japan Ltd | 真空蒸着装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0666933B1 (de) | 1996-06-12 |
| DE4235199C1 (enExample) | 1993-04-22 |
| US5635087A (en) | 1997-06-03 |
| EP0666933A1 (de) | 1995-08-16 |
| ATE139268T1 (de) | 1996-06-15 |
| WO1994009176A1 (de) | 1994-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08505434A (ja) | プラズマ補助高速電子ビーム蒸発用の装置 | |
| US5656141A (en) | Apparatus for coating substrates | |
| US7300559B2 (en) | Filtered cathodic arc deposition method and apparatus | |
| US4448802A (en) | Method and apparatus for evaporating material under vacuum using both an arc discharge and electron beam | |
| JP4689843B2 (ja) | 矩形陰極アーク源およびアークスポットの指向方法 | |
| US9761424B1 (en) | Filtered cathodic arc method, apparatus and applications thereof | |
| JPH0477072B2 (enExample) | ||
| JP5150626B2 (ja) | 電子ビーム蒸発装置 | |
| JP4364950B2 (ja) | プラズマ処理装置 | |
| TWI390574B (zh) | 線性電漿電子源及其製造方法 | |
| CN102808155A (zh) | 电子轰击式蒸发源系统 | |
| US5466941A (en) | Negative ion sputtering beam source | |
| CN101903969A (zh) | 线性电子源和使用线性电子源的蒸发器以及电子源的应用 | |
| JP3481953B2 (ja) | 基板をコーティングするための装置 | |
| US5885357A (en) | Process and device for coating a substrate surface with vaporized inorganic material | |
| JPH06212433A (ja) | 真空室内で基板を被覆する装置及び方法 | |
| US3544763A (en) | Apparatus for the evaporation of materials in a vacuum | |
| JP3958869B2 (ja) | ＭｇＯ膜形成方法およびパネル | |
| JP3406769B2 (ja) | イオンプレーティング装置 | |
| Iqbal et al. | An electromagnetically focused electron beam line source | |
| JP3958870B2 (ja) | 真空成膜装置 | |
| KR100948547B1 (ko) | 고진공 마그네트론 스퍼터링 건 | |
| JP4065725B2 (ja) | ピアス式電子銃およびこれを備える真空蒸着装置 | |
| JP3431174B2 (ja) | サブストレートのコーティング装置 | |
| JPS6331550B2 (enExample) |