JPH08201597A - Production method for silicon spectroscope - Google Patents

Abstract

PURPOSE: To prevent the introduction of distortion in silicon crystal for diffraction by contacting in low temperature and obtain a junction with high mechanical strength and high reliability. CONSTITUTION: On a base silicon crystal 11, silicon crystal 13 for diffraction provided in advance with cooling grooves 13a is overlaid putting a gold foil in between. Then, a load is given to both silicon crystals and heat is added to make the gold eutectic alloy and contact.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a silicon spectrometer used for spectroscopy of synchrotron radiation X-rays, and more particularly to a method for joining a silicon crystal for a spectrometer and a silicon base.

[0002]

2. Description of the Related Art Most of the spectroscopes used for the spectroscopic method utilizing synchrotron radiation perform whitening by injecting white light into a crystal and extracting diffracted light therefrom. Although there are several types of crystals that have been put to practical use, a silicon single crystal is most widely used because a crystal with a large area (100 mm square to 200 mm square) with few defects can be easily obtained. There is.

FIG. 4 is a conceptual diagram of a silicon spectroscope using a silicon single crystal as an X-ray spectroscopic element. X-ray source 41
X-ray white light emitted from the silicon crystal 42 for diffraction
Is diffracted by and converted into a single color. Then, it is diffracted again by the diffractive silicon crystal 43 to be converted into a single color with higher accuracy. FIG. 4 shows an example in which a spectroscope is composed of two spectroscopic elements. However, when the spectroscope is composed of only one spectroscopic element, the spectroscope is composed of more elements. In some cases.

As described above, the spectroscope has a high brightness and high intensity X-ray.
This is an optical device that directly irradiates linear white light, and if sufficient and uniform cooling is not performed, thermal crystal distortion due to irradiation will occur and the resulting monochromatic light will be significantly quantitatively and qualitatively. to degrade. Therefore, the cooling performance of the crystal is a major factor in determining the superiority or inferiority of the performance of the spectrometer itself.

FIG. 5 is a sectional view showing a cooling method which has been conventionally adopted (hereinafter, this is referred to as a first conventional example). In this method, a cooling groove 53a is formed in a diffractive silicon crystal 53 used as a diffractive crystal.
The diffractive silicon crystal 53 is fixed to the metal base 51 by the clamp 55. The metal base 51 is provided with a cooling opening 51a. On the metal base 51,
Spacers 52 are attached to guide the cooling water to the vicinity of the surface of the silicon crystal. An O-ring 54 is mounted between the metal base 51 and the diffractive silicon crystal 53 for sealing. Cooling water is flown into the cooling groove 53a through the cooling opening 51a, whereby the silicon crystal is directly and efficiently cooled.

In the first conventional example, the silicon crystal 53 is used.
It is difficult to process so that the remaining thickness of the entire surface that contributes to the diffraction is constant after the groove processing. Further, since the shape of the flow path of the cooling water is complicated, turbulence easily occurs in the flow of the cooling water. Therefore, uneven cooling is likely to occur in the silicon crystal, and it is difficult to obtain high-quality monochromatic light.

In order to solve the drawbacks of the first conventional example, a two-silicon crystal integrated spectroscope shown in FIG. 6 has been put into practical use (hereinafter referred to as the second conventional example). This is for adhering a silicon crystal 63 having a cooling groove 63a opened on a base silicon substrate 61 via an adhesive material 62, and allowing cooling water to flow through the cooling groove 63a. In the illustrated example, the silicon crystals are adhered to each other by the adhesive material 62. However, instead of this method, the adhesion may be performed by an electrostatic bonding method. The electrostatic bonding method is a method of stacking two silicon crystals and applying a pressure at a high temperature (for example, 1200 ° C.) to bond the two crystals.

In this second conventional example, since the cooling groove has a simple structure, it is possible to perform the groove processing with high accuracy by using a dicing device widely adopted in the semiconductor industry.
The remaining thickness after grooving can be made uniform within the surface. Further, since the flow of the cooling water is structurally less likely to be disturbed, the silicon crystal can be uniformly cooled.

[0009]

In the above-mentioned second conventional example, although a uniform and high cooling effect can be obtained,
The heat resistance and radiation resistance of the adhesive are not sufficient, and durability becomes a problem. In particular, it cannot be used for radiated light with higher brightness than expected for future use. Further, when a silicon crystal is bonded by the electrostatic bonding method, a treatment at a high temperature of 1000 ° C. or higher is required,
Strain is introduced into the silicon crystal, making it impossible to perform high-quality spectroscopy. Further, the joining by this method has a drawback that high surface accuracy is required, and the adhesive strength is not sufficient, which may hinder the supply of cooling water.

The present invention has been made in view of such a situation, and an object thereof is to make it possible to manufacture a highly reliable spectrometer having a large cooling effect, no crystal distortion. is there. Another object is to provide a spectroscope capable of sufficiently coping with higher brightness expected in the future.

[0011]

To achieve the above object, according to the present invention, a first silicon crystal serving as a base and a second silicon crystal having a structure serving as a passage for a coolant are formed. The side on which the structure serving as the passage of the second silicon crystal refrigerant is formed through the metal foil or the metal layer of the metal material capable of forming a eutectic alloy with silicon at low temperature or the alloy material with silicon. A method for manufacturing a silicon spectroscope is provided, in which the silicon foil is laminated on the first silicon crystal side and heated to eutecticize the metal foil or the metal layer to bond the two silicon crystals. . Then, preferably, a predetermined pressure is applied between both silicon crystals at the time of bonding.

[0012]

According to the present invention, two silicon crystals are laminated via, for example, a gold foil (or a gold layer). In this state,
For example, when heated to 500 ° C., interdiffusion occurs between silicon and gold, and gold forms a eutectic alloy, enabling low temperature bonding. Since the bonding is performed at a low temperature, no strain is introduced into the silicon crystal having the diffractive surface, and thus it is possible to form a high quality spectroscopic element.

Also, for example, a gold-silicon eutectic alloy has a high mechanical strength, is stable over time, and is excellent in radiation resistance, and thus provides a highly reliable spectrometer. It will be possible. Further, by applying a pressure between both silicon crystals at the time of bonding, the bonding can be performed more stably. The heating temperature range and the applied pressure range are 200 to 800 ° C. and 0.01 to 100 kg /, depending on the conditions such as mechanical strength or crystal strain required for the dispersive crystal.
It is set in the range of cm ² .

[0014]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a perspective view for explaining the first embodiment of the present invention. As shown in the figure, a silicon crystal for diffraction 13 in which a cooling groove 13 a is preliminarily opened is stacked on a base silicon crystal 11 via a gold (Au) foil 12. Then, a load of 1 kg / cm ² was applied between both silicon crystals, and heating was performed at 500 ° C. to perform bonding. No strain was introduced into the diffractive silicon crystal after bonding, and good spectral characteristics were shown. The mechanical strength of the joint was strong. Since the gold foil is completely alloyed after the joining, the foil does not remain, and the residual foil does not prevent the flow of cooling water.

FIG. 2 is a perspective view for explaining the second embodiment of the present invention. As shown in the figure, on the base silicon crystal 21, gold
Through the silicon foil 22, the diffractive silicon crystal 23 in which the cooling groove 23a is opened in advance is stacked. Then, while applying a load of 0.5 kg / cm ² between both silicon crystals, 400
Bonding was performed by heating to ℃. It was found that no distortion was introduced into the diffractive silicon crystal after bonding, and that it had good spectral characteristics. The mechanical strength of the joint was strong.

FIG. 3 is a side view for explaining the third embodiment of the present invention. The gold layer 32 is formed on the diffractive silicon crystal 33 by vapor deposition. After forming the gold layer, the dicing machine opens the cooling groove 33a. Then, as shown in FIG. 3, the cooling groove 3 is formed on the base silicon crystal 31.
A diffraction silicon crystal 33 is overlaid with 3a facing down. Then, while applying a load of 0.5 kg / cm ² between both silicon crystals, they were heated to 500 ° C. and joined. It was found that no distortion was introduced into the diffractive silicon crystal after bonding, and that it had good spectral characteristics. The mechanical strength of the joint was strong. The gold layer is used as the base silicon crystal 31.
It may be formed on the side.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications can be made within the scope of the claims. For example, instead of gold, silver (Ag), copper (C
u), aluminum (Al), palladium (Pd) or its alloy with silicon can be used. Also,
In order to suppress thermal crystal distortion due to heating at the time of bonding, it is desirable to previously remove a compound such as an oxide film on the silicon crystal surface for the purpose of causing eutecticization at a low temperature.

[0018]

As described above, according to the present invention,
Since it is possible to perform bonding with sufficient mechanical strength, it becomes possible to flow the refrigerant directly into the dispersive crystal. Therefore,
It becomes possible to uniformly and efficiently cool a crystal having a large thermal load. Further, since the bonding is performed at a low temperature, crystal strain can be suppressed, and an element having good spectral characteristics can be formed.

[Brief description of drawings]

FIG. 1 is a perspective view for explaining a first embodiment of the present invention.

FIG. 2 is a perspective view for explaining a second embodiment of the present invention.

FIG. 3 is a side view for explaining a third embodiment of the present invention.

FIG. 4 is a conceptual diagram of a silicon spectroscope composed of two diffracting silicon crystals.

FIG. 5 is a sectional view for explaining a first conventional example.

FIG. 6 is a perspective view for explaining a second embodiment.

[Explanation of reference numerals] 11, 21, 31, 61 Base silicon crystal 12 Gold foil 13, 23, 33, 42, 43, 53, 63 Diffraction silicon crystal 13a, 23a, 33a, 53a, 63a Cooling groove 22 Gold / silicon foil 32 Gold layer 41 X-ray source 51 Metal base 51a Cooling opening 52 Spacer 54 O-ring 55 Clamp 62 Adhesive

Claims (4)

[Claims] 1. A second silicon crystal, in which a structure serving as a passage for a coolant is formed on a first silicon crystal serving as a base, and a metal material capable of forming a eutectic alloy with silicon at a low temperature or its silicon. Through the metal foil or metal layer of the alloy of 1) so that the side on which the structure serving as the coolant passage of the second silicon crystal is formed is the first silicon crystal side, and the metal foil or the metal foil is heated. A method for manufacturing a silicon spectrometer, comprising eutecticizing a metal layer with silicon to bond both silicon crystals. 2. The method for manufacturing a silicon spectroscope according to claim 1, wherein a pressure is applied between both silicon crystals at the time of bonding. 3. The method of manufacturing a silicon spectroscope according to claim 1, wherein the oxide film on the bonding surface of both silicon crystals is removed prior to the bonding. 4. The method for manufacturing a silicon spectroscope according to claim 1, wherein the metal material is a material selected from gold, silver, copper, aluminum, and palladium.