JPH0786916A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPH0786916A
JPH0786916A JP5231234A JP23123493A JPH0786916A JP H0786916 A JPH0786916 A JP H0786916A JP 5231234 A JP5231234 A JP 5231234A JP 23123493 A JP23123493 A JP 23123493A JP H0786916 A JPH0786916 A JP H0786916A
Authority
JP
Japan
Prior art keywords
circuit
semiconductor integrated
integrated circuit
level
logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5231234A
Other languages
English (en)
Japanese (ja)
Inventor
Takayuki Kawahara
尊之 河原
Ryoichi Hori
陵一 堀
Shinji Horiguchi
真志 堀口
Ryoichi Kurihara
良一 栗原
Kiyoo Ito
清男 伊藤
Masakazu Aoki
正和 青木
Takeshi Sakata
健 阪田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5231234A priority Critical patent/JPH0786916A/ja
Priority to US08/294,055 priority patent/US5614847A/en
Priority to KR1019940023402A priority patent/KR100305993B1/ko
Publication of JPH0786916A publication Critical patent/JPH0786916A/ja
Priority to US08/714,994 priority patent/US5880604A/en
Priority to US09/199,199 priority patent/US6107836A/en
Priority to KR1019990039230A priority patent/KR100355436B1/ko
Priority to KR1019990039229A priority patent/KR100305992B1/ko
Priority to US09/613,594 priority patent/US6404239B1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
JP5231234A 1992-04-14 1993-09-17 半導体集積回路 Pending JPH0786916A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP5231234A JPH0786916A (ja) 1993-09-17 1993-09-17 半導体集積回路
US08/294,055 US5614847A (en) 1992-04-14 1994-08-24 Semiconductor integrated circuit device having power reduction mechanism
KR1019940023402A KR100305993B1 (ko) 1993-09-17 1994-09-15 전력저감기구를갖는반도체집적회로장치
US08/714,994 US5880604A (en) 1992-04-14 1996-09-17 Semiconductor integrated circuit device having power reduction mechanism
US09/199,199 US6107836A (en) 1992-04-14 1998-11-25 Semiconductor integrated circuit device having power reduction mechanism
KR1019990039230A KR100355436B1 (ko) 1993-09-17 1999-09-14 전력저감기구를 갖는 반도체 집적회로장치
KR1019990039229A KR100305992B1 (ko) 1993-09-17 1999-09-14 전력저감기구를 갖는 반도체 집적회로장치
US09/613,594 US6404239B1 (en) 1992-04-14 2000-07-10 Semiconductor integrated circuit device having power reduction mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5231234A JPH0786916A (ja) 1993-09-17 1993-09-17 半導体集積回路

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP29059299A Division JP3255159B2 (ja) 1999-10-13 1999-10-13 半導体集積回路
JP29059199A Division JP3255158B2 (ja) 1999-10-13 1999-10-13 半導体集積回路
JP2003021299A Division JP3567160B2 (ja) 2003-01-30 2003-01-30 半導体集積回路

Publications (1)

Publication Number Publication Date
JPH0786916A true JPH0786916A (ja) 1995-03-31

Family

ID=16920428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5231234A Pending JPH0786916A (ja) 1992-04-14 1993-09-17 半導体集積回路

Country Status (2)

Country Link
JP (1) JPH0786916A (ko)
KR (3) KR100305993B1 (ko)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724297A (en) * 1995-12-21 1998-03-03 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
US5805603A (en) * 1996-07-05 1998-09-08 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device realizing high speed and accurate operation
EP0951072A1 (en) * 1996-04-08 1999-10-20 Hitachi, Ltd. Semiconductor integrated circuit device
US5996070A (en) * 1996-07-30 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Microprocessor capable of executing condition execution instructions using encoded condition execution field in the instructions
US6411149B1 (en) 1996-07-30 2002-06-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device operable with low power consumption at low power supply voltage
US6426908B1 (en) 1999-08-05 2002-07-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with reduced current consumption in data hold mode
KR100405925B1 (ko) * 2000-04-13 2003-11-15 미쓰비시덴키 가부시키가이샤 저전원 전압화 가능한 반도체 기억 장치
US6657911B2 (en) 2001-10-23 2003-12-02 Hitachi, Ltd. Semiconductor device with low power consumption memory circuit
US6756814B2 (en) 2002-01-31 2004-06-29 Renesas Technology Corp. Logic circuit and semiconductor device
US6795328B2 (en) 2002-05-29 2004-09-21 Fujitsu Limited Semiconductor memory device
US6822476B2 (en) 2002-01-23 2004-11-23 Renesas Technology Corporation Logic circuit whose power switch is quickly turned on and off
JP2005102086A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体装置およびレベル変換回路
JP2007036899A (ja) * 2005-07-28 2007-02-08 Sony Corp 制御信号発生回路およびそれを用いた信号処理回路
JP2007095787A (ja) * 2005-09-27 2007-04-12 Nec Electronics Corp 半導体集積回路
US7276956B2 (en) 2004-06-23 2007-10-02 Nec Electronics Corporation Integrated circuit apparatus controlling source voltage of MOSFET based on temperature
JP2008091030A (ja) * 1995-12-21 2008-04-17 Elpida Memory Inc 半導体集積回路装置
JP2017028649A (ja) * 2015-07-28 2017-02-02 株式会社東芝 半導体集積回路
JP2018101436A (ja) * 2012-01-23 2018-06-28 株式会社半導体エネルギー研究所 電子機器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100410813B1 (ko) * 1996-06-27 2004-03-30 주식회사 하이닉스반도체 반도체소자의고속저전력구동회로를구현하기위한인버터
JP3878431B2 (ja) * 2000-06-16 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置
KR20230001116U (ko) 2021-11-24 2023-06-01 주식회사 한국가스기술공사 해수 식 용사 코팅 방식 전위 측정용 기준전극봉

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646705B2 (ja) * 1984-02-10 1994-06-15 株式会社日立製作所 低電力ｃｍｏｓ集積回路

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498762B2 (en) 1995-12-21 2002-12-24 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
US5926430A (en) * 1995-12-21 1999-07-20 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
JP2008091030A (ja) * 1995-12-21 2008-04-17 Elpida Memory Inc 半導体集積回路装置
US6240035B1 (en) 1995-12-21 2001-05-29 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
US6275440B2 (en) 1995-12-21 2001-08-14 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
US6396761B2 (en) 1995-12-21 2002-05-28 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
US5724297A (en) * 1995-12-21 1998-03-03 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
US6424586B1 (en) 1995-12-21 2002-07-23 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating same
US6473354B2 (en) 1995-12-21 2002-10-29 Hitachi, Ltd. Semiconductor integrated circuit device and method of activating the same
EP0951072A1 (en) * 1996-04-08 1999-10-20 Hitachi, Ltd. Semiconductor integrated circuit device
EP0951072B1 (en) * 1996-04-08 2009-12-09 Hitachi, Ltd. Semiconductor integrated circuit device
US5805603A (en) * 1996-07-05 1998-09-08 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device realizing high speed and accurate operation
US6411149B1 (en) 1996-07-30 2002-06-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device operable with low power consumption at low power supply voltage
US5996070A (en) * 1996-07-30 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Microprocessor capable of executing condition execution instructions using encoded condition execution field in the instructions
US6487136B2 (en) 1999-08-05 2002-11-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with reduced current consumption in data hold mode
US6426908B1 (en) 1999-08-05 2002-07-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with reduced current consumption in data hold mode
KR100405925B1 (ko) * 2000-04-13 2003-11-15 미쓰비시덴키 가부시키가이샤 저전원 전압화 가능한 반도체 기억 장치
US6914803B2 (en) 2001-10-23 2005-07-05 Hitachi, Ltd. Low-power semiconductor memory device
US9928900B2 (en) 2001-10-23 2018-03-27 Renesas Electronics Corporation Low power semiconductor memory device
US10573376B2 (en) 2001-10-23 2020-02-25 Renesas Electronics Corporation Lower-power semiconductor memory device
US10229732B2 (en) 2001-10-23 2019-03-12 Renesas Electronics Corporation Semiconductor device
US9754659B2 (en) 2001-10-23 2017-09-05 Renesas Electronics Corporation Low-power semiconductor device
US7099183B2 (en) 2001-10-23 2006-08-29 Hitachi, Ltd. Semiconductor device
US9214221B2 (en) 2001-10-23 2015-12-15 Renesas Electronics Corporation Semiconductor device with logic circuit, SRAM circuit and standby state
US8711607B2 (en) 2001-10-23 2014-04-29 Renesas Electronics Corporation Semiconductor device
US7272068B2 (en) 2001-10-23 2007-09-18 Hitachi, Ltd. Semiconductor device
US7961545B2 (en) 2001-10-23 2011-06-14 Renesas Electronics Corporation Semiconductor device
US7646662B2 (en) 2001-10-23 2010-01-12 Renesas Technology Corp. Semiconductor device
US7474584B2 (en) 2001-10-23 2009-01-06 Renesas Technology Corp. Semiconductor device
US6657911B2 (en) 2001-10-23 2003-12-02 Hitachi, Ltd. Semiconductor device with low power consumption memory circuit
US6822476B2 (en) 2002-01-23 2004-11-23 Renesas Technology Corporation Logic circuit whose power switch is quickly turned on and off
US6989686B2 (en) 2002-01-23 2006-01-24 Renesas Technology Corp. Logic circuit whose power switch is quickly turned on and off
US6756814B2 (en) 2002-01-31 2004-06-29 Renesas Technology Corp. Logic circuit and semiconductor device
US6795328B2 (en) 2002-05-29 2004-09-21 Fujitsu Limited Semiconductor memory device
JP2005102086A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体装置およびレベル変換回路
US7276956B2 (en) 2004-06-23 2007-10-02 Nec Electronics Corporation Integrated circuit apparatus controlling source voltage of MOSFET based on temperature
JP2007036899A (ja) * 2005-07-28 2007-02-08 Sony Corp 制御信号発生回路およびそれを用いた信号処理回路
JP2007095787A (ja) * 2005-09-27 2007-04-12 Nec Electronics Corp 半導体集積回路
JP2018101436A (ja) * 2012-01-23 2018-06-28 株式会社半導体エネルギー研究所 電子機器
US11209880B2 (en) 2012-01-23 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11934243B2 (en) 2012-01-23 2024-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017028649A (ja) * 2015-07-28 2017-02-02 株式会社東芝 半導体集積回路
US10411638B2 (en) 2015-07-28 2019-09-10 Kabushiki Kaisha Toshiba Semiconductor integrated circuit

Also Published As

Publication number Publication date
KR100305993B1 (ko) 2001-12-15
KR100305992B1 (ko) 2001-11-07
KR100355436B1 (ko) 2002-10-11

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Legal Events

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Effective date: 20040308

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