JPH0841630A - Formation of thin film and device therefor - Google Patents

Abstract

PURPOSE:To prevent the defective traveling of a substrate and to obtain a thin film uniform in thickness in good yield by striking a particle to discharge a charged electron against the substrate deposited with a magnetic particle. CONSTITUTION:A magnetic alloy 7 in a crucible 6 is irradiated with an electron beam, and hence the particle of the alloy 7 is vaporized and deposited on a substrate 3 in contact with a cooling can roll 1. A part of the electron beam is expanded and scattered in this thin film forming process, a part of the electrons are adhered to the substrate 3 to electrostatically charge the substrate 3, and the traveling of the substrate 3 is disturbed. A shutter 22 is opened in this stage, and a discharging particle 12 is struck against a magnetic alloy film on the substrate 3 through a feed pipe 16. Consequently, the charged electron is transferred to the discharging particle 12 side, and the charged electron on the magnetic alloy film is removed. Accordingly, the defective traveling of the substrate 3 is avoided. The discharging particle 12 is preferably positively charged particle or a particle consisting of a conductive material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique used for manufacturing a magnetic recording medium in which a metal film (magnetic film and / or back coat film) is provided on a support.

[0002]

BACKGROUND OF THE INVENTION In a magnetic recording medium such as a magnetic tape, a magnetic layer provided on a non-magnetic support is not a coating type using a binder resin, but a binder resin. It is well known that a metal thin film type that is not used has been proposed.

That is, there has been proposed a magnetic recording medium having a magnetic layer formed by a wet plating means such as electroless plating, or a dry plating means such as vacuum deposition, sputtering or ion plating. Since the magnetic recording medium of this type has a high packing density of magnetic material, it is suitable for high-density recording. In particular, a means for forming a magnetic film by means of irradiating with an electron beam to evaporate and adhere is said to be preferable because the film forming rate is faster than that by sputtering.

A magnetic recording medium manufacturing apparatus using such a vapor deposition means is generally constructed as shown in FIG. In FIG. 3, 31 is a cooling can roll, 32 is
a is polyethylene terephthalate (PET) film 3
3 is a supply side roll, 32b is a PET film 33 winding side roll, 34 is a shielding plate, 35 is a crucible, 36 is a magnetic alloy, and 37 is a vacuum container.

Then, after evacuating the inside of the vacuum container 37 to a predetermined degree of vacuum, the electron gun 38 is operated to heat and evaporate the magnetic alloy 36 in the crucible 35, and the magnetic alloy is applied to the PET film 33. A magnetic recording medium is manufactured by depositing 36. By the way, the beam emitted from the electron gun 38 is scattered as it goes away from the electron gun, and the scattered electrons are attached to the PET film 33, and the traveling property of the PET film 33 is deteriorated (disturbed) by the electrification of the electrons, and in a severe case. In some cases, the PET film 33 sticks to the cooling can roll 31 and cannot run.

[0006]

DISCLOSURE OF THE INVENTION An object of the present invention is to provide a technique for improving the running failure of a support due to the electrification of electrons and for forming a film with a high yield. An object of the present invention is a thin film forming method in which a beam is irradiated from a beam irradiation means, and particles evaporated by the beam are deposited on a support, and electrostatic neutralizing particles of electrons charged on the support on which the particles are deposited are charged. It is achieved by a thin film forming method characterized by applying.

In particular, it is a thin film forming method for irradiating a metal source with a beam from a beam irradiating means and depositing evaporated metal particles on a support running along the cooling can roll. It is achieved by a method for forming a thin film, characterized in that static-eliminating particles are applied to the thin film forming surface side of a support in the course of traveling along. A thin film forming apparatus comprising a beam irradiating means and a support on which a beam is irradiated from the beam irradiating means and vaporized particles are deposited, and the charge removal property of electrons charged on the support on which the particles are deposited. This is achieved by a thin film forming apparatus characterized in that a supply means for supplying particles is provided.

In particular, it comprises a cooling can roll, a support, a traveling means for this support, a beam irradiating means, and a supplying means for supplying static-eliminating particles, and the beam from the beam irradiating means is a metal. The metal particles, which are irradiated to the source and evaporated, are configured to be deposited on a support that runs along the cooling can rolls, and the support on which the metal particles are deposited is configured to be supplied with static-eliminating particles. And a thin film forming apparatus.

In the above invention, the charge-removing particles are preferably positively charged particles or particles made of a conductive material. That is, if the support is positively charged or made of a conductive material, the electrons charged in the support can be efficiently removed. Therefore, from such a point of view, it is preferable to provide a charging means for positively charging the charge eliminating particles.

The particles may have a size of about 0.1 to 5 mm, and the shape may be spherical or round. Also, it has been stated that it is preferable that the particles are made of a conductive material, but if positively charged, not only a conductive material such as iron, but also rice, soybeans, carbon,
It may be made of glass or organic resin. The supply means for supplying the static-eliminating particles is a storage container for storing the static-eliminating particles, a shutter device for supplying / stopping the static-eliminating particles from the storage container, and traveling along the cooling can roll from the storage container. It can be configured to include a first guide means for guiding the static eliminator particles toward the support and a second guide means for collecting the static eliminator particles hitting the support traveling along the cooling can roll. .

In particular, the supply means for supplying the charge-eliminating particles is
It is preferable that the guide means is configured so that the charge-eliminating particles fall from the upper side to the lower side, since no special transportation means is required. However, in this case, the charge-eliminating particles may be clogged while falling from the upper side to the lower side. Therefore, it is preferable to provide the vibration applying means in the path on the way.

According to the thin film forming apparatus configured as described above, even if scattered electrons from the electron beam irradiated toward the target position adhere to the support during the thin film forming operation, this is a static elimination property. The particles are removed, and the running property of the support does not decrease due to the electrification (electrostatic charge) of electrons, and a thin film is formed neatly on the running support.

[0013]

1 and 2 show an embodiment of a thin film forming apparatus of the present invention. FIG. 1 is a schematic view of the whole, and FIG. 2 is a schematic view of a main part. In each drawing, 1 is a cooling can roll, 2a is a non-magnetic and insulating support (for example, polyester such as PET, polyamide, polyimide, polysulfone, polycarbonate, olefin resin such as polypropylene,
Supply side roll of polymer material 3 such as cellulose type resin and vinyl chloride type resin, 2b is roll on the winding side of the support 3, 4 is a shielding plate, 5 is an oxygen gas introducing pipe, 6 is a crucible,
7 is a magnetic alloy contained in the crucible 6 (for example, F
In addition to metals such as e, Co, and Ni, Co-Ni alloys and Co
-Pt alloy, Co-Ni-Pt alloy, Fe-Co alloy,
Fe-Ni alloy, Fe-Co-Ni alloy, Fe-Co-
B alloy, Co-Ni-Fe-B alloy, Co-Cr alloy,
Or those containing a metal such as Al),
8 is an electron gun, 9 is a vacuum chamber, 10 is a solenoid, and 11 is an ion bombardment device.

A detailed description of the structure of these parts will be omitted. Reference numeral 12 is a neutralizing particle having a diameter of 3 mm and made of conductive carbon having a density of 1.4 g / cm ³ . The static-eliminating particles 12 are connected to a vacuum pump, and the vacuum chamber 9
The first container 1 evacuated to the same degree of vacuum as the inside
3 is filled. Then, when the valve 14 is opened, it falls into the second container 15 located therebelow. Of course, the second container 15 is also connected to a vacuum pump so that the second container 15 can be evacuated to a vacuum degree similar to the vacuum degree in the vacuum chamber 9. 16 is a supply pipe,
The tip of the supply pipe 16 is provided so as to correspond to the upper left portion of the cooling can roll 1. 17 is a collection plate, 1
8 is a recovery pipe connected to the recovery plate 17,
Reference numeral 9 is a third container to which the end of the recovery pipe 18 is connected, and 20 is a fourth container connected to the third container 19 via a valve 21. Reference numeral 22 is a shutter provided in the middle of the supply pipe 16, 23 is a hammer arm provided in the second container 15, 24 is a gear, 25 is a viewing window, and 26 is a leak valve.

The manufacture of a metal thin film type magnetic recording medium using the thin film forming apparatus (magnetic recording medium manufacturing apparatus) configured as described above will be described. First, the inside of the vacuum chamber 9 is evacuated to a predetermined vacuum degree. And the supply side roll 2
It is fed from a, is attached to the cooling can roll 1, and the support 3 is wound on the winding side roll 2b.
In this state, an electron beam is emitted from the electron gun 8 as shown by an arrow, and the Co—Ni magnetic alloy 7 in the crucible 6 is emitted.
The particles of the Co—Ni magnetic alloy 7 are evaporated by this, and adhere to the support 3 attached to the cooling can roll 1 to be deposited. Incidentally, such a process is the same as in the conventional thin film forming apparatus.

By the way, in the thin film forming process,
A part of the electron beam emitted from the electron gun spreads and is scattered, and a part of the electrons scatter to the support, which is attached to the support, and as a result, the support is electrostatically charged.
For this reason, the traveling of the support is disturbed, and in a severe case, the support may stick to the cooling can roll and may not be able to travel.

However, with the above-mentioned structure, even if the electron beam emitted from the electron gun 8 is scattered on the way and scattered electrons are scattered to the support body 3 and attached, the attached electrons are It is removed as described below. That is,
When the shutter 22 is opened during the thin film formation process, the static-eliminating particles 12 hit the Co—Ni magnetic alloy film on the support 3 through the second container 15 and the supply pipe 16. As a result, the electrons charged in the Co—Ni magnetic alloy film migrate to the charge eliminating particles 12 side, and the electrons charged in the Co—Ni magnetic alloy film are removed. Therefore, it is possible to prevent the traveling property of the support 3 from being deteriorated.

The static-eliminating particles 12 from which the electrons have transferred
Are collected in the collecting plate 17, the collecting pipe 18, the third container 19, and the fourth container 20. Since the collection destination is grounded, the static eliminating particles 12 also have no static electricity. After this, the charge-removing particles 12 recovered are the first
It is returned to the container 13. When the charge eliminating particles 12 are clogged in the middle of the supply pipe 16, the hammer arm 23 or the gear 24 is operated and vibration is exerted by the force of the hammer arm 23, whereby the charge eliminating particles 12 are discharged. The supply will be smooth again.

Incidentally, in the above apparatus, the inside of the vacuum chamber 9 was evacuated to a vacuum degree of 3 × 10 ^-5 Torr, and a P thickness of 6 μm was used.
Roll the ET film from the supply side roll 2a to the winding side roll 2b
Run at a speed of 10 m / min, and JEOL Ltd.
The Co-Ni (80-20) magnetic alloy was irradiated with an electron beam with an output of 30 kW using a pierce type electron gun manufactured by Co.
-Evaporating particles of Ni magnetic alloy to cool can roll 1
1800 attached to the PET film attached to the
Å deposited thickness. When forming this metal magnetic film, oxygen gas was introduced from the oxygen gas introducing pipe 5 at 150 sccm / min.
Then, the surface was oxidized. Then, a metal magnetic film was formed over a length of 1000 m, and the variation in the thickness was measured by a step meter (Taristep manufactured by Langter Laboxson). The results are shown in Table 1.

Table-1 100m 200m 300m 400m 500m 600m 700m 800m 900m Example 1 +50 +70 +50 +80 0 -50 0 +50 -20 Example 2 +60 +70 +70 +80 +60 0 0 0 +60 Comparative example +80 +120 +250 -50 +100 +220 -50 +100 +150 * The numbers in the table indicate the difference from 1800Å (unit is Å).

* Example 1 is a case where static-eliminating particles made of conductive carbon are used. * Example 2 is a case in which static-eliminating particles made of positively charged epoxy resin are used. * Comparative example is a case in which static-eliminating particles are not applied. According to this, when the thin film is formed while applying the charge-removing particles, it can be seen that the running characteristics of the support during the thin film formation are good and the metal magnetic film is formed with a uniform thickness. On the other hand, when a thin film is formed without applying static-eliminating particles, scattered electrons from the electron beam emitted from the electron gun scatter to the support, and the support is charged with static electricity. It can be seen that the traveling of the support is disturbed and the deposited metal magnetic film has a large variation.

Therefore, according to the thin film forming method and apparatus of the present invention, the thin film to be formed becomes uniform, the metal magnetic film having a small variation in thickness is formed, and a high-performance magnetic recording medium can be obtained with high yield. I understand that it will be done. Although the positive charging means has not been described in the above embodiment, the third container 19 or the fourth container 20 is not described.
Position, or the position of the first container 13 or the second container 15, or in the middle of these,
It suffices to charge the particles with a positive charge.

Although the case of forming a magnetic film has been described, the same applies to the case of providing a non-magnetic metal film (back coat film).

[0024]

[Effects] According to the present invention, a thin film having a uniform thickness and a small variation is favorably formed.

[Brief description of drawings]

FIG. 1 is a schematic view of the entire thin film forming apparatus of the present invention.

FIG. 2 is a schematic view of a main part of a thin film forming apparatus of the present invention.

FIG. 3 is a schematic view of a conventional thin film forming apparatus.

[Explanation of symbols]

 1 Cooling Can Roll 2a Supply Side Roll 2b Winding Side Roll 3 Support 7 Magnetic Alloy 8 Electron Gun 9 Vacuum Tank 12 Static Eliminating Particles 13 First Container 15 Second Container 16 Supply Pipe 17 Recovery Plate 18 Recovery Pipe 19th 3 container 20 4th container 22 Shatter 23 Hammer ring 24 Gear

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Shigemi Wakabayashi 2606, Akabane, Kai-cho, Haga-gun, Tochigi Prefecture Kao Co., Ltd.Institute of Information Sciences (72) Inventor Akira Shiga, 2606 Akabane, Kaiga-cho, Haga-gun, Tochigi Kao-sha ceremony Company Information Science Laboratory

Claims (9)

[Claims] 1. A beam is irradiated from a beam irradiation means,
A method of forming a thin film, wherein particles evaporated by the above process are deposited on a support, and a method for forming a thin film is characterized in that the support on which the particles are deposited is applied with static-eliminating particles of charged electrons. 2. A thin film forming method for irradiating a metal source with a beam from a beam irradiating means and depositing evaporated metal particles on a support running along the cooling can roll, wherein the cooling can roll after forming the thin film. A method of forming a thin film, characterized in that static-eliminating particles are applied to the side of the support on which the thin film is formed in the course of traveling along the direction. 3. The thin film forming method according to claim 1 or 2, wherein the charge-removing particles are positively charged particles. 4. The thin film forming method according to claim 1, wherein the static eliminator particles are particles made of a conductive material. 5. A thin film forming apparatus comprising a beam irradiating means and a support on which vaporized particles are irradiated by the beam irradiating means and vaporized particles are deposited on the support. 2. A thin film forming apparatus, characterized in that it is provided with a supply means for supplying the charge-eliminating particles of. 6. A cooling can roll, a support, a traveling means for this support, a beam irradiation means, and a supply means for supplying static-eliminating particles, and the beam from the beam irradiation means is a metal. The metal particles, which are irradiated to the source and evaporated, are configured to be deposited on a support that runs along the cooling can rolls, and the support on which the metal particles are deposited is configured to be supplied with static-eliminating particles. And a thin film forming apparatus. 7. A supply means for supplying the static-eliminating particles comprises a storage container for storing the static-eliminating particles, a shutter device for supplying and stopping the static-eliminating particles from the storage container, and a cooling can roll from the storage container. A first guide means for guiding the static eliminator particles toward a support body which runs along the cooling medium roll, and a second guide means for collecting the static eliminator particles which hit the support body traveling along the cooling can roll. The thin film forming apparatus according to claim 5 or 6, wherein 8. The thin film formation according to claim 7, wherein the guide means is configured so that the static eliminator particles fall from the upper side to the lower side, and the vibration applying means is provided in a path on the way. apparatus. 9. The thin film forming apparatus according to claim 5, further comprising a charging means for positively charging the charge-removing particles supplied toward the support.