JPH0784358B2 - Device for lifting dendrite web from silicon melt - Google Patents
Device for lifting dendrite web from silicon meltInfo
- Publication number
- JPH0784358B2 JPH0784358B2 JP60242559A JP24255985A JPH0784358B2 JP H0784358 B2 JPH0784358 B2 JP H0784358B2 JP 60242559 A JP60242559 A JP 60242559A JP 24255985 A JP24255985 A JP 24255985A JP H0784358 B2 JPH0784358 B2 JP H0784358B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- crucible
- web
- barrier
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 本発明はシリコン融液からシリコンのデンドライトウェ
ブを引き上げる装置、特に融液を連続的に補給できるよ
うに改良した石英るつぼ溶融装置障壁に係わる。The present invention relates to an apparatus for pulling a silicon dendrite web from a silicon melt, and more particularly to a quartz crucible melter barrier modified for continuous replenishment of the melt.
誘導加熱され、るつぼを収納するサセプタ（suscepto
r）を含む溶融装置を用いたシリコンのデンドライトウ
ェブの成長工程に関連して、コストを軽減し、結晶品質
を高める手段として融液の補給が重視されている。この
ような装置ではウェブ結晶の成長と並行してるつぼの一
端または両端で粒子やペレットが添加されるが、補給材
料の溶融が起こる領域において、熱が吸収されるため、
ウェブ引き上げの起点域に著しい温度のアンバランスが
発生する。A susceptor that is induction heated and houses a crucible (suscepto
In connection with the growth process of a silicon dendrite web using a melting apparatus including r), melt replenishment is emphasized as a means for reducing costs and improving crystal quality. In such devices, particles and pellets are added at one or both ends of the crucible in parallel with the growth of web crystals, but heat is absorbed in the region where the melting of the supplementary material occurs,
A significant temperature imbalance occurs in the starting area of the web pulling.
理想的な温度条件としては、ペレットなどが補給される
領域が高温であり、るつぼの他の部分が材料補給によっ
て影響されてないことである。当業者に知られたアプロ
ーチの１つとして、るづぼ内に単数または複数の障壁を
使用することにより、デンドライトウェブ引き上げ領域
から比較的高温の融液補給領域を隔離する方式がある。
更に、断熱効果に変化を与えたり、誘導加熱コイルを移
動させることによって温度条件を調節する方法も種々試
みられている。しかし、このような温度調節は融液ゾー
ンと成長ゾーンとの間に線形の温度勾配を発生させ易
く、その結果、好ましくない結晶特性が現われる。ま
た、融液補給部から障壁開口部を通って溶融シリコンが
流入することによって成長チェンバの融液に混乱が生ず
る。The ideal temperature condition is that the area where pellets and the like are replenished is at a high temperature, and the other parts of the crucible are not affected by the material replenishment. One approach known to those skilled in the art is to use a barrier or barriers in the crucible to isolate the relatively hot melt replenishment region from the dendrite web pulling region.
Furthermore, various methods of adjusting the temperature condition by changing the heat insulating effect or moving the induction heating coil have been tried. However, such temperature control tends to generate a linear temperature gradient between the melt zone and the growth zone, resulting in unfavorable crystalline properties. Further, the molten silicon flows from the melt replenishing section through the barrier opening, causing confusion in the melt of the growth chamber.
これらの問題を解消するため、本発明は閉鎖された底
部、底部から立ち上がる側壁部材及び少なくとも一部開
口した頂部を有する細長い石英るつぼ手段と、前記るつ
ぼ手段内に横方向に配置されて前記るつぼ内にシリコン
融液補給部及びデンドライトウェブ引き上げ部を画定す
る石英障壁手段と、前記るつぼ手段の底部及び側部を加
熱してるつぼ内のシリコンを溶融させ、前記るつぼ手段
の前記ウェブ引き上げ部に溶融状態のシリコンを所定レ
ベル保持する加熱手段と、前記るつぼ手段のウェブ引き
上げ部内に保持されているシリコンの溶融面から所定の
速度でシリコンのデンドライトウェブを引き上げる手段
と、前記るつぼ手段の前記シリコン融液補給部に所定の
速度で未溶融状態のシリコンを補給するシリコン補給手
段とから成るシリコン融液からのデンドライトウェブを
引き上げる装置において、前記石英障壁手段が底縁手
段、側縁手段及び頂縁手段を含む所定の形状を有し、前
記石英障壁手段の底縁手段が前記るつぼ手段の底と密封
関係に係合し、前記石英障壁手段の側縁手段の一部が前
記るつぼ手段の側縁手段と密封関係に係合し、前記障壁
手段の頂縁手段が前記るつぼ手段に収容される溶融シリ
コンのレベルよりも上方に位置し、前記障壁の側縁手段
に切り欠きにより構成された開口部手段を設けることに
より、前記るつぼ手段の側縁の一部と共に所定寸法の開
口部を形成させ、前記開口部手段を、るつぼの底部及び
側部付近で初めて溶融するシリコンがるつぼのシリコン
補給部の加熱される底部に滞留し、滞留量が所定の深さ
に達するまで溶融シリコンがデンドライトウェブ引き上
げ部に直接流入しないようにるつぼの底部から所定距離
だけ上方に配置すると共に、るつぼ内の溶融シリコン上
に支持されている未溶融シリコンがるつぼのシリコン融
液補給部からウェブ引き上げ部へ流入しないようにるつ
ぼのシリコン融液補給部における溶融シリコンの所定の
レベルよりも所定距離だけ下方に配置し、前記障壁手段
に形成した前記開口部手段の寸法を、少なくとも充分な
流量のシリコンが前記ウェブ引き上げ部へ流入できる大
きさに設定し、前記障壁手段の前記開口部手段を前記る
つぼ手段の側部付近に配置することにより、溶融シリコ
ンが加熱されているるつぼ側壁付近でウェブ引き上げ部
に流入してシリコンがシリコンデンドライトウェブ引き
上げに適した温度に達しているようにすることを特徴と
するシリコン融液からのデンドライトウェブ引き上げ装
置を提供する。To overcome these problems, the present invention provides an elongated quartz crucible means having a closed bottom, a sidewall member rising from the bottom and an at least partially open top, and laterally disposed within the crucible means within the crucible. Quartz barrier means defining a silicon melt replenishing section and a dendrite web pulling section, and heating the bottom and sides of the crucible means to melt the silicon in the crucible, and the molten state in the web pulling section of the crucible means. Heating means for holding a predetermined level of silicon, a means for pulling a silicon dendrite web from a molten surface of silicon held in a web pulling portion of the crucible means at a predetermined speed, and the silicon melt replenishment of the crucible means. Silicon replenishing means for replenishing unmelted silicon at a predetermined speed with the silicon part In a device for lifting a dendrite web from a melt, the quartz barrier means has a predetermined shape including bottom edge means, side edge means and top edge means, the bottom edge means of the quartz barrier means being the bottom of the crucible means. In a sealing relationship with a portion of the side edge means of the quartz barrier means in a sealing relationship with a side edge means of the crucible means, the top edge means of the barrier means being received in the crucible means. An opening means, which is located above the level of the molten silicon and is formed by a notch, is provided in the side edge means of the barrier to form an opening of a predetermined size together with a part of the side edge of the crucible means. In the opening means, the silicon that melts for the first time near the bottom and sides of the crucible stays in the heated bottom of the silicon replenishing section of the crucible, and the molten silicon dendrites until the amount of stay reaches a predetermined depth. It is placed a certain distance above the bottom of the crucible so that it does not flow directly into the web pulling section, and unmelted silicon supported on the molten silicon in the crucible flows into the web pulling section from the silicon melt replenishing section of the crucible. So that the silicon melt replenishment section of the crucible is arranged below the predetermined level of molten silicon by a predetermined distance, and the opening means formed in the barrier means is dimensioned such that at least a sufficient flow rate of the silicon is applied to the web. By setting the size so that it can flow into the pulling-up portion and by arranging the opening means of the barrier means near the side portion of the crucible means, the molten silicon flows into the web pulling-up portion near the heated crucible side wall. Silicon to reach a temperature suitable for pulling a silicon dendrite web. An apparatus for pulling a dendrite web from a silicon melt is provided.
以下、添付図面に沿って好ましい実施例を説明すること
によって本発明の詳細な内容を明らかにする。Hereinafter, a detailed description of the present invention will be made clear by describing preferred embodiments with reference to the accompanying drawings.
第１図及び第２図において、20は閉鎖底部22及び該底部
から上向きに立ち延び側壁部材24を具備する細長い石英
るつぼ手段であり、るつぼの頂部は少なくとも一部が開
口している。第２図に断面図で示すように、るつぼ20内
にはシリコン融液補給部28及びそれから分離したデンド
ライトウェブ引き上げ部30を画定する石英障壁26が左右
に配置されている。別の実施例として第３図に示するつ
ぼ32では唯一の障壁26を用いることにより、１つのデン
ドライトウェブ引き上げ部30及び１つのシリコン融液補
給部28を形成する。この実施例でもるつぼ32の側壁34は
垂直である。1 and 2, 20 is an elongated quartz crucible means having a closed bottom 22 and a sidewall member 24 extending upwardly from the bottom, the top of the crucible being at least partially open. As shown in a cross-sectional view in FIG. 2, in the crucible 20, quartz barriers 26 that define a silicon melt replenishing section 28 and a dendrite web pulling section 30 separated from the silicon melt replenishing section 28 are disposed on the left and right sides. In another embodiment, the crucible 32 shown in FIG. 3 uses only one barrier 26 to form one dendrite web pulling section 30 and one silicon melt replenishing section 28. In this embodiment too, the side walls 34 of the crucible 32 are vertical.
第４−６図は従来型の石英障壁部材の立面図である。第
４図の障壁部材36はその底部に１つの切り欠き部38を具
備する。この実施例の場合、るつぼの底付近で溶融し始
めるシリコンがそのままウェブ引き上げ部へ流入し、そ
の結果、ウェブ引き上げ部に好ましくない温度勾配が発
生する。4-6 are elevation views of a conventional quartz barrier member. The barrier member 36 of FIG. 4 has one notch 38 at the bottom thereof. In the case of this embodiment, the silicon that begins to melt near the bottom of the crucible flows into the web pulling section as it is, resulting in an undesirable temperature gradient in the web pulling section.
第５図に示す他の公知実施例40は底部と頂部を結ぶ２つ
の小さい直立部42を含む４片構成の障壁である。この実
施例では、４片によって画定される開口部44の中心部を
通るかなりの流れが生起し、両外側の開口部及び中央開
口部を介するシリコンの流入によりウェブ引き上げ部に
温度勾配が発生する。また、直立部42の融接部分が早く
破損し易い。Another known embodiment 40 shown in FIG. 5 is a four piece barrier including two small uprights 42 joining the bottom and top. In this embodiment, there is a significant flow through the center of the opening 44 defined by the four pieces, and the inflow of silicon through the outer and central openings creates a temperature gradient in the web pull-up. . Further, the fusion-welded portion of the upright portion 42 is likely to be damaged quickly.
第６図にはさらに別の従来型障壁実施例46を示したが、
この実施例ではるつぼの底のやや上方に矩形の開口部48
を１箇所だけ形成してある。この実施例ではシリコンが
障壁の中央部だけしか通れず、その結果、ある程度の物
理的混乱や温度上の問題が発生し、しかも、このような
実施例の製造コストは極めて高くつく。Figure 6 shows yet another conventional barrier embodiment 46,
In this example, a rectangular opening 48 slightly above the bottom of the crucible.
Is formed in only one place. In this embodiment, the silicon can only pass through the central portion of the barrier, resulting in some physical confusion and temperature problems, yet the manufacturing cost of such an embodiment is very high.
第７図に本発明の障壁手段50を示した。この障壁手段は
底縁手段52、側縁手段54及び頂縁手段56から成る所定の
形状を備える。底縁は第１図及び第２図から明らかなよ
うに、るつぼ20の底22と密封関係に係合する。側縁54の
一部がるつぼの側壁部材24に融接され、かつ密封関係に
前記側壁部材24と係合する。障壁の頂縁56は石英るつぼ
20内に収容される溶融シリコンのレベルよりも高い位置
にある。FIG. 7 shows the barrier means 50 of the present invention. The barrier means comprises a predetermined shape consisting of bottom edge means 52, side edge means 54 and top edge means 56. The bottom edge engages in a sealing relationship with the bottom 22 of the crucible 20, as is apparent from FIGS. A portion of the side edge 54 is fused to the side wall member 24 of the crucible and engages the side wall member 24 in a sealing relationship. The top edge 56 of the barrier is a quartz crucible
Located above the level of molten silicon contained within 20.
本発明では、切り欠きにより構成される開口部手段58を
側縁54に設けることにより、第１及び第２図から明らか
なように、るつぼ20の側壁24の一部と共に所定寸法の開
口部を形成させる。開口部手段58は、るつぼ20の底部及
び側部付近で初めて溶融するシリコンがるつぼのシリコ
ン補給部28（第１図及び第２図）の加熱される底部に滞
留し、滞留量が所定の深さに達するまで溶融シリコンが
デンドライトウェブ引引き上げ部30に直接流入しないよ
うに、るつぼの底から所定の距離だけ上方に配置する。
開口部手段58はまた、るつぼ内の溶融シリコン上に支持
されている未溶融シリコンがるつぼのシリコン溶融補給
部からウェブ引き上げ部へ流入しないように、るつぼの
シリコン融液補給部における融解シリコンの所定レベル
よりも所定の距離だけ下方に配置する。According to the present invention, the opening means 58 constituted by the notch is provided on the side edge 54, so that as shown in FIGS. 1 and 2, a part of the side wall 24 of the crucible 20 and an opening of a predetermined size are formed. Let it form. In the opening means 58, the silicon that melts for the first time near the bottom and sides of the crucible 20 stays at the heated bottom of the silicon replenishing portion 28 (FIGS. 1 and 2) of the crucible, and the staying amount is a predetermined depth. It is placed a certain distance above the bottom of the crucible so that molten silicon does not flow directly into the dendrite web pull-up section 30 until this temperature is reached.
The opening means 58 also defines the molten silicon in the silicon melt replenishment section of the crucible so that the unmelted silicon supported on the molten silicon in the crucible does not flow from the silicon melt replenishment section of the crucible into the web pulling section. Place it below the level by a certain distance.
障壁に形成した開口部58の寸法は少なくとも所定流量の
シリコンをウェブ引き上げ部へ流入させることによって
ウェブ引上げ部に充分な流量の溶融シリコンを供給でき
る大きさに設定してあり、障壁開口部をるつぼ20の側壁
部24に近く配置したことで、溶融シリコンはるつぼの高
温側壁付近でウェブ引き上げ部に流入するから、シリコ
ンはシリコンデンドライトウェブ引き上げに適した温度
に達している。The size of the opening 58 formed in the barrier is set so that at least a predetermined flow rate of silicon can be supplied to the web pull-up section to supply a sufficient flow rate of molten silicon to the web pull-up section. By being placed near the sidewall 24 of the 20, the molten silicon will flow into the web pull-up near the hot sidewall of the crucible, so that the silicon has reached a temperature suitable for pulling the silicon dendrite web.
障壁は完成障壁と同じ幅、同じ高さの、ただし１板の障
壁よりは厚い矩形または台形の石英ブロックから製造す
ればよい。障壁側縁の切り欠きは石英ブロックの側面に
溝の形で機械加工すればよく、次いで鋸などでブロック
から１枚づつ障壁をスライスすればよい。The barrier may be manufactured from a rectangular or trapezoidal quartz block that is the same width and height as the finished barrier, but thicker than a one-plate barrier. The notch on the side wall of the barrier may be machined in the form of a groove on the side surface of the quartz block, and then the barrier may be sliced from the block one by one with a saw or the like.
第８図の実施例50aは障壁側縁54aが垂直であり、第３図
に示するつぼに組込まれることを除けば第７図に示した
ものとほとんど同じである。The embodiment 50a of FIG. 8 is almost the same as that shown in FIG. 7 except that the barrier side edges 54a are vertical and are incorporated into the crucible shown in FIG.
具体例として、るつぼが長さ8.0インチ（20.3cm）、幅
2.5インチ（6.4cm）で、深さ0.6ンチ（1.5cm）の溶融シ
リコンを収容する場合、各開口部58の断面積を0.059in2
（0.38cm2）に設定する。As a specific example, the crucible has a length of 8.0 inches (20.3 cm) and a width.
To accommodate 2.5 inches (6.4 cm) and 0.6 inches (1.5 cm) deep molten silicon, each opening 58 has a cross-sectional area of 0.059 in 2
Set to (0.38cm 2 ).
第９図は本発明の改良型障壁付るつぼと協働する公知の
サセプタ62を示す斜視図である。るつぼはサセプタ頂部
の開口部64に嵌入される。サセプタ62のカバー部材68を
通してシリコンのデンドライトウェブ66が引き上げられ
ている状態で、サセプタ62に組み込まれた石英るつぼを
第10図に斜視図で示した。なお、部材70は端壁断熱手
段、部材72は側壁断熱手段であり、カバーはその下に断
熱手段74を具備する。この実施例と協働させる場合に
は、本発明の改良型障壁部材を２枚用い、るつぼの両端
に融液補給部を設け、すべてのカバー部材に、補給シリ
コンを供給するための開口部76を形成する。FIG. 9 is a perspective view of a known susceptor 62 cooperating with the improved barrier crucible of the present invention. The crucible fits into the opening 64 at the top of the susceptor. FIG. 10 is a perspective view of a quartz crucible incorporated in the susceptor 62 with the silicon dendrite web 66 being pulled up through the cover member 68 of the susceptor 62. The member 70 is an end wall heat insulating means, the member 72 is a side wall heat insulating means, and the cover has a heat insulating means 74 thereunder. When used in conjunction with this embodiment, two improved barrier members of the present invention are used, melt replenishment sections are provided at both ends of the crucible, and all cover members have openings 76 for supplying makeup silicon. To form.
第11図は引き上げ操作の詳細を示す断面図であり、サセ
プタ62はコイル78にによって誘導加熱される。サセプタ
はそのトップカバー68の材料であるモリブデンで全体を
製造するのが好ましい。なお、この装置は改良型のるつ
ぼ／障壁構成を除けば、ほとんどすべて従来型の構成で
ある。FIG. 11 is a sectional view showing the details of the pulling up operation, and the susceptor 62 is induction-heated by the coil 78. The susceptor is preferably made entirely of molybdenum, which is the material of its top cover 68. It should be noted that the device is almost all of the conventional configuration except for the improved crucible / barrier configuration.
第12図は本発明装置の他の実施例を示す断面面であり、
成長チェンバ82の一部を形成するトップカバー部材80は
その頂部に、タンク84から供給管86及び開口部76を介し
てシリコン補給部28に未溶融シリコンを供給するための
開口部を具備する。シリコン・ウェブ66は切れ目のなく
引き上げられ、本発明の構成を利用して極めて長いウェ
ブを引き上げることができた。従来と同様に、成長チェ
ンバ82は大気圧よりもやや高圧の不活性雰囲気、例えば
アルゴンを含む。FIG. 12 is a sectional view showing another embodiment of the device of the present invention,
The top cover member 80, which forms a part of the growth chamber 82, has an opening at its top for supplying unmelted silicon from the tank 84 to the silicon replenishing portion 28 via the supply pipe 86 and the opening 76. The silicon web 66 was pulled up seamlessly and very long webs could be pulled up utilizing the configuration of the present invention. As before, the growth chamber 82 contains an inert atmosphere at a pressure slightly above atmospheric pressure, such as argon.
第１図は石英るつぼの平面図、第２図は第１図に矢印で
示す２−２線における断面図、第３図は垂直側壁を有
し、単一の障壁だけを組込んだ石英るつぼの他の実施例
を示す平面図、第４図は従来型の障壁の立面図、第５図
は従来型障壁の他の実施例を示す立面図、第６図は従来
型障壁のさらに他の実施例の１実施例を示す立面図、第
７図は本発明の石英障壁の一実施例を示す立面図、第８
図は本発明の石英障壁の他の実施例示す立面図、第９図
は引き上げ装置と併用されるサセプタの斜視図、第10図
は引き上げられるシリコンのデンドライトウェブを鎖線
で示す動作中のサセプタの斜視図、第11図は第10図の６
−６線における断面図、第12図は動作中の装置を未溶融
シリコン補給システムと共に示す断面図である。 50……障壁 52……底縁 54……側縁 58……切り欠き 66……デンドライトウェブFIG. 1 is a plan view of a quartz crucible, FIG. 2 is a sectional view taken along line 2-2 indicated by an arrow in FIG. 1, and FIG. 3 is a quartz crucible having a vertical side wall and incorporating only a single barrier. FIG. 4 is a plan view showing another embodiment of the conventional barrier, FIG. 4 is an elevation view showing a conventional barrier, FIG. 5 is an elevation view showing another embodiment of the conventional barrier, and FIG. FIG. 7 is an elevational view showing another embodiment of the present invention, FIG. 7 is an elevational view showing one embodiment of the quartz barrier of the present invention, and FIG.
FIG. 9 is an elevational view showing another embodiment of the quartz barrier of the present invention, FIG. 9 is a perspective view of a susceptor used together with a pulling device, and FIG. 10 is a susceptor in operation showing a silicon dendrite web to be pulled by a chain line. FIG. 11 is a perspective view of FIG.
FIG. 6 is a cross-sectional view taken along line -6, and FIG. 12 is a cross-sectional view showing the apparatus in operation together with the unmelted silicon supply system. 50 …… Barrier 52 …… Bottom edge 54 …… Side edge 58 …… Notch 66 …… Dendrite web
Claims (4)
部材及び少なくとも一部開口した頂部を有する細長い石
英るつぼ手段と、前記るつぼ手段内に横方向に配置され
て前記るつぼ内にシリコン融液補給部及びデンドライト
ウェブ引き上げ部を画定する石英障壁手段と、前記るつ
ぼ手段の底部及び側部を加熱してるつぼ内のシリコンを
溶融させ、前記るつぼ手段の前記ウェブ引き上げ部に溶
融状態のシリコンを所定レベル保持する加熱手段と、前
記るつぼ手段のウェブ引き上げ部内に保持されているシ
リコンの溶融面から所定の速度でシリコンのデンドライ
トウェブを引き上げる手段と、前記るつぼ手段の前記シ
リコン融液補給部に所定の速度で未溶融状態のシリコン
を補給するシリコン補給手段とから成るシリコン融液か
らのデンドライトウェブを引き上げる装置において、前
記石英障壁手段が底縁手段、側縁手段及び頂縁手段を含
む所定の形状を有し、前記石英障壁手段の底縁手段が前
記るつぼ手段の底と密封関係に係合し、前記石英障壁手
段の側縁手段の一部が前記るつぼ手段の側壁手段と密封
関係に係合し、前記障壁手段の頂縁手段が前記るつぼ手
段に収容される溶融シリコンのレベルよりも上方に位置
し、前記障壁の側縁手段に切り欠きにより構成された開
口部手段を設けることにより、前記るつぼ手段の側壁の
一部と共に所定寸法の開口部を形成させ、前記開口部手
段を、るつぼの底部及び側部付近で初めて溶融するシリ
コンがるつぼのシリコン補給部の加熱される底部に滞留
し、滞留量が所定の深さに達するまで溶融シリコンがデ
ンドライトウェブ引き上げ部に直接流入しないようにる
つぼの底部から所定距離だけ上方に配置すると共に、る
つぼ内の溶融シリコン上に支持されている未溶融シリコ
ンがるつぼのシリコン融液補給部からウェブ引き上げ部
へ流入しないようにるつぼのシリコン融液補給部におけ
る溶融シリコンの所定のレベルよりも所定距離だけ下方
に配置し、前記障壁手段に形成した前記開口部手段の寸
法を、少なくとも充分な流量のシリコンが前記ウェブ引
き上げ部へ流入できる大きさに設定し、前記障壁手段の
前記開口部手段を前記るつぼ手段の側部付近に配置する
ことにより、溶融シリコンが加熱されているるつぼ側壁
付近でウェブ引き上げ部に流入してシリコンがシリコン
デンドライトウェブ引き上げに適した温度に達している
ようにすることを特徴とするシリコン融液からのデンド
ライトウェブ引き上げ装置。1. An elongated quartz crucible means having a closed bottom, a sidewall member rising from the bottom, and an at least partially open top, and a silicon melt replenisher located laterally within the crucible means. And quartz barrier means defining the dendrite web pull-up and the bottom and sides of the crucible means to melt the silicon in the crucible and hold the molten silicon at a predetermined level in the web pull-up section of the crucible means. Heating means, means for pulling a silicon dendrite web from a molten surface of silicon held in the web pulling portion of the crucible means at a predetermined speed, and the silicon melt replenishing portion of the crucible means at a predetermined speed. Dendrite from silicon melt consisting of silicon replenishing means for replenishing unmelted silicon In a device for lifting a web, the quartz barrier means has a predetermined shape including bottom edge means, side edge means and top edge means, and the bottom edge means of the quartz barrier means is in sealing relationship with the bottom of the crucible means. And a portion of the side edge means of the quartz barrier means engages in a sealing relationship with the side wall means of the crucible means, the top edge means of the barrier means being above the level of molten silicon contained in the crucible means. Is also located above, and by providing an opening means constituted by a notch in the side edge means of the barrier, an opening having a predetermined size is formed together with a part of the side wall of the crucible means, and the opening means is formed. , The silicon that melts for the first time near the bottom and sides of the crucible stays in the heated bottom of the silicon replenishing part of the crucible, and the molten silicon directly reaches the dendrite web pulling part until the amount of stay reaches a predetermined depth. It is placed a predetermined distance above the bottom of the crucible so that it does not enter, and the unmelted silicon supported on the molten silicon in the crucible does not flow from the silicon melt replenishing section of the crucible into the web pulling section. At least a sufficient flow rate of silicon can flow into the web pull-up part by arranging the opening means formed in the barrier means at a predetermined distance below a predetermined level of the molten silicon in the silicon melt replenishing section. By setting the size and arranging the opening means of the barrier means near the side of the crucible means, the molten silicon flows into the web pulling portion near the side wall of the crucible where the silicon is heated and the silicon is silicon dendrite. A dend from a silicon melt characterized in that it has reached a temperature suitable for pulling the web. Light web lifting device.
１つのウェブ引き上げ部及び１つの融液補給部を画定す
ることを特徴とする特許請求の範囲第１項に記載の装
置。2. Apparatus according to claim 1, characterized in that one web pull-up and one melt replenisher are defined in the crucible means using only one quartz barrier.
央部付近に１つのウェブ引き上げ部を、また、両端部付
近に１つづつ合計２つのシリコン融液補給部を画定する
ことを特徴とする特許請求の範囲第１項に記載の装置。3. A web pull-up section is defined near the center of the crucible means using two quartz barriers, and a total of two silicon melt replenishing sections are defined, one near each end. The device according to claim 1.
で装置を囲むことを特徴とする特許請求の範囲第１項、
第２項または第３項に記載の装置。4. A device as claimed in claim 1, characterized in that the device is surrounded by a growth chamber containing an inert gas atmosphere.
The apparatus according to item 2 or 3.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66606684A | 1984-10-29 | 1984-10-29 | |
| US666066 | 1984-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61174188A JPS61174188A (en) | 1986-08-05 |
| JPH0784358B2 true JPH0784358B2 (en) | 1995-09-13 |
Family
ID=24672685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60242559A Expired - Lifetime JPH0784358B2 (en) | 1984-10-29 | 1985-10-28 | Device for lifting dendrite web from silicon melt |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH0784358B2 (en) |
| DE (1) | DE3534807A1 (en) |
| FR (1) | FR2572424B1 (en) |
| GB (1) | GB2166062B (en) |
| IN (1) | IN161924B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2198966A (en) * | 1986-12-09 | 1988-06-29 | Westinghouse Electric Corp | Method of growing silicon dendritic-web crystals |
| IN168114B (en) * | 1986-12-18 | 1991-02-09 | Westinghouse Electric Corp | |
| US4747774A (en) * | 1987-02-09 | 1988-05-31 | Westinghouse Electric Corp. | Conforming crucible/susceptor system for silicon crystal growth |
| DE3733487C2 (en) * | 1987-10-03 | 1997-08-14 | Leybold Ag | Device for pulling single crystals |
| DE3840445C2 (en) * | 1987-12-03 | 1996-08-14 | Toshiba Ceramics Co | Device and method for pulling a single crystal |
| US4919901A (en) * | 1987-12-31 | 1990-04-24 | Westinghouse Electric Corp. | Barrier design for crucibles for silicon dendritic web growth |
| EP0340941A1 (en) * | 1988-04-28 | 1989-11-08 | Nkk Corporation | Method and apparatus for manufacturing silicon single crystals |
| JPH035392A (en) * | 1989-05-30 | 1991-01-11 | Nkk Corp | Production device of silicon single crystal |
| AU632886B2 (en) * | 1990-01-25 | 1993-01-14 | Ebara Corporation | Melt replenishment system for dendritic web growth |
| JP2585123B2 (en) * | 1990-04-13 | 1997-02-26 | 東芝セラミックス株式会社 | Method for producing silicon single crystal |
| BR9203110A (en) | 1992-08-12 | 1994-03-01 | Petroleo Brasileiro Sa | PASSIVATIVE CATALYTIC COMPOSITION FOR HYDROCARBON CRACKING, ALUMINUM AND FLUID CATALYTIC CRACKING PROCESS |
| JP2010208869A (en) * | 2009-03-06 | 2010-09-24 | Sharp Corp | Apparatus and method for producing polycrystalline body or single crystalline body |
| JP5923700B1 (en) * | 2015-11-30 | 2016-05-25 | 並木精密宝石株式会社 | Large EFG method growth furnace lid structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2152801A1 (en) * | 1970-11-09 | 1972-05-10 | Little Inc A | Method and furnace for pulling crystals of uniform composition according to the Czochralski method |
| US4036595A (en) * | 1975-11-06 | 1977-07-19 | Siltec Corporation | Continuous crystal growing furnace |
| JPS5373481A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Continuous preparation apparatus for sheet crystal |
| US4389377A (en) * | 1981-07-10 | 1983-06-21 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for growing a dendritic web |
| JPS58130195A (en) * | 1982-01-27 | 1983-08-03 | Toshiba Ceramics Co Ltd | Pulling apparatus for single crystalline silicon |
-
1985
- 1985-09-25 IN IN679/CAL/85A patent/IN161924B/en unknown
- 1985-09-30 DE DE19853534807 patent/DE3534807A1/en not_active Ceased
- 1985-10-02 GB GB08524260A patent/GB2166062B/en not_active Expired
- 1985-10-09 FR FR8514957A patent/FR2572424B1/en not_active Expired - Lifetime
- 1985-10-28 JP JP60242559A patent/JPH0784358B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61174188A (en) | 1986-08-05 |
| GB2166062B (en) | 1988-02-17 |
| GB8524260D0 (en) | 1985-11-06 |
| GB2166062A (en) | 1986-04-30 |
| IN161924B (en) | 1988-02-27 |
| FR2572424A1 (en) | 1986-05-02 |
| FR2572424B1 (en) | 1991-01-11 |
| DE3534807A1 (en) | 1986-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0784358B2 (en) | Device for lifting dendrite web from silicon melt | |
| US4661200A (en) | String stabilized ribbon growth | |
| US8262795B2 (en) | Method and apparatus for the production of crystalline silicon substrates | |
| US5069742A (en) | Method and apparatus for crystal ribbon growth | |
| JPS63500937A (en) | Forefurnace for transporting molten glass | |
| US3479171A (en) | Method and apparatus to produce transverse surface flow of the float glass bath metal | |
| US5820649A (en) | Method of and apparatus for continuously producing a solid material | |
| EP0576845B1 (en) | Float melting apparatus and method employing axially movable crucibles | |
| JPH0139998B2 (en) | ||
| US11725304B2 (en) | Continuous replenishment crystal growth | |
| US4698120A (en) | Barrier for quartz crucible for drawing silicon dendritic web and method of use | |
| US4119744A (en) | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate | |
| US4721688A (en) | Method of growing crystals | |
| KR960000061B1 (en) | Lids for improved dendritic web ribbon crystal growth | |
| JP2587932B2 (en) | Silicon ribbon manufacturing method | |
| US3960511A (en) | Zone melting process | |
| KR19980064709A (en) | Method and apparatus for manufacturing plate glass | |
| JPH01215790A (en) | Crucible for growing silicon dentrite web crystal | |
| KR940022680A (en) | Method of manufacturing silicon single crystal | |
| JPS6418988A (en) | Single crystal growth unit | |
| JPS6236971B2 (en) | ||
| JPH02293390A (en) | Single crystal pull-up apparatus | |
| US6143633A (en) | In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon | |
| JPH0672078B2 (en) | Method for growing crystallized fiber compact | |
| JPS6479090A (en) | Method for stabilizing growth of semiconductor single crystal |