JP2997147B2 - Method for manufacturing optical semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and, more particularly, to a method for die-bonding an optical semiconductor chip having an optical semiconductor element such as a semiconductor laser on a submount. The present invention relates to a technology that is effective when applied to a manufacturing method.

[0002]

2. Description of the Related Art FIG. 2 is a view for explaining a conventional manufacturing method for die bonding an optical semiconductor chip on a submount, wherein 1 is a submount, 2 is solder, 3 is an optical semiconductor chip, and 5 is tweezers. , 6 are cavities formed in the tweezers 5, and 7 is a vertical movement axis.

Hereinafter, a conventional manufacturing method will be briefly described with reference to FIG.

The optical semiconductor chip 3 on which an optical semiconductor element such as a semiconductor laser is formed is vacuum-adsorbed through a cavity 6 of a pair of tweezers 5 fixed to a vertical moving shaft 7 to be integrated.
The tweezers 5 that have attracted the optical semiconductor chip 3 move above the submount 1 in conjunction with the movement of the vertical drive shaft 7,
The optical semiconductor chip 3 is arranged at a predetermined position on the submount 1 whose surface is covered with the solder 2. Next, the tweezers 5 are pressed against the submount 1 and further heated to melt the solder 2, so that the optical semiconductor chip 3 is die-bonded to the submount 1.

[0005]

However, in the conventional die bonding method, when pressing the optical semiconductor chip with tweezers, it is necessary to carefully adjust the pressing so as not to damage the optical semiconductor chip. Also,
In an optical semiconductor chip with a large area, the portion pressed by the tweezers is relatively small and is not pressed uniformly, so that the bonding is incomplete and the thermal resistance in the vicinity between the optical semiconductor chip and the submount increases, and as a result, In addition, there is a problem that the element characteristics of the optical semiconductor device are deteriorated.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a technique capable of uniformly bonding an optical semiconductor chip to a submount without damage. is there.

[0007] The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0008]

In order to achieve the above object, according to the present invention, in an optical semiconductor device manufacturing method, an optical semiconductor chip is arranged at a predetermined position on a submount previously coated with a bonding material. After that, the most main feature is that the spacer is placed on the optical semiconductor chip, the spacer is pressed from above by a pressing member, and the die bonding is performed by heating.

[0009]

According to the above-mentioned means, in the method for manufacturing an optical semiconductor device, by inserting the spacer between the optical semiconductor chip and the pressing member, when the upper surface of the spacer is pressed by the pressing member, the pressure by the pressing member is reduced. Since the optical semiconductor chip is dispersed and spread by the spacer, pressure is uniformly applied to the optical semiconductor chip.
As a result, the optical semiconductor chip can be uniformly bonded to the submount without damage. Furthermore, the uniform bonding between the optical semiconductor chip and the submount allows
Since the thermal resistance in the vicinity between the optical semiconductor chip and the submount can be reduced, it is possible to prevent deterioration of element characteristics due to thermal resistance of the optical semiconductor device. Further, since the pressure at each point of the optical semiconductor chip is reduced, damage to the optical semiconductor chip is reduced.

[0010]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a view showing the configuration of an embodiment according to the present invention, wherein 1 is a diamond-made submount, and 2 is Au-Sn.
3 is an optical semiconductor chip having InP as a substrate and a semiconductor laser formed therein, 4 is a spacer,
5 is tweezers, 6 is a cavity drilled in tweezers 5,
Reference numeral 7 denotes a vertical movement axis. The spacer 4 is obtained by polishing a flat plate made of InP to a thickness of about 150 μm, and converting this to an area approximately equal to that of the optical semiconductor chip 3.

Hereinafter, a method for manufacturing the optical semiconductor device of this embodiment will be described with reference to FIG.

First, the optical semiconductor chip 3 is vacuum-sucked through the cavity 6 of the tweezers 5 fixed to the vertical moving shaft 7, and the tweezers 5 having absorbed the optical semiconductor chip 3 are moved together with the vertical moving shaft 7. In conjunction, submount 1
And the optical semiconductor chip is arranged at a predetermined position on the submount 1 on which the surface of the solder 2 is covered.

Next, in the same procedure as in the case of the optical semiconductor chip 3, the spacer 4 is vacuum-sucked with tweezers 5 and placed on the optical semiconductor chip 3. Thereafter, the optical semiconductor chip 3 is die-bonded to the submount 1 by pressing the tweezers 5 against the spacer 4 and simultaneously heating them. Then, the optical semiconductor chip 3 is die-bonded to the submount 1 by pressing the tweezers 5 against the submount 1 and further heating and melting the solder 2.

As can be seen from the above description, the following effects can be obtained by the method of manufacturing an optical semiconductor device of the present embodiment.

That is, by inserting the spacer 4 between the optical semiconductor chip 3 and the tweezers 5, the spacer 4
When pressing the upper surface of the device with tweezers 5, the pressing by the tweezers 5 is dispersed and spreads in the optical semiconductor chip 3,
Since the optical semiconductor chip 3 is uniformly applied, the optical semiconductor chip 3 can be uniformly bonded to the submount 1 without damage.

Furthermore, since the bonding between the optical semiconductor chip 3 and the submount 1 becomes uniform, the thermal resistance in the vicinity between the optical semiconductor chip 3 and the submount 1 can be reduced. Deterioration can be prevented. Further, since the pressure at each point of the optical semiconductor chip 3 is reduced, damage to the optical semiconductor chip 3 is reduced.

As described above, the present invention has been specifically described based on the embodiments. However, the present invention is not limited to the above-described embodiments, and it is needless to say that various changes can be made without departing from the gist of the present invention. Absent. For example, in the above embodiment,
Although InP was used as the material of the spacer 4, the present invention is not limited to this, and another semiconductor substrate such as silicon, or a thin polished flat plate such as glass may be used.

[0019]

As described above, according to the method for manufacturing an optical semiconductor device of the present invention, the optical semiconductor chip can be uniformly bonded to the submount without damaging the optical semiconductor chip. Further, since the thermal resistance in the vicinity between the optical semiconductor chip and the submount can be reduced, it is possible to prevent the element characteristics from being deteriorated due to the thermal resistance of the optical semiconductor device. Further, since the pressure at each point of the optical semiconductor chip is reduced, damage to the optical semiconductor chip is reduced.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining a method of manufacturing an optical semiconductor device according to one embodiment of the present invention.

FIG. 2 is a view for explaining a conventional method for manufacturing an optical semiconductor device.

[Explanation of symbols]

1. Submount, 2. Solder, 3. Optical semiconductor chip,
4 ... spacer, 5 ... tweezers, 6 ... hollow, 7 ... vertical movement axis.

Claims (1)

(57) [Claims] 1. A first step of arranging an optical semiconductor chip on which an optical semiconductor element has been formed at a predetermined position on a submount previously coated with a bonding material, and subsequently pressing and heating the optical semiconductor chip. In the method for manufacturing an optical semiconductor device including a second step of die bonding, a step of placing a spacer on the optical semiconductor chip is provided after the first step, and the spacer is disposed on the optical semiconductor chip. A method for manufacturing an optical semiconductor device, wherein the second step is performed in a state.