JPH0784358B2 - シリコン融液からのデンドライトウエブ引き上げ装置 - Google Patents

シリコン融液からのデンドライトウエブ引き上げ装置

Info

Publication number
JPH0784358B2
JPH0784358B2 JP60242559A JP24255985A JPH0784358B2 JP H0784358 B2 JPH0784358 B2 JP H0784358B2 JP 60242559 A JP60242559 A JP 60242559A JP 24255985 A JP24255985 A JP 24255985A JP H0784358 B2 JPH0784358 B2 JP H0784358B2
Authority
JP
Japan
Prior art keywords
silicon
crucible
web
barrier
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60242559A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61174188A (ja
Inventor
ウイリアム・クライド・ヒギンボサム
Original Assignee
エバラ ソーラー インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エバラ ソーラー インコーポレイテッド filed Critical エバラ ソーラー インコーポレイテッド
Publication of JPS61174188A publication Critical patent/JPS61174188A/ja
Publication of JPH0784358B2 publication Critical patent/JPH0784358B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP60242559A 1984-10-29 1985-10-28 シリコン融液からのデンドライトウエブ引き上げ装置 Expired - Lifetime JPH0784358B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66606684A 1984-10-29 1984-10-29
US666066 1984-10-29

Publications (2)

Publication Number Publication Date
JPS61174188A JPS61174188A (ja) 1986-08-05
JPH0784358B2 true JPH0784358B2 (ja) 1995-09-13

Family

ID=24672685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60242559A Expired - Lifetime JPH0784358B2 (ja) 1984-10-29 1985-10-28 シリコン融液からのデンドライトウエブ引き上げ装置

Country Status (5)

Country Link
JP (1) JPH0784358B2 (da)
DE (1) DE3534807A1 (da)
FR (1) FR2572424B1 (da)
GB (1) GB2166062B (da)
IN (1) IN161924B (da)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2198966A (en) * 1986-12-09 1988-06-29 Westinghouse Electric Corp Method of growing silicon dendritic-web crystals
IN168114B (da) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4747774A (en) * 1987-02-09 1988-05-31 Westinghouse Electric Corp. Conforming crucible/susceptor system for silicon crystal growth
DE3733487C2 (de) * 1987-10-03 1997-08-14 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
JP2585123B2 (ja) * 1990-04-13 1997-02-26 東芝セラミックス株式会社 シリコン単結晶の製造方法
BR9203110A (pt) 1992-08-12 1994-03-01 Petroleo Brasileiro Sa Composicao catalitica passivadora para o craqueamento de hidrocarbonetos,alumina e processo de craqueamento catalitico fluido
JP2010208869A (ja) * 2009-03-06 2010-09-24 Sharp Corp 多結晶体または単結晶体の製造装置および製造方法
JP5923700B1 (ja) * 2015-11-30 2016-05-25 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の蓋体構造

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
JPS5373481A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Continuous preparation apparatus for sheet crystal
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
JPS58130195A (ja) * 1982-01-27 1983-08-03 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置

Also Published As

Publication number Publication date
GB8524260D0 (en) 1985-11-06
JPS61174188A (ja) 1986-08-05
GB2166062B (en) 1988-02-17
FR2572424A1 (fr) 1986-05-02
DE3534807A1 (de) 1986-06-05
FR2572424B1 (fr) 1991-01-11
IN161924B (da) 1988-02-27
GB2166062A (en) 1986-04-30

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