JPH05275570A - Semiconductor device - Google Patents

Abstract

PURPOSE:To provide a semiconductor device in which heat generated from an IC chip can be efficiently externally dissipated. CONSTITUTION:A recess which can be engaged with an IC chip 12 is formed on a metal member 22, and the chip 12 is adhered to the recess of the member 22 through conductive adhesive 24. When the chip 12 is resin-sealed, epoxy resin 26 is formed only at a lower surface side of the member 22, i.e., at the side formed with the recess, and the upper and side faces of the member 22 are exposed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to semiconductor devices such as I
The present invention relates to a semiconductor device in which a C chip is mounted by a TAB (Tape Automated Bonding) method and is resin-sealed.

[0002]

2. Description of the Related Art The TAB method is known as one of the mounting techniques for a semiconductor element cut out from a wafer, for example, an IC chip. This method is a bonding method in which a plurality of leads are formed on a flexible tape-shaped film made of polyimide or the like, and the leads and a plurality of electrodes formed on the IC chip are bonded together. The TAB method is
The electrical characteristics can be inspected at the tape stage, and the flexibility of the tape can be used to bend it for three-dimensional mounting.

FIG. 10 is a schematic sectional view of a conventional TAB package. The TAB package shown in FIG. 10 includes an IC chip 112, a film 114, leads 116 formed on the film 114, bumps 118, a flat metal plate 122, a conductive adhesive 124, a protective resin (epoxy resin). ) 126 and a heat radiation fin 128.

To form this TAB package, first, in the inner lead bonding step, the IC chip 11 is formed at the tip of the lead 116 via the bump 118.
After bonding the two electrodes, a conductive adhesive 124 is applied to the back surface of the IC chip 112, and the metal plate 122 is bonded. Generally, the metal plate 122 is used for grounding, but here, the metal plate 122 is used for heat dissipation. Then, the film 114 is sandwiched between the upper mold and the lower mold, and the epoxy resin 126 is injected to the IC chip 1
12 is resin-sealed. However, the upper surface of the metal plate 122 is exposed. Finally, the metal plate 12
2 through the conductive adhesive 124 on the exposed surface of the fin 12
By attaching 8, the TAB package is formed.

[0005]

By the way, ICs are generally used.
Epoxy resin used as a chip protection resin does not have good heat dissipation. Moreover, since the molding resin has a flat surface and is formed quite thick, the heat generated by the IC chip cannot be efficiently radiated to the outside. Therefore,
Even if a heat radiation fin is provided on the resin molded product after resin sealing, a high heat radiation effect could not be expected.

The present invention has been made under the above circumstances, and an object thereof is to provide a semiconductor device capable of efficiently radiating heat generated by an IC chip to the outside.

[0007]

The present invention for achieving the above object provides a semiconductor device in which a semiconductor element mounted on a film carrier is sealed with a resin, and a metal for heat dissipation is provided on the back surface of the semiconductor element. A member is attached, the lower surface side of the metal member is sealed with the resin, and the upper surface and the side surface of the metal member are exposed.

[0008]

According to the present invention, the metal member for heat dissipation is attached to the back surface of the semiconductor element and the resin is formed only on the lower surface side of the metal member when the semiconductor element is sealed with the resin by the above-mentioned structure. The top and side surfaces are exposed. Since the metal member is exposed in substantially the upper half of the surface of the package, the heat generated by the semiconductor element can be efficiently radiated to the outside from a wider area than the conventional semiconductor device.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view of a semiconductor device (TAB package) which is a first embodiment of the present invention, and FIG. 2 is a diagram for explaining a manufacturing method of the TAB package.

The TAB package shown in FIG. 1 has a TAB tape, a metal member 22, a conductive adhesive 24, a protective resin (epoxy resin) 26, and a polyimide adhesive 28.
And with. In addition, in the present embodiment, TAB
The tape is an IC chip 12 and a tape-shaped film 14.
It has a film carrier having leads 16 formed thereon and bumps 18. The surface of the film carrier means the surface on which the leads 16 are formed.

The so-called transfer bump method is used to connect the IC chip 12 and the lead 16, and the electrode formed on the surface of the IC chip 12 and the tip of the lead 16 are joined via the bump 18. The IC chip 12 is mounted on the surface of the film carrier.

The metal member 22 is formed by forming a recess in a metal plate. The shape of the recess is formed so that the back side of the IC chip 12 can be fitted. IC chip 1
2 and the metal member 22 are made of a polyimide-based conductive adhesive 2
It is fixed through 8. As the material of the metal member 22,
A metal having high thermal conductivity such as aluminum is used. Here, the metal member 22 is used for heat dissipation.

The protective resin 26 is not formed so as to cover the entire metal member 22, but is formed only on the lower surface side of the metal member 22, that is, on the side where the recess is formed. Exposed. Further, a polyimide adhesive 28 is applied to the metal member 22 to improve the adhesiveness between the metal member 22 and the epoxy resin 26.

Next, a method of manufacturing the TAB package of the first embodiment will be described. First, using a so-called transfer bump method from the film carrier, the tip of the lead 16 and the I
A TAB tape is formed by bonding the electrodes formed on the surface of the C chip 12 via the bumps 18. A conductive adhesive 24 is applied to the recess of the metal member 22, and the IC chip 12 is fitted into the recess of the metal member 22 and bonded.
Here, a polyimide adhesive 28 is applied to the surface around the recess formed in the metal member 22.

Subsequently, the IC chip 12 is sealed with resin. As the molding die used here, one formed so that the shape of the resin injection chamber of the upper die, which is brought into contact with the surface of the film carrier, matches the shape of the metal member.
As shown in FIG. 2, the metal member 22 is fitted into the resin injection chamber of the upper mold 32, and the TAB tape is sandwiched between the upper mold 32 and the lower mold 34. The molten thermosetting resin (epoxy resin) 26 is poured from a resin supply port (not shown) provided in the lower mold 34, and is pressed into the resin injection chamber. After holding under pressure for a few minutes to allow the resin to cure,
Remove the resin-molded TAB tape from the mold.

Thereafter, by cutting the film 14 and the leads 16 for each frame in the punching process,
The resin-sealed IC chips 12 are individually punched. Finally, the lead 16 is formed and the T shown in FIG.
Obtain the finished product of the AB package.

In the TAB package of the first embodiment, the IC
By attaching the metal member to the back surface of the chip and forming the protective resin only on the lower surface side of the metal member when the IC chip is resin-sealed, the upper surface and the side surface of the metal member can be exposed. Since the metal member is exposed in the upper half of the surface of the package as described above, the heat generated by the IC chip can be efficiently radiated to the outside from a wider area than the conventional TAB package.

In the TAB package of the first embodiment, the IC chip is fitted in the recess of the metal member, and the upper mold is formed so that the shape of the resin injection chamber matches the shape of the metal member. Therefore, when sealing with resin,
Since the IC chip is fixed to the upper mold via the metal member, it is possible to prevent the IC chip from being displaced or tilted from a predetermined position due to the flow of the injected resin or the resin pressure. Therefore, even if a thin IC chip is used, the bonding between the electrode of the IC chip and the lead is not peeled off, and the incidence of defective products can be reduced, so that the yield of products can be improved. it can.

Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a second embodiment T of the present invention.
It is a schematic sectional drawing of an AB package. In the second embodiment, components having the same functions as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

The second embodiment differs from the first embodiment in that fins 23a are formed on the upper surface of the metal member 22a. The TAB package having the metal member 22a can be easily formed by the same method as that of the first embodiment by using an upper die having a groove fitted with the fin 23a. Other configurations are similar to those of the first embodiment. The TAB package of the second embodiment also has the same operation and effect as the first embodiment, but heat can be radiated to the outside by the amount of the fins provided, and heat dissipation can be improved.

Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 shows a third embodiment T of the present invention.
It is a schematic sectional drawing of an AB package. In the third embodiment, components having the same functions as those in the first and second embodiments are designated by the same reference numerals, and detailed description thereof will be omitted.

The third embodiment differs from the second embodiment in that the fins 23b are provided not only on the upper surface of the metal member 22b but also on the side surfaces thereof.
Is formed. The TAB package having the metal member 22b can be formed by the same method as in the second embodiment. Other configurations are similar to those of the first and second embodiments. The TAB package of the third embodiment also has the same action and effect as the first and second embodiments, but since the fins are also provided on the side surfaces of the metal member, the T package formed in the second embodiment is formed.
The heat dissipation can be further improved as compared with the AB package.

Next, a fourth embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a schematic sectional view of a TAB package which is a fourth embodiment of the present invention, and FIG.
It is a figure for demonstrating the manufacturing method of B package. In the fourth embodiment, components having the same functions as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

The fourth embodiment differs from the first embodiment in that two IC chips 12a and 12b are provided in the same package. In order to manufacture the TAB package of the fourth embodiment, first, the leads 16 formed on the film 14c are formed.
c and the electrodes formed on the surfaces of the two IC chips 12a and 12b are bonded via the bumps 18. Further, in terms of wiring design, the electrodes of the two IC chips 12a and 12b are connected by a bonding wire 17. The conductive adhesive 24 is applied to the two recesses of the metal member 22c, and the IC chip 12
The a and 12b are fitted into the concave portions of the metal member 22c and adhered. Here, in order to prevent the bonding wire 17 from flowing and bending, as shown in FIG. 6, the bonding wire 17 is resin-sealed by potting. Then, similarly to the first embodiment, the IC chip 12 is inserted through the metal member 22c.
The TAB package shown in FIG. 5 is obtained by fixing a and 12b with an upper mold and sealing with resin. 27
Is potting resin.

The TAB package of the fourth embodiment also has the same operation and effect as the first embodiment. Also two I
By forming the C chip in the same package, space saving of the semiconductor device can be achieved.

Next, a fifth embodiment of the present invention will be described with reference to FIG. FIG. 7 shows T which is a fifth embodiment of the present invention.
It is a schematic sectional drawing of an AB package. In the fifth embodiment, those having the same functions as those in the fourth embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

The fifth embodiment differs from the fourth embodiment in that fins 23d are formed on the upper surface of the metal member 22d. The TAB package having the metal member 22d can be easily formed by the same method as in the second embodiment.
Other configurations are similar to those of the fourth embodiment. The TAB package of the fifth embodiment also has the same operation and effect as the fourth embodiment, but heat can be released to the outside by the amount of the fins provided, and the heat dissipation can be improved.

Next, a sixth embodiment of the present invention will be described with reference to FIG. FIG. 8 shows the T which is the sixth embodiment of the present invention.
It is a schematic sectional drawing of an AB package. In the sixth embodiment, those having the same functions as those in the fourth and fifth embodiments are designated by the same reference numerals, and detailed description thereof will be omitted.

The sixth embodiment differs from the fifth embodiment in that the fins 23e are formed not only on the upper surface of the metal member 22e but also on the side surfaces thereof.
Is formed. The TAB package having the metal member 22e can be formed by the same method as in the fifth embodiment. Other configurations are similar to those of the fourth and fifth embodiments. The TAB package of the sixth embodiment also has the same operation and effect as the fourth and fifth embodiments, but the TAB formed in the fifth embodiment because the fins are also provided on the side surfaces of the metal member.
The heat dissipation can be further improved as compared with the package.

The present invention is not limited to the above-mentioned embodiments, but various modifications can be made within the scope of the invention. For example, in each of the above-described embodiments, the case where the TAB package is formed by using the TAB tape in which the lead and the electrode of the IC chip are bonded by the transfer bump method has been described, but the TAB tape formed by the IC bump method is used. It is also possible to form a TAB package.
In the IC bump method, IC chips can be mounted on both the front and back surfaces of the film carrier. For this reason,
TAB with an IC chip mounted on the back of the film carrier
By forming the TAB package using the tape, the semiconductor device can be thinned as shown in FIG. In FIG. 9, components having the same functions as those shown in FIG. 1 are designated by the same reference numerals,
Detailed description thereof will be omitted.

In each of the above-described embodiments, the case where the recess is formed in the metal member and the IC chip is fitted and fixed in the recess through the conductive adhesive has been described, but the recess is not necessarily formed in the metal member. However, the metal member and the IC chip may be bonded to each other via a conductive adhesive. Also in this case, the heat generated by the IC chip can be efficiently radiated to the outside.

[0032]

As described above, according to the present invention, the metal member for heat dissipation is attached to the back surface of the semiconductor element, the lower surface side of the metal member is sealed with resin, and the upper surface and the side surface of the metal member are exposed. As a result, since the metal member is exposed in the upper half of the surface of the package, it is possible to provide a semiconductor device capable of efficiently radiating the heat generated by the semiconductor element from a wide range to the outside.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a semiconductor device that is a first embodiment of the present invention.

FIG. 2 is a drawing for explaining the manufacturing method of the semiconductor device according to the first embodiment.

FIG. 3 is a schematic cross-sectional view of a semiconductor device that is a second embodiment of the present invention.

FIG. 4 is a schematic sectional view of a semiconductor device according to a third embodiment of the present invention.

FIG. 5 is a schematic sectional view of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 6 is a drawing for explaining the manufacturing method of the semiconductor device according to the fourth embodiment.

FIG. 7 is a schematic sectional view of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 8 is a schematic sectional view of a semiconductor device according to a sixth embodiment of the present invention.

FIG. 9 is a schematic sectional view of a semiconductor device according to another embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view of a conventional semiconductor device.

[Explanation of symbols]

12, 12a, 12b IC chip 14, 14c film 16, 16c lead 17 bonding wire 18 bump 22,22a, 22b, 22c, 22d, 22e metal member 23a, 23b, 23d, 23e fin 24 conductive adhesive 26 epoxy resin 27 Potting resin 28 Polyimide adhesive 32 Upper mold 34 Lower mold

Claims (1)

[Claims] 1. In a semiconductor device in which a semiconductor element mounted on a film carrier is sealed with resin, a metal member for heat dissipation is attached to the back surface of the semiconductor element, and the lower surface side of the metal member is sealed with the resin. The semiconductor device is characterized in that the upper surface and the side surface of the metal member are exposed.