DE4003389A1 - Horizontal-leitfaehigkeitsaenderungs-mosfet und verfahren zu seiner steuerung - Google Patents

Horizontal-leitfaehigkeitsaenderungs-mosfet und verfahren zu seiner steuerung

Info

Publication number
DE4003389A1
DE4003389A1 DE4003389A DE4003389A DE4003389A1 DE 4003389 A1 DE4003389 A1 DE 4003389A1 DE 4003389 A DE4003389 A DE 4003389A DE 4003389 A DE4003389 A DE 4003389A DE 4003389 A1 DE4003389 A1 DE 4003389A1
Authority
DE
Germany
Prior art keywords
zone
conductivity
electrode
substrate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4003389A
Other languages
German (de)
English (en)
Other versions
DE4003389C2 (enrdf_load_stackoverflow
Inventor
Yasukazu Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE4003389A1 publication Critical patent/DE4003389A1/de
Application granted granted Critical
Publication of DE4003389C2 publication Critical patent/DE4003389C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]

Landscapes

  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE4003389A 1989-02-06 1990-02-05 Horizontal-leitfaehigkeitsaenderungs-mosfet und verfahren zu seiner steuerung Granted DE4003389A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1026944A JPH0812920B2 (ja) 1989-02-06 1989-02-06 横型伝導度変調型ｍｏｓｆｅｔおよびその制御方法

Publications (2)

Publication Number Publication Date
DE4003389A1 true DE4003389A1 (de) 1990-08-16
DE4003389C2 DE4003389C2 (enrdf_load_stackoverflow) 1992-12-17

Family

ID=12207265

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4003389A Granted DE4003389A1 (de) 1989-02-06 1990-02-05 Horizontal-leitfaehigkeitsaenderungs-mosfet und verfahren zu seiner steuerung

Country Status (2)

Country Link
JP (1) JPH0812920B2 (enrdf_load_stackoverflow)
DE (1) DE4003389A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338891B2 (en) 2005-04-25 2012-12-25 Robert Bosch Gmbh Arrangement of MOSFET's for controlling same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0122103B1 (ko) * 1994-05-07 1997-11-26 김광호 반도체 메모리 장치의 퓨즈 소자
WO2013088544A1 (ja) * 2011-12-15 2013-06-20 株式会社日立製作所 半導体装置および電力変換装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE El. Dev. Lett., Vol. EDL-7, No. 2, Febr. 1986, pp. 61-63 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338891B2 (en) 2005-04-25 2012-12-25 Robert Bosch Gmbh Arrangement of MOSFET's for controlling same

Also Published As

Publication number Publication date
DE4003389C2 (enrdf_load_stackoverflow) 1992-12-17
JPH0812920B2 (ja) 1996-02-07
JPH02206172A (ja) 1990-08-15

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: HOFFMANN, E., DIPL.-ING., PAT.-ANW., 82166 GRAEFELFING

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee