JPH0812920B2 - 横型伝導度変調型ｍｏｓｆｅｔおよびその制御方法 - Google Patents

横型伝導度変調型ｍｏｓｆｅｔおよびその制御方法

Info

Publication number
JPH0812920B2
JPH0812920B2 JP1026944A JP2694489A JPH0812920B2 JP H0812920 B2 JPH0812920 B2 JP H0812920B2 JP 1026944 A JP1026944 A JP 1026944A JP 2694489 A JP2694489 A JP 2694489A JP H0812920 B2 JPH0812920 B2 JP H0812920B2
Authority
JP
Japan
Prior art keywords
region
layer
electrode
drain
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1026944A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02206172A (ja
Inventor
康和 関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1026944A priority Critical patent/JPH0812920B2/ja
Priority to DE4003389A priority patent/DE4003389A1/de
Publication of JPH02206172A publication Critical patent/JPH02206172A/ja
Publication of JPH0812920B2 publication Critical patent/JPH0812920B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]

Landscapes

  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP1026944A 1989-02-06 1989-02-06 横型伝導度変調型ｍｏｓｆｅｔおよびその制御方法 Expired - Fee Related JPH0812920B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1026944A JPH0812920B2 (ja) 1989-02-06 1989-02-06 横型伝導度変調型ｍｏｓｆｅｔおよびその制御方法
DE4003389A DE4003389A1 (de) 1989-02-06 1990-02-05 Horizontal-leitfaehigkeitsaenderungs-mosfet und verfahren zu seiner steuerung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1026944A JPH0812920B2 (ja) 1989-02-06 1989-02-06 横型伝導度変調型ｍｏｓｆｅｔおよびその制御方法

Publications (2)

Publication Number Publication Date
JPH02206172A JPH02206172A (ja) 1990-08-15
JPH0812920B2 true JPH0812920B2 (ja) 1996-02-07

Family

ID=12207265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1026944A Expired - Fee Related JPH0812920B2 (ja) 1989-02-06 1989-02-06 横型伝導度変調型ｍｏｓｆｅｔおよびその制御方法

Country Status (2)

Country Link
JP (1) JPH0812920B2 (enrdf_load_stackoverflow)
DE (1) DE4003389A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0122103B1 (ko) * 1994-05-07 1997-11-26 김광호 반도체 메모리 장치의 퓨즈 소자
DE102005019157A1 (de) 2005-04-25 2006-10-26 Robert Bosch Gmbh Anordnung von MOSFETs zur Steuerung von demselben
WO2013088544A1 (ja) * 2011-12-15 2013-06-20 株式会社日立製作所 半導体装置および電力変換装置

Also Published As

Publication number Publication date
DE4003389C2 (enrdf_load_stackoverflow) 1992-12-17
DE4003389A1 (de) 1990-08-16
JPH02206172A (ja) 1990-08-15

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