JPH0799640B2 - 半導体記憶装置の検査方法 - Google Patents

半導体記憶装置の検査方法

Info

Publication number
JPH0799640B2
JPH0799640B2 JP60021697A JP2169785A JPH0799640B2 JP H0799640 B2 JPH0799640 B2 JP H0799640B2 JP 60021697 A JP60021697 A JP 60021697A JP 2169785 A JP2169785 A JP 2169785A JP H0799640 B2 JPH0799640 B2 JP H0799640B2
Authority
JP
Japan
Prior art keywords
circuit
memory cell
address
voltage
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60021697A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61182700A (ja
Inventor
和宏 小森
雄次 原
秀明 高橋
実 福田
怜 目黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60021697A priority Critical patent/JPH0799640B2/ja
Priority to KR1019860000188A priority patent/KR940007239B1/ko
Publication of JPS61182700A publication Critical patent/JPS61182700A/ja
Priority to US07/535,298 priority patent/US5155701A/en
Publication of JPH0799640B2 publication Critical patent/JPH0799640B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Tests Of Electronic Circuits (AREA)
JP60021697A 1985-02-08 1985-02-08 半導体記憶装置の検査方法 Expired - Lifetime JPH0799640B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60021697A JPH0799640B2 (ja) 1985-02-08 1985-02-08 半導体記憶装置の検査方法
KR1019860000188A KR940007239B1 (ko) 1985-02-08 1986-01-15 반도체 집적회로 장치 및 그 검사방법
US07/535,298 US5155701A (en) 1985-02-08 1990-06-08 Semiconductor integrated circuit device and method of testing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60021697A JPH0799640B2 (ja) 1985-02-08 1985-02-08 半導体記憶装置の検査方法

Publications (2)

Publication Number Publication Date
JPS61182700A JPS61182700A (ja) 1986-08-15
JPH0799640B2 true JPH0799640B2 (ja) 1995-10-25

Family

ID=12062260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60021697A Expired - Lifetime JPH0799640B2 (ja) 1985-02-08 1985-02-08 半導体記憶装置の検査方法

Country Status (2)

Country Link
JP (1) JPH0799640B2 (ko)
KR (1) KR940007239B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809231A (en) * 1987-11-12 1989-02-28 Motorola, Inc. Method and apparatus for post-packaging testing of one-time programmable memories
US5912836A (en) * 1997-12-01 1999-06-15 Amic Technology, Inc. Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035760B2 (ja) * 1980-12-18 1985-08-16 富士通株式会社 半導体記憶装置
EP0101107A2 (en) * 1982-07-19 1984-02-22 Motorola, Inc. Method of testing a semiconductor memory array

Also Published As

Publication number Publication date
KR940007239B1 (ko) 1994-08-10
JPS61182700A (ja) 1986-08-15
KR860006791A (ko) 1986-09-15

Similar Documents

Publication Publication Date Title
US5155701A (en) Semiconductor integrated circuit device and method of testing the same
JP2755936B2 (ja) ブロック単位でストレス印加可能なストレス電圧印加回路
JPH0530000B2 (ko)
JPH0467280B2 (ko)
JPH07287983A (ja) 電気的に消去及びプログラム可能な半導体メモリ装置の自動消去最適化回路及びその方法
US5400276A (en) Electrically erasable nonvolatile semiconductor memory that permits data readout despite the occurrence of over-erased memory cells
JPH02177100A (ja) 半導体記憶装置のテスト回路
US7889568B2 (en) Memory, memory operating method, and memory system
US4870618A (en) Semiconductor memory equipped with test circuit for testing data holding characteristic during data programming period
JPH0679440B2 (ja) 不揮発性半導体記憶装置
JPS6237477B2 (ko)
KR100596330B1 (ko) 플래쉬 메모리의 사이클링 불량을 검출하는 방법 및 그 장치
JP2008004159A (ja) 半導体記憶装置及びそのテスト方法
JPH0799640B2 (ja) 半導体記憶装置の検査方法
EP0413347A2 (en) Semiconductor nonvolatile memory device
JPH04119595A (ja) 不揮発性半導体メモリ
JP2735498B2 (ja) 不揮発性メモリ
JPH09293397A (ja) 不揮発性半導体記憶装置の検査方法
JPH1055697A (ja) 不揮発性半導体記憶装置
JPH10125100A (ja) 不揮発性半導体メモリ
JP3360855B2 (ja) 一括消去型不揮発性半導体記憶装置およびその試験方法
JPH09153294A (ja) 半導体記憶装置
JPH06349288A (ja) 不揮発性半導体記憶装置
JPS59135699A (ja) 半導体記憶装置
JPS6381700A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term